Substrate processing apparatus, substrate processing method, method for manufacturing semiconductor device, storage medium, and inner tube

Abstract

The present application provides a kind of substrate processing device, it has: inner tube, inside has the substrate storage area of being arranged as multiple layers with the horizontal posture of multiple substrates along predetermined arrangement direction is stored;The outer tube being arranged outside the inner tube;Gas supply port is arranged along the arrangement direction with multiple in the side wall of inner tube;First exhaust port is arranged along the arrangement direction with multiple in the side wall of inner tube;Second exhaust port is arranged in the end side of outer tube along the arrangement direction;And the flow of gas in the annular space between inner tube and outer tube is controlled by the flow regulation mechanism, the flow regulation mechanism has fin, when the first exhaust port farthest from second exhaust port in multiple first exhaust port is set as exhaust port A, and the gas supply port opposite exhaust port A in multiple gas supply port is set as gas supply port A, the fin surrounds at least a part of the outer periphery of gas supply port A in the vicinity of gas supply port A.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus, a substrate processing method, a method for manufacturing a semiconductor device, a storage medium, and an inner tube. Background Technology

[0002] As part of the manufacturing process of a semiconductor device, the following steps are sometimes performed: gas is supplied to a processing chamber that houses multiple substrates to process the substrates (see, for example, Patent Document 1).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2018-088520 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] This disclosure improves the quality of substrate processing.

[0008] Solution for solving the problem

[0009] According to one aspect of this disclosure, a substrate processing apparatus is provided, comprising:

[0010] The inner tube has a substrate storage area inside, which stores multiple substrates arranged in a horizontal orientation along a predetermined arrangement direction in multiple layers.

[0011] An outer tube, which is disposed outside the inner tube;

[0012] Gas supply ports are provided in multiple locations along the arrangement direction on the side wall of the inner tube;

[0013] The first exhaust port has multiple outlets arranged along the arrangement direction on the side wall of the inner tube;

[0014] A second exhaust port is provided at one end of the outer pipe along the arrangement direction; and

[0015] A rectifier mechanism controls the flow of gas within the annular space between the inner and outer tubes.

[0016] The rectifier mechanism has fins, and when the first exhaust port, which is farthest from the second exhaust port among a plurality of first exhaust ports, is designated as exhaust port A, and the gas supply port, which is opposite to exhaust port A among a plurality of gas supply ports, is designated as gas supply port A, the fins surround at least a portion of the outer periphery of gas supply port A in the vicinity of gas supply port A.

[0017] The effects of the invention

[0018] According to this disclosure, the quality of substrate processing can be improved when processing a substrate. Attached Figure Description

[0019] Figure 1 This is a schematic structural diagram of a vertical processing furnace of a substrate processing apparatus preferably applicable to one aspect of the present disclosure, showing the furnace portion in a longitudinal sectional view.

[0020] Figure 2 This is a diagram showing the structure of the gas supply system of a vertical processing furnace in a substrate processing apparatus preferably applicable to this disclosure.

[0021] Figure 3 This is a schematic structural diagram of a controller for a substrate processing apparatus preferably applicable in accordance with the present disclosure, and is a block diagram showing the control system of the controller.

[0022] Figure 4 This is a schematic structural diagram of a vertical processing furnace, which is a preferred embodiment of the substrate processing apparatus disclosed herein. Figure 1 The cross-sectional view along line B-B shows a diagram of the main parts of the processing furnace.

[0023] Figure 5 This is a diagram illustrating a structural example of the main components of a substrate processing apparatus according to one aspect of the present disclosure. Figure 5 (a) is from Figure 4 A diagram showing the outer wall of the inner tube 21 viewed from direction C. Figure 5 (b) is from Figure 4 A diagram showing the outer wall of the inner tube 21 viewed from direction D. Figure 5 (c) is from Figure 4 A diagram showing the outer wall of the inner tube 21 viewed from direction E.

[0024] Figure 6 (a) is a diagram showing the flow of exhaust gas from the first exhaust port 41 provided in the inner pipe 21 into the space between the top plate of the inner pipe 21 and the top plate of the outer pipe 22, and moving toward the gas supply port 31 provided in the inner pipe 21. Figure 6 (b) is a diagram showing the flow of exhaust gas from the first exhaust port 41 provided in the inner pipe 21 into the annular space between the inner pipe 21 and the outer pipe 22, and moving toward the gas supply port 31 provided in the inner pipe 21.

[0025] Figure 7 of (a), Figure 7 (b) shows the location where turbulence occurs in the exhaust gas that is discharged from the first exhaust port 41 of the inner pipe 21 into the annular space between the inner pipe 21 and the outer pipe 22 and moves toward the second exhaust port 91 of the outer pipe 22.

[0026] Figure 8 of (a), Figure 8 (b) are diagrams showing structural examples of the main parts of a substrate processing apparatus according to other embodiments of the present disclosure. Detailed Implementation

[0027] <This is a public disclosure method>

[0028] The following is for reference Figures 1-4 , Figure 5 (a)~ Figure 5 (c) describes the manner in which this disclosure is made.

[0029] (1) Structure of the substrate processing device

[0030] The substrate processing apparatus of this method is used in the manufacturing process of semiconductor devices and is configured as a vertical substrate processing apparatus that centrally processes multiple substrates (e.g., 5 to 100) at a time. For example, a semiconductor wafer substrate (hereinafter referred to as "wafer") on which a semiconductor integrated circuit device (semiconductor device) is assembled can be cited as an example.

[0031] like Figure 1 As shown, the substrate processing apparatus of this embodiment includes a vertical processing furnace 1. The vertical processing furnace 1 has a heater 10 that serves as a heating unit (heating mechanism, heating system). The heater 10 is cylindrical in shape and is supported by a heater base (not shown) that serves as a holding plate, thereby being mounted vertically relative to the mounting surface (not shown) of the substrate processing apparatus. The heater 10 also functions as an activation mechanism (excitation unit) that uses heat to activate (excite) gases.

[0032] A reaction tube 20 constituting a reaction vessel (processing vessel) is arranged concentrically with the heater 10 inside the heater 10. The reaction tube 20 has a double tube structure, namely, it has an inner tube 21 as the inner tube and an outer tube 22 concentrically surrounding the inner tube 21 as the outer tube. The inner tube 21 and the outer tube 22 are respectively made of heat-resistant materials such as quartz (SiO2) or silicon carbide (SiC). The inner tube 21 and the outer tube 22 are respectively formed into a cylindrical shape that is closed at the top and open at the bottom.

[0033] A processing chamber 23 for processing wafers W is formed inside the inner tube 21. The processing chamber 23 is configured to house multiple wafers W in a multi-layered state, arranged horizontally along a predetermined arrangement direction (here, vertical direction), using the wafer boat 40 described later. In this specification, the direction in which multiple wafers W are arranged within the processing chamber 23 is also referred to as the arrangement direction. Furthermore, the area within the processing chamber 23 where multiple wafers W are housed horizontally along the arrangement direction is also referred to as the substrate housing area 65.

[0034] A sealing cap 50, serving as a furnace opening cover, is provided below the reaction tube 20, capable of airtightly sealing the lower opening of the reaction tube 20. The sealing cap 50 is made of a metal material such as stainless steel (SUS) and is formed in a disc shape. An O-ring (not shown), serving as a sealing component, is provided on the upper surface of the sealing cap 50, abutting against the lower end of the reaction tube 20. The sealing cap 50 is configured to be raised and lowered vertically using a crystal boat lift (not shown), which serves as a lifting mechanism. The crystal boat lift mechanism is a conveying device (conveyor mechanism), capable of moving (conveying) the crystal boat 40 holding the wafer W into and out of the processing chamber 23 by raising and lowering the sealing cap 50.

