Concept of a defect center based quantum computer based on a group iv element substrate

Abstract

The invention relates to qubits (QUB) with quantum dots (NV) and nuclear qubits with at least one nuclear quantum dot, which can be in particular NV centers, the nuclear quantum dots are usually isotopes influenced by nuclear spin. These include specific devices for controlling quantum dots (NV). From this combination, the invention comprises quantum registers of at least two qubits, nuclear quantum registers of at least two nuclear qubits, nuclear-electronic quantum registers of one qubit and one nuclear qubit, and nuclear-electronic-nuclear-electronic quantum registers of at least one quantum register and at least two nuclear-electronic registers. The invention also relates to higher-level structures, quantum buses for transmitting quantum information and quantum computers composed of these. The invention also includes methods necessary for the manufacture and operation of the described devices. The invention consists mainly of the combination of all these devices and methods at once.

Description

Technical Field

[0001] This invention relates to NV centers in diamond, or G centers in silicon, or V centers in silicon carbide. Si The concept of a quantum computer based on other materials, such as a quantum ALU, is presented. This concept includes its elements, the necessary procedures for its operation, and the interactions between these elements. A quantum ALU consists of qubits used as terminals and several nuclear quantum dots for the actual execution of quantum operations. Specifically, the invention includes a quantum bus for entanglement of remotely located quantum dots in different quantum ALUs, as well as selection mechanisms and selective gating methods. Here, entanglement of two nuclear quantum dots in different quantum ALUs that are geographically distant is achieved via this quantum bus. Methods for reading out computational results with associated device elements are also provided. Background Technology

[0002] Existing technologies for reading out and controlling qubits

[0003] The article "Quantum Register Based on Individual Electronic and Nuclear Spin Qubits in Diamond" by Gurudev Dutt, Liang Jiang, Jeronimo R. Maze, AS Zibrov, et al., Science Journal, Vol. 316, pp. 1312-1316, June 1, 2007, DOI: 10.1126 / science.1139831, is known to be a method for using C 13 A method for coupling the nuclear spin of the nucleus with the electron spin of the NV center.

[0004] The article "Microstrip resonator for microwaves with controllable polarization" by Thiago P. Mayer Alegre, Antonio C. Torrezan de Souza, Gilberto Medeiros-Ribeiro et al., arXiv:0708.0777v2 [cond-mat.other], October 11, 2007, describes a cross-shaped conductive microwave resonator. See also [link to relevant documentation]. Figure 2One application of the cross-shaped microwave resonator, named by the authors in the first part of the article, is the control of paramagnetic centers using optically detected magnetic resonance (OMDR). A specific application is quantum information processing (QIP). The substrate of the conductive microwave resonator is a PCB (printed circuit board). The resonator's size is 5.5 cm, which is on the order of the wavelength of the microwave radiation to be coupled. The microwave resonator is powered by voltage control. The two beams of the resonator cross are electrically connected. Under the technical instruction of the article “Microstrip resonator for microwaves with controllable polarization” by Thiago P. Mayer Alegre, Antonio C. Torrezan de Souza, Gilberto Medeiros-Ribeiro et al., arXiv:0708.0777v2 [cond-mat.other] on October 11, 2007, it is not possible to selectively control a single paramagnetic center (NV1) without controlling other paramagnetic centers (NV1).

[0005] The article "Robust control of individual nuclear spins in diamond" by Benjamin Smeltzer, Jean McIntyre, Lilian Childress, et al., Physical Review (Phys. Rev.) A 80, 050302(R) - November 25, 2009, describes a method for accessing individual nuclear spins using NV centers in diamond. 13 The C-spin method.

[0006] The article "Photoelectrical imaging and coherent spin-state readout of single nitrogen-vacancy centers in diamond" by Petr Siyushev, Milos Nesladek, Emilie Bourgeois, Michal Gulka, Jaroslav Hruby, Takashi Yamamoto, Michael Trupke, Tokuyuki Teraji, Junichi Isoya, Fedor Jelezko, et al., Science, February 15, 2019, Vol. 363, No. 6428, pp. 728-731, DOI: 10.1126 / science.aav2789, describes the electron readout of the spin state of known NV centers.

[0007] The article “Universal quantum computation by the unitary control of ancilla qubits and using afixed ancilla-register interaction” by Timothy J. Proctor, Erika Andersson, Viv Kendon, et al., Physical Review (Phys. Rev.) A 88, 042330-October 24, 2013, describes a method using so-called ancilla qubits to employ ancilla bits to entangle the spin of the first nucleus with the spin of the second nucleus.

[0008] None of the aforementioned works disclosed a complete scheme for quantum computers or quantum computing systems based on impurities in crystals. Summary of the Invention

[0009] Technical issues

[0010] The present invention disclosed herein aims to provide a design, manufacturing, and operation scheme for a quantum computer that is likely to operate at room temperature, particularly when using an NV center.

[0011] Of course, this quantum computer can also operate at temperatures as low as near absolute zero.

[0012] Technical solutions to solve technical problems

[0013] The following technical benefits were developed in conjunction with the design of NV centers in diamond-based quantum computers. NV centers are nitrogen-vacancy defect centers in the diamond lattice. It has been recognized that these principles can be extended to mixed crystals of Group VI and elementally pure crystals. This paper describes exemplary features of diamond-based systems, silicon-based systems, silicon carbide-based systems, and mixed systems based on one, two, three, or four different elements of Group IV of the periodic table. Solutions based on NV centers in diamond are the most prominent because the greatest progress has been made in this area.

[0014] The quantum bits according to the present invention

[0015] Core idea

[0016] The core idea of ​​the invention is a quantum bit (QUB), which includes a particularly efficient and relatively easy-to-implement device for controlling quantum dots (NVs), for example, by means of electron beam lithography. Particularly preferably, the quantum dot (NV) is a point-like lattice defect in a crystal (whose atoms preferably do not possess magnetic moments). Preferably, the crystal material is a wide bandgap material to minimize the coupling of phonons with the quantum dot (NV). Particularly preferred materials are those using impurity centers such as NV centers, ST1 centers, or L2 centers in diamond as the substrate (D), or other impurity centers such as G centers in silicon as the substrate (D), particularly using G11 centers as quantum dots (NVs). In the case of impurity centers in diamond, NV centers are the most well-known and extensively studied impurity centers for this purpose. In the case of silicon as the substrate (D), G centers are the most well-known centers. See the article "Electron spin coherence exceeding seconds in high-purity silicon" by AMTyryshkin, S. Tojo, JJM Morton, H. Riemann, NVAbrosimov, P. Becker, H.-J. Pohl, Th. Schenkel, Mi.LWThewalt, K.M. Toh, SALyon, et al., Nature Mat. 11, 143 (2012). In the case of silicon carbide, the V-center and the de facto preferred V... SiImpurities are particularly suitable as impurity centers. See "Silicon carbide colorcenters for quantum applications" by Stefania Castelletto and Alberto Boretti et al., J. Phys. Photonics 2022 2001. Furthermore, other paramagnetic centers as quantum dots are conceivable. For example, NV centers in diamond, SiV centers, or GeV centers can also be used as quantum dots (NVs) in a substrate (D). Regarding paramagnetic centers in diamond, see Alexander Zaitsev's book "Optical Properties of Diamond," Springer, 2001 (June 20, 2001). Other materials can be used instead of silicon or diamond. Semiconductor materials are particularly preferred. So-called wide bandgap materials with large band gaps are particularly preferred because this makes coupling between phonons in the lattice and the electronic configuration of interfering sites more difficult. Such materials include, for example, BN, GaN, SiC, and SiGe, to which a complete list is not given here. However, GaAs can also be considered. Mixed crystals of Group III / V and II / VI are also possible.

[0017] Research here is progressing rapidly, so other substrates (D) with other paramagnetic interference centers will certainly be developed in the future. This will be covered by the technical teachings claimed herein.

[0018] Epitaxial layer and nucleus magnetic momentum degree of freedom

[0019] The proposed qubit (QUB) typically comprises a substrate (D) preferably provided with an epitaxial layer (DEPI). Later in this disclosure, a similarly constructed nuclear qubit (CQUB) with a nuclear quantum dot (CI) interacting by means of nuclear magnetic momentum is further described. Preferably, the epitaxial layer (DEPI) or even the entire substrate (D) is made of an isotopic mixture, wherein individual isotopes of the isotopic mixture preferably do not possess a magnetic moment. In the case of diamond as the substrate (D), 12 Carbon isotopes (C) are particularly suitable for producing epitaxial layers (DEPI) and / or substrates (D) because they lack a magnetic moment. When silicon is used as the substrate (D) material, silicon isotopes... 28 Si is particularly suitable for fabricating epitaxial layers (DEPI) and / or substrates (D) because it also lacks a magnetic moment. If silicon carbide (name: SiC) is used as the material for substrates (D) and / or epitaxial layers (DEPI), isotopic compounds... 28 Si 12C is particularly suitable as a material for substrate (D) and / or epitaxial layer (DEPI). Therefore, it is generally required that the atoms of the epitaxial layer (DEPI) or substrate (D) material preferably at least near the paramagnetic center or quantum dot (NV), or paramagnetic nucleus center and thus nuclear quantum dot (CI), which will also be described below, should consist only of isotopes without a magnetic moment. Since atoms of Group III and Group V of the periodic table generally do not have stable isotopes without a magnetic moment, mixtures and / or compounds of isotopes without a magnetic moment are considered, for example, those of Group VI. 12 C 14 C 28 Si、 30 Si、 70 Ge 72 Ge 74 Ge 76 Ge 112 Zn, 114 Zn, 116 Zn, 118 Zn, 120 Zn, 122 Zn, 124 Zn and / or the VIth Main Family 16 O、 18 O、 32 S, 34 S, 36 S, 74 Se、 76 Se、 78 Se、 80 Se、 82 Se、 120 Te、 122 Te、 124 Te、 126 Te、 128 Te、 130 Te and / or the Second Main Family 24 Mg 26 Mg 40 Ca, 42 Ca, 44 Ca, 46 Ca, 48 Ca, 84 Sr、 86 Sr、 88 Sr、 130 Ba、 132 Ba、 134 Ba、 136 Ba、 138 Ba and / or Subgroup II 46 Ti、 48 Ti、 50Ti、 90 Zr、 90 Zr、 92 Zr、 94 Zr、 96 Zr、 174 Hf, 176 Hf, 178 Hf and / or subfamily IV 50 Cr 52 Cr 53 Cr 92 Mo、 94 Mo、 96 Mo、 98 Mo、 100 Mo、 180 W, 182 W, 184 W, 186 W and / or subfamily IV 54 Fe、 56 Fe、 58 Fe、 96 Ru、 98 Ru、 100 Ru、 102 Ru、 104 Ru、 184 Os、 186 Os、 188 Os、 190 Os、 192 Os and / or subgroup VIII 58 Ni、 60 Ni、 62 Ni、 64 Ni、 102 Pd, 102 Pd, 104 Pd, 106 Pd, 108 Pd, 110 Pd, 190 Pt, 192 Pt, 194 Pt, 196 Pt, 198 Pt and / or subfamily X 64 Zn, 66 Zn, 68 Zn, 70 Zn, 106 Cd, 108 Cd, 110 Cd, 112 Cd, 114 Cd, 116 Cd, 196 Hg, 198 Hg, 200Hg, 202 Hg, 204 Hg and / or lanthanides 136 Ce、 138 Ce、 140 Ce、 142 Ce、 142 Nd, 144 Nd, 146 Nd, 148 Nd, 150 Nd, 144 Sm、 146 Sm、 148 Sm、 150 Sm、 152 Sm、 154 Sm、 152 Gd, 154 Gd, 156 Gd, 158 Gd, 160 Gd, 156 Dy、 158 Dy、 160 Dy、 162 Dy、 164 Dy、 162 Er、 164 Er、 166 Er、 168 Er、 170 Er、 168 Yb、 170 Yb、 172 Yb、 174 Yb、 176 Yb and / or actinides 232 Th、 234 Pa、 234 U、 238 U、 244 Isotopes of Pu. Certain possible materials, such as... 54 Fe and / or 56 Fe and / or 58 Some crystal structures of Fe isotopes may exhibit ferromagnetic properties or other disturbing collective magnetic effects that should generally be avoided. Preferably, a half-life of more than 10... 6 Stable isotopes with a nuclear magnetic moment. Of course, unstable isotopes without a nuclear magnetic moment can also be used. Therefore, the list above and the table below only include these preferred stable isotopes. The claimed technical teachings also include unstable magnetic isotopes without a nuclear magnetic moment.

[0020] For a mixture of natural isotopes, the proportion K of isotopes without magnetic moments 0G The ratio of isotopes with magnetic moments, K 1GThe following distribution relative to the total atomic amount of each element forms the basis for the natural isotopic distribution of each element in the claims:

[0021] List of the natural distribution of the proportion of isotopes without nuclear magnetic moment μ in the total isotopic content of elements.

[0022] When we refer to isotopes without a magnetic moment or without a nuclear magnetic moment μ in this paper, it means that the isotope essentially has a nuclear magnetic moment μ that is almost zero. Conversely, isotopes with a magnetic moment, or conceptually equivalent to a nuclear magnetic moment μ, have a non-zero nuclear magnetic moment. Thus, they can interact with and therefore couple with and / or become entangled with other isotopes that have nuclear magnetic moments.

[0023] Fourth Main Clan

[0024] For carbon (C):

[0025]

[0026] For silicon (Si):

[0027]

[0028] For germanium (Ge):

[0029]

[0030] For tin (Sn):

[0031]

[0032]

[0033] The VI Main Clan

[0034] For oxygen (O):

[0035]

[0036] For sulfur (S):

[0037]

[0038] Regarding selenium (Se):

[0039]

[0040] For tellurium (Te):

[0041]

[0042] Second Main Clan

[0043] For magnesium (Mg):

[0044]

[0045] For calcium (Ca):

[0046]

[0047] For strontium (Sr):

[0048]

[0049] For barium (Ba):

[0050]

[0051] Secondary clan

[0052] For titanium (Ti):

[0053]

[0054] For zirconium (Zr):

[0055]

[0056] For hafnium (Hf):

[0057]

[0058] Fourth Sub-Clan

[0059] For chromium (Cr):

[0060]

[0061] For molybdenum (Mo):

[0062]

[0063] For tungsten (W):

[0064]

[0065] VI Sub-family

[0066] For iron (Fe):

[0067]

[0068] For ruthenium (Ru):

[0069]

[0070] For osmium (Os):

[0071]

[0072] Subfamily VIII

[0073] For nickel (Ni):

[0074]

[0075] For palladium (Pd):

[0076]

[0077] For platinum (Pt):

[0078]

[0079]

[0080] Xth Sub-Clan

[0081] For zinc (Zn):

[0082]

[0083] Regarding cadmium (Cd):

[0084]

[0085] For mercury (Hg):

[0086]

[0087]

[0088] Lanthanides:

[0089] For cerium (Ce):

[0090]

[0091] For neodymium (Nd):

[0092]

[0093] For samarium (Sm):

[0094]

[0095]

[0096] For gadolinium (Gd):

[0097]

[0098] For dysprosium (Dy):

[0099]

[0100] For erbium (Er):

[0101]

[0102] For ytterbium (Yb):

[0103]

[0104] Actinide elements:

[0105] For thorium:

[0106]

[0107] For protactinium (Pa)

[0108]

[0109] For uranium (U):

[0110]

[0111] For plutonium (Pu):

[0112]

[0113] The structure of the exemplary substrate (D) according to this scheme

[0114] The substrate (D) therefore contains elements. The isotopes of these elements in the substrate (D) preferably do not possess nuclear magnetic moments μ, at least in certain regions. For example, if desired, if the substrate (D) is covered with a functional layer, for example, in the form of an epitaxial layer (DEPI) of the same material, the substrate (D) can have, for example, a natural composition of isotopes and isotopes thus possessing magnetic moments, such that the isotopes of these elements in the epitaxial layer (DEPI) at least locally substantially do not possess nuclear magnetic moments μ. Quantum dots (NVs) and nuclear quantum dots (CIs), as described below, are then fabricated in this epitaxial layer (DEPI), the thickness of which should be greater than the electron-electron coupling distance between two quantum dots (NVs) and greater than the nucleus-electron coupling distance between the quantum dots (NVs) and the nuclear quantum dots (CIs). The term "substantially" here refers to the total proportion K of the isotopes possessing magnetic moments of the elements that are part of the substrate (D) or the epitaxial layer (DEPI) relative to 100% of the total amount of that element that is part of the substrate (D). 1G Or the total proportion of K isotopes with magnetic moments of elements that are components of the substrate (D) or epitaxial layer (DEPI). 1G Compared to the total natural proportion K shown in the table above 1GThe ratio K1G' of isotopes of elements having magnetic moments that are reduced to the level of 100% of the elements that are components of the substrate (D) or epitaxial layer (DEPI). Therefore, in the regions where paramagnetic perturbations (NV) are used as quantum dots (NV) and / or nuclear spins are used as nuclear quantum dots (CI), this ratio K1G' is greater than the total natural ratio K of the individual elements used in the substrate (D) or epitaxial layer (DEPI). 1G Smaller by 50%, better by 20%, better by 10%, better by 5%, better by 2%, better by 1%, better by 0.5%, better by 0.1%.

[0115] The atoms of the nuclear quantum dots are not considered here because their magnetic moments are expected.

[0116] When silicon carbide is used as the substrate (D) or epitaxial layer (DEPI) material, it is preferred 28 V centers in a Si atom substrate. See the article "Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide" by D. Riedel, F. Fuchs, H. Kraus, S. Vath, A. Sperlich, V. Dyakonov, AASoltamova, PGBaranov, VAIlyin, GVAstakhov, et al., arXiv:1210.0505v1 [cond-mat.mtrl-sci] October 1, 2012. In the case of industrial diamond extracted from molten metal as a carbon solvent using a high-pressure process as the substrate (D), these substrates (D) typically still contain ferromagnetic impurities in the form of impurity atoms such as iron or nickel, especially those with strong magnetic moments. This parasitic magnetic field greatly affects the quantum dots (NVs) and renders them unusable. Therefore, when using paramagnetic impurities (NV1) in diamond, it is preferable to use those derived from... 12 Isotopically pure diamonds made from carbon atoms are those that also lack a magnetic moment. (The last sentence appears to be incomplete and possibly refers to a different topic: "Because of isotopic purity...") 28 Si silicon wafers or, for example 12Isotopic pure diamond, composed of carbon atoms with no magnetic moment, is extremely expensive. Therefore, it is reasonable to grow isotopically pure epitaxial layers (DEPIs) of the required material without nuclear magnetic moments on standard silicon wafers, standard SiC wafers, or industrial diamond surfaces. The authors have not yet investigated the thickness of this DEPI in detail. A few micrometers seems appropriate, but a few atomic layers may be sufficient due to the very small range of nuclear spin interactions. Therefore, the thickness of the epitaxial layer (DEPI) should be at least greater than the interaction range of the nuclear spins of the nuclear quantum dot (CI) and / or better, greater than twice and / or better, greater than five and / or better, greater than ten and / or better, greater than twenty and / or better, greater than fifty and / or better, greater than one hundred and / or better, using epitaxial layers (DEPI) of different thicknesses as part of rework to determine the optimal layer thickness for the intended application. Preferably, the epitaxial layer (DEPI) is an isotopically pure isotope with a nuclear magnetic moment or does not contain any isotope with a nuclear magnetic moment. This makes interactions between quantum dots at paramagnetic centers (NV1) and nuclear quantum dots (CI) with nuclear spins (on the one hand) and atoms on the substrate (D) near these quantum dots (NV) from the paramagnetic centers or nuclear quantum dots (CI) from nuclear spins (on the other hand) less likely to occur. This increases the coherence time of the quantum dots (NV) or nuclear quantum dots (CI). During the deposition of the epitaxial layer (DEPI), for example using a CVD process, impurity atoms can be selectively doped into the material of the epitaxial layer (DEPI) to achieve favorable positions for the Fermi level and increase the yield of quantum dots (NV) during fabrication. Preferably, this doping is performed with isotopes without magnetic moments or at a distance such that the magnetic moment μ of the nuclei of the doped atoms has essentially no effect on the quantum dots (NV) and / or nuclear quantum dots (CI). Preferably, the minimum distance (d) between the region of the substrate (D) doped with impurity atoms exhibiting nuclear magnetic moments μ and the associated quantum dots (NV) and / or nuclear quantum dots (CI) is... dotThe maximum interaction range (i.e., firstly, the interaction range of the magnetic moments between quantum dots (NVs) and / or between nuclear quantum dots (CIs) and / or between nuclear quantum dots) is at least greater than the range of magnetic moments between quantum dots (NVs) and / or between nuclear quantum dots (CIs). The maximum interaction range mentioned here (i.e., firstly, the interaction range of the magnetic moments between quantum dots (NVs) and / or between nuclear quantum dots (CIs) and / or between nuclear quantum dots (NVs) and quantum dots (NVs)) thus determines the spacing (d) between the region of the substrate (D) doped with impurity atoms having a nuclear magnetic moment μ (on the one hand) and the associated quantum dots (NVs) and / or nuclear quantum dots (CIs) (on the other hand). dot The minimum distance (d) dotmin The distance (d) is at least greater than the interaction range of the magnetic moments between quantum dots (NVs) and / or between nuclear quantum dots (CIs) and / or between quantum dots. This will be explained later. Preferably, this distance (d) dot ) greater than the minimum distance (d) dotmin ) and / or better than the minimum distance (d) dotmin twice and / or better than the minimum distance (d) dotmin Five times and / or better than the minimum distance (d) dotmin ) ten times and / or better than the minimum distance (d) dotmin ) twenty times and / or better than the minimum distance (d) dotmin ) fifty times and / or better than the minimum distance (d) dotmin ) one hundred times and / or better than the minimum distance (d) dotmin Two hundred times and / or better than the minimum distance (d) dotmin Five hundred times greater. However, if the distance is too large, the Fermi level at the position of the quantum dot (NV) and / or the position of the nuclear quantum dot (CI) will no longer be affected. For specific constructive cases, it is recommended to use experimental design (statistical experimental design) to obtain good results. In the exposition of this invention, it has been demonstrated that regions of the quantum dot (NV) and / or nuclear quantum dot are doped with impurity atoms without magnetic moments, and contact doping or contact implantation is performed at a large distance from the quantum dot (NV) and / or nuclear quantum dot (CI), as long as these contacts are not placed between two coupled quantum dots (NV1, NV2). For example, in 12 In the case of C diamond, doping is performed near the NV center, which is a quantum dot (NV). 32 S sulfur isotopes are particularly beneficial.

[0117] Quantum bits in the sense of this invention

[0118] The quantum bits (QUBs) according to this disclosure include at least one quantum dot (NV) of a quantum dot type. The quantum dot type determines what kind of quantum dot it is. For example, a G center in this sense is a different type of quantum dot than a SiV center. Preferably, the quantum dot (NV) is a paramagnetic center, preferably in a single crystal of preferably magnetically neutral atoms. Very preferably, it is an impurity center in a crystal serving as a substrate (D). Due to its nonmagnetic nature, silicon crystal, silicon carbide crystal, or diamond crystal is preferred as the material of the substrate (D), which is further preferably isotopically pure in at least the region of the quantum dot (NV) or the region of the nuclear quantum dot (CI), respectively lacking the magnetic nuclear momentum of the isotope of the material of the substrate (D). Although the emphasis here is on NV centers in diamond, G centers in silicon, or V centers in silicon carbide, other combinations of impurity centers, crystals, and materials are also included if appropriate. Crystals and materials suitable as substrate (D) and / or epitaxial layer (DEPI) materials are characterized by the fact that, for such undesirable isotopes, they are substantially free of isotopes with nuclear magnetic moments μ other than zero, at least in the regions of quantum dots (NV) and / or nuclear quantum dots (CI) within their materials. Preferably, for example, the diamond crystal in the relevant regions of the quantum dots (NV) and / or nuclear quantum dots (CI) is composed of... 12 Composed of carbon isotopes (C). Preferably, for example, the silicon crystal in the relevant region of the quantum dot (NV) and / or nuclear quantum dot (CI) is made of... 28 Composed of silicon isotopes. Preferably, for example, the silicon carbide crystal in the relevant region of the quantum dot (NV) and / or nuclear quantum dot (CI) is made of silicon isotopes. 12 C carbon isotopes and 28 The silicon isotope composition, and thus the preferred isotopic formulas representing stoichiometry. 28 Si 12 C. Preferably, there are no other interferences in the quantum dot (NV) region, whether considering diamond crystal, silicon crystal, or silicon carbide crystal. In the case of diamond crystal as the substrate (D), the quantum dot is preferably an NV center (NV). In the case of silicon crystal, the quantum dot is preferably a G center (NV). In the case of silicon carbide crystal, the quantum dot is preferably a V center (NV). Other centers, such as SiV centers and / or ST1 centers, or other suitable paramagnetic impurities, can also be used as quantum dots (NV) in diamond. Centers other than G centers and suitable paramagnetic interference sites in silicon can also be used as quantum dots (NV) in silicon. Centers other than V centers and suitable paramagnetic interference sites in silicon carbide can also be used as quantum dots (NV) in silicon carbide. If silicon is used as the substrate (D), for example, phosphorus atoms can also be considered as quantum dots (NV).

[0119] After all, in order to use a less suitable material as the substrate (D), such as a standard silicon wafer typically used for CMOS wafer production with silicon atoms having magnetic momentum, the epitaxial layer (DEPI) is preferably, but not necessarily, deposited on the substrate (D) by means of, for example, CVD deposition. Preferably, the epitaxial layer (DEPI) is isotopically pure and / or free of isotopes having magnetic momentum, excluding isotopes that form nuclear quantum dots (CI), which will be discussed later. Preferably, in the case of silicon crystal as the substrate (D), the epitaxial layer (DEPI) is isotopically pure and / or free of nuclear magnetic momentum, for example, made of, silicon crystal. 28 It is made of silicon isotopes. Preferably, when diamond crystal is used as the substrate (D), the epitaxial layer (DEPI) is isotopically pure and / or free of nuclear magnetic momentum, for example, made of silicon isotopes. 12 It is made of carbon isotopes (C). Preferably, when silicon carbide crystal is used as the substrate (D), the epitaxial layer (DEPI) is isotopically pure and / or free of nuclear magnetic momentum, for example, made of... 28 Si silicon isotopes and 12 Made from carbon isotopes.

[0120] Devices for manipulating quantum dots

[0121] The decisive factor now is the suitability for generating circularly polarized electromagnetic radiation fields, especially circularly polarized microwave fields (B) at the location of quantum dots (NVs). MW This paper presents a combination of devices. In the prior art, macroscopic coils are commonly used for this purpose. The advantage of this technique is that the field of the Helmholtz coil can be calculated very well and that the field is very uniform. However, a disadvantage of this technique is that the circularly polarized electromagnetic field affects multiple quantum dots (NVs), which are typically very close together compared to the wavelength of the circularly polarized wave field. In the prior art, these devices, which are commonly used to irradiate the quantum dots with microwave radiation, usually affect all the quantum dots of the device equally in the same way. The scheme proposed in this paper avoids this situation. Here, the quantum dots are placed in the near field of one or more electrical lines (LH, LV).

[0122] Such a device, such as Figure 1 As shown.

[0123] If present, the substrate (D) and / or epitaxial layer (DEPI) have a surface (OF). For the purposes of this disclosure, the leads (LH, LV) and their insulating layer (IS) are typically located above the surface (OF).

[0124] As described herein, if present, the quantum dot (NV) is preferably placed as a paramagnetic center (NV) in the substrate (D) and / or epitaxial layer (DEPI). Preferably, the substrate (D) is diamond, and the quantum dot (NV) is an NV center, an ST1 center, or an L2 center, or preferably silicon, and the quantum dot (NV) is a G center or preferably silicon carbide, and the quantum dot (NV) is a V center.

[0125] To explain the geometry, it is necessary to be able to precisely describe the distance (d1) between the quantum dot (NV) and the surface (OF), as well as the device located at that distance for manipulating and entanglement of the quantum dot (NV) with other quantum objects.

[0126] To this end, an imaginary vertical line (LOT), if present, is introduced along an imaginary vertical line from the location of the quantum dot (NV) to the surface (OF) of the substrate (D) and / or the surface (OF) of the epitaxial layer (DEPI), along which deposition can occur. The imaginary vertical line (LOT) then virtually crosses the surface (OF) of the substrate (D) and / or the epitaxial layer (DEPI) at the point of perpendicularity (LOTP) (if present).

[0127] Suitable for generating circularly polarized electromagnetic wave fields, especially circularly polarized microwave fields (B). MW The device is preferably located on the surface of the substrate (D) and / or the epitaxial layer (DEPI), if present, and particularly near or at the LOTP. Here, "near" means that the device is placed close to the quantum dot (NV) so that it can influence the quantum dot (NV) as intended, making quantum mechanical operation possible within a finite time, thus enabling sufficient operation to be performed before coherence fails. Then, preferably, the device is located directly above the quantum dot (NV) at the LOTP on the surface (OF).

[0128] The second characteristic now relates to suitability for generating circularly polarized electromagnetic wave fields, particularly circularly polarized microwave fields (B). MW Specific embodiments of the device are described below. The device is proposed to be implemented in the form of horizontal lines (LH) and vertical lines (LV). Here, the terms "horizontal" and "vertical" should be understood as part of certain terminology. The horizontal and vertical flows associated with these lines will be described later.

[0129] Since the horizontal line (LH) and vertical line (LV) constitute the device, they are now located on the surface (OF) of the substrate (D) and / or the surface (OF) of the epitaxial layer (DEPI) (if present). The horizontal line (LH) and vertical line (LV) intersect near or at the point of intersection (LOTP) with a non-zero crossing angle (α). Preferably, the crossing angle (α) is a right angle of 90° or π / 2. The horizontal line (LH) and vertical line (LV) preferably have a 45° angle relative to the axis of the quantum dot (NV) to add the magnetic field lines of the horizontal line and vertical line (LV).

[0130] Example of crystal orientation on substrate (D)

[0131] When using diamond as the substrate (D) and NV centers as quantum dots (NV), (111), (100), or (113) diamond is preferred. The NV center is tilted at 53° relative to the normal direction of these crystal surfaces.

[0132] When using silicon as the substrate (D) and G centers as quantum dots (NV), it is preferable to use (111), (100), or (113) silicon crystals. For the normal direction of these crystal surfaces, the direction of the G centers is tilted at an angle.

[0133] When using silicon carbide as the substrate (D) and V-centers as quantum dots (NV), it is preferable to use (111), (100), or (113) silicon carbide crystals. For the normal direction of these crystal surfaces, the direction of the V-centers is tilted at an angle.

[0134] Lead insulation

[0135] For example, it is useful for the horizontal line (LH) to be electrically insulated from the vertical line (LV) by means of electrical insulation. Preferably, the horizontal line (LH) is electrically insulated from the vertical line (LV) by means of electrical insulation (IS). Furthermore, it is useful for the horizontal line (LH) to be electrically insulated from the substrate (D) by means of yet another insulation. Therefore, it is also generally useful for the vertical line (LV) to be electrically insulated from the substrate (D) by means of yet another insulation. In this case, preferably, the two insulations can also preferably achieve the insulation function of one of the three insulations mentioned above.

[0136] Back contact

[0137] Preferably, the substrate (D) is electrically connected to an optional back contact (BSC) having a defined potential. The back contact (BSC) is preferably located on a surface of the substrate (D) opposite to the surface (OF) having horizontal lines (LH) and vertical lines (LV). The photocurrent (If) mentioned below is transmitted via the back contact (BSC). phThe readings can be taken alternately or in parallel with the contacts of the shielded wires (SH1, SH2, SH3, SH4, SV1, SV2) mentioned below, and can be provided for evaluation by the control device (μC) mentioned below and the measuring device assigned to it.

[0138] Green light as excitation radiation

[0139] In the operation described below, "green light" is used to reset the quantum dots (NVs). The term "green light" should be understood functionally herein. If other impurity centers besides those in diamond, such as G centers in silicon or V centers in silicon carbide, are used, other wavelengths of light or electromagnetic radiation can be used, but this is also referred to as "green light" herein. For this green light to reach the quantum dots (NVs), the structure of the horizontal lines (LH) and vertical lines (LV) should allow the green light to pass through in the direction of each quantum dot (NV). Alternatively, it is conceivable to supply the "green light" from the back side of the substrate (D), so that the "green light" does not have to pass through the horizontal lines (LH) and vertical lines (LV).

[0140] A table of ZPL wavelengths and exemplary wavelengths of excitation radiation.

[0141] This table is merely an exemplary compilation of some possible paramagnetic centers. Functional equivalent uses of other paramagnetic centers in other materials are obviously possible. The wavelength of the excitation radiation is also exemplary. Other wavelengths can generally be used if they are shorter than the wavelength of the ZPL to be excited.

[0142]

[0143]

[0144] The table above lists the references.

[0145] / 1 / Marina Radulaski, Matthias Widmann, Matthias Niethammer, JingyuanLinda Zhang, Sang-Yun Lee, Torsten Rendler, Konstantinos G.Lagoudakis, NguyenTien Son, Erik Janzén, Takeshi Ohshima, Wrachtrup, Jelena “Scalable Quantum Photonics with Single Color Centers in Silicon Carbide”, Nano Letters 17(3), 1782-1786 (2017), DOI: 10.1021 / acs.nanolett.6.b05102, arXiv:1612.02874

[0146] / 2 / C.Wang, C.Kurtsiefer, H.Weinfurter and B.Burchard, “Single photonemission from SiV centers in diamond produced by ion implantation” J. Phys. B: At. Mol. Opt. Phys., 39(37), 2006

[0147] / 3 / Tegetmeyer, PhD dissertation, “Luminescence properties of SiV-centers indiamond diodes”, University of Freiburg, January 30, 2018.

[0148] / 4 / Carlo Bradac, Weibo Gao, Jacopo Forneris, Matt Trusheim, Igor Aharonovich, “Quantum Nanophotonics with Group IV defects in Diamond”, DOI: 10.1038 / s41467-020-14316-x, arXiv:1906.10992

[0149] / 5 / Rasmus Jensen, Erika Janitz, Yannik Fontana, Yi He, Olivier Gobron, Ilya P. Radko, Mihir Bhaskar, Ruffin Evans, Cesar Daniel Rodríguez Rosenblueth, Lilian Childress, Alexander Huck, Ulrik Lund Andersen, “Cavity-Enhanced Photon Emission from a Single Germanium-Vacancy Center in a Diamond Membrane”, arXiv:1912.05247v3 [quant-ph] May 25, 2020

[0150] / 6 / Takayuki Iwasaki, Yoshiyuki Miyamoto, Takashi Taniguchi, Petr Siyushev, Mathias H. Metsch, Fedor Jelezko, Mutsuko Hatano, “Tin-Vacancy Quantum Emitters in Diamond”, Phys. Rev. Lett. 119, 253601 (2017), DOI: 10.1103 / PhysRevLett.119.253601, arXiv:1708.03576 [quant-ph].

