LED chip and manufacturing method thereof

Abstract

The invention discloses an LED chip and a manufacturing method thereof. The method comprises the steps of transferring a photolithography pattern of a side corrosion barrier layer to an edge position of an electrode in a stacked structure of an LED chip; growing a side corrosion barrier layer on the photolithography pattern of the side corrosion barrier layer to obtain a stacked structure of an LED chip with a side corrosion barrier layer, wherein the manufactured LED chip comprises a stacked structure of an LED chip, a side corrosion groove and a side corrosion barrier layer; the stacked structure of the LED chip comprises an electrode, and the side corrosion groove is located at an edge position of the electrode; the side corrosion barrier layer fills the side corrosion groove and covers a part of the surface of the electrode, and in a subsequent etching process, only a transparent insulating layer on the electrode hole is removed, which can effectively protect the edge of the electrode, thereby preventing the etching liquid from corroding the metal aluminum on the electrode, and only forming the side corrosion barrier layer at the edge position of the electrode, without blocking the light-emitting layer, and without affecting the light-emitting efficiency improved by the original transparent insulating layer, thereby ensuring the working performance of the LED chip.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor electronic technology, and in particular to an LED chip and a manufacturing method thereof. Background Art

[0002] Light-emitting diodes, or LEDs for short, are a commonly used semiconductor light-emitting device. In the LED chip process, a transparent insulating layer SiO2 (silicon dioxide) is often used as a film layer to protect the chip and improve the luminous efficiency. After SiO2 deposition, the P and N metal electrode holes need to be exposed to connect the wires at the package end for current transmission. Usually, the P and N electrode holes are exposed after being corroded with an acidic ammonium fluoride etching solution (BOE); when the P and N electrode holes are corroded, in addition to corroding the SiO2 on the surface, the edges of the metal electrodes will also be corroded, which cannot effectively prevent the side corrosion of the metal aluminum on the electrode, causing electrode bulging or the welding wire electrode to fall off; the corrosion of metal aluminum can be appropriately reduced by reducing the corrosion time, but the P and N electrode holes may not be corroded cleanly due to the reduction in time, which will cause current blocking and affect current transmission. Summary of the invention

[0003] The technical problem to be solved by the present invention is to provide an LED chip and a manufacturing method thereof, which can prevent the corrosive liquid from corroding the metal aluminum on the electrode.

[0004] In order to solve the above technical problems, a technical solution adopted by the present invention is:

[0005] A method for manufacturing an LED chip, comprising the steps of:

[0006] Transferring the photolithography pattern of the side corrosion blocking layer to the edge position of the electrode in the LED chip stacking structure;

[0007] A side corrosion blocking layer is grown on the side corrosion blocking layer photolithography pattern to obtain an LED chip stacking structure with a side corrosion blocking layer.

[0008] In order to solve the above technical problems, another technical solution adopted by the present invention is:

[0009] An LED chip manufactured using the above-mentioned method for manufacturing an LED chip, comprising an LED chip stacking structure, a side corrosion groove and a side corrosion barrier layer;

[0010] The LED chip stacking structure is provided with an electrode, and the side corrosion groove is located at the edge of the electrode;

[0011] The side corrosion barrier layer fills the side corrosion groove and covers part of the surface of the electrode.

[0012] The beneficial effects of the present invention are as follows: the side corrosion barrier layer photolithography pattern is transferred to the edge position of the electrode in the LED chip stacking structure, and the side corrosion barrier layer is grown on the side corrosion barrier layer photolithography pattern to obtain the LED chip stacking structure with the side corrosion barrier layer. By covering the edge of the electrode with a layer of side corrosion barrier layer, in the subsequent etching process, only the transparent insulating layer on the electrode hole is removed, which can effectively protect the edge of the electrode, thereby preventing the corrosive liquid from corroding the metal aluminum on the electrode, and only forming at the edge position of the electrode, without blocking the light-emitting layer, and without affecting the light-emitting efficiency improved by the original transparent insulating layer, thereby ensuring the working performance of the LED chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 A flowchart of a method for manufacturing an LED chip according to an embodiment of the present invention;

[0014] Figure 2 It is a structural cross-sectional view of an LED chip in the prior art;

[0015] Figure 3 for Figure 2 Detailed view of point A in the middle;

[0016] Figure 4 It is a top view of the electrode and side corrosion groove of the LED chip in the prior art;

[0017] Figure 5 A structural cross-sectional view of an LED chip according to an embodiment of the present invention;

[0018] Figure 6 for Figure 5 Detailed view of point B in the middle;

[0019] Figure 7 A top view of an electrode and a side corrosion groove of an LED chip according to an embodiment of the present invention;

[0020] Description of labels:

[0021] 1. LED chip stacking structure; 11. Electrode; 111. First electrode; 112. Second electrode; 12. Sapphire substrate; 13. First semiconductor layer; 14. Quantum well layer; 15. Second semiconductor layer; 16. Transparent conductive layer; 2. Side corrosion groove; 3. Side corrosion blocking layer; 4. Transparent insulating layer. DETAILED DESCRIPTION

[0022] In order to explain the technical content, achieved objectives and effects of the present invention in detail, the following is an explanation in combination with the implementation modes and the accