Organic light emitting device including electron transport layer and method of manufacturing the same

Abstract

An organic light emitting device and a method of manufacturing the same. The method includes depositing a mixed layer and a buffer layer as an electron transport layer on an emission layer by performing a single round trip of a source unit in a scan direction of a substrate, the source unit including first to third injectors, wherein the mixed layer includes a mixture of a first semiconductor material and a second semiconductor material, and the buffer layer includes a single material layer including a third semiconductor material.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2016-0082972, filed on June 30, 2016, which is incorporated herein by reference as fully set forth herein for all purposes. Technical Field

[0003] Exemplary embodiments relate to organic light-emitting devices having an electron transport layer disposed between an emitting layer and a counter electrode, and a method for efficiently depositing the electron transport layer to manufacture the organic light-emitting device. Background Technology

[0004] Organic light-emitting devices (OLEDs) achieve color images by recombining holes and electrons injected from the anode and cathode, respectively. The pixels of an OLED have a stacked structure, in which an emitting layer is disposed between the pixel electrode, which serves as the anode, and the opposing electrode, which serves as the cathode.

[0005] Each pixel can be a sub-pixel of, for example, a red pixel, a green pixel, and a blue pixel, and the desired color can be achieved by combining sub-pixels of the three colors. That is, each pixel has a structure in which an emitting layer emitting light of one of the three colors, red, green, and blue, is disposed between two electrodes, and the color of a unit pixel is expressed by an appropriate combination of the three colors.

[0006] A hole transport layer (HTL) and a hole injection layer (HIL) can be disposed between the emitter layer and the pixel electrode, and an electron transport layer (ETL) and an electron injection layer (EIL) can be disposed between the emitter layer and the opposite electrode.

[0007] The information disclosed in this background section is only intended to enhance the understanding of the background art of the inventive concept, and therefore may contain information that does not form prior art known to those skilled in the art in this country. Summary of the Invention

[0008] An exemplary embodiment provides an organic light-emitting device having an electron transport layer disposed between an emitting layer and a counter electrode, and a method for effectively depositing the electron transport layer to manufacture the organic light-emitting device.

[0009] Other aspects will be set forth in part in the description which follows, and will be apparent in part from the description, or may be learned by practicing the inventive concept.

[0010] An exemplary embodiment discloses an organic light-emitting device, including: a pixel electrode connected to a thin-film transistor (TFT); a counter electrode corresponding to the pixel electrode; an emitter layer disposed between the pixel electrode and the counter electrode; and an electron transport layer disposed between the emitter layer and the counter electrode. The electron transport layer includes a hybrid layer and a buffer layer disposed between the emitter layer and the hybrid layer. The hybrid layer includes a mixture of multiple semiconductor materials, and the buffer layer includes a single semiconductor material.

[0011] The hybrid layer may include a first semiconductor material and a second semiconductor material that are different from each other.

[0012] The content of the first semiconductor material can be lowest at the two edges of the mixed layer, gradually increasing towards the center of the mixed layer, and highest at the center of the mixed layer. The content of the second semiconductor material can be highest at the two edges of the mixed layer, gradually decreasing towards the center of the mixed layer, and lowest at the center of the mixed layer.

[0013] The buffer layer may include a third semiconductor material that is different from the first semiconductor material and the second semiconductor material.

[0014] Organic light-emitting devices may also include an electron injection layer between an electron transport layer and a counter electrode.

[0015] The organic light-emitting device may also include a hole injection layer and a hole transport layer, wherein the hole injection layer and the hole transport layer are located between the pixel electrode and the emission layer.

[0016] The TFT may include: an active layer; a gate electrode facing the active layer, having an insulating layer between the gate electrode and the active layer; a source electrode connected to one edge of the active layer; and a drain electrode connecting the other edge of the active layer to a pixel electrode.

