Display panel, manufacturing method thereof, and display device

Abstract

The embodiment of the present invention provides a display panel and a manufacturing method thereof and a display device. The display panel includes: a driving substrate and a light-emitting element, the driving substrate includes a first film layer, the first film layer is provided with an opening, the light-emitting element is located on the driving substrate, the light-emitting element includes a main body and an electrode, and the electrode of the light-emitting element includes a first part located in the opening, so as to improve the reflectivity problem of the display panel.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular, to a display panel and a manufacturing method thereof and a display device. Background Art

[0002] Light Emitting Diode (LED) has the advantages of fast response speed, high luminous brightness and long service life. There are many application demands, and light emitting diode display panels have always been a research and development hotspot.

[0003] The light emitting diode display panel is manufactured by transferring the light emitting diodes to a target substrate and bonding the light emitting diodes to the target substrate.

[0004] Currently, light emitting diode display panels have a problem of high reflectivity, which needs to be solved urgently. Summary of the invention

[0005] In view of this, embodiments of the present invention provide a display panel and a manufacturing method thereof and a display device to solve the problem of high reflectivity of the display panel.

[0006] An embodiment of the present invention provides a display panel, including a driving substrate and a light-emitting element, wherein the driving substrate includes a first film layer, and the first film layer is provided with an opening; the light-emitting element is located on the driving substrate, and the light-emitting element includes a main body and an electrode, and the electrode includes a first part located in the opening.

[0007] The method for manufacturing a display panel provided by an embodiment of the present invention comprises the following steps:

[0008] forming a first film layer of a driving substrate, wherein the first film layer is provided with an opening;

[0009] forming a photoresist layer, wherein the photoresist layer is located on one side of the first film layer;

[0010] forming a photoresist pattern, the photoresist pattern having a through hole, the through hole overlapping the opening;

[0011] forming an electrode layer, the electrode layer comprising a first electrode portion and a second electrode portion, the first electrode portion covers the photoresist pattern, and the second electrode portion comprises a portion located in the opening;

[0012] removing the photoresist pattern and the first electrode portion;

[0013] Providing a light-emitting element, and transferring the light-emitting element to above the driving substrate, wherein the light-emitting element includes a main body and a bonding electrode;

[0014] The light emitting element and the second electrode portion are bonded to each other so that the bonding electrode and the second electrode portion form an electrode of the light emitting element.

[0015] An embodiment of the present invention provides a display device, including the display panel provided by any embodiment of the present invention.

[0016] Compared with the prior art, the display panel and the manufacturing method thereof and the display device provided by the embodiments of the present invention have at least the following beneficial technical effects:

[0017] By at least partially disposing the electrode of the light-emitting element in the opening of the first film layer, the metal wiring electrode in the related art can be eliminated, thereby reducing the reflectivity of the display panel and improving the display effect of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 A top view of a display panel provided by an embodiment of the present invention;

[0019] Figure 2 for Figure 1 An enlarged schematic diagram of a part of the display area in FIG.

[0020] Figure 3 For along Figure 2 A schematic cross-sectional view of the midline AA';

[0021] Figure 4 for Figure 3 An enlarged schematic diagram of a part in FIG.

[0022] Figure 5 for Figure 3 Another enlarged schematic diagram of a part in FIG.

[0023] Figure 6 A flow chart of a method for manufacturing a display panel provided by an embodiment of the present invention;

[0024] Figure 7 A partial top view of a driving substrate provided by an embodiment of the present invention;

[0025] Figure 8 For along Figure 7 A schematic cross-sectional view of the midline BB';

[0026] Fig. 9 For along Figure 7 Another schematic cross-sectional view of the midline BB';

[0027] Fig.10 A local top view after a photoresist layer is formed on a driving substrate;

[0028] Fig.11 For along Fig.10 Schematic cross-section of the center line CC';

[0029] Fig.12 A schematic diagram of a structure for patterning a photoresist layer;

[0030] Fig.13 is a schematic diagram of the structure after the electrode layer is formed;

[0031] Fig.14 for Fig.13 Comparison chart of

[0032] Fig.15 is a schematic diagram of the structure after removing the photoresist pattern;

[0033] Fig.16 A schematic diagram of a transport light-emitting element;

[0034] Fig.17 It is a structural schematic diagram of the bonding process between the light emitting element and the driving substrate;

[0035] Fig.18 Another schematic diagram of a transport light-emitting element;

[0036] Fig.19 For along Figure 2 Another schematic cross-section of the midline AA';

[0037] Fig. 20 Another schematic diagram of a structure for patterning a photoresist layer;

[0038] Fig.21 is a top view of a portion of the first organic layer;

[0039] Fig. 22 For along Figure 2 Another cross-sectional schematic diagram of line AA' in FIG.

[0040] Fig.23 For along Figure 2 Another cross-sectional schematic diagram of line AA';

[0041] Fig.24 A structural schematic diagram of the process of forming a first film layer, forming an electrode layer and removing part of the electrode;

[0042] Fig.25 For along Figure 2 Another schematic cross-section of the midline AA';

[0043] Fig.26 A schematic diagram of the structure of a first film layer provided in an embodiment of the present invention;

[0044] Fig. 27 For along Figure 2 Another schematic cross-section of the midline AA';

[0045] Fig.28 and Fig.29 They are Figure 1 Another enlarged schematic diagram of a part of the display area in FIG.

[0046] Fig.30 and Fig.31 They are Fig.28 and Fig.29 An enlarged schematic diagram of area A1 in FIG.

[0047] Fig.32 and Fig.33 They are Fig.28 and Fig.29 An enlarged schematic diagram of area A2 in FIG.

[0048] Fig.34 and Fig.35 They are Fig.28 and Fig.29 An enlarged schematic diagram of area A3 in FIG.

[0049] Figure 36-Figure 39 Along Fig.28 and Fig.29 A schematic cross-sectional view of line DD' in FIG.

[0050] Fig.40 For along Fig.29 A schematic cross-sectional view of line EE' in FIG.

[0051] Figure 41-43 Along Fig.28 and Fig.29 A schematic cross-sectional view of line DD' in FIG.

[0052] Fig.44 for Fig.29 An enlarged schematic diagram of area A4 in FIG.

[0053] Fig.45 A schematic diagram of a display device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0054] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0055] Parts in this application with the same figure numbers can refer to each other in the corresponding text description parts of the relevant figures.

[0056] Figure 1 FIG. 1 is a top view of a display panel provided by an embodiment of the present invention. Figure 1As shown, the display panel 100 includes a display area AA, a plurality of pixels P are disposed in the display area AA and are regularly arranged, and the plurality of pixels P are used to display images.

[0057] Figure 2 for Figure 1 An enlarged schematic diagram of a part of the display area in FIG. Figure 3 For along Figure 2 A schematic cross-sectional view of the midline AA'. Figure 2 and Figure 3 As shown, the display panel includes a driving substrate 200 and a light emitting element 300 .

[0058] The driving substrate 200 may include a substrate 210 and a driving circuit layer 220 , and the driving circuit layer 220 is located on the substrate 210 .

[0059] The substrate 210 may be an insulating substrate. As an example, the substrate 210 may include materials such as glass, quartz, and polymer resins. Here, the polymer material may include polyethersulfone (PES), polyacrylate (PA), polyarylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyallylate, polyimide (PI), polycarbonate (PC), cellulose triacetate (CAT), cellulose acetate propionate (CAP), or a combination thereof. As another example, the substrate 210 may be a flexible substrate including polyimide (PI).

[0060] The driving circuit layer 220 may include structures such as a thin film transistor TFT, a capacitor C, and a wiring L.

[0061] As an example, the film layers of the driving circuit layer 220 may include a buffer layer 221 , an active pattern 222 , a gate insulating layer 223 , a gate 224 , an intermediate dielectric layer 225 , an interlayer dielectric layer 226 , a source electrode 227 s , a drain electrode 227 d , and a passivation layer 228 .

[0062] The buffer layer 221 may prevent impurities such as oxygen, moisture, etc. from penetrating from the substrate 210, and may planarize the substrate 210. In addition, the buffer layer 221 may control a heat transfer rate in an annealing process for forming the active pattern 222. The buffer layer 221 may include a stacked structure composed of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride.

[0063] The active pattern 222 may be arranged on the buffer layer 221, and the active pattern 222 may include a channel region 222c and a source region 222s and a drain region 222d located at opposite ends of the channel region 222c. Taking the active pattern 222 as an example including a polycrystalline silicon semiconductor, the channel region 222c includes an undoped polycrystalline silicon semiconductor, and the source region 222s and the drain region 222d may include a polycrystalline silicon semiconductor doped with impurities. The active pattern 222 may be an n-type semiconductor or a p-type semiconductor. As an example, the impurities doped in the source region 222s and the drain region 222d may be n-type impurities, for example, materials such as phosphorus (P) ions may be used as n-type impurities. As an example, the impurities doped in the source region 222s and the drain region 222d may be p-type impurities. For example, materials such as boron (B) ions may be used as p-type impurities.

[0064] The active pattern 222 may include a silicon semiconductor or an oxide semiconductor.

[0065] The silicon semiconductor may include one or more of amorphous silicon, single crystal silicon, and polycrystalline silicon, and as an example, the active pattern 222 may include low temperature polycrystalline silicon.

[0066] The oxide semiconductor may include indium (In), zinc (Zn), gallium (Ga), tin (Sn), titanium (Ti), aluminum (Al), hafnium (Hf), zirconium (Zr), magnesium (Mg), etc. The active pattern 212 may include a binary compound, a ternary compound, or a quaternary compound, for example, the active pattern 212 may include indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), gallium zinc oxide (GaZnxOy), indium zinc oxide (IZO), zinc magnesium oxide (ZnMgxOy), zinc oxide (ZnOx), gallium oxide (GaOx), tin oxide (SnOx), indium oxide (InOx), indium gallium hafnium oxide (IGHO), tin aluminum zinc oxide (TAZO), indium gallium tin oxide (IGTO), etc. These may be used alone or in combination with each other. In an exemplary embodiment of the present disclosure, the above-mentioned oxide semiconductor may be doped with lithium (Li), sodium (Na), manganese (Mn), nickel (Ni), palladium (Pd), copper (Cu), carbon (C), nitrogen (N), phosphorus (P), titanium (Ti), zirconium (Zr), vanadium (V), ruthenium (Ru), germanium (Ge), tin (Sn), fluorine (F), etc.

[0067] The gate insulating layer 223 covers the active pattern 222, and the gate insulating layer 223 may be disposed on the buffer layer 221. The gate insulating layer 223 may include a stacked structure composed of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride.

[0068] The gate 224 may be disposed on the gate insulating layer 223 and may overlap the channel region 222c of the active pattern 222, and the gate 224 and the active pattern 222 may form a thin film transistor TFT. The gate 224 may include a metal such as aluminum (Al), silver (Ag), chromium (Cr), titanium (Ti), tantalum (Ta), molybdenum (Mo), etc., an alloy thereof, a nitride thereof, a conductive metal oxide, a transparent conductive material, etc. As an example, the gate 224 may include molybdenum (Mo).

[0069] The intermediate dielectric layer 225 covers the gate 224 and may be disposed on the gate insulating layer 223. The intermediate dielectric layer 225 may include a stacked structure composed of one or more inorganic materials such as silicon oxide, silicon nitride, silicon oxynitride, etc. As an example, the intermediate dielectric layer 225 may include silicon nitride.

[0070] The interlayer dielectric layer 226 may be disposed on the intermediate dielectric layer 225 , and the interlayer dielectric layer 226 may include a stacked structure composed of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride.

[0071] The source electrode 227s may contact the source region 222s of the active pattern 222, and the drain electrode 227d may contact the drain region 222d of the active pattern 222. The source electrode 227s and the drain electrode 227d may be formed in the same process and are located in the same film layer. As an example, a first contact hole CH1 exposing a portion of the source region 222s and a second contact hole CH2 exposing a portion of the drain region 222d may be formed through the gate insulating layer 223, the intermediate dielectric layer 225, and the interlayer dielectric layer 226, respectively. The source electrode 227s may contact the upper surface of the source region 222s through the first contact hole CH1, and the drain electrode 227d may contact the upper surface of the drain region 222d through the second contact hole CH2. The source electrode 227s and the drain electrode 227d may include a metal such as aluminum (Al), silver (Ag), chromium (Cr), titanium (Ti), tantalum (Ta), molybdenum (Mo), etc., an alloy thereof, a nitride thereof, a conductive metal oxide, a transparent conductive material, etc. As an example, the source 227s and the drain 227d may include a Ti / Ai / Ti metal stack structure.

[0072] The passivation layer 228 covers the source 227s and the drain 227d, and the passivation layer 228 may be disposed on the interlayer dielectric layer 226. The passivation layer 228 may include a stacked structure composed of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride. As an example, the passivation layer 228 may include silicon nitride.

[0073] The capacitor C may include a first plate CP1 and a second plate CP2 relative to each other, and the capacitor C may be used to maintain the node potential in the driving circuit. The first plate CP1 may be located between the gate insulating layer 223 and the intermediate dielectric layer 225, and may be located in the same film layer as the gate 224, and may be formed of the same material as the gate 224. The second plate CP2 may be located between the intermediate dielectric layer 225 and the interlayer dielectric layer 226, and the second plate CP2 may include metals such as aluminum (Al), silver (Ag), chromium (Cr), titanium (Ti), tantalum (Ta), molybdenum (Mo), etc., their alloys, their nitrides, conductive metal oxides, transparent conductive materials, etc. As an example, the second plate CP2 may include molybdenum (Mo).

[0074] The trace L can be used to provide various signals. Figure 3 Taking the case where the routing L is located between the interlayer dielectric layer 226 and the passivation layer 228 as an example, the routing L can be located in the same film layer as the source 227s and the drain 227d, and can be made of the same material as the source 227s and the drain 227d. Depending on the type of signal transmitted by the routing L and the requirements, the routing L can be located in another film layer or multiple film layers, for example, the routing L and the gate 224 are located in the same film layer, or the routing L and the second electrode plate CP2 are located in the same film layer, and so on.

[0075] The driving circuit layer 220 includes a driving circuit, which is used to drive the light-emitting element 300 to emit light. As an example, the driving circuit includes a pixel circuit, which is electrically connected to the light-emitting element 300 and is used to drive the light-emitting element 300 to emit light.

[0076] Figure 4 for Figure 3 An enlarged schematic diagram of a part in the figure. Figure 5 for Figure 3 Another enlarged schematic diagram of a part in FIG. Figure 4 and Figure 5 Only some film layers in the driving substrate 200 are shown.

[0077] like Figure 3-Figure 5 As shown, the light emitting element 300 may be a light emitting diode, for example, an inorganic light emitting diode. The size of the light emitting element 300 may be less than 200 microns. As an example, the size of the light emitting element 300 may be less than 100 microns, or less than 50 microns.

[0078] The light emitting element 300 may include a body portion 310 and an electrode 320. The body portion 310 may include an N-type semiconductor layer 311, a P-type semiconductor layer 312, and an active layer 313 therebetween.

[0079] The main body 310 of the light emitting element 300 may be understood as the portion of the light emitting element 300 excluding the electrode 320 .

[0080] The material of the main body 310 of the light emitting element 300 may include, but is not limited to, compound semiconductors such as gallium nitride (GaN), aluminum indium gallium phosphide (AlInGaP), aluminum gallium arsenide (AlGaAs), or gallium arsenide phosphide (GaAsP).

[0081] The electrode 320 may include a first electrode 321 and a second electrode 322. The first electrode 321 is electrically connected to the P-type semiconductor layer 312, and the second electrode 322 is electrically connected to the N-type semiconductor layer 311. The first electrode 321 may be a positive electrode, and the second electrode 322 may be a negative electrode.

[0082] The electrode 320 may include an alloy or solid solution of a metal such as gold (Au), tin (Sn), nickel (Ni), titanium (Ti), aluminum (Al), silver (Ag), and indium (In). As an example, the electrode 320 includes a gold-indium alloy.

[0083] The first electrode 321 and the second electrode 322 may be both located on the same side of the main body 310. As an example, the first electrode 321 and the second electrode 322 are both located on the side of the N-type semiconductor layer 311 close to the P-type semiconductor layer 312. In the film structure of the display panel, the first electrode 321 and the second electrode 322 may be both located on the side of the main body 310 facing the drive substrate 200. When the light-emitting element 300 is transferred to the drive substrate 200, it is convenient to realize the electrical connection between the light-emitting element 300 and the drive substrate 200 by thermal pressing, for example, the bonding between the light-emitting element 300 and the drive substrate 200 is realized by eutectic method.

[0084] The main body 310 may further include an insulating layer 314, which covers the N-type semiconductor layer 311, the P-type semiconductor layer 312 and the active layer 313 in the main body. The insulating layer 314 is provided with through holes to expose partial areas of the N-type semiconductor layer 311 and partial areas of the P-type semiconductor layer 312, respectively. At the through holes of the insulating layer 314, the first electrode 321 is electrically connected to the P-type semiconductor layer 312, and the second electrode 322 is electrically connected to the N-type semiconductor layer 311.

[0085] The main body 310 may further include a Bragg reflection layer, which may be located on a side of the P-type semiconductor layer 312 away from the N-type semiconductor layer 311 , and improve the light extraction efficiency of the light emitting element 300 by reflecting light.

[0086] like Figure 5 As shown, the main body 310 of the light emitting element 300 may further include a transparent electrode 315, which is located between the first electrode 321 and the P-type semiconductor layer 312. The transparent electrode 315 may be made of indium tin oxide (ITO), which may be used to adjust the current density distribution in different regions of the light emitting element 300.

[0087] like Figure 5 As shown, a micro pattern may be provided on the upper surface of the light emitting element 300 , for example, a rough pattern may be provided on the upper surface of the N-type semiconductor layer 311 , which is beneficial to improving the light extraction efficiency of the light emitting element 300 .