[0035] A substrate loading / unloading outlet (not shown) is provided below the sealing cap 50. A transport robot (not shown) moves the wafer W inside and outside the transfer chamber (not shown) via the substrate loading / unloading outlet. Inside the transfer chamber, the wafer W is loaded into the crystal boat 40, and the wafer W is unloaded from the crystal boat 40.

[0036] The crystal boat 40, serving as a substrate support, is configured to support multiple (e.g., 5 to 100) wafers W in a horizontal orientation, aligned with each other at their centers, and arranged in multiple layers along a predetermined arrangement direction (here, vertical direction), i.e., with gaps between them. The crystal boat 40 is made of heat-resistant materials such as quartz or SiC. A heat-insulating section 42, made of heat-resistant materials such as quartz or SiC, is provided at the lower part of the crystal boat 40; this section is configured as a heat-insulating cylinder. The heat-insulating section 42 can also be constructed by horizontally supporting multiple layers of heat-insulating plates, such as those made of heat-resistant materials such as quartz or SiC.

[0037] A plurality of nozzles 30, serving as gas supply sections, are arranged on the reaction tube 20 along the aforementioned arrangement direction (here, vertical direction) to supply gas into the inner tube 21. Furthermore, these nozzles 30 are configured to pass through the heater 10 and the outer tube 22 from the side. Additionally, each nozzle 30 is provided corresponding to a wafer W housed within the substrate housing region 65. Moreover, the nozzles 30 are mounted to spray gas in a direction substantially parallel to the surface of the wafer W housed within the substrate housing region 65.

[0038] Also Figure 5As shown in (a), multiple gas supply ports 31, which guide the gas supplied from the nozzle 30 into the inner tube 21, are provided on the side wall of the inner tube 21 along the aforementioned arrangement direction (here, the vertical direction). Furthermore, each gas supply port 31 is provided corresponding to a wafer W housed within the substrate housing area 65. Additionally, each of the multiple gas supply ports 31 is positioned opposite the front end portion of each of the multiple nozzles 30. Furthermore, in this specification, the gas supply port 31 furthest from the second exhaust port 91 (described later), i.e., the uppermost gas supply port 31 (opposite to the first exhaust port 41a described later), is referred to as gas supply port A (gas supply port 31a). Additionally, a gas supply port 31 different from gas supply port 31a (opposite to the first exhaust port 41b described later) is referred to as gas supply port B (gas supply port 31b). In addition, the gas supply port 31b that is closest to the second exhaust port 91 described later, that is, the gas supply port 31b located at the bottom (the gas supply port 31 opposite to the first exhaust port 41c described later), is also referred to as gas supply port C (gas supply port 31c).

[0039] like Figure 2 As shown, gas supply pipes 51 are connected to nozzles 30. On gas supply pipes 51, starting from the upstream side of the airflow, are sequentially arranged a mass flow controller (MFC) 51a (flow control unit) and a valve 51b (on / off valve). Gas supply pipes 52 and 53 are connected to gas supply pipes 51 downstream of valve 51b. On gas supply pipes 52 and 53, starting from the upstream side of the airflow, are MFCs 52a and 53a and valves 52b and 53b, respectively.

[0040] As a raw material gas, a silane gas, such as silicon (Si), which is the main element constituting the film formed on the wafer W, is supplied from the gas supply pipe 51 into the processing chamber 23 via MFC 51a, valve 51b, and nozzle 30. For example, hexachlorodisilane (Si2Cl6; abbreviated as HCDS) gas can be used as the silane gas.

[0041] As the reaction gas, a nitrogen gas, for example, is supplied from the gas supply pipe 52 into the processing chamber 23 via MFC 52a, valve 52b, gas supply pipe 51, and nozzle 30. Ammonia (NH3) can be used as the nitrogen gas, for example.

[0042] As an inert gas, nitrogen (N2) is supplied to the processing chamber 23 from the gas supply pipe 53 via MFC 53a, valve 53b, gas supply pipe 51, and nozzle 30. The N2 gas functions as a purge gas, dilution gas, or carrier gas.

[0043] like Figure 4 As shown, a first exhaust port 41 is provided on the side wall of the inner tube 21, at a position opposite to the gas supply port 31, where the aforementioned substrate storage area 65 is sandwiched between it. Figure 1 and Figure 5 As shown in (c), multiple first exhaust ports 41 are arranged along the aforementioned arrangement direction (here, the vertical direction). The first exhaust ports 41 are configured to discharge gas supplied from the gas supply port 31 into the inner tube 21. Furthermore, each first exhaust port 41 is arranged corresponding to the gas supply port 31, that is, to the wafer W housed within the substrate housing area 65. In this specification, the first exhaust port 41 furthest from the second exhaust port 91 (described later), i.e., the uppermost first exhaust port 41, is referred to as exhaust port A (first exhaust port 41a). Additionally, an exhaust port 41 different from first exhaust port 41a is referred to as exhaust port B (first exhaust port 41b). Furthermore, the first exhaust port 41b closest to the second exhaust port 91 (described later), i.e., the lowermost first exhaust port 41b, is referred to as exhaust port C (first exhaust port 41c).

[0044] A second exhaust port 91 is provided at one end (the lower end) of the outer tube 22 along the aforementioned arrangement direction (here, the vertical direction). This second exhaust port 91 discharges the gas discharged from the inner tube 21 to the outer tube 22 via multiple first exhaust ports 41, i.e., the exhaust gas flowing in the annular space between the inner tube 21 and the outer tube 22, to the outside of the reaction tube 20. An exhaust pipe 61 is connected to the second exhaust port 91. A vacuum pump 64, which serves as a vacuum exhaust device, is connected to the exhaust pipe 61 via a pressure sensor 62, which detects the pressure inside the reaction tube 20, and an APC (Auto Pressure Controller) valve 63, which serves as a pressure regulator. The APC valve 63 is configured to perform vacuum exhaust and stop vacuum exhaust in the processing chamber 23 by opening and closing the valve while the vacuum pump 64 is operating. Furthermore, the pressure inside the processing chamber 23 can be adjusted by adjusting the valve opening based on the pressure information detected by the pressure sensor 62 while the vacuum pump 64 is operating. Mainly, the exhaust system, or exhaust pipeline, consists of exhaust pipe 61, APC valve 63, and pressure sensor 62.

[0045] A rectifier mechanism R is provided between the inner pipe 21 and the outer pipe 22. It controls the flow of gas in the space between the inner pipe 21 and the outer pipe 22 (hereinafter also referred to as the exhaust buffer space), that is, it controls the flow (exhaust path) of the exhaust gas discharged from multiple first exhaust ports 41 into the exhaust buffer space and toward the second exhaust port 91. The specific structure of the rectifier mechanism R will be described later.

[0046] A temperature sensor 11, serving as a temperature detector, is disposed between the inner tube 21 and the outer tube 22. The energizing state of the heater 10 is adjusted based on the temperature information detected by the temperature sensor 11, thereby achieving the desired temperature distribution within the processing chamber 23. The temperature sensor 11 is configured in an L-shape, for example, disposed along the outer wall of the inner tube 21.

