半导体器件的制作方法、存储器及其制作方法
By forming trenches in a semiconductor structure and filling them with doped material, and then using thermal diffusion to form doped regions, the difficulties of doping transistors and leakage current in small memory devices have been solved, resulting in simplified processes and improved performance.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- YANGTZE MEMORY TECH CO LTD
- Filing Date
- 2022-08-17
- Publication Date
- 2026-07-17
AI Technical Summary
As the feature size of memory decreases, the manufacturing process of transistors becomes more complex and their performance degrades. In particular, the difficulty of doping the source and drain electrodes increases, leading to leakage problems and increased process complexity.
In a semiconductor structure, trenches are formed and filled with a first doping material. The doped particles are diffused through heat treatment to form a doped region, which simplifies the doping process of the source and drain, avoids the complexity of bottom doping, and achieves uniform doping and depth control through diffusion.
This reduces transistor leakage current, simplifies the manufacturing process, improves transistor performance, and lowers manufacturing costs.
Smart Images
Figure CN115274453B_ABST