[0151] / 7 / Matthew E. Trusheim, Noel H. Wan, Kevin C. Chen, Christopher J. Ciccarino, Ravishankar Sundararaman, Girish Malladi, Eric Bersin, Michael Walsh, Benjamin Lienhard, Hassaram Bakhru, Prineha Narang, Dirk Englund, “Lead-Related Quantum Emitters in Diamond” Phys. Rev. B99, 075430 (2019), DOI: 10.1103 / PhysRevB.99.075430, arXiv:1805.12202[quant-ph]

[0152] / 8 / M. Hollenbach, Y. Berencén, U. Kentsch, M. Helm, G. V. Astakhov “Engineering telecom single-photon emitters in silicon for scalable quantum photonics” Opt. Express 28, 26111 (2020), DOI: 10.1364 / OE.397377, arXiv:2008.09425 [physics.app-ph]

[0153] / 9 / Castelletto and Alberto Boretti, “Silicon carbide color centers for quantum applications”, January 2020. Phys. Photonics 2022001

[0154] / 10 / V. Ivády, J. Davidsson, NTSon, T. Ohshima, IAAbrikosov, A. Gali, “Identification of Si-vacancy related room-temperature qubits in 4H siliconcarbide”, Phys. Rev. B, 2017, 96, 161114

[0155] / 11 / J. Davidsson, V. Ivády, R. Armiento, NTSon, A. Gali, IAAbrikosov, “First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H-SiC”, New J. Phys., 2018, 20, 023035

[0156] / 12 / J. Davidsson, V. Ivády, R. Armiento, T. Ohshima, NTSon, A. Gali, IAAbrikosov “Identification of divacancy and silicon vacancy qubits in 6H-SiC”, Appl. Opt. Phys. Lett. 2019, 114, 112107

[0157] / 13 / SAZargaleh, S. Hameau, B. Eble, F. Margaillan, H.J. von Bard eleben, J.L. Antin, W. Gao, “Nitrogen vacancy center in cubic silicon carbide: a promising qubit in the 1.5 μm spectral range for photonic quantum networks” Phys. Rev. B, 2018, 98, 165203

[0158] / 14 / SAZargaleh et al., “Evidence for near-infrared photoluminescence of nitrogen vacancy centers in 4H-SiC”, Phys. Rev. B, 2016, 94, 060102

[0159] Control line transparency

[0160] Another simple option is the horizontal (LH) and / or vertical (LV) lines, which are transparent to "green light". For this purpose, the horizontal (LH) and / or vertical (LV) lines preferably comprise conductive materials that are optically transparent to green light. In particular, indium tin oxide (commonly abbreviated ITO) is recommended. It is important here that the distance between the quantum dot (NV) or nuclear quantum dot (CI), described later, and the lead (LH, LV) material is greater than the maximum interaction distance between the nuclear magnetic momentum of the isotope of the lead (LH, LV) material and the quantum dot (NV). In fact, unfortunately, neither indium (IN) nor tin (Sn) has naturally stable isotopes without a nuclear magnetic moment. For example, it can be... 28 Si isotopes and 16A sufficiently thick layer of silicon dioxide containing O isotopes is used to establish a suitable distance, serving as insulation between the leads (LH, LV) on one side and the substrate (D) on the other side, whose nuclei have no nuclear magnetic moment.

[0161] Furthermore, it is conceivable that horizontal lines (LH) and / or vertical lines (LV) are formed when the temperature is below the critical temperature (i.e., the transition temperature (T)). c When a material becomes superconducting, it is typically made of opaque material. To allow light to pass through, an opening can be placed in the horizontal (LH) and / or vertical (LV) lines instead of using ITO. However, this is only possible within a very limited scope due to the small size. It is also conceivable to fabricate the horizontal (LH) and / or vertical (LV) lines as segmental combinations of multiple parallel guide lines. When using superconductors to fabricate the horizontal (LH) and / or vertical (LV) lines, the introduction of the opening and / or the parallel wiring of the multiple lines is important, especially to prevent so-called pinning. This is used to prevent the freezing of magnetic flux quanta, thereby enabling complete magnetic resetting.

[0162] As previously mentioned, the proposed qubit (QUB) has a surface (OF) with horizontal lines (LH) and vertical lines (LV). Similarly, the proposed qubit (QUB) has a bottom surface (US) opposite to the surface (OF). Another method to guarantee the light transmission to the quantum dot (NV) of the qubit (QUB) is to mount the qubit (QUB) such that "green light" can illuminate the bottom surface (US) of the qubit (QUB) in a manner that allows it to reach and affect the quantum dot (NV). For this purpose, the transparency of the substrate (D) material to the pump radiation wavelength of the "green light" is, of course, a prerequisite. If necessary, the substrate (D) must be at least locally thinned, for example by polishing and / or wet chemical etching and / or plasma etching, such that the total attenuation of "green light" entering the quantum dot (NV) from the surface opposite to the surface (OF) is sufficiently low.

[0163] In the examples discussed herein, diamond and silicon, as well as silicon carbide substrates (D), are preferred as three examples, which has established a preferred category of quantum dot types. Furthermore, it is assumed that the quantum dot (NV) is preferably a paramagnetic center (NV). It is also assumed that, according to a particular example, the substrate (D) comprises diamond, silicon, or silicon carbide, and that in the case of exemplary diamond, the quantum dot (NV) is an exemplary NV center, or in the case of exemplary silicon, it is an exemplary G center, or in the case of exemplary silicon carbide, it is an exemplary V center. However, the invention is not limited to these three examples. Throughout this document, the same reference numeral (NV) for superset quantum dots (NV) is always used for the terms quantum dot (NV), paramagnetic center (NV), and NV center (NV), G center, or V center, respectively. As mentioned above, other substrates (D) made of other materials having other paramagnetic centers can be used, which in turn defines other quantum object types. Furthermore, other impurity centers in silicon, silicon carbide, or diamond can be used, which in turn defines other quantum object types. Then, it may be necessary to adjust the wavelength and frequency. Here, as an example, a system having NV centers in diamond is preferably described as representative of other possible combinations of a substrate (D) or epitaxial layer (DEPI) material on one side and paramagnetic impurities in these materials on the other side.

[0164] Therefore, alternatively, it is conceivable that the substrate (D) comprises silicon and the quantum dot (NV) is a G center or other suitable impurity center.

[0165] Therefore, alternatively, it is conceivable that the substrate (D) comprises silicon carbide and the quantum dots (NV) are V centers or other suitable impurity centers.

[0166] Therefore, alternatively, it is conceivable that the substrate (D) comprises diamond and the quantum dots (NV) are SiV centers, ST1 centers, L2 centers, or other suitable impurity centers.

[0167] Generally, other impurity centers and impurities, as well as lattice defects in diamond, are also considered. Various results indicate that if the substrate (D) comprises diamond, the quantum dots (NVs) should preferably include vacancies. Therefore, the quantum dots (NVs) in the diamond, which serves as an exemplary substrate (D), should include, for example, Si atoms or Ge atoms or N atoms or P atoms or As atoms or Sb atoms or Bi atoms or Sn atoms or Mn atoms or F atoms, or other atoms that generate impurity centers with paramagnetic behavior in the exemplary diamond.

[0168] Therefore, the quantum dots (NVs) in silicon, which serves as the substrate (D), should have impurity centers exhibiting paramagnetic behavior, such as Si atoms at interstitial sites and / or C atoms at interstitial sites, or atoms that substitute for silicon atoms, in the exemplary silicon crystal. See the paper D.D. Berhanuddin, “Generation and characterization of the carbon G-center in silicon,” PhD dissertation, URN: 1456601S, University of Surrey, March 2015.

[0169] Therefore, for example, quantum dots (NV) in silicon carbide as the substrate (D) should have V Si The center or other impurity center with paramagnetic behavior.

[0170] In the latter part of this disclosure, the nuclear quantum bit (CQUB) will be further explained using the nuclear quantum dot (CI).

[0171] In the case of using NV centers in diamond as quantum dots (NV), in order to fabricate these nuclear qubits (CQUBs) with nuclear quantum dots (CI) and NV centers (NV) in diamond as the substrate (D), if the quantum dots (NV) in question are having 15 N isotopes are nitrogen atoms or have 14 The nitrogen isotope is useful as the NV center of the nitrogen atom. In this case, it is particularly preferred to use... 15 Nitrogen isotope. Alternatively, one could consider using pure isotopes. 12 C diamond, and one or more 13 Carbon isotopes are implanted, deposited, or placed near the quantum dot (NV), i.e., within effective range. Most preferably, these... 13 Ten to one hundred carbon isotopes are placed at this location. "Nearby" here is understood to mean one or more. 13 The magnetic field of the nuclear spin of a carbon atom can affect the spin of the electronic configuration of a quantum dot (NV), and the spin of the electronic configuration of a quantum dot (NV) can affect these... 13 One or more nuclear spins in carbon isotopes. This makes it possible to have a nuclear electron quantum register (CEQUEREG) in diamond.

[0172] In the case of using G centers in silicon as quantum dots (NVs), in order to fabricate these nuclear qubits (CQUBs) having nuclear quantum dots (CIs) and G centers (NVs) in silicon as a substrate (D), if the quantum dot (NV) in question has one or more carbon atoms in the influence region of the G center as the quantum dot (NV).13 C isotopes and / or having silicon atoms 29 The G center of the Si isotope is useful. It is particularly preferred for use. 13 C isotopes. One could also consider using isotopic pure... 28 Si wafers or epitaxial isotope-pure silicon wafers 28 Si(DEPI) layer, and one or more 29 Silicon isotopes are implanted, deposited, or placed near quantum dots (NVs), i.e., within the influence region. These are particularly preferred. 29 10-100 of the Si isotopes are placed at this location. "Nearby" here is understood to mean one or more. 29 The magnetic field of the nuclear spin of Si atoms can affect the spin of the electronic configuration of quantum dots (NVs), and the spin of the electronic configuration of quantum dots (NVs) can affect these... 29 One or more nuclear spins in Si isotopes. Therefore, a nuclear electron quantum register (CEQUEREG) in silicon becomes possible.

[0173] In the case of using V centers in silicon carbide as quantum dots (NVs), in order to fabricate these nuclear qubits (CQUBs) having nuclear quantum dots (CIs) and V centers (NVs) in silicon carbide as the substrate (D), if the quantum dot (NV) in question has one or more carbon atoms in the active region of the V centers, which are silicon atoms. 13 C isotopes and / or having one or more silicon atoms 29 The V center of the Si isotope is useful. It is particularly preferred for use. 13 C isotopes and / or 29 Si isotopes. Another option is to use isotopic pure... 28 Si 12 C silicon carbide wafers or epitaxial isotope-pure silicon carbide wafers 28 Si 12 C(DEPI) layer, and one or more 29 Si silicon isotopes and / or 13 Carbon isotopes are implanted, deposited, or placed near the quantum dot (NV), i.e., in the region of action. Most preferably, these... 29 Si silicon isotopes and / or 13 Ten to one hundred carbon isotopes are placed at this location. "Nearby" here is understood to mean one or more. 29 Si atoms and / or 13 The magnetic field of the nuclear spin of a carbon atom can affect the spin of the electronic configuration of a quantum dot (NV), and the spin of the electronic configuration of a quantum dot (NV) can affect these... 29 Si silicon isotopes and / or 13One or more nuclear spins in carbon isotopes. Therefore, nuclear electron quantum registers (CEQUEREGs) in silicon carbide become possible. See here the paper "Silicon carbide color centers for quantum applications" by Stefania Castelletto and Alberto Boretti, January 2020, Phys. Photonics 2022 2001, which mentions other possible impurity centers. If other elements are used to create impurity centers, nuclear quantum dots can be created in a similar manner using isotopes of these elements with magnetic moments.

[0174] More generally, this can therefore be defined as diamond-based qubits (QUBs), wherein the quantum dot type of the qubit (QUB) is characterized by the following: the substrate (D) comprises a diamond material, and one or more isotopes with nuclear spin are located in the vicinity of the quantum dot (NV). Here, "vicinity" will again be understood as such that a magnetic field of the nuclear spin of one or more isotopes can influence the spin of the electronic configuration of the quantum dot (NV), and the spin of the electronic configuration of the quantum dot (NV) can influence the nuclear spin of one or more of these isotopes.

[0175] Therefore, in a very general and similar manner, silicon-based qubits (QUBs) can be defined, wherein the quantum dot type of the qubit (QUB) is characterized by the following: the substrate (D) comprises silicon material, and one or more isotopes with nuclear spin are located in the vicinity of the quantum dot (NV). Here, "vicinity" will again be understood as such that the nuclear spin magnetic field of one or more isotopes can influence the spin of the electronic configuration of the quantum dot (NV), and the spin of the electronic configuration of the quantum dot (NV) can influence the nuclear spin of one or more of these isotopes.

[0176] Similarly, silicon carbide-based qubits (QUBs) can thus be defined in a similar manner, wherein the quantum dot type of the qubit (QUB) is characterized by the following: the substrate (D) comprises silicon carbide material, and one or more isotopes with nuclear spin are located in the vicinity of the quantum dot (NV). Here, "vicinity" is again understood to mean that the magnetic field of the nuclear spin of one or more isotopes can affect the spin of the electronic configuration of the quantum dot (NV), and the spin of the electronic configuration of the quantum dot (NV) can affect the nuclear spin of one or more of these isotopes.

[0177] Because isotopic pure diamond is very expensive, if the quantum dot (NV) type of quantum bit (QUB) is characterized by the substrate (D) comprising diamond material and the diamond material comprising essentially... 12Epitaxially grown isotope-pure layers (DEPI) composed of C isotopes are useful. These can be deposited, for example, on the original surface of a silicon wafer used as a substrate (D) via CVD and other deposition methods. In this case, it essentially means that the total natural proportion K will be compared to the total natural proportion shown in the table above. 1G The total proportion of C isotopes with magnetic moments as part of the substrate (D) based on 100% C atoms as part of the substrate (D). 1G 'Reduced to a proportion of the total natural population K given in the table above' 1G The proportion of C isotopes with magnetic moments as part of the substrate (D) based on 100% C isotopes as part of the substrate (D). 1G Therefore, preferably, in the region of action of the paramagnetic impurity (NV) used as a quantum dot (NV) and / or the nuclear spin used as a nuclear quantum dot (CI), the ratio K1G' is the natural total ratio K of the C isotopes having magnetic moments on the C isotopes used as the substrate (D). 1G Compared to less than 50%, better than less than 20%, better than less than 10%, better than less than 5%, better than less than 2%, better than less than 1%, better than less than 0.5%, better than less than 0.2%, better than less than 0.1%. When determining the proportion K1G', C atoms with magnetic moments in nuclear quantum dots (CI) are not considered, because their magnetic moments are intentional rather than parasitic.

[0178] Because isotopic pure silicon wafers are very expensive, if the quantum dot (NV) type of quantum bit (QUB) is characterized by a substrate (D) comprising silicon material and the silicon material comprising essentially... 28 Epitaxial growth of Si isotope-pure layers (DEPI) is useful. These can be deposited, for example, by CVD and other deposition methods onto the original surface of a silicon wafer used as the substrate (D). Here, it essentially means that the total natural proportion K will be compared to the total natural proportion indicated in the table above. 1G The proportion of Si isotopes with magnetic moments that are part of the substrate (D) relative to the total number of Si atoms that are part of the substrate (D), K. 1G 'Reduced to a proportion of the total natural population K shown in the table above.' 1G The ratio of Si isotopes with magnetic moments that are part of the substrate (D) to 100% of the Si isotopes that are part of the substrate (D), K. 1G Therefore, preferably, in the regions where the paramagnetic impurity (NV) serves as a quantum dot (NV) and / or the nuclear spin serves as a nuclear quantum dot (CI), the ratio K1G' is proportional to the natural total ratio K of the Si isotopes with magnetic moments on the Si isotopes in the substrate (D). 1GCompared to less than 50%, better than less than 20%, better than less than 10%, better than less than 5%, better than less than 2%, better than less than 1%, better than less than 0.5%, better than less than 0.2%, better than less than 0.1%. When determining the proportion K1G', Si atoms with magnetic moments in nuclear quantum dots (CI) are not considered because their magnetic moments are intentional rather than parasitic.

[0179] Since isotopically pure silicon carbide wafers are also very expensive, if the quantum dot (NV) type of quantum bits (QUB) in a silicon carbide substrate (D) is characterized by the substrate (D) comprising silicon carbide material and the silicon carbide material comprising essentially... 28 Si isotopes and 12 Epitaxial growth of isotopically pure layers (DEPI) using C isotopes is useful. This can be deposited, for example, on the original surface of a silicon carbide wafer used as the substrate (D) via CVD and other deposition methods. Essentially, this means that compared to the total natural proportion K indicated in the table above, this is also useful. 1G The total ratio of Si isotopes with magnetic moments and C isotopes with magnetic moments, which are part of the substrate (D), is based on the total proportion of 100% Si atoms and 100% C atoms as part of the substrate (D). 1G The ratio K of Si isotopes and C isotopes with magnetic moments that are both part of the substrate (D) to 100% of the Si isotopes and 100% of the C isotopes that are part of the substrate (D). 1G Preferably, this ratio K1G' is the total natural ratio K of the Si isotopes with magnetic moments associated with the Si isotopes of the substrate (D) in the region of action of the paramagnetic perturbation (NV) used as a quantum dot (NV) and / or the nuclear spin used as a nuclear quantum dot (CI) and the C isotopes with magnetic moments associated with the C isotopes of the substrate (D) in the region of action of the paramagnetic perturbation (NV) used as a quantum dot (NV) and / or the nuclear spin used as a nuclear quantum dot (CI). 1G Compared to less than 50%, better less than 20%, better less than 10%, better less than 5%, better less than 2%, better less than 1%, better less than 0.5%, better less than 0.2%, better less than 0.1%. When determining the proportion K1G', Si atoms with magnetic moments in nuclear quantum dots (CI) or C atoms with magnetic moments in nuclear quantum dots (CI) are not considered, because their magnetic moments ultimately require nuclear quantum dot (CI) shaping and are therefore intentional rather than parasitic.

[0180] For the NV center (NV) to function properly in diamond, which serves as the substrate (D), it is crucial that the substrate (D), i.e., diamond, is n-type doped near the NV center (NV) so that the NV center is most likely to be in a negatively charged state, as it traps excess electrons. This understanding is one of the most important factors ensuring the manufacturability of the scheme proposed in this paper. Regardless of the substrate and paramagnetic center (NV) used, or the type of quantum dot used as the quantum dot (NV), the dopant used should have no nuclear spin or only negligible nuclear spin to avoid interfering with the quantum dot (NV). For the NV center in diamond, it is recommended to use a dopant without nuclear spin, especially one with... 32 Doping in regions of quantum dots (NVs) with the S isotope is preferred because these have proven their value. Generally, isotopes without nuclear spin should be used for doping in regions of quantum dots (NVs). The term "region" should be understood herein as an interaction region for direct or indirect interaction. Direct interaction occurs directly between one quantum object—e.g., one quantum dot—and another quantum object—e.g., another quantum dot. Indirect interaction occurs with the aid of at least one additional quantum object—e.g., a third quantum dot. For this, see the explanation of "quantum bus" described later below. Preferably, if present, the quantum dot (NV) is located at a more or less predetermined first distance (d1) along a virtual vertical line (LOT) below the surface (OF) of the substrate (D) and / or epitaxial layer (DEPI). Preferably, this first distance (d1) is 2 nm to 60 nm and / or more preferably 5 nm to 30 nm and / or 10 nm to 20 nm, with a particularly preferred first distance (d1) of 5 nm to 30 nm.

[0181] In the semiconductor industry, dopants B, Al, Ga, and In are primarily used for various purposes to create p-type doping in silicon (D) substrates. Boron, aluminum, gallium, and indium are isotopes without a sufficiently long lifetime and nuclear magnetic moment. In the semiconductor industry, dopants P, As, Sb, Bi, and Li are primarily used for various purposes to create n-type doping in silicon (D) substrates. Phosphorus, arsenic, antimony, bismuth, and lithium are also isotopes without a sufficiently long lifetime and nuclear magnetic moment. Therefore, doping without introducing parasitic magnetic momentum is a key objective. 28 The Si silicon substrate (D) is a serious problem.

[0182] Furthermore, for G centers in silicon, n-type doping in the quantum dot (NV) region is possible without nuclear spin and, in particular, with stable isotopes of Group 6. For example, 120 Te isotopes and / or 122 Te isotopes and / or 124 Te isotopes and / or 126 Te isotopes and / or 128Te isotopes and / or 130 Te isotopes do not exhibit nuclear magnetic moments. Tellurium is a donor in silicon at a distance of 0.14 eV from the conduction band edge. Titanium isotopes 46 Ti、 48 Ti、 50 Ti also tends to appear at a distance of 0.21 eV from the edge of the conduction band in silicon. It is a carbon isotope that is, in any case, part of the G center. 12 C and 14 C can be considered another donor. Furthermore, Se isotopes... 74 Se、 76 Se、 78 Se、 80 Se can be considered a donor with an activation energy of 0.25 eV. Similarly, Ba isotopes at a distance of 0.32 eV from the conduction band edge... 130 Ba、 132 Ba、 134 Ba、 136 Ba、 138 Ba is also possible. Therefore, barium isotopes... 130 Ba has a half-life of 1.6 × 10²¹ years, and is therefore technically as stable as the other Ba isotopes mentioned. Sulfur isotopes 32 S, 34 S and 36 S also fits an energy distance of 0.26 eV from the top edge of the valence band. Stable isotopes such as antimony... 121 Sb and 123 Stable isotopes of Sb and phosphorus 31 P, and stable isotopes of arsenic 75 As, and stable isotopes of bismuth 209 Two stable isotopes of Bi and tellurium 123 Te and 125Other common stable isotopes of n-type dopants in silicon, such as Te, exhibit nuclear magnetic moments and are therefore not applicable to altering the Fermi level near quantum dots (NV) or nuclear quantum dots (CI). However, they can be considered potential nuclear quantum dots (CI), which will be explained later. If the silicon substrate (D) is doped as part of a CMOS process, a distance should be maintained between the silicon substrate (D) doped with standard dopants of Group III and V silicon-based semiconductor technologies and the regions of quantum dots (NV) or nuclear quantum dots (CI). This excludes any destructive parasitic coupling between the magnetomotive force of the doped atoms and the quantum dots (NV) and / or nuclear quantum dots (CI). Such standard dopants used for doping silicon include B, Al, Ga, In, P, As, Sb, Bi, and Li. It has been shown that a distance of several μm between the quantum dots (NV) or nuclear quantum dots (CI) on one hand and the silicon regions doped with these standard dopants on the other hand is sufficient, taking into account outward diffusion in CMOS processes. If necessary, Design of Experiments (DoE) experiments are recommended to minimize the gap according to the semiconductor technology used and the application requirements. Therefore, 120 Te、 122 Te、 124 Te、 126 Te、 128 Te、 130 Te、 46 Ti、 48 Ti、 50 Ti、 12 C 14 C 74 Se、 76 Se、 78 Se、 80 Se、 130 Ba、 132 Ba、 134 Ba、 136 Ba、 138 Ba、 32 S, 34 S and 36 S is particularly suitable as an n-type dopant for doping silicon substrates (D) in quantum dot (NV) and / or nuclear quantum dot (CI) coupling regions. For G centers in silicon, p-type doping of silicon substrates (D) with spinless isotopes in the quantum dot (NV) regions is very difficult. Instead of standard Group III dopant atoms, other isotopes must be used because these standard Group III dopant atoms all possess nuclear magnetic moments. Some lower-energy potential dopants are merely quasi-stable and lack nuclear magnetic moments. 204 Tl has 3.783(12)×10 12 Its half-life of 1 year makes it quasi-stable. 204The magnetic moment μ of Tl is only 0.09. However, for 0.3 eV, the acceptor level is already somewhat far from the band edge. Therefore, using 204 Tl doping is poor, but may still be a suitable compromise. Stable palladium isotopes 102 Pd, 104 Pd, 106 Pd, 108 Pd, 110 Pd, with its energy distance of 0.34 eV from the top edge of its valence band, results in p-type doping without nuclear magnetic momentum. Therefore, palladium is a better compromise. (Beryllium isotopes without nuclear magnetic momentum...) 10 Be is also metastable, with a stability of 1.51(4)×10⁻⁶. 6 A half-life of 1000 eV. In silicon, beryllium acts as an acceptor with two energy levels in a band gap at 0.42 eV and 0.17 eV from the top edge of the valence band. Therefore, radioactive beryllium... 10< Be is a very good compromise for p-type doping of silicon on a silicon substrate (D) in quantum dot (NV) or nuclear quantum dot (CI) regions. Therefore, a key finding in the preparation of this paper is that doping of the silicon substrate (D) material in the coupling regions of quantum dots (NV) and / or nuclear quantum dots (CI) with isotopes lacking nuclear magnetic moments or, as a compromise, with isotopes having nuclear moments less than μ = 0.1. It has been recognized that when these isotopes lack nuclear magnetic moments μ, doping with half-lives longer than 10-1 is a good compromise. 5 Metastable isotope-doped silicon materials of Group 3 (D) are particularly preferred for achieving p-type doping of the silicon substrate (D) material in the coupling regions of quantum dots (NV) and / or nuclear quantum dots (CI).

[0183] Such as boron isotopes 10 B or aluminum isotopes 26 Other stable isotopes such as Al exhibit integer magnetic moments μ, and are therefore parasiticly coupled to quantum dots (NV) and nuclear quantum dots (CI).

[0184] therefore, 10 Be、 102 Pd, 104 Pd, 106 Pd, 108 Pd, 110 Pd, 204 Tl is suitable for generating p-type doping on silicon substrates (D), especially 28 Si silicon substrate and 28 Si epitaxial layers (DEPI) are because they have no magnetomotive force ( 10 Be、 102 Pd, 104 Pd, 106 Pd,108 Pd, 110 Pd) or like 204 Tl also has a very low magnetic moment.

[0185] Stable isotopes such as boron 11 B. Stable isotopes of gallium 69 Ga and 71 Stable isotopes of Ga and indium 113 Stable isotopes of In and thallium 203 Tland 205 Other common stable isotopes of p-type dopants in silicon, such as Tl, exhibit significant nuclear magnetic moments and are not readily adaptable to altering the Fermi level near quantum dots (NVs) or nuclear quantum dots (CIs), thus making them less suitable for application. However, they do qualify as potential nuclear quantum dots (CIs), as will be explained later. See HRVydyanath, JSLorenzo, FA The article “Defect pairing diffusion, and solubility studies in selenium-doped silicon”, Journal of Applied Physics 49, 5928 (1978), https: / / doi.org / 10.1063 / 1.324560.

[0186] Generally, isotopes without magnetic moments are used to dope regions of quantum dots (NVs) or nuclear quantum dots (CIs). The term "region" should be understood herein as an interaction region for direct or indirect interaction in the form of coupling. Direct interaction occurs between one quantum object—e.g., a quantum dot (NV) or a nuclear quantum dot (CI)—and another quantum object—e.g., another quantum dot. Indirect interaction occurs with the aid of at least one other quantum object—e.g., a third quantum dot. For this, see the explanation of "quantum bus" described later below. Preferably, if present, the quantum dot (NV) is located below the surface (OF) of the substrate (D) and / or epitaxial layer (DEPI) at a more or less predetermined first distance (d1) along a virtual vertical line (LOT). Preferably, this first distance (d1) is 2 nm to 60 nm and / or more preferably 5 nm to 30 nm and / or 10 nm to 20 nm, with a particularly preferred first distance (d1) of 5 nm to 30 nm.

[0187] To reduce or even avoid the coupling of the control signal of a qubit (QUB) to other qubits (QUB2) in the device, it is useful to minimize field expansion using microstrip lines (also known as microstrip transmission lines). Therefore, this paper proposes a qubit (QUB) in which horizontal lines (LH, LH1) and vertical lines (LV, LV1) are portions of individual microstrip lines and / or individual tri-plate lines, respectively. In the case of using microstrip lines, the vertical microstrip line comprises a first vertical shield line (SV1) and a vertical line (LV), and the horizontal microstrip line comprises a first horizontal shield line (SH1) and a horizontal line (LH).

[0188] In the case of a three-plate wire, the vertical three-plate wire includes a first vertical shield (SV1), a second vertical shield (SV2), and a vertical line (LV). In this case, the vertical line (LV) preferably extends at least partially between the first vertical shield (SV1) and the second vertical shield (SV2).

[0189] In this case, the horizontal three-plate line preferably includes a first horizontal shield (SH1), a second horizontal shield (SH2), and a horizontal line (LV), which extends at least partially between the first horizontal shield (SH1) and the second horizontal shield (SH2).

[0190] Preferably, but not necessarily, when using three-plate wires, the sum of the currents (ISV1, IV, ISV2) through the three-plate wires (SV1, LV, SV2) is zero, which limits these currents to the magnetic field near these lines.

[0191] This limitation on the magnetic field can be better defined (see...) Figure 16To this end, a first additional vertical line is deposited from the location of the first virtual vertical quantum dot (VVNV1) to the surface (OF) of the substrate (D) and / or epitaxial layer (DEPI) (if present), along a first additional vertical line (VLOT1) parallel to the first vertical line (LOT). The first virtual vertical quantum dot (VVNV1) will now also be located at a first distance (d1) from the surface (OF), and thus at the same depth as the quantum dot (NV). The first additional vertical line (VLOT1) then crosses the surface (OF) of the substrate (D) and / or epitaxial layer (DEPI) (if present) at a first additional vertical point (VLOTP1). The horizontal line (LH) and the first vertical shielding line (SV1) are again located on the surface of the substrate (D) and / or epitaxial layer (DEPI) (if present). The horizontal line (LH) and the first vertical shielding line (SV1) now preferably intersect at a non-zero intersection angle (α) near or at the first vertical point (VLOTP1). Similarly, on the opposite side of the quantum dot (NV), a second vertical line (VLOT2) parallel to the first vertical line (LOT) can be deposited from the location of the second virtual vertical quantum dot (VVNV2) to the surface (OF) of the substrate (D) and / or epitaxial layer (DEPI) (if present). The second virtual vertical quantum dot (VVNV2) is thus also located below the surface (OF) at a first distance (d1) from the surface. The second vertical line (VLOT2) passes through the surface (OF) of the substrate (D) and / or epitaxial layer (DEPI) (if present) at the second vertical point (VLOTP2). The horizontal line (LH) and the second vertical shielding line (SV2) are again located on the surface of the substrate (D) and / or the epitaxial layer (DEPI) (if present). The horizontal line (LH) and the second vertical shielding line (SV2) intersect in a similar manner with a non-zero intersection angle (α) near or at the second vertical point (VLOTP2). Preferably, a single current (ISV1, IV1, ISV2) through a single line (SV1, LV, SV2) of the three-plate line is now selected such that the first virtual vertical magnetic flux density vector (B) at the location of the first virtual vertical quantum dot (VVNV1) is such that... VVNV1 The magnitude of ) is almost zero, and makes the second virtual vertical magnetic flux density vector (B) at the location of the second virtual vertical quantum dot (VVNV2) almost zero. VVNV2 The magnitude of ) is almost zero, and the magnetic flux density vector (B) at the location of the quantum dot (NV) is also close to zero. NVThe value is not zero. It can be easily seen that this is ultimately a polynomial approximation problem where all shielding lines are parallel to the line (LH, LV), and the other shielding current can be freely chosen to improve the approximation. The downside is that this increases the minimum distance between the two qubits (QUB1, QUB2) and thus reduces the coupling frequency, thereby reducing the number of operations that can be performed.

[0192] In a similar manner, an approximation of the field along a horizontal line can be performed. In this case, a first other horizontal vertical line (HLOT1) parallel to the first vertical line (LOT) can be deposited from the location of the first virtual horizontal quantum dot (VHNV1) to the surface (OF) of the substrate (D) and / or the epitaxial layer (DEPI) (if present). The first virtual horizontal quantum dot (VHNV1) is located at a first distance (d1) below the surface (OF). The first other horizontal vertical line (VLOT1) passes through the surface (OF) of the substrate (D) and / or the epitaxial layer (DEPI) (if present) at the first other horizontal vertical point (HLOTP1). The vertical line (LV) and the first horizontal shielding line (SH1) are located on the surface of the substrate (D) and / or the epitaxial layer (DEPI) (if present). The vertical line (LV) and the first horizontal shielding line (SH1) intersect at a non-zero intersection angle (α) near or at the first horizontal vertical point (HLOTP1). A second horizontal vertical line (HLOT2) parallel to the first vertical line (LOT) can be deposited from the location of the second virtual horizontal quantum dot (VHNV2) to the surface (OF) of the substrate (D) and / or epitaxial layer (DEPI) (if present). The second virtual horizontal quantum dot (VHNV2) is located at a first distance (d1) below the surface (OF). The second horizontal vertical line (HLOT2) passes through the surface (OF) of the substrate (D) and / or epitaxial layer (DEPI) (if present) at the second horizontal vertical point (HLOTP2). The vertical line (LV) and the second horizontal shielding line (SH2) are located on the surface of the substrate (D) and / or epitaxial layer (DEPI) (if present). The vertical line (LV) and the second horizontal shielding line (SH2) intersect at a non-zero crossing angle (α) near or at the second horizontal vertical point (HLOTP2). Here, the individual currents (ISH1, IH, ISH2) of the individual lines (SH1, LH, SH2) through the three-plate line are also chosen such that the first virtual horizontal magnetic flux density vector (B) at the location of the first virtual horizontal quantum dot (VHNV1) is... VHNV1 The amplitude of ) is almost zero, and the second virtual horizontal magnetic flux density vector (B) at the location of the second virtual horizontal quantum dot (VHNV2) is VHNV2The magnitude of ) is almost zero, and the magnetic flux density vector (B) at the location of the quantum dot (NV) is NV The amplitude of ) is not zero.

[0193] In order to extract the generated photoelectrons, it is useful that, if in or near the LOTP region, the substrate (D) is connected to the first horizontal shield (SH1) by means of at least one first horizontal ohmic contact (KH11) and / or if in or near the LOTP region, the substrate (D) is connected to the second horizontal shield (SH2) by means of at least one second horizontal ohmic contact (KH12) and / or if in or near the LOTP region, the substrate (D) is connected to the first vertical shield (SV1) by means of at least one first vertical ohmic contact (KV11) and / or if in or near the LOTP region, the substrate (D) is connected to the second vertical shield (SV2) by means of at least one second vertical ohmic contact (KV12) and / or if in or near the LOTP region, the substrate (D) is connected to the extraction line by means of at least one second vertical ohmic contact (KV12). Preferably, the resistive contacts (KV11, KV12, KH11, KH12) comprise high n- or p-type doping, preferably obtained by means of isotopes without magnetic moments μ, as previously mentioned. Preferably, the leads are made of materials that preferably substantially do not contain isotopes with nuclear magnetic moments. For example, isotopes can be considered. 46 Ti、 48 Ti and 50 Titanium metallized (Ti). Preferably, the insulators between the lines (LH, LV) themselves and between the materials of one side of the lines (LH, LV) and the substrate (D) on the other side are also made of a material that substantially does not contain isotopes having magnetic moments. For example, in many cases, the use of... 28 Si 16 O2 silicon dioxide. It is certainly possible to use ohmic contacts that differ from titanium contacts.