[0088] like Figure 3 As shown, the driving substrate 200 may further include a planarization layer 230. The planarization layer 230 may be located on the driving circuit layer 220, and the planarization layer 230 may be used to form a flat surface on the driving circuit layer 220. As an example, the planarization layer 230 may be located on the passivation layer 228, and a side of the planarization layer 230 away from the passivation layer 228 has a substantially flat upper surface. The planarization layer 230 may include an organic material such as a photoresist, a polyacrylate-based resin, a polyimide-based resin, a polyamide-based resin, a siloxane-based resin, an acrylic-based resin, an epoxy-based resin, and the like.

[0089] The driving circuit layer 220 is manufactured by stacking film layers. The active pattern 222, gate 224, source 227s, drain 227d and other patterns constituting the thin film transistor TFT in the driving circuit layer 220, as well as the patterns such as the capacitor C and the trace L make the upper surface of the driving circuit layer 220 uneven. In addition, the through holes (such as the first contact hole CH1, the second contact hole CH2, etc.) penetrating the film layer will also cause the problem of uneven upper surface of the driving circuit layer 220. Among them, the upper surface of the driving circuit layer 220 can be the upper surface of the passivation layer 228. By setting the planarization layer 230, a flat surface can be provided for the components manufactured subsequently.

[0090] Continue to refer Figure 3 , the driving substrate 200 may further include a connection portion 240. The connection portion 240 is disposed on the planarization layer 230, and the connection portion 240 includes a first connection portion 241 and a second connection portion 242, the first connection portion 241 may be electrically connected to the thin film transistor TFT in the driving circuit layer 220, and the second connection portion 242 may be electrically connected to the power line. As an example, the first connection portion 241 may be electrically connected to the drain electrode 227d of the thin film transistor TFT through the contact hole CH, wherein the contact hole CH penetrates the planarization layer 230 and the passivation layer 228, and the contact hole CH exposes a portion of the drain electrode 227d of the thin film transistor TFT. The connection portion 240 may include metals such as aluminum (Al), silver (Ag), chromium (Cr), titanium (Ti), tantalum (Ta), molybdenum (Mo), etc., their alloys, their nitrides, conductive metal oxides, transparent conductive materials, etc. As an example, the connection portion 240 may include a Ti / Ai / Ti metal stack structure. The material of the connection portion 240 may be the same as that of the source electrode 227 s and the drain electrode 227 d .

[0091] In order to fully utilize the metal film layer, the metal film layer where the connecting portion 240 is located may also include other metal components, such as power lines, signal lines, electrical shielding components, light-shielding components, and the like.

[0092] like Figure 3-Figure 5 The driving substrate 200 further includes a first film layer 250 , and the first film layer 250 is provided with an opening OP.

[0093] The first film layer 250 of the driving substrate 200 is located on a side of the driving circuit layer 220 away from the substrate 210 , that is, the driving circuit layer 220 is located between the first film layer 250 and the substrate 210 .

[0094] The planarization layer 230 may be located between the first film layer 250 and the driving circuit layer 220 .

[0095] The connecting portion 240 is located between the planarization layer 230 and the first film layer 250 .

[0096] The opening OP of the first film layer 250 exposes the connecting portion 240 , and the electrode 320 of the light-emitting element 300 includes a first portion 320 a located in the opening OP. The electrode 320 of the light-emitting element 300 contacts and is electrically connected to the connecting portion 240 . Specifically, the first portion 320 a of the electrode 320 of the light-emitting element 300 contacts and is electrically connected to the connecting portion 240 .

[0097] The electrode 320 may fill the opening OP of the first film layer 250. The first portion 320a of the electrode 320 may fill the opening OP of the first film layer 250. Specifically, the lower surface 320b of the electrode 320 contacts the connection portion 240, and the side surface 320s of the first portion 320a of the electrode 320 contacts the side wall OPW of the opening OP of the first film layer 250. In this arrangement, the electrode 320 contacts the first film layer 250 in addition to the connection portion 240, thereby improving the problem that the adhesion between the electrode 320 and the metal film layer is weak, the light-emitting element is easily detached from the drive substrate 200, or the electrical contact with the drive substrate 200 is poor, and the reliability of the display panel is improved.

[0098] The upper surface of the connection portion 240 may be roughened to increase adhesion between the connection portion 240 and the first portion 320 a of the electrode 320 .

[0099] The thickness of the first film layer 250 may be adjusted to adjust the contact area between the electrode 320 and the sidewall OPW of the opening OP of the first film layer 250. For example, the thickness of the first film layer 250 may be increased to increase the contact area between the electrode 320 and the first film layer 250, thereby improving the bonding reliability between the light emitting element 300 and the driving substrate 200.

[0100] The inclination of the side wall OPW of the opening OP of the first film layer 250 can be adjusted to adjust the contact area between the electrode 320 and the side wall OPW of the opening OP of the first film layer 250. For example, along the direction from the substrate 210 to the light emitting element 300, the side wall OPW of the opening OP is inclined in a direction away from the inside of the opening, and the distance of the side wall OPW away from the center of the opening can be increased to increase the contact area between the electrode 320 and the first film layer 250, thereby improving the bonding reliability between the light emitting element 300 and the driving substrate 200.

[0101] The electrode 320 may further include a second portion 320 c located between the first portion 320 a and the main body 310 of the light emitting element 300 .

[0102] Figure 4 and Figure 5 , the first part 320a and the second part 320c of the first electrode 321 are illustrated, and the first part 320a and the second part 320c of the second electrode 322 can be divided in the same way, that is, the second electrode 322 includes a first part 320a located at the opening OP of the first film layer 250 and a second part 320c located between the first part 320a and the main body 310 of the light-emitting element 300.

[0103] like Figure 3-Figure 5 As shown, the area of ​​the second portion 320c can be greater than or equal to the area of ​​the first portion 320a. The edge of the second portion 320c that exceeds the first portion 320a can contact the upper surface of the first film layer 250, further increasing the contact area between the electrode 320 and the first film layer 250, and improving the bonding reliability between the light emitting element 300 and the driving substrate 200.

[0104] The sidewall OPW of the opening OP of the first film layer 250 and the upper surface of the first film layer 250 may be roughened to increase adhesion between the electrode 320 and the first film layer 250 .

[0105] In the related art, the electrode of the light-emitting element is directly arranged on the metal wiring electrode, one end of the metal wiring electrode is connected to the thin film transistor below through a via hole in the film layer between the metal wiring electrode and the thin film transistor, and the electrode of the light-emitting element is located at the other end of the metal wiring electrode. In order to avoid the uneven surface of the metal wiring electrode caused by the location of the via hole affecting the bonding process of the light-emitting element, a certain distance needs to be kept between the end of the metal wiring electrode located at the via hole location and the end of the electrode of the light-emitting element, so that the length of the metal wiring electrode is relatively long, and the metal wiring electrode increases the reflectivity of the display panel, affecting the display effect.

[0106] In the present application, by disposing the electrode 320 of the light emitting element 300 at the opening OP of the first film layer 250 , the metal wiring electrode is eliminated, the reflectivity of the display panel is reduced, and the display effect of the display panel is improved.

[0107] In the embodiment of the present invention, the shape of the opening OP of the first film layer 250 is a rectangle as an example. The shape of the opening OP of the first film layer 250 may also include other suitable shapes such as a circle.

[0108] like Figure 3 As shown, the first electrode 321 of the light-emitting element 300 is electrically connected to the first connection portion 241, and is electrically connected to the drain electrode 227d of the thin film transistor TFT through the first connection portion 241. The first connection portion 241 is connected to the thin film transistor TFT through the contact hole CH penetrating the planarization layer 230 and the passivation layer 228. The portion of the first connection portion 241 located in the contact hole CH generally does not have a flat surface, and the portion of the first connection portion 241 exposed by the opening OP of the first film layer 250 needs to have a relatively flat surface to facilitate the bonding of the light-emitting element 300. In the direction perpendicular to the plane where the display panel 100 is located, the contact hole CH may not overlap with the opening OP of the first film layer 250, thereby avoiding the influence of the contact hole CH on the flat portion of the first connection portion 241, and the distance D between the portion of the first connection portion 241 located in the contact hole CH and the portion of the first connection portion 241 exposed by the opening OP can be set according to requirements.

[0109] Continue to refer Figure 3 The second electrode 322 of the light emitting element 300 is electrically connected to the second connection portion 242 , and can be connected to a power line through the second connection portion 242 .

[0110] Figure 6 The present invention provides a flow chart of a method for manufacturing a display panel according to an embodiment of the present invention.

[0111] Combination Figure 6-Figure 17 The manufacturing method of the display panel provided in the embodiment of the present application is described as follows:

[0112] S101 : forming a first film layer 250 of the driving substrate 200 , and setting an opening OP in the first film layer 250 .

[0113] Figure 7 A partial top view of a driving substrate provided in an embodiment of the present invention, Figure 8 For along Figure 7 A schematic cross-section of the midline BB'. Fig. 9 For along Figure 7 Another cross-sectional diagram of the midline BB'. Figure 8 and Fig. 9Two examples of drive substrates are shown respectively. The subsequent process steps are as follows Fig. 9 The driving substrate of the example is used to illustrate that the subsequent process steps are also applicable to Figure 8 The drive substrate shown.

