A method and system for measuring the concentration of elements in a semiconductor device

Abstract

The present disclosure provides a semiconductor device element concentration measurement method and system. The method comprises: constructing a spectral atlas database of the same film thickness and different specific element concentrations of a semiconductor device; obtaining a first measurement spectrum of the film thickness of a semiconductor device to be measured; constructing a lookup function to establish a linear relationship between the first measurement spectrum and the spectral atlas database, and obtaining the concentration of a specific element of the semiconductor device to be measured in the spectral atlas database. The semiconductor device element concentration measurement method and system can quickly obtain the concentration of a specific element of a semiconductor device by constructing a spectral atlas database of the same film thickness and different specific element concentrations in a film thickness measurement machine, forming a linear relationship between the film thickness spectrum of the semiconductor device to be measured and the spectral atlas database.

Description

Technical Field

[0001] This disclosure pertains to the field of film thickness measurement of elemental concentration, and particularly relates to a method and system for measuring elemental concentration in semiconductor devices. Background Technology

[0002] Currently, the instruments used to measure elemental concentration are X-ray photoelectron spectroscopy (XPS) or physical failure analysis (PFA). However, wafer fabrication processes are time-consuming, resulting in slow output. Semiconductor silicon wafer film thickness measurement instruments (THK) are primarily used to measure material thickness and the N / K ratio (where N represents the absorption coefficient and K represents the extinction coefficient). Measurements are performed by collecting light signals and calculating the optical path difference between film layers, offering a faster measurement speed.

[0003] This disclosure combines the results of XPS or PFA and establishes a database within THK. By leveraging THK's short measurement time, elemental concentration results can be obtained quickly.

[0004] Public content

[0005] To address the above problems, this disclosure proposes a method for measuring the elemental concentration of semiconductor devices, the method comprising:

[0006] Construct a database of spectra of semiconductor devices with the same film thickness but different concentrations of specific elements;

[0007] Obtain the first measurement spectrum of the film thickness of the semiconductor device under test;

[0008] A lookup function is constructed to establish a linear relationship between the first measured spectrum and the spectrum database, and the concentration of a specific element in the semiconductor device under test is obtained from the spectrum database.

[0009] For example, the specific element is an element other than Si.

[0010] For example, the specific elements include Ge, C, P, Hf, and N.

[0011] For example, the spectral database includes spectra of the absorption and extinction coefficients of semiconductor devices.

[0012] For example, the film thickness of semiconductor devices in the spectral database ranges from 0.5 nm to 100 nm.

[0013] For example, the database of spectral images of semiconductor devices with the same film thickness but different concentrations of specific elements includes:

[0014] X-ray photoelectron spectroscopy was used to analyze semiconductor devices to obtain second measured spectra of the specific element under multiple different conditions.

[0015] The second measured spectra are integrated to obtain the spectra database.

[0016] This disclosure also provides a system for measuring elemental concentration in semiconductor devices, the system comprising: a first construction unit, a film thickness determination unit, a second construction unit, and a target determination unit.

[0017] The first building unit is used to build a database of spectral images of semiconductor devices with the same film thickness but different concentrations of specific elements;

[0018] A film thickness determination unit is used to obtain a first measurement spectrum of the film thickness of the semiconductor device under test.

[0019] The second building unit is used to construct the lookup function;

[0020] The target determination unit is connected to the first construction unit, the film thickness determination unit, and the second construction unit, respectively, and is used to establish a linear relationship between the first measured spectrum and the spectrum database using the lookup function, and to obtain the concentration of a specific element of the semiconductor device under test in the spectrum database.

[0021] For example, the specific element is an element other than Si.

[0022] For example, the specific elements include Ge, C, P, Hf, and N.

[0023] For example, the spectral database includes spectra of the absorption and extinction coefficients of semiconductor devices.

[0024] For example, the film thickness of semiconductor devices in the spectral database ranges from 0.5 nm to 100 nm.

[0025] For example, the first building block includes a measurement module and an integration module.