[0047] like Figure 3 As shown, the control unit (control unit), i.e., the controller 70, is composed of a computer, which includes: a CPU (Central Processing Unit) 71, RAM (Random Access Memory) 72, a storage device 73, and an I / O port 74. The RAM 72, storage device 73, and I / O port 74 are configured to exchange data with the CPU 71 via an internal bus 75. An input / output device 82, such as a touch panel, and an external storage device 81 are connected to the controller 70.

[0048] The storage device 73 is composed of, for example, flash memory or an HDD (Hard Disk Drive). The storage device 73 stores, in a readable manner, a control program that controls the operation of the substrate processing apparatus, and a process recipe that describes the steps and conditions of the semiconductor device manufacturing method described later. The process recipe functions as a program and is combined to enable the controller 70 to execute each step in the semiconductor device manufacturing method described later and obtain a predetermined result. Hereinafter, the process recipe, control program, etc., will be simply referred to as a program. Furthermore, the process recipe will be simply referred to as a recipe. In this specification, the term "program" includes: referring only to the recipe unit, referring only to the control program unit, or both. RAM 72 is configured as a storage area (working area) that temporarily holds the program, data, etc., read by the CPU 71.

[0049] I / O port 74 is connected to the aforementioned MFC51a-53a, valves 51b-53b, pressure sensor 62, APC valve 63, vacuum pump 64, heater 10, temperature sensor 11, etc.

[0050] The CPU 71 reads and executes the control program from the storage device 73, and is configured to read the recipe from the storage device 73 according to the operation instructions input from the input / output device 82. The CPU 71 is configured to control the following according to the content of the read recipe: the flow rate adjustment of various gases by MFCs 51a to 53a, the opening and closing of valves 51b to 53b, the opening and closing of APC valve 63 and the pressure adjustment of APC valve 63 based on pressure sensor 62, the start and stop of vacuum pump 64, the temperature adjustment of heater 10 based on temperature sensor 11, and the lifting and lowering of crystal boat 40 by lifting mechanism, etc.

[0051] The controller 70 can be configured by installing the aforementioned program stored in the external storage device 81 onto the computer. The external storage device 81 includes, for example, magnetic disks such as magnetic tape and HDDs, optical disks such as CDs, optical discs such as MO disks, and semiconductor memories such as USB storage devices. Both the storage device 73 and the external storage device 81 are computer-readable storage media. Hereinafter, they will be simply referred to collectively as storage media. In this specification, the term "storage media" includes: referring only to the storage device 73 alone, referring only to the external storage device 81 alone, or referring to both. Furthermore, it is also possible to provide the program to the computer using communication methods such as the Internet or dedicated lines, without using the external storage device 81.

[0052] (2) Substrate processing process

[0053] An example of the timing for forming a film on a wafer W, which serves as a substrate, using the aforementioned substrate processing apparatus as a step in the manufacturing process of a semiconductor device will be described. In the following description, the operation of each component constituting the substrate processing apparatus is controlled by the controller 70.

[0054] In this film formation sequence, the steps 1 (supplying HCDS gas as a raw material gas to the wafer W stored in the processing container (processing chamber 23) and 2 (supplying NH3 gas to the wafer W stored in the processing chamber 23) are performed asynchronously, i.e., the cycle is executed a predetermined number of times (n times, where n is an integer greater than or equal to 1), thereby forming a silicon nitride film (SiN film) on the wafer W.

[0055] In this specification, the film-forming treatment described above is sometimes represented in the following manner for convenience. Furthermore, the same expressions are used in other descriptions below.

[0056]

[0057] (Wafer loading and crystal boat loading)

[0058] When multiple wafers W are loaded into the wafer boat 40 (wafer loading), the wafer boat 40 supporting the multiple wafers W is lifted by the wafer boat elevator and moved into the processing chamber 23 (wafer boat moving). In this state, the sealing cap 50 is in a state where the lower end of the reaction tube 20 is sealed by an O-ring.

[0059] (Pressure / Temperature Adjustment Procedure)

[0060] Vacuum pump 64 is used to perform vacuum degassing (pressure reduction degassing) to bring the pressure (vacuum level) within the processing chamber 23, i.e., the space where the wafer W is located, to the required pressure. At this time, pressure sensor 62 measures the pressure within the reaction tube 20, and based on this measured pressure information, APC valve 63 is controlled to adjust the pressure within the processing chamber 23 to the required level. Vacuum pump 64 remains continuously operating at least until the processing of wafer W is complete. Additionally, heater 10 is used to heat the wafer W within the processing chamber 23 to the required film-forming temperature. At this time, the energizing state of heater 10 is controlled based on temperature information detected by temperature sensor 11 to achieve the required temperature distribution within the processing chamber 23. Heating of the processing chamber 23 by heater 10 continues at least until the processing of wafer W is complete.

[0061] (Film-forming steps)

[0062] Next, proceed with steps 1 and 2 in sequence.

[0063] [Step 1]

[0064] In this step, HCDS gas is supplied to the wafer W inside the processing chamber 23.

[0065] Specifically, valve 51b is opened, allowing HCDS gas to flow into gas supply pipe 51. The HCDS gas flow rate is adjusted by MFC 51a and supplied into processing chamber 23 (inner pipe 21) via nozzle 30 and gas supply port 31. The HCDS gas supplied into inner pipe 21 flows in a direction parallel to the surface of wafer W (horizontal direction) and is discharged out of inner pipe 21 via first exhaust port 41, passing through the space between inner pipe 21 and outer pipe 22 (exhaust buffer space), and is discharged from second exhaust port 91. At this time, HCDS gas is supplied to multiple wafers W respectively. Then, valve 53b is opened, allowing N2 gas to flow into gas supply pipe 53. The N2 gas flow rate is adjusted by MFC 53a and supplied into inner pipe 21 via nozzle 30 and gas supply port 31. N2 gas acts as a carrier gas.

[0066] At this time, the pressure inside the processing chamber 23 is, for example, 0.1 to 30 Torr, preferably 0.2 to 20 Torr, and more preferably 0.3 to 13 Torr. The supply flow rate of HCDS gas is, for example, 0.1 to 10 slm, preferably 0.2 to 2 slm. The supply flow rate of N2 gas is, for example, 0.1 to 20 slm. The supply time of HCDS gas is, for example, 0.1 to 60 seconds, preferably 0.5 to 5 seconds. The temperature of the heater 10 is set to a temperature such that the temperature of the wafer W is, for example, 200 to 900°C, preferably 300 to 850°C, and more preferably 400 to 750°C.

[0067] By supplying HCDS gas to wafer W, a Si-containing layer is formed as the first layer on the outermost surface of each of multiple wafers W.

[0068] After the first layer is formed, valve 51b is closed, stopping the supply of HCDS gas to the inner tube 21. At this time, APC valve 63 remains open, and vacuum pump 64 is used to evacuate the reaction vessel 20, removing any unreacted HCDS gas remaining in the processing chamber 23 or that had played a role in the formation of the first layer. Meanwhile, valve 53b remains open, continuously supplying N2 gas to the processing chamber 23. N2 gas acts as a purging gas, enhancing the removal of residual gas from the processing chamber 23. When purging is complete, valve 53b is closed, stopping the supply of N2 gas to the processing chamber 23.

[0069] [Step 2]

[0070] After step 1 is completed, NH3 gas is supplied to the wafer W in the processing chamber 23.