[0114] like Figure 7 and Figure 8 As shown, the driving substrate 200 may include a substrate 210 , a circuit layer 260 , an insulating layer 270 , a connecting portion 240 and a first film layer 250 .

[0115] The circuit layer 260 may be located on the substrate 210, and the circuit layer 260 may include a plurality of signal lines for transmitting a driving signal. Figure 8 For example, the driving substrate 200 includes a circuit layer 260. In other implementations, the circuit layer 250 may include multiple layers to meet the number and position setting requirements of the signal lines.

[0116] The insulating layer 270 may cover the wiring layer 260 .

[0117] The connection portion 240 may be disposed on the insulating layer 270 , and may be electrically connected to the circuit layer 260 through a contact hole CH disposed in the insulating layer 270 .

[0118] The first film layer 250 is located on the upper side of the driving substrate 200 . The first film layer 250 is provided with an opening OP. The opening OP exposes the connecting portion 240 . The opening OP may be used to receive a portion of an electrode layer to be formed subsequently.

[0119] like Figure 7 and Fig. 9 As shown, the driving substrate 200 may include a substrate 210 , a driving circuit layer 220 , a planarization layer 230 and a first film layer 250 . Fig. 9 The driving substrate 200 in the embodiment can refer to Figure 3 The driving substrate 200 and related descriptions thereof are described in detail, and the same parts are not repeated here.

[0120] The opening OP of the first film layer 250 may be used to receive a portion of an electrode layer formed subsequently.

[0121] It should be noted that in order to more clearly illustrate the structures closely related to each step, some figure marks are omitted in the relevant drawings of the subsequent process steps. The omitted figure marks can be referred to other relevant drawings in this application.

[0122] S102 : forming a photoresist layer 400 , wherein the photoresist layer 400 is located on one side of the first film layer 250 .

[0123] Fig.10 This is a partial top view after a photoresist layer is formed on a driving substrate. Fig.11 For along Fig.10 Schematic cross-section of the center line CC'.

[0124] like Fig.10 and Fig.11 As shown, the photoresist layer 400 may be disposed entirely on the upper surface of the driving substrate 200 . Specifically, the photoresist layer 400 is disposed on the first film layer 250 , contacts the first film layer 250 , and fills the opening OP of the first film layer 250 .

[0125] S103 : forming a photoresist pattern 410 , wherein the photoresist pattern 410 has a through hole 420 , and the through hole 420 overlaps with the opening OP.

[0126] Fig.12 A schematic diagram of a structure for patterning a photoresist layer.

[0127] like Fig.12 As shown, the photoresist layer 400 may be patterned by exposure and development to form a photoresist pattern 410 .

[0128] Specifically, a mask plate Mask can be placed above the photoresist layer 400, and light can be transmitted through the mask plate Mask to selectively expose the photoresist layer 400, so that the exposed area of ​​the photoresist layer 400 becomes a soluble substance, or the exposed area of ​​the photoresist layer 400 becomes an insoluble substance, and the soluble substance in the photoresist layer 400 is removed by development to form a photoresist pattern 410.

[0129] The material of the photoresist layer 400 may be a negative photoresist. The exposed area of ​​the photoresist layer 400 becomes an insoluble substance and is left during the development process, while the non-exposed area of ​​the photoresist layer 400 is removed.

[0130] Fig.12 The material of the photoresist layer 400 is illustrated as a negative photoresist. Fig.12 As shown, the mask Mask includes a light-transmitting area TA and a light-shielding area SA, and the light-shielding area SA is directly opposite to the opening OP of the first film layer 250, and is used to shield the opening OP area from light. The area of ​​the photoresist layer 400 directly opposite to the light-transmitting area TA of the mask Mask undergoes a photochemical reaction under light and becomes an insoluble substance. During the development process, the portion of the photoresist layer 400 overlapping with the opening is removed to form a photoresist pattern 410.

[0131] For the photoresist layer 400 using negative photoresist, during the exposure process, the exposure amounts at different thickness positions along its thickness direction are different. The exposure amount is smaller at the position farther away from the exposure source. During development, the positions with insufficient exposure amounts are also easily removed, thereby forming inclined side walls in the photoresist pattern 410.

[0132] The photoresist pattern 410 has a through hole 420 that overlaps the opening. The photoresist pattern 410 includes a bottom surface 410b facing the first film layer 250 and a sidewall 410s located at the through hole 420. The angle θ between the bottom surface 410b and the sidewall 410s of the photoresist pattern 410 is an obtuse angle.

[0133] like Fig.12 As shown, the light shielding area SA of the mask Mask may have the same size as the area where the opening OP is located. In other embodiments, the light shielding area SA of the mask Mask may be larger than the area where the opening OP is located, and the light shielding area SA overlaps with the opening OP.

[0134] S104 : forming an electrode layer 500 , the electrode layer 500 including a first electrode portion 510 and a second electrode portion 520 , the first electrode portion 510 covers the photoresist pattern 410 , and the second electrode portion 520 includes a portion located in the opening OP.

[0135] Fig.13 Schematic diagram of the structure after the electrode layer is formed. Fig.13 As shown, an electrode layer 500 can be formed above the photoresist pattern 410 by evaporation or physical vapor deposition, and the electrode layer 500 includes a first electrode portion 510 and a second electrode portion 520, wherein the first electrode portion 510 covers the photoresist pattern 410 (i.e., the portion of the photoresist layer 400 retained during development), and the second electrode portion 520 includes a portion located within the opening OP of the first film layer 250.

[0136] Since the photoresist pattern 410 has a through hole 420, and the through hole 420 overlaps with the opening OP of the first film layer 250, when the electrode layer 500 is formed by evaporation or physical vapor deposition, the electrode layer 500 includes not only a portion located on the photoresist pattern 410, but also a portion located in the opening OP of the first film layer 250. In addition, by using a negative photoresist for the photoresist layer 400, a side wall 410s inclined toward the center of the through hole 420 can be formed at the through hole 420 of the photoresist pattern 410, so that the second electrode portion 520 of the electrode layer 500 is easily disconnected from the first electrode portion 510 at the through hole 420.

[0137] Fig.14 for Fig.13 .

[0138] like Fig.14As shown, the metal connecting electrode MCE is located on the flat layer PLN, the photoresist pattern 410 is located on the flat layer PLN, and the through hole 420 of the photoresist pattern 410 exposes at least a partial area of ​​the metal connecting electrode MCE, and the electrode layer 500' includes a first electrode portion 510' located on the upper surface of the photoresist pattern 410 and a second electrode portion 520' located in the through hole 420. In order to ensure that the first electrode portion 510' and the second electrode portion 520' are disconnected at the through hole 420, it is necessary to set the thickness T1' of the photoresist pattern to be greater than the thickness of the electrode layer 500'. Since the second electrode portion 520' needs to be melted and pressed with the bonding electrode on the light-emitting element 300 in the subsequent bonding process between the light-emitting element 300 and the driving substrate 200, there are requirements on the thickness of the second electrode portion 520'. The thickness of the second electrode portion 520' cannot be too small. Therefore, the thickness T1' of the photoresist pattern cannot be too small. There are certain requirements for the process and equipment for forming the photoresist layer and the process and equipment for patterning the photoresist layer, which increases the process difficulty.

[0139] In this application, if Fig.13 As shown, the thickness of the electrode layer 500 is T2, and the thickness of the second electrode portion 520 of the electrode layer 500 is also substantially T2, and the second electrode portion 520 also includes a portion located in the opening OP of the first film layer 250. In this solution, the first film layer 250 bears part of the thickness of the electrode layer 500, reducing the requirement for the thickness T1 of the photoresist layer 400. Specifically, the depth of the opening OP of the first film layer 250 digests part of the thickness of the second electrode portion 520, so that the thickness of the portion of the second electrode portion 520 located in the through hole 420 is less than the thickness T2 of the electrode layer 500, thereby reducing the requirement for the depth of the through hole 420 of the photoresist pattern 410, that is, reducing the requirement for the thickness T1 of the photoresist pattern 420, which can reduce the thickness of the photoresist layer, reduce the process difficulty of the photoresist process, and at the same time be compatible with the process equipment for manufacturing other film layers in the display panel.

[0140] The electrode layer 500 may include a single metal layer or a multi-layer metal layer stack structure such as gold (Au), tin (Sn), nickel (Ni), titanium (Ti), aluminum (Al), silver (Ag) and indium (In). As an example, the electrode layer 500 is a gold (Au) film layer.

[0141] Fig.12 and Fig.13The light shielding area SA of the mask is shown to have the same size as the opening OP of the first film layer 250. In another embodiment, the area of ​​the light shielding area SA can be larger than the area of ​​the opening OP of the first film layer 250, so that the area of ​​the through hole 420 of the formed photoresist pattern 410 can be larger than the area of ​​the opening OP of the first film layer 250, and the second electrode portion 520 of the electrode layer 500 formed subsequently includes not only a portion filling the opening OP but also a portion covering the upper surface of the first film layer 250. When the bonding electrode 330 of the light emitting element 300 is bonded to the second electrode portion 520, the contact area between the bonding electrode 330 and the second electrode portion 520 can be increased, thereby improving the alignment accuracy and bonding reliability.