[0017] An exemplary embodiment also discloses a method for manufacturing an organic light-emitting device, comprising: preparing a substrate on which an emission layer is formed; preparing a source unit, wherein a first semiconductor material, a second semiconductor material, and a third semiconductor material, which serve as materials for depositing an electron transport layer on the emission layer, are respectively housed in a first ejector, a second ejector, and a third ejector; and depositing a mixed layer and a buffer layer as an electron transport layer on the emission layer by performing a single round trip of the source unit in a scanning direction of the substrate, wherein the source unit includes the first ejector to the third ejector. The mixed layer comprises a mixture of the first semiconductor material and the second semiconductor material, and the buffer layer comprises a single material layer containing the third semiconductor material.

[0018] Compared to the first and second injectors, the third injector is located upstream in the forward direction of a single round trip of the source unit.

[0019] The third semiconductor material can be ejected from the third ejector during a single round trip forward movement of the source cell, and the ejection of the third semiconductor material can be blocked during a backward movement of the source cell.

[0020] When the source unit moves in the rearward direction, the ejection outlet of the third injector can be blocked by the shield.

[0021] The first ejector and the second ejector can continuously eject the first semiconductor material and the second semiconductor material during both the forward and backward movements of the source unit in a single round trip.

[0022] Compared to the first injector, the second injector can be positioned upstream in the forward direction of a single round trip of the source unit.

[0023] The content of the first semiconductor material can be lowest at both edges of the mixing layer, gradually increasing towards the center of the mixing layer, and highest at the center of the mixing layer. The content of the second semiconductor material can be highest at both edges of the mixing layer, gradually decreasing towards the center of the mixing layer, and lowest at the center of the mixing layer.

[0024] The first semiconductor material, the second semiconductor material, and the third semiconductor material are different from each other.

[0025] A buffer layer may be formed on the emission layer, and a hybrid layer may be formed on the buffer layer.

[0026] The above general description and the following detailed description are exemplary and illustrative, and are intended to provide further explanation of the claimed subject matter. Attached Figure Description

[0027] The accompanying drawings illustrate exemplary embodiments of the inventive concept and, together with the description, serve to explain the principles of the inventive concept. The drawings are included to provide a further understanding of the inventive concept and are incorporated in and constitute a part of this specification.

[0028] Figure 1 This is a schematic diagram of the structure of a deposition apparatus for manufacturing an organic light-emitting device according to an exemplary embodiment.

[0029] Figure 2 It is based on an exemplary implementation method. Figure 1 A cross-sectional view of the structure of pixels in an organic light-emitting device manufactured by a deposition apparatus.

[0030] Figure 3 This illustrates an exemplary embodiment. Figure 1 A cross-sectional view of the source unit of the deposition apparatus spraying semiconductor material used to form an electron transport layer onto the substrate of the organic light-emitting device.

[0031] Figure 4A and Figure 4B This illustrates how, according to an exemplary embodiment, forward and backward operations are formed in a single round trip representing the source unit. Figure 3 A cross-sectional view of the electron transport layer.

[0032] Figure 5 It shows through Figure 4A and Figure 4B A diagram illustrating the content profile of the mixed layer of the electron transport layer formed by a single round trip of the source unit. Detailed Implementation

[0033] In the following description, numerous specific details are set forth for illustrative purposes to provide a thorough understanding of the various exemplary embodiments. However, it will be apparent that the various exemplary embodiments may be practiced without these specific details or by one or more equivalent arrangements. In other instances, well-known structures and devices are shown in block diagram form to avoid unnecessarily obscuring the various exemplary embodiments.

[0034] In the accompanying drawings, the dimensions and relative dimensions of layers, films, panels, regions, etc., may be exaggerated for clarity and descriptive purposes. Furthermore, the same reference numerals denote the same elements.

[0035] When an element or layer is referred to as being “on,” “connected to,” or “joined to” another element or layer, it may be directly on, connected to, or joined to the other element or layer, or there may be intermediate elements or layers. However, when an element or layer is referred to as being “directly on,” “directly connected to,” or “directly joined to” another element or layer, there are no intermediate elements or layers. For the purposes of this disclosure, “at least one of X, Y, and Z” and “at least one selected from the group consisting of X, Y, and Z” can be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z such as, for example, XYZ, XYY, YZ, and ZZ. Throughout the specification, the same numbers refer to the same elements. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items.

[0036] Although the terms “first,” “second,” etc., may be used herein to describe various elements, components, regions, layers, and / or segments, these elements, components, regions, layers, and / or segments should not be limited by these terms. These terms are used to distinguish one element, component, region, layer, and / or segment from another element, another component, another region, another layer, and / or another segment. Therefore, without departing from the teachings of this disclosure, the first element, first component, first region, first layer, and / or first segment discussed below may be referred to as a second element, second component, second region, second layer, and / or second segment.

[0037] For descriptive purposes, spatially relative terms such as “below,” “under,” “down,” “above,” and “above” are used herein to describe the relationship between one element or feature and another element (or feature) or feature (or feature) as shown in the accompanying drawings. In addition to the orientations depicted in the drawings, the spatially relative terms are intended to cover different orientations of the device during use, operation, and / or manufacture. For example, if the device in the drawings is flipped, an element described as “below” or “under” other elements or features will be oriented “above” other elements or features. Thus, the exemplary term “below” can cover both orientations of above and below. Furthermore, the device may be oriented in other ways (e.g., rotated 90 degrees or in other orientations), and therefore, the spatially relative descriptive terms used herein should be interpreted accordingly.

[0038] The terminology used herein is for the purpose of describing particular embodiments and is not intended to be limiting. Unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “the” as used herein are intended to also include the plural forms. Furthermore, when used in this specification, the terms “comprises / comprising” and / or “includes / including” specify the presence of stated features, integrals, steps, operations, elements, components, and / or groups thereof, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components, and / or groups thereof.

[0039] This document describes various exemplary embodiments with reference to cross-sectional views as schematic diagrams of idealized exemplary implementations and / or intermediate structures. Therefore, variations in the illustrated shapes will be expected as a result of, for example, manufacturing techniques and / or tolerances. Consequently, the exemplary embodiments disclosed herein should not be construed as limited to the specific shapes shown, but should include deviations in shape caused, for example, by manufacturing processes. The areas shown in the figures are schematic in nature, and their shapes are not intended to represent the actual shapes of areas of the device, nor are they intended to be limiting.

[0040] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. Terms such as those defined in common dictionaries shall be interpreted as having the same meaning as their meaning in the context of the relevant field, and shall not be interpreted in an idealized or overly formal sense unless expressly defined herein.

[0041] Figure 1 This is a schematic diagram of the structure of a deposition apparatus for manufacturing an organic light-emitting device according to an exemplary embodiment.

[0042] like Figure 1 The deposition apparatus described herein, according to an exemplary embodiment, includes: a mask 200 for forming a desired pattern on a substrate 300 of an organic light-emitting device, wherein a material to be deposited is deposited on the substrate 300; and a source unit 100 that sprays deposition gas toward the substrate 300 by moving within a chamber 400.

[0043] Therefore, when the source unit 100 sprays deposition gas in the chamber 400, the corresponding deposition gas passes through the opening formed in the mask 200 and is deposited on the substrate 300, thus forming a thin film with a predetermined pattern on the substrate 300.

[0044] The source unit 100 described herein is used to form an electron transport layer 324 on the substrate 300 of the organic light-emitting device (see [link]). Figure 2 The source unit 100 may include a first ejector 110 that ejects a first semiconductor material 111 as a deposition gas, a second ejector 120 that ejects a second semiconductor material 121 as a deposition gas, and a third ejector 130 that ejects a third semiconductor material 131 as a deposition gas. The first to third semiconductor materials 111, 121, and 131 are different from each other. For the first to third semiconductor materials 111, 121, and 131, the third semiconductor material 131 is the material used to form a buffer layer 324a, which is a single material layer of the electron transport layer 324, and the first semiconductor material 111 and the second semiconductor material 121 are the materials used to form a mixed layer 324b of the electron transport layer 324. A shielding member 132 is disposed in the source unit 100 and, if necessary, blocks the ejector outlet of the third ejector 130.

[0045] Reference Figure 2 The detailed structure of the organic light-emitting device including the electron transport layer 324 described above is described. Figure 2This is a cross-sectional view of a single subpixel of an organic light-emitting device, and multiple subpixels are repeatedly arranged in the display area on the substrate 300. The actual thickness of the substrate 300 of the organic light-emitting device is significantly greater than the actual thickness of the thin film layer thereon. However, in the accompanying drawings, for ease of illustration, the thickness of the substrate 300 and the thickness of the subpixels are drawn to be similar to each other.

[0046] Reference Figure 2 A buffer layer 330 is formed on a substrate 300, and a thin-film transistor (TFT) is formed on the buffer layer 330.

[0047] The TFT includes an active layer 331, a gate insulating film 332 covering the active layer 331, and a gate electrode 333 on the gate insulating film 332.

[0048] In addition, an interlayer insulating layer 334 is formed on the gate electrode 333, and a source electrode 335a and a drain electrode 335b are formed on the interlayer insulating layer 334.

[0049] The source electrode 335a and the drain electrode 335b are contacted by contact holes formed in the gate insulating film 332 and the interlayer insulating layer 334, respectively, to the source region and the drain region of the active layer 331.

[0050] The pixel electrode 320 of the organic light-emitting diode (OLED) is connected to the drain electrode 335b. The pixel electrode 320 is formed on the planarization film 337, and the pixel defining layer 338 is formed on the planarization film 337. The emission layer 323 and the intermediate layer including the emission layer 323 are formed on the planarization film 337, and the opposing electrode 326 is formed on the intermediate layer.

[0051] The auxiliary layer includes a hole injection layer 321 and a hole transport layer 322 disposed between the pixel electrode 320 and the emitter layer 323, and an electron transport layer 324 and an electron injection layer 325 disposed between the emitter layer 323 and the counterpart electrode 326.

[0052] Hole transport layer 322, electron transport layer 324, and electron injection layer 325 are common layers formed on the entire pixel area, similar to the opposing electrode 326. Therefore, the corresponding layers (hole transport layer 322, electron transport layer 324, and electron injection layer 325) are formed using an open mask 200, wherein deposition is performed over the entire display area of ​​the substrate 300 without any patterning through the open mask 200.

[0053] Here, the electron transport layer 324 is described in detail. The electron transport layer 324 includes two layers: a buffer layer 324a that directly contacts the emission layer 323 and a hybrid layer 324b disposed on the buffer layer 324a.

[0054] As described above, the buffer layer 324a is a single material layer formed by depositing a third semiconductor material 131 ejected from the third ejector 130. The hybrid layer 324b is a composite material layer formed by mixing a first semiconductor material 111 ejected from the first ejector 110 with a second semiconductor material 121 ejected from the second ejector 120.

[0055] The electron transport layer 324 comprises two layers (i.e., a buffer layer 324a comprising a single material and a hybrid layer 324b comprising a composite material rather than a single material) to improve both the function of smoothly supplying electrons to the emission layer 323 and the function of blocking holes from moving toward the opposite electrode 326.

[0056] In other words, in the structure of the organic light-emitting diode (EL) described above, light is emitted from the emission layer 323 through holes moving from the pixel electrode 320 through the hole injection layer 321 and the hole transport layer 322 to the emission layer 323, and through electrons moving from the relative electrode 326 through the electron injection layer 325 and the electron transport layer 324 to the emission layer 323. However, if the holes that have moved to the emission layer 323 also move to the relative electrode 326, the movement of electrons is interrupted, and therefore the luminous efficiency may be reduced.

[0057] However, the hybrid layer 324b formed by mixing the first semiconductor material 111 and the second semiconductor material 121 has a higher energy level barrier than the electron transport layer 324 formed as a single material layer. Therefore, the hybrid layer 324b serves as a barrier to prevent holes from penetrating the emitter layer 323 and infiltrating the opposite electrode 326.

[0058] However, if the electron transport layer 324 comprises only the mixing layer 324b, the movement of electrons from the opposing electrode 326 to the emitter layer 323 may be difficult. That is, electrons, like holes, cannot move easily due to the high energy level barrier between the mixing layer 324b and the emitter layer 323. However, as in the present exemplary embodiment, when a buffer layer 324a, which is a single material layer, is formed between the emitter layer 323 and the mixing layer 324b, the buffer layer 324a lowers the energy level barrier, and therefore electrons can move easily to the emitter layer 323.

[0059] Therefore, it can both block holes from moving toward the opposite electrode 326 and enable electrons to move smoothly toward the emission layer 323.

[0060] The electron transport layer 324, which has the above advantages, can be manufactured in a single round trip of the source unit 100.

[0061] In the following text, reference will be made to Figure 3 , Figure 4A and Figure 4BThe method for fabricating the electron transport layer 324 is described below. When depositing the electron transport layer 324, an open mask 200 is placed between the source cell 100 and the substrate 300. However, for ease of explanation, the open mask 200 is omitted from the accompanying drawings. Furthermore, when depositing the electron transport layer 324, an emitter layer 323 has already been formed over the substrate 300 in the exposed area of ​​the pixel defining layer 338. Figure 3 , Figure 4A and Figure 4B As shown, the emission layer 323 is formed on the lower surface of the substrate 300 (i.e. the surface of the substrate 300 facing the source unit 100).

[0062] When source unit 100 operates in this state, such as Figure 3 As depicted, first to third semiconductor materials 111, 121, and 131 are ejected from first to third ejectors 110, 120, and 130, respectively, and the ejected deposition gas is deposited on substrate 300, whereby an emission layer 323 is formed. However, the source cell 100 does not remain stationary but performs a single round trip, i.e., forward in the direction indicated by arrow A and backward as indicated by arrow B. During this single round trip, a buffer layer 324a and a mixing layer 324b are formed. In the forward direction (direction A), the third ejector 130 is disposed on the front side of the source cell 100, compared to the first ejector 110 and the second ejector 120. Therefore, when the source cell 100 starts the deposition operation by moving in the forward direction, the third semiconductor material 131 ejected from the third ejector 130 is first deposited onto the substrate 300, and then the first semiconductor material 111 and the second semiconductor material 121 ejected from the first ejector 110 and the second ejector 120 are deposited on the third semiconductor material 131.

[0063] The ejection directions of the first semiconductor material 111 and the second semiconductor material 121 ejected from the first ejector 110 and the second ejector 120, respectively, are set such that the regions of the substrate 300 where the first semiconductor material 111 and the second semiconductor material 121 are deposited substantially overlap each other. Therefore, based on the forward direction (direction A), the second ejector 120 is located upstream of the first ejector 110. However, instead of depositing the second semiconductor material 121 first, the first semiconductor material 111 and the second semiconductor material 121 are co-deposited by mixing with each other.

[0064] When the source unit 100 moves in the rearward direction as indicated by arrow B, the spray orifice of the third ejector 130 is blocked by the shield 132. That is, the buffer layer 324a is formed only when the source unit 100 moves in the forward direction, and when the source unit 100 moves in the rearward direction, only the mixture layer 324b is formed by the spray from the first ejector 110 and the second ejector 120. In other words, the first ejector 110 and the second ejector 120 operate continuously during a single round trip of the source unit 100, and the third ejector 130 operates only in the forward direction during a single round trip of the source unit 100. Of course, the third ejector 130 is not shut off; instead, the deposition gas is prevented from moving towards the substrate 300 by blocking the spray outlet of the third ejector 130 with the shield 132.

[0065] The process of forming the electron transport layer 324 through a single round trip of the source unit 100 can be summarized as follows.

[0066] First, such as Figure 4A As depicted, a substrate 300 on which an emission layer 323 is fixed is placed in a chamber 400 (see reference). Figure 1 In the process of operating the source unit 100, the source unit 100 is moved in the forward direction as indicated by arrow A. Then, the buffer layer 324a and the mixing layer 324b of the electron transport layer 324 are formed by spraying deposition gas (i.e., the first semiconductor material sprayed from the first ejector 110, the second ejector 120 and the third ejector 130 to the third semiconductor materials 111, 121 and 131, respectively). As described above, the deposition gas (i.e., the third semiconductor material 131 sprayed from the third ejector 130 located upstream in the forward direction (direction A)) is first deposited on the substrate 300 to form the buffer layer 324a, and then the deposition gas (i.e., the first semiconductor material 111 and the second semiconductor material 121 sprayed from the first ejector 110 and the second ejector 120, respectively) is deposited on the buffer layer 324a to form the mixing layer 324b.