[0071] Specifically, valve 52b is opened, allowing NH3 gas to flow into gas supply pipe 52. The flow rate of NH3 gas is adjusted by MFC 52a and supplied into processing chamber 23 (inner pipe 21) via gas supply pipe 51, nozzle 30, and gas supply port 31. The NH3 gas supplied into inner pipe 21 flows in a direction parallel to the surface of wafer W (horizontal direction), is discharged out of inner pipe 21 via first exhaust port 41, and is exhausted through exhaust buffer space between inner pipe 21 and outer pipe 22, and then discharged from second exhaust port 91. At this time, NH3 gas is supplied to multiple wafers W respectively. Then, valve 53b is opened, allowing N2 gas to flow into gas supply pipe 53. The flow rate of N2 gas is adjusted by MFC 53a and supplied into inner pipe 21 via nozzle 30 and gas supply port 31. N2 gas acts as a carrier gas.

[0072] At this time, the pressure inside the processing chamber 23 is, for example, in the range of 0.1 to 30 Torr, preferably 0.2 to 20 Torr, and more preferably in the range of 0.3 to 13 Torr. The supply flow rate of HCDS gas is, for example, in the range of 0.1 to 10 slm, preferably in the range of 0.2 to 2 slm. The supply flow rate of N2 gas is, for example, in the range of 0.1 to 20 slm. The supply time of HCDS gas is, for example, in the range of 0.1 to 60 seconds, preferably in the range of 0.5 to 5 seconds. The temperature of the heater 10 is set to a temperature such that the temperature of the wafer W is, for example, in the range of 200 to 900°C, preferably 300 to 850°C, and more preferably in the range of 400 to 750°C.

[0073] The NH3 gas supplied to wafer W reacts with at least a portion of the first layer, i.e., the Si-containing layer, formed on wafer W in step 1. This causes the first layer to be nitrided thermally rather than by plasma, and to be modified into a second layer containing Si and N, i.e., a silicon nitride layer (SiN layer).

[0074] After the second layer (SiN layer) is formed, valve 52b is closed to stop the supply of NH3 gas to the inner tube 21. Furthermore, the residual NH3 gas and reaction byproducts in the processing chamber 23 are removed through the same processing steps as in step 1.

[0075] [Number of scheduled implementations]

[0076] By performing the above steps 1 and 2 asynchronously a predetermined number of times (n times, where n is an integer greater than or equal to 1), a SiN film of a predetermined thickness can be formed on the wafer W. Preferably, the above cycle is repeated multiple times. That is, preferably, the thickness of the second layer formed in each cycle is smaller than the desired film thickness, and the above cycle is repeated multiple times until the film thickness formed by stacking the second layer reaches the desired film thickness.

[0077] (Post-purging steps / Atmospheric pressure recovery steps)

[0078] When the film formation step is completed and a SiN film of the predetermined thickness is formed, N2 gas is supplied to the reaction tube 20 and exhaust from the exhaust pipe 61. This purges the processing chamber 23, removing any residual gas and reaction byproducts (post-purge). Afterward, the atmosphere in the processing chamber 23 is replaced with an inert gas (inert gas replacement), restoring the pressure in the processing chamber 23 to atmospheric pressure (atmospheric pressure restoration).

[0079] (Crystal boat removal and wafer unloading)

[0080] Next, the sealing cap 50 is lowered using a crystal boat lift, opening the lower end of the reaction tube 20, and the processed wafer W is moved out of the reaction tube 20 while supported by the crystal boat 40 (crystal boat removal). After being moved out of the reaction tube 20, the processed wafer W is removed from the crystal boat 40 (wafer unloading).

[0081] (3) Structure of rectifier R

[0082] The following describes the structure of the rectifier mechanism R, which controls the flow (exhaust path) of the exhaust gas in the space between the inner pipe 21 and the outer pipe 22. As mentioned above, the space between the inner pipe 21 and the outer pipe 22 is also referred to as the "exhaust buffer space" in this specification.

[0083] Figure 6 of (a), Figure 6 (b) illustrates the path of the exhaust gas in the exhaust buffer space when the rectifier R is not installed.

[0084] First, such as Figure 6 As shown in (a), the exhaust gas discharged from the first exhaust port 41 sometimes travels through the space between the top plate of the inner pipe 21 and the top plate of the outer pipe 22 (the upper buffer space) in the exhaust buffer space to the gas supply port 31 and then flows into the inner pipe 21 through the gas supply port 31. The path of the exhaust gas at this time is... Figure 6 In (a), this is represented as "exhaust path A". In particular, for the gas discharged from the first exhaust port 41a, which is farther away from the second exhaust port 91, it tends to flow into the upper buffer space and into the gas supply port 31a opposite to the first exhaust port 41a in the vertical direction (up and down direction). The exhaust gas flowing into the inner tube 21 is an important factor leading to a decrease in the substrate processing quality.

[0085] In addition, such as Figure 6 As shown in (b), the exhaust gas discharged from the first exhaust port 41 sometimes travels through the annular space (lateral buffer space) between the side walls of the inner pipe 21 and the outer pipe 22 in the exhaust buffer space, and then flows into the inner pipe 21 through the gas supply port 31. The path of the exhaust gas at this time is... Figure 6 (b) is represented as "exhaust path B". In particular, for the gas discharged from the first exhaust port 41a, which is farther away from the second exhaust port 91, it tends to flow into the side buffer space and into the gas supply port 31a opposite the first exhaust port 41a in the horizontal direction (left-right direction). As described above, the exhaust gas flowing into the inner tube 21 is an important factor leading to a decrease in the substrate processing quality.

[0086] To address these issues, in this approach, such as Figure 5 (a)~ Figure 5 As shown in (c), a rectifier R (including the general term for the rectifier plate group of fins 100 to 400 described later) is provided in the exhaust buffer space to control the flow (flow path) of the exhaust gas in the exhaust buffer space.

[0087] like Figure 5 As shown in (a), the rectifying mechanism R has two fins 100 and two fins 200 near each of the plurality of gas supply ports 31. Specifically, the rectifying mechanism R has fins 100 on both sides in the vertical direction, that is, directly above and directly below the gas supply ports 31, respectively, sandwiching the gas supply ports 31. In addition, the rectifying mechanism R has fins 200 on both sides in the horizontal direction, that is, on the left and right sides of the gas supply ports 31, respectively, sandwiching the gas supply ports 31. Furthermore, the rectifying mechanism R has fins 300 at the ends of the fins 200 that sandwich the gas supply ports 31c from both sides in the horizontal direction, specifically at the lower ends of the fins 200. In addition, the rectifying mechanism R has fins 400 near the first exhaust port 41a, specifically directly above the first exhaust port 41a. In this specification, the fin 100 that sandwiches the gas supply port 31a from both sides in the vertical direction is referred to as the first fin, and the fin 200 that sandwiches the gas supply port 31a from both sides in the horizontal direction is referred to as the second fin. Furthermore, the fin 100 that sandwiches the gas supply port 31b from both sides in the vertical direction is referred to as the third fin, and the fin 200 that sandwiches the gas supply port 31b from both sides in the horizontal direction is referred to as the fourth fin. Additionally, fin 300 is referred to as the fifth fin, and fin 400 is referred to as the sixth fin.

[0088] The structure of the first to sixth fins (fins 100 to 400) of the rectifier mechanism R is described in detail below.