[0026] The measurement module is used to acquire a second measurement spectrum of a specific element under multiple different conditions in the semiconductor device;

[0027] An integration module, connected to the measurement module, is used to integrate the second measured spectra to obtain the spectra database.

[0028] For example, the measurement module is an X-ray photoelectron spectroscopy analyzer.

[0029] This disclosure also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the method for measuring the element concentration of a semiconductor device as described in any of the preceding claims.

[0030] This disclosure also provides an electronic device, including: a processor and a memory.

[0031] The memory is used to store executable instructions of the processor; the processor is configured to perform the method for measuring element concentration of a semiconductor device as described above by executing the executable instructions.

[0032] The method and system for measuring element concentration in semiconductor devices disclosed herein establish a spectral database of different specific element concentrations at the same film thickness within a film thickness measuring instrument. This database establishes a linear relationship between the film thickness spectrum of the semiconductor device under test and the spectral database, enabling the rapid determination of specific element concentrations in the semiconductor device.

[0033] Other features and advantages of this disclosure will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the disclosure. The objects and other advantages of this disclosure may be realized and obtained by means of the structures pointed out in the description, claims and drawings. Attached Figure Description

[0034] To more clearly illustrate the technical solutions in the embodiments of this disclosure or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0035] Figure 1 A schematic flowchart of a method for measuring elemental concentration in a semiconductor device according to an embodiment of this disclosure is shown;

[0036] Figure 2 A schematic diagram of the semiconductor device element concentration measurement system structure is shown in an embodiment of this disclosure;

[0037] Figure 3 The light absorption spectrum of the semiconductor device in the embodiments of this disclosure is shown;

[0038] Figure 4 The extinction coefficient spectrum of the semiconductor device in the embodiments of this disclosure is shown;

[0039] Figure 5 This diagram illustrates the correlation between the SiGe thickness measured by THK and PFA in an embodiment of this disclosure.

[0040] Figure 6 A schematic diagram illustrating the correlation between the Ge element concentrations measured by THK and XPS in an embodiment of this disclosure is shown. Detailed Implementation

[0041] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. Based on the embodiments of this disclosure, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this disclosure.

[0042] Semiconductor devices include a substrate layer and film layers disposed on the surface of the substrate layer. These film layers can be stacked and distributed on the substrate surface through methods such as vacuum evaporation, magnetron sputtering, chemical vapor deposition, physical vapor deposition, or atomic layer deposition. In practical applications, the film layers of a semiconductor device can be configured as one or more layers as needed. The materials of each sub-film layer can be the same or different, and no special limitations are made here. Within each sub-film layer, the materials of two adjacent sub-film layers are different. That is, other film layers are formed on the surface of the film layers on the substrate layer. This disclosure does not limit the number or thickness of the film layers. In the embodiments of this disclosure, the composition of the substrate layer and the film layers is not specifically limited. For example, the substrate layer is a silicon substrate, and the film layers include, but are not limited to, silicon germanium (SiGe), silicon carbide (SiC), silicon phosphide (SiP), and hafnium silicon oxynitride (HfSiON).

[0043] The existing technology for measuring the elemental concentration of film layers uses XPS, an X-ray photoelectron spectroscopy method. XPS uses X-rays to irradiate a sample, exciting the inner-shell or valence electrons of atoms or molecules to emit. It enables qualitative and quantitative analysis of film layer elements. It can identify all elements except H and He based on the positions of characteristic spectral lines in the energy spectrum; it can also reflect the atomic content or relative concentration based on the intensity of photoelectron lines (the area of ​​the photoelectron peak). Electrons excited by photons are called photoelectrons. By measuring the energy of these photoelectrons, a photoelectron spectrum can be created with the kinetic energy of the photoelectrons on the x-axis and the relative intensity (pulse / s) on the y-axis, thus obtaining the composition and thickness of the analyte, including the thickness of the film layer and the elemental content within it in this embodiment.

