Display device

Abstract

An electronic device includes a substrate having a normal direction; a first metal line and a second metal line disposed on the substrate; a first contact pad and a second contact pad disposed on the substrate, wherein in the normal direction, the first contact pad overlaps an end of the first metal line, and the second contact pad overlaps an end of the second metal line; and an electronic device disposed on the first contact pad and the second contact pad, wherein the electronic device is electrically connected to the first metal line and the second metal line through the first contact pad and the second contact pad.

Description

[0001] This invention is a divisional application of the invention with application number 201910146574.2, application date February 27, 2019, and invention title "Display Device". Technical Field

[0002] This invention relates to display devices, and more particularly to the interconnection of electronic components in display devices. Background Technology

[0003] Smartphones, tablets, laptops, monitors, and televisions—electronic devices with display panels—have become indispensable necessities in modern society. With the booming development of these portable electronic products, consumers have higher expectations for their quality, functionality, and price. The development of next-generation display devices focuses on energy-saving and environmentally friendly technologies.

[0004] Micro LED technology is an emerging flat panel display technology. Micro LED display devices drive arrays of addressed micro LEDs. Micro LED displays can produce seamless images with wide viewing angles, high brightness, and high contrast. However, due to the small size of micro LEDs, integration and packaging issues are among the main obstacles to the commercialization of such products.

[0005] In current manufacturing methods, micro-LEDs are typically formed and divided into multiple micro-LED dies (e.g., micro-light-emitting dies) on a chip substrate, and then transferred to another target substrate. For example, driving circuitry and related circuitry are formed on the target substrate to provide an array substrate (e.g., a TFT array substrate), and then the micro-LED dies are mounted on the array substrate. Due to the small size of the micro-LED dies, transferring them to the target substrate is a labor-intensive process. Furthermore, the electrical connection between the micro-LEDs (including the integrated electronic components forming these dies) and the target substrate is also a concern.

[0006] Therefore, developing structures and methods that can effectively maintain or improve the efficiency of transferring small electronic components (e.g., micro LEDs) or improve their electrical interconnection with the target substrate is one of the current research topics in the industry. Summary of the Invention

[0007] According to some embodiments, the present invention provides an electronic device, comprising: a substrate having a normal direction; a first metal line and a second metal line disposed on the substrate; a first pad and a second pad disposed on the substrate, wherein, in the normal direction, the first pad overlaps with one end of the first metal line, and the second pad overlaps with one end of the second metal line; and an electronic device disposed on the first pad and the second pad, wherein the electronic device is electrically connected to the first metal line and the second metal line through the first pad and the second pad. Attached Figure Description

[0008] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings, wherein: Figure 1 A cross-sectional schematic diagram of a display device is shown according to some embodiments of the present invention; Figures 2A-2D This is illustrated in some embodiments of the present invention. Figure 1 A cross-sectional schematic diagram of the metal wires and pads in region M; Figure 2E and Figure 2F This is illustrated in some embodiments of the present invention. Figure 1 A top view of the metal wires and pads in region M; Figures 3-7 A cross-sectional schematic diagram of a display device is shown according to some embodiments of the present invention; Figures 8A-8E This is illustrated in some embodiments of the present invention. Figure 1 A cross-sectional schematic diagram of region M; Figure 9 A cross-sectional schematic diagram of a display device is shown according to some embodiments of the present invention; Figure 10 A cross-sectional schematic diagram of a display device is shown according to some embodiments of the present invention; Figures 11A-11C This diagram illustrates the steps of transferring an electronic device to a target substrate according to some embodiments of the present invention.

[0009] Symbol Explanation

[0010] Display devices with capacities of 10, 20, 30, 40, 50, 60, 70, and 80. 100, 100', 100'' First substrate; 102a First metal wire; 102b Second metal wire; 102e terminal; 102f outer layer; 102g inner layer; 102s sidewall; 104a First pad; 104b Second pad; 104p raised portion; 104s sidewall; 200, 200', 200'' Electronic devices; 200A Integrated Electronic Components; 200b Bottom side; 202 Semiconductor die; 204a First electrode; 204b Second electrode; 206 First dielectric layer; 206b Bottom surface; 208 conductive layer; 210a First connecting post; 210a' First layer; 210a'' Second layer; 210b Second connecting post; 210b' First layer; 210b'' Second layer; 212 Second dielectric layer; 214 Adhesive layer; 214p Raised portion; 300 Second substrate; 302a Third metal wire; 302b Fourth metal wire; 304a Third gasket; 304b fourth gasket; 310a Third connecting post; 310b Fourth connecting post; 314 Adhesive layer; 400 Integrated Circuits; Line segment B-B'; Distance between D1 and D2; Heights of H1, H2, H3, H3'', H4, and H5; H3' Total height; Region M; Thicknesses of T1, T2, T3, T4, T5, T6, T7, and T8; W1 and W2 widths. Detailed Implementation

[0011] The following provides a detailed description of the structure of the display device and its manufacturing method according to the present invention. It should be understood that the following description provides many different embodiments to implement different variations of some embodiments of the present invention. The specific components and arrangements described below are merely for simple and clear description of some embodiments of the present invention. Of course, these are merely examples and not limitations of the present invention. Furthermore, similar and / or corresponding reference numerals may be used in different embodiments to identify similar and / or corresponding components to clearly describe the present invention. However, the use of these similar and / or corresponding reference numerals is only for simple and clear description of some embodiments of the present invention and does not represent any connection between the different embodiments and / or structures discussed. Moreover, when describing a "first material layer" disposed on or above a "second material layer," it includes the case where the first material layer and the second material layer are in direct contact. Alternatively, there may be a case where one or more other material layers are spaced apart, in which case the first material layer and the second material layer may not be in direct contact.

[0012] It should be understood that the components or devices in the accompanying drawings may exist in various forms well known to those skilled in the art. Furthermore, relative terms such as "lower," "bottom," "higher," or "top" may be used in the embodiments to describe the relative relationship of one component of the drawings to another. It is understood that if the devices in the drawings are flipped upside down, the component described as being on the "lower" side will become the component on the "higher" side.

[0013] It should be understood that although terms such as "first," "second," "third," etc., may be used herein to describe various components, parts, regions, layers, portions, and / or sections, these components, parts, regions, layers, portions, or sections should not be limited by these terms. These terms are only used to distinguish different components, parts, regions, layers, portions, or sections. Therefore, a first component, part, region, layer, portion, or section discussed below may be referred to as a second component, part, region, layer, portion, or section without departing from the teachings of the invention.

[0014] The embodiments of the present invention can be used in conjunction with the appendix Figure 1 It should be understood that the accompanying drawings of this invention are also considered part of the disclosure. It should be understood that the drawings of this invention are not drawn to scale; in fact, the dimensions of components may be arbitrarily enlarged or reduced to clearly illustrate the features of the invention, and similar components will be represented by similar symbols in the specification and drawings.

[0015] Here, the terms "about," "approximately," and "substantially" generally indicate within 20% of a given value or range, preferably within 10%, more preferably within 5%, or within 3%, or within 2%, or within 1%, or within 0.5%. The quantities given here are approximate quantities, meaning that the meanings of "about," "approximately," and "substantially" may be implied even without specific mention of them.

[0016] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It is understood that these terms, for example, as defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the background or context of the relevant art and this invention, and should not be interpreted in an idealized or overly formal manner, unless specifically defined in the embodiments of this invention.

[0017] Furthermore, in some embodiments of the present invention, terms such as "connection" and "interconnection," unless specifically defined, may refer to two structures being in direct contact, or they may refer to two structures not being in direct contact, wherein another structure is disposed between the two structures. Moreover, these terms regarding joining and connecting may also include cases where both structures are movable or both structures are fixed.

[0018] According to some embodiments of the present invention, a structure is provided for improving the electrical connection efficiency between small electronic devices (e.g., sub-millimeter LEDs, micro LEDs, organic LEDs, inorganic LEDs (e.g., quantum dot LEDs), or integrated electronic components) and larger target substrates (e.g., array substrates). The display device provided by the present invention includes connecting posts that can be securely embedded in conductive components (e.g., interconnection pads) on the target substrate. Therefore, effective electrical connection between the electronic device and the circuitry on the target substrate can be maintained. Furthermore, according to some embodiments of the present invention, the arrangement of an intermediate substrate in the display device can reduce the time required to transfer small electronic devices to the target substrate.

[0019] Figure 1 The diagram shows a cross-sectional view of a display device 10 according to some embodiments of the present invention. It should be understood that, according to some embodiments, additional features may be added to the display device. According to some embodiments, some of the features described below may be replaced or deleted.

[0020] Please refer to Figure 1The display device 10 includes a first substrate 100 and an electronic device 200 disposed on the first substrate 100. The first substrate 100 may be an intermediate substrate or a target substrate (e.g., an array substrate) of the display device 10. In some embodiments, the first substrate 100 may comprise glass, quartz, sapphire, polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), rubber, glass fiber, other polymeric materials, other suitable substrate materials, or combinations thereof, but is not limited thereto. In some embodiments, the first substrate 100 may be made of a metal-glass fiber composite board, a metal-ceramic composite board, or a printed circuit board, etc.

[0021] The display device 10 also includes a first metal line 102a and a second metal line 102b disposed on a first substrate 100. The first metal line 102a and the second metal line 102b can be any conductive material on the first substrate 100. For example, the first metal line 102a and the second metal line 102b can each be a conductive material for a circuit on an array substrate. In some embodiments, the first metal line 102a and the second metal line 102b can be data lines or scan lines on the array substrate. The first metal line 102a and the second metal line 102b are in the normal direction of the first substrate 100 (e.g., as shown in the image). Figure 1 The first metal wire 102a (shown in the X direction) has thicknesses T1 and T2, respectively. In some embodiments, the thickness T1 of the first metal wire 102a may be in the range of about 0.1 μm to about 1 μm, or about 0.2 μm to about 0.6 μm. In some embodiments, the thickness T2 of the second metal wire 102b may be in the range of about 0.1 μm to about 1 μm, or about 0.2 μm to about 0.6 μm. The thickness T1 of the first metal wire 102a may be the same as or different from the thickness T2 of the second metal wire 102b.

[0022] In some embodiments, the first metal wire 102a and the second metal wire 102b may each be formed of the same or different conductive materials. The materials used to form the first metal wire 102a and the second metal wire 102b may include copper, aluminum, tungsten, titanium, gold, silver, molybdenum, copper alloys, aluminum alloys, tungsten alloys, titanium alloys, gold alloys, silver alloys, molybdenum alloys, other suitable conductive materials, or combinations thereof, but are not limited thereto. In some embodiments, the first metal wire 102a and the second metal wire 102b may each be formed of a conductive material having a high melting temperature. In some embodiments, the first metal wire 102a and the second metal wire 102b may each be formed of a conductive material with a melting temperature in the range of about 660°C to about 3410°C.

[0023] Furthermore, in some embodiments, the first metal line 102a and / or the second metal line 102b may comprise a multilayer structure. For example, Figure 2A This is illustrated in some embodiments of the present invention. Figure 1 A cross-sectional schematic diagram of the second metal line 102b and the second pad 104b in region M. (See diagram below.) Figure 2A As shown, according to some embodiments, the second metal line 102b may be at least a double-layer structure. Specifically, the second metal line 102b may be a coaxial double-layer structure comprising an inner layer 102g and an outer layer 102f. In some specific embodiments, the inner layer 102g may be formed of aluminum, and the outer layer 102f may be formed of molybdenum. Furthermore, it should be understood that... Figures 2A-2F The description only uses the second metal wire 102b and the second pad 104b as examples. The first metal wire 102a and the first pad 104a, which are not shown, may also have the same or similar features.

[0024] Next, please refer to again. Figure 1 The display device 10 also includes a first pad 104a and a second pad 104b disposed on a first substrate 100. The first pad 104a and the second pad 104b are electrically connected to a first metal line 102a and a second metal line 102b, respectively. In other words, the first pad 104a provides an electrical connection between the electronic device 200 and the first metal line 102a on the first substrate 100. The second pad 104b provides an electrical connection between the electronic device 200 and the second metal line 102b on the first substrate 100. Figure 1 As shown, the first pad 104a and the second pad 104b at least partially overlap with the first metal wire 102a and the second metal wire 102b, respectively, so that a good electrical connection can be maintained between the first pad 104a and the first metal wire 102a, and between the second pad 104b and the second metal wire 102b. Specifically, the overlap between the first pad 104a and the first metal wire 102a, and between the second pad 104b and the second metal wire 102b, can respectively facilitate the transmission of electrical signals in the first metal wire 102a and the second metal wire 102b or reduce the possibility of leakage.

[0025] Figures 2B-2D The configuration of the second metal wire 102b and the second pad 104b according to some embodiments of the present invention will be described in detail. Figures 2B-2D This is illustrated in some embodiments of the present invention. Figure 1 A cross-sectional view of the second metal wire 102b and the second pad 104b in region M. It should be understood that components other than the metal wire and the pad are omitted in the figure for clarity.

[0026] like Figure 2BAs shown, according to some embodiments, a portion of the second pad 104b overlaps with the second metal wire 102b. More specifically, the second pad 104b may cover a portion of the sidewalls and top surface of the second metal wire 102b. Figure 2C and Figure 2D As shown, in some embodiments, the entire second pad 104b is disposed on the second metal wire 102b. According to some embodiments, the sidewalls 104s of the second pad 104b may be aligned with the sidewalls 102s of the second metal wire 102b (e.g., ...). Figure 2C (As shown). According to some embodiments, the second metal wire 102b may further extend toward the center of the electronic device 200, and the sidewall 102s of the second metal wire 102b may protrude beyond the sidewall 104s of the second pad 104b (e.g.). Figure 2D (As shown).

[0027] on the other hand, Figure 2E and Figure 2F This is illustrated in some embodiments of the present invention. Figure 1 A top view of the second metal line 102b and the second pad 104b in region M. Furthermore, along... Figure 2E The cross-sectional view of line segment B-B' in the diagram can correspond to Figure 2B and Figure 2C The cross-sectional view shown. Along Figure 2F The cross-sectional view of line segment B-B' in the diagram can correspond to Figure 2D The cross-sectional view shown is for reference only. Figure 2B , 2C In some embodiments, the second pad 104b may completely overlap with the end 102e of the second metal wire 102b, that is, the second pad 104b may completely cover the end 102e of the second metal wire 102b. Please refer to 2E. Figure 2D and Figure 2F In some embodiments, the second pad 104b may partially overlap with the end 102e of the second metal wire 102b, that is, the second pad 104b may partially cover the end 102e of the second metal wire 102b. According to some embodiments of the present invention, the "end 102e of the second metal wire 102b" refers to the portion extending inward from the sidewall 102s of the second metal wire 102b along the Y direction within a range of approximately 100 μm.