[0089] (First fin, third fin)

[0090] like Figure 4 , Figure 5 As shown in (a), the plurality of fins 100, which are the first fin and the third fin, are respectively arranged to extend horizontally along the outer periphery of the inner tube 21 near the upper and lower sides of the plurality of gas supply ports 31 on the outer wall of the inner tube 21.

[0091] Multiple fins 100 are configured as rectifier plates protruding radially outward from the outer wall of the inner tube 21 toward the inner wall of the outer tube 22. A predetermined distance is maintained between the ends of the radially outward-facing fins 100 of the inner tube 21 and the inner wall of the outer tube 22, for example, a gap greater than 2 mm and less than 7 mm. Each of the multiple fins 100 also includes a fin 100 directly above the gas supply port 31a, and is configured to be parallel to the main surface of the horizontally housed wafer W.

[0092] like Figure 5 As shown in (a), multiple fins 100 are configured to be horizontally straight (flat) in side view and are set to a predetermined length (extension length) larger than the horizontal inner diameter of the gas supply port 31. All multiple fins 100 are set to the same extension length. The fins 100 are configured to sandwich the gas supply port 31 from both sides along the vertical direction (arrangement direction). The fin 100 directly above the gas supply port 31a is located at a predetermined distance below the upper end (top plate) of the inner tube 21.

[0093] (Second fin, fourth fin)

[0094] In addition, such as Figure 5 As shown in (a), the multiple fins 200, which are the second fin and the fourth fin, are respectively arranged to extend along the vertical direction (arrangement direction) near the left and right sides of the multiple gas supply ports 31 on the outer wall of the inner tube 21.

[0095] Also Figure 4 As shown, multiple fins 200 are configured, similarly to fins 100, as flow straighteners protruding radially outward from the outer wall of the inner tube 21 toward the inner wall of the outer tube 22. Similar to fins 100, a predetermined distance is maintained between the ends of the radially outward-facing fins 200 on the inner tube 21 and the inner wall of the outer tube 22, for example, a gap greater than 2 mm and less than 7 mm.

[0096] like Figure 5 As shown in (a), multiple fins 200 are configured to be vertically oriented (flat) in side view, and are set to a predetermined length (extension length) larger than the vertical inner diameter of the gas supply port 31. The fins 200 are configured to clamp the gas supply port 31 from both sides along the horizontal direction. A flat plate is formed by multiple fins 200 arranged on the left side of the gas supply port 31. Similarly, a flat plate is formed by multiple fins 200 arranged on the right side of the gas supply port 31. Figure 5 As shown in (b), the sides of these plates (the outer sides in the horizontal direction) are formed as a continuous, smooth surface without steps or gaps.

[0097] like Figure 5As shown in (a), the horizontal end of the fin 100 engages with the fins 200 arranged on both sides in the horizontal direction. Thus, the outer periphery of the plurality of gas supply ports 31 is surrounded by the fins 100 and fins 200 without gaps (continuously).

[0098] (Fifth wing)

[0099] like Figure 5 As shown in (a), the two fins 300, which are the fifth fins, are respectively configured to extend along the vertical direction (arrangement direction), i.e., toward the second exhaust port 91, on the side of the gas supply port 31 on the outer wall of the inner tube 21, i.e., below the gas supply port 31c. The two fins 300 extend downward from the lower ends of the two fins 200, and the two fins 200 sandwich the gas supply port 31c from both sides in the horizontal direction. The lower ends of the two fins 300 are respectively located, for example, near the lower end of the heater 10, above the lower end of the heater 10 (see reference). Figure 1 ).

[0100] The two fins 300 are configured, in the same manner as fins 100, as flow straighteners protruding radially outward from the outer wall of the inner tube 21 toward the inner wall of the outer tube 22. Similar to fins 100, they are configured to maintain a predetermined distance, for example, a gap greater than 2 mm and less than 7 mm, between the radially outward-facing end of the fin 300 on the inner tube 21 and the inner wall of the outer tube 22.

[0101] like Figure 5 As shown in (a), the two fins 300 are respectively configured to have a vertically aligned shape (flat plate) in side view. A flat plate is formed by multiple fins 200 and 300 arranged on the left side of the gas supply port 31. A flat plate is formed by multiple fins 200 and 300 arranged on the right side of the gas supply port 31. Figure 5 As shown in (b), the sides of these plates (the outer sides in the horizontal direction) are formed as a continuous, smooth surface without steps or gaps.

[0102] (Sixth wing)

[0103] like Figure 5 (b) Figure 5 As shown in (c), the sixth fin 400 is configured to extend horizontally along the outer periphery of the inner tube 21 near the upper end of the outer wall of the inner tube 21 on the side of the first exhaust port 41, i.e., above the first exhaust port 41a. The fin 400 is configured to have a horizontal straight line shape (flat plate) in side view and is set to a predetermined length (extension length) larger than the horizontal inner diameter of the first exhaust port 41a. The fin 400 is located at a predetermined distance below the upper end (top plate) of the inner tube 21.

[0104] Fin 400, like fin 100, is configured as a flow straightener protruding radially outward from the outer wall of the inner tube 21 toward the inner wall of the outer tube 22. Similar to fin 100, it is configured to maintain a predetermined distance, for example, a gap greater than 2 mm and less than 7 mm, between the radially outward-facing end of the fin 400 in the inner tube 21 and the inner wall of the outer tube 22.

[0105] (4) The effect of this method

[0106] According to this method, one or more of the following effects can be obtained.

[0107] (a) The rectifier R of this method has fins surrounding at least a portion of the outer periphery of the gas supply port 31a near the gas supply port 31a. This prevents exhaust gas flowing within the exhaust buffer space from entering the inner tube 21 through the gas supply port 31a. As a result, the quality of substrate processing can be improved, especially the quality of substrate processing for wafers W disposed on the upper side of the substrate housing region 65.

[0108] (b) The rectifier R of this method has fins 100 (first fins) extending horizontally in the vicinity of the gas supply port 31a with a predetermined length larger than the horizontal inner diameter of the gas supply port 31a. The fins 100 are configured to sandwich the gas supply port 31a from both sides along the arrangement direction (vertical direction). As a result, it is possible to suppress the flow of exhaust gas flowing in the exhaust buffer space into the gas supply port 31a. As a result, the quality of substrate processing can be improved, especially the quality of substrate processing for wafers W arranged on the upper side of the substrate storage area 65.

[0109] (c) The rectifier R of this method has fins 200 (second fins) extending along the arrangement direction (vertical direction) with a predetermined length larger than the inner diameter of the gas supply port 31a in the arrangement direction (vertical direction) near the gas supply port 31a. The fins 200 are configured to sandwich the gas supply port 31a from both sides in the horizontal direction. As a result, the flow of exhaust gas flowing in the exhaust buffer space into the gas supply port 31a can be suppressed. As a result, the quality of substrate processing can be improved, especially the quality of substrate processing for wafers W arranged on the upper side of the substrate storage area 65.

[0110] (d) The rectifier R of this method has a fin 100 (third fin) extending horizontally in the vicinity of the gas supply port 31b with a predetermined length larger than the horizontal inner diameter of the gas supply port 31b. The fin 100 is configured to sandwich the gas supply port 31b from both sides along the arrangement direction (vertical direction). As a result, the flow of exhaust gas flowing in the exhaust buffer space into the gas supply port 31b can be suppressed. As a result, even for wafers W stored in a position other than the upper side of the substrate storage area 65, the quality of substrate processing can be improved.