[0044] Physical property failure analysis (PFA) primarily utilizes observation tools, such as scanning electron microscopes (SEM) and transmission electron microscopes (TEM), to perform delamination and cross-sectional analysis of semiconductor devices. The manufacturing principle of a scanning electron microscope is based on the interaction between electrons and matter. When a high-energy incident electron bombards the surface of a material, the excited region generates secondary electrons, Auger electrons, characteristic X-rays and continuous X-rays, backscattered electrons, transmitted electrons, and electromagnetic radiation. In principle, by utilizing the interaction between electrons and matter, information on various physical and chemical properties of the sample can be obtained, such as morphology, composition, crystal structure, and electronic structure. By observing the composition and thickness of the analyte using these tools, the thickness of the film layer and the elemental composition within it can be determined in this embodiment.

[0045] However, in existing technologies, X-ray photoelectron spectroscopy and physical property failure analysis (PFA) methods are slow and waste a lot of measurement time. Semiconductor silicon wafer film thickness measuring instruments are mainly used to measure the thickness, absorption coefficient, and extinction coefficient of materials. They are measured by collecting light signals and calculating the optical path difference between film layers, which is faster. Therefore, this disclosure proposes a method for measuring the element concentration of semiconductor devices. By establishing a spectral database of different specific element concentrations for the same film thickness in the film thickness measuring instrument, a linear relationship is established between the film thickness spectrum of the semiconductor device under test and the spectral database, which can quickly obtain the specific element concentration of the semiconductor device.

[0046] Figure 1 A schematic flowchart of a method for measuring elemental concentration in semiconductor devices according to an embodiment of this disclosure is shown. Figure 1 In China, the method for measuring the elemental concentration of semiconductor devices includes the following steps:

[0047] Step S1: Construct a database of spectra of semiconductor devices with the same film thickness but different concentrations of specific elements;

[0048] In this embodiment, a database of spectra of semiconductor devices with the same film thickness but different element concentrations is obtained by X-ray photoelectron spectroscopy analysis. This embodiment also provides a detailed description of the process of measuring film thickness and element concentration using X-ray photoelectron spectroscopy analysis. A high-energy electron beam bombards an anode target, causing the anode target to generate fluorescent X-rays. Specific bands of fluorescent X-rays are selected and focused onto the semiconductor device. The generated X-ray source is incident on the surface of the semiconductor device on a semiconductor device support stage. The photoelectrons generated by the X-rays are focused by a magnetic spectrometer positioned below the semiconductor device and sent to a hemispherical electron energy analyzer. The hemispherical electron energy analyzer can acquire the photoelectrons and obtain the thickness and element concentration of the thin film layer of the reference sample based on the photoelectron information.

[0049] In constructing the spectral database, this disclosure provides multiple sample semiconductor devices under different conditions. X-ray photoelectron spectroscopy analysis is performed on the film layer of each sample semiconductor device to obtain characteristic peak data samples of specific elements under multiple conditions. Statistical analysis is then performed on these samples, and the results are used as the spectral database. This disclosure includes spectra representing the absorption and extinction coefficients of film layers with different concentrations of specific elements at the same thickness under different conditions, as well as spectra representing the absorption and extinction coefficients of film layers with different thicknesses and concentrations of the same specific element.

[0050] In this embodiment of the disclosure, the X-ray photoelectron spectroscopy analysis method is used to construct a spectral database of semiconductor devices with different specific element concentrations for the same film thickness. This method is only an illustrative example. In practical applications, any method that can measure the element thickness and specific element concentration of a semiconductor device, as long as it does not deviate from the technical concept of constructing a spectral database of film thickness and specific element concentration and finding the corresponding specific element concentration according to a specific function of film thickness, is within the protection scope of this disclosure.