[0028] Next, please refer to again. Figure 1The first pad 104a and the second pad 104b may have thicknesses T3 and T4, respectively, in the normal direction (i.e., the X direction) of the first substrate 100. In some embodiments, the thickness T3 of the first pad 104a may be in the range of about 0.2 μm to about 50 μm, or about 5 μm to about 15 μm. In some embodiments, the thickness T4 of the second pad 104b may be in the range of about 0.2 μm to about 50 μm, or about 5 μm to about 15 μm. The thickness T3 of the first pad 104a may be the same as or different from the thickness T4 of the second pad 104b. In some embodiments, the thickness T3 of the first pad 104a is greater than the thickness T1 of the first metal line 102a. In some embodiments, the thickness T4 of the second pad 104b is greater than the thickness T2 of the second metal line 102b.

[0029] In some embodiments, the first pad 104a and the second pad 104b may each be formed of a conductive material. The conductive material used to form the first pad 104a and the second pad 104b may include solder, tin, indium, gallium, tin alloys, indium alloys, gallium alloys, gallium-indium alloys, or combinations thereof, but is not limited thereto. In some embodiments, the first pad 104a and the second pad 104b may each be formed of a conductive material having a lower melting temperature. Specifically, the first pad 104a and the second pad 104b may each be formed of a conductive material having a lower melting temperature compared to the melting temperatures of the first metal line 102a and the second metal line 102b. In some embodiments, the first pad 104a and the second pad 104b may each be formed of a conductive material having a melting temperature in the range of about 100°C to about 400°C.

[0030] In some embodiments, chemical vapor deposition (CVD), physical vapor deposition (PVD), electroplating, electroless electroplating, other suitable processes, or combinations thereof may be used to form the first metal line 102a, the second metal line 102b, the first pad 104a, and the second pad 104b. The CVD process may include, for example, low-pressure chemical vapor deposition (LPCVD), low-temperature chemical vapor deposition (LTCVD), rapid thermal chemical vapor deposition (RTCVD), plasma-enhanced chemical vapor deposition (PECVD), or atomic layer deposition (ALD). The PVD process may include, for example, sputtering, vapor deposition, or pulsed laser deposition (PLD).

[0031] Please continue to refer to Figure 1 The electronic device 200 includes a semiconductor die 202, a first electrode 204a, a second electrode 204b, a first dielectric layer 206, a conductive layer 208, a first connecting post 210a, a second connecting post 210b, and a second dielectric layer 212. The electronic device 200 may include an integrated circuit. For example, the electronic device 200 may include digital circuits, LEDs, photodiodes, transistors, or other suitable electronic devices, but is not limited thereto. In some embodiments, the electronic device 200 may be a miniature LED. It should be understood that, although... Figure 1 Only one electronic device 200 is shown, but in reality, more than one electronic device 200 may be provided on the first substrate 100.

[0032] like Figure 1As shown, electronic device 200 is disposed on first pad 104a and second pad 104b. The semiconductor die 202 of electronic device 200 may comprise multiple layers formed of different materials. In some embodiments, semiconductor die 202 may comprise a semiconductor layer or a quantum well layer, but is not limited thereto. In some embodiments, the semiconductor layer may be formed of a III-V compound. III-V compounds may comprise gallium nitride (GaN), indium nitride (InN), aluminum nitride (AlN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), aluminum gallium indium nitride (AlGaInN), or combinations thereof, but are not limited thereto. In some embodiments, the quantum well layer may be made of indium gallium nitride, gallium nitride, or combinations thereof, but is not limited thereto.

[0033] According to some embodiments, the semiconductor die 202 may be an organic microLED die. According to some embodiments, the semiconductor die 202 may be an inorganic microLED die. In some embodiments, the cross-sectional area of ​​the semiconductor die 202 in the YZ plane may have a length (in the Y direction) ranging from about 1 μm to about 175 μm, and may have a width (in the Z direction) ranging from about 1 μm to about 175 μm. In some embodiments, the dimensions of the semiconductor die 202 may be from about 1 μm × 1 μm × 1 μm to about 175 μm × 175 μm × 175 μm. In some embodiments, the semiconductor die 202 may be formed using an epitaxial growth process. For example, the semiconductor die 202 can be formed using metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), liquid phase epitaxy (LPE), or a combination thereof.

[0034] The first electrode 204a and the second electrode 204b may be disposed on the semiconductor die 202. In some embodiments where the electronic device 200 is a micro LED, the first electrode 204a and the second electrode 204b may serve as the n-electrode and p-electrode of the micro LED, respectively. In some embodiments, the first electrode 204a and the second electrode 204b may be formed of a metallic conductive material. The metallic conductive material may include copper, aluminum, tungsten, titanium, gold, silver, molybdenum, platinum, nickel, copper alloys, aluminum alloys, tungsten alloys, titanium alloys, gold alloys, silver alloys, molybdenum alloys, platinum alloys, nickel alloys, other suitable metallic conductive materials, or combinations thereof, but is not limited thereto. In some embodiments, the first electrode 204a and the second electrode 204b may be formed of a transparent conductive material (TCO). For example, the transparent conductive material may include indium tin oxide (ITO), tin oxide (SnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), antimony tin oxide (ATO), antimony zinc oxide (AZO), other suitable transparent conductive materials, or combinations thereof, but is not limited thereto. It should be noted that, compared to the conductive layer 208 of the electronic device 200, the first electrode 204a and the second electrode 204b may be formed of a material with a higher melting temperature. In some embodiments, the first electrode 204a and the second electrode 204b may be formed using chemical vapor deposition, physical vapor deposition, electroplating, electroless plating, other suitable processes, or combinations thereof.

[0035] Please continue to refer to Figure 1 A first dielectric layer 206 is disposed on the semiconductor die 202. In some embodiments, the first dielectric layer 206 may cover a portion of the first electrode 204a and a portion of the second electrode 204b. In other words, the first dielectric layer 206 may partially expose the first electrode 204a and the second electrode 204b, such that the first electrode 204a and the second electrode 204b can be electrically connected to the conductive layer 208. In some embodiments, the first dielectric layer 206 may comprise silicon oxide, silicon nitride, silicon oxynitride, a high-k dielectric material, other suitable dielectric materials, or combinations thereof, but is not limited thereto. The high-k dielectric material may comprise metal oxides, metal nitrides, metal silicides, transition metal oxides, transition metal nitrides, transition metal silicides, metal oxynitrides, metal aluminates, zirconium silicates, or zirconium aluminates, but is not limited thereto. In some embodiments, the first dielectric layer 206 may be formed by a chemical vapor deposition process, a spin coating process, other suitable processes, or a combination thereof.

[0036] Furthermore, the electronic device 200 includes a conductive layer 208 disposed above the first dielectric layer 206. As mentioned above, the conductive layer 208 is in contact with a portion of the first electrode 204a and the second electrode 204b. The conductive layer 208 is electrically connected to the first electrode 204a and the second electrode 204b, respectively. Furthermore, as... Figure 1 As shown, the conductive layer 208 includes a first connecting post 210a and a second connecting post 210b. The first connecting post 210a and the second connecting post 210b are each defined as a portion substantially located below the bottom side 200b of the electronic device 200. In some embodiments, the first connecting post 210a and the second connecting post 210b may protrude from the bottom surface 206b of the first dielectric layer 206. In some embodiments, the first connecting post 210a and the second connecting post 210b may also protrude from the bottom surface 202b of the semiconductor die 202. In other words, the first connecting post 210a and the second connecting post 210b extend toward the first substrate 100. The first connecting post 210a and the second connecting post 210b extend toward the first pad 104a and the second pad 104b, respectively. Furthermore, at least a portion of the first connecting post 210a is embedded in the first pad 104a, and at least a portion of the second connecting post 210b is embedded in the second pad 104b. Therefore, the first connecting post 210a is electrically connected to the first pad 104a, and the second connecting post 210b is electrically connected to the second pad 104b. It should be understood that, although... Figure 1 The illustrated embodiment has two connecting posts, but in other embodiments the number of connecting posts can be adjusted as needed.

