Substrate processing method, substrate processing apparatus, and storage medium
CN115315782BActive Publication Date: 2026-07-14TOKYO ELECTRON LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TOKYO ELECTRON LTD
- Filing Date
- 2021-03-19
- Publication Date
- 2026-07-14
AI Technical Summary
Technical Problem
Existing technologies struggle to form minute patterns with high precision on substrates, and resist films are prone to uneven composition and separation during heating.
Method used
After forming an interface control film on the substrate surface, the substrate is heated and then exposed using EUV light. The formation of the control film inhibits the unevenness and separation of the resist film composition. Heating is performed using atmospheres such as organic solvent vapor, nitrogen, and carbon dioxide.
Benefits of technology
It enables the high-precision formation of micro-patterns on resist films, avoids component inhomogeneity and separation caused by heating, simplifies light intensity adjustment, and improves the accuracy of pattern formation.
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Figure CN115315782B_ABST
Abstract
The substrate processing method of the present application includes: a step of forming a resist film on a surface of a substrate; a step of supplying a treatment liquid containing a water-soluble polymer to the surface of the resist film of the substrate to form an interface control film; a step of heating the substrate on which the interface control film is formed; and a step of exposing the resist film formed on the heated substrate.
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