[0051] Step S2: Obtain the first measurement spectrum of the film thickness of the semiconductor device under test;

[0052] In this embodiment of the disclosure, a first measurement spectrum of the film thickness of the semiconductor device under test is obtained using a semiconductor silicon wafer film thickness measurement instrument (THK). This embodiment of the disclosure also provides a detailed description of the film thickness measurement method:

[0053] The semiconductor device under test (DUT) is placed in a thickness measurement apparatus. A laser is emitted from the light source, and the laser light is filtered into elliptically polarized light by a rotating polarizer. This elliptically polarized light is then irradiated onto the surface of the DUT, causing refraction and interference between the film layers. The reflected elliptically polarized light carries information about the film layers, thus obtaining a spectrum containing this information. Based on this spectrum, information such as the thickness of the DUT can be obtained. Elliptic polarization is an advanced method for measuring the nanometer-scale thickness of thin films. It features high sensitivity (detecting thickness changes of less than 0.1 nm in growing films), high accuracy (one to two orders of magnitude higher than conventional interferometry), and non-destructive operation.

[0054] The light source transmitting end of the film thickness measurement component emits a light source. This light source reaches the surface of the semiconductor device under test (DUT), where refraction and interference occur between the film layers. The reflected light carries information about the film layers, which is received by the receiving end of the film thickness measurement component and converted into a spectrum, thereby obtaining the film thickness. In this embodiment, the light source transmitting end can be a laser emitter, emitting laser light with a wavelength range of 190nm to 860nm. The method for measuring the film thickness of the semiconductor device under test in this embodiment is merely illustrative; in practical applications, any method capable of measuring semiconductor film thickness is within the scope of this disclosure.

[0055] Step S3: Construct a lookup function to establish a linear relationship between the first measured spectrum and the spectrum database, and obtain the concentration of a specific element of the semiconductor device under test from the spectrum database.

[0056] In this embodiment, the specific element is an element other than Si. The film may contain multiple elements, and the principle for determining the specific element from among these elements is: 1. The characteristic peaks of the selected element show a significant change in the composition ratio calculated by X-ray photoelectron spectroscopy before and after film growth, i.e., it possesses a good signal-to-noise ratio; 2. The selected element should be as stable as possible, avoiding significant changes due to storage time. Therefore, in this embodiment, for the composition of films such as silicon germanide (SiGe), silicon carbide (SiC), silicon phosphide (SiP), and hafnium oxysilane (HfSiON), the specific element in the SiGe layer is selected as Ge, and Ge% is measured; the specific element in the SiC layer is selected as C, and C% is measured; the specific element in the SiP layer is selected as P, and P% is measured; and the specific elements in the HfSiON layer are N and Hf, and N% and Hf% are measured.

[0057] In this embodiment, the film thickness is calculated by the difference between the spectra of the upper and lower film layers. Controlling the film thickness range can make the measured spectral noise smaller and more clearly reflect the results. In this embodiment, the film thickness of semiconductor devices in the spectral database is 0.5nm-100nm. In actual operation, there is no specific limitation on the range of film thickness.

[0058] The construction of a spectral database of semiconductor devices with the same film thickness but different specific element concentrations as described in this disclosure includes:

[0059] X-ray photoelectron spectroscopy analysis was used on semiconductor devices to obtain second measured spectra of the specific element under multiple different conditions;

[0060] The second measured spectra are integrated to obtain the spectra database.

[0061] In this embodiment of the disclosure, the measurement method of the second measurement spectrum is merely an illustrative example. Any method that can obtain the elemental thickness and specific elemental concentration of a semiconductor device by measurement, as long as it does not deviate from the technical concept of this disclosure of constructing a spectral database of film thickness and specific elemental concentration and finding the corresponding specific elemental concentration according to a specific function of film thickness, is within the protection scope of this disclosure.

[0062] This disclosure also provides a system for measuring the elemental concentration of semiconductor devices. Figure 2 A schematic diagram of the semiconductor device element concentration measurement system structure is shown in an embodiment of this disclosure. Figure 2 The system includes: a first construction unit, a film thickness determination unit, a second construction unit, and a target determination unit. The first construction unit is used to construct a spectral database of semiconductor devices with the same film thickness but different concentrations of specific elements. The film thickness determination unit is used to obtain a first measured spectral image of the film thickness of the semiconductor device under test. The second construction unit is used to construct a lookup function. The target determination unit is connected to the first construction unit, the film thickness determination unit, and the second construction unit, respectively, and is used to establish a linear relationship between the first measured spectral image and the spectral database using the lookup function, and obtain the concentration of a specific element of the semiconductor device under test in the spectral database.