[0037] like Figure 1 As shown, the first connecting post 210a and the second connecting post 210b are separated by a distance D1. In some embodiments, the distance D1 between the first connecting post 210a and the second connecting post 210b is in the range of about 1 μm to about 200 μm, or about 2 μm to about 50 μm. In some embodiments, the distance D1 between the first connecting post 210a and the second connecting post 210b is defined as the distance between any position of the first connecting post 210a and any position of the second connecting post 210b. In other embodiments, the distance D1 between the first connecting post 210a and the second connecting post 210b is defined as the distance between the lowest point of the first connecting post 210a in the normal direction (X direction) of the first substrate 100 and the lowest point of the first connecting post 210a in the normal direction of the first substrate 100.

[0038] Furthermore, the first connecting post 210a and the second connecting post 210b have heights H1 and H2, respectively, in the normal direction (e.g., the X direction) of the first substrate 100. In some embodiments, the height H1 of the first connecting post 210a may be in the range of about 0.05 μm to about 10 μm, or in the range of about 1 μm to about 5 μm. In some embodiments, the height H2 of the second connecting post 210b may be in the range of about 0.05 μm to about 10 μm, or in the range of about 1 μm to about 5 μm.

[0039] In some embodiments, the first connecting post 210a, the second connecting post 210b, and the conductive layer 208 are integrally formed. The first connecting post 210a, the second connecting post 210b, and the conductive layer 208 may be a continuous structure. In other embodiments, the first connecting post 210a, the second connecting post 210b, and the conductive layer 208 are formed separately. The first connecting post 210a, the second connecting post 210b, and the conductive layer 208 may be independent components. Furthermore, the first connecting post 210a and the conductive layer 208 may be formed of the same or different materials. Similarly, the second connecting post 210b and the conductive layer 208 may be formed of the same or different materials.

[0040] In some embodiments, the first connecting post 210a and the second connecting post 210b may each be formed of a conductive material. The materials used to form the first connecting post 210a and the second connecting post 210b may include copper, aluminum, tungsten, titanium, gold, silver, molybdenum, copper alloys, aluminum alloys, tungsten alloys, titanium alloys, gold alloys, silver alloys, molybdenum alloys, other suitable conductive materials, or combinations thereof, but are not limited thereto. In some embodiments, the first connecting post 210a and the second connecting post 210b may each be formed of a conductive material having a high melting temperature. In some embodiments, the first connecting post 210a and the second connecting post 210b may each be formed of a conductive material having a melting temperature in the range of about 660°C to about 3410°C.

[0041] A second dielectric layer 212 is formed on the conductive layer 208, and the second dielectric layer 212 also covers the first connecting post 210a and the second connecting post 210b. In some embodiments, the second dielectric layer 212 may comprise silicon oxide, silicon nitride, silicon oxynitride, a high-k dielectric material, other suitable dielectric materials, or combinations thereof, but is not limited thereto. High-k dielectric materials may comprise metal oxides, metal nitrides, metal silicides, transition metal oxides, transition metal nitrides, transition metal silicides, metal oxynitrides, metal aluminates, zirconium silicates, or zirconium aluminates, but are not limited thereto. In some embodiments, the second dielectric layer 212 may be formed by chemical vapor deposition, spin coating, other suitable processes, or combinations thereof.

[0042] Furthermore, the display device 10 also includes an adhesive layer 214 disposed between the electronic device 200 and the first substrate 100. The adhesive layer 214 bonds the electronic device 200 to the first substrate 100 and maintains physical contact between the first connecting post 210a and the second connecting post 210b and the first pad 104a and the second pad 104b on the first substrate 100, respectively. The adhesive layer 214 may be formed of an adhesive material. In some embodiments, the adhesive layer 214 may be an insulator. In some embodiments, the material of the adhesive layer 214 may include a thermosetting adhesive, a photocurable adhesive, or a combination thereof, but is not limited thereto. The photocurable adhesive may include a UV-curable adhesive or a visible-light-curable adhesive.

[0043] In some embodiments, the adhesive layer 214 may be formed using coating, spraying, inkjet printing, other suitable methods, or combinations thereof. Figure 1 As shown, according to some embodiments, the adhesive layer 214 may have a droplet shape.

[0044] It should be noted that in some embodiments, the first substrate 100 and the components formed thereon are heated before the electronic device 200 is fixed to the first substrate 100. Specifically, the first pad 104a and the second pad 104b are heated to a melted state, allowing the first connecting post 210a and the second connecting post 210b to be embedded in the first pad 104a and the second pad 104b, respectively. In some embodiments, the melting temperatures of the first connecting post 210a and the second connecting post 210b are higher than the melting temperatures of the first pad 104a and the second pad 104b, respectively. In this case, the temperature of the heating step can be adjusted within a range where the pads are substantially melted but the connecting posts are not melted. In other embodiments, the hardness of the connecting post is greater than the hardness of the pad, allowing the connecting post to be embedded in the pad.

[0045] Furthermore, since the first metal wire 102a and the second metal wire 102b disposed on the first substrate 100 are also heated during the heating process, according to some embodiments, the melting temperatures of the first metal wire 102a and the second metal wire 102b are respectively higher than the melting temperatures of the first pad 104a and the second pad 104b. Specifically, in some embodiments, the ratio of the melting temperature of the metal wire to the melting temperature of the pad is in the range of about 1.5 to about 35, or about 1.5 to about 17. It should be noted that the ratio of the melting temperature of the metal wire to the melting temperature of the pad should not be too small, otherwise the metal wire may melt or deform during heating, resulting in the risk of damage to the metal wire. In addition, the ratio of the melting temperature of the metal wire to the melting temperature of the pad should not be too large, otherwise the difference between the coefficient of thermal expansion of the metal wire and the coefficient of thermal expansion of the pad may be too large, causing the metal wire and the pad to peel off from each other.

[0046] As described above, the first pad 104a and the second pad 104b may be formed of a conductive material having a lower melting temperature compared to the materials of the first metal wire 102a and the second metal wire 102b, respectively. The conductive material with a lower melting temperature used to form the first pad 104a and the second pad 104b may include solder, tin, indium, gallium, tin alloys, indium alloys, gallium alloys, gallium-indium alloys, or combinations thereof, but is not limited thereto. The first connecting post 210a and the second connecting post 210b may be formed of a conductive material having a higher melting temperature compared to the materials of the first pad 104a and the second pad 104b, respectively. The conductive material with a higher melting temperature used to form the first connecting post 210a and the second connecting post 210b may include copper, aluminum, tungsten, titanium, gold, silver, molybdenum, copper alloys, aluminum alloys, tungsten alloys, titanium alloys, gold alloys, silver alloys, molybdenum alloys, other suitable conductive materials, or combinations thereof, but is not limited thereto. Furthermore, the first metal wire 102a and the second metal wire 102b may also be formed of conductive materials having a higher melting temperature compared to the materials of the first pad 104a and the second pad 104b. The conductive materials with higher melting temperatures used to form the first metal wire 102a and the second metal wire 102b may include copper, aluminum, tungsten, titanium, gold, silver, molybdenum, copper alloys, aluminum alloys, tungsten alloys, titanium alloys, gold alloys, silver alloys, molybdenum alloys, other suitable conductive materials, or combinations thereof, but are not limited thereto.

[0047] The melting temperatures of the aforementioned materials are listed in the table below:

[0048] Next, please refer to Figure 3 , Figure 3 The diagram shows a cross-sectional view of the display device 20 according to some embodiments of the present invention. It should be understood that components or components that are the same or similar to those described above will be indicated by the same or similar reference numerals in the following text, and their materials, manufacturing methods and functions are the same or similar to those described above, so this part will not be repeated in the following text. Figure 3 The display device 20 shown is Figure 1 The difference between the display devices 10 shown is that the display device 20 has a first connecting post 210a and a second connecting post 210b with different profiles. For example... Figure 3As shown, the display device 20 has a bell-shaped first connecting post 210a and a bell-shaped second connecting post 210b. In this embodiment, the first connecting post 210a and the second connecting post 210b have blunt ends. Compared to connecting posts with pointed ends, connecting posts with blunt ends can further reduce the accumulation of static electricity and improve the electrical connection efficiency between the connecting post and the pad. This is because connecting posts with blunt ends are less likely to cause corona discharge that damages the pad, and the surface of the pad is less prone to oxidation. In this case, the electrical connection efficiency between the connecting post and the pad can be further improved. In fact, the first connecting post 210a and the second connecting post 210b can have any other suitable shape, as long as the first connecting post 210a and the second connecting post 210b protrude from the bottom side 200b of the electronic device 200 and can be embedded in the first pad 104a and the second pad 104b. For example, the first connecting post 210a and the second connecting post 210b may have a conical shape or a column shape, but are not limited thereto.

[0049] Next, please refer to Figure 4 , Figure 4 The diagram shows a cross-sectional view of the display device 30 according to some embodiments of the present invention. Figure 4 The display device 30 shown is Figure 1 The difference between the display devices 10 shown is that, Figure 4 In the illustrated embodiment, the materials of the first connecting post 210a and the second connecting post 210b are different from the material of the conductive layer 208. In some embodiments, the connecting posts (first connecting post 210a and second connecting post 210b) and the conductive layer 208 may be formed separately. As described above, the first connecting post 210a and the second connecting post 210b may be formed of conductive materials having a higher melting temperature compared to the materials of the first pad 104a and the second pad 104b. Furthermore, the first connecting post 210a and the second connecting post 210b may be formed of conductive materials having a lower melting temperature compared to the material of the conductive layer 208, so that the conductive layer 208 is not affected by the high temperature during heating. Therefore, the function of the conductive layer 208 (e.g., conductivity) can be maintained without affecting the performance of the electronic device.

[0050] Next, please refer to Figure 5 , Figure 5 The diagram shows a cross-sectional view of the display device 40 according to some embodiments of the present invention. Figure 5 The display device 40 shown is Figure 4 The difference between the display devices 30 shown is that, Figure 5 In the illustrated embodiment, the first connecting post 210a and the second connecting post 210b have a multi-layered structure. For example... Figure 5As shown, the first connecting post 210a includes a first layer 210a' and a second layer 210a'', and the second connecting post 210b includes a first layer 210b' and a second layer 210b''. Specifically, in some embodiments, the first layer 210a' of the first connecting post 210a and the first layer 210b' of the second connecting post 210b may be formed of the same material as the conductive layer 208. In other words, the first layer 210a' and the first layer 210b' may be formed of a conductive material having a relatively high melting temperature. In some embodiments, the second layer 210a'' of the first connecting post 210a and the second layer 210b'' of the second connecting post 210b may be formed of a conductive material having a lower melting temperature compared to the materials of the first layer 210a' and the first layer 210b'. Furthermore, the second layer 210a'' and the second layer 210b'' may be formed of a conductive material having a higher melting temperature compared to the first pad 104a and the second pad 104b, respectively.

[0051] Next, please refer to Figure 6 , Figure 6 The diagram shows a cross-sectional view of the display device 50 according to some embodiments of the present invention. Figure 6 The display device 50 shown is Figure 1 The difference between the display devices 10 shown is that, Figure 6 In the illustrated embodiment, the adhesive layer 214 fills the space between the electronic device 200 and the first substrate 100. Specifically, the adhesive layer 214 substantially fills the space defined by the semiconductor die 202, the first dielectric layer 206, the first connecting post 210a, the second connecting post 210b, the first pad 104a, the second pad 104b, and the first substrate 100. In this embodiment, the adhesive layer 214 is in physical contact with the first pad 104a and the second pad 104b. In some embodiments, the adhesive layer 214 is also in physical contact with the first connecting post 210a and the second connecting post 210b.

[0052] Next, please refer to Figure 7 , Figure 7 The diagram shows a cross-sectional view of a display device 60 according to some embodiments of the present invention. Figure 7 The display device 60 shown is Figure 6 The difference between the display devices 50 shown is that, Figure 7 In the illustrated embodiment, the adhesive layer 214 further extends onto the first pad 104a and the second pad 104b, beyond the first connecting post 210a and the second connecting post 210b. For example... Figure 7 As shown, the adhesive layer 214 substantially covers the entire first pad 104a and the second pad 104b. In some embodiments, the edges of the adhesive layer 214 may be substantially aligned with the edges of the first pad 104a and / or the second pad 104b.

[0053] Next, please refer to Figures 8A to 8E , Figures 8A-8E This is illustrated in some embodiments of the present invention. Figure 1 A cross-sectional schematic diagram of region M. It should be understood that some components have been omitted from the drawing for clarity. Furthermore, it should be understood that... Figures 8A to 8E The description uses only the second connecting post 210b and the second pad 104b as examples; the first connecting post 210a and the first pad 104a (not shown) may also have the same or similar features. As described above, at least a portion of the first connecting post 210a and the second connecting post 210b is embedded in the first pad 104a and the second pad 104b, respectively. Therefore, a portion of the pad will be compressed, forming a bulging portion around the location where the connecting post is embedded in the pad. Figure 8A As shown, in some embodiments, the second pad 104b includes a protrusion 104p surrounding the second connecting post 210b embedded in the second pad 104b. In other words, the protrusion 104p surrounds a portion of the second connecting post 210b embedded in the second pad 104b. Figure 8B As shown, in some embodiments, the adhesive layer 214 fills the space between the electronic device 200 and the first substrate 100 (e.g., as shown in some embodiments). Figure 6 As shown), the pad includes a raised portion 104p, and the adhesive layer 214 also includes a swelling portion 214p surrounding the connecting post embedded in the pad; that is, the pad includes a raised portion 214p surrounding the connecting post embedded in the pad. Figure 8C As shown, in some embodiments where the adhesive layer 214 fills the space between the electronic device 200 and the first substrate 100 (e.g., as shown in...), Figure 6 As shown), the adhesive layer 214 includes a raised portion 214p surrounding the second connecting post 210b, while the second pad 104b is not compressed. Furthermore, as... Figure 8D As shown, in some other embodiments where the adhesive layer 214 substantially covers the entire second pad 104b (e.g., as shown in other embodiments), Figure 7 As shown), the second pad 104b includes a raised portion 104p, and the adhesive layer 214 also includes a raised portion 214p surrounding the second connecting post 210b embedded in the second pad 104b. Figure 8E As shown, in some other embodiments where the adhesive layer 214 substantially covers the entire second pad 104b (e.g., as shown in other embodiments), Figure 7 As shown), the adhesive layer 214 includes a raised portion 214p surrounding the second connecting post 210b, while the second pad 104b is not compressed.