[0067] Next, as Figure 4B As depicted, the source unit 100 moves in the rearward direction as indicated by arrow B. At this time, the ejection outlet of the third ejector 130 is covered by the shield 132. Therefore, when the source unit 100 moves in the rearward direction, only the mixed layer 324b is formed by the first semiconductor material 111 and the second semiconductor material 121 ejected from the first ejector 110 and the second ejector 120, respectively.

[0068] In this way, the electron transport layer 324, which includes a buffer layer 324a as a single material layer and a hybrid layer 324b as a composite material layer, can be easily realized in a single round trip of the source unit 100.

[0069] Since the hybrid layer 324b is formed through a single round trip of the source cell 100, the content profiles of the first semiconductor material 111 and the second semiconductor material 121 formed on the substrate 300 can be as follows: Figure 5 The shape is depicted in the figure. That is, although the deposition areas of the first ejector 110 and the second ejector 120 substantially overlap each other, the concentration distribution of the first semiconductor material 111 is biased on the upper left side of the figure, and the concentration distribution of the second semiconductor material 121 is biased on the upper right side of the figure. Furthermore, when the source cell 100 moves in the forward direction, the first ejector 110 enters the region of the substrate 300 later than the second ejector 120, and when the source cell 100 moves in the backward direction, the first ejector 110 leaves the region of the substrate 300 earlier than the second ejector 120, and therefore the content of the first semiconductor material 111 is relatively low at the two edges of the mixing layer 324b. Conversely, the content of the first semiconductor material 111 gradually increases from the edges toward the center region, and is highest at the center of the mixing layer 324b. The content of the first semiconductor material 111 in the mixing layer 324b is a relative content, and therefore, in the case of the second semiconductor material 121, the content of the second semiconductor material 121 is highest at the edges and lowest at the center of the mixing layer 324b. This type of content profile is formed due to a single round trip deposition of source cell 100. In other words, this type of content profile can be an indication of the deposition of mixed layer 324b through a single round trip of source cell 100.

[0070] Therefore, in the method of manufacturing the electron transport layer 324 according to the exemplary embodiment, the electron transport layer 324 with improved hole blocking function and improved electron transport function can be formed by a simple process.

[0071] The first to third semiconductor materials 111, 121, and 131 can be selected from various known materials that can constitute the electron transport layer 324, and are not specifically limited thereto. Furthermore, in the hybrid layer 324b formed by moving the source unit 100 in the forward direction, the third semiconductor material 131 can be partially mixed into the hybrid layer 324b. However, since the energy level barrier of the hybrid layer 324b is increased by forming the hybrid layer 324b as a composite material layer, its functionality is not a problem.

[0072] Therefore, when using the aforementioned organic light-emitting device and its manufacturing method, the electron transport layer can be deposited in a single round trip of the source unit. This minimizes material loss. Furthermore, the electron transport layer comprises a stack of buffer and hybrid layers, wherein the hybrid layer provides hole blocking functionality, and the buffer layer provides smooth electron transport, thereby ensuring stable product performance.

[0073] While certain exemplary embodiments and examples have been described herein, other embodiments and modifications will become apparent from this description. Therefore, the inventive concept is not limited to these embodiments, but rather to the broader scope of the claims and various apparent modifications and equivalent arrangements.

Claims

1. An organic light-emitting device, comprising: Pixel electrodes are connected to thin-film transistors; The opposite electrode corresponds to the pixel electrode; An emission layer is disposed between the pixel electrode and the opposing electrode; as well as An electron transport layer is disposed between the emitter layer and the opposing electrode. in: The electron transport layer includes a mixing layer and a buffer layer disposed between the emission layer and the mixing layer; The hybrid layer comprises a first semiconductor material and a second semiconductor material that are mixed and different from each other, and is configured to prevent holes from penetrating the opposite electrode through the emitter layer; The buffer layer comprises a single semiconductor material and is configured to reduce the energy level barrier between the hybrid layer and the emitter layer; The content of the first semiconductor material is lowest at both edges of the mixed layer, gradually increases towards the center of the mixed layer, and is highest at the center of the mixed layer. The content of the second semiconductor material is highest at the two edges of the mixed layer, gradually decreases towards the center of the mixed layer, and is lowest at the center of the mixed layer. The buffer layer and the hybrid layer are formed through the following steps: A single round trip of the source cell is performed in the scanning direction of the emission layer, wherein: the buffer layer and the hybrid layer are deposited during the forward movement of the single round trip of the source cell, and only the hybrid layer is deposited during the backward movement of the single round trip of the source cell, and the source cell includes a first ejector, a second ejector, and a third ejector that respectively contain the first semiconductor material, the second semiconductor material, and the single semiconductor material.

2. The organic light-emitting device according to claim 1, wherein, The buffer layer includes a third semiconductor material that is different from the first semiconductor material and the second semiconductor material.

3. The organic light-emitting device according to claim 1 further includes an electron injection layer disposed between the electron transport layer and the opposing electrode.

4. The organic light-emitting device according to claim 1 further includes a hole injection layer and a hole transport layer, wherein the hole injection layer and the hole transport layer are disposed between the pixel electrode and the emission layer.

5. The organic light-emitting device according to claim 1, wherein, The thin-film transistor includes: Active layer; A gate electrode facing the active layer, and an insulating layer between the gate electrode and the active layer; The source electrode is connected to one edge of the active layer, and The drain electrode connects the other edge of the active layer to the pixel electrode.

6. A method for manufacturing an organic light-emitting device, the method comprising: A substrate is prepared, and an emission layer is formed on the substrate; Fabrication of a source unit, wherein a first semiconductor material, a second semiconductor material, and a third semiconductor material, which are used as materials for depositing an electron transport layer on the emitter layer, are respectively housed in a first ejector, a second ejector, and a third ejector; and A mixing layer and a buffer layer are deposited on the emitter layer by performing only a single round trip of the source cell in the scanning direction of the substrate. Wherein: the buffer layer is deposited and the hybrid layer is deposited on the buffer layer during the forward movement of the source unit in a single round trip; and only the hybrid layer is deposited during the backward movement of the source unit in a single round trip. in: The hybrid layer comprises a mixture of the first semiconductor material and the second semiconductor material, and is configured to prevent holes from penetrating the emitter layer; and The buffer layer comprises a single layer containing the third semiconductor material and is configured to lower the energy level barrier between the hybrid layer and the emitter layer. in: The content of the first semiconductor material is lowest at both edges of the mixed layer, gradually increases towards the center of the mixed layer, and is highest at the center of the mixed layer; and The content of the second semiconductor material is highest at the two edges of the mixed layer, gradually decreases towards the center of the mixed layer, and is lowest at the center of the mixed layer.

7. The method according to claim 6, wherein, Compared to the first and second injectors, the third injector is located upstream in the forward direction of the single round trip of the source unit.

8. The method according to claim 6, wherein, The third semiconductor material is ejected from the third ejector during the forward movement of the source unit in a single round trip, and the ejection of the third semiconductor material is blocked during the backward movement of the source unit.

9. The method according to claim 8, wherein, When the source unit moves in the rearward direction, the jet outlet of the third injector is blocked by a blocking member.

10. The method according to claim 6, wherein, The first injector and the second injector continuously inject the first semiconductor material and the second semiconductor material during both the forward movement and the backward movement of the source unit in a single round trip.

11. The method according to claim 6, wherein, Compared to the first injector, the second injector is positioned upstream in the forward direction of the single round trip of the source unit.

12. The method according to claim 6, wherein, The first semiconductor material, the second semiconductor material, and the third semiconductor material are different from each other.

13. The method according to claim 6, wherein, The buffer layer is formed on the emission layer, and the hybrid layer is formed on the buffer layer.

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