[0142] S105 : removing the photoresist pattern 410 and the first electrode portion 510 .

[0143] Fig.15 Schematic diagram of the structure after removing the photoresist pattern.

[0144] like Fig.15 As shown, the second electrode portion 520 includes a portion located at the opening OP of the first film layer 250 . The thickness of the second electrode portion 520 may be greater than the depth of the opening OP. That is, the second electrode portion 520 may also include a portion protruding from the upper surface of the first film layer 250 .

[0145] In removing Fig.13 After the photoresist pattern 410 in the structure shown in the figure is formed together with the first electrode portion 510 located on the photoresist pattern 410, a Fig.15 The structure shown.

[0146] The photoresist pattern 410 and the first electrode portion 510 may be removed by using a stripping solution. The sidewall 410s of the photoresist pattern 410 is inclined so that there is a gap between the sidewall 410s and the second electrode portion 520, which is conducive to the inflow of the stripping solution (such as Fig.13 As shown by the arrow between the side wall 410s and the second electrode portion 520 in FIG. 1 , the photoresist pattern 410 and the first electrode portion 510 thereon are removed smoothly.

[0147] S106 : providing a light emitting element 300 a , and transferring the light emitting element 300 a to above the driving substrate 200 , wherein the light emitting element 300 a includes a main body 310 and a bonding electrode 330 .

[0148] Fig.16 A schematic diagram of transporting light-emitting elements.

[0149] like Fig.16As shown, the transfer device 600 transfers the light emitting element 300a to the top of the driving substrate 200. The light emitting element 300a can be formed by epitaxial growth and patterning on the source substrate, and placed on the driving substrate 200 by transfer.

[0150] The light emitting element 300a includes a main body 310 and a bonding electrode 330. The structure of the main body 310 can be referred to Figure 4 and Figure 5 And its related description, please refer to Fig.16 , the same parts will not be repeated.

[0151] The bonding electrode 330 may include a first bonding electrode 331 and a second bonding electrode 332 . The first bonding electrode 331 is electrically connected to the P-type semiconductor layer 312 , and the second bonding electrode 332 is electrically connected to the N-type semiconductor layer 311 .

[0152] The bonding electrode 330 may include a single metal layer such as gold (Au), indium (In), or a multi-layer metal layer stacking structure. As an example, the bonding electrode 330 includes an indium (In) film layer.

[0153] The transfer device 600 may include a transfer head, a transfer substrate, etc. As an example, the transfer device 600 may be a stamp, which picks up a plurality of light emitting elements 300a through van der Waals force and releases the light emitting elements 300 at specific positions to complete the transfer of the light emitting elements 300a.

[0154] S107 : bonding the light emitting element 300 a and the second electrode portion 520 , so that the bonding electrode 330 and the second electrode portion 520 form the electrode 320 of the light emitting element 300 .

[0155] Fig.17 It is a structural schematic diagram of the bonding process between the light-emitting element and the driving substrate.

[0156] like Fig.17 As shown, the bonding electrode 330 of the light emitting element 300a contacts the second electrode portion 520 located on the driving substrate 200, and a eutectic reaction occurs at a certain temperature, so that the bonding electrode 330 and the second electrode portion 520 are crystallized into a crystal mixture (eutectic), that is, a Fig.17 The electrode 320 (first electrode 321 and second electrode 322) of the light emitting element 300 in the embodiment of the present invention is shown in FIG. As an example, the second electrode portion 520 includes gold (Au), the bonding electrode 330 includes indium (In), and the electrode 320 of the light emitting element 300 formed by the eutectic reaction between the second electrode portion 520 and the bonding electrode 330 is a gold-indium alloy.

[0157] During the bonding process, the second electrode portion 520 melts and is squeezed, and is prone to flow. By arranging it in the opening OP, the range of its flow to the surrounding is reduced, thereby avoiding the contact and short circuit between the formed first electrode 321 and the second electrode 322.

[0158] Fig.18 Another schematic diagram of transporting light-emitting elements.

[0159] Combination Figure 6 and Fig.18 Another implementation of a method for manufacturing a display panel provided in an embodiment of the present invention is described.

[0160] Steps S101-S103 and S105 may be the same as described above, and the process of S104, S106 and step S107 is described as follows:

[0161] S104 : forming an electrode layer 500 , the electrode layer 500 including a first electrode portion 510 and a second electrode portion 520 , the first electrode portion 510 covers the photoresist pattern 410 , and the second electrode portion 520 includes a portion located in the opening OP.

[0162] In this step, the electrode layer 500 includes a stacked first metal and a second metal, for example, the first metal is gold (Au) and the second metal is indium (In).

[0163] S106 : providing a light emitting element 300 b , and transferring the light emitting element 300 b to above the driving substrate 200 , wherein the light emitting element 300 b includes a main body 310 .

[0164] S107 : bonding the light emitting element 300 b and the second electrode portion 520 , so that the second electrode portion 520 forms the electrode 320 of the light emitting element 300 .

[0165] In this step, the stacked first metal and the second metal in the second electrode portion 520 undergo a eutectic reaction to form a gold-indium alloy, which serves as the electrode 320 of the light-emitting element 300. At the same time, during the bonding process, the main body 310 of the light-emitting element 300b also contacts the second electrode portion 520 and forms a fixed electrical connection.

[0166] like Figure 3 As shown, the first film layer 250 may include a first organic layer 251, and the first organic layer 251 includes photoresist, polyacrylate-based resin, polyimide-based resin, polyamide-based resin, siloxane-based resin, acrylic-based resin, epoxy-based resin, and the like.

[0167] based on Figure 6 Step S104 in Figure 13-14As described in the related text, the first film layer 250 includes the first organic layer 251, which can provide an opening OP with a certain depth, reduce the thickness requirement of the photoresist layer 400, and thus reduce the process difficulty. At the same time, the first organic layer 251 can continue to provide a flat surface above the connecting portion 240, which facilitates the smooth eutectic process between the second electrode portion 520 and the bonding electrode 330, and improves the reliability of electrode bonding. Based on this, the first organic layer 251 can be used as a second planarization layer.

[0168] Fig.19 For along Figure 2 Another schematic cross-section of the center line AA'.

[0169] like Fig.19 As shown, the first organic layer 251 is provided with a first opening OP1, and the opening OP of the first film layer 250 includes the first opening OP1. Along the direction from the first film layer 250 to the light emitting element 300 (as shown by the arrow in the figure), the side wall OPW1 of the first opening OP1 is inclined toward the inside of the first opening OP1, that is, the area of ​​the top surface of the first opening OP1 (close to the main body 310 of the light emitting element 300) is smaller than the area of ​​the bottom surface of the first opening OP1 (close to the connecting portion 240).

[0170] The electrode 320 of the light-emitting element 300 includes a first portion 320a filling the first opening OP1. The inclined setting of the side wall OPW1 of the first opening OP1 improves the ability of the driving substrate 200 to fix the light-emitting element 300 and reduces the probability of the light-emitting element 300 falling off the driving substrate 200.

[0171] Fig.19 in Figure 3 The parts with the same figure marks can refer to the aforementioned content and will not be repeated here.

[0172] Fig. 20 Another structural schematic diagram for patterning a photoresist layer.

[0173] based on Fig.19 The structure of the first organic layer 251 is Figure 6 The process of step S103 in Fig. 20 For illustration.

[0174] In the method for manufacturing a display panel, step S101: forming a first film layer 250 of a driving substrate 200 includes:

[0175] The first organic layer 251 is formed, and the first organic layer 251 provides a first opening OP1.

[0176] The structure of the first organic layer 251 can be referred to Figure 3 , Fig.19 and Fig. 20 .

[0177] The first organic layer 251 may include a negative photoresist.

[0178] The structure of the first organic layer 251 formed by using a negative photoresist can be referred to Fig.19 and Fig. 20 .

[0179] like Fig.19 As shown, the first organic layer is made of negative photoresist, so that the sidewall OPW1 of the formed first opening OP1 is inclined toward the inside of the first opening OP1.

[0180] like Fig. 20 As shown, in the case where both the first organic layer 251 and the photoresist layer 400 use negative photoresist, a mask having the same shading area pattern (such as the same mask) can be used to form the first organic layer 251 and the photoresist pattern 410, saving the mask production cost.

[0181] The first organic layer 251 includes a light absorbing material. The first organic layer 251 can be used for light shielding, and by absorbing ambient light, it plays a role in reducing the reflectivity of the display panel. For example, the first organic layer 251 includes a black pigment. As an example, the first organic layer 251 can be a black photoresist.

[0182] Fig.21 It is a top view of a part of the first organic layer. Fig. 22 For along Figure 2 Another schematic cross-sectional view of line AA' in FIG. Fig. 22 and Figure 3 The difference between Figure 3 The first organic layer 251 in the embodiment can transmit light, and Fig. 22 The first organic layer 252 includes a light absorbing material, Fig. 22 For other structures in Figure 3 And the related text descriptions will not be repeated here.