[0194] The nuclear quantum bit (CQUB) according to the present invention

[0195] As mentioned in the previous section, in addition to quantum dots (NV), nuclear quantum dots (CI) can also be manufactured.

[0196] The core of the following section is a repetition of the previous sections, except that the qubit is now structurally based on nuclear spin rather than electron spin. See the preceding sections for a detailed discussion of the isotopes that can be used.

[0197] As described above, in the case of a diamond substrate (D), 13 C isotopes and other materials can be used as nuclear quantum dots (CI).

[0198] In the case of a silicon substrate (D), for example, 29 Si isotopes can be used as nuclear quantum dots (CI).

[0199] For example, in the case of a silicon carbide substrate (D), 29 Si isotopes and / or 13 C isotopes can be used as nuclear quantum dots (CI).

[0200] diamond

[0201] The important point here is that, in the case of a diamond substrate (D), 13 C isotopes can be manufactured as close as possible to the quantum dot (NV) (e.g., in the form of an NV center) and different locations can be assumed to be quantum dots (NVs), such as NV centers.

[0202] silicon

[0203] In the case of a silicon substrate (D), it is important to make it in a similar manner. 29 Si isotopes can be made as close as possible to quantum dots (NVs) in the form of G centers during manufacturing, and occupy different positions relative to quantum dots (NVs), such as G centers.

[0204] silicon carbide

[0205] In the case of a silicon carbide substrate (D), it is important, for example, to make in a similar manner 29 Si isotopes or 13 C isotopes can be made as close as possible to the quantum dot (NV) in the form of a V center during the manufacturing process, and occupy different positions relative to the quantum dot (NV), i.e., the V center.

[0206] General information about coupling

[0207] Capable of implanting a large number of 13 C isotopes or 29Si isotopes do not interfere with each other due to their short coupling range. Nuclear quantum dots (CIs) have very short nuclear spins compared to the electron spins of quantum dots (NVs) with long coupling ranges. Therefore, it is preferable to create connections between nuclear quantum dots (CIs) that have a greater spatial distance than the nuclear coupling range by chains of one or more quantum dots (NVs) spaced at least in pairs, such that the two quantum dots (NV1, NV2) in such a pair have a smaller distance than the electron-electron coupling range between the two quantum dots (NV1, NV2), and wherein the quantum dot pair results in a closed chain of quantum dots at least in pairs coupled to each other, thereby allowing nuclear quantum dots (CIs) spatially separated from each other to couple through these associated quantum dots. This is accomplished by a quantum bus (QUBUS), described later.

[0208] Molecular implantation in diamond

[0209] For example, to create a suitable structure in a diamond substrate (D), heptamide or another suitable carbon compound containing nitrogen atoms can be implanted. Properly manufactured heptamide may include N-nitrogen atoms and 5... 13 C isotopes. In this case, nitrogen atoms can react with... 13 The carbon isotope is implanted together. Nitrogen atoms are preferably formed into NV centers, i.e., quantum dots (NVs), while 13 C isotopes are used to form nuclear quantum dots (CI). The advantage of doing so is that more complex registers can be produced in a single manufacturing step in diamond, which serves as the substrate (D).

[0210] Preferably, this is a method for generating quantum ALUs in a material on a diamond substrate (D), the method comprising the step of implanting carbon-containing molecules, wherein the molecules comprise at least one, two, three, four, five, six, seven or more 13 A carbon isotope, wherein the molecule contains at least one nitrogen atom.

[0211] Basic control device

[0212] Therefore, a nuclear quantum dot (CI) based on a nuclear quantum bit (CQUB) preferably includes means for controlling the nuclear quantum dot (CI), a substrate (D) optionally having an epitaxial layer (DEPI), the nuclear quantum dot (CI), and a circularly polarized electromagnetic field (B) suitable for generating an electromagnetic field at the location of the nuclear quantum dot (CI). RWThe apparatus is described above. Preferably, as described above, if present, an epitaxial layer (DEPI) is deposited on a substrate (D). The substrate (D) and / or the epitaxial layer (DEPI) (if present) have a surface (OF). The nuclear quantum dots (CI) exhibit magnetic moments, particularly nuclear spins. Suitable for generating electromagnetic wave fields, preferably circularly polarized wave fields (B). RW The device is preferably located on the surface of the substrate (D) and / or the epitaxial layer (DEPI) (if present). It is suitable for generating electromagnetic wave fields, particularly circularly polarized wave fields (B). RW The device is preferably securely attached to the substrate (D) and / or the epitaxial layer (DEPI).

[0213] Similar to qubits (QUBs), a vertical line can be deposited again from the location of the nuclear quantum dot (CI) to the surface (OF) of the substrate (D) and / or epitaxial layer (DEPI) (if present) along a vertical line (LOT). The vertical line (LOT) passes through the surface (OF) of the substrate (D) and / or epitaxial layer (DEPI) (if present) at the point of perpendicularity (LOTP). This is suitable for generating electromagnetic wave fields, especially circularly polarized electromagnetic wave fields, particularly radio wave fields (B). RW The device is preferably located near or at the LOTP (Lower Point of Horizontal ...

[0214] The proposed nuclear quantum bit (CQUB) preferably comprises horizontal lines (LH) and vertical lines (LV), which are preferably located on the surface of the substrate (D) and / or epitaxial layer (DEPI) (if present). Preferably, the horizontal lines (LH) and vertical lines (LV) form, at the location of the nuclear quantum dot (CI), the aforementioned features suitable for generating electromagnetic wave fields, particularly circularly polarized electromagnetic wave fields, and especially radio wave fields (B). RW ) device.

[0215] Preferably, a virtual vertical line can be deposited from the location of the nuclear quantum dot (CI) to the surface (OF) of the substrate (D) and / or epitaxial layer (DEPI) (if present) along a virtual vertical line (LOT), wherein the vertical line (LOT) passes through the surface (OF) of the substrate (D) and / or epitaxial layer (DEPI) (if present) at the vertical point (LOTP), and wherein the horizontal line (LH) and the vertical line (LV) intersect at or near the vertical point (LOTP) with a non-zero intersection angle (α).

[0216] The horizontal line (LH) is preferably electrically insulated from the vertical line (LV) by means of an electrical insulator (IS). Preferably, the horizontal line (LH) and / or the vertical line (LV) are transparent to "green light" and are preferably made of a conductive material that is optically transparent to green light, particularly indium tin oxide (commonly abbreviated as ITO).

[0217] The angle (α) is preferably substantially right-angled. Preferably, the substrate (D) comprises paramagnetic centers and / or quantum dots (NVs). Furthermore, the substrate (D) preferably comprises diamond or optionally silicon or optionally silicon carbide. Other materials are conceivable as substrates.

[0218] According to the variant of the substrate (D) material

[0219] In a preferred embodiment, the substrate (D) comprises diamond having NV centers and / or ST1 centers and / or L2 centers and / or SiV centers as quantum dots (NVs).

[0220] In another preferred embodiment, the substrate (D) comprises silicon having a G-centered quantum dot (NV).

[0221] In another preferred embodiment, the substrate (D) comprises silicon carbide having a V center as a quantum dot (NV).

[0222] diamond

[0223] In a diamond embodiment, the substrate (D) comprises diamond and quantum dots (NV), wherein the quantum dots (NV) comprise vacancies or other impurities. Preferably, the substrate (D) comprises diamond and quantum dots (NV), wherein the quantum dots (NV) comprise Si atoms or Ge atoms or N atoms or P atoms or As atoms or Sb atoms or Bi atoms or Sn atoms or Mn atoms or F atoms or any other atoms that generate impurity centers and / or impurities with paramagnetic behavior in the diamond. In another sub-variant, the substrate (D) comprises diamond and nuclear quantum dots (CI), wherein the nuclear quantum dots (CI) comprise 13 C isotopes or 14 N isotope or 15 The nucleus of an isotope of nitrogen or other atoms whose nuclei possess a magnetic moment. In important subvariants, the NV center itself simultaneously forms as both a nuclear quantum dot (CI) and a quantum dot (NV). In this case, the substrate (D) comprises diamond and nitrogen atoms, preferably as nuclear quantum dots (CI). 14 N isotope or 15 The nucleus of the N isotope (which is the nitrogen atom at the NV center under discussion).

[0224] silicon

[0225] In a silicon embodiment, the substrate (D) comprises silicon and quantum dots (NV), wherein the quantum dots (NV) comprise vacancies or other impurities, such as carbon atoms. Preferably, the substrate (D) comprises silicon and quantum dots (NV), wherein the quantum dots (NV) comprise C atoms or Ge atoms or N atoms or P atoms or As atoms or Sb atoms or Bi atoms or Sn atoms or Mn atoms or F atoms or other atoms that generate impurity centers with paramagnetic behavior in the silicon and / or other impurities. In another sub-variant, the substrate (D) comprises silicon and nuclear quantum dots (CI), which comprise 29 Si isotopes or 13 C isotopes or 14 N isotope or 15 The nucleus of an isotope of nitrogen or other atoms whose nuclei possess a magnetic moment. In a significant sub-variant of this variant, the G center itself is simultaneously formed as a nuclear quantum dot (CI) and a quantum dot (NV). In this case, the substrate (D) comprises silicon and, preferably, a nuclear quantum dot (CI). 13 C isotopes or 29 The nucleus of the Si isotope.

[0226] silicon carbide

[0227] In a silicon carbide embodiment, the substrate (D) comprises silicon carbide and quantum dots (NV), wherein the quantum dots (NV) include vacancies or other impurities. Preferably, the substrate (D) comprises silicon carbide and quantum dots (NV), wherein the quantum dots (NV) comprise Si atoms at C sites or C atoms at Si sites or Ge atoms or N atoms or P atoms or As atoms or Sb atoms or Bi atoms or Sn atoms or Mn atoms or F atoms or other atoms that generate impurity centers in silicon carbide and / or impurities in silicon carbide with paramagnetic behavior. In another sub-variant, the substrate (D) comprises silicon carbide and includes 29 Si isotopes or 13 C isotopes or 14 N isotope or 15 Nuclear quantum dots (CIs) are formed from the nuclei of nitrogen isotopes or other atoms whose nuclei possess a magnetic moment. In a significant subvariant of this variant, the V center itself is simultaneously formed as both a nuclear quantum dot (CI) and a quantum dot (NV), in which case the substrate (D) comprises silicon and, preferably, a [missing information - likely a specific material or component] as the nuclear quantum dot (CI). 13 C isotopes or 29 The nucleus of the Si isotope.

[0228] diamond

[0229] Based on 13 When nuclear quantum dots in C isotope diamond are used as the material of the substrate (D), the substrate (D) preferably includes diamond, and the nuclear quantum dots (CI) are preferably... 13The nucleus of the carbon isotope. The quantum dot is preferably an NV center, ST1 center, L2 center, or other paramagnetic center, preferably located at... 13 Near the C isotope. Here, "near" is again understood to mean 13 The magnetic field of the nuclear spin of a C atom can affect the spin of the electronic configuration of the NV center, ST1 center, L2 center, or other paramagnetic centers discussed, and the spin of the electronic configuration of the NV center, ST1 center, L2 center, or other paramagnetic centers discussed can affect the... 13 Nuclear spin of C isotopes.

[0230] silicon

[0231] Based on 29 When nuclear quantum dots in silicon isotopes (Si) are used as the material of the substrate (D), the substrate (D) preferably comprises silicon, and the nuclear quantum dots (CI) are preferably... 29 The nucleus of the Si isotope. The quantum dot is preferably a G-center or other paramagnetic center, which is preferably located at... 29 The vicinity of Si isotopes. Here, "vicinity" is again understood to mean... 29 The magnetic field of the nuclear spin of a Si atom can affect the spin of the electronic configuration of the G center or other paramagnetic centers discussed, and the spin of the electronic configuration of the G center or other paramagnetic centers can affect the... 29 Nuclear spin of Si isotopes.

[0232] silicon carbide

[0233] Based on 29 Si isotopes and 12 When nuclear quantum dots in silicon carbide of C isotope are used as the material of the substrate (D), the substrate (D) preferably includes silicon carbide. 28 Si 12 C), and nuclear quantum dots (CI) are preferably... 29 The nucleus of Si isotopes or 13 The nucleus of the carbon isotope. Quantum dots (NVs) are preferably V-centered or other paramagnetic centers, and are preferably located in... 29 Si isotopes or 13 Near the C isotope. Here, "near" is again understood to mean 29 Si atoms or 13 The magnetic field of the nuclear spin of a carbon atom can affect the spin of the electronic configuration of the V-center or other paramagnetic centers discussed, and the spin of the electronic configuration of the V-center or other paramagnetic centers can affect the... 29 Si isotopes or the aforementioned 13 Nuclear spin of C isotopes.

[0234] At this point, for the sake of completeness, it should be mentioned that nuclear spin is nuclear spin with a spin amplitude greater than 0.

[0235] diamond

[0236] More generally, a nuclear quantum bit (CQUB) can be defined as follows: wherein the substrate (D) comprises diamond, and wherein the nuclear quantum dot (CI) is an isotope with nuclear spin, and wherein the NV center or ST1 center or L2 center or other paramagnetic center is located in the vicinity of the isotope with nuclear spin, and wherein "vicinity" should also be understood here as the magnetic field of the nuclear spin of the isotope being able to influence the spin of the electronic configuration of the NV center, and the spin of the electronic configuration of the NV center or ST1 center or L2 center or other paramagnetic center being able to influence the nuclear spin of the isotope, respectively.

[0237] Multiple nuclear spins can also be used. The corresponding nuclear quantum bit (CQUB) is defined such that the substrate (D) comprises diamond, wherein the nuclear quantum dot (CI) is an isotope having a magnetic moment μ, and wherein at least one other nuclear quantum dot (CI') is an isotope having a magnetic moment μ, and wherein an NV center or ST1 center or L2 center or other paramagnetic center is arranged in the vicinity of the nuclear quantum dot (CI), and wherein an NV center or ST1 center or L2 center or other paramagnetic center is arranged in the vicinity of at least one other nuclear quantum dot (CI'), and wherein "vicinity" is understood herein to mean such that the magnetic field of the nuclear quantum dot (CI) can be distributed... The magnetic field of at least one other nuclear quantum dot (CI') can similarly affect the spin of the electronic configuration of the NV center, ST1 center, L2 center, or other paramagnetic center, and the spin of the electronic configuration of the NV center, ST1 center, L2 center, or other paramagnetic center can affect the nuclear spin of the nuclear quantum dot (CI), and the spin of the electronic configuration of the NV center, ST1 center, L2 center, or other paramagnetic center can affect the nuclear spin of at least one other nuclear quantum dot (CI'). This is a simple diamond-based quantum ALU (QUALU).

[0238] Preferably, the coupling strength between the nuclear qubit (CI, CI') and the electronic configuration of the NV center or ST1 center or L2 center or other paramagnetic center is in the range of 1 kHz to 200 GHz and / or better in the range of 10 kHz to 20 GHz and / or better in the range of 100 kHz to 2 GHz and / or better in the range of 0.2 MHz to 1 GHz and / or better in the range of 0.5 MHz to 100 MHz and / or better in the range of 1 MHz to 50 MHz, particularly preferably 10 MHz.

[0239] Preferably, when the NV center has an electron or a charge carrier configuration, and when the NV center has an electronic configuration, the quantum dot or the paramagnetic center with charge carriers (NV1), for example, the NV center is located near the nuclear quantum dot (CI). When the NV center is the quantum dot, the negative charge of the quantum dot (NV center) is caused by the preferential sulfur doping of diamond mentioned above. When using quantum dot types other than the NV center in diamond, the charge carriers or charge carrier configuration, the color center (i.e., the quantum dot type), and the doping of the substrate (D) or epitaxial layer (DEPI) can be adjusted accordingly. The charge carriers or charge carrier configuration—here, exemplarily, electronic or electronic configuration—exhibit a charge carrier spin state. The nuclear quantum dot (CI) exhibits a nuclear spin state. The term "near" should be understood here to mean that the nuclear spin state can influence the charge carrier spin state and / or the charge carrier spin state can influence the nuclear spin state.

[0240] silicon

[0241] More generally, a nuclear quantum bit (CQUB) can be defined as follows: wherein the substrate (D) comprises silicon, and wherein the nuclear quantum dot (CI) is an isotope having a magnetic moment, and wherein the G center or other paramagnetic center is located in the vicinity of the isotope having a non-zero magnetic moment μ, and wherein “vicinity” should also be understood here to mean that the magnetic field of the nuclear spin of the isotope can affect the spin of the electronic configuration of the G center, and the spin of the electronic configuration of the G center or other paramagnetic center can affect the nuclear spin of the isotope.

[0242] Multiple isotopes with non-zero magnetic momentum can also be used. The corresponding nuclear quantum bit (CQUB) is defined such that the substrate (D) comprises silicon, wherein the nuclear quantum dot (CI) is an isotope with a non-zero magnetic moment μ, and wherein at least one other nuclear quantum dot (CI') is an isotope with a non-zero magnetic moment μ, and wherein a G center or another paramagnetic center is arranged in the vicinity of the nuclear quantum dot (CI), and wherein a G center or other paramagnetic center is arranged in the vicinity of at least one other nuclear quantum dot (CI'), and "vicinity" is understood here to mean that the magnetic field of the nuclear quantum dot (CI) can affect the spin of the electronic configuration of the G center or other paramagnetic center, and the magnetic field of at least one other nuclear quantum dot (CI') can also affect the spin of the electronic configuration of the G center or other paramagnetic center, and the spin of the electronic configuration of the G center or other paramagnetic center can affect the nuclear spin of the nuclear quantum dot (CI), and the spin of the electronic configuration of the G center or other paramagnetic center can affect the nuclear spin of at least one other nuclear quantum dot (CI'). This is a simple silicon-based quantum ALU (QUALU).

[0243] Preferably, the coupling strength between the nuclear qubit (CI, CI') and the electronic configuration of the G center or other paramagnetic center is in the range of 1 kHz to 200 GHz and / or better in the range of 10 kHz to 20 GHz and / or better in the range of 100 kHz to 2 GHz and / or better in the range of 0.2 MHz to 1 GHz and / or better in the range of 0.5 MHz to 100 MHz and / or better in the range of 1 MHz to 50 MHz, and particularly preferably 10 MHz.

[0244] Preferably, in cases where the G center has an electronic configuration or a charge carrier configuration, the quantum dot or paramagnetic center (NV1) with charge carriers, such as the G center, is arranged near the nuclear quantum dot (CI). Due to the aforementioned preferential n-type doping of silicon, the negative charge of the quantum dot (G center) results in the G center being a quantum dot. In cases where other quantum dot types besides the G center are used in diamond, the charge carriers or charge carrier configuration, the impurity center (i.e., the quantum dot type), and the doping of the substrate (D) or epitaxial layer (DEPI) can be adjusted accordingly. The charge carriers or charge carrier configuration—here, electronic or electronic configuration as an example—exhibit a charge carrier spin state. The nuclear quantum dot (CI) exhibits a nuclear spin state. The term "nearby" should be understood here to mean that the nuclear spin state can influence the charge carrier spin state and / or the charge carrier spin state can influence the nuclear spin state.

[0245] silicon carbide

[0246] More generally, a nuclear quantum bit (CQUB) can be defined as follows: wherein the substrate (D) comprises silicon carbide, and wherein the nuclear quantum dot (CI) is an isotope having a non-zero magnetic moment and nuclear spin, and wherein the V center or other paramagnetic center is located in the vicinity of the isotope having a non-zero magnetic moment μ and nuclear spin, and wherein “vicinity” is also understood here to mean that the magnetic field of the nuclear spin of the isotope can affect the spin of the electronic configuration of the V center, and the spin of the electronic configuration of the V center or other paramagnetic center can affect the nuclear spin of the isotope.

[0247] Multiple nuclear spins can also be used. The corresponding nuclear quantum bit (CQUB) is defined such that the substrate (D) comprises silicon carbide, wherein the nuclear quantum dot (CI) is an isotope having nuclear spin and a non-zero magnetic moment μ, and wherein at least one other nuclear quantum dot (CI') is an isotope having nuclear spin and a non-zero magnetic moment μ, and wherein a V center or other paramagnetic center is arranged in the vicinity of the nuclear quantum dot (CI), and wherein the V center or other paramagnetic center is arranged in the vicinity of at least one other nuclear quantum dot (CI'), and wherein "vicinity" is understood herein to mean that the magnetic field of the nuclear quantum dot (CI) can affect the spin of the electronic configuration of the V center or other paramagnetic center, and the magnetic field of at least one other nuclear quantum dot (CI') can also affect the spin of the electronic configuration of the V center or other paramagnetic center, and the spin of the electronic configuration of the V center or other paramagnetic center can affect the nuclear spin of the nuclear quantum dot (CI), and the spin of the electronic configuration of the V center or other paramagnetic center can affect the nuclear spin of at least one other nuclear quantum dot (CI'). This is a simple silicon carbide-based quantum ALU (QUALU).

[0248] Preferably, the coupling strength between the nuclear qubit (CI, CI') and the electronic configuration of the V center or other paramagnetic center is in the range of 1 kHz to 200 GHz and / or better in the range of 10 kHz to 20 GHz and / or better in the range of 100 kHz to 2 GHz and / or better in the range of 0.2 MHz to 1 GHz and / or better in the range of 0.5 MHz to 100 MHz and / or better in the range of 1 MHz to 50 MHz, and particularly preferably 10 MHz.

[0249] Preferably, quantum dots or paramagnetic centers (NV1) with charge carriers are present in the case where the V-center has electrons or a charge carrier configuration, for example, the V-center is arranged near the nuclear quantum dot (CI). Due to the preferred n-type doping of silicon carbide material mentioned above, the negative charge of the quantum dot (V-center) results in the V-center being the case of a quantum dot. In the case of using quantum dot types other than V-centers in silicon carbide, the charge carriers or charge carrier configuration, the color center (i.e., the quantum dot type), and the doping of the substrate (D) or epitaxial layer (DEPI) can be adjusted accordingly. The charge carriers or charge carrier configuration—here, exemplarily, electronic or electronic configuration—exhibit charge carrier spin states. The nuclear quantum dot (CI) exhibits nuclear spin states. The term "nearby" is understood here to mean that the nuclear spin state can influence the charge carrier spin state and / or the charge carrier spin state can influence the nuclear spin state.

[0250] Epitaxial diamond layer on diamond substrate (D)

[0251] The description presented here focuses on quantum computers in which the substrate (D) includes, but is not limited to, diamond. To prevent parasitic coupling between the NV centers or other impurity centers used and the nuclear spins of the substrate (D), if the diamond has… 12 Pure isotope layers epitaxially grown from C isotopes are useful. For the purposes of this disclosure, the area within a radius of 1 μm, preferably within a radius of 0.5 μm, preferably within a radius of 0.2 μm, preferably within a radius of 0.1 μm, preferably within a radius of 50 nm, and preferably within a radius of 20 nm around the NV center is also useful. 13 Isotopic purity exists when the proportion of carbon atoms is less than 1%, more preferably less than 0.1%, more preferably less than 0.01%, and more preferably less than 0.001%. Here, this... 13 C isotopes are either part of a quantum computer, used in the operation of a quantum computer, or intended for such purposes. 13 C isotopes are not included and are counted as 12 The carbon isotope is preferred because the material quality considerations involve minimizing sources of unintended interference to quantum computer operation. For coupling nuclear qubits (CQUBs) via the quantum bus (QBUS) described later, it is preferable that the substrate (D) is n-type doped in the region of the nuclear quantum dot (CI). In the case of NV centers (NV) in diamond, this increases the likelihood that the NV centers (NV) will indeed form at the intended locations when nitrogen atoms are implanted. A similar mechanism works for other substrates and centers. As mentioned above, the substrate (D) is preferably diamond and doped with sulfur in the region of the nuclear quantum dot (CI), more preferably with sulfur without nuclear spin, and even more preferably with... 32 S isotope. Since the effect on vacancies that repel each other through negative charge is decisive here, the effect of reducing vacancy aggregation in the crystal is achieved. When using other isotopes or atoms to achieve this effect, it is important that the substrate (D) is doped with isotopes without nuclear spin in the region of the nuclear quantum dot (CI), so that the quantum bits (QUB) and nuclear quantum bits (CQUB) are not disturbed by additional interactions.

[0252] Epitaxial silicon layer on silicon substrate (D)

[0253] The description presented here also focuses on quantum computers in which the substrate (D) includes, but is not limited to, silicon. To prevent parasitic coupling between the G centers or other impurity centers used and the nuclear spins of the substrate (D), if the silicon of the substrate (D) has… 28Pure isotope layers epitaxially grown from Si isotopes (DEPI) are useful. For the purposes of this disclosure, the layers within a radius of 1 μm, preferably 0.5 μm, preferably 0.2 μm, preferably 0.1 μm, preferably 50 nm, and preferably 20 nm around the G center are also useful. 29 Isotopic purity exists when the proportion of Si atoms is less than 1%, more preferably less than 0.1%, more preferably less than 0.01%, and more preferably less than 0.001%. Here, this... 29 The Si isotope, as a nuclear quantum dot (CI), is either part of the quantum computer itself or used in the operation of the quantum computer, or is intended for such use. 29 Si isotopes are not included and are counted as 28 The Si isotope is chosen because the material quality considerations involve minimizing sources of unintended interference to quantum computer operation. For coupling of nuclear qubits (CQUBs) via the quantum bus (QBUS) described later, it is preferable that the substrate (D) is appropriately doped in the region of the nuclear quantum dot (CI). In the case of the G center being a quantum dot (NV) in silicon, this increases the likelihood that the G center (NV) will indeed form at the intended location when a carbon atom is implanted. As mentioned above, the substrate (D) is preferably silicon and doped with sulfur in the region of the nuclear quantum dot (CI), more preferably with sulfur without nuclear spin, and even more preferably... 32 S isotope. If other isotopes or atoms are used to achieve this effect, it is important that the substrate (D) is doped with spinless isotopes in the nuclear quantum dot (CI) region so that the quantum bits (QUB) and nuclear quantum bits (CQUB) are not disturbed by additional interactions.

[0254] nuclear quantum dot arrangement

[0255] Preferably, the nuclear quantum bit (CQUB) is configured such that at least one of its nuclear quantum dots (CI) is located below the surface (OF) of the substrate (D) and / or the epitaxial layer (DEPI) (if present) at a first internuclear spacing (d1') along a vertical line (LOT). This first internuclear spacing (d1') is preferably 2 nm to 60 nm and / or more preferably 5 nm to 30 nm and / or more preferably 10 nm to 20 nm; thus, a first internuclear spacing (d1') of 5 nm to 30 nm is particularly preferred and should be targeted.

[0256] Control of nuclear quantum bits (CQUBs) can now be accomplished in a similar manner to the control of quantum bits (QUBs). However, the frequency of the current pulses is lower because the nuclei of nuclear quantum dots (CIs) have a large mass.

[0257] Therefore, the nuclear quantum bit (CQUB) according to the present invention preferably includes horizontal lines (LH, LH1) and / or vertical lines (LV, LV1), the horizontal lines (LH, LH1) are preferably part of a microstrip line and / or a three-plate line, and the vertical lines (LV, LV1) are also preferably part of a microstrip line and / or a three-plate line (SV1, LH, SV2).

[0258] The vertical microstrip line of the nuclear qubit (CQUB) preferably includes a first vertical shielding line (SV1) and a vertical line (LV). The horizontal microstrip line preferably includes a first horizontal shielding line (SH1) and a horizontal line (LH).

[0259] Similarly, the vertical three-plate wire preferably includes a first vertical shield (SV1) and a second vertical shield (SV2), and a vertical line (LV) extending between the first vertical shield (SV1) and the second vertical shield (SV2). The horizontal three-plate wire again preferably includes a first horizontal shield (SH1) and a second horizontal shield (SH2), and a horizontal line (LV) extending between the first horizontal shield (SH1) and the second horizontal shield (SH2).

[0260] Similar to the case of qubits (QUBs) described above, the control device for the nuclear qubits (CQUBs) discussed here is preferably designed such that the sum of the currents through the three plate lines (SV1, LV, SV2) is zero. As with the previous qubits (QUBs), this confines the magnetic flux density field to a region immediately adjacent to the three plate lines. The nuclear quantum dot (CI) should be located in this region to be directly affected.

[0261] Similar to the case of the quantum register (QUREG) consisting of a set of several qubits (QUB) described later, the current feed of all lines of the nuclear qubits (CQUB) of the nuclear quantum register (CQUREG) consisting of a set of several nuclear qubits (CQUB) described later can be designed such that the magnetic flux density B caused by the current feed of the horizontal and vertical lines is substantially different from zero only at the location of the nuclear quantum dot (CI). In this case, the current feed of the shielding lines is preferably selected such that the magnetic flux density B below the intersection created by inserting the shielding lines is also substantially zero at a depth in the substrate (D) corresponding to the first distance (d1). For this purpose, a first other virtual vertical line can be deposited from the location of the first virtual vertical nuclear quantum dot (VVCI1) to the surface (OF) of the substrate (D) and / or the epitaxial layer (DEPI) (if present) along a first other vertical line (VLOT1) parallel to the first vertical line (LOT). The first virtual vertical nuclear quantum dot (VVCI1) is located at a first distance (d1) from the surface (OF). The first additional vertical line (VLOT1) actually passes through the surface (OF) of the substrate (D) and / or epitaxial layer (DEPI) (if present) at the first additional vertical point (VLOTP1). The horizontal line (LH) and the first vertical shielding line (SV1) are preferably located on the surface of the substrate (D) and / or epitaxial layer (DEPI) (if present). They intersect each other at a non-zero intersection angle (α) near the first vertical point (VLOTP1) or at the first vertical point (VLOTP1). A second additional virtual vertical line can be deposited parallel to the first vertical line (LOT) from the location of the second virtual vertical quantum dot (VVCI2) to the surface (OF) of the substrate (D) and / or epitaxial layer (DEPI) (if present). The second virtual vertical quantum dot (VVCI2) is also located at a first distance (d1) from the surface (OF). The second vertical line (VLOT2) also crosses the surface (OF) of the substrate (D) and / or epitaxial layer (DEPI) (if present) at the second vertical point (VLOTP2). The horizontal line (LH) and the second vertical shielding line (SV2) also lie on the surface of the substrate (D) and / or epitaxial layer (DEPI) (if present). The horizontal line (LH) and the second vertical shielding line (SV2) intersect again at a non-zero intersection angle (α) near or at the second vertical point (VLOTP2). As previously mentioned, it is preferable to select a single current (ISV1, IV1, ISV2) through a single line (SV1, LV, SV2) of the three-plate line such that the first virtual vertical magnetic flux density vector (B) at the location of the first virtual vertical quantum dot (VVCI1) is such that... VVCI1The amplitude of ) is almost zero, and the second virtual vertical magnetic flux density vector (B) at the location of the second virtual vertical nuclear quantum dot (VVCI2) is VVCI2 The amplitude of ) is almost zero, and the magnetic flux density vector (B) at the location of the nuclear quantum dot (CI) is CI The amplitude of ) is not zero.

[0262] We imagine a two-dimensional arrangement of nuclear quantum registers (CQUEREG) with m columns and n rows. For simplicity, we assume that the CQUEREG comprises n × m nuclear qubits, each nuclear qubit (CQUB) having one nuclear quantum dot (CI). The CQUEREG is organized such that the m nuclear qubits (CQUBi1 to CQUBim) in the i-th row of the CQUEREG share a horizontal line (LHi) of 1 ≤ i ≤ n, and the n nuclear qubits (CQUB1j to CQUBnj) in the j-th column of the CQUEREG share a vertical line (LVj) of 1 ≤ j ≤ m.

[0263] Each of the n×m nuclear qubits (CQUBij) in a nuclear quantum register (CQUREG) has a nuclear quantum dot (CIij), which has an associated local magnetic flux density (Bij) at the location of the nuclear quantum dot (CIij). These associated local magnetic flux densities (Bij) at the location of the nuclear quantum dot (CIij) form a magnetic flux density vector. To generate a predetermined magnetic flux density vector, a single current signal must now be injected into each line. These current signals together form a vector current signal. The dimension of this current density vector increases only linearly with the sum of the number of rows n and the number of columns m. On the other hand, the number of nuclear quantum dots increases proportionally with the product of the number of columns m and the number of rows n. Therefore, it is readily understood that the nuclear quantum register (CQUREG) is preferably manufactured as a one-dimensional array of nuclear qubits (CQUREG) with nuclear quantum dots (CI).

[0264] This result can be applied to previously introduced qubits (QUBs).

[0265] Similarly, we imagine a quantum register (QUREG) arranged in a two-dimensional array with m columns and n rows. The quantum register (QUREG) contains n×m qubits (QUBij) in a similar manner, where, for simplicity, we assume each core qubit (QUBij) has one quantum dot (NVij). Let the quantum register (QUREG) be reorganized such that the m qubits (QUBi1 to QUBim) in the i-th row of the quantum register (QUREG) have 1 ≤ i ≤ n horizontal lines (LHi), and the n qubits (QUB1j to QUBnj) in the j-th column of the quantum register (QUREG) have 1 ≤ j ≤ m vertical lines (LVj).

[0266] Each qubit (QUBij) in the n×m core qubits (CQUB) of the nuclear quantum register (CQUREG) has a quantum dot (NVj) and an associated local magnetic flux density (Bij) at the location of the quantum dot (NVij). These associated local magnetic flux densities (Bij) at the location of the quantum dot (NVij) form a magnetic flux density vector. To generate a predetermined magnetic flux density vector, a single current signal must now be injected into each line. These current signals together form a vector current signal. The dimension of this current density vector also increases only linearly with the sum of the number of rows n and the number of columns m. On the other hand, the number of quantum dots increases proportionally to the product of the number of columns m and the number of rows n. Therefore, it is readily understood that the quantum register (QUREG) is preferably manufactured as a one-dimensional array of qubits (NV) with quantum dots (NV).

[0267] Let's return to the nuclear quantum bit (CQUB) mentioned earlier.