[0063] In this embodiment, the first building unit includes a measurement module and an integration module. The measurement module is used to acquire second measurement spectra of a specific element under multiple different conditions of the semiconductor device. The integration module is connected to the measurement module and is used to integrate the second measurement spectra to obtain the spectral database. In this embodiment, the measurement module can be an X-ray photoelectron spectroscopy analyzer. The measurement components include an X-ray source disposed above the semiconductor device stage, capable of generating X-rays of a preset wavelength; a magnetic spectrometer disposed below the semiconductor device, used to focus the photoelectrons generated by the X-rays; and an analyzer capable of acquiring the photoelectrons and obtaining the thickness and elemental concentration of the thin film layer of the reference sample based on the photoelectron information. Specifically, in this embodiment, the X-ray source includes a high-energy electron gun, an anode target, and a monochromator. The high-energy electron gun generates a high-energy electron beam, which bombards the anode target, generating fluorescent X-rays. The monochromator filters out fluorescent X-rays of a specific wavelength and focuses them onto the semiconductor device. In this embodiment, the analyzer is a hemispherical electron energy analyzer.

[0064] In this embodiment of the disclosure, an X-ray photoelectron spectroscopy analyzer is used to construct a spectral database of semiconductor devices with different specific element concentrations for the same film thickness. This instrument is merely an illustrative example. In practical applications, any instrument that can measure the element thickness and specific element concentration of a semiconductor device, as long as it does not deviate from the technical concept of constructing a spectral database of film thickness and specific element concentration and finding the corresponding specific element concentration based on a specific function of film thickness, is within the protection scope of this disclosure.

[0065] In this embodiment of the disclosure, the film thickness determination unit includes a semiconductor silicon wafer film thickness measurement machine (THK). Elliptically polarized light is irradiated on the surface of the semiconductor device under test, and refraction and interference occur between the film layers of the semiconductor device under test. The reflected elliptically polarized light carries information about the film layers, thereby obtaining a spectrum with film layer information. In this embodiment of the disclosure, the film thickness measurement device of the semiconductor device under test is only an exemplary illustration. In actual applications, any device capable of measuring the film thickness of semiconductors is within the protection scope of this disclosure.

[0066] This disclosure also provides a specific example illustrating the measurement of the concentration of a specific element, Ge, by measuring the thickness of a SiGe layer:

[0067] The concentration of Ge element in a semiconductor device with the same film thickness is measured using an X-ray photoelectron spectroscopy (XPS). In practical applications, an XPS can be used to measure a database of spectra of different Ge element concentrations at an 8nm film thickness in a semiconductor device. This database includes spectra of absorption coefficients and extinction coefficients. To more accurately measure the film thickness and element concentration of the semiconductor device and to make the spectral data in the database more complete, this disclosure sets the range of specific element concentrations of semiconductor device samples to 2-80% when constructing the database, and sets the minimum interval for measuring similar specific element concentrations to 0.5-1%. In the embodiments of this disclosure, the range of specific element concentrations and the minimum interval for measuring similar specific element concentrations are illustrative examples. Without departing from the technical concept of constructing a spectral database of film thickness and specific element concentrations and finding the corresponding specific element concentration based on a specific function of film thickness, all are within the protection scope of this disclosure.

[0068] The film thickness of all semiconductor devices in the smallest range is summarized with the spectrum of a specific element to obtain a spectral database. In this embodiment, the spectral database is also updated. In actual application, the spectral database can be updated according to the different applications of semiconductor device film thickness and the use of specific element concentrations.

[0069] The spectral image of the SiGe layer to be measured is obtained using a semiconductor silicon wafer film thickness measurement instrument (THK). The spectral image measured by the THK instrument varies depending on the concentration of Ge element. This disclosure establishes a linear relationship between the spectral image measured by the THK instrument and a spectral image database. Specifically, the absorption and extinction spectra of the THK instrument are compared with those stored in the spectral image database. If the spectral image measured by the THK corresponds to the spectral image in the database, it indicates that the Ge element spectrum in the semiconductor device under test is recorded in the spectral image database. The THK instrument will then directly output the corresponding SiGe layer film thickness and Ge element concentration based on the corresponding spectral image recorded in the spectral image database. Figure 3 and Figure 4 The absorption coefficient spectrum and extinction coefficient spectrum of the semiconductor device in the embodiments of this disclosure are shown respectively. Figure 3 and Figure 4 In this paper, taking SiGe as an example, the absorption coefficient spectrum and extinction coefficient spectrum of different Ge contents are shown respectively. The database of this disclosure is constructed, and the percentage of Ge element concentration is obtained by comparing the measured spectrum in the spectrum database.

[0070] In this embodiment, experiments were conducted to demonstrate the correlation between the SiGe film thickness data measured by THK and PFA, respectively. Figure 5 This illustration shows a data correlation diagram of SiGe thickness measured by THK and PFA in an embodiment of this disclosure. In this disclosure, the SiGe film thickness measured by THK and the SiGe thickness measured by PFA show a correlation of 0.994, as can be seen from the scatter plot, indicating a positive linear correlation between the two. In this embodiment, experiments are also conducted to demonstrate the correlation between Ge elemental concentration measured by THK and XPS, respectively. Figure 6 This diagram illustrates the correlation between the Ge element concentration measured by THK and XPS in an embodiment of this disclosure. Figure 6 In the study, the correlation between the Ge element concentration measured by the THK instrument and the Ge element concentration measured by XPS reached 0.972, and the scatter plot shows a positive linear correlation between the two. Therefore, this disclosure constructs a database and lookup function by combining film thickness and specific element concentration, and obtains the content of specific elements by measuring the spectrum of film thickness. Compared with existing technologies that measure element concentration using XPS and PFA, the measurement results show a higher correlation, validating the measurement method of this disclosure.

[0071] In exemplary embodiments of this disclosure, a computer-readable storage medium is also provided, having stored thereon a program product capable of implementing the methods described above. In some possible embodiments, various aspects of this disclosure may also be implemented as a program product including program code that, when run on a terminal device, causes the terminal device to perform the steps described in the "Exemplary Methods" section of this specification according to various exemplary embodiments of this disclosure.

[0072] The program product may employ any combination of one or more readable media. A readable medium may be a readable signal medium or a readable storage medium. A readable storage medium may be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination thereof. More specific examples of readable storage media (a non-exhaustive list) include: an electrical connection having one or more wires, a portable disk, a hard disk, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination thereof.

[0073] Computer-readable signal media may include data signals propagated in baseband or as part of a carrier wave, carrying readable program code. Such propagated data signals may take various forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination thereof. The readable signal medium may also be any readable medium other than a readable storage medium, capable of transmitting, propagating, or transmitting a program for use by or in connection with an instruction execution system, apparatus, or device. The program code contained on the readable medium may be transmitted using any suitable medium, including but not limited to wireless, wired, optical fiber, RF, etc., or any suitable combination thereof.

[0074] In an exemplary embodiment of this disclosure, an electronic device is also provided, comprising at least one processor and at least one memory for storing executable instructions of the processor; wherein the processor is configured to perform the method steps in the exemplary embodiments described above by executing the executable instructions. In embodiments of this disclosure, the memory may be a readable medium in the form of volatile memory cells, having a set of program modules, including but not limited to: an operating system, one or more application programs, other program modules, and program data, each or some combination of these examples may include an implementation of a network environment.

[0075] In this embodiment of the disclosure, the electronic device can also communicate with one or more external devices (e.g., keyboard, pointing device, Bluetooth device, etc.), one or more devices that allow a user to interact with the electronic device, and / or any device that enables the electronic device to communicate with one or more other computing devices (e.g., router, modem, etc.). This communication can be performed via an input / output (I / O) interface. Furthermore, the electronic device can also communicate with one or more networks (e.g., local area network (LAN), wide area network (WAN), and / or public networks, such as the Internet) via a network adapter.