[0054] In some embodiments, the protrusion 104p of the second pad 104b has a height H3 (e.g., Figure 8A (As shown). The height H3 can be defined as the distance between the highest point and the lowest point of the protrusion 104p in the normal direction (X direction) of the first substrate 100. In some embodiments, the height H3 of the protrusion 104p can be in the range of about 0.1 μm to about 5 μm, or about 1 μm to about 3 μm. In some embodiments where the second pad 104b and the adhesive layer 214 include the protrusion 104p and the raised portion 214p, the protrusion 104p and the raised portion 214p have a total height H3' (e.g., ...). Figure 8D (As shown). The total height H3' can be defined as the distance between the highest point of the raised portion 214p and the lowest point of the protrusion 104p in the normal direction (X direction) of the first substrate 100. In some embodiments, the total height H3' of the protrusion 104p and the raised portion 214p can be in the range of about 0.1 μm to about 5 μm, or about 1 μm to about 3 μm. Furthermore, in some embodiments where the adhesive layer 214 includes the raised portion 214p, the raised portion 214p of the adhesive layer 214 has a height H3'' (e.g., Figure 8E (As shown). The height H3'' can be defined as the distance between the highest point and the lowest point of the raised portion 214p in the normal direction (X direction) of the first substrate 100. In some embodiments, the height H3'' of the raised portion 214p can be in the range of about 0.1 μm to about 5 μm, or about 1 μm to about 3 μm.

[0055] In some embodiments, the portion of the second connecting post 210b embedded in the second pad 104b has a height H4 (e.g., ...). Figure 8A (As shown). In some embodiments, the portion of the second connecting post 210b embedded in the second pad 104b and the adhesive layer 214 have a height H4 (as shown). Figure 8D As shown). In some embodiments, the portion of the second connecting post 210b embedded in the adhesive layer 214 has a height H4 (as shown). Figure 8EAs shown above, the second connecting post 210b has a height H2 in the normal direction (X direction) of the first substrate 100. In some embodiments, the ratio of the height H4 of the portion of the second connecting post 210b embedded in the second pad 104b and / or adhesive layer 214 to the height H2 of the second connecting post 210b is in the range of 0.1 to 1 (i.e., 0.1 ≤ H4 / H2 ≤ 1). In some embodiments, the portion of the first connecting post 210a embedded in the adhesive layer 214 has a height H5 (not shown). Similarly, in some embodiments, the ratio of the height H5 of the portion of the first connecting post 210a embedded in the first pad 104a and / or adhesive layer 214 to the height H1 of the first connecting post 210a is in the range of 0.1 to 1 (i.e., 0.1 ≤ H5 / H1 ≤ 1).

[0056] Next, please refer to Figure 9 , Figure 9 The diagram shows a cross-sectional view of the display device 70 according to some embodiments of the present invention. Figure 9 The display device 70 shown is Figure 1 The difference between the display devices 10 shown is that, Figure 9 In the illustrated embodiment, the electronic device 200 is disposed in a flip-chip type. In this embodiment, the conductive layer 208 can be directly used as a connecting post embedded in the pads 104a / 104b. The electronic device 200 can be electrically connected to the pads 104a / 104b via a portion of the conductive layer 208 embedded in the pads.

[0057] Next, please refer to Figure 10 , Figure 10 The diagram shows a cross-sectional view of a display device 80 according to some embodiments of the present invention. The display device 80 includes an integrated electronic component 200A and a second substrate 300 disposed below the integrated electronic component 200A. Figure 1The display device 10 described herein is substantially the same. Specifically, the integrated electronic component 200A includes a first substrate 100, a first metal line 102a and a second metal line 102b disposed on the first substrate 100, and a first pad 104a and a second pad 104b disposed on the first substrate 100. The first pad 104a and the second pad 104b are electrically connected to the first metal line 102a and the second metal line 102b, respectively. The integrated electronic component 200A also includes an electronic device 200 disposed on the first pad 104a and the second pad 104b. The electronic device 200 includes a first connecting post 210a and a second connecting post 210b, with a portion of the first connecting post 210a embedded in the first pad 104a and a portion of the second connecting post 210b embedded in the second pad 104b. The materials, manufacturing methods, and functions of these components are the same as or similar to those described above, and therefore will not be repeated here.

[0058] In some embodiments, the second substrate 300 may serve as a target substrate (e.g., an array substrate) of the display device 80. The first substrate 100 may serve as an intermediate substrate, which may carry components formed thereon to the target substrate (e.g., the second substrate 300). In some embodiments, a plurality of electronic devices 200 are disposed on the first substrate 100. As described above, the electronic device 200 may include digital circuits, LEDs, photodiodes, transistors, or other suitable electronic devices, but is not limited thereto. In some embodiments, the electronic device 200 may be a miniature LED. In some embodiments, the electronic device 200 further includes at least one integrated circuit 400 disposed on the first substrate 100. In other embodiments, the electronic device 200 includes a plurality of integrated circuits, other electronic components or other optoelectronic components, and conductive lines that interconnect the plurality of electronic components to form a circuit on the first substrate 100. The first substrate 100 may carry an integrated electronic component 200A on which a plurality of components are formed, and dispose of it on the second substrate 300, thereby reducing the time required for component transfer.

[0059] In some embodiments, the second substrate 300 may comprise glass, quartz, sapphire, polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), rubber, glass fiber, other polymeric materials, other suitable substrate materials, or combinations thereof, but is not limited thereto. In some embodiments, the first substrate 100 may be made of a metal-glass fiber composite board, a metal-ceramic composite board, or a printed circuit board, etc. The material of the second substrate 300 may be the same as or different from the material of the first substrate 100.

[0060] Furthermore, the display device 80 also includes a third metal line 302a and a fourth metal line 302b disposed on the second substrate 300. The third metal line 302a and the fourth metal line 302b can be any conductive material on the second substrate. For example, the third metal line 302a and the fourth metal line 302b can each be a conductive material for a circuit on an array substrate. In some embodiments, the third metal line 302a and the fourth metal line 302b can be data lines or scan lines on the array substrate. The third metal line 302a and the fourth metal line 302b have thicknesses T5 and T6 respectively in the normal direction (X direction) of the first substrate 100. In some embodiments, the thickness T5 of the third metal line 302a can be in the range of about 0.1 μm to about 1 μm, or about 0.2 μm to about 0.6 μm. In some embodiments, the thickness T6 of the fourth metal line 302b can be in the range of about 0.1 μm to about 1 μm, or about 0.2 μm to about 0.6 μm. Furthermore, the thickness T5 of the third metal line 302a may be the same as or different from the thickness T6 of the fourth metal line 302b.

[0061] In some embodiments, the third metal wire 302a and the fourth metal wire 302b may each be formed of a conductive material. The materials used to form the third metal wire 302a and the fourth metal wire 302b may include copper, aluminum, tungsten, titanium, gold, silver, molybdenum, copper alloys, aluminum alloys, tungsten alloys, titanium alloys, gold alloys, silver alloys, molybdenum alloys, other suitable conductive materials, or combinations thereof, but are not limited thereto. In some embodiments, the third metal wire 302a and the fourth metal wire 302b may each be formed of a conductive material having a high melting temperature. In some embodiments, the third metal wire 302a and the fourth metal wire 302b may each be formed of a conductive material having a melting temperature in the range of about 660°C to about 3410°C. Furthermore, in some embodiments, the third metal wire 302a and / or the fourth metal wire 302b may have a multilayer structure.