[0183] like Fig.21 and Fig. 22As shown, except for the position where the first opening OP1 is set, the other parts of the first organic layer 251 can block light. On the one hand, the first organic layer 251 can greatly reduce the problem of high reflectivity of the display panel caused by the metal components in the driving circuit layer 220; on the other hand, the first organic layer can also reduce the impact of external ambient light on the performance of the components in the driving circuit layer 220, for example, avoiding the problem of external ambient light being incident on the thin film transistor and causing light leakage in the thin film transistor; on another hand, the first organic layer 251 can absorb the light emitted downward by the light-emitting element 300 to avoid it being reflected and affecting the display effect.

[0184] In an embodiment where the first organic layer 251 is a negative photoresist, the first organic layer 251 may include a light absorbing material. As an example, Fig.19 The first organic layer 251 in the embodiment may be light-transmissive, or, Fig.19 The first organic layer 251 in the embodiment may include a light absorbing material to block light.

[0185] The first film layer 250 of the display panel may further include a protective layer 252 .

[0186] Fig.23 For along Figure 2 Another schematic cross-sectional view of line AA'. Fig.23 and Fig. 22 The difference between Fig. 22 The first film layer 250 includes a first organic layer 251, and Fig.23 The first film layer 250 includes a first organic layer 251 and a protective layer which are stacked. Fig.23 For other structures in Figure 3 , Fig. 22 And the related text descriptions will not be repeated here.

[0187] like Fig.23 As shown, the first film layer 250 in the display panel includes a first organic layer 251 and a protective layer 252 . The protective layer 252 covers the first organic layer 251 and is in contact with the first organic layer 251 .

[0188] The first organic layer 251 is provided with a first opening OP1, and the protective layer 252 is provided with a second opening OP2, and the first opening OP1 overlaps with the second opening OP2. The opening OP of the first film layer 252 may be composed of the first opening OP1 and the second opening OP2.

[0189] The electrode 320 includes portions disposed within the first opening OP1 and the second opening OP2 .

[0190] The protective layer 252 may cover the upper surface of the first organic layer 251 and the sidewalls of the first opening OP of the first organic layer 251 , that is, the protective layer 252 wraps the exposed surface of the first organic layer.

[0191] The portion of the electrode 320 of the light emitting element 300 located in the opening OP is in contact with the protective layer 252 .

[0192] For the embodiment in which the first film layer 250 includes a stacked first organic layer 251 and a protective layer 252, Figure 6 The process of steps S101, S104 and S105 in Fig.24 For illustration.

[0193] Fig.24 It is a structural schematic diagram of the process of forming a first film layer, forming an electrode layer and removing part of the electrode.

[0194] Combination Figure 6 and Fig.24 , steps S101, S102, S104 and S105 in the method for manufacturing a display panel are described as follows:

[0195] Step S101: forming a first film layer 250 of the driving substrate 200, including:

[0196] A first organic layer 251 is formed, and a first opening OP1 is provided in the first organic layer 251;

[0197] A protective layer 252 is formed to cover the first organic layer 251 . The protective layer 252 defines a second opening OP2 , and the second opening OP2 overlaps the first opening OP1 .

[0198] Step S102: forming a photoresist layer 400, the photoresist layer 400 being located on one side of the first film layer 250, including:

[0199] The photoresist layer 400 is located on a side of the protection layer 252 away from the first organic layer 251 .

[0200] Step S104 : forming an electrode layer 500 , wherein the electrode layer 500 includes a first electrode portion 510 and a second electrode portion 520 . The first electrode portion 510 covers the photoresist pattern 410 , and the second electrode portion 520 includes a portion located in the opening OP.

[0201] Step S105 : removing the photoresist pattern 410 and the first electrode portion 510 .

[0202] The photoresist pattern 410 and the first electrode portion 510 are removed by using a stripping solution. In the process of forming the structure of step S105 from the structure of step S104, the stripping solution may also flow into the gap between the sidewall 410s of the photoresist pattern 410 and the second electrode portion 520. Fig.24 As shown by the arrow in the structure diagram of step S104 in .

[0203] In a structure not including the protective layer 252 (e.g. Fig. 22 As shown in FIG. 2 , the first organic layer 251 is exposed at the gap, and the stripping solution contacts the first organic layer 251 at the gap, causing the black photoresist constituting the first organic layer to fade and become ineffective.

[0204] A protective layer 252 is provided to cover the exposed surface of the first organic layer 251 and isolate the first organic layer 251 from the stripping solution, thereby preventing the stripping solution from contacting and corroding the first organic layer 251 when removing the photoresist pattern 410, thereby preventing the first organic layer 251 from fading and failing.

[0205] The protective layer 252 can be made of a material that is resistant to the effects of stripping liquid.

[0206] The protective layer 252 may include an inorganic layer. The portion of the electrode 320 located in the opening OP contacts the inorganic layer 252, and the electrode 320 and the inorganic layer 252 have good adhesion, which can prevent the electrode 320 from falling off. The protective layer 252 may include a stacked structure composed of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride.

[0207] Fig.25 For along Figure 2 Another schematic cross-section of the center line AA'.

[0208] like Fig.25 As shown, the display panel further includes an encapsulation layer 700, and the encapsulation layer 700 is used to encapsulate the light emitting element 300. The encapsulation layer 700 may include an encapsulation glue 710, and the encapsulation glue 710 may cover the driving substrate 200 and the light emitting element 300.

[0209] In an embodiment in which the first organic layer 251 in the first film layer 250 includes a light-absorbing material, the first organic layer 251 is used to reduce the reflectivity of the display panel. After the protective layer 252 is added to the first film layer 250, a new interface between the protective layer 252 and the encapsulation glue 710 is added to the display panel. The newly added interface easily leads to the problem of increased reflectivity, thereby hindering the realization of the purpose of reducing the reflectivity of the display panel by adopting the first organic layer 251.

[0210] Based on this, the protection layer 252 may include a silicon oxide layer.

[0211] The refractive index of the silicon oxide layer is similar to the refractive index of the material of the packaging layer 700. For example, the refractive index of the silicon oxide layer is similar to the refractive index of the packaging glue 710, which reduces the interface reflection between the protective layer 252 and the packaging glue 710 and can improve the problem of increased reflectivity caused by the large refractive index difference.

[0212] Fig.26 A schematic structural diagram of the first film layer provided in an embodiment of the present invention.

[0213] like Fig.26 As shown, the first film layer 250 includes a first organic layer 251 and a protective layer 252 . The protective layer 252 includes a stacked silicon nitride layer 252 a and a silicon oxide layer 252 b . The silicon nitride layer 252 a is located between the silicon oxide layer 252 b and the first organic layer 251 .

[0214] The silicon oxide layer is directly deposited on the first organic layer 251, and the silicon oxide layer is prone to cracking and falling off. A silicon nitride layer 252a is added between the silicon oxide layer 252b and the first organic layer 251, and the silicon nitride layer 252a can play a transitional role between the two, improve the film bonding performance of the protective layer 252 and the first organic layer 251, and prevent the film separation.

[0215] like Fig.26 As shown, the thickness T3 of the silicon nitride layer 252a is less than the thickness T4 of the silicon oxide layer 252b. Specifically, T3≤40nm, 200nm≤T4≤400nm. As an example, T3=30nm, T4=200nm, or T3=30nm, T4=400nm. By setting the thickness T3 of the silicon nitride layer 252a to be less than the thickness T4 of the silicon oxide layer 252b, the reflectivity problem caused by the interface between the silicon nitride layer 252a and the silicon oxide layer 252b can be reduced.

[0216] Fig. 27 For along Figure 2 Another schematic cross-section of the center line AA'.

[0217] like Fig. 27 As shown, the first film layer 250 includes a first organic layer 251 and a protective layer 252 . The first organic layer 251 is provided with a first opening OP1 , and the protective layer 252 is provided with a second opening OP2 , wherein the second opening OP2 is larger than the first opening OP1 .

[0218] When the bonding electrode 330 of the light emitting element 300a is bonded to the second electrode portion 520, the bonding electrode 330 and the second electrode portion 520 are melted and compressed, which easily causes the melted portion to flow and diffuse to the surroundings. By providing the protective layer 252, and the second opening OP2 of the protective layer 252 is larger than the first opening OP1 of the first organic layer 251, more accommodation space can be provided for the second electrode portion 520 and the molten portion of the bonding electrode 330, thereby preventing a short circuit between the formed electrodes 320. In addition, after the bonding electrode 330 and the second electrode portion 520 form a eutectic (such as the electrode 320), the eutectic contacts both the side wall of the first organic layer 251 and the protective layer 252, thereby improving the bonding force between the electrode 320 and the first film layer 250, thereby preventing the light emitting element 300 from falling off.