[0111] (e) The rectifier R of this method has a fin 200 (fourth fin) extending vertically near the gas supply port 31b with a predetermined length larger than the inner diameter of the gas supply port 31b in the vertical direction. The fin 200 is configured to sandwich the gas supply port 31b from both sides in the horizontal direction. As a result, the flow of exhaust gas flowing in the exhaust buffer space into the gas supply port 31b can be suppressed. As a result, even for wafers W stored in a position other than the upper side of the substrate storage area 65, the quality of substrate processing can be improved.

[0112] (f) The rectifier R of this method includes a fin 300 (fifth fin) extending for a predetermined length along the arrangement direction (vertical direction) from the end of the fin 200 disposed near the gas supply port 31c. As a result, the quality of substrate processing can be improved, especially the quality of substrate processing for wafers W disposed on the lower side of the substrate storage area 65.

[0113] Without fin 300, it is possible that, for example Figure 7 The area indicated by the dashed line in (a), i.e., the periphery of the gas supply port 31c, experiences turbulence in the exhaust gas. Due to this turbulence, a small amount of exhaust gas flows into the gas supply port 31c. While the aforementioned effect can be sufficiently achieved, within the range where this effect can be obtained, it may affect the quality of substrate processing, especially the processing quality of the wafer W disposed on the lower side of the substrate housing region 65.

[0114] To address this issue, by setting fin 300, it is possible to achieve... Figure 7 As shown by the dashed line in (b), the location where turbulence of the exhaust gas is generated is moved away from the gas supply port 31c. As a result, the flow of exhaust gas into the gas supply port 31c can be suppressed, and the quality of substrate processing can be improved, especially the quality of substrate processing for wafers W disposed on the lower side of the substrate storage area 65.

[0115] (g) In the rectifier R of this method, a single plate is formed by multiple fins 200 and 300 disposed on the left side of the gas supply port 31. Additionally, a single plate is formed by multiple fins 200 and 300 disposed on the right side of the gas supply port 31. Furthermore, the sides (outer horizontal sides) of these plates are formed as continuous, smooth surfaces without steps or gaps. This suppresses turbulence within the exhaust buffer space, improving the quality of the substrate processing.

[0116] (h) The rectifying mechanism R of this method has a fin 400 (sixth fin) extending horizontally in the vicinity of the first exhaust port 41a with a predetermined length larger than the horizontal inner diameter of the first exhaust port 41a. This prevents exhaust gas discharged from the plurality of first exhaust ports 41, especially from the first exhaust port 41a, from flowing into the upper buffer space. Consequently, it prevents exhaust gas from flowing into the gas supply port 31a via the upper buffer space. As a result, the quality of substrate processing for the wafer W, especially for substrate processing of the wafer W disposed on the upper side of the substrate housing region 65, can be improved.

[0117] <Other methods of this disclosure>

[0118] The above provides a detailed description of one method of this disclosure, but this disclosure is not limited to the above method and various changes can be made without departing from its essence.

[0119] Furthermore, while the above description illustrates a scenario where fins 100 (first or third fins) are positioned on the upper and lower sides of the gas supply port 31, and fins 200 (second or fourth fins) are positioned on the left and right sides of the gas supply port 31, this disclosure is not limited to this. For example, fins 100 may be positioned only on either the upper or lower side of the gas supply port 31, or fins 200 may be positioned only on either the left or right side of the gas supply port 31. In this case, at least some of the effects described above can still be obtained.

[0120] Furthermore, while the above description illustrates a case where the fifth fin 300 extends from the lower ends of two fins 200 flanking the gas supply port 31c on either side in the horizontal direction, i.e., two fins 300 are provided, this disclosure is not limited to this. For example, the fin 300 may extend from the lower end of either of the two fins 200 flanking the gas supply port 31c on either side in the horizontal direction, and only one fin 300 may be provided. In this case, at least some of the effects described in the above description can also be obtained.

[0121] Furthermore, while the above description assumes all fins 100 to 400 are installed, this disclosure is not limited to this. For example, only the fin 100 directly above the gas supply port 31a may be installed, omitting the installation of other fins. In this case, at least some of the effects described above can still be obtained.

[0122] Furthermore, while the above description illustrates the case where the gas supply ports 31 are individually surrounded by fins 100 and 200, this disclosure is not limited to this. For example, several (e.g., 2 to 5) gas supply ports 31 can be configured as a single enclosure unit, and this unit (several gas supply ports 31) can be surrounded by fins 100 and 200. In this case, the same effect as described above can be obtained.

[0123] Furthermore, while the above description illustrates the case where all fins 100 have the same extension length, this disclosure is not limited to this. For example, the fin 100 positioned directly above the gas supply port 31a may have the longest extension length, gradually decreasing in length as the fin 100 moves downwards. In this case, the same effect as described above can be achieved. However, the above-described method, where all fins 100 have the same extension length, is preferred because it can suppress the flow of gas discharged from the first exhaust port 41 into the exhaust buffer space into the gas supply port 31.

[0124] Furthermore, the above description illustrates a case where the first and second fins (fins 100 and 200) are each configured as flat plates, forming a single flat plate composed of multiple fins 200 disposed on the left side of the gas supply port 31, and a single flat plate composed of multiple fins 200 disposed on the right side of the gas supply port 31. However, this disclosure is not limited to this. For example, the fins 100 and 200 could be bent to form continuous curved surfaces and thus become a single unit. Figure 8 As shown in (a), when the inner tube is viewed from the side of the gas supply port, the outer periphery of each of the multiple gas supply ports is surrounded by curved fins in a circular or elliptical shape. In this case, the same effect as described above can be achieved. However, the method described above, where the inner tube is surrounded by straight fins 100 and 200 without gaps, is preferred because it can suppress turbulence generated within the exhaust buffer space.

[0125] Furthermore, for example, the above description illustrates an example where the gap between the ends of the radially outward-facing fins 100 of the inner tube 21 and the inner wall of the outer tube 22 is maintained at the same distance for multiple fins 100 and 200, but this disclosure is not limited to this structure. For example, the size of the fins 100 (the amount of protrusion from the outer wall of the inner tube 21) can be set such that the gap between the fins 100 positioned directly above the gas supply port 31a is narrowest. Additionally, the size of the fins 200 (the amount of protrusion from the outer wall of the inner tube 21) can be set such that the gap between the fins 200 positioned to the left and right of the gas supply port 31a is narrowest. This more effectively prevents exhaust gas flowing within the exhaust buffer space from flowing into the gas supply port 31a.

[0126] Furthermore, while the above description illustrates a case where multiple fins 100, including the fin 100 directly above the gas supply port 31a, are arranged parallel to the main surface of the horizontally housed wafer W, this disclosure is not limited to this. For example, the fins 100 directly above the gas supply port 31a may be arranged in an inclined position, such that their ends rise or fall radially outward toward the inner tube 21. The same configuration can be applied to other fins 100. In this case, at least some of the effects described above can be obtained.