[0062] like Figure 10 As shown, the display device 80 also includes a third pad 304a and a fourth pad 304b disposed on the second substrate 300. The third pad 304a and the fourth pad 304b are electrically connected to the third metal line 302a and the fourth metal line 302b, respectively. The third pad 304a provides an electrical connection between the integrated electronic component 200A and the third metal line 302a on the second substrate 300. The fourth pad 304b provides an electrical connection between the integrated electronic component 200A and the fourth metal line 302b on the second substrate 300. Figure 10As shown, the third pad 304a and the fourth pad 304b at least partially overlap with the third metal wire 302a and the fourth metal wire 302b, respectively, so that a good electrical connection can be maintained between the third pad 304a and the third metal wire 302a, and between the fourth pad 304b and the fourth metal wire 302b. Specifically, the overlap between the pads and the metal wires helps the transmission of electrical signals in the metal wires or reduces the possibility of leakage.

[0063] In some embodiments, the third pad 304a and the fourth pad 304b have thicknesses T7 and T8, respectively, in the normal direction (X direction) of the first substrate 100. In some embodiments, the thickness T7 of the third pad 304a may be in the range of about 0.2 μm to about 50 μm, or about 5 μm to about 15 μm. In some embodiments, the thickness T8 of the fourth pad 304b may be in the range of about 0.2 μm to about 50 μm, or about 5 μm to about 15 μm. The thickness T7 of the third pad 304a may be the same as or different from the thickness T8 of the fourth pad 304b. In some embodiments, the thickness T7 of the third pad 304a is greater than the thickness T5 of the third metal line 302a. In some embodiments, the thickness T8 of the fourth pad 304b is greater than the thickness T6 of the fourth metal line 302b. Furthermore, since the third pad 304a needs to carry more current than the first pad 104a, its area (or size) is larger than that of the first pad 104a. Similarly, in some embodiments, since the fourth pad 304b needs to carry more current than the second pad 104b, its area (or size) is larger than that of the second pad 104b.

[0064] In some embodiments, the third pad 304a and the fourth pad 304b may each be formed of the same or different conductive materials. The conductive materials used to form the third pad 304a and the fourth pad 304b may include solder, tin, indium, gallium, tin alloys, indium alloys, gallium alloys, gallium-indium alloys, or combinations thereof, but are not limited thereto. In some embodiments, the third pad 304a and the fourth pad 304b may each be formed of a conductive material having a lower melting temperature. Specifically, the third pad 304a and the fourth pad 304b may each be formed of a conductive material having a lower melting temperature compared to the melting temperatures of the third metal line 302a and the fourth metal line 302b. In some embodiments, the third pad 304a and the fourth pad 304b may each be formed of a conductive material having a melting temperature in the range of about 100°C to about 400°C.

[0065] On the other hand, it should be noted that the first metal line 102a of the integrated electronic component 200A further includes a third connecting post 310a, and the second metal line 102b of the integrated electronic component 200A further includes a fourth connecting post 310b. The third connecting post 310a and the fourth connecting post 310b are electrically connected to the first metal line 102a and the second metal line 102b, respectively. Figure 10 As shown, a first metal line 102a and a second metal line 102b extend from a first substrate 100 toward a second substrate 300 to provide an electrical connection between the integrated electronic component 200A and the second substrate 300. A third connecting post 310a and a fourth connecting post 310b also extend toward the second substrate 300. The third connecting post 310a and the fourth connecting post 310b extend toward a third pad 304a and a fourth pad 304b, respectively. Furthermore, the third connecting post 310a and the fourth connecting post 310b contact the third pad 304a and the fourth pad 304b, respectively. In some embodiments, at least a portion of the third connecting post 310a is embedded in the third pad 304a, and at least a portion of the fourth connecting post 310b is embedded in the fourth pad 304b. Therefore, the third connecting post 310a is electrically connected to the third pad 304a, and the fourth connecting post 310b is electrically connected to the fourth pad 304b.

[0066] In some embodiments, the connecting posts (third connecting post 310a and fourth connecting post 310b) and the metal wires (first metal wire 102a and second metal wire 102b) are integrally formed. The connecting posts and metal wires may be a continuous structure. In other embodiments, the connecting posts and metal wires are formed separately. The connecting posts and metal wires may be independent components. Furthermore, the connecting posts (third connecting post 310a and fourth connecting post 310b) and the conductive layer 208 may be formed of the same or different materials. Similarly, the second connecting post 210b and the metal wires (first metal wire 102a and second metal wire 102b) may be formed of the same or different materials. The third connecting post 310a and the fourth connecting post 310b may be formed of the same or different materials.

[0067] In some embodiments, the third connecting post 310a and the fourth connecting post 310b may each be formed of the same or different conductive materials. The materials used to form the third connecting post 310a and the fourth connecting post 310b may include copper, aluminum, tungsten, titanium, gold, silver, molybdenum, copper alloys, aluminum alloys, tungsten alloys, titanium alloys, gold alloys, silver alloys, molybdenum alloys, other suitable conductive materials, or combinations thereof, but are not limited thereto. In some embodiments, the third connecting post 310a and the fourth connecting post 310b may each be formed of a conductive material having a high melting temperature. In some embodiments, the third connecting post 310a and the fourth connecting post 310b may each be formed of a conductive material having a melting temperature in the range of about 660°C to about 3410°C. In some embodiments, the third connecting post 310a and the fourth connecting post 310b may each be formed of a conductive material having a relatively high melting temperature compared to the materials of the third pad 304a and the fourth pad 304b. In some embodiments, the first metal wire 102a and the second metal wire 102b may be formed of conductive materials having a relatively high melting temperature compared to the materials of the third pad 304a and the fourth pad 304b, respectively.

[0068] Furthermore, as described above, the first connecting post 210a and the second connecting post 210b are separated by a distance D1. In some embodiments, the distance D1 between the first connecting post 210a and the second connecting post 210b is in the range of about 1 μm to about 200 μm, or in the range of about 2 μm to about 50 μm. Figure 10 As shown, the third connecting post 310a and the fourth connecting post 310b are separated by a distance D2. In some embodiments, the distance D2 between the third connecting post 310a and the fourth connecting post 310b is in the range of about 3 μm to about 600 μm, or about 6 μm to about 150 μm. In some embodiments, the distance D2 between the third connecting post 310a and the fourth connecting post 310b is greater than the distance D1 between the first connecting post 210a and the second connecting post 210b. Furthermore, in some embodiments, the width W2 of the third connecting post 310a in the direction perpendicular to the normal of the second substrate 300 (e.g., the Y direction) may be greater than the width W1 of the first connecting post 210a in the Y direction. In some embodiments, the width or dimension of the fourth connecting post 310b may be greater than the width or dimension of the second connecting post 210b.

[0069] Furthermore, in some embodiments, the melting temperatures of the third connecting post 310a and the fourth connecting post 310b are higher than the melting temperatures of the third pad 304a and the fourth pad 304b, respectively. In some embodiments, the melting temperatures of the first metal wire 102a, the second metal wire 102b, the third metal wire 302a, and the fourth metal wire 302b are higher than the melting temperatures of the first pad 104a and the second pad 104b. Specifically, in some embodiments, the ratio of the melting temperature of the metal wire to the melting temperature of the pad is in the range of about 1.5 to about 35, or in the range of about 1.5 to about 17. It should be noted that the ratio of the melting temperature of the metal wire to the melting temperature of the pad should not be too small, otherwise the metal wire may melt or deform during heating, resulting in a risk of damage to the metal wire. In addition, the ratio of the melting temperature of the metal wire to the melting temperature of the pad should not be too large, otherwise the difference between the coefficient of thermal expansion of the metal wire and the coefficient of thermal expansion of the pad may be too large, causing the metal wire and the pad to peel off from each other.