[0076] The method and system for measuring element concentration in semiconductor devices disclosed herein establish a spectral database of different specific element concentrations at the same film thickness within a film thickness measuring instrument. This database establishes a linear relationship between the film thickness spectrum of the semiconductor device under test and the spectral database, enabling the rapid determination of specific element concentrations in the semiconductor device.

[0077] Although the present disclosure has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present disclosure.

Claims

1. A method for measuring elemental concentration in a semiconductor device, characterized in that, The method includes: Construct a spectral database of semiconductor devices with the same film thickness but different specific element concentrations and a spectral database of semiconductor devices with the same specific element concentration but different film thicknesses. The spectral database includes absorption coefficient spectra and extinction coefficient spectra. The first measurement spectrum of the film thickness of the semiconductor device under test is obtained by using an elliptic polarization method on a semiconductor silicon wafer thickness measuring instrument. The first measurement spectrum includes the absorption coefficient spectrum and the extinction coefficient spectrum of the semiconductor device. A lookup function is constructed to establish a linear relationship between the first measured spectrum and the spectrum database, and the concentration of a specific element in the semiconductor device under test is obtained from the spectrum database.

2. The method for measuring elemental concentration in semiconductor devices according to claim 1, characterized in that, The specific element is an element other than Si.

3. The method for measuring elemental concentration in semiconductor devices according to claim 1, characterized in that, The specific element includes one or more of the elements Ge, C, P, Hf, and N.

4. The method for measuring elemental concentration in semiconductor devices according to claim 1, characterized in that, The film thickness of semiconductor devices in the spectral database ranges from 0.5 nm to 100 nm.

5. The method for measuring elemental concentration in semiconductor devices according to claim 1, characterized in that, The database of spectra of semiconductor devices with the same film thickness but different specific element concentrations and the database of spectra of the same specific element concentration but different film thicknesses include: Obtain second measured spectra of a specific element under multiple different conditions in a semiconductor device; The second measured spectra are integrated to obtain the spectra database.

6. A system for measuring elemental concentration in a semiconductor device, characterized in that, The system includes: a first construction unit, a film thickness determination unit, a second construction unit, and a target determination unit. The first construction unit constructs a spectral database of semiconductor devices with the same film thickness but different specific element concentrations and a spectral database of semiconductor devices with the same specific element concentration but different film thicknesses. The spectral database includes absorption coefficient spectra and extinction coefficient spectra. The film thickness determination unit is used to obtain a first measurement spectrum of the film thickness of the semiconductor device under test by using an elliptic polarization method on a semiconductor silicon wafer thickness measuring instrument. The first measurement spectrum includes a light absorption coefficient spectrum and an extinction coefficient spectrum of the semiconductor device. The second building unit is used to construct the lookup function; The target determination unit is connected to the first construction unit, the film thickness determination unit, and the second construction unit, respectively, and is used to establish a linear relationship between the first measured spectrum and the spectrum database using the lookup function, and to obtain the concentration of a specific element of the semiconductor device under test in the spectrum database.

7. The semiconductor device element concentration measurement system according to claim 6, characterized in that, The specific element is an element other than Si.

8. The semiconductor device element concentration measurement system according to claim 6, characterized in that, The specific element includes one or more of the elements Ge, C, P, Hf, and N.

9. The semiconductor device element concentration measurement system according to claim 6, characterized in that, The film thickness of semiconductor devices in the spectral database ranges from 0.5 nm to 100 nm.

10. The semiconductor device element concentration measurement system according to claim 6, characterized in that, The first building block includes a measurement module and an integration module. The measurement module is used to acquire a second measurement spectrum of a specific element under multiple different conditions in the semiconductor device; An integration module, connected to the measurement module, is used to integrate the second measured spectra to obtain the spectra database.

11. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, it implements the method for measuring the element concentration of a semiconductor device as described in any one of claims 1 to 5.

12. An electronic device, characterized in that, include: Processor and memory, The memory is used to store executable instructions of the processor; the processor is configured to execute the method for measuring element concentration of a semiconductor device according to any one of claims 1 to 5 by executing the executable instructions.

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