[0268] Preferably, a first additional virtual horizontal line can be deposited from the location of the first virtual horizontal quantum dot (VHCIV1) to the surface (OF) of the substrate (D) and / or the epitaxial layer (DEPI) (if present) along a first additional horizontal line (HLOT1) parallel to the first vertical line (LOT). The first virtual horizontal quantum dot (VHCIV1) is preferably located at a first distance (d1) from the surface (OF). The first additional horizontal line (HLOT1) again crosses the surface (OF) of the substrate (D) and / or the epitaxial layer (DEPI) (if present) at a first additional horizontal vertical point (HLOTP1). The vertical line (LV) and the first horizontal shielding line (SH1) are again preferably located on the surface of the substrate (D) and / or the epitaxial layer (DEPI) (if present). The vertical line (LV) and the first horizontal shielding line (SH1) are again preferably intersecting at a non-zero intersection angle (α) near the first horizontal vertical point (HLOTP1) or at the first horizontal vertical point (HLOTP1). A second virtual horizontal quantum dot (VHCI2) can be deposited from the location of the second virtual horizontal quantum dot (VHCI2) to the surface (OF) of the substrate (D) and / or the epitaxial layer (DEPI) (if present) along a second additional horizontal vertical line (HLOT2) parallel to the first vertical line (LOT). The second virtual horizontal quantum dot (VHCI2) is preferably located at a first distance (d1) from the surface (OF). If present, the second additional horizontal vertical line (HLOT2) preferably again crosses the surface (OF) of the substrate (D) and / or the epitaxial layer (DEPI) (if present) at a second additional horizontal vertical point (HLOTP2). Therefore, the vertical line (LV) and the second horizontal shielding line (SH2) are also preferably located on the surface of the substrate (D) and / or the epitaxial layer (DEPI) (if present). The vertical line (LV) and the second horizontal shielding line (SH2) preferably intersect each other near the second horizontal vertical point (HLOTP2) or at the second horizontal vertical point (HLOTP2) in a similar manner with a non-zero intersection angle (α). Furthermore, it is preferable to select a single current (ISV1, IV, ISV2) through a single line (SV1, LV, SV2) of the three-plate line, such that the first virtual horizontal magnetic flux density vector (B) at the location of the first virtual horizontal nuclear quantum dot (VHCI1) is such that... VHCI1 The amplitude of ) is almost zero, and the second virtual horizontal magnetic flux density vector (B) at the location of the second virtual horizontal quantum dot (VHCI2) is... VHCI2 The amplitude of ) is almost zero, and the magnetic flux density vector (B) at the location of the nuclear quantum dot (CI) is NV The amplitude of ) is not zero.

[0269] In order to extract the generated photoelectrons, in or near the LOTP region, the substrate (D) is connected to the first horizontal shield (SH1) via at least one first horizontal ohmic contact (KH11). Furthermore, preferably in or near the LOTP region, the substrate (D) is connected to the second horizontal shield (SH2) via at least one second horizontal ohmic contact (KH12). Additionally, preferably in or near the LOTP region, the substrate (D) is connected to the first vertical shield (SV1) via at least one first vertical ohmic contact (KV11). Finally, preferably in or near the LOTP region, the substrate (D) is connected to the second vertical shield (SV2) via at least one second vertical ohmic contact (KV12).

[0270] Preferably, such ohmic contacts (KV11, KV12, KH11, KH12) contain titanium.

[0271] Register construction according to the present invention

[0272] A quantum register (CEQUEREG) is constructed from quantum dots (NV) and nuclear quantum dots (CI).

[0273] The basic nuclear electronic quantum register (CEQUEREG) mentioned above includes nuclear qubits (CQUB) and qubits (QUB).

[0274] A universal nuclear electronic quantum register (CEQUEREG) consists of at least one nuclear qubit (CQUB) and at least one qubit (QUB).

[0275] In the following text, a nuclear electronic quantum register (CEQUREG) comprising n but at least two nuclear qubits (CQUB1 to CQUBn) and one qubit (QUB) is referred to as a quantum ALU (QUALU).

[0276] The control device for the nuclear quantum dot (CI) of the nuclear quantum bit (CQUB) of the nuclear electronic quantum register (CEQUREG) preferably includes a sub-device (LH, LV), which is also preferably a sub-device (LH, LV) of the control device for the quantum dot (NV) of the nuclear electronic quantum register (CEQUREG) (QUB).

[0277] Therefore, the nuclear electronic quantum register (CEQUREG) according to the present invention includes a nuclear quantum dot (CI) for controlling the nuclear qubits (CQUB) of the nuclear electronic quantum register (CEQUREG) and a quantum dot (NV) for simultaneously controlling the qubits (QUB) of the nuclear electronic quantum register (CEQUREG), comprising a common substrate (D) for the nuclear qubits (CQUB) and the qubits (QUB), and optionally including a common epitaxial layer (DEPI) for the nuclear qubits (CQUB) and the qubits (QUB), and including a field (B) adapted to generate electromagnetic wave fields (B) at the locations of the nuclear quantum dot (CI) and the quantum dot (CI). RW B MW This refers to a shared device for the core quantum dot (CQUB) and the quantum dot (QUB). If present, a shared epitaxial layer (DEPI) is preferably deposited on a shared substrate (D). If applicable, the core quantum dot (CI) is deposited together with the epitaxial layer (DEPI). The shared substrate (D) and / or the shared epitaxial layer (DEPI) (if present) have surfaces (OF). The core quantum dot (CI) typically exhibits a magnetic moment. The quantum dot (NV) is preferably a paramagnetic center in the shared substrate (D) and / or the shared epitaxial layer (DEPI) (if present).

[0278] quantum dots

[0279] In particular, if diamond is used, the quantum dot (NV) can also be an NV center, ST1 center, L2 center, or other paramagnetic impurity center in diamond.

[0280] In particular, if silicon is used, quantum dots (NVs) can also be G centers or other paramagnetic impurity centers in silicon.

[0281] In particular, if silicon carbide is used, the quantum dot (NV) can also be a V center or other paramagnetic impurity center in silicon carbide.

[0282] Control device

[0283] Suitable for generating electromagnetic wave fields (B RW B MW Furthermore, the common device for controlling the nuclear quantum dot (CI) and the quantum dot is preferably located on the surface of the common substrate (D) and / or the common epitaxial layer (DEPI) (if present).

[0284] Preferably, the device including horizontal and vertical lines is suitable for generating a circularly polarized electromagnetic wave field (B). RW B MWThis can be achieved in the horizontal (LH) and vertical (LV) lines by the fact that the current in the horizontal (LH) line has a horizontal current component with a frequency, and the current in the vertical (LV) line has a vertical current component with that frequency. Therefore, the vertical current component in the vertical (LV) line is preferably offset by + / -90° relative to the horizontal current component in the horizontal (LH) line. The magnetic flux density components of the magnetic field generated by these current components overlap in the region of the nuclear quantum dot (CI) or quantum dot (NV) to produce a left-handed or right-handed circularly polarized magnetic field there.

[0285] Similarly, as previously done with nuclear qubits (CQUBs) or quantum bits (QUBs), a virtual vertical line can now be deposited again along a virtual vertical line (LOT) from the location of the nuclear quantum dot (CI) and / or from the location of the quantum dot (NV) to the surface (OF) of the substrate (D) and / or epitaxial layer (DEPI) (if present). The virtual vertical line (LOT) again crosses the surface (OF) of the substrate (D) and / or epitaxial layer (DEPI) (if present) at the vertical point (LOTP). As previously mentioned, the apparatus suitable for generating circularly polarized electromagnetic wave fields, particularly radio and / or microwave fields, is preferably located near or at the vertical point (LOTP).

[0286] Therefore, the proposed nuclear electron quantum register (CEQUEREG) preferably includes horizontal lines (LH) and vertical lines (LV) as a device suitable for generating circularly polarized electromagnetic wave fields, especially radio and / or microwave fields.

[0287] As previously stated, the horizontal line (LH) and vertical line (LV) are preferably located on the surface of the substrate (D) and / or the epitaxial layer (DEPI) (if present). Preferably, the horizontal line (LH) and vertical line (LV) intersect at a non-zero intersection angle (α) near or at the virtual vertical point (LOTP). Preferably, the horizontal line (LH) is sufficiently electrically isolated from the vertical line (LV) by means of electrical insulation (IS).

[0288] If the "green light" used to reset the quantum dot is not irradiated from the bottom side (US), the horizontal lines (LH) and / or vertical lines (LV) should be transparent to the "green light". Preferably, the horizontal lines (LH) and / or vertical lines (LV) should be made of a conductive material that is optically transparent to green light, particularly indium tin oxide (commonly abbreviated as ITO).

[0289] Preferably, the angle (α) is essentially a right angle.

[0290] Preferably, the substrate (D) of the nuclear electron quantum register (CEQUEREG) comprises diamond.

[0291] diamond

[0292] Preferably, the material of the substrate (D) is one that does not exhibit nuclear magnetic spin. 12 C isotope-pure diamond. In this case, in a preferred variation, nuclear quantum dot (CI) is... 13 The nucleus of the C isotope, then, is related to most other atoms of the substrate (D). 12 Compared to carbon atoms, it possesses nuclear magnetic spin and thus a non-zero magnetic moment μ, and therefore can interact with quantum dots, such as NV centers. For this purpose, the quantum dot (NV) should be located at the nuclear quantum dot (CI). 13 Near the C isotope. As mentioned above, quantum dots (NVs) are preferably NV centers. Similarly, it is also conceivable to use ST1 and L2 centers or other paramagnetic impurity centers. The term "near" here should be understood to mean 13 The magnetic field of the nuclear spin of a carbon atom can influence the electronic configuration of a quantum dot (NV), such as the spin of the electronic configuration at the NV center (NV), and the spin of the electronic configuration of the quantum dot (NV) can be particularly affected through dipole-dipole interactions. 13 Nuclear spin of C isotopes.

[0293] silicon

[0294] Preferably, the material of the substrate (D) is one that does not exhibit nuclear magnetic spin. 28 The isotope of silicon isotope isotope pure silicon. In this case, in a preferred variation, nuclear quantum dots (CI) are... 29 The nuclei of Si isotopes are related to most other atoms of the substrate (D). 28 Compared to Si atoms, it possesses a magnetic nuclear spin and thus a non-zero magnetic moment μ, and therefore can interact with quantum dots (NVs), such as G centers. For this purpose, the quantum dot (NV) should be located at the nuclear quantum dot (CI). 29 Near the Si isotope. As mentioned above, quantum dots (NVs) are preferably G-centered. Similarly, it is conceivable to use other paramagnetic impurity centers. The term "near" here is understood to mean 29 The magnetic field of the nuclear spin of Si atoms can influence the electronic configuration of quantum dots (NVs), such as the spin of the electronic configuration at the G center, and the spin of the electronic configuration of quantum dots (NVs) can be particularly affected through dipole-dipole interactions. 29 Nuclear spin of Si isotopes.

[0295] silicon carbide

[0296] Preferably, the substrate (D) is made of a material that does not possess nuclear magnetic spin. 28 Si isotopes and 12The carbon isotope isotope is silicon carbide. In this case, in a preferred variation, the nuclear quantum dot (CI) is... 29 The nucleus of Si isotopes or 13 The nucleus of the C isotope, then, is related to most other atoms of the substrate (D). 28 Si atoms and 12 Compared to carbon atoms, it possesses nuclear magnetic spin and thus a non-zero magnetic moment μ, and therefore interacts with quantum dots (NVs), such as V centers. For this purpose, the quantum dot (NV) should be located at the nuclear quantum dot (CI). 29 Near Si isotopes or 13 Near the C isotope. As mentioned above, quantum dots (NV) are preferably V-centered. Similarly, it is conceivable to use other paramagnetic impurity centers. The term "near" here is understood to mean that... 29 Si atoms or 13 The magnetic field of the nuclear spin of a carbon atom can influence the electronic configuration of a quantum dot (NV), specifically the spin of the electronic configuration at the V center, and the spin of the electronic configuration of the quantum dot (NV) can be influenced, in particular, through dipole-dipole interactions. 29 Si isotopes or 13 Nuclear spin of C isotopes.

[0297] More generally, the nuclear electron quantum register (CEQUREG) may have a quantum dot (NV), wherein the quantum dot (NV) is a paramagnetic center having charge carriers or charge carriers and located near the nuclear quantum dot (CI). In this case, the charge carriers or charge carriers exhibit a charge carrier spin state. The nuclear quantum dot (CI) exhibits a nuclear spin state. As mentioned above, in this case, the term "nearby" is understood to mean that the nuclear spin state can influence the charge carrier spin state and / or conversely, the charge carrier spin state can influence the nuclear spin state. Preferably, the frequency range of the coupling strength is at least 1 kHz and / or more preferably at least 1 MHz and less than 20 MHz. In other words, preferably, the frequency range of the coupling strength is 1 kHz to 200 GHz and / or better 10 kHz to 20 GHz and / or better 100 kHz to 2 GHz and / or better 0.2 MHz to 1 GHz and / or better 0.5 MHz to 100 MHz and / or better 1 MHz to 50 MHz, particularly preferably about 10 MHz.

[0298] Construction of the Quantum ALU (QUALU)

[0299] Since the terms qubit (QUB), nuclear qubit (CQUB), quantum register (QUREG), nuclear quantum register (CQUREG), and nuclear electron quantum register (CEQUEREG) have already been explained, a first quantum computer component will be defined. Hereinafter, it will be referred to as a quantum ALU (QUALU). It has a first quantum dot (NV), which is, for example, the NV center (NV) in the case of diamond as the substrate (D), or the G center (G) in the case of silicon as the substrate (D), or the V center (V) in the case of silicon carbide as the substrate (D), which can be considered as a terminal serving as a standard block "quantum ALU (QUALU)". This terminal can be coupled to another quantum dot (NV) of another quantum ALU (QUALU) through an overlapping chain of quantum registers (QUREG) of at least two quantum dots (NV). This other quantum ALU (QUALU) can be spaced far from the first quantum ALU such that the nuclear quantum dot of the first quantum ALU is not directly coupled to the nuclear quantum dot of the second quantum ALU. This coupling can be accomplished solely with the aid of an overlapping chain of quantum registers (QUREGs), whose ancilla bits (NVs) allow indirect coupling between the core quantum dots of the first quantum ALU and the core quantum dots of the second quantum ALU (QUALU). Therefore, in the architecture proposed here, the overlapping chain of quantum registers (QUREGs) functions as a quantum bus (QUBUS) similar to the data bus in a conventional microcomputer. However, instead of data, dependencies are transmitted through this quantum bus (QUBUS). Actual computations are then performed in the individual quantum ALUs (QUALUs), which are connected to the quantum bus (QUBUS) via their quantum dots (NVs). This is the basic idea behind the quantum computer presented in this paper. It is a combination of quantum ALUs consisting of nuclear electronic quantum registers (CEQUREGs) connected via a quantum bus (QUBUS) composed of quantum registers (QUREGs) of various topologies.

[0300] Therefore, such a quantum ALU (QUALU) preferably includes a first nuclear qubit (CQUB1), and typically includes at least a second nuclear qubit (CQUB2). Preferably, such a quantum ALU (QUALU) has a much higher number of p nuclear qubits (CQUB1 to CQUBp). Since the distances from the individual nuclear quantum dots (CIj) of the j-th nuclear electron quantum register (CEQUREGj) in the p nuclear electron quantum registers (CEQUREG1 to CEQUREGp) to the preferred shared quantum dot (NV) of the p nuclear electron quantum registers (CEQUREG1 to CEQUREGp) are typically different, the coupling strength, as well as the electron-nuclear resonance frequency and nuclear-electron resonance frequency explained below, are different for the individual nuclear electron quantum registers (CEQUREGj) (1≤j≤p) in the p nuclear electron quantum registers (CEQUREG1 to CEQUREGp). Therefore, it is possible to address a single nucleo-electron quantum dot (CIj) of p nucleo-electron quantum dots (CI1 to CIp) of a quantum ALU (QUALU) by means of these different nucleo-electron resonance frequencies and electron-nucleo-electron resonance frequencies.

[0301] Therefore, the quantum ALU (QUALU) preferably includes a first core electronic quantum register (CEQUREG1) forming a first core quantum bit (CQUB1) and a second core electronic quantum register (CEQUEREG2) forming a second core quantum bit (CQUB2).

[0302] Particularly preferably, the control device for the first core quantum dot (CI1) of the first core quantum bit (CQUB1) of the first core electronic quantum register (CEQUEREG1) has a sub-device (LH, LV), which is also a sub-device (LH, LV) of the control device for the quantum dot (NV) of the first core electronic quantum bit (QUB) of the first core electronic quantum register (CEQUEREG1), and also a control device for the second core quantum dot (CI2) of the second core quantum bit (CQUB2) of the second core electronic quantum register (CEQUREG2).

[0303] Construction of a homogeneous quantum register (QUREG)

[0304] A uniform quantum register (QUREG), or simply a quantum register (QUREG), comprises only one type of quantum dot (NV). This quantum register preferably includes a first qubit (QUB1) and at least one second qubit (QUB2). The chain of such quantum registers (QUBs) is a fundamental part of the quantum bus (QUBUS) explained below, enabling the transmission of dependencies. According to this scheme, the uniformity of the quantum register (QUREG) is expressed such that the first quantum dot type of the first quantum dot (NV1) of the first qubit (QUB1) of the quantum register (QUREG) is equivalent to the second quantum dot type of the second quantum dot (NV2) of the second qubit (QUB2) of the quantum register (QUREG). For example, the first quantum dot type could be an NV center in diamond, serving as a substrate, and the second quantum dot type could also be an NV center in the same substrate. Similarly, for example, the first quantum dot type could be a G center in silicon, serving as a substrate (D), and the second quantum dot type could also be a G center in the same substrate (D). For example, in a similar manner, the first quantum dot type can be a V-center in silicon carbide, which is the substrate (D) material, and the second quantum dot type can also be a V-center in the same substrate (D).

[0305] Typically, the substrate (D) is shared for both the first qubit (QUB1) and the second qubit (QUB2) of the quantum register (QUREG). For clarity, hereinafter, the quantum dot (NV) of the first qubit (QUB1) of the quantum register (QUREG) will be referred to as the first quantum dot (NV1), and the quantum dot (NV) of the second qubit (QUB2) of the quantum register (QUREG) will be referred to as the second quantum dot (NV2). Similarly, for clarity, hereinafter, the horizontal line (LH) of the first qubit (QUB1) of the quantum register (QUREG) will be referred to as the first horizontal line (LH1), and the horizontal line (LH) of the second qubit (QUB2) of the quantum register (QUREG) will be referred to as the second horizontal line (LH2). Likewise, the vertical line (LV) of the first qubit (QUB1) will be referred to as the first vertical line (LV1), and the vertical line (LV) of the second qubit (QUB2) will be referred to as the second vertical line (LV2). For example, this is useful if the first horizontal line (LH1) is equivalent to the second horizontal line (LH2). Alternatively, for example, this is useful if the first vertical line (LV1) is equivalent to the second vertical line (LV2).

[0306] Preferably, the first horizontal line (LH1) and the second horizontal line (LH2), as well as the first vertical line (LV) and the second vertical line, are substantially composed of isotopes without magnetic moment μ. In this case, it essentially means that the isotopes with magnetic moments of the elements that form part of one or more lines are in proportion K to 100% of the total number of those elements that form part of these lines. 1G Relative to the total natural proportion K shown in the table above 1G The proportion of isotopes with magnetic moments of elements that are components of one or more of these lines relative to 100% of the element that is a component of one or more of these lines, K. 1G '. Wherein the proportion K 1G 'In the region of influence of paramagnetic perturbation (NV) used as quantum dot (NV) and / or nuclear spin used as nuclear quantum dot (CI), the total natural proportion K of the elements under discussion is greater than that of one or more lines.' 1G Smaller by 50%, better by 20%, better by 10%, better by 5%, better by 2%, better by 1%, better by 0.5%, better by 0.1%.

[0307] The quantum register (QUREG) should be constructed small enough to achieve its intended function such that the magnetic field of the second quantum dot (NV2) of the second quantum bit (QUB2) of the quantum register (QUREG) at least temporarily affects the behavior of the first quantum dot (NV1) of the first quantum bit (QUB1) of the quantum register (QUREG), and / or the magnetic field of the first quantum dot (NV1) of the first quantum bit (QUB1) affects the second quantum dot (NV2) of the second quantum bit (QUB2) at least temporarily.

[0308] Preferably, the spatial distance (sp12) between the first quantum dot (NV1) of the first qubit (QUB1) of the quantum register (QUREG) and the second quantum dot (NV2) of the second qubit (QUB2) of the quantum register (QUREG) is very small, such that the magnetic field of the second quantum dot (NV2) of the second qubit (QUB2) of the quantum register (QUREG) at least temporarily affects the behavior of the first quantum dot (NV1) of the first qubit (QUB1) of the quantum register (QUREG), and / or the magnetic field of the first quantum dot (NV1) of the first qubit (QUB1) of the quantum register (QUREG) at least temporarily affects the behavior of the second quantum dot (NV2) of the second qubit (QUB2) of the quantum register (QUREG). Preferably, for this purpose, the second distance (sp12) between the first quantum dot (NV1) of the first quantum bit (QUB1) of the quantum register (QUREG) and the second quantum dot (NV2) of the second quantum bit (QUB2) of the quantum register (QUREG) is less than 50 nm and / or less than 30 nm and / or less than 20 nm and / or less than 10 nm and / or less than 5 nm and / or less than 2 nm, and / or the second distance (sp12) between the first quantum dot (NV1) of the first quantum bit (QUB1) of the quantum register (QUREG) and the second quantum dot (NV2) of the second quantum bit (QUB2) of the quantum register (QUREG) is between 30 nm and 2 nm and / or less than 10 nm and / or less than 5 nm and / or less than 2 nm.

[0309] Such quantum registers can be cascaded. The two-bit quantum registers described above are connected in series along a horizontal line (LH) shared by the two qubits (QUB1, QUB2). Similarly, vertical connection along a vertical line is conceivable instead of horizontal stringing. The horizontal and vertical lines then interchange functions. Two-dimensional connection is also conceivable, corresponding to combinations of these possibilities.

[0310] Instead of a two-qubit quantum register (QUREG), it is also conceivable to string together n qubits (QUB1 to QUBn). As an example, a three-qubit quantum register is shown here, extending along a horizontal line (LH). The same applies to subsequent qubits (QUB4 to QUBn). Of course, the quantum register can extend in other directions by m qubits (QUB0 to QUB(m-1)). For simplicity, the text provided here is limited to positive values ​​of indices from 1 to n.

[0311] Through an exemplary linear cascade of n qubits (QUB1 to QUBn) along an exemplary one-dimensional line in the n-bit quantum register (QUREG) (e.g., along said vertical line (LV) or along said horizontal line (LH)), the spatial distance (sp1n) between the first quantum dot (NV1) of the first qubit (QUB1) of the n-bit quantum register (QUREG) and the n-th quantum dot (NVn) of the n-th qubit (QUBn) of the n-bit quantum register (QUREG) can be very large, such that the first quantum dot (NV1) of the first qubit (QUB1) of the n-bit quantum register (QUREG) is no longer coupled to or can no longer be directly entangled with the n-th quantum dot (NVn) of the n-th qubit (QUBn) of the n-bit quantum register (QUREG). For simplicity, we assume that the n quantum dots (NV1 to NVn) of the n qubits (QUB1 to QUBn) are countably arranged along said one-dimensional line. Said one-dimensional line may also be curved or angled. Therefore, in this example, the n quantum dots (NV1 to NVn) and their corresponding respective qubits (QUB1 to QUBn) can be said to represent a chain of n quantum dots (NV1 to NVn) starting from the first quantum dot (NV1) and ending at the n-th quantum dot (NVn). In the chain of n quantum dots (NV1 to NVn), the quantum dots (NV1 to NVn) and the qubits (QUB1 to QUBn) are countable and can thus be consecutively numbered with integers from 1 to n.

[0312] Therefore, in said chain, the (j-1)-th quantum dot (NV(j-1)) is located before the j-th quantum dot (NVj), and is referred to hereinafter as the preceding quantum dot (NV(j-1)). Therefore, in said chain, the (j-1)-th qubit (QUB(j-1)) having the (j-1)-th quantum dot (NV(j-1)) is located before the j-th qubit (QUB(j)) having the j-th quantum dot (NVj), and is referred to hereinafter as the preceding qubit (QUB(j-1)).

[0313] Therefore, in said chain, the j-th quantum dot (NVj) is followed by the (j+1)-th quantum dot (NV(j+1)), which is referred to hereinafter as the succeeding quantum dot (NV(j+1)). Therefore, in said chain, the j-th qubit (QUB(j)) having the j-th quantum dot (NVj) is followed by the (j+1)-th qubit (QUB(j+1)) having the (j+1)-th quantum dot (NV(j+1)), which is referred to hereinafter as the succeeding qubit (QUB(j+1)). Here, the labeling number j for the exemplary chain is any positive integer satisfying 1<j<n, where n is a positive integer satisfying n>2.

[0314] In this chain, the j-th quantum dot (NVj) has a distance (sp(j-1)j), which is its leading distance. Preferably, the spatial distance (sp(j-1)j) between the j-th quantum dot (NVj) of the j-th qubit (QUBj) of the quantum register (QUREG) and the (j-1)-th quantum dot (NV(j-1)) of the preceding (j-1)-th qubit (QUB(j-1)) of the quantum register (QUREG) is very small, such that the magnetic field of the (j-1)-th quantum dot (NV(j-1)) of the preceding (j-1)-th qubit (QUB(j-1)) of the n-bit quantum register (QUREG) at least temporarily affects the behavior of the j-th quantum dot (NVj) of the j-th qubit (QUBj) of the n-bit quantum register (QUREG), and / or the magnetic field of the j-th quantum dot (NVj) of the j-th qubit (QUBj) of the n-bit quantum register (QUREG) at least temporarily affects the behavior of the (j-1)-th quantum dot (NV(j-1)) of the preceding (j-1)-th qubit (QUB(j-1)) of the quantum register (QUREG). Preferably, the distance (sp(j-1)1) between the j-th quantum dot (NVj) of the j-th quantum bit (QUBj) of the n-bit quantum register (QUEREG) and the (j-1)-th quantum dot (NV(j-1)) of the preceding (j-1)-th quantum bit (QUB(j-1)) of the n-bit quantum register (QUEREG) is less than 50 nm and / or less than 30 nm and / or less than 20 nm and / or less than 10 nm and / or less than 5 nm and / or less than 2 nm, and / or the distance (sp(j-1)j) between the j-th quantum dot (NVj) of the j-th quantum bit (QUBj) of the n-bit quantum register (QUEREG) and the (j-1)-th quantum dot (NV(j-1)) of the preceding (j-1)-th quantum bit (QUB(j-1)) of the n-bit quantum register (QUEREG) is between 30 nm and 2 nm and / or less than 10 nm and / or less than 5 nm and / or less than 2 nm.

[0315] In this chain, the j-th quantum dot (NVj) has a distance (spj(j+1)), which is its successor distance. Preferably, the spatial distance (spj(j+1)) between the j-th quantum dot (NVj) of the j-th qubit (QUBj) of the quantum register (QUREG) and the (j+1)-th quantum dot (NV(j+1)) of the (j+1)-th qubit (QUB(j+1)) following the quantum register (QUREG) is very small, such that the (j+1)-th quantum dot (NV(j+1)) of the (j+1)-th qubit (QUB(j+1)) following the n-bit quantum register (QUREG) at least temporarily affects the behavior of the j-th quantum dot (NVj) of the j-th qubit (QUBj) of the n-bit quantum register (QUREG), and / or the magnetic field of the j-th quantum dot (NVj) of the j-th qubit (QUBj) of the n-bit quantum register (QUREG) at least temporarily affects the behavior of the (j+1)-th quantum dot (NV(j+1)) of the (j+1)-th qubit (QUB(j+1)) following the n-bit quantum register (QUREG). Preferably, the distance (spj(j+1)) between the j-th quantum dot (NVj) of the j-th quantum bit (QUBj) of the n-bit quantum register (QUEREG) and the (j+1)-th quantum dot (NV(j+1)) of the (j+1)-th quantum bit (QUB(j+1)) following the n-bit quantum register (QUREG) is less than 50 nm and / or less than 30 nm and / or less than 20 nm and / or less than 10 nm and / or less than 5 nm and / or less than 2 nm, and / or the distance (spj(j+1)) between the j-th quantum dot (NVj) of the j-th quantum bit (QUBj) of the n-bit quantum register (QUEREG) and the (j+1)-th quantum dot (NV(j+1)) of the (j+1)-th quantum bit (QUB(j+1)) following the n-bit quantum register (QUREG) is between 30 nm and 2 nm and / or less than 10 nm and / or less than 5 nm and / or less than 2 nm.

[0316] In this chain, the first quantum dot (NV1) has a first distance (sp12), which is its successor distance. Preferably, the first spatial distance (sp12) between the first quantum dot (NV1) of the first qubit (QUB1) of the quantum register (QUREG) and the second quantum dot (NV2) of the second qubit (QUB2) following the quantum register (QUREG) is very small, such that the magnetic field of the second quantum dot (NV2) of the second qubit (QUB2) following the n-bit quantum register (QUREG) at least temporarily affects the behavior of the first quantum dot (NV1) of the first qubit (QUB1) of the n-bit quantum register (QUREG), and / or the magnetic field of the first quantum dot (NV1) of the first qubit (QUB1) of the n-bit quantum register (QUREG) at least temporarily affects the behavior of the second quantum dot (NV2) of the second qubit (QUB2) following the n-bit quantum register (QUREG). Preferably, for this purpose, the distance (sp12) between the first quantum dot (NV1) of the first quantum bit (QUB1) of the n-bit quantum register (QUREG) and the second quantum dot (NV2) of the second quantum bit (QUB2) following the n-bit quantum register (QUREG) is less than 50 nm and / or less than 30 nm and / or less than 20 nm and / or less than 10 nm and / or less than 5 nm and / or less than 2 nm, and / or the distance (sp12) between the first quantum dot (NV1) of the first quantum bit (QUB1) of the n-bit quantum register (QUREG) and the second quantum dot (NV2) of the second quantum bit (QUB2) following the n-bit quantum register (QUREG) is between 30 nm and 2 nm and / or less than 10 nm and / or less than 5 nm and / or less than 2 nm.

[0317] In this chain, the nth quantum dot (NVn) has a distance (sp(n-1)n), which is its leading distance. Preferably, the spatial distance (sp(n-1)n) between the nth quantum dot (NVn) of the nth quantum bit (QUBn) of the quantum register (QUREG) and the (n-1)th quantum dot (NV(n-1)) of the preceding (n-1)th quantum bit (QUB(n-1)) of the quantum register (QUREG) is very small, such that the magnetic field of the (n-1)th quantum dot (NV(n-1)) of the preceding (n-1)th quantum bit (QUB(n-1)) of the nth quantum bit (QUREG) of the quantum register (QUREG) at least temporarily affects the behavior of the nth quantum dot (NVn) of the nth quantum bit (QUBn) of the nth quantum bit (QUREG) of the quantum register (QUREG), and / or the magnetic field of the nth quantum dot (NVn) of the nth quantum bit (QUBn) of the nth quantum bit (QUREG) of the quantum register (QUREG) at least temporarily affects the behavior of the (n-1)th quantum dot (NV(n-1)) of the preceding (n-1)th quantum bit (QUB(n-1)) of the quantum register (QUREG). Preferably, the distance (sp(n-1)n) between the nth quantum dot (NVn) of the nth quantum bit (QUBn) of the nth quantum register (QUREG) and the (n-1)th quantum dot (NV(n-1)) of the preceding (n-1)th quantum bit (QUB(n-1)) of the nth quantum register (QUREG) is less than 50 nm and / or less than 30 nm and / or less than 20 nm and / or less than 10 nm and / or less than 5 nm and / or less than 2 nm, and / or the distance (sp(n-1)n) between the nth quantum dot (NVn) of the nth quantum bit (QUBn) of the nth quantum register (QUREG) and the (n-1)th quantum dot (NV(n-1)) of the preceding (n-1)th quantum bit (QUB(n-1)) of the nth quantum register (QUREG) is between 30 nm and 2 nm and / or less than 10 nm and / or less than 5 nm and / or less than 2 nm.

[0318] In this chain, the first quantum dot (NV1) can have a distance (sp1n) associated with the nth quantum dot (NVn), i.e., its chain length. Preferably, this spatial distance (sp1n) between the first quantum dot (NV1) of the first qubit (QUB1) of the quantum register (QUREG) at the beginning of the chain and the nth quantum dot (NVn) of the nth qubit (QUBn) of the nth quantum register (QUREG) at the end of the chain is such that the magnetic field of the first quantum dot (NV1) of the first qubit (QUB1) of the nth quantum register (QUREG) at the beginning of the chain can no longer significantly affect the nth quantum dot (NVn) of the nth quantum register (QUREG) at the end of the chain. The behavior of the nth quantum dot (NVn) of the bit (QUBn), and / or the magnetic field of the nth quantum dot (NVn) of the nth quantum bit (QUBn) of the nth quantum register (QUREG) at the end of the chain, can no longer directly affect the behavior of the first quantum dot (NV1) of the first quantum bit (QUB1) of the nth quantum register (QUREG) at the beginning of the chain, but can only produce the above effect with the help of the n-2 quantum dots (NV2 to NV(n-1)) between the first quantum dot (NV1) and the nth quantum dot (NVn).

[0319] Therefore, the principles described below for a three-bit quantum register can be applied to an n-bit quantum register with more than three qubits (n>3). Therefore, these principles will not be described in detail for multi-bit quantum registers, as they will be apparent to those skilled in the art from the following description of a three-bit quantum register. Such multi-bit quantum registers are explicitly included in the claims.

[0320] As previously described, a three-qubit quantum register is a quantum register having at least a third quantum bit (QUB3). Preferably, the first quantum dot type of the first quantum dot (NV1) of the first quantum bit (QUB1) and the second quantum dot type of the second quantum dot (NV2) of the second quantum bit (QUB2) are equivalent to the third quantum dot type of the third quantum dot (NV3) of the third quantum bit (QUB3).

[0321] Preferably, in such an exemplary three-qubit quantum register, the first qubit (QUB1), the second qubit (QUB2), and the third qubit (QUB3) share a common substrate (D). Hereinafter, the quantum dot (NV) of the third qubit (QUB3) will be referred to as the third quantum dot (NV3). Preferably, the horizontal line (LH) of the third qubit (QUB3) is the first horizontal line (LH1), and is therefore shared with the horizontal lines (LH) of the second qubit (QUB2) and the first qubit (QUB1). Hereinafter, the vertical line (LV) of the third qubit (QUB3) will be referred to as the third vertical line (LV3). As mentioned earlier, other arrangements besides this arrangement of qubits along the first horizontal line (LH1) are conceivable.

[0322] In order to transmit quantum information dependencies, it is useful if the magnetic field of the second quantum dot (NV2) of the second qubit (QUB2) can at least temporarily affect the behavior of the third quantum dot (NV3) of the third qubit (QUB3), and / or if the magnetic field of the third quantum dot (NV3) of the third qubit (QUB3) can at least temporarily affect the behavior of the second quantum dot (NV2) of the second qubit (QUB2). This produces the quantum information dependencies of the quantum dots, referred to below as the quantum bus, used to transmit the quantum information of the quantum bus (QUBUS) thus created.

[0323] To achieve these dependencies, it is useful if the spatial distance (sp23) between the third quantum dot (NV3) of the third qubit (QUB3) and the second quantum dot (NV2) of the second qubit (QUB2) is very small, such that the magnetic field of the second quantum dot (NV2) of the second qubit (QUB2) can at least temporarily affect the behavior of the third quantum dot (NV3) of the third qubit (QUB3), and / or the magnetic field of the third quantum dot (NV3) of the third qubit (QUB3) can at least temporarily affect the behavior of the second quantum dot (NV2) of the second qubit (QUB2).

[0324] To achieve this coupling, it is useful if the spatial distance (sp23) between the third quantum dot (NV3) of the third qubit (QUB3) and the second quantum dot (NV2) of the second qubit (QUB2) is less than 50 nm and / or less than 30 nm and / or less than 20 nm and / or less than 10 nm and / or less than 5 nm and / or less than 2 nm, and / or if the spatial distance (sp23) between the third quantum dot (NV3) of the third qubit (QUB3) and the second quantum dot (NV2) of the second qubit (QUB2) is between 30 nm and 2 nm and / or less than 10 nm and / or less than 5 nm and / or less than 2 nm.

[0325] As mentioned above, the qubits (QUB) of the quantum register (QUREG) are preferably arranged in a one-dimensional lattice. Arrangement in a two-dimensional lattice is possible, but not very advantageous, because then the current equations cannot be solved unambiguously and without difficulty.

[0326] Preferably, the qubits (QUB) of the quantum register (QUREG) are thus arranged as a one-dimensional or two-dimensional lattice of a unit lattice of one or more quantum dot (NV) arrays, the lattice having a second spacing (sp12) as a lattice constant for the distance between the individual unit lattices.

[0327] Construction of an Inhomogeneous Quantum Register (IHQUREG)

[0328] Now, unlike the uniform quantum register (QUREG), the non-uniform quantum register (IHQUEG) is composed of quantum dots (NV) of different quantum dot types.

[0329] For example, one quantum dot (NV) of a non-uniform quantum register (IHQUEG) can be an NV center (NV) in diamond of a first quantum dot type, and another quantum dot (NV) of a non-uniform quantum register (IHQUREG) can be a SiV center in diamond of a second quantum dot type.

[0330] Therefore, the non-uniform quantum register (IHQUREG) preferably includes a first quantum bit (QUB1) and at least a second quantum bit (QUB2), wherein the first quantum dot type of the first quantum dot (NV1) of the first quantum bit (QUB1) of the non-uniform quantum register (IHQUREG) is different from the second quantum dot type of the second quantum dot (NV2) of the second quantum bit (QUB2) of the non-uniform quantum register (IHQUREG).

[0331] However, preferably, the substrate (D) is shared for both the first qubit (QUB1) and the second qubit (QUB2). Again, in the following text, the quantum dot (NV) of the first qubit (QUB1) of the non-uniform quantum register (IHQUREG) is referred to as the first quantum dot (NV1) of the non-uniform quantum register (IHQUREG), and the quantum dot (NV) of the second qubit (QUB2) of the non-uniform quantum register (IHQUREG) is referred to as the second quantum dot (NV2) of the non-uniform quantum register (IHQUREG).

[0332] Similarly, again, the horizontal line (LH) of the first qubit (QUB1) of the non-uniform quantum register (IHQUAREG) is referred to as the first horizontal line (LH1) below, and the horizontal line (LH) of the second qubit (QUB2) is referred to as the second horizontal line (LH2).

[0333] Similarly, the vertical line (LV) of the first qubit (QUB1) of the non-uniform quantum register (IHQUREG) is preferably referred to hereinafter as the first vertical line (LV1), and the second vertical line (LV) of the second qubit (QUB2) is preferably referred to hereinafter as the second vertical line (LV2). For example, it is useful if the first horizontal line (LH1) is equivalent to the second horizontal line (LH1). Alternatively, it is useful, for example, if the first vertical line (LV1) is equivalent to the second vertical line (LV2).

[0334] Preferably, the first horizontal line (LH1) and the second horizontal line (LH2), as well as the first vertical line (LV) and the second vertical line, are substantially composed of isotopes without magnetic moment μ. In this case, it essentially means that the proportion K of the isotopes with magnetic moments of the elements that form part of one or more lines relative to the total proportion K of 100% of the elements that form part of these lines. 1G Relative to the total natural proportion K shown in the table above 1G The ratio of the magnetic moment of an isotope of an element that is a component of one or more of these lines to 100% of that element that is a component of one or more of these lines, K. 1G Therefore, the ratio K 1G The total natural proportion K of the elements in question in one or more lines in the influence region of paramagnetic perturbation (NV) used as quantum dots (NV) and / or nuclear spin used as nuclear quantum dots (CI). 1G Smaller by 50%, better by 20%, better by 10%, better by 5%, better by 2%, better by 1%, better by 0.5%, better by 0.1%.

[0335] Preferably, the non-uniform quantum register (IHQUREG) is designed such that the magnetic field of the second quantum dot (NV2) of the second quantum bit (QUB2) of the non-uniform quantum register (IHQUREG) at least temporarily affects the behavior of the first quantum dot (NV1) of the first quantum bit (QUB1) of the non-uniform quantum register (IHQUREG), and / or the magnetic field of the first quantum dot (NV1) of the first quantum bit (QUB1) of the non-uniform quantum register (IHQUREG) at least temporarily affects the behavior of the second quantum dot (NV2) of the second quantum bit (QUB2) of the non-uniform quantum register (IHQUREG).

[0336] Therefore, preferably again, the spatial distance (sp12) between the first quantum dot (NV1) of the first qubit (QUB1) of the non-uniform quantum register (IHQUREG) and the second quantum dot (NV2) of the second qubit (QUB2) of the non-uniform quantum register (IHQUREG) is chosen to be very small, such that the magnetic field of the second quantum dot (NV2) of the second qubit (QUB2) of the non-uniform quantum register (IHQUREG) at least temporarily affects the behavior of the first quantum dot (NV1) of the first qubit (QUB1) of the non-uniform quantum register (IHQUREG), and / or the magnetic field of the first quantum dot (NV1) of the first qubit (QUB1) of the non-uniform quantum register (IHQUREG) at least temporarily affects the behavior of the second quantum dot (NV2) of the second qubit (QUB2) of the non-uniform quantum register (IHQUREG). Preferably, the second distance (sp12) between the first quantum dot (NV1) of the first quantum bit (QUB1) of the non-uniform quantum register (IHQUREG) and the second quantum dot (NV2) of the second quantum bit (QUB2) of the non-uniform quantum register (IHQUREG) is less than 50 nm and / or preferably less than 30 nm and / or preferably less than 20 nm and / or preferably less than 10 nm and / or preferably less than 5 nm and / or preferably less than 2 nm, and / or the second distance (sp12) between the first quantum dot (NV1) of the first quantum bit (QUB1) of the non-uniform quantum register (IHQUREG) and the second quantum dot (NV2) of the second quantum bit (QUB2) of the non-uniform quantum register (IHQUREG) is preferably between 30 nm and 2 nm and / or better less than 10 nm and / or better less than 5 nm and / or better less than 2 nm.

[0337] Preferably, the qubits of the non-uniform quantum register (IHQUIG) consist of a unit lattice of an array of two or more qubits arranged in a one-dimensional or two-dimensional dot matrix for each unit lattice.

[0338] Preferably, the qubits of the non-uniform quantum register (IHQUREG) are arranged in a one-dimensional or two-dimensional lattice of a unit lattice consisting of an array of more than one qubit, with a second spacing (sp12) serving as the lattice constant for each unit lattice.

[0339] Construction of a nuclear quantum register (CCQUEREG)

[0340] Another aspect of this concept involves a nucleus-nucleus quantum register (CCQUEREG). A CCQUEREG comprises a first nucleus qubit (CQUB1) and at least a second nucleus qubit (CQUB2) as previously described. It is important to note that the nucleus quantum dots (CI1, CI2) of the nucleus qubits (CQUB1, CQUB2) should be positioned close to each other so that they can interact with each other without the need for quantum dots (NVs) (e.g., NV centers (NV) in the case of diamond as the substrate (D) or G centers in the case of silicon as the substrate (D)). Due to the difficulty of such a dense arrangement, the CCQUEREG is included here only for completeness. Currently, it can only be fabricated through a random process where the nucleus quantum dots (CI1, CI2) are just close enough to each other. It is also conceivable to use STM to arrange the isotopes of subsequent nucleus quantum dots side-by-side on the surface of a substrate, for example, as dense lines of such isotopes, and then deposit the surrounding material.

[0341] Nevertheless, such nuclear quantum registers (CCQUEREGs) can now be manufactured in very low quantities by implanting isotopes with nuclear spins into a substrate (D).

[0342] If diamond is used as the substrate (D), then several [devices] can be implanted. 13 Chemical compounds containing carbon atoms, such as organic molecules. This makes 13 The carbon isotopes are brought close together. If the molecule also includes nitrogen atoms, the quantum ALU (QUALU) as described above can be readily fabricated in diamond as a substrate (D) in this manner. The substrate (D) is preferably prepared in advance by placing alignment marks. This can be done by photolithography, and more specifically by electron and / or ion beam lithography. The molecules are implanted, and then a temperature step is performed to solidify the crystal, such as the diamond substrate. Later in this process, the position of the generated quantum dots (e.g., NV centers) is optically detected by irradiation with “green light,” in the case of NV centers in diamond, where the NV centers are excited to red fluorescence. Preferably, this is done in an STED microscope. This allows for positioning with sufficient accuracy relative to the previously applied alignment marks. Preferably, based on the positioning results, horizontal and vertical lines (LV, LH) are fabricated, for example, by means of electron beam lithography.

[0343] This also applies to the substrate (D) and / or other materials of the paramagnetic interference center.

[0344] As previously described, the substrate (D) is typically shared for both the first core qubit (CQUB1) and the second core qubit (CQUB2). The core quantum dot (CI) of the first core qubit (CQUB1) is hereinafter referred to as the first core quantum dot (CI1), and the core quantum dot (CI) of the second core qubit (CQUB2) is hereinafter referred to as the second core quantum dot (CI2). Similar to the registers previously described, the horizontal line (LH) of the first core qubit (CQUB1) is hereinafter referred to as the first horizontal line (LH1), and the horizontal line (LH) of the second core qubit (CQUB2) is hereinafter referred to as the first horizontal line (LH1). The vertical line (LV) of the first core qubit (CQUB1) is hereinafter referred to as the first vertical line (LV1), and the vertical line (LV) of the second core qubit (CQUB2) is hereinafter referred to as the second vertical line (LV2).

[0345] If the nuclear quantum dots (CI1, CI2) of the nuclear quantum register (CCQUREG) are sufficiently close to each other, the magnetic field of the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) can at least temporarily affect the behavior of the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1), and / or the magnetic field of the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) can at least temporarily affect the behavior of the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2). This can be used for quantum operations.

[0346] Therefore, the spatial distance (sp12) between the first quantum dot (CI1) of the first core qubit (CQUB1) and the second quantum dot (CI2) of the second core qubit (CQUB2) should preferably be very small, such that the magnetic field of the second quantum dot (CI2) of the second core qubit (CQUB2) can at least temporarily affect the behavior of the first quantum dot (CI1) of the first core qubit (CQUB1), and / or the magnetic field of the first quantum dot (CI1) of the first core qubit (CQUB1) can at least temporarily affect the behavior of the second quantum dot (CI2) of the second core qubit (CQUB2).

[0347] Therefore, preferably, the fourth distance (sp12') between the first core quantum dot (CI1) of the first core quantum bit (CQUB1) and the second core quantum dot (CI2) of the second core quantum bit (CQUB2) should be less than 100 pm and / or better less than 50 pm and / or better less than 30 pm and / or better less than 20 pm and / or better less than 10 pm.

[0348] Where possible, the nuclear qubits of a nuclear-nuclear quantum register (CCQUREG) should be arranged in a one-dimensional or two-dimensional lattice.

[0349] Preferably, the nuclear qubits of the core-nuclear quantum register (CCQUREG) are arranged in a one-dimensional or two-dimensional lattice of one or more nuclear qubit arrays with a second spacing (sp12) that is a lattice constant of the respective unit lattice. Since the quantum dots (NVs) are typically appropriately asymmetrically positioned relative to the one-dimensional or two-dimensional lattice of nuclear quantum dots (CIs), the coupling energy of a pair of nuclear quantum dots (CI1, CI2) in each one-dimensional or two-dimensional nuclear quantum dot lattice with quantum dots (NVs) is different for each pair. This allows for the selection or addressing of individual pairs of nuclear quantum dots (CIs) and quantum dots (NVs) that are different from each other. This allows quantum operations to be restricted to the relevant pairs of nuclear quantum dots (CIs) and quantum dots (NVs).

[0350] Nuclear-nuclear quantum registers (CCQUREGs) can also be fabricated as non-uniform. Such non-uniform CCQUREGs are characterized in that at least one nuclear quantum dot has an isotope different from that of the other nuclear quantum dot in the CCQUREG. For example, a CCQUREG in diamond, the material of the substrate (D), can have an isotope as the first nuclear quantum dot (CI1). 13 C isotopes and as a second nuclear quantum dot (CI2) 15 Ni isotopes interact with each other when they are close enough.

[0351] Such core-to-core quantum registers (CCQUREGs) can be cascaded. The two-bit core-to-core quantum registers (CCQUREGs) described above are cascaded along a horizontal line (LH) shared by the two core qubits (CQUB1, CQUB2). Instead of horizontal cascading, vertical cascading along a vertical line is also conceivable. The horizontal and vertical lines then interchange functions. Two-dimensional cascading is also possible, corresponding to combinations of these possibilities.

[0352] Instead of a two-core-nuclear quantum register (CCQUREG), it is also conceivable to cascade n core qubits (CQUB1 to CQUBn). As an example, a three-core-nuclear quantum register (CCQUREG) is shown here, extending along a horizontal line (LH). The same applies to subsequent core qubits (QUB4 to QUBn). Of course, the core-nuclear quantum register (CCQUREG) can extend in other directions by m core qubits (CQUB0 to CQUB(m-1)). For simplicity, the text provided here is limited to positive values ​​of indices from 1 to n.

[0353] By cascading n nuclear qubits (CQUB1 to CQUBn) along an exemplary one-dimensional line within the n-bit nuclear quantum register (CCQUREG), such as along the vertical line (LV) or the horizontal line (LH), the spatial distance (sp1n) between the first nuclear quantum dot (CI1) of the first nuclear qubit (QUB1) of the n-bit nuclear quantum register (QUREG) and the nth nuclear quantum dot (CIn) of the nth nuclear qubit (CQUBn) of the n-bit nuclear quantum register (CCQUREG) can be very large, such that the first nuclear quantum dot (CI1) of the first nuclear qubit (CQUB1) of the n-bit nuclear-nuclear quantum register (CCQUREG) is no longer coupled to or can be directly entangled with the nth nuclear quantum dot (CIn) of the nth nuclear qubit (CQUBn) of the n-bit nuclear-nuclear quantum register (CCQUREG). For simplicity, we assume that n nuclear quantum dots (CI1 to CIn) out of n nuclear quantum dots (CQUB1 to CQUBn) are countably arranged along the one-dimensional line. This one-dimensional line can also be curved or angled. Therefore, in this example, the n nuclear quantum dots (CI1 to CIn) and their respective nuclear qubits (CQUB1 to CQUBn) are referred to as a chain of n nuclear quantum dots (CI1 to CIn) starting from the first nuclear quantum dot (CI1) and ending at the nth nuclear quantum dot (CIn). Within this chain of n nuclear quantum dots (CI1 to CIn), the nuclear quantum dots (CI1 to CIn) of the nucleus-nucleus quantum register (CCQUREG) and their respective nuclear qubits (CQUB1 to CQUBn) are countable and can therefore be consecutively numbered from 1 to n using positive integers.

[0354] Therefore, in the chain, the j-th core quantum dot (CIj) is preceded by the (j-1)-th core quantum dot (CI(j-1)), which is hereinafter referred to as the leading core quantum dot (CI(j-1)). Accordingly, also generally in the chain, the (j-1)-th core qubit (CQUBj) having the j-th core quantum dot (CIj) is preceded by the (j-1)-th core quantum dot (CI(j-1)) of a core-core quantum register (CCQUREG) having the (j-1)-th core qubit (CQUB(j-1)), which is hereinafter referred to as the leading core qubit (CQUB(j-1)).

[0355] Therefore, in the chain, the j-th core quantum dot (CIj) is followed by the (j+1)-th core quantum dot (CI(j+1)), which is hereinafter referred to as the succeeding core quantum dot (CI(j+1)). Accordingly, in the chain, the (j+1)-th core qubit (CQUBj) having the j-th core quantum dot (CIj) is followed by the (j+1)-th core qubit (CQUB(j+1)) having the (j+1)-th core quantum dot (CI(j+1)), which is hereinafter referred to as the succeeding core qubit (CQUB(j-1)). Here, with respect to the exemplary chain, the subscript j is any positive integer satisfying 1<j<n, where n is a positive integer satisfying n>2.

[0356] In this chain, the j-th nucleus quantum dot (CIj) has a distance (sp'(j-1)j), which is its leading distance. Preferably, the spatial distance (sp'(j-1)j) between the j-th nucleus quantum dot (CQUBj) of the n-bit nucleus-nucleus quantum register (CCQUREG) and the (j-1)-th nucleus quantum dot (CI(j-1)) of the preceding (j-1)-th nucleus quantum bit (CQUB(j-1)) of the nucleus-nucleus quantum register (CCQUREG) is very small, making the (j-1)-th nucleus quantum dot (CQUB(j-1)) of the preceding (j-1)-th nucleus quantum bit (CQUB(j-1)) of the n-bit nucleus-nucleus quantum register (CCQUREG) very small. The magnetic field of (CI(j-1)) at least temporarily affects the behavior of the j-th nucleus quantum dot (CIj) of the j-th nucleus qubit (CQUBj) of the n-bit nucleus-nucleus quantum register (CCQUREG), and / or the magnetic field of the j-th nucleus quantum dot (CIj) of the j-th nucleus qubit (CQUBj) of the n-bit nucleus-nucleus quantum register (CCQUREG) at least temporarily affects the behavior of the (j-1)-th nucleus quantum dot (CI(j-1)) of the preceding (j-1)-th nucleus qubit (CQUB(j-1)) of the nucleus-nucleus quantum register (CCQUREG). Preferably, for this purpose, the distance (sp'(j-1)1) between the j-th nuclear quantum dot (CIj) of the j-th nuclear qubit (CQUB1) of the n-bit nuclear-nuclear quantum register (CCQUREG) and the (j-1)-th nuclear quantum dot (CI(j-1)) of the preceding (j-1)-th nuclear qubit (CQUB(j-1)) of the n-bit nuclear quantum register (CCQUREG) is less than 200 pm and / or better less than 100 pm and / or better less than 50 pm and / or better less than 30 pm and / or better less than 20 pm and / or better less than 10 pm, and / or The distance (sp'(j-1)j) between the j-th nuclear quantum bit (CQUBj) of the n-bit nuclear quantum register (CCQUREG) and the (j-1)-th nuclear quantum bit (CQUB(j-1)) of the n-bit nuclear quantum register (CCQUREG) (CI(j-1)) is between 200pm and 2pm and / or better between 100pm and 5pm and / or better less than 50pm and / or better less than 30pm and / or better less than 20pm and / or better less than 10pm and 2pm.

[0357] For example, it can be achieved by using the substrate (D) 12 A single diamond on the surface of a C diamond 13 C atoms are adjacent to each other. 13 To create carbon atoms by displacing them at such a distance. 13 C isotope chains, which were subsequently processed using CVD technology.12 C-layer coverage and stabilization. Then, the 13 C atom chain 13 C atoms are coupled together.

[0358] In this chain, the j-th nuclear quantum dot (CIj) also has a distance (sp'j(j+1)), i.e., its successor distance. Preferably, the spatial distance (sp'j(j+1)) between the j-th nuclear quantum dot (CIj) of the j-th nuclear qubit (CQUBj) of the nuclear-nuclear quantum register (CCQUREG) and the (j+1)-th nuclear quantum dot (CI(j+1)) of the (j+1)-th nuclear qubit (CQUB(j+1)) following the nuclear-nuclear quantum register (CCQUREG) is therefore very small, making the (j+1)-th nuclear quantum dot (CIj) of the (j+1)-th nuclear qubit (CQUB(j+1)) following the n-bit nuclear-nuclear quantum register (CCQUREG) very small. The magnetic field of CI(j+1) affects, at least temporarily, the behavior of the j-th nucleus quantum dot (CIj) of the j-th nucleus qubit (CQUBj) of the n-bit nucleus-nucleus quantum register (CCQUREG), and / or the magnetic field of the j-th nucleus quantum dot (CIj) of the j-th nucleus qubit (CQUBj) of the n-bit nucleus-nucleus quantum register (CCQUREG) affects, at least temporarily, the behavior of the (j+1)-th nucleus quantum dot (CI(j+1)) of the (j+1)-th nucleus qubit (CQUB(j+1)) following the n-bit nucleus-nucleus quantum register (CCQUREG). Preferably, for this purpose, the distance (sp'j(j+1)) between the j-th nuclear quantum dot (CIj) of the j-th nuclear quantum bit (CQUB1) of the n-bit nuclear quantum register (CCQUREG) and the (j+1)-th nuclear quantum dot (CI(j+1)) of the (j+1)-th nuclear quantum bit (CQUB(j+1)) following the n-bit nuclear-nuclear quantum register (CCQUREG) is less than 200 pm and / or less than 100 pm and / or less than 50 pm and / or less than 20 pm and / or less than 10 pm and / or less than 10 pm. The distance (sp'j(j+1)) between the j-th core quantum bit (CQUBj) of the n-bit core quantum register (CCQUREG) and the (j+1)-th core quantum bit (CQUB(j+1)) of the following n-bit core-nuclear quantum register (CCQUREG) is between 200 pm and 2 pm and / or less than 100 pm and / or less than 50 pm and / or less than 20 pm.

[0359] In this chain, the first nuclear quantum dot (CI1) has a first distance (sp'12), which is its successor distance. Preferably, the first spatial distance (sp'12) between the first nuclear quantum dot (CI1) of the first nuclear qubit (CQUB1) of the n-bit nuclear quantum register (CCQUREG) and the second nuclear quantum dot (CI2) of the subsequent, typically second nuclear qubit (CQUB2), of the n-bit nuclear quantum register (CCQUREG) is so small that the magnetic field of the second nuclear quantum dot (CI2) of the subsequent second nuclear qubit (CQUB2) of the n-bit nuclear quantum register (CCQUREG) at least temporarily affects the behavior of the first nuclear quantum dot (CI1) of the first nuclear qubit (CQUB1) of the n-bit nuclear quantum register (CCQUREG), and / or the magnetic field of the first nuclear quantum dot (CI1) of the first nuclear qubit (CQUB1) of the n-bit nuclear quantum register (CCQUREG) at least temporarily affects the behavior of the second nuclear quantum dot (CI2) of the subsequent second nuclear qubit (CQUB2) of the n-bit nuclear quantum register (CCQUREG). Preferably, the distance (sp'12) between the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) of the n-bit core-nuclear quantum register (CCQUREG) and the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) following the n-bit core-nuclear quantum register (CCQUREG) is less than 200 pm and / or less than 100 pm and / or less than 50 pm and / or less than 20 pm and / or less than 10 pm and / or less than 5 pm and / or less than 2 pm, and / or the distance (sp'12) between the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) of the n-bit core-nuclear quantum register (CCQUREG) and the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) following the n-bit core-nuclear quantum register (CCQUREG) is between 200 pm and 2 pm and / or less than 100 pm and / or less than 50 pm and / or less than 20 pm.

[0360] In this chain, the nth nucleus quantum dot (CIn) has a distance (sp'(n-1)n), which is its leading distance. Preferably, the spatial distance (sp'(n-1)n) between the nth nucleus quantum dot (CIn) of the nth nucleus quantum bit (CQUBn) of the nth nucleus quantum register (CCQUREG) and the (n-1)th nucleus quantum dot (CI(n-1)) of the (n-1)th nucleus quantum bit (CQUB(n-1)) preceding the nth nucleus quantum register (CCQUREG) is very small, making the (n-1)th nucleus quantum dot (CQUB(n-1)) of the (n-1)th nucleus quantum bit (CQUB(n-1)) preceding the nth nucleus quantum register (CCQUREG) very small. The magnetic field of (CI(n-1)) at least temporarily affects the behavior of the nth nucleus quantum dot (CIn) of the nth nucleus quantum bit (CQUBn) of the nth nucleus quantum register (CCQUREG), and / or the magnetic field of the jth nucleus quantum dot (CIn) of the nth nucleus quantum bit (CQUBn) of the nth nucleus quantum register (CCQUREG) at least temporarily affects the behavior of the (n-1)th nucleus quantum dot (CI(n-1)) of the preceding (n-1)th nucleus quantum bit (CQUB(n-1)) of the nth nucleus quantum register (CCQUREG). Preferably, the distance (sp'(n-1)1) between the nth nucleus quantum dot (CIn) of the nth nucleus quantum bit (CQUBn) of the nth nucleus quantum register (CCQUREG) and the (n-1)th nucleus quantum dot (CI(n-1)) of the preceding (n-1)th nucleus quantum bit (CQUB(n-1)) of the nth nucleus quantum register (CCQUREG) is less than 200 pm and / or less than 100 pm and / or less than 50 pm and / or less than 20 pm and / or less than 10 pm and / or less than 5 pm and / or less than 2 pm, and / or The distance (sp'(n-1)n) between the nth nuclear quantum dot (CIn) of the nth nuclear qubit (CQUBn) of the nth nuclear quantum register (CCQUREG) and the (n-1)th nuclear quantum dot (CI(n-1)) of the preceding (n-1)th nuclear qubit (CQUB(n-1)) of the nth nuclear quantum register (CCQUREG) is between 200 pm and 2 pm and / or less than 100 pm and / or less than 50 pm and / or less than 20 pm and / or less than 10 pm and / or less than 5 pm and / or less than 2 pm.

[0361] In this chain, the first nuclear quantum dot (CI1) can have a distance (sp'1n) associated with the nth nuclear quantum dot (CIn), i.e., its chain length. For this purpose, it is preferable that the spatial distance (sp'1n) between the first nuclear quantum dot (CI1) of the nth nuclear quantum register (CCQUREG) at the beginning of the chain (typically the first nuclear qubit (QUB1)) and the nth nuclear quantum dot (CIn) of the nth nuclear-nuclear quantum register (CCQUREG) at the end of the chain (typically the nth qubit (QUBn)) is very large, such that the magnetic field of the first nuclear-nuclear quantum dot (CI1) of the nth nuclear-nuclear quantum register (CCQUREG) at the beginning of the chain (typically the first nuclear-nuclear quantum bit (CQUB1)) can no longer significantly and directly affect the nth nuclear quantum register (CCQ) at the end of the chain. The behavior of the nth quantum dot (CIn) of the nth nuclear qubit (CQUBn) in the chain UREG, and / or the magnetic field of the nth quantum dot (CIn) of the nth nuclear qubit (CQUBn) at the end of the chain, can no longer significantly and directly affect the behavior of the first quantum dot (CI1) of the first nuclear qubit (CQUB1) in the nth nuclear qubit (CCQUREG) at the beginning of the chain, but can only be produced with the help of the n-2 quantum dots (CI2 to CI(n-1)) between the first quantum dot (CI1) and the nth quantum dot (CIn).

[0362] Therefore, the principles described below for a three-bit nucleus-nucleus quantum register can be applied to nucleus-nucleus quantum registers (CCQUREG) with more than three nucleus quantum dots (CI1 to CIn). Therefore, these principles will not be described in detail for n-bit nucleus-nucleus quantum registers (CCQUREG) with n>3, as they will be obvious to those skilled in the art from the following description of the three-bit nucleus-nucleus quantum register. Such multi-bit nucleus-nucleus quantum registers are explicitly included in the claims.

[0363] The three-core-core quantum register (CCQUREG) is a core-core quantum register (CCQUREG) having at least a third core quantum bit (CQUB3) as previously described. Preferably, the first core quantum dot type of the first core quantum dot (CI1) of the first core quantum bit (CQUB1) and the second core quantum dot type of the second core quantum dot (CI2) of the second core quantum dot (CI2) of the third core quantum bit (CQUB3) are equivalent to the third core quantum dot type of the third core quantum dot (CI3) of the third core quantum bit (CQUB3).

[0364] Preferably, in this exemplary three-core quantum register, the substrate (D) is shared for the first core quantum dot (CI1), the second core quantum dot (CI2), and the third quantum dot (CI3). Typically, the core quantum dot (CI) of the third core quantum bit (CQUB3) will be referred to hereinafter as the third core quantum dot (CI3). Preferably, the horizontal line (LH) of the third core quantum bit (CQUB3) is the first horizontal line (LH1), and is thus shared with the horizontal line (LH) of the second core quantum bit (CQUB2) and the horizontal line (LH) of the first core quantum bit (CQUB1). The vertical line (LV) of the third core quantum bit (CQUB3) will be referred to hereinafter as the third vertical line (LV3). As mentioned earlier, other arrangements are conceivable as alternatives to this arrangement of the core quantum bits along the first horizontal line (LH1).

[0365] Now, in order to transmit quantum information dependencies, it would be useful if the magnetic field of the second quantum dot (CI2), typically the second-core qubit (CQUB2), could at least temporarily influence the behavior of the third quantum dot (CI3), typically the third-core qubit (CQUB3), and / or if the magnetic field of the third quantum dot (CI3), typically the third-core qubit (CQUB3), could at least temporarily influence the behavior of the second quantum dot (CI2), typically the second-core qubit (CQUB2). This results in the nuclear quantum bus, referred to below, used to transmit quantum information dependencies of the nuclear quantum dots of the nuclear quantum bus (CQUBUS) thus created.

[0366] In order to achieve these dependencies, it would be useful if the spatial distance (sp'23) between the third quantum dot (CI3) of the third core qubit (CQUB3) and the second quantum dot (CI2) of the second core qubit (CQUB2) were preferably very small, such that the magnetic field of the second quantum dot (CI2) of the second core qubit (CQUB2) could at least temporarily affect the behavior of the third quantum dot (CI3) of the third core qubit (CQUB3), and / or the magnetic field of the third quantum dot (CI3) of the third core qubit (CQUB3) could at least temporarily affect the behavior of the second quantum dot (CI2) of the second core qubit (CQUB2).

[0367] To achieve this coupling, it would be useful if the spatial distance (sp'23) between the third core quantum dot (CI3) of the third core qubit (CQUB3) and the second core quantum dot (CI2) of the typically second core qubit (CQUB2) is less than 200 pm and / or less than 100 pm and / or less than 50 pm and / or less than 20 pm and / or less than 10 pm and / or less than 5 pm and / or less than 2 pm, and / or if the spatial distance (sp'23) between the third core quantum dot (CI3) of the typically third core qubit (CQUB3) and the second core quantum dot (CI2) of the typically second core qubit (CQUB2) is between 200 pm and 2 pm and / or less than 100 pm and / or less than 50 pm and / or less than 20 pm and / or less than 10 pm and / or less than 5 pm and / or less than 2 pm.

[0368] As mentioned above, the nuclear quantum dots (CI) of the core-nuclear quantum register (CCQUREG) are preferably arranged in a one-dimensional lattice. A two-dimensional lattice arrangement is possible, but not very advantageous, because it would no longer be possible to solve the current equations explicitly without further effort.

[0369] Preferably, the nuclear quantum dots (CI) of the nuclear-nuclear quantum register (CCQUREG) are thus arranged in a one-dimensional or two-dimensional lattice of the unit lattice of one or more nuclear quantum dots (CI) with a second spacing (sp12') as a lattice constant for the distance between the individual unit lattices.

[0370] Construction of the nuclear-electron-nuclear-electron quantum register (CECEQUREG)

[0371] The nucleus-electron-nucleus-electron quantum register (CECEQUREG) can now be assembled from the previously described registers.

[0372] According to the present invention, as previously described, this nuclear-electron-nuclear-electron quantum register (CECEQUREG) includes a first nuclear qubit (CQUB1) and at least a second nuclear qubit (CQUB2). As previously described, the nuclear-electron-nuclear-electron quantum register (CECEQUREG) also includes a first qubit (QUB1) and at least a second qubit (QUB2). This nuclear-electron-nuclear-electron quantum register (CECEQUREG) is the simplest form of a quantum bus (QUBUS).

[0373] For simplicity, we assume that the first nuclear quantum dot (CI1) of the first nuclear qubit (CQUB1) is farther from the second nuclear quantum dot (CI2) of the second nuclear qubit (CQUB2) than the nucleus-nucleus coupling distance, and therefore the first nuclear quantum dot (CI1) is not directly coupled to the second nuclear quantum dot (CI2).

[0374] Furthermore, we assume that the first nuclear quantum dot (CI1) of the first nuclear qubit (CQUB1) is closer to the first quantum dot (NV1) of the first qubit (QUB1) than the electron-nuclear coupling distance, and therefore the first nuclear quantum dot (CI1) is directly coupled or can be directly coupled to the first quantum dot (NV1).

[0375] Furthermore, we assume that the second nuclear quantum dot (CI2) of the second nuclear qubit (CQUB2) is closer to the second quantum dot (NV2) of the second qubit (QUB2) than the electron-nuclear coupling distance, and therefore the second nuclear quantum dot (CI2) is directly coupled or can be directly coupled to the second quantum dot (NV2).

[0376] Finally, it is assumed that the first quantum dot (NV1) of the first quantum bit (QUB1) is closer to the second quantum dot (NV2) of the second quantum bit (QUB2) than the electron-electron coupling distance, and therefore the first quantum dot (NV1) is directly coupled or can be directly coupled to the second quantum dot (NV2).

[0377] Therefore, the coupling between the first quantum dot (CI1) and the second quantum dot (CI2) can only occur indirectly via the first quantum dot (NV1) and the second quantum dot (NV2).

[0378] Preferably, the first nuclear qubit (CQUB1) and the first qubit (QUB1) now form a nuclear-electron quantum register (CEQUEREG) in the form previously described, which is referred to below as the first nuclear-electron quantum register (CEQUREG1).

[0379] The second nuclear qubit (CQUB2) and the second qubit (QUB2) are preferably formed in a similar manner to those previously described, forming a nuclear-electron quantum register (CEQUREG), which is referred to below as the second nuclear-electron quantum register (CEQUREG2).

[0380] Theoretically, the first nuclear qubit (CQUB1) and the second nuclear qubit (CQUB2) can form a core-nuclear quantum register (CCQUREG) according to the corresponding explanation above. However, in most cases, this is not the case. For simplicity, we assume here that they will not form, because the nucleus-nucleus coupling range is much smaller than the electron-electron coupling range.

[0381] More importantly, preferably, as previously described, the first qubit (QUB1) and the second qubit (CQUB2) form an electron-electron quantum register (QUREG), because this enables the transmission of the dependency between the first core-electron quantum register (CEQUREG1) and the second core-electron quantum register (CEQUREG2). The electron-electron coupling range between the first quantum dot (NV1) of the first qubit (QUB1) of one electron-electron quantum register (QUREG) and the second quantum dot (NV2) of the second qubit (QUB2) of that electron-electron quantum register (QUREG) is generally greater than the nucleus-nucleus coupling distance between the first core quantum dot (CI1) of the first core quantum bit (CQUB1) of the other core-nucleus quantum register (CQUREG) and the second core quantum dot (CI2) of the second core quantum bit (CQUB2) of the nucleus-nucleus quantum register (CQUREG). Therefore, due to this higher electron-electron coupling range, the electron-electron quantum register (QUREG) can perform the functions of a data bus in a conventional computer. Therefore, an electron-electron quantum register (QUREG) can also be replaced by a closed chain of n-1 electron-electron quantum registers (QUREG), where n is a positive integer, and can also include branches and loops. Thus, it becomes possible to create a complex quantum network (QUNET) that interconnects different nucleus-electron quantum registers (CEQUREG2) and includes more than one n-bit electron-electron quantum register (QUREG). Here, the nth quantum dot (NVn) of the nth qubit (QUBn) may be farther from the first quantum dot (NV1) of the first qubit (QUB1) than the electron-electron coupling distance, making direct coupling between the first quantum dot (NV1) of the first qubit (QUB1) and the nth quantum dot (NVn) of the nth qubit (QUBn) no longer possible. However, due to the closed chain of n-1 two-bit electron-electron quantum registers (QUREG1 to QUREG(n-1)) between the first qubit (QUB1) and the nth qubit (QUBn), indirect coupling is possible with the help of this chain of n-1 two-bit electron-electron quantum registers (QUREG1 to QUEREG(n-1)). In such a chain of n-bit electron-electron quantum registers (NBQUREG), two consecutive two-bit electron-electron quantum registers (QUREG) always include at least one shared qubit (QUB), or more precisely, the quantum dot (NV) of that qubit (QUB).

[0382] Example of a nuclear-electron-nuclear-electron quantum register (CECEQUREG) with wide spacing

[0383] The possibility of long-distance coupling will now be illustrated in more detail using examples of two wide-spaced nucleo-electron quantum registers, the first nucleo-electron quantum register (CEQUREG1) and the nth nucleo-electron quantum register (CEQUREGn).

[0384] In this example, as described above, the first core-electron quantum register (CEQUREG1) includes a first qubit (QUB1) with a first quantum dot (NV1) and a first core qubit (CQUB1) with a first core quantum dot (CI1).

[0385] In this example, as described above, the nth nuclear electronic quantum register (CEQUREGn) includes the nth qubit (QUBn) with the nth quantum dot (NVn) and the nth nuclear qubit (CQUBn) with the nth nuclear quantum dot (CIn).

[0386] In this example, the first qubit (QUB1) and its first quantum dot (NV1) of the first core quantum register (CEQUREG1) also represent the beginning of an n-bit electron-electron quantum register (NBQUREG). We can thus conceive of this n-bit electron-electron quantum register (NBQUREG) as part of a larger quantum network (QUNET) of multiple n-bit electron-electron quantum registers (NBQUREG), where the number of qubits (QB1 to QUBn) of one n-bit electron-electron quantum register (NBQUREG) in the quantum network (QUNET) may be different from that of another n-bit electron-electron quantum register (NBQUREG) in the quantum network (QUNET).

[0387] In this example, the first qubit (QUB1) and its first quantum dot (NV1) of the first nuclear electron quantum register (CEQUREG1) are therefore also part of an n-bit electron-electron quantum register (NBQUREG) with n qubits (QUB1 to QUBn) and associated n quantum dots (NV1 to NVn). Thus, the first nuclear quantum dot (CI1) of the first nuclear electron quantum register (CEQUREG1) is connected to the n-bit electron-electron quantum register (NBQUREG), and thereby connected to the quantum network (QUNET). The idea is to perform quantum operations using the typically long coherence time of the nuclear spins of the first nuclear qubit (CI1) and the nth nuclear qubit (CIn), and to utilize the long spatial range of the coupling of the n qubits (QUB1 to QUBn) and the n quantum dots (NV1 to NVn) of the n-bit quantum register (NBQUREG) to transfer dependencies over a spatial distance larger than the nucleus-nucleus coupling range of the nuclear quantum dots (CI1, CIn).

[0388] Converting to the concept of a conventional computer system, an n-bit electron-electron quantum register (NBQUREG) and its n quantum dots (NV1 to NVn), preferably n qubits (QUB1 to QUBn), thus represent a data bus in a conventional computer. However, what is transmitted in a conventional data bus is logical value, while in a structure called a quantum bus (QUBUS), what is transmitted is dependency, allowing connected core quantum dots (CI1, CIn) to become entangled with each other over greater distances. The advantage of this is that the resulting quantum computer becomes scalable, and a greater number of quantum dots and core quantum dots can become entangled. In this process, even though these core quantum dots (CI1, CIn) can become entangled with each other using accessory quantum dots, they cannot be directly entangled due to the distance between them. In the case of very long chains, by cascading several quantum dots (NV1 to NVn), the quantum dots (NV1, NVn) can also be coupled and entangled with each other through other quantum dots (NV2 to NV(n-1)) as accessory quantum dots, although they cannot be directly entangled due to the large distance between them. This quantum bus (QUBUS) can also be called a long quantum bus (QUBUS). Because it allows for the selective control of individual quantum dots (NV1 to NVn) and individual core quantum dots as well as their pairings, scalable quantum computers can be built compared to existing technologies.

[0389] Of course, each of the n qubits (QUB1 to QUBn) and thus each of the n quantum dots (NV1 to NVn) can itself be part of, for example, one of the n nuclear electron quantum registers (CEQUREG1 to CEQUREGn). However, to understand this scheme, it is perfectly sufficient to consider the qubits (QUB2 to QUB(n-1)) located between the first qubit (QUB1) and the nth qubit (QUBn), so we limit ourselves to this here and, if necessary, ignore the nuclear electron quantum registers of the n-2 quantum dots (NV2 to NV(n-1)) existing between the first quantum dot (NV1) and the nth quantum dot (NVn).

[0390] Therefore, in its simplest case, a quantum network (QUNET) consists of a single chain of interconnected two-bit electron-electron quantum registers (QUREG), which together form an n-bit quantum register (NBQREG) with n qubits (QUB1 to QUBn) and associated n quantum dots (NV1 to NVn). For better illustration, this paper defines a quantum network (QUNET) as including at least two n-bit electron-electron quantum registers (NBQUREG).

[0391] With the aid of a quantum network (QUNET), specifically a quantum bus (QUBUS), although the nucleus-nucleus coupling range between the first nuclear quantum dot (CI1) and the nth nuclear quantum dot (CIn) of the nth nuclear electronic quantum register (CEQUREGn) is small, the first nuclear quantum dot (CI1) of the first nuclear electronic quantum register (CEQUREG1) can now also be coupled or entangled with the nth nuclear electronic quantum register (CEQUREGn), and the first nuclear quantum dot (CI1) of the first nuclear electronic quantum register (CEQUREG1) and the nth nuclear quantum dot (CIn) of the nth nuclear electronic quantum register (CEQUREGn) can also be coupled or entangled. In this case, as previously described, the quantum bus (QUBUS) of the associated quantum network (QUNET) includes n-1 interconnected two-bit electronic quantum registers (QUREG) in series in this example, all of which together form an n-bit quantum register (NBQREG). In this example, since the exemplary spatial distance between the first quantum dot (CI1) and the nth quantum dot (CIn) is assumed to be too large, the entanglement or coupling between the first quantum dot (CI1) and the nth quantum dot (CIn) does not occur through direct coupling between them, but rather through the use of an n-bit electron-electron register (NBQUREG) to transfer the dependency from the first quantum dot (CI1) to the nth quantum dot (CIn) or in the opposite direction.

[0392] By cascading the n quantum dots (NV1 to NVn) of the n qubits (QUB1 to QUBn) of the n-bit electron-electron quantum register (NBQUREG) along an exemplary one-dimensional line within the n-bit quantum register (NBQUREG), such as along the vertical line (LV) or the horizontal line (LH), the spatial distance (sp1n) between the first quantum dot (NV1) of the first quantum bit (QUB1) of the n-bit quantum register (NBQUREG) and the nth quantum dot (NVn) of the nth quantum bit (QUBn) of the n-bit quantum register (NBQUREG) can be very large, such that even the first quantum dot (NV1) of the first quantum bit (QUB1) of the n-bit quantum register (NBQUREG) can no longer be directly coupled or directly entangled with the nth quantum dot (NVn) of the nth quantum bit (QUBn) of the n-bit quantum register (NBQUREG).

[0393] For simplicity, we again assume that the n quantum dots (NV1 to NVn) of the n qubits (QUB1 to QUBn) are countably arranged along the one-dimensional line. This one-dimensional line can also be curved, angled, or closed in a loop. Therefore, in this example, the n quantum dots (NV1 to NVn) and their respective qubits (QUB1 to QUBn) represent the quantum bus (QUBUS) of a chain-like quantum network (QUNET) of n quantum dots (NV1 to NVn), starting from the first quantum dot (NV1) of the first nuclear electron quantum register (CEQUREG1) and ending at the nth quantum dot (NVn) of the nth nuclear electron quantum register (CEQUERGn).

[0394] Here, the first quantum dot (NV1) of the first core electron quantum register (CEQUREG1) is also the first quantum dot (NV1) of the first quantum bit (QUB1) at the beginning of the n-bit electron-electron quantum register (NBQUREG).

[0395] Here, the nth quantum dot (NVn) of the nth nuclear electron quantum register (CEQUREGn) is also the nth quantum dot (NVn) of the nth quantum bit (QUBn) at the end of the nth electron-electron quantum register (NBQUREG).

[0396] In the quantum bus (QUBUS) of the quantum network (QUNET) in the form of a chain of n quantum dots (NV1 to NVn), the n quantum dots (NV1 to NVn) of the n-bit electron-electron-quantum register (NBQUREG) and the n qubits (QUB1 to QUBn) of the resulting n-bit electron-electron-quantum register (NBQUREG) are countable and can thus be consecutively numbered from 1 to n by positive integers.

[0397] Therefore, in the chain of quantum dots (NV1 to NVn) of the quantum bus (QUBUS) of the quantum network (QUNET), the (j-1)th quantum dot (NV(j-1)) precedes the j-th quantum dot (NVj) and is referred to below as the leader quantum dot (NV(j-1)). Thus, in this chain, the (j)th qubit (QUB(j)) with the (j)th quantum dot (NVj) is preceded by the (j-1)th qubit (QUB(j-1)) with the (j-1)th quantum dot (NV(j-1)), which is referred to below as the leader quantum bit (QUB(j-1)).

[0398] Therefore, in the quantum dot (NV1 to NVn) chain of the quantum bus (QUBUS) of a quantum network (QUNET), the j-th quantum dot (NVj) is followed by the (j+1)-th quantum dot (NV(j+1)), which is referred to as the successor quantum dot (NV(j+1)) hereinafter. Accordingly, in the chain, the j-th qubit (QUB(j)) including the j-th quantum dot (NVj) is followed by the (j+1)-th qubit (QUB(j+1)) including the (j+1)-th quantum dot (NV(j+1)), which is referred to as the successor qubit (QUB(j-1)) hereinafter. Here, the marking number j for the exemplary chain shall be any positive integer satisfying 1<j<n, where n is a positive integer satisfying n>2.

[0399] In this chain, the j-th quantum dot (NVj) has a distance (sp(j-1)j), which is its leading distance. Preferably, the spatial distance (sp(j-1)j) between the j-th quantum dot (QUBj) of the j-th qubit (QUBj) of the quantum register (QUREG) and the (j-1)-th quantum dot (NV(j-1)) of the preceding (j-1)-th qubit (QUB(j-1)) of the n-th quantum register (NBQUREG) is very small, such that the (j-1)-th quantum dot (NV(j-1)) of the preceding n-th quantum register (NBQUREG) (N) is very small. The magnetic field of V(j-1)) affects, at least temporarily, the behavior of the j-th quantum dot (NVj) of the j-th qubit (QUBj) of the n-bit quantum register (NBQUREG), and / or the magnetic field of the j-th quantum dot (NVj) of the j-th qubit (QUBj) of the n-bit quantum register (QUEREG) affects, at least temporarily, the behavior of the (j-1)-th quantum dot (NV(j-1)) of the preceding (j-1)-th qubit (QUB(j-1)) of the n-bit quantum register (NBQUREG). Preferably, the distance (sp(j-1)1) between the j-th quantum dot (NVj) of the j-th qubit (QUBj) of the n-bit quantum register (NBQUREG) of the quantum network (QUNET) and the (j-1)-th quantum dot (NV(j-1)) of the preceding (j-1)-th qubit (QUB(j-1)) of the n-bit quantum register (NBQUREG) of the quantum network (QUNET) is less than 50 nm and / or less than 30 nm and / or less than 20 nm and / or less than 10 nm and / or less than 5 nm and / or less than 10 ... Or less than 2nm, and / or the distance (sp(j-1)j) between the j-th quantum dot (NVj) of the j-th quantum bit (QUBj) of the n-th quantum register (NBQUREG) of the quantum bus (QUBUS) of the quantum network (QUNET) and the (j-1)-th quantum dot (NV(j-1)) of the preceding (j-1)-th quantum bit (QUB(j-1)) of the n-th quantum register (NBQUREG) of the quantum network (QUNET) is between 30nm and 2nm and / or less than 10nm and / or less than 5nm and / or less than 2nm.

[0400] In the chain of quantum dots (NV1 to NVn) of the quantum bus (QUBUS) of the quantum network (QUNET), the j-th quantum dot (NVj) has a distance (spj(j+1)) between its successors. Preferably, for this purpose, the spatial distance (spj(j+1)) between the j-th quantum dot (NVj) of the j-th qubit (QUBj) of the n-bit quantum register (QUEREG) of the quantum network (QUNET) and the (j+1)-th quantum dot (NV(j+1)) of the preceding (j+1)-th qubit (QUB(j+1)) of the quantum register (QUREG) is very small, such that the magnetic field of the (j+1)-th quantum dot (NV(j+1)) of the following (j+1)-th qubit (QUB(j+1)) of the n-bit quantum register (NBQUREG) of the quantum network (QUNET) is... The magnetic field of the j-th quantum dot (NVj) of the j-th quantum bit (QUBj) of the n-bit quantum register (NBQUREG) of the quantum bus (QUBUS) of the quantum network (QUNET) at least temporarily affects the behavior of the (j+1)-th quantum bit (QUB(j+1)) of the (j+1)-th quantum bit (QUB(j+1)) of the n-bit quantum register (NBQUREG) of the quantum bus (QUBUS) of the quantum network (QUNET), and / or the magnetic field of the j-th quantum dot (NVj) of the j-th quantum bit (QUB(j+1)) of the (j+1)-th quantum bit (QUB(j+1)) of the (j+1)-th quantum bit (QUB(j+1)) of the quantum bus (QUBUS) of the quantum network (QUNET). Preferably, for this purpose, the distance (spj(j+1)) between the j-th quantum dot (NVj) of the j-th qubit (QUBj) of the n-bit quantum register (NBQUREG) of the quantum network (QUNET) and the (j+1)-th quantum dot (NV(j+1)) of the (j+1)-th qubit (QUB(j+1)) following the n-bit quantum register (NBQUREG) of the quantum network (QUNET) is less than 50 nm and / or less than 30 nm and / or less than 20 nm and / or less than 10 nm and / or less than 10 nm and / or smaller than 10 nm. The distance (spj(j+1)) between the j-th quantum dot (NVj) of the j-th quantum bit (QUBj) of the n-bit quantum register (NBQUREG) of the quantum bus (QUBUS) of the quantum network (QUNET) and the (j+1)-th quantum dot (NV(j+1)) of the (j+1)-th quantum bit (QUB(j+1)) of the following n-bit quantum register (NBQUREG) of the quantum network (QUNET) is between 30nm and 2nm and / or less than 10nm and / or less than 5nm and / or less than 2nm.

[0401] In the chain of quantum dots (NV1 to NVn) of the quantum bus (QUBUS) of the quantum network (QUNET), the first quantum dot (NV1) has a first distance (sp12) and a subsequent distance. Preferably, for this purpose, the first spatial distance (sp12) between the first quantum dot (NV1) of the first qubit (QUB1) of the quantum register (QUREG) of the quantum network (QUNET) and the second quantum dot (NV2) of the second qubit (QUB2) following the n-bit quantum register (NBQUREG) of the quantum network (QUNET) is very small, such that the second quantum dot (NV2) of the second qubit (QUB2) following the n-bit quantum register (NBQUREG) of the quantum network (QUNET) is... The magnetic field at least temporarily affects the behavior of the first quantum dot (NV1) of the first quantum bit (QUB1) of the n-bit quantum register (NBQUREG) of the quantum bus (QUNET) of the quantum network (QUNET), and / or the magnetic field of the first quantum dot (NV1) of the first quantum bit (QUB1) of the n-bit quantum register (NBQUREG) of the quantum bus (QUNET) of the quantum network (QUNET) at least temporarily affects the behavior of the second quantum dot (NV2) of the second quantum bit (QUB2) following the n-bit quantum register (NBQUREG) of the quantum bus (QUNET) of the quantum network (QUNET). Preferably, the distance (sp12) between the first quantum dot (NV1) of the first qubit (QUB1) of the n-bit quantum register (NBQUREG) of the quantum bus (QUBUS) of the quantum network (QUNET) and the second quantum dot (NV2) of the second qubit (QUB2) following the n-bit quantum register (NBQUREG) of the quantum bus (QUNET) of the quantum network (QUNET) is less than 50 nm and / or less than 30 nm and / or less than 20 nm and / or less than 10 nm and / or less than The distance (sp12) between the first quantum dot (NV1) of the first quantum bit (QUB1) of the first quantum register (NBQUREG) of the quantum bus (QUBUS) of the quantum network (QUNET) and the second quantum dot (NV2) of the second quantum bit (QUB2) of the second quantum register (QUB2) of the next n-bit quantum register (NBQUREG) of the quantum bus (QUBUS) of the quantum network (QUNET) is between 30nm and 2nm and / or less than 10nm and / or less than 5nm and / or less than 2nm.

[0402] In a chain of n quantum dots (NV1 to NVn) in the quantum bus (QUBUS) of a quantum network (QUNET), the nth quantum dot (NVn) has a distance (sp(n-1)n) preceding its leading distance. Preferably, the spatial distance (sp(n-1)n) between the nth quantum dot (NVn) of the nth qubit (QUBn) of the quantum bus (QUBUS) of the quantum network (QUNET) and the (n-1)th quantum dot (NV(n-1)) preceding the (n-1)th qubit (QUB(n-1)) of the quantum bus (QUBUS) of the quantum network (QUNET) is very small, making the (n-1)th quantum dot (NV(n-1)) of the (n-1)th qubit (QUB(n-1)) preceding the (n-1)th qubit (QUB(n-1)) of the quantum bus (QUBUS) of the quantum network (QUNET) very small, thus making the (n-1)th quantum dot (NV(n-1)) of the (n-1)th qubit (QUB(n-1)) of the quantum bus (QUBUS) of the quantum network (QUNET) very small. The magnetic field of NV(n-1) affects, at least temporarily, the behavior of the nth quantum dot (NVn) of the nth quantum bit (QUBn) of the nth quantum register (NBQUREG) of the quantum bus (QUBUS) of the quantum network (QUNET), and / or the magnetic field of the nth quantum bit (QUBn) of the nth quantum register (NBQUREG) of the quantum bus (QUBUS) of the quantum network (QUNET) affects, at least temporarily, the behavior of the (n-1)th quantum bit (QUB(n-1)) of the (n-1)th quantum bit (QUB(n-1)) of the preceding nth quantum register (NBQUREG) of the quantum bus (QUBUS) of the quantum network (QUNET). Preferably, the distance (sp(n-1)1) between the nth quantum dot (NVn) of the nth qubit (QUBn) of the nth quantum register (NBQUREG) of the quantum network (QUNET) and the (n-1)th quantum dot (NV(n-1)) of the preceding (n-1)th qubit (QUB(n-1)) of the nth quantum register (NBQUREG) of the quantum network (QUNET) is less than 50 nm and / or less than 30 nm and / or less than 20 nm and / or less than 10 nm and / or less than 5 nm and / or less than 10 ... Or less than 2nm, and / or the distance (sp(n-1)n) between the nth quantum bit (QUBn) of the nth quantum register (NBQUREG) of the quantum bus (QUBUS) of the quantum network (QUNET) and the (n-1)th quantum bit (QUB(n-1)) of the preceding (n-1)th quantum bit (QUB(n-1)) of the quantum bus (NBQUREG) of the quantum network (QUNET) (n-1) is between 30nm and 2nm and / or less than 10nm and / or less than 5nm and / or less than 2nm.

[0403] In a chain of n quantum dots (NV1 to NVn) in the quantum bus (QUBUS) of a quantum network (QUNET), the first quantum dot (NV1) can have a distance (sp1n) associated with the nth quantum dot (NVn), which is its chain length. In this example, in the n quantum dots (NV1 to NVn) of the quantum bus (QUBUS) of the quantum network (QUNET), the spatial distance (sp1n) between the first quantum dot (NV1) of the first qubit (QUB1) of the n-bit quantum register (NBQUREG) at the beginning of the chain and the nth quantum dot (NVn) of the n-bit quantum register (NBQUREG) at the end of the chain must be very large, such that the magnetic field of the first quantum dot (NV1) of the first qubit (QUB1) of the n-bit quantum register (NBQUREG) at the beginning of the chain of the quantum bus (QUNET) of the quantum network (QUNET) does not significantly and directly affect the n quantum dots (NV1 to NVn) of the quantum bus (QUBUS). The behavior of the nth quantum bit (QUBn) of the nth quantum register (NBQUREG) of the quantum bus (QUBUS) of the quantum network (QUNET) at the end of the chain (NV1 to NVn) in the quantum network (QUNET) at the end of the chain, and / or the magnetic field of the nth quantum bit (QUBn) of the nth quantum register (NBQUREG) of the quantum bus (QUBUS) of the quantum network (QUNET) at the end of the chain cannot significantly and directly affect the quantum bus (QUBU). The behavior of the first quantum dot (NV1) of the first quantum bit (QUB1) of the first quantum register (NBQUREG) of the quantum bus (QUBUS) of the quantum network (QUNET) at the beginning of the chain among the n quantum dots (NV1 to NVn) of S) can only be produced with the help of the other n-2 quantum dots (NV2 to NV(n-1)) located between the first quantum dot (NV1) and the nth quantum dot (NVn) of the quantum bus (QUBUS) of the quantum network (QUNET).

[0404] The distances are now preferably chosen such that the first quantum dot (CI1) of the first quantum dot register (CEQUREG1) can no longer directly influence the nth quantum dot (NVn) and the nth quantum dot (CIn) of the nth quantum dot register (CEQUREG2). Specifically, these distances are now preferably chosen such that the magnetic moment of the first quantum dot (CI1) of the first quantum dot register (CEQUREG1) can no longer directly influence the magnetic moment of the nth quantum dot (NVn) and / or the magnetic moment of the nth quantum dot (CIn) of the nth quantum dot register (CEQUREG2). Therefore, the first quantum dot (CI1) of the first quantum dot register (CEQUREG1) can no longer easily become entangled with the nth quantum dot (NVn) and the nth quantum dot (CIn) of the nth quantum dot register (CEQUREG2). In order to make the first quantum dot (CI1) of the first nuclear quantum register (CEQUREG1) entangled with the nth quantum dot (NVn) and / or the nth quantum dot (CIn) of the nth nuclear quantum register (CEQUREG2), and the state of the first quantum dot (CI1) of the first nuclear quantum register (CEQUREG1) can be entangled with the state of the first quantum dot (NV1) of the first nuclear quantum register (CEQUREG1), then the state of the second quantum dot (NV2) of the second qubit (QUB2) of the n-bit electron-electron quantum register (NBQUREG) of the quantum bus (QUBUS) of the quantum network (QUNET) can be entangled with the state of the first quantum dot (NV1) of the first qubit (QUB1) of the n-bit electron-electron quantum register (NBQUREG) of the quantum bus (QUBUS) of the quantum network (QUNET). The state of the third quantum dot (NV3) of the third qubit (QUB3) of the n-bit electron-electron quantum register (NBQUREG) of the quantum bus (QUBUS) of the quantum network (QUNET) can be entangled with the state of the second quantum dot (NV2) of the second qubit (QUB2) of the n-bit electron-electron quantum register (NBQUREG) of the quantum bus (QUBUS) of the quantum network (QUNET).Therefore, this can continue within the chain of n quantum dots (NV1 to NVn) of the quantum bus (QUBUS) in the form of an exemplary n-bit electron-electron quantum register (NBQUREG) of the quantum network (QUNET) until the state of the nth quantum dot (NVn) of the nth qubit (QUBn) of the quantum bus (QUBUS) of the quantum network (QUNET) is entangled with the state of the (n-1)th quantum dot (NV(n-1)) of the (n-1)th qubit (QUB(n-1)) of the n-bit electron-electron quantum register (NBQUREG) of the quantum bus (QUBUS) of the quantum network (QUNET). In this way, the state of the nth quantum dot (NVn) of the nth qubit (QUBn) of the n-bit electron-electron quantum register (NBQUREG) of the quantum bus (QUBUS) of the quantum network (QUNET) can be entangled with the state of the first quantum dot (NV1) of the first qubit (QUB1) of the n-bit electron-electron quantum register (NBQUREG) of the quantum network (QUNET). Therefore, if the first quantum dot (NV1) of the first qubit (QUB1) of the n-bit electron-electron quantum register (NBQUREG) of the quantum network (QUNET) has previously been entangled with the state of the first core quantum dot (CI1) of the first core quantum bit (CQUB1), then the state of the nth quantum dot (NVn) of the n-bit electron-electron quantum register (NBQUREG) of the quantum network (QUNET) can also be entangled with the state of the first core quantum dot (CI1) of the first core quantum bit (CQUB1). Finally, the state of the nth nucleus quantum dot (CIn) of the nth nucleus qubit (CQUBn) can be entangled with the state of the nth quantum dot (NVn) of the nth electron-electron quantum register (NBQUREG) of the quantum bus (QUBUS) of the quantum network (QUNET).As a result, the state of the nth quantum dot (CIn) of the nth nuclear quantum register (CQUREGn) is also indirectly entangled with the state of the first quantum dot (CI1) of the first nuclear qubit (CQUB1) of the first nuclear quantum register (CQUREG1) through a quantum bus (QUBUS) in the form of an exemplary n-bit electron-electron quantum register (NBQUREG) of the quantum network (QUNET), although direct coupling and thus direct entanglement between the state of the nth quantum dot (CIn) of the nth nuclear quantum register (CQUREGn) and the state of the first quantum dot (CI1) of the first nuclear qubit (CQUB1) of the first nuclear quantum register (CQUREG1) is impossible due to the excessive spatial distance between the first quantum dot (CI1) and the nth quantum dot (CIn).

[0405] Instead of the nuclear electronic quantum registers (CEQUREG1, CEQUREG2), two quantum ALUs (QUALU1, QUALU2) can be used, interconnected via an electron-electron quantum register (QUREG) or a quantum bus (QUBUS) of a quantum network (QUNET). Preferably, the quantum network (QUNET) comprises at least two interconnected quantum buses (QUBUS). However, in the broadest sense, a single quantum bus (QUBUS) can also be considered a quantum network (QUNET).

[0406] A particular advantage of the qubits (QUBs) proposed in this paper is that they each possess the aforementioned vertical lines (LV) and horizontal lines (LH). In addition to and superimposed on the applied control signal (if any), these lines can also be applied with a constant potential, which detunes the resonant frequency of the associated quantum dot (NV) of each qubit (QUB) at the quantum dot location in the n-bit electron-electron quantum register (NBQUREG) of the quantum bus (QUBUS), thereby preventing further propagation beyond the detuned quantum dot location from the dependence on the nuclear quantum dot (CI1). Therefore, by applying a static potential mode to the control lines (LH, LV) of the qubits (QUBs) of the quantum network (QUNET) with their quantum dots (NVs), it is possible to detune the individual quantum dots of the quantum network (QUNET), thereby making them insensitive to manipulation of their quantum states by the control signal applied to the lines (LH, LV). Thus, it is possible to make a subset of qubits (QUBs) with their quantum dots (NVs) sensitive to control signals within the quantum network, while making the remaining qubits (QUBs) with their quantum dots (NVs) insensitive to these control signals. For example, this can be used to partition an n-bit quantum register into m-bit and p-bit quantum registers, where m + p = n should hold. This selectivity of individual qubits (QUBs) and their quantum dots (NVs) or entire quantum bus segments, along with the scalability of the proposed method, constitutes the main advantage of this scheme.

[0407] Quantum dot array according to the present invention

[0408] Construction of quantum dot arrays based on the scheme

[0409] As stated above, a significant and potentially fundamental basis for the quantum computer system described in this paper is a one-dimensional array of quantum dots (QREG1D, QREG2D). Figure 25 ), which may have kinks as part of a quantum bus system ( Figure 26 ), branches Figure 27 ) and loops ( Figure 28 In the above figures, quantum dots are part of the quantum ALU shown in these figures. The quantum dots (NV11, NV12, NV13, NV21, NV22, NV23, NV31, NV32, NV33) are preferably arranged in a one-dimensional grid (QREG1D) or a two-dimensional grid (QREG2D). Individual lattice sites of this one-dimensional grid (QREG1D) or two-dimensional grid (QREG2D) may not be occupied by quantum dots. It is important to note that the remaining quantum dots preferably form a pattern of electron-electron quantum registers (QUREGs).

[0410] Therefore, the arrangement of quantum dots (NVs) proposed in this paper should preferably be designed such that the distance (sp12) between two adjacent quantum dots in the quantum dots (NV11, NV12, NV13, NV21, NV22, NV23, NV31, NV32, NV33) is less than 100 nm and / or better less than 50 nm and / or better less than 30 nm and / or better less than 20 nm and / or better less than 10 nm.

[0411] Preferably, all, but at least two, of the quantum dots (NV11, NV12, NV13, NV21, NV22, NV23, NV31, NV32, NV33) are individual portions of exactly one qubit as described above. As previously stated, when using diamond as the substrate (D), one or more of the quantum dots (NV11, NV12, NV13, NV21, NV22, NV23, NV31, NV32, NV33) are NV centers, SiV centers, ST1 centers, or L2 centers. Particularly preferred are NV centers in diamond, G centers in silicon, or V centers in silicon carbide, due to better understanding at the time of submission.

[0412] Construction of nuclear quantum dot arrays (CQREG1D, CQREG2D)

[0413] Similar to the arrangement of quantum dots, the arrangement of nuclear quantum dots (CQREG1D, CQREG2D) can be defined. Preferably, the nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) are arranged at least approximately in a one-dimensional lattice (CQREG1D) or a two-dimensional lattice (CQREG2D). Therefore, the unit cell lattice of this lattice can be formed by several nuclear quantum dots. This is useful, for example, when constructing a lattice for a quantum ALU. In this case, a lattice of quantum dots (NV11, NV12, NV13, NV21, NV22, NV23, NV31, NV32, NV33) is constructed. Preferably, each of these quantum dots (NV11, NV12, NV13, NV21, NV22, NV23, NV31, NV32, NV33) is assigned a set of nuclear quantum dots, the number of which is preferably equal, but not necessarily always equal. Preferably, the arrangement of the nuclear quantum dots associated with such quantum dots is also similar or identical across different quantum ALUs. More importantly, the first coupling strength between a quantum dot and a first nuclear quantum dot among the nuclear quantum dots associated with that quantum dot, and the resulting first resonance frequency, is different from the second coupling strength between that quantum dot and a second nuclear quantum dot among the nuclear quantum dots associated with that quantum dot, and the resulting second resonance frequency.

[0414] As described above, it is conceivable that the nuclear spins of nuclear quantum dots are directly coupled to each other. For this purpose, the internuclear distance (sp12') between two adjacent nuclear quantum dots of nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) must be less than 200 pm and / or better, less than 100 pm and / or better, less than 50 pm and / or better, less than 30 pm and / or better, less than 20 pm and / or better, less than 10 pm.

[0415] For the formation of the quantum ALU, which is the core element of the quantum computer concept proposed in this paper, it is particularly recommended that at least two of the nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) be separate parts of exactly one nuclear qubit (CQUB) as described above.

[0416] As described above, when using diamond as the substrate (D), one or more of the nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) are 13 One or more atomic nuclei of the C isotope are useful.

[0417] As described above, when silicon is used as the substrate (D), if one or more of the nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) are 29 One or more atomic nuclei of the Si isotope are useful.

[0418] As described above, when silicon carbide is used as the substrate (D), if one or more of the nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) are 29 One or more atomic nuclei or nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) of Si isotopes are 13 One or more atomic nuclei of the C isotope are useful.

[0419] Since the NV center is the preferred deformation for realizing quantum dots when diamond is used as the substrate (D), it is preferable that one or more of the nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) are placed in the diamond serving as the substrate (D).15 The nucleus of an N isotope. For example, this can be achieved by using an atom with... 15 N isotopes and multiple 13 Molecular implantation of C isotopes into diamond creates diamonds with NV centers in a single step. 13 Multiple nuclear qubits of C isotopes and nitrogen atoms serving as the NV center in diamond. 15 The quantum ALU of nuclear qubits in the form of N isotopes. Furthermore, in this case, it is possible that one of the nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) is in diamond as the substrate (D). 14 The nucleus of nitrogen isotopes.

[0420] How to operate a quantum computer

[0421] The following describes the various procedures required for or useful to the operation of the quantum computer.

[0422] Preferably, the following operation of the quantum computer is controlled and executed by a control device (μC). For example, the control device (μC) can be a microcomputer or a finite state machine. For operation, binary codes are stored in the memory of the control device (μC) via a data bus (DA). Storage is based on an order parameter. For example, this can be a memory address. These binary codes symbolize one of the following processes or combinations and / or sequences (also combinations). Based on the order parameter, these binary codes are retrieved from memory. For example, it might be the quantum computer's program counter, which increments by 1 at each processing step. This then directly or indirectly points to the next storage location in memory, and thus to the binary code of the next process to be executed. Therefore, the control device (μC) processes at least a subset of these binary codes as functions of the order parameter. The control device (μC) then executes symbolization processes and / or combinations thereof with the assistance of additional auxiliary devices. Preferably, each binary code thus corresponds to a portion of the process used to manipulate quantum dots or nuclear quantum dots.

[0423] Preparation process

[0424] The preparation process described below requires determining the different coupling strengths in the previously mentioned registers. These coupling strengths are represented by different resonant frequencies. In order to operate the quantum computer and / or its components, these resonant frequencies are measured once and preferably stored in the memory of the control computer (μC) or in memory accessible to the control computer (μC). These determined frequencies are used by the control computer (μC) to selectively drive these device components when selectively controlling quantum dots or nuclear quantum dots or quantum registers or nuclear quantum registers.

[0425] Frequency determination method

[0426] As described above, the first method determines the resonant frequency of each individual driveable quantum dot (NV) of a quantum computer or sub-device.

[0427] This resonance frequency is referred to below as the electron-1-electron-1 microwave resonance frequency (f). MW Therefore, the applied method is a method for preparing the quantum information of the first quantum dot (NV1) of the first quantum bit (QUB1), and in particular, the change of the electronic configuration of the first quantum dot (NV1), as described above, based on the quantum information of the first quantum dot (NV1) of the first quantum bit (QUB1), especially the first spin of the first electronic configuration of the first quantum dot (NV1). For this purpose, specifically when the spin of the first electronic configuration is upward or downward, the frequency (f) of the electromagnetic radiation incident on the quantum dot is adjusted by means of an ODMR experiment, and the electron 1-electron 1 microwave resonance frequency (f1) is determined. MW To perform the determination of the energy transfer of the first quantum dot (NV1), in particular its first electronic configuration.

[0428] The second method determines the resonant frequencies of each individual driveable pair of the two quantum dots (NV1, NV2) of the quantum computer or sub-device described above. Therefore, unlike the previous process, this process does not involve the operation of individual quantum dots, but rather the coupling of the first quantum dot with a second quantum dot that is different from the first quantum dot.

[0429] This resonance frequency is referred to below as the electron 1-electron 2 microwave resonance frequency (f). MWEE Therefore, the applied method is a method for preparing the quantum information of the first quantum dot (NV1) of the first quantum bit (QUB1) of the quantum register (QUREG) based on the quantum information of the second quantum dot (NV2) of the second quantum bit (QUB2) of the quantum register (QUREG) as described above, and in particular the second spin of the second electronic configuration of the second quantum dot (NV2). This method includes: using ODMR experiments to adjust the frequency (f) and determine the electron 1-electron 2 microwave resonance frequency (f).MWEE This is used to determine the energy transfer of the first quantum dot (NV1), particularly its first electronic configuration, especially when the spin of the second electronic configuration is up or down.

[0430] The third method determines the resonant frequencies of each individual driveable pair of quantum dots (NV1) and nuclear quantum dots (CI) in the quantum computer or sub-device described above. Therefore, unlike the previous process, this process does not involve the operation of a single quantum dot or a pair of two quantum dots, but now involves the coupling of the first quantum dot with the first nuclear quantum dot.

[0431] The quantum information of the quantum dot (NV) used to modify the quantum bits (QUB) of the nuclear quantum dot (CI) quantum register (CEQUREG), particularly the resonant frequency of its electronic configuration spin, is referred to below as the nuclear-electron microwave resonant frequency (f). MWCE ) is used to represent this.

[0432] The quantum information of the nuclear quantum dot (CI) used to modify the quantum bits (QUB) of the nuclear electron quantum register (CEQUREG) based on the quantum information of the quantum dot (CI), particularly the resonant frequency of its electronic configuration spin, is referred to below as the electron-nuclear radio wave resonant frequency (f). RWEC ) is used to represent this.

[0433] Therefore, it is used to determine the nuclear-electron microwave resonance frequency (f MWCE The method is used to prepare, as described above, the quantum information of the quantum dot (NV) of the quantum bit (QUB) of the nuclear electron quantum register (CEQUREG), particularly the spin variation of its electronic configuration, based on the quantum information of the nuclear quantum dot (CI) of the nuclear quantum bit (CQUB) of the nuclear electron quantum register (CEQUREG), especially the spin variation of its electronic configuration. The method includes: using ODMR experiments to adjust the frequency (f) and determine the nuclear-electron microwave resonance frequency (fo). MWCE This is used to determine the energy transfer of the quantum dot (NV), particularly its electrons, especially when the nuclear spin is up or down.

[0434] On the other hand, the electron-nuclear radio wave resonance frequency (f RWECThe method for determining the quantum information of the nuclear quantum dot (NV) of the nuclear quantum bit (QUB) of the nuclear electron quantum register (CEQUREG), particularly the spin of its electronic configuration, is a method for preparing the quantum information of the nuclear quantum dot (CI) of the nuclear quantum bit (CQUB) of the nuclear electron quantum register (CEQUREG) as described above, particularly the change in the nuclear spin of its atomic nucleus. This method includes: determining the electron-nuclear radio wave resonance frequency (f) by means of an ODMR experiment through adjusting the frequency (f). RWEC This is used to determine the energy transfer of quantum dots (NVs), especially their electronic configurations, particularly when the nuclear spin is up or down.

[0435] For completeness, the coupling of two nuclear spins is also discussed here. The method used here is as follows: based on the quantum information of the second nuclear quantum dot (CI2) of the second nuclear qubit (CQUB2) of the nuclear-nuclear quantum register (CCQUREG), particularly the nuclear spin of the second nuclear quantum dot (CI2), the quantum information of the first nuclear quantum dot (CI1) of the first nuclear qubit (CQUB) of the nuclear-nuclear quantum register (CCQUREG), particularly the change in the nuclear spin of its nucleus, is prepared. This method includes: by means of ODMR experiments, adjusting the frequency (f) and determining the nuclear-nuclear radio wave resonance frequency (f...). RWCC This is used to determine the energy transfer of the first nuclear spin of the first nuclear quantum dot (CI1), particularly when the second nuclear spin of the second nuclear quantum dot (CI2) is upward or downward.

[0436] In the following text, it is now assumed that the previously mentioned nuclear-nuclear radio wave resonant frequency (f) is used for the electromagnetic control field and thus for the electrical control currents of the horizontal and vertical lines (LH, LV). RWCC ), electron-nuclear radio wave resonance frequency (f RWEC ), nuclear-electron microwave resonance frequency (f MWCE ), electron 1-electron 2-microwave resonant frequency (f MWEE ) and electron 1-electron 1-microwave resonance frequency (f MW It is known that the corresponding values ​​of the quantum computer components to be manipulated, as described above, are preferably stored in the memory of the control computer (μC) or in memory accessible to it.

[0437] The control computer (μC) then, for each operating device (HD1, HD2, HD3, VD1, HS1, HS2, HS3, VS1), causes these devices (HD1, HD2, HD3, VD1, HS1, HS2, HS3, VS1) to preferably generate the necessary current pulse trains and / or electromagnetic wave pulse trains with the correct frequency and correct envelope, starting with the start signal of the control computer (μC) or preferably the start signal of other devices controlled by the control computer (μC).

[0438] Individual operation

[0439] The following describes the essential individual operations necessary for using the quantum computer presented herein. Preferably, certain binary codes symbolize these individual operations. These individual operations can be combined into sequences of instructions. These sequences of instructions correspond to sequences of binary codes executed by a control computer (μC). Preferably, a control device, such as a control computer (μC), controls the time sequence of the individual operations presented herein. Preferably, the control computer (μC) or control device executes program code of binary numbers, wherein at least a portion of the binary numbers represents a predetermined sequence of individual operations.

[0440] A single operation code of the binary program of the control computer (μC) triggers an operation of the control computer (μC), which preferably consists of one or more single operations preferably executed sequentially or in parallel. To this end, the control computer (μC) increments the program counter (PCN) and determines the binary value of the current single operation code at a storage location in its program memory containing the binary code corresponding to the program counter (PCN). The control computer (μC) is preferably a conventional computer employing a von Neumann or Harvard architecture. Based on the binary value of the program code at the storage location, the control computer (μC) generates a temporarily correct sequence of various control signals for the horizontal and vertical lines (LH, LV) of the quantum computer's qubits (QUBs) and related auxiliary sets such as a light-emitting device for generating "green light" for illuminating the quantum dots (NVs) of the qubits (QUBs) with green light. Preferably, this binary value of the program code refers to a routine of single operation codes to enable the generation of more complex sequences.

[0441] In the following text, we assume that the quantum computer has n qubits (QUB1 to QUBn) linearly arranged along a horizontal line (LH1). Let each j-th qubit (QUBj) (1≤j≤n) of the n qubits (QUB1 to QUBn) be associated with the j-th vertical line (LVj) (1≤j≤n) of the n vertical lines (LV1 to LVn). The n qubits (QUB1 to QUBn) correspond to their n quantum dots (NV11 to NV1n). For the case of n=3, the linear arrangement of the qubits (QUB1 to QUBn) in the form of a one-dimensional quantum register (QREG1D) is simplified to the illustrative form given here. Figure 10 A diagram is provided to illustrate its meaning.

[0442] Quantum bit reset method

[0443] In this context, one of the most important single operations of a quantum computer is the process of resetting the quantum dot (NV) of the previously described qubit (QUB) to a predefined state. This process is preferably triggered, for example, by a reset code in the binary program of the control computer (μC).

[0444] To this end, the control computer (μC) activates a light-emitting device (LED) capable of illuminating the corresponding j-th quantum dot (QUBj) among the n quantum dots (QUB1 to QUBn) with green light. Here, the device may have optical functional devices such as mirrors, lenses, or optical waveguides, which guide the green light from the LED to the corresponding j-th quantum dot (QUBj) among the n quantum dots (QUB1 to QUBn). Preferably, the reset is performed in such a manner that all quantum dots (NV1 to NVn) of all qubits (QUB1 to QUBn) of the quantum computer are simultaneously reset by illuminating them with "green light" from one or more LEDs or by radiation of equivalent function. Therefore, illuminating at least one quantum dot (NV) among the quantum dots (NV1 to NVn) with light, relative to the effect of this illuminating on the quantum dot (NV), is functionally equivalent to illuminating the NV center in diamond with "green light" when that NV center is used as the quantum dot (NV).

[0445] When the NV center (NV) in diamond is used as the substrate (D) material, irradiation with "green light" according to this disclosure results in the reset of quantum information. In the exemplary use of the NV center (NV) in diamond as a quantum dot (NV), the "green light" preferably has a wavelength in the range of 400 nm to 700 nm and / or better 450 nm to 650 nm and / or better 500 nm to 550 nm and / or better 515 nm to 540 nm. In the development of the technical content of this document, electromagnetic reset radiation with a wavelength of 532 nm generated by a laser (LED) has achieved good results. In addition, good results have also been obtained using a green laser diode with a wavelength of 520 nm. In the case of using other substrates (D) and / or other quantum dots, if the irradiation with this electromagnetic radiation has a functionally similar effect on the quantum dot (NV) in question, such as irradiating the NV center in diamond with electromagnetic radiation in the wavelength range of 400 nm to 700 nm and / or better 450 nm to 650 nm and / or better 500 nm to 550 nm and / or better 515 nm to 540 nm and / or preferably 532 nm, as previously described, then the electromagnetic radiation is referred to as "green light" in the sense of this document. In the case of NV centers in diamond, the Osram PLT5 520B laser diode with a wavelength of 520 nm has been shown to be an exemplary source of "green light" for irradiating the NV centers in diamond, which is the material of the substrate (D). This functionally equivalent light is generally referred to as "green light" herein and is therefore defined not by visual impression but by its function in the proposed apparatus.

[0446] Nuclear qubit reset method or quantum ALU reset method

[0447] The following sections will explain the reset of the nuclear electronic quantum register (CEQUREG) as described above. As previously mentioned, the qubits (QUBs) of the nuclear electronic quantum register (CEQUREG) can be understood as terminals for connecting a chain of quantum registers (QUREGs), for example, in the form of an n-bit quantum register (NBQUREG). It is preferable to perform an erase operation on the nuclear qubits (CQUBs) of the nuclear electronic quantum register (CEQUREG) through this terminal of the quantum dot (NV) of the nuclear qubits (CQUBs) of the nuclear electronic quantum register (CEQUREG), because direct access to the nuclear quantum dot (CI) of the nuclear qubits (CQUBs) of the nuclear electronic quantum register (CEQUREG) is difficult. To reset the nuclear quantum dot (CI) of the nuclear qubits (CQUBs) of the nuclear electronic quantum register (CEQUREG), the quantum dot (NV) of the nuclear electronic quantum register (CEQUREG) is reset first. As described above, this is accomplished by illuminating the quantum dots (NVs) of the qubits (QUBs) of the nuclear electron quantum register (CEQUREG) with green light. Therefore, the first step is a single operation that erases the quantum information of the quantum dots (NVs) of the qubits (QUBs) of the nuclear electron quantum register (CEQUREG).

[0448] Now, in the second quantum operation, the control computer (μC) preferably changes the quantum information of the nuclear quantum dot (CI) of the nuclear quantum bit (CQUB) of the nuclear electron quantum register (CEQUREG) according to the quantum information of the quantum dot (NV). Specifically, in this case, the preferred nuclear spin of the atomic nucleus of the nuclear quantum dot (CI) of the nuclear quantum bit (CQUB) of the nuclear electron quantum register (CEQUREG) is changed. Preferably, this change occurs according to the electron spin of the electronic configuration of the quantum dot (NV) of the quantum bit (QUB) of the nuclear electron quantum register (CEQUREG) or the electron spin of the electron in the quantum dot (NV) of the quantum bit (QUB) of the nuclear electron quantum register (CEQUREG). Preferably, the quantum information of the nuclear quantum dot (CI) of the nuclear qubit (CQUB) of the nuclear electron quantum register (CEQUREG), particularly the change of the nuclear spin of its atomic nucleus, is carried out by means of the previously described method based on the quantum information of the quantum dot (NV) of the qubit (QUB) of the nuclear electron quantum register (CEQUREG), particularly the electron spin of its electron or its electronic configuration.

[0449] Single bit operation

[0450] Quantum bit operation methods

[0451] We now describe the method for manipulating a single qubit (QUB). Here we assume that the qubit (QUB) specifically corresponds to one of the qubit constructions described previously. Now, to drive the quantum dot (NV) of the qubit (QUB), a temporary current is applied to the horizontal line (LH). Here, the associated horizontal driver stage (HD) preferentially feeds a horizontal microwave current at the electron-1 microwave resonant frequency (f). MW The modulated horizontal line (LH) is simply the centroid frequency of the current signal. In reality, it is a burst. The timing of the burst, with its start and end times, independently causes a distortion of the spectrum, which will not be considered here. The start and end times correspond to temporary energization. Therefore, the horizontal current (IH) injected by the horizontal drive stage (HD) has a horizontal current component, which is modulated by the electron-electron-electron microwave resonant frequency (f) with horizontal modulation. MW Modulation. In a similar manner, the vertical line (LV) is intermittently energized with a vertical current (IV) having a vertical current component, which is modulated by an electron-electron microwave resonant frequency (f) with vertical modulation. MW Modulation. Here, the associated vertical drive stage (VD) preferably feeds a vertical microwave current at the electron-1-electron-1 microwave resonant frequency (f). MW The horizontal line (LH) is modulated. Again, a current pulse train with a start and end time is used. Therefore, the vertical current is also only temporary. However, preferably, the start time of the vertical current pulse train is shifted in time relative to the start time of the horizontal current pulse train. Therefore, the horizontal modulation of the horizontal current component is preferably phase-shifted by + / -90° relative to the vertical modulation of the vertical current component. This generates a left- or right-polarized microwave field at the location of the quantum dot (NV), which can then be manipulated. The time difference between the end time of the vertical current pulse train and the start time of the vertical current pulse train is the vertical pulse duration. The time difference between the end time of the horizontal current pulse train and the start time of the horizontal current pulse train is the horizontal pulse duration. Preferably, the vertical pulse duration and the horizontal pulse duration are approximately equal. Therefore, the vertical current component is preferably pulsed with a vertical current pulse having a pulse duration, and the horizontal current component is preferably pulsed with a horizontal current pulse having a pulse duration. To generate circular polarization of the microwave electromagnetic field at the quantum dot (NV) location of the quantum bit (QUB), the vertical current pulse is preferably phase-shifted relative to the horizontal current pulse at the electron-electron microwave resonance frequency (f). MWThe period is + / -π / 2. The control computer (μC) thus sets the horizontal drive stage (HD) and the vertical drive stage (VD) so that they are preferably synchronized with the aid of a synchronization signal and generate corresponding horizontal and vertical current pulses in the correct phase.

[0452] Preferably, the pulse durations of the horizontal current pulse and the vertical current pulse correspond to pulse durations corresponding to a time phase difference of π / 4 or π / 2 (Hadamard gate) or 3π / 4 or π (not-gate) of the Rabi oscillation of the quantum dot (NV). When the pulse duration is π / 2, the term Hadamard gate or Hadamard operation will be used hereinafter. When the pulse duration is π, the term "not gate" or "not operation" will be used hereinafter. Alternatively, the operation may preferably be defined such that the pulse durations of the horizontal current pulse and the vertical current pulse correspond to pulse durations corresponding to a phase difference that is an integer multiple of π / 4 of the Rabi oscillation of the quantum dot (NV).

[0453] If it is necessary to drive one of the qubits (QUBj) (1≤j≤n) out of several qubits (QUB1 to QUBn) (n>1, n∈N) in the entire device, the spectrum of the microwave pulse train to be used is decisive, and its determination is linked to the coupling of the other qubits in the n qubits (QUB1 to QUBn). This is achieved by appropriately designing the transient and decay phases of the microwave pulse train. Therefore, the current pulse used to generate the microwave pulse preferably has a transient and decay phase, and the current pulse has an amplitude envelope. The pulse duration of the current pulse refers to the instantaneous time interval of the amplitude envelope relative to 70% of the maximum amplitude of the amplitude envelope of the current pulse used to generate the microwave signal.

[0454] Nuclear qubit manipulation methods

[0455] In the preceding sections, we discussed how to directly manipulate the quantum states of the electrons or electronic configurations of the quantum dots (NVs) of a quantum bit (QUB). Now, we will consider a similar process previously described for a nuclear quantum bit (CQUB).

[0456] By comparison Figure 1 and Figure 2 It is evident that the device for directly controlling the nuclear quantum dot (CI) is almost identical to the device for controlling the quantum dot (NV) of the quantum bit (QUB). Figure 1 and Figure 2 The device consists of horizontal lines (LH) and vertical lines (LV) that pass through quantum dots (NV) and nuclear quantum dots (CI), respectively.

[0457] Therefore, the control of nuclear quantum dots (CI) is similar to the control of quantum dots (NV). Since the mass of the electrons or electronic configurations of a quantum dot (NV) is smaller than the mass of the atomic nucleus of a nuclear quantum dot (CI), the operation of nuclear quantum dots (CI) requires a second nucleus-nuclear radio wave frequency (f...). RWCC2 Its amplitude is smaller than the electron-electron microwave resonant frequency (f) used to manipulate quantum dots (NV). MW (the range of )

[0458] Therefore, similar to the quantum dot (NV) controlling a qubit (QUB), a method for manipulating quantum information in a nuclear quantum dot (CI) involves energizing the horizontal line (LH) of the nuclear qubit (CQUB) with a horizontal current (IH) having a first nucleus-nucleus radio wave frequency (f) as the modulation frequency of the horizontal modulation. RWCC ) and / or the second nuclear-nuclear radio wave frequency (f RWCC2 The method involves modulating a horizontal current component with a vertical current (IV) with a slightly delayed vertical current (IV) to the vertical line (LV) of the nuclear quantum bit (CQUB). Similar to the control of quantum dots (NV), it is useful to manipulate the nuclear quantum dot (CI) using left- or right-polarized electromagnetic waves at its location. For this purpose, the horizontal modulation of the horizontal current component is preferably phase-shifted by + / - 90° relative to the vertical modulation of the vertical current component. Here, + / - π / 2 refers to the frequency of the nuclear-nuclear radio waves (f...). RWCC2 The modulation components of the vertical and horizontal current components are positioned relative to each other in phase. As with the previous manipulation of quantum dots (NVs), the vertical current component is pulsed with a vertical current pulse having a pulse duration, and the horizontal current component is pulsed with a horizontal current pulse having a pulse duration. Alternatively, this can be expressed as, preferably, the vertical current pulse is phase-shifted relative to the horizontal current pulse by a first nucleus-nucleus radio wave frequency (f). RWCC The period of + / -π / 4 or better + / -π / 2 or the second core-core radio wave frequency (f) RWCC2The duration of the horizontal and vertical current pulses is + / - π / 4 or more preferably + / - π / 2 of the period of the Rabi oscillating nuclear quantum dot (CI) of the first nuclear qubit (CQUB). Preferably, the pulse durations of the horizontal and vertical current pulses have a pulse duration corresponding to a phase difference of π / 4 or π / 2 (Hadamard gate) or 3π / 4 or π (NOT gate) of the period of the Rabi oscillating nuclear quantum dot (CI) of the first nuclear qubit (CQUB). In other words, the pulse durations of the horizontal and vertical current pulses have a pulse duration corresponding to a phase difference of π / 4 of the period duration of the Rabi oscillating nuclear quantum dot (CI) of the first nuclear qubit (CQUB).

[0459] Preferably, the timing pulse durations of the horizontal current pulse and the vertical current pulse correspond to timing pulse durations corresponding to a time phase difference of π / 4 or π / 2 (Hadamard gate) or 3π / 4 or π (NOT gate) of the Rabi oscillation of the nuclear quantum dot (CI). When the pulse duration is π / 2, the term Hadamard gate or Hadamard operation is used hereinafter. When the pulse duration is π, the term "NOT gate" or "NOT operation" is used hereinafter. Alternatively, the operation may preferably be defined such that the timing pulse durations of the horizontal current pulse and the vertical current pulse correspond to timing pulse durations corresponding to a phase difference of an integer multiple of π / 4 of the Rabi oscillation of the nuclear quantum dot (CI).

[0460] If the entire device must be driven, for example, the nuclear quantum dots (CIj) of several nuclear quantum dots (CI1 to CIn) of a quantum ALU, as explained below, the spectrum of the radio wave pulse train to be used is decisive, and its determination is related to the coupling of the other nuclear quantum dots among the n nuclear quantum dots (CI1 to CIn). This is achieved by appropriately designing the transient and decay phases of the radio wave pulse train. Therefore, the current pulse used to generate the radio wave pulse (= radio wave pulse train) preferably has a transient and decay phase, wherein the current pulse has an amplitude envelope. The pulse duration of the current pulse refers to the time interval between the amplitude envelope and 70% of the maximum amplitude of the amplitude envelope of the current pulse used to generate the radio wave signal.

[0461] For the sake of completeness, the methods for operating nuclear qubits are listed here. These methods are not particularly important for quantum computers at the time of submission.

[0462] Quantum register single operation

[0463] Selective operation methods for a single qubit in a quantum register

[0464] Selective driving methods for controlling a single qubit of a quantum register without substantially affecting the other qubits of the quantum register in question.

[0465] In this section, we discuss how the quantum information of a single qubit (QBj) of an n-bit quantum register (NBQUREG) with n qubits (QUB1 to QUBn) can change with high probability without altering the quantum information of the other n-1 qubits (QUB1 to QUB(i-1) and (QUB(j+1) to QUBn) in the n-bit quantum register (NBQUREG), where 1 ≤ j ≤ n. Therefore, this is a very fundamental operation, as it illustrates the addressing of a single qubit (QUBj) of the n qubits (QUB1 to QUBn) of the n-bit quantum register (NBQUREG).

[0466] To illustrate this process, assume j = 1, i.e., that is, the first qubit (QUB1). However, this process can also be applied to all other qubits of a one-dimensional or two-dimensional quantum register. The quantum register and qubit preferably correspond to the qubit and quantum register described above.

[0467] Therefore, the exemplary method described herein is an exemplary method for selectively controlling the first qubit (QUB1) of the previously described exemplary n-bit quantum register (NBQUREG). Previously, it was exemplarily assumed that the qubits (QUB1 to QUBn) were arranged along a first horizontal line (LH1), which was shared by the exemplary n qubits (QUB1 to QUBn) of the exemplary n-bit quantum register (NBQUREG). It is explicitly stated that this arrangement is used herein only as an example for illustrative purposes, and other arrangements are possible and covered by the claims.

[0468] For addressing, the method includes the step of temporarily energizing an exemplary common first horizontal line (LH1) of an n-bit quantum register (NBQUREG) with a first horizontal current component of a first horizontal current (IH1), wherein the first horizontal electron 1-electron 1 microwave resonant frequency (f) with first horizontal modulation is used. MWH1 The first horizontal current (IH1) is modulated. Therefore, a first horizontal current pulse train or current pulse is injected into the first horizontal line (LH1). According to an exemplary design, all qubits of the n-bit quantum register (NBQUREG) along the first horizontal line (LH1) are thus exposed to the resulting magnetic field. Furthermore, this exemplary method includes using a first vertical electron-electron-1 microwave resonant frequency (f) with a first vertical modulation. MWV1The first vertical current component of the modulated first vertical current (IV1) temporarily energizes the first vertical line (LV1) of the n-bit quantum register (NBQUREG). Therefore, the magnetic field of this first vertical current component (IV1) primarily affects the first quantum dot (NV1) of the first quantum bit (QUB1), and to a lesser extent, the adjacent quantum dots of adjacent qubits, with the effect decreasing rapidly with increasing distance. Thus, a first vertical current pulse train or pulse is injected into the first vertical line (LV1).

[0469] To avoid addressing other quantum dots of n qubits (QUB1 to QUBn) via vertical and / or horizontal current pulses, particularly adjacent quantum dots of adjacent qubits, the resonant frequencies of these unaddressed qubits are intentionally detuned. For example, this detuning can be accomplished by a static DC current in the vertical line associated with these unaddressed qubits or by an electrostatic potential in these vertical lines that causes an electric field at the location of the quantum dots of these unaddressed qubits, thereby detuning these resonant frequencies. This detuning causes these detuned quantum dots to no longer resonate with the vertical electron 1-electron 1 microwave resonant frequency (f...). MWV1 ) and / or the horizontal electron 1-electron 1 microwave resonance frequency (f MWH1 Resonance. Therefore, the quantum information of these detuned qubits of n qubits (QUB1 to QUBn) is not affected by vertical current pulses and / or horizontal current pulses.

[0470] Therefore, this function is disclosed here, which corresponds to the function of the address decoder in a traditional computer with a von Neumann or Harvard architecture.

[0471] The method for selecting one or more individual qubits from the set of n qubits in an n-bit quantum register (NBQUREG) is an important aspect of the technical teaching presented in this paper. With the aid of this method, individual qubits, as well as groups of two or more qubits, such as a single two-bit quantum register in a multi-bit quantum register, can be addressed by detuning unaddressed qubits and controlling them at the appropriate resonant frequency.

[0472] The detuning is explained in the pairing of the first qubit (QUB1) and the second qubit (QUB2). This can be extended to other pairings, such as the i-th qubit (QUBi) and the j-th qubit (QUBj). Thus, for example, k qubits can be addressed, and nk qubits of the exemplary n-bit quantum register (NBQUREG) can be detuned, thereby allowing only k qubits of the exemplary n-bit quantum register (NBQUEREG) to be addressed by n qubits (QUB1 to QUBn). Particularly preferably, k = 1 is chosen.

[0473] For example, this detuning of the resonant frequency is preferably performed by additionally energizing the first horizontal line (LH1) with the first horizontal DC component (IHG1) of the first horizontal current (IH1) and / or by additionally energizing the first vertical line (LV1) with the first vertical DC component (IVG1) of the first vertical current (IV1), wherein the first horizontal DC component (IHG1) may have a first horizontal current value of 0 A, and the first vertical DC component (IVG1) may also have a first vertical current value of 0 A. Now, to detune the other qubits in the n qubits (QUB1 to QUBn), for example, additionally energizing the second vertical line (LV2) with the second vertical DC component (IVG2), thereby giving the second vertical DC component a second vertical current value that deviates from the first vertical current value. This deviation of the second vertical current value from the first vertical current value causes the resonant frequency of the first quantum dot (NV1) of the first qubit (QUB1) to deviate from the resonant frequency of the second quantum dot (NV2) of the second qubit (QUB2).

[0474] As previously mentioned, this method can also be used for other qubit pairings. The selective control method is based on achieving the first vertical electron-electron-1 microwave resonance frequency (f) of the first qubit (QUB1). MWV1 The second vertical electron-electron 1 microwave resonance frequency (f) relative to the second quantum bit (QUB2) is... MWV2 The detuning is used to select either the first quantum bit (QUB1) or the second quantum bit (QUB2).

[0475] As before, it is useful to manipulate quantum dots of qubits using circularly polarized electromagnetic waves. Therefore, if the first horizontal modulation phase shifts relative to the first vertical modulation at the first horizontal electron-1 microwave resonant frequency (f... MWH1 The period of + / -π / 2 is convenient.

[0476] For the same reason, the microwave resonant frequency (f) of the first vertical electron 1-electron 1 is particularly preferred. MWV1 ) equals the microwave resonance frequency of the first level electron 1 - electron 1 (f MWH1).

[0477] Similarly, it is particularly advantageous if the first vertical current component is pulsed with a first vertical current pulse having a first pulse duration and the first horizontal current component is also pulsed with a first horizontal current pulse having a first pulse duration.

[0478] As previously stated, if the first vertical current pulse is phase-shifted relative to the first horizontal current pulse by the first horizontal electron 1-electron 1 microwave resonant frequency (f) MWH1 The period of + / -π / 2 is useful.

[0479] It is also particularly convenient if the duration of the first timing pulse has a first pulse duration corresponding to a phase difference of π / 4 or π / 2 (Hadamard gate) or 3π / 4 or π (NOT gate) of the Rabi oscillation of the first quantum dot (NV1), and / or if the duration of the first timing pulse has a first pulse duration corresponding to a phase difference of an integer multiple of π / 4 of the Rabi oscillation of the first quantum dot (NV1).

[0480] Control methods for different simultaneous control of the first and second single qubits of a quantum register

[0481] In this section, we will now discuss how to parallelize the control of a single qubit (QUBj) of the n-bit quantum register (NBQUREG) described in the previous section with n qubits (QUB1 to QUBn), so that two distinct qubits in the n-bit quantum register (NBQUREG) can be addressed differently without significantly modifying the other n-2 qubits of the n-bit quantum register (NBQUREG). Mutual interference is still acceptable for now. Therefore, the focus of this section is initially only on the control of the second qubit. Here, the method is based on the method described immediately afterward. As an example, it is assumed here that the first qubit (QUB1) and the second qubit (QUB2) of the n-bit quantum register (NBQUREG) will be driven, while the other qubits (QUB3 to QUBn) of the n-bit quantum register (NBQUREG) will be unaffected. Instead of these qubits (QUB1, QUB2), other qubit pairs and / or more than two qubits can also be manipulated. In this regard, the combination of the first qubit (QUB1) and the second qubit (QUB2) discussed here is merely exemplary. The content described below applies accordingly. Therefore, this paper describes a differential control method for the first qubit (QUB1) and the second qubit (QUB2) of an n-bit quantum register (NBQUREG) with n as a positive integer, as previously described. In addition to the current used to control the first qubit (QUB1) as described in the previous section, other lines are now energized. Therefore, the method includes the step of using a second-level electron-1 microwave resonant frequency (f) with second-level modulation. MWH2 The second horizontal current component of the modulated second horizontal current (IH2) is additionally energized to the second horizontal line (LH2), and the second vertical electron 1-electron 1 microwave resonant frequency (f) with the second vertical modulation is used. MWV2 The second vertical current component of the modulated second vertical current (IV2) is additionally energized to the second vertical line (LV2).

[0482] In order to generate a left- or right-polarized electromagnetic wave at the location of the second quantum dot (NV2) of the second quantum bit (QUB2), the second horizontal modulation is preferably phase-shifted relative to the second vertical modulation at the second horizontal electron 1-electron 1 microwave resonant frequency (f). MWH2 The period of + / -π / 2 is useful.

[0483] Similarly, preferably, the second vertical electron 1-electron 1 microwave resonant frequency (f MWV2 ) equals the second-level electron 1-electron 1 microwave resonance frequency (f MWH2 ), to ensure this phase relationship.

[0484] Therefore, it is suggested that, preferably, the second vertical current component is pulsed with a second vertical current pulse having a second pulse duration, and the first horizontal current component is pulsed with a second horizontal current pulse having a second pulse duration.

[0485] Preferably, the second vertical current pulse is phase-shifted relative to the second horizontal current pulse at the second vertical electron 1-electron 1 microwave resonant frequency (f). MWV2 The period of + / -π / 2 of the second quantum bit (QUB2) results in the circular polarization of the electromagnetic field at the location of the second quantum dot (NV2) of the second quantum bit (QUB2).

[0486] Now, in order to perform quantum operations, the duration of the second pulse needs to be appropriately selected. Therefore, preferably, the duration of the second timing pulse has a second pulse duration corresponding to a phase difference of π / 4 or π / 2 (Hadamard gate) or 3π / 4 or π (NOT gate) of the Rabi oscillation of the second quantum dot (NV2), and / or the duration of the second timing pulse has a second pulse duration corresponding to a phase difference of an integer multiple of π / 4 of the Rabi oscillation of the second quantum dot (NV2).

[0487] Therefore, the pulse duration of π / 2 corresponds to the Hadamard gate, also known as the Hadamard operation. It rotates the quantum information of the second quantum dot (NV2) of the second qubit (QUB2) by 90°.

[0488] Selective control q

[0489] In this section, we now discuss how to control a single qubit (QUBj) of an n-bit quantum register (NBQUREG) in parallel with the n qubits (QUB1 to QUBn) described in previous sections without significantly affecting the (n-1) unaddressed qubits. Here, the method builds upon the one just described above. As an example, it is assumed that the first qubit (QUB1) and the second qubit (QUB2) of the n-bit quantum register (NBQUREG) will be addressed. Instead of these qubits, other qubit pairs and / or more than two qubits can be manipulated. The following description applies accordingly.

[0490] The method described here for synchronously controlling an exemplary first qubit (QUB1) and an exemplary second qubit (QUB2) of an n-bit quantum register (NBQUREG) is based on the previously described method. It is now assumed that the vertical lines are also energized, and the horizontal lines are independent. The method then includes an additional step to use the second level electron-1-electron-1 microwave resonant frequency (f) modulated with the second level. MWH2The second horizontal current component of the modulated second horizontal current (IH2) is additionally energized to the second horizontal line (LH2) of the second quantum bit (QUB2), and the second vertical electron 1-electron 1 microwave resonant frequency (f) with second vertical modulation is used. MWV2 The second vertical current component of the modulated first vertical current (IV1) is additionally energized to the first vertical line (LV1). Preferably, the second horizontal modulation is phase-shifted relative to the second vertical modulation to the second horizontal electron 1-electron 1 microwave resonant frequency (f). MWH2 The period of ) is + / -π / 2. Also preferably, the second vertical electron 1-electron 1 microwave resonant frequency (f) is... MWV2 ) equals the second-level electron 1-electron 1 microwave resonance frequency (f MWH2 The second vertical current component is preferably pulsed with a second vertical current pulse having a second pulse duration. The first horizontal current component is preferably pulsed with a second horizontal current pulse having a second pulse duration.

[0491] Preferably, the second vertical current pulse is phase-shifted relative to the second horizontal current pulse at the second vertical electron 1-electron 1 microwave resonant frequency (f). MWV2 The second timing pulse duration preferably has a second pulse duration corresponding to a phase difference of π / 4 or π / 2 (Hadamard gate) or 3π / 4 or π (NOT gate) of the Rabi oscillation of the second quantum dot (NV2), and / or a second pulse duration corresponding to a phase difference of an integer multiple of π / 4 of the Rabi oscillation of the second quantum dot (NV2).

[0492] A selective control method for synchronously controlling a second single qubit and a first single qubit of a quantum register without substantially affecting the other qubits of the quantum register.

[0493] The process described now is the same as the one just described, except that the first quantum bit (QUB1) and the second quantum bit (QUB2) are interchanged.

[0494] Therefore, as previously described, this is a method for the first qubit (QUB1) and the second qubit (QUB2) of a differentially controlled n-bit quantum register (NBQUREG). The method includes the following steps: using a second-level electron-1 microwave resonant frequency (f) with a second-level modulation. MWH2 The second horizontal current component of the modulated first horizontal current (IH1) is energized to the first horizontal line (LH1), and the second vertical electron-electron-1 microwave resonant frequency (f) with the second vertical modulation is used. MWV2 The second vertical current component of the modulated second vertical current (IV2) is additionally energized to the second vertical line (LV2).

[0495] As previously stated, preferably, the second horizontal modulation is phase-shifted relative to the second vertical modulation at the second vertical electron 1-electron 1 microwave resonant frequency (f). MWV2 ) and / or the second level electron 1-electron 1 microwave resonant frequency (f MWH2 The period of ) is + / -90°.

[0496] Preferably, the second vertical electron 1-electron 1 microwave resonant frequency (f MWV2 ) equals the second-level electron 1-electron 1 microwave resonance frequency (f MWH2 As previously described, preferably, the second vertical current component is pulsed with a second vertical current pulse having a second pulse duration, and the second horizontal current component is pulsed with a second horizontal current pulse having a second pulse duration.

[0497] Preferably, again, the second vertical current pulse is phase-shifted relative to the second horizontal current pulse at the second vertical electron 1-electron 1 microwave resonant frequency (f). MWV2 The period of the second timing pulse is + / -π / 2. Preferably, the second timing pulse duration has a second pulse duration corresponding to a phase difference of π / 4 or π / 2 (Hadamard gate) or 3π / 4 or π (NOT gate) of the Rabi oscillation of the second quantum dot (NV2) and / or a second pulse duration corresponding to a phase difference of an integer multiple of π / 4 of the Rabi oscillation of the second quantum dot (NV2).

[0498] The exchange operation between the first quantum dot of the first qubit of the quantum register and the second quantum dot of the second qubit of the quantum register.

[0499] Non-selective NV1 and NV2 qubit coupling method

[0500] Below in this section, a method is proposed for controlling the pair of the first qubit (QUB1) and the second qubit (QUB2) of the two-bit quantum register (QUREG) of the previously described n-bit quantum register (NBQUREG). The proposed method preferably includes: at least temporarily energizing the first horizontal line (LH1) of the quantum register (QUREG) with a first horizontal current component (IH1), the first horizontal current component being the first horizontal electron 1-electron 2 microwave resonant frequency (f) having a first horizontal modulation. MWHEE1Modulated by a first vertical electron 1-electron 2 microwave resonant frequency (f) having a first vertical modulation. Here, for the sake of simplicity, it is again exemplarily assumed that an exemplary n qubits (QUB1 to QUBn) and their n quantum dots (NV1 to NVn) are again exemplarily arranged along a first horizontal line (LH1), and each of the n qubits (QUB1 to QUBn) has one of the n vertical lines (LV1 to LVn). This exemplary arrangement is for illustration only. Other arrangements and interconnections of the horizontal and vertical lines are clearly possible and are explicitly covered by the claims. Furthermore, the method preferably includes: using a first vertical electron 1-electron 2 microwave resonant frequency (f) having a first vertical modulation. MWVEE1 The first vertical current component of the modulated first vertical current (IV1) is at least temporarily energized by the first vertical line (LV1) of the quantum register (QUREG), and at the microwave resonant frequency (f) of the first level electron 1-electron 2 modulated with the second level. MWHEE1 The second horizontal current component of the modulated second horizontal current (IH2) is at least temporarily energized by the second horizontal line (LH2) of the quantum register (QUREG). Furthermore, an exemplary method includes: using the microwave resonant frequency (f) of the first vertical electron 1-electron 2 with second vertical modulation. MWVEE1 The second vertical current component of the modulated second vertical current (IV2) is at least temporarily energized through the second vertical line (LV2) of the quantum register (QUREG). Preferably, as described above, for example, the second horizontal line (LH2) is equivalent to the first horizontal line (LH1). The second horizontal current (IH2) is then equal to the first horizontal current (IH1). Therefore, when the first horizontal current (IH1) is fed in, the second horizontal current (IH2) has already been fed in.

[0501] In the example presented in this paper, it is exemplarily assumed that n-2 other horizontal lines (LH3 to LHn) of a quantum register (QUREG) with n qubits (QUB1 to QUBn) are connected sequentially to form and use a shared first horizontal line (LH1). As mentioned earlier, only the first qubit (QUB1) and the second qubit (QUB2) are considered representative of other qubit pairings. It is explicitly emphasized that other functional pairings are included. If the distance between two different qubits (QUBj, QUBi, where i≠j) is too large, i.e., greater than the electron-electron coupling distance, coupling between these two different qubits (QUBj, QUBi, where i≠j) is impossible.

[0502] Of course, the arrangement of qubits can also be selectively and / or partially along vertical lines simultaneously. In this case, the second vertical line (LV2) will be equivalent to the first vertical line (LV2). The second vertical current (IV2) will be equal to the first vertical current (IV1), and the second vertical current (IV2) will be injected along with the injection of the first vertical current (IV1).

[0503] Particularly preferably, the first horizontal modulation is phase-shifted relative to the first vertical modulation at the first horizontal electron 1-electron 2 microwave resonant frequency (f). MWHEE1 The period of + / -π / 2, and / or the phase shift of the second horizontal modulation relative to the second vertical modulation of the second horizontal electron 1-electron 2 microwave resonant frequency (f) MWHEE2 The period of π / 2 is + / -π / 2.

[0504] Preferably, the first horizontal line (LH1) is additionally energized at least intermittently with a first horizontal DC component (IHG1) of the first horizontal current (IH1), the first horizontal DC component (IHG1) having a first horizontal current value. The first horizontal DC current component (IHG1) can thus have a first horizontal current value of 0 A. This DC current offset can be used to change the microwave resonant frequency (f) of the second horizontal electron 1-electron 2. MWHEE2 ) and the microwave resonance frequency of the first electron 1-electron 1 (f MWH1 This causes these resonant frequencies to become detuned relative to the other resonant frequencies of the proposed device. Therefore, these additional DC components in the horizontal and vertical lines provide a crucial means of addressing individual qubits and / or qubit registers within a larger quantum register and suppressing interference with other qubits and / or qubit registers within the larger quantum register. As used herein, a qubit register refers to a subset of the qubits of a larger quantum register that forms at least one other quantum register among themselves. Thus, a quantum register with these three qubits has at least three qubit registers if all three qubits can be coupled together.

[0505] The proposed method also preferably includes at least temporarily energizing the first vertical line (LV1) with a first vertical DC component (IVG1) of the first vertical current (IV1). The first vertical DC component (IVG1) has a first vertical current value similar to that previously described. In this case, the first vertical DC current component (IVG1) may have a first vertical current value of 0A.

[0506] The proposed method also preferably includes at least temporarily energizing the second horizontal line (LH2) with a second horizontal DC component (IHG2) of the second horizontal current (IH2), wherein the second horizontal DC component (IHG2) has a second horizontal current value, and wherein the second horizontal DC component (IHG2) may have a second horizontal current value of 0A.

[0507] The proposed method also preferably includes at least temporarily energizing the second vertical line (LV2) with a second vertical DC component (IVG2) of the second vertical current (IV2), wherein the second vertical DC component (IVG2) has a second vertical current value, and wherein the second vertical DC component (IVG2) may have a first vertical current value of 0A.

[0508] Preferably, the first horizontal current value is equal to the second horizontal current value, and / or the first vertical current value is equal to the second vertical current value.

[0509] Preferably, the microwave resonant frequency of the first vertical electron 1-electron 1 (f) MWV1 ) equals the microwave resonance frequency of the first level electron 1 - electron 2 (f MWHEE1 ).

[0510] Preferably, the first vertical current component is pulsed with a first vertical current pulse having a first pulse duration, and / or the first horizontal current component is pulsed with a first horizontal current pulse having a first pulse duration.

[0511] Typically, the second vertical current component is pulsed with a second vertical current pulse having a second pulse duration, and / or the second horizontal current component is pulsed with a second horizontal current pulse having a second pulse duration.

[0512] Typically, in a similar manner, the first vertical current component is pulsed with a first vertical current pulse having a first pulse duration, and the first horizontal current component is pulsed with a first horizontal current pulse having a first pulse duration.

[0513] Preferably, the second vertical current component is pulsed with a second vertical current pulse having a second pulse duration, and / or the second horizontal current component is pulsed with a second horizontal current pulse having a second pulse duration.

[0514] Preferably, the first vertical current pulse is phase-shifted relative to the first horizontal current pulse at the microwave resonant frequency of electron 1-electron 2 (f). MWHEE1 The period of the second vertical current pulse is + / -π / 2, and / or the phase shift of the second vertical current pulse relative to the second horizontal current pulse is the second electron 1-electron 2 microwave resonant frequency (f). MWHEE2 The period of π / 2 is + / -π / 2.

[0515] Preferably, the first timing pulse duration has a first pulse duration corresponding to a phase difference of π / 4 or π / 2 (Hadamard gate) or 3π / 4 or π (NOT gate) of the Rabi oscillation of the quantum dot pair of the first quantum dot (NV1) and the second quantum dot (NV2), and / or a first pulse duration corresponding to a phase difference of an integer multiple of π / 4 of the Rabi oscillation of the quantum dot pair of the first quantum dot (NV1) and the second quantum dot (NV2).

[0516] Preferably, the second timing pulse duration has a second pulse duration corresponding to the phase difference of the Rabi oscillation of the quantum dot pair of the first quantum dot (NV1) and the second quantum dot (NV2) at π / 4 or π / 2 (Hadamard gate) or 3π / 4 or π (NOT gate), and / or a second timing pulse duration corresponding to the phase difference of the Rabi oscillation of the quantum dot pair of the first quantum dot (NV1) and the second quantum dot (NV2) at an integer multiple of π / 4.

[0517] Preferably, the duration of the first timing pulse is equal to the duration of the second timing pulse.

[0518] Selective qubit coupling method of first quantum dot and second quantum dot

[0519] A variation of the control method for the pair of first qubits (QUB1) and second qubits (QUB2) of an n-bit quantum register (NBQUREG) is now described. Therefore, the gating is selective relative to the other qubits (QUBj) of the n-bit quantum register (NBQUREG). The method includes the additional steps of: at least temporarily energizing a first horizontal line (LH1) with a first horizontal DC component (IHG1) of a first horizontal current (IH1) and at least temporarily energizing a first vertical line (LV1) with a first vertical DC component (IVG1) of a first vertical current (IV1), wherein the first horizontal DC component (IHG1) has a first horizontal current value and wherein the first horizontal DC component (IHG1) can have a first horizontal current value of 0 A, wherein the first vertical DC component (IVG1) has a first vertical current value and wherein the first vertical DC component (IVG1) can have a first vertical current value of 0 A. Furthermore, the proposed processing variation includes at least temporarily energizing the second horizontal line (LH2) with a second horizontal DC current component (IHG2) of the second horizontal current (IH2), wherein the second horizontal DC current component (IHG2) has a second horizontal current value, and wherein the second horizontal DC current component (IHG2) may have a second horizontal current value of 0 A. Additionally, the proposed processing variation includes at least temporarily energizing the second vertical line (LV2) with a second vertical DC component (IVG2) of the second vertical current (IV2), wherein the second vertical DC component (IVG2) has a second vertical current value, and wherein the second vertical DC component (IVG2) may have a first vertical current value of 0 A. Similarly, the proposed method enhancement includes at least temporarily energizing the j-th horizontal line (LHj) of another j-th qubit (QUBj) (if present) of the n-bit quantum register (NBQUREG) with a j-th horizontal DC component (IHGj), wherein the j-th horizontal DC component (IHGj) has a j-th horizontal current value. Finally, the proposed processing variation preferably includes at least temporarily energizing the j-th vertical line (LVj) of another j-th qubit (QUBj) of the n-bit quantum register (NBQUREG) with the j-th vertical DC component (IVGj), wherein the j-th vertical DC component (IVGj) has the j-th vertical current value.

[0520] Preferably, the first vertical current value differs from the j-th vertical current value, and / or the second vertical current value differs from the j-th vertical current value, and / or the first horizontal current value differs from the j-th horizontal current value, and / or the second horizontal current value differs from the j-th horizontal current value. Therefore, the resonant frequencies are detuned relative to each other, which allows for targeted addressing of the quantum dots and / or quantum registers of the quantum register.

[0521] General methods for entanglement of two quantum dots

[0522] Here, a method is now described for entangled with the quantum information (in particular the spin of its first electronic configuration) of the first quantum dot (NV1) of the first quantum bit (QUB1) of the n-bit quantum register (NBIQUREG) of the non-uniform n-bit quantum register (NBIQUREG) or the quantum information (in particular the second spin of the second electronic configuration of the second quantum dot (NV2) of the second quantum bit (QUB2) of the non-uniform n-bit quantum register (NBIQUREG), which is referred to below as an electron emission operation.

[0523] In this example, the first quantum dot (NV1) of the first qubit (QUB1) of the n-bit quantum register (NBQUREG) and the second quantum dot (NV1) of the second qubit (QUB2) of the n-bit quantum register (NBQUREG) are arbitrarily chosen for illustration. However, the focus is on all coupleable pairs or n-tuples of two or more quantum dots of two or more qubits in the n-bit quantum register (NBQUREG).

[0524] Methods for entangled quantum information of a first quantum dot (NV1) with quantum information of a second quantum dot (NV2) typically include methods for resetting an electron-electron quantum register (NBQUREG) or a non-uniform quantum register (IQUREG) to bring the first and second qubits into a defined state. Following this initialization, a Hadamard gate is typically executed as a step from the quantum part registers of the first and second qubits. Then, preferably, a CNOT gate is executed for the quantum register. Alternatively, theoretically, another method can be used to entangle the quantum information of the first quantum dot (NV1) of the first qubit (QUB1) of each quantum register (QUREG) of the non-uniform quantum register (IQUREG), particularly the first spin of the first electronic configuration of the first quantum dot (NV1), with the quantum information of the second quantum dot (NV2) of the second qubit (QUB2) of the electron-electron quantum register (QUREG) or the non-uniform quantum register (IQUREG), particularly the second spin of the second electronic configuration of the second quantum dot (NV2). For example, one could conceive of using other quantum dots for this purpose, such as those in the quantum bus (QUBUS).

[0525] Electron-nuclear exchange operation

[0526] Nuclear-electronic CNOT operation

[0527] In the following sections, we will describe the quantum information of the nuclear quantum dot (CI) of the nuclear qubit (CQUB) of the nuclear electronic quantum register (CEQUREG), particularly the quantum information of the quantum dot (NV) of the qubit (QUB) of the nuclear electronic quantum register (CEQUREG) whose nuclear spin changes, particularly the nuclear-electron CNOT operation of its electrons or their electronic configuration, which is referred to below as the nuclear-electron CNOT operation. As previously described in the selective gating method for gating a single qubit of the quantum register without significantly affecting the other qubits of the quantum register under discussion, horizontal and vertical lines are again used for gating. Therefore, the nuclear-electron CNOT operation includes the steps of injecting a horizontal current component (IH) into the horizontal line (LH) of the qubit (QUB) and injecting a vertical current component (IV) into the vertical line (LV) of the qubit (QUB), the horizontal current component having a nuclear-electron microwave resonance frequency (f). MWCE The horizontal modulation of the vertical current component has a nuclear-electron microwave resonant frequency (f). MWCE Vertical modulation.

[0528] Preferably, again in order to generate a preferred left or right polarized electromagnetic field, the vertical modulation is offset relative to the horizontal modulation from the nucleus-electron microwave resonant frequency (f). MWCE () Periodicity + / -π / 2.

[0529] Preferably, the first vertical current component is pulsed with a first vertical current pulse having a first pulse duration, and / or the first horizontal current component is pulsed with a first horizontal current pulse having a first pulse duration.

[0530] Preferably, again in order to generate a preferred left or right polarized electromagnetic field, the first vertical current pulse is phase-shifted relative to the horizontal current pulse at the microwave resonant frequency (f). MWCE The period of π / 2 is + / -π / 2.

[0531] Preferably, the first timing pulse duration has a first pulse duration corresponding to a phase difference of π / 4 or π / 2 (Hadamard gate) or 3π / 4 or π (NOT gate) of the Rabi oscillation of the quantum dot (NV1) of the nuclear quantum register (CEQUREG) and the quantum pair of the nuclear quantum dot (CQUB) of the nuclear quantum register (CEQUREG), and / or a first pulse duration corresponding to a phase difference of an integer multiple of π / 4 of the Rabi oscillation of the quantum dot (NV1) of the nuclear quantum register (CEQUREG) and the quantum pair of the nuclear quantum dot (CQUB) of the nuclear quantum register (CEQUREG).

[0532] Electronic-nuclear CNOT operation

[0533] The following describes the quantum information of the quantum dot (NV) of the qubit (QUB) of the nuclear electronic quantum register (CEQUREG), particularly the quantum information of the nuclear quantum dot (CI) of the nuclear qubit (CQUB) of the nuclear electronic quantum register (CEQUREG) whose electrons or their electronic configuration change, specifically the electron-nuclear CNOT operation of the nuclear spin of the atomic nucleus, which is referred to below as the electron-nuclear CNOT operation. The electron-nuclear CNOT operation includes the steps of injecting a horizontal current component (IH) into the horizontal line (LH) of the qubit (QUB) and injecting a vertical current component (IV) into the vertical line (LV) of the qubit (QUB), the horizontal current component having an electron-nuclear radio wave resonance frequency (f). RWEC The horizontal modulation of the vertical current component employs the electron-nuclear radio wave resonant frequency (f) RWEC Vertical modulation.

[0534] To generate a left- or right-circularly polarized electromagnetic field, the vertical modulation is preferably offset relative to the horizontal modulation from the electron-nuclear radio wave resonant frequency (f). RWEC The period of π / 2 is + / -π / 2.

[0535] Preferably, the vertical current component is pulsed with a vertical current pulse having a pulse duration, and the horizontal current component is pulsed with a horizontal current pulse having a pulse duration.

[0536] To generate a left- or right-circularly polarized electromagnetic field, the vertical current pulse is preferably phase-shifted relative to the electron-nuclear radio wave resonance frequency (f_0) of the horizontal current pulse. RWEC The period of π / 2 is + / -π / 2.

[0537] Preferably, the first timing pulse duration has a first pulse duration corresponding to the phase difference of the Rabi oscillation of the quantum dot (NV1) of the nuclear quantum register (CEQUREG) and the quantum pair of the nuclear quantum dot (CQUB) of the nuclear quantum register (CEQUREG) at π / 4 or π / 2 (Hadamard gate) or 3π / 4 or π (NOT gate), and / or a first pulse duration corresponding to the phase difference of the Rabi oscillation of the quantum dot (NV1) of the nuclear quantum register (CEQUREG) and the quantum pair of the nuclear quantum dot (CQUB) of the nuclear quantum register (CEQUREG) at an integer multiple of π / 4.

[0538] Electron-nuclear exchange operation

[0539] The following describes a method for entanglement, in particular, the nuclear spin of the nuclear qubit (CQUB) of one or more nuclear electron quantum registers (CEQUREGs) according to features 203 to 215, with the quantum information of the quantum dot (NV) of the qubit (CQUB), particularly its electrons, which is hereinafter referred to as an electron-nuclear exchange (CNOT) operation. This method thus includes steps for performing the electron-nuclear CNOT operation and steps that are immediately following or not immediately following the nuclear-electron CNOT operation.

[0540] Alternative methods for spin exchange between the atomic nucleus and electrons

[0541] The following describes an alternative method for entanglement between the quantum information of the nuclear quantum dot (CI) of the nuclear qubit (CQUB) of a nuclear electronic quantum register (CEQUREG), particularly the nuclear spin of the nucleus of the quantum dot, and the quantum information of the quantum dot (NV) of the quantum dot (QUB), particularly the electrons or their electronic configuration of the quantum dot, which is referred to below as an electron-nuclear exchange delay operation. This method involves altering the quantum information of the quantum dot (NV), particularly the quantum information of the spin state of the electrons or their electronic configuration of the quantum dot (NV), and then waiting for the nuclear spin relaxation time τ. K The steps involve utilizing the interaction between the electronic configuration or the spin of the electron and the spin of the atomic nucleus. Through radiation and precision, the atomic nucleus relaxes at the nuclear spin relaxation time τ. K The internal spin tilts to a new state based on the electronic configuration.

[0542] General methods for entanglement of atomic nuclei and electrons (nuclear-electron entanglement)

[0543] A proposed method for entanglement of the quantum information of the nuclear quantum dot (CI) of the nuclear qubit (CQUB) of a nuclear electronic quantum register (CEQUREG), particularly the nuclear spin of the nucleus of the nuclear quantum dot, with the spin entanglement of the quantum information of the quantum dot (NV) of the qubit (QUB) of the nuclear electronic quantum register (CEQUREG), particularly the spin entanglement of the electronic configuration of the quantum dot (NV) (hereinafter referred to as a nucleo-electron de-embedding operation), is characterized by including a method for resetting the nuclear electronic quantum register (CEQUREG) and a method for executing a Hadamard gate. Furthermore, the method includes a method for executing a CNOT gate. Alternatively, the method may include another method for entanglement of the quantum information of the nuclear quantum dot (CI) of the nuclear qubit (CQUB) of the nuclear electronic quantum register (CEQUREG), particularly the nuclear spin of the nucleus of the nuclear quantum dot, with the spin entanglement of the electronic configuration or electron of the qubit (QUB) of the nuclear electronic quantum register (CEQUREG), particularly the spin entanglement of the quantum dot (NV).

[0544] General quantum information exchange process between atomic nuclei and electrons

[0545] Of particular importance is the method for exchanging the quantum information of the nuclear quantum dot (CI) of the nuclear qubit (CQUB) of the nuclear electron quantum register (CEQUREG), especially the nuclear spin of the atomic nucleus of the nuclear quantum dot and the quantum information of the quantum dot (NV) of the qubit (QUB) of the nuclear electron quantum register (CEQUREG), particularly the electrons or their electronic configurations of the quantum dot, which is referred to below as a nuclear-electron exchange operation. In the sense of this paper, such a nuclear-electron exchange operation is characterized by being an electron-nuclear exchange delay operation, or it is an electron-nuclear exchange operation, or it is another method for entanglement of the quantum information of the nuclear quantum dot (CI) of the nuclear qubit (CQUB) of the nuclear electron quantum register (CEQUREG), particularly the nuclear spin of the nucleus of the nuclear quantum dot and the quantum information of the quantum dot (NV) of the qubit (QUB) of the nuclear electron quantum register (CEQUREG), particularly the electrons of the quantum dot.

[0546] Electron-nuclear quantum register radio wave control method

[0547] This section describes a method for obtaining quantum information from the quantum dot (NV) of the qubit (QUB) of the nuclear electronic quantum register (CEQUREG), particularly the quantum information of the nuclear quantum dot (CI) of the nuclear qubit (CQUB) of the nuclear electronic quantum register (CEQUREG), specifically the nuclear spin of the atomic nucleus of the nuclear quantum dot. This method preferably includes the step of: using a horizontally modulated electron-nuclear radio wave resonant frequency (f... RWECThe horizontal current (IH) with a horizontal current component modulated by the vector subbit (QUB) is energized by the horizontal line (LH), and at the resonant frequency (f) of the electron-nuclear radio wave with vertical modulation. RWEC The step of energizing the vertical line (LV) of the vertical current (IV) vector quantum bit (QUB) modulated with a vertical current component. Therefore, as previously mentioned, the horizontal and vertical lines are again used to drive the nuclear electron quantum register (CEQUREG). When a combination of the corresponding horizontal and vertical lines can drive multiple nuclear electron quantum registers (CEQUREG), the electron-nuclear radio wave resonance frequency (f) is selected. RWEC The correct nuclear electron quantum register (CEQUREG) is selected by means of the nuclear quantum dot (CI) and the quantum dot (NV). Since the actual distance between the nuclear quantum dot (CI) and the quantum dot (NV) varies, the coupling strength between the quantum dot (NV) and the nuclear quantum dot (CI) varies depending on the nuclear quantum dot. Therefore, for multiple pairs of quantum dots (NV) and nuclear quantum dots (CI) that can be addressed via horizontal and vertical lines, the electron-nuclear radio wave resonance frequency (f...) is... RWEC Each pair of these quantum dots (NV) and nuclear quantum dots (CI) is also different. Therefore, this can be used for targeted individual nuclear quantum dots.

[0548] In order to regenerate a left- or right-polarized electromagnetic field, if the horizontal modulation of the horizontal current component is phase-shifted relative to the vertical modulation of the vertical current component in time at the electron-nuclear radio wave resonance frequency (f... RWEC If the period is + / -π / 2, then this is also beneficial.

[0549] Preferably, the vertical current component is pulsed with a vertical current pulse, and / or the horizontal current component is pulsed with a horizontal current pulse.

[0550] Preferably, the second vertical current pulse is phase-shifted relative to the second horizontal current pulse at the electron-nuclear radio wave resonance frequency (f). RWEC The period of π / 2 is + / -π / 2.

[0551] Preferably, the timing pulse duration τ of the horizontal current pulse and the vertical current pulse is... RCE The pulse duration corresponding to the phase difference of the Rabi oscillation period of the system consisting of the quantum dot (NV) of the quantum bit (...

Claims

1. A quantum bus (QUBUS), comprising n qubits (QUB1 to QUBn), each of said qubits respectively comprises a quantum dot (NV1 to NVn), n is a positive integer, and n>2, comprising a first nuclear qubit (CQUB1), comprising an nth nuclear qubit (CQUBn), wherein said n qubits (QUB1 to QUBn) are numberable from 1 to n, in, 1<j<n, each j-th qubit (QUBj) has a preceding qubit (QUB(j-1)), and wherein each j-th qubit (QUBj) has a succeeding qubit (QUB(j+1)), and wherein the first qubit (QUB1) and the first nuclear qubit (CQUB1) form a first nuclear-electron quantum register (CEQUREG1), and wherein the nth qubit (QUBn) and said nth nuclear qubit (CQUBn) form an nth nuclear-electron quantum register (CEQUREGn), and wherein each said j-th qubit (QUBj) forms a (j-1)-th quantum register (QUREG(j-1)) with its preceding qubit (QUB(j-1)), and forms a j-th quantum register (QUREGj) with its succeeding qubit (QUB(j+1)), resulting in a closed chain having two nuclear-electron quantum registers (CEQUREG1, CEQUREGn) and n-1 quantum registers (QUREG1 to QUREG(n-1)) located between said first nuclear qubit (CQUB1) and said nth nuclear qubit (CQUBn), and wherein the distance between the first nuclear quantum dot (CI1) and the first quantum dot (NV1) is sufficiently small to allow the state of said first quantum dot (NV1) and the state of said first nuclear quantum dot (CI1) to couple or entangle, and wherein the distance between the nth nuclear quantum dot (CIn) and the nth quantum dot (NVn) is sufficiently small such that the state of said nth quantum dot (NVn) and the state of said nth nuclear quantum dot (CIn) can couple or entangle, and wherein the distance between the j-th quantum dot (NVj) and the (j+1)-th quantum dot is extremely small, and 1 j < n, such that the state of the j-th quantum dot (NVj) and the state of the (j+1)-th quantum dot (NV(j+1)) can be coupled or entangled, characterized in that, the distance between said first nuclear quantum dot (CI1) and said nth nuclear quantum dot (CIn) is such that the state of said first nuclear quantum dot (CI1) and the state of said nth nuclear quantum dot (CIn) cannot couple or entangle, and the distance between said first quantum dot (NV1) and said nth quantum dot (NVn) is such that the state of said first quantum dot (NV1) and the state of said nth quantum dot (NVn) cannot couple or entangle, and the distance between said nth nuclear quantum dot (CIn) and said first quantum dot (NV1) is such that the state of said first quantum dot (NV1) and the state of said nth nuclear quantum dot (CIn) cannot couple or entangle, and the distance between said first nuclear quantum dot (CI1) and said nth quantum dot (NVn) is such that the state of said nth quantum dot (NVn) and the state of said first nuclear quantum dot (CI1) cannot couple or entangle, and Each of the n qubits (QUB1 to QUBn) has a means for selectively controlling the quantum dot of that qubit, and Each of the devices for selectively controlling the quantum dot has a vertical line (LV) and a horizontal line (LH).

2. The quantum bus (QUBUS) according to claim 1. in, The spatial distance between the j-th quantum dot (NVj) of the j-th quantum bit (QUBj) and the (j-1)-th quantum dot (NV(j-1)) of the preceding quantum bit (QUB(j-1)) is less than 50 nm, thereby ensuring the mutual magnetic influence of the quantum states of the (j-1)-th quantum dot (NV(j-1)) and the j-th quantum dot (NVj).

3. The quantum bus (QUBUS) according to claim 2. in, The spatial distance between the j-th quantum dot (NVj) of the j-th quantum bit (QUBj) and the (j-1)-th quantum dot (NV(j-1)) of the preceding quantum bit (QUB(j-1)) is less than 30 nm.

4. The quantum bus (QUBUS) according to claim 3. in, The spatial distance between the j-th quantum dot (NVj) of the j-th quantum bit (QUBj) and the (j-1)-th quantum dot (NV(j-1)) of the preceding quantum bit (QUB(j-1)) is less than 20 nm.

5. The quantum bus (QUBUS) according to claim 4. in, The spatial distance between the j-th quantum dot (NVj) of the j-th quantum bit (QUBj) and the (j-1)-th quantum dot (NV(j-1)) of the preceding quantum bit (QUB(j-1)) is less than 10 nm.

6. The quantum bus (QUBUS) according to claim 5. in, The spatial distance between the j-th quantum dot (NVj) of the j-th quantum bit (QUBj) and the (j-1)-th quantum dot (NV(j-1)) of the preceding quantum bit (QUB(j-1)) is less than 5 nm.

7. The quantum bus (QUBUS) according to claim 6. in, The spatial distance between the j-th quantum dot (NVj) of the j-th quantum bit (QUBj) and the (j-1)-th quantum dot (NV(j-1)) of the preceding quantum bit (QUB(j-1)) is less than 2 nm.

8. The quantum bus (QUBUS) according to any one of claims 1 to 7. in, The spatial distance between the j-th quantum dot (NVj) of the j-th quantum bit (QUBj) and the (j+1)-th quantum dot (NV(j+1)) of the successor quantum bit (QUB(j+1)) is less than 50 nm, thereby ensuring the mutual magnetic influence of the quantum states of the j-th quantum dot (NVj) and the (j+1)-th quantum dot (NV(j+1)).

9. The quantum bus (QUBUS) according to claim 8. in, The spatial distance between the j-th quantum dot (NVj) of the j-th quantum bit (QUBj) and the (j+1)-th quantum dot (NV(j+1)) of the successor quantum bit (QUB(j+1)) is less than 30 nm.

10. The quantum bus (QUBUS) according to claim 9. in, The spatial distance between the j-th quantum dot (NVj) of the j-th quantum bit (QUBj) and the (j+1)-th quantum dot (NV(j+1)) of the successor quantum bit (QUB(j+1)) is less than 20 nm.

11. The quantum bus (QUBUS) according to claim 10. in, The spatial distance between the j-th quantum dot (NVj) of the j-th quantum bit (QUBj) and the (j+1)-th quantum dot (NV(j+1)) of the successor quantum bit (QUB(j+1)) is less than 10 nm.

12. The quantum bus (QUBUS) according to claim 11. in, The spatial distance between the j-th quantum dot (NVj) of the j-th quantum bit (QUBj) and the (j+1)-th quantum dot (NV(j+1)) of the successor quantum bit (QUB(j+1)) is less than 5 nm.

13. The quantum bus (QUBUS) according to claim 12. in, The spatial distance between the j-th quantum dot (NVj) of the j-th quantum bit (QUBj) and the (j+1)-th quantum dot (NV(j+1)) of the successor quantum bit (QUB(j+1)) is less than 2 nm.

14. The quantum bus (QUBUS) according to any one of claims 1 to 7. in, The first distance (sp 12) between the first quantum dot (NV1) and the second quantum dot (NV2) is small enough that the magnetic field and / or state of the second quantum dot (NV2) affects the behavior of the first quantum dot (NV1) at least temporarily, and / or the magnetic field and / or state of the first quantum dot (NV1) affects the behavior of the second quantum dot (NV2) at least temporarily.

15. The quantum bus (QUBUS) according to any one of claims 1 to 7. in, The nth distance (sp(n-1)n) between the (n-1)th quantum dot (NV(n-1)) and the nth quantum dot (NVn) is small enough that the magnetic field of the (n-1)th quantum dot (NV(n-1)) at least temporarily affects the behavior of the nth quantum dot (NVn), and / or the magnetic field of the nth quantum dot (NVn) at least temporarily affects the behavior of the (n-1)th quantum dot (NV(n-1)).

16. The quantum bus (QUBUS) according to any one of claims 1 to 7. in, The chain length distance (sp1n) between the first quantum dot (NV1) and the nth quantum dot (NVn) is chosen to be large enough that the magnetic field of the first quantum dot (NV1) does not directly affect the behavior of the nth quantum dot (NVn).

17. The quantum bus (QUBUS) according to any one of claims 1 to 7. in, The vertical line (LV) and the horizontal line (LH) of the device for selectively controlling quantum dots (NVj) are configured to apply a static bias potential to the associated quantum dot (NVj), thereby detuning a single quantum dot of the quantum network.

18. The quantum bus (QUBUS) according to claim 17. in, The n-bit electron-electron quantum register (NBQUREG) of the quantum bus (QUBUS) can be divided into an m-bit quantum register and a p-bit quantum register, where m+p=n.

19. The quantum bus (QUBUS) according to any one of claims 1 to 7. in, The quantum dots (NV1 to NVn) are arranged in a one-dimensional lattice (QREG1D) or a two-dimensional lattice (QREG2D), wherein the one-dimensional lattice (QREG1D) or the two-dimensional lattice (QREG2D) includes at least one of twists, branches and loops in the chain of quantum dots, such that the quantum bus (QUBUS) forms part of a quantum network (QUNET).

20. The quantum bus (QUBUS) according to any one of claims 1 to 7. in, A closed chain of n-1 electron-electron quantum registers (QUREG1 to QUREG(n-1)) and two nuclear-electron quantum registers (CEQUREG1, CEQUREGn) can transmit the dependency between nuclear qubits (CQUB1, CQUBn).

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