[0070] As described above, the third pad 304a and the fourth pad 304b may be formed of a conductive material having a lower melting temperature compared to the material of the metal wire. The conductive material with a lower melting temperature used to form the pad may include solder, tin, indium, gallium, tin alloys, indium alloys, gallium alloys, gallium-indium alloys, or combinations thereof, but is not limited thereto. The third connecting post 310a and the fourth connecting post 310b may be formed of a conductive material having a higher melting temperature compared to the material of the pad. The conductive material with a higher melting temperature used to form the connecting post may include copper, aluminum, tungsten, titanium, gold, silver, molybdenum, copper alloys, aluminum alloys, tungsten alloys, titanium alloys, gold alloys, silver alloys, molybdenum alloys, other suitable conductive materials, or combinations thereof, but is not limited thereto. Furthermore, the third metal wire 302a and the fourth metal wire 302b may also be formed of a conductive material having a higher melting temperature compared to the material of the pad. The conductive material with a high melting temperature used to form the third metal line 302a and the fourth metal line 302b may include copper, aluminum, tungsten, titanium, gold, silver, molybdenum, copper alloys, aluminum alloys, tungsten alloys, titanium alloys, gold alloys, silver alloys, molybdenum alloys, other suitable conductive materials, or combinations thereof, but is not limited thereto.

[0071] The display device 80 further includes an adhesive layer 314 disposed between the first substrate 100 and the second substrate 300. The adhesive layer 314 bonds the first substrate 100 and the second substrate 300 together, and maintains physical contact between the third connecting post 310a and the fourth connecting post 310b and the third pad 304a and the fourth pad 304b on the second substrate 300, respectively. The adhesive layer 314 may be formed of an adhesive material. In some embodiments, the adhesive layer 314 may be an insulator. In some embodiments, the material of the adhesive layer 314 may include a thermosetting adhesive, a photocurable adhesive, or a combination thereof, but is not limited thereto. The photocurable adhesive may include a UV-curable adhesive or a visible-light-curable adhesive. Furthermore, the material of the adhesive layer 314 may be the same as or different from the material of the adhesive layer 214.

[0072] Next, please refer to Figures 11A-11C , Figures 11A-11C This diagram illustrates the steps of transferring an electronic device to a target substrate according to some embodiments of the present invention. Figure 11A As shown, the first substrate 100 may include a plurality of electronic devices 200 formed thereon. It should be understood that, although Figure 11A Only the electronic device 200 is shown, but in reality, the first substrate 100 may contain various components formed thereon (e.g., such as...). Figure 10 (As shown). In this embodiment, the first substrate 100 serves as an intermediate substrate to first assemble various components, such as the electronic device 200, and then transfer these components to the second substrate 300 (e.g., the target substrate). In some embodiments, the electronic device 200 may be a miniature LED that emits red, green, blue light, or a combination thereof.

[0073] In other embodiments, more than one intermediate substrate can be transferred to the second substrate 300, and the intermediate substrate can carry different electronic devices. For example, such as Figures 11A-11C As shown, the first substrates 100, 100', and 100'' can respectively carry different electronic devices 200, 200', and 200'', and the electronic devices 200, 200', and 200'' can be first integrated onto the second substrate 300 to form an integrated electronic assembly. Then, the second substrate 300 containing the integrated electronic assembly can be transferred to another target substrate. In some embodiments, the electronic devices 200, 200', and 200'' can be miniature LEDs emitting red, green, and blue light, respectively. As mentioned above, small electronic devices can be first integrated onto an intermediate substrate, and then the intermediate substrate carrying the integrated small electronic devices can be transferred to the target substrate (e.g., an array substrate of a display device). Therefore, compared to transferring small electronic devices one by one, transferring small electronic devices via an intermediate substrate can significantly reduce the required time.

[0074] In summary, the present invention provides a structure for improving the electrical connection efficiency between small electronic devices (e.g., sub-millimeter LEDs, micro LEDs, organic LEDs, inorganic LEDs (e.g., quantum dot LEDs), or integrated electronic components) and larger target substrates (e.g., array substrates). The display device provided by the present invention includes connecting posts that can be securely embedded in conductive components (e.g., interconnection pads) of the target substrate. Therefore, effective electrical connection between the electronic device and the circuitry on the target substrate can be maintained. Furthermore, according to some embodiments of the present invention, the arrangement of an intermediate substrate in the display device can reduce the time required to transfer small electronic devices to the target substrate.

[0075] While the embodiments and advantages of the present invention have been disclosed above, it should be understood that any person skilled in the art can make modifications, substitutions, and refinements without departing from the spirit and scope of the invention. Furthermore, the scope of protection of the present invention is not limited to the processes, machines, manufacturing, material composition, apparatus, methods, and steps described in the specific embodiments of the specification. Any process, machine, manufacturing, material composition, apparatus, method, and step that is currently or will be developed in the future can be understood from the disclosure of the present invention, and can be used according to the present invention as long as it can perform substantially the same function or obtain substantially the same result in the embodiments described herein. Therefore, the scope of protection of the present invention includes the above-described processes, machines, manufacturing, material composition, apparatus, methods, and steps. In addition, each claim constitutes an individual embodiment, and the scope of protection of the present invention also includes combinations of various claims and embodiments. The scope of protection of the present invention shall be determined by the claims.

Claims

1. An electronic device, characterized in that, include: A substrate having a normal direction; A first metal line and a second metal line are disposed on the substrate; A first pad and a second pad are disposed on the substrate, wherein, in the normal direction, the first pad overlaps one end of the first metal wire, and the second pad overlaps one end of the second metal wire; and An electronic device is disposed on the first pad and the second pad, wherein the electronic device is electrically connected to the first metal wire and the second metal wire through the first pad and the second pad. In the cross-sectional view of the electronic device, the first pad has a first side and a second side opposite to the first side, a first distance between the first side and the center of the first metal wire is greater than a second distance between the second side and the center of the first metal wire, and the first side does not overlap with the first metal wire.

2. The electronic device as claimed in claim 1, characterized in that, The electronic device is in contact with the first pad and the second pad.

3. The electronic device as claimed in claim 1, characterized in that, The electronic device at least partially overlaps with the first and second pads.

4. The electronic device as claimed in claim 1, characterized in that, The maximum width of the electronic device is less than the distance between the outer edges of the first pad and the outer edges of the second pad.

5. The electronic device as claimed in claim 4, characterized in that, The electronic device overlaps with the first pad and the second pad.

6. The electronic device as claimed in claim 1, characterized in that, The thickness of the portion of the first pad that overlaps with the first metal wire is less than the thickness of the first metal wire.

7. The electronic device as claimed in claim 1, characterized in that, The maximum width of the electronic device is less than the distance between the outer edges of the first metal wire and the outer edges of the second metal wire.

8. The electronic device as claimed in claim 1, characterized in that, The first pad has a raised portion.

9. The electronic device as claimed in claim 1, characterized in that, The electronic device includes a first conductive layer and a second conductive layer, wherein the first conductive layer is electrically connected to the first pad, and the second conductive layer is electrically connected to the second pad.

10. The electronic device as claimed in claim 9, characterized in that, The distance between the first conductive layer and the second conductive layer is in the range of 1 μm to 200 μm.

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