[0127] Furthermore, while the above description uses an inner tube 21 with a closed upper end as an example, this disclosure is not limited to this. For example, an inner tube 21 with an open upper end, i.e., an inner tube 21 without a top plate at the upper end, can also be used. In this case, at least some of the effects described above can be obtained by providing the various fins described above. In addition, when the upper end of the inner tube 21 is open, exhaust gas discharged from at least one of the plurality of first exhaust ports 41 and flowing into the upper buffer space can easily flow into the inner tube 21 from the open portion at the upper end. To address this problem, it is particularly meaningful to provide a fin 400 as a sixth fin, because it can prevent exhaust gas discharged from at least one of the plurality of first exhaust ports 41 from flowing around into the upper buffer space.

[0128] Furthermore, while the above description illustrates the case where the fin 100 directly above the gas supply port 31a is positioned below the upper end of the inner tube 21, this disclosure is not limited to this. For example, the fin 100 directly above the gas supply port 31a can be positioned at the same height as the upper end of the inner tube 21. In this case, at least some of the effects described above can be obtained. Moreover, when the fin 100 directly above the gas supply port 31a is positioned at the same height as the upper end of the inner tube 21, a flat surface without steps can be formed between the upper end of the inner tube 21 and the fin 100. This suppresses turbulence around the upper end of the inner tube 21. As a result, it suppresses the intrusion of exhaust gas into the inner tube 21 via the gas supply port 31a, and the intrusion of exhaust gas into the inner tube 21 when the upper end of the inner tube 21 is open.

[0129] Furthermore, while the above description illustrates the case where the sixth fin, located directly above the first gas exhaust port 41a, is positioned below the upper end of the inner tube 21, this disclosure is not limited to this. For example, it can be positioned at the same height as the upper end of the inner tube 21. In this case, at least some of the effects described above can be obtained. Moreover, when the fin 400 directly above the first gas exhaust port 41a is positioned at the same height as the upper end of the inner tube 21, a flat surface without steps can be formed between the upper end of the inner tube 21 and the fin 400. This suppresses turbulence around the upper end of the inner tube 21. As a result, gas discharge through the first gas exhaust port 41a can proceed stably. Additionally, when the upper end of the inner tube 21 is open, the intrusion of discharged gas into the inner tube 21 due to turbulence can be suppressed.

[0130] Additionally, for example, in the above method, for the tip of nozzle 30 such as Figure 1 The description shows a configuration where the nozzle 30 is positioned outside the inner tube 21, and gas is supplied into the inner tube 21 from the outside. However, this disclosure is not limited to this configuration. For example, the tip of the nozzle 30 can be positioned inside the inner tube 21, and gas can be supplied into the inner tube 21 from the inside. In this case, the same effect as described above can be obtained. Furthermore, this can prevent exhaust gas from being drawn into the inner tube 21 due to the gas supplied from the nozzle 30.

[0131] Furthermore, the example described above illustrates an example where the fifth fin 300 extends vertically downwards from the lower end of the second fin 200 located at the lowermost side; however, this disclosure is not limited to this. For example, either or both of the two fifth fins may be inclined at a predetermined angle relative to the vertical direction from the lower end of the second fin located at the lowermost side. That is, the extension direction of either or both of the two fifth fins may include not only a vertical component but also a horizontal component. This achieves the same effect as the method described above.

[0132] Alternatively, for example, it can also be like Figure 8 As shown in (b), when the two fifth fins extend downward in the vertical direction from the lower end of the second fin located on the lowermost side, one or both of them are tilted at a predetermined angle relative to the vertical direction and converge at the downstream end. This achieves the same effect as described above. Furthermore, this reduces the turbulence generation point from two locations to one, thereby further reducing the possibility of exhaust gas flowing into the gas supply port. As a result, the quality of substrate processing can be improved, especially the processing quality of wafers disposed on the lower side of the substrate housing area.

[0133] Furthermore, the example described above illustrates an example where multiple first exhaust ports 41 are respectively positioned opposite the substrate-holding area 65 and the gas supply port 31 on the side wall of the inner tube 21; however, this disclosure is not limited to this. For example, the first exhaust ports 41 may be positioned at a predetermined distance circumferentially offset from the position opposite the substrate-holding area 65 and the gas supply port 31 on the side wall of the inner tube 21. The same effect as described above can be achieved in this case.

[0134] Furthermore, the above description illustrates an example where the gas supply port 31 and the first exhaust port 41 are respectively arranged for each of the multiple wafers 200 housed within the substrate housing region 65; however, this disclosure is not limited thereto. For example, at least one of the gas supply port 31 and the first exhaust port 41 may be arranged in multiple locations (e.g., spaced 2 to 5 times apart) relative to the multiple wafers 200 housed within the substrate housing region 65. In this case, the same effect as described above can also be obtained.

[0135] Furthermore, while the example of forming a SiN film on wafer W has been described above, this disclosure is not limited to this. For example, this disclosure also applies to the formation of silicon films (Si films), silicon oxide films (SiO films), silicon oxynitride films (SiON films), etc., on wafer W. Additionally, this disclosure also applies to the formation of metallic thin films such as titanium films (Ti films), titanium oxide films (TiO films), titanium nitride films (TiN films), aluminum films (Al films), aluminum oxide films (AlO films), and hafnium oxide films (HfO films) on wafer W. The same effects as described above can be obtained in these cases.

[0136] This disclosure is not limited to the process of forming films on multiple wafers W separately, but can also be applied when etching, annealing, or plasma-modifying multiple wafers W separately. The same effect as described above can be obtained in these cases.

[0137] Symbol Explanation

[0138] 21—Inner Tube; 22—Outer Tube; 31, 31a, 31b, 31c—Gas Supply Ports; 41, 41a, 41b, 41c—First Exhaust Ports; 65—Substrate Storage Area; 91—Second Exhaust Port; W—Wafer (Substrate); 100—Fin (First Fin, Third Fin); 200—Fin (Second Fin, Fourth Fin); 300—Fin (Fifth Fin); 400—Fin (Sixth Fin); R—Rectifying Mechanism.

Claims

1. A substrate processing apparatus, characterized in that, have: The inner tube has a substrate storage area inside, which stores multiple substrates arranged in a horizontal orientation along a predetermined arrangement direction in multiple layers. An outer tube, which is disposed outside the inner tube; Gas supply ports are provided in multiple locations along the arrangement direction on the side wall of the inner tube; The first exhaust port has multiple outlets arranged along the arrangement direction on the side wall of the inner tube; The second exhaust port is disposed at one end of the outer tube along the arrangement direction and is located at a position opposite to the first exhaust port, which is sandwiched between the substrate storage area. A rectifier mechanism that controls the flow of exhaust gas within the annular space between the inner and outer pipes; and Multiple nozzles extend through the outer tube, with their front ends positioned within the annular space, maintaining a predetermined distance from each of the multiple gas supply ports and facing each other in an opposing manner. The rectifier has fins that surround the outer periphery of each of the gas supply ports in the vicinity of the gas supply ports and protrude radially outward from the outer wall of the inner tube, and maintain a gap between the fins at the end and the inner wall of the outer tube.

2. The substrate processing apparatus according to claim 1, characterized in that, The fin includes a first fin that extends horizontally with a predetermined length larger than the horizontal inner diameter of each of the gas supply ports, and is configured to prevent exhaust gas flowing within the annular space from flowing into the inner tube through the gas supply ports.

3. The substrate processing apparatus according to claim 2, characterized in that, It also includes multiple nozzles that extend through the outer tube from the side, and each nozzle has the same number as the corresponding gas supply port, with its front end facing the gas supply port, and sprays gas onto the substrate. The first fins are respectively disposed near the gas supply port from both sides of the arrangement direction.

4. The substrate processing apparatus according to claim 2, characterized in that, The fin includes a second fin that extends in the vicinity of the gas supply port along the arrangement direction of the gas supply port.

5. The substrate processing apparatus according to claim 4, characterized in that, The second fins are respectively disposed near the gas supply port from both sides in the horizontal direction. When the first exhaust port, which is furthest from the second exhaust port among the plurality of first exhaust ports, is designated as exhaust port A, and the gas supply port, which is opposite to exhaust port A among the plurality of gas supply ports, is designated as gas supply port A, the protrusion amount of the first fin is set such that the gap between the first fin located directly above the gas supply port A and the outer tube is the narrowest, or the protrusion amount of the second fin is set such that the gap between the second fin located to the left and right of the gas supply port A and the outer tube is the narrowest.

6. The substrate processing apparatus according to claim 4, characterized in that, The rectifier mechanism also has a fifth fin. When the first exhaust port closest to the second exhaust port among the plurality of first exhaust ports is designated as exhaust port C, and the gas supply port opposite to the exhaust port C among the plurality of gas supply ports is designated as gas supply port C, the fifth fin extends from the end of the second fin located near the gas supply port C along the arrangement direction or toward the second exhaust port for a predetermined length.

7. The substrate processing apparatus according to claim 6, characterized in that, A gap is provided between the end of the fifth fin and the end of the side wall of the inner tube.

8. The substrate processing apparatus according to claim 6, characterized in that, The fifth fin extends downward at a predetermined angle relative to the vertical direction from the lower ends of the two second fins. The ends of the fifth fins on the second exhaust port side are in contact with each other.

9. The substrate processing apparatus according to claim 1, characterized in that, When the first exhaust port, which is furthest from the second exhaust port among a plurality of first exhaust ports, is designated as exhaust port A, and the gas supply port, which is opposite to exhaust port A among a plurality of gas supply ports, is designated as gas supply port A, the rectifier mechanism has a sixth fin that extends horizontally in the vicinity of exhaust port A between exhaust port A and gas supply port A, with a predetermined length larger than the horizontal inner diameter of exhaust port A.

10. The substrate processing apparatus according to claim 1, characterized in that, The first exhaust port is located at a position opposite to the gas supply port, which is sandwiched between the substrate storage area and the gas supply port.

11. The substrate processing apparatus according to claim 1, characterized in that, The rectifier is configured to suppress the flow of exhaust gas that is discharged into the annular space via each of the first exhaust ports and flows toward the second exhaust port and the plurality of gas supply ports.

12. The substrate processing apparatus according to claim 9, characterized in that, The sixth fin prevents the exhaust gas discharged through the first exhaust port from flowing in the upper buffer space between the top plate of the inner tube and the top plate of the outer tube, and prevents the exhaust gas from flowing into the gas supply port through the upper buffer space.

13. The substrate processing apparatus according to claim 1, characterized in that, The protrusion of the fin is greater than the distance between the gas supply port and the front end of the corresponding nozzle.

14. A substrate processing method, characterized in that, have: The process of arranging multiple substrates horizontally along a predetermined arrangement direction into multiple layers and storing them in a substrate storage area inside an inner tube. The process involves supplying gas supplied by multiple nozzles into the inner tube from multiple gas supply ports arranged along the arrangement direction on the side wall of the inner tube. The multiple nozzles extend through an outer tube arranged outside the inner tube, and their front ends are arranged in an annular space between the inner tube and the outer tube, maintaining a predetermined distance from the multiple gas supply ports and facing each other in an opposing manner. The process of discharging gas supplied into the inner tube from multiple first exhaust ports arranged along the arrangement direction on the side wall of the inner tube into the outer tube; The process of venting air from a second exhaust port located at one end of the outer tube along the arrangement direction and positioned opposite the first exhaust port while sandwiching the substrate storage area; as well as A process for controlling the flow of exhaust gas within the annular space using a rectifier mechanism having fins that surround the outer periphery of each of the gas supply ports near the plurality of gas supply ports and protrude radially outward from the outer wall of the inner tube, and maintain a gap between the fins at the ends and the inner wall of the outer tube.

15. A method for manufacturing a semiconductor device, characterized in that, have: The process of arranging multiple substrates horizontally along a predetermined arrangement direction into multiple layers and storing them in a substrate storage area inside an inner tube. The process involves supplying gas supplied by multiple nozzles into the inner tube from multiple gas supply ports arranged along the arrangement direction on the side wall of the inner tube. The multiple nozzles extend through an outer tube arranged outside the inner tube, and their front ends are arranged in an annular space between the inner tube and the outer tube, maintaining a predetermined distance from the multiple gas supply ports and facing each other in an opposing manner. The process of discharging gas supplied into the inner tube from multiple first exhaust ports arranged along the arrangement direction on the side wall of the inner tube into the outer tube; The process of venting air from a second exhaust port located at one end of the outer tube along the arrangement direction and positioned opposite the first exhaust port while sandwiching the substrate storage area; as well as A process for controlling the flow of exhaust gas within the annular space using a rectifier mechanism having fins that surround the outer periphery of each of the gas supply ports near the plurality of gas supply ports and protrude radially outward from the outer wall of the inner tube, and maintain a gap between the fins at the ends and the inner wall of the outer tube.

16. A storage medium, a computer-readable storage medium, characterized in that, It stores a program that causes the computer to perform the following steps: The step of arranging multiple substrates horizontally along a predetermined arrangement direction into multiple layers and storing them in a substrate storage area inside an inner tube. The step of supplying gas supplied by multiple nozzles into the inner tube from multiple gas supply ports arranged along the arrangement direction on the side wall of the inner tube, wherein the multiple nozzles extend through an outer tube arranged outside the inner tube and the front end is arranged in an annular space between the inner tube and the outer tube, and maintains a predetermined distance from the multiple gas supply ports and faces each other in an opposing manner. The step of discharging gas supplied into the inner tube from multiple first exhaust ports arranged along the arrangement direction on the side wall of the inner tube into the outer tube; The step of venting air from a second exhaust port located at one end of the outer tube along the arrangement direction and positioned opposite the first exhaust port, which sandwiches the substrate storage area, into the inner tube and the annular space. as well as The step of controlling the flow of gas within the annular space using a rectifier mechanism having fins surrounding the outer periphery of each of the gas supply ports in the vicinity of the plurality of gas supply ports.

17. An inner tube having an internal substrate storage area for storing multiple substrates arranged in a horizontal orientation along a predetermined arrangement direction in multiple layers, and disposed within an outer tube having a second vent at one end along the arrangement direction. The inner tube is characterized in that, Multiple gas supply ports are provided on the side wall of the inner tube along the arrangement direction. On the side wall of the inner tube, along the arrangement direction, a plurality of first exhaust ports are provided at positions opposite to the second exhaust port, sandwiching the substrate storage area. The outer tube is provided with multiple nozzles extending through it. The front ends of these nozzles are positioned within an annular space between the inner and outer tubes, maintaining a predetermined distance from each of the gas supply ports and facing each other in an opposing manner. Near the gas supply port on the side wall of the inner tube, fins constituting at least a portion of the rectification mechanism are configured to surround the outer periphery of each gas supply port and protrude radially outward from the outer wall of the inner tube, and maintain a gap at the end between the fins and the inner wall of the outer tube. This rectification mechanism controls the flow of gas within the annular space.

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