[0219] Fig. 27 In the example, the first organic layer 251 in the first film layer 250 is a light-transmitting film layer. In another embodiment, Fig. 27 The first organic layer 251 in the embodiment is replaced by a film layer containing a light absorbing material. The film layer containing a light absorbing material can refer to Fig. 22 , Fig.23 , Fig.25 In another embodiment, the first organic layer 251 may be Fig. 27 The first organic layer 251 in the embodiment is replaced by a film layer containing a negative photoresist. The film layer containing a negative photoresist can refer to Fig.19 The first organic layer 251 in the embodiment of the present invention.

[0220] Regarding the size relationship between the first opening OP1 of the first organic layer 251 and the second opening OP2 of the protective layer 252 , the second opening OP2 may be smaller than the first opening OP1 , which can improve the problem of the light emitting element 300 being easily dropped off.

[0221] Fig.28 and Fig.29 They are Figure 1 Another enlarged schematic diagram of a part of the display area in FIG. Fig.30 and Fig.31 They are Fig.28 and Fig.29 An enlarged schematic diagram of area A1 in FIG. Fig.32 and Fig.33 They are Fig.28 and Fig.29 An enlarged schematic diagram of area A2 in FIG. Fig.34 and Fig.35 They are Fig.28 and Fig.29 An enlarged schematic diagram of area A3 in FIG. Figure 36-Figure 39 Along Fig.28 and Fig.29 A schematic cross-sectional view of line DD' in FIG. Fig.40 For along Fig.29 A schematic cross-sectional view of line EE' in FIG. Figure 41-43 Along Fig.28 and Fig.29 A schematic cross-sectional view of line DD' in FIG. Fig.44 for Fig.29 An enlarged schematic diagram of area A4 in FIG.

[0222] It should be noted that Figure 30-Figure 35 The opening shapes of the relevant film layers and the size relationship of each opening are respectively illustrated. Taking the opening mark of the first organic layer 251 as an example, Figure 30-Figure 35 They are marked as 251OP1 and 251OP2 respectively.

[0223] in, Fig.30 , Fig.32 and Fig.34 The first film layer 250 includes a first organic layer 251, which can be referred to

[0224] Fig.31 , Fig.33 and Fig.35 An embodiment in which the first film layer 250 includes a first organic layer 251 and a protective layer is illustrated.

[0225] Figure 28-Figure 43 For the parts that are the same as those in the aforementioned figures, please refer to the aforementioned contents and will not be described again here.

[0226] like Figure 28-Figure 44 As shown, the display panel includes a pixel light-transmitting area PTA and a non-light-transmitting area PNTA, and the non-light-transmitting area PNTA includes a light-emitting element setting area.

[0227] The light emitting element setting area is the area where the light emitting element 300 is bonded. Fig.28 As shown in FIG. 1 , the light emitting element setting area includes areas for setting the blue light emitting element PB, the green light emitting element PG and the red light emitting element PR respectively. Fig.29 Fig.29 As shown, the light emitting element setting area includes areas for setting the blue light emitting element PB, the green light emitting element PG and the red light emitting element PR respectively, and includes a redundant setting area Pre. When the bonded light emitting element 300 fails, a normal light emitting element 300 can be re-bonded in the redundant setting area Pre for repair. The two connecting parts 240 in the redundant setting area Pre can be respectively connected to the two connecting parts 240 in the adjacent light emitting element setting area.

[0228] The blue light emitting element PB, the green light emitting element PG, and the red light emitting element PR may be used to constitute a pixel P.

[0229] The first organic layer 251 in the first film layer 250 includes a light absorbing material and transmits light through the openings. The first organic layer 251 is provided with a first opening OP1 (or opening OP) and a third opening OP3. The first opening OP1 defines a light emitting element setting area, and the third opening OP3 defines a pixel light transmission area PTA.

[0230] like Fig.36 As shown, the first film layer 250 includes a first organic layer 251 , and the electrode 320 of the light emitting element 300 fills the first opening OP1 of the first organic layer 251 .

[0231] like Fig.37 As shown, the first film layer 250 includes a first organic layer 251 and a protective layer 252 , which together form an opening OP of the first film layer 250 , and the electrode 320 of the light emitting element 300 fills the opening OP and contacts the protective layer 252 .

[0232] like Fig.38 and Fig.39 As shown, the first film layer 250 includes a first organic layer 251 and a protective layer 252 . In a first direction, a distance D1 between the light emitting element 300 and an edge of the first opening OP1 is greater than zero, wherein the first direction is parallel to the surface where the display panel is located.

[0233] The opening of the first organic layer 251 is expanded by a certain distance D1 compared to the light-emitting element 300 , so as to leave space for the transfer device 600 (such as a stamp) to clamp the light-emitting element 300 a and for the light-emitting element 300 a to align with the second electrode portion 520 .

[0234] When the first opening OP1 expands outward compared to the light emitting element 300, the connection portion 420 will be exposed, resulting in a problem of increased reflectivity. Therefore, the distance D1 cannot be too large. As an example, the distance D1 between the light emitting element 300 and the edge of the first opening OP1 is less than 10 microns.

[0235] A distance D1 between the light emitting element 300 and the edge of the first opening OP1 may be in a range of 2 micrometers to 7 micrometers.

[0236] The height of the first organic layer 251 may be lower than that of the light emitting element 300 , so as to facilitate the transportation of the light emitting element.

[0237] The driving substrate 200 includes a driving circuit layer 220 , a planarization layer 230 and a connection portion 240 . The planarization layer 240 is located between the driving circuit layer 220 and the connection portion 240 . The connection portion 240 is located between the planarization layer 230 and the first organic layer 251 . The first opening OP1 of the first organic layer 251 exposes the connection portion 240 .

[0238] The driving circuit layer 220 includes a thin film transistor TFT, and the connecting portion 240 includes a first connecting portion 241. The first connecting portion 241 is connected to the thin film transistor TFT through a contact hole CH of the planarization layer 230. The contact hole CH does not overlap with the first opening OP1 of the first organic layer 251, that is, the contact hole CH is arranged away from the light emitting element setting area.

[0239] The planarization layer 230 is provided with a fourth opening, which overlaps with the pixel light-transmitting area PTA. The first organic layer 251 covers the sidewall 230s of the fourth opening of the planarization layer 230 to shield light and reduce reflection.

[0240] The first film layer 250 further includes a protective layer 252 , and the protective layer 252 covers the sidewalls of the first opening OP1 and the sidewalls of the third opening OP3 of the first organic layer 251 .

[0241] The protective layer 252 is provided with a fifth opening, and the fifth opening is located in the pixel light-transmitting area PTA. The shape of the fifth opening is a rectangle with four corners removed, for example, a rounded rectangle, such as Fig.33 The opening shape 252OP2 of the protective layer 252 is shown in FIG. By adopting this solution, the problem of holes in the first organic layer or holes in the protective layer caused by the high step difference at the edge of the pixel light-transmitting area PTA can be improved, as well as the problems of peeling liquid penetration and over-engraving at the four corners caused by the above problems.

[0242] Fig.38 and Fig.39 The difference is that in Fig.38 In the embodiment, a first organic layer 251 is further included between the first electrode 321 and the second electrode 322. Fig.39 In the process, the first organic layer 251 may not be arranged between the first electrode 321 and the second electrode 322. Thus, a protective layer may not be arranged between the first electrode 321 and the second electrode 322, which is beneficial to the release of the gas generated in the first organic layer 251 in the subsequent high-temperature process, otherwise the problem of expansion and rupture of the first organic layer may be caused.

[0243] like Fig.40 As shown, the driving substrate 200 includes a redundant electrode Pre. Since no eutectic process occurs, the redundant electrode Pre may be the second electrode portion 520. As an example, the redundant electrode Pre includes gold (Au).

[0244] like Fig.41 and Fig.42 As shown, the display panel also includes a packaging layer 700, which may include a packaging glue 710 and a cover plate 720. The packaging glue 710 covers the driving substrate 200 and is used to encapsulate the light-emitting element 300. The packaging glue 710 covers the side of the light-emitting element 300 and may also cover the upper surface of the light-emitting element 300 at the same time.

[0245] It should be noted that in other drawings where the encapsulation layer 700 is not shown, the encapsulation layer 700 may also be provided above the driving substrate of the display panel, and the specific structure of the encapsulation layer 700 may refer to the relevant drawings.

[0246] like Fig.42 As shown, the display panel further includes a black matrix 800, which is located on the side of the encapsulation glue 710 away from the driving substrate 200, and the black matrix 800 is provided with a first light-transmitting hole 810 and a second light-transmitting hole 820, the first light-transmitting hole 810 is located in the light-emitting element setting area, and the second light-transmitting hole 820 is located in the pixel light-transmitting area PTA. The black matrix 800 may be in a mesh shape, and the first light-transmitting hole 810 and the second light-transmitting hole 820 are its grids. The black matrix 800 can reduce the reflectivity of the display panel and reduce the crosstalk between the light-emitting elements 300.

[0247] In the second direction, the distance D2 between the edge of the first light-transmitting hole 810 and the light-emitting element 300 is smaller than the distance D1 between the edge of the first opening OP1 and the light-emitting element 300, wherein the second direction is parallel to the plane where the display panel is located. With this arrangement, the problem of high reflectivity caused by the connecting portion 240 located at the first opening OP1 can be further improved.

[0248] like Fig.42 and Fig.43 As shown, the packaging layer 700 of the display panel further includes an adhesive layer 730 , and the adhesive layer 730 is located between the packaging glue 710 and the cover plate 720 .

[0249] like Fig.43 As shown, the display panel further includes a color resist 900, which covers the light emitting element 300 to filter light and improve light purity.

[0250] like Fig.44 As shown, the driving substrate further includes a redundant electrode Pre. Since no eutectic process occurs, the redundant electrode Pre can be the second electrode portion 520. As an example, the redundant electrode Pre includes gold (Au), and the color resist 900 covers the redundant electrode Pre to reduce the influence of the redundant electrode Pre on the reflectivity of the display panel.

[0251] The color resist 900 includes a blue color resist 910, a green color resist 920, and a red color resist 930. The light emitting element 300 includes a blue light emitting element PB, a green light emitting element PG, and a red light emitting element PR. The blue color resist 910 covers the blue light emitting element PB, the green color resist 920 covers the green light emitting element PG, and the red color resist 930 covers the red light emitting element PR. In other embodiments, the red color resist may not be provided. On the one hand, the light extraction efficiency of the red light emitting element is low, and the addition of the red color resist further reduces the light extraction efficiency of the light emitting element. On the other hand, the wavelength band of the light reflected by the redundant electrode Pre or the connecting portion 240 is mostly biased towards the red light band. Even if the red color resist is provided, the anti-reflection effect is very limited.

[0252] The display panel 100 provided by the embodiment of the present invention can be used for transparent display.

[0253] Fig.45 A schematic diagram of a display device provided by an embodiment of the present invention. Fig.45 The display device 1000 in the embodiment takes a mobile phone as an example. The display device provided in the embodiment of the present invention may include but is not limited to a mobile phone, a tablet computer, a wall-mounted display screen, a transparent display device and other devices with display functions.

[0254] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A display panel, characterized in that: include: A driving substrate comprises a first film layer, wherein the first film layer is provided with an opening; A light emitting element, located on the driving substrate, comprising a main body and electrodes; wherein the electrode comprises a first portion located at the opening; wherein, The first film layer includes a first organic layer and a protective layer, the protective layer covers the first organic layer, the first organic layer is provided with a first opening, the protective layer is provided with a second opening, and the second opening overlaps with the first opening; or The display panel includes a pixel light-transmitting area and a non-light-transmitting area, the non-light-transmitting area includes a light-emitting element setting area, the first film layer includes a first organic layer, the first organic layer is provided with a first opening and a third opening, the first opening defines the light-emitting element setting area, and the third opening defines the pixel light-transmitting area.

2. The display panel according to claim 1, characterized in that: The driving substrate further includes a planarization layer and a connection portion, wherein the planarization layer is located on a side of the first organic layer away from the light emitting element, the connection portion is located between the first organic layer and the planarization layer, and the first portion of the electrode is electrically connected to the connection portion.

3. The display panel according to claim 2, characterized in that: The driving substrate further comprises a driving circuit layer, the driving circuit layer is located on a side of the planarization layer away from the first organic layer, and the driving circuit layer comprises a thin film transistor; The connection portion includes a first connection portion, and the thin film transistor is connected to the first connection portion.

4. The display panel according to claim 3, characterized in that: The driving substrate further includes a substrate and a passivation layer. The substrate is located on a side of the driving circuit layer away from the first organic layer, and the passivation layer is located between the driving circuit layer and the planarization layer.

5. The display panel according to claim 1, characterized in that: The first organic layer is provided with a first opening, and along a direction from the first film layer to the light emitting element, a side wall of the first opening is inclined toward an interior of the first opening.

6. The display panel according to claim 1, characterized in that: The first organic layer includes a negative photoresist.

7. The display panel according to claim 1, characterized in that: The first organic layer includes a light absorbing material.

8. The display panel according to claim 1, characterized in that: The protection layer covers a sidewall of the first opening of the first organic layer.

9. The display panel according to claim 1, characterized in that: The protective layer includes an inorganic layer.

10. The display panel according to claim 9, characterized in that: The protection layer includes a stacked silicon nitride layer and a silicon oxide layer, and the silicon nitride layer is located between the silicon oxide layer and the first organic layer.

11. The display panel according to claim 10, characterized in that: The thickness of the silicon nitride layer is smaller than the thickness of the silicon oxide layer.

12. The display panel according to claim 1, characterized in that: The second opening is larger than the first opening.

13. The display panel according to claim 1, characterized in that: In the first direction, the distance between the electrode of the light emitting element and the edge of the first opening is greater than zero; Wherein, the first direction is parallel to the plane where the display panel is located.

14. The display panel according to claim 13, characterized in that: The distance between the electrode of the light emitting element and the edge of the first opening is less than 10 micrometers.

15. The display panel according to claim 13, characterized in that: The driving substrate further includes a driving circuit layer, a planarization layer and a connecting portion; The planarization layer is located between the driving circuit layer and the connecting portion; The connecting portion is located between the planarization layer and the first organic layer; The first opening of the first organic layer exposes the connecting portion; The driving circuit layer includes a thin film transistor; The connecting portion includes a first connecting portion, and the first connecting portion is connected to the thin film transistor through a contact hole of the planarization layer; The contact hole does not overlap with the first opening.

16. The display panel according to claim 15, characterized in that: The planarization layer is provided with a fourth opening, the fourth opening overlaps with the pixel light-transmitting region, and the first organic layer covers a side wall of the fourth opening of the planarization layer.

17. The display panel according to claim 1, characterized in that: The height of the first organic layer is lower than the height of the light emitting element.

18. The display panel according to claim 1, characterized in that: The first film layer further includes a protection layer, and the protection layer covers the sidewall of the first opening and the sidewall of the third opening.

19. The display panel according to claim 18, characterized in that: The protection layer is provided with a fifth opening, the fifth opening is located in the pixel light-transmitting area, and the shape of the fifth opening is a rectangle with four corners removed.

20. The display panel according to claim 1, characterized in that: Also includes: Packaging glue, covering the driving substrate; The black matrix is ​​located on the side of the packaging glue away from the driving substrate. The black matrix is ​​provided with a first light-transmitting hole and a second light-transmitting hole. The first light-transmitting hole is located in the light-emitting element setting area, and the second light-transmitting hole is located in the pixel light-transmitting area.

21. The display panel according to claim 20, characterized in that: In the second direction, the distance between the edge of the first light-transmitting hole and the light-emitting element is smaller than the distance between the edge of the first opening and the light-emitting element; Wherein, the second direction is parallel to the plane where the display panel is located.

22. The display panel according to claim 1, characterized in that: Also includes: A color resist covers the light emitting element.

23. The display panel according to claim 22, characterized in that: The driving substrate further includes a redundant electrode, the redundant electrode is located in the light emitting element setting area, and the color resist covers the redundant electrode.

24. The display panel according to claim 22, characterized in that: The color resist includes a blue color resist and a green color resist, the light emitting elements include a blue light emitting element, a green light emitting element and a red light emitting element, the blue color resist covers the blue light emitting element, and the green color resist covers the green light emitting element.

25. The display panel according to claim 1, characterized in that: The electrode fills the opening.

26. The display panel according to claim 1, characterized in that: The electrodes include a first electrode and a second electrode, and the first electrode and the second electrode are both located on a side of the main body facing the drive substrate.

27. A method for manufacturing a display panel, characterized in that: forming a first film layer of a driving substrate, wherein the first film layer is provided with an opening; forming a photoresist layer, wherein the photoresist layer is located on one side of the first film layer; forming a photoresist pattern, the photoresist pattern having a through hole, the through hole overlapping the opening; forming an electrode layer, the electrode layer comprising a first electrode portion and a second electrode portion, the first electrode portion covering the photoresist pattern, the second electrode portion comprising a portion located in the opening; removing the photoresist pattern and the first electrode portion; Providing a light-emitting element, and transferring the light-emitting element to above the driving substrate, wherein the light-emitting element includes a main body and a bonding electrode; The light emitting element and the second electrode portion are bonded to each other so that the bonding electrode and the second electrode portion form an electrode of the light emitting element.

28. The manufacturing method according to claim 27, characterized in that: The photoresist layer is a negative photoresist.

29. The method according to claim 28, characterized in that: The first film layer forming the driving substrate comprises: forming a first organic layer, wherein the first organic layer is provided with a first opening; The first organic layer is a negative photoresist; The first organic layer and the photoresist pattern are formed by using the same mask.

30. The method according to claim 27 The first film layer forming the driving substrate comprises: forming a first organic layer, wherein the first organic layer is provided with a first opening; forming a protective layer, wherein the protective layer covers the first organic layer, the protective layer is provided with a second opening, and the second opening overlaps the first opening; The forming of the photoresist layer comprises: The photoresist layer is located on a side of the protection layer away from the first organic layer.

31. A display device, characterized in that: Comprising a display panel as described in any one of claims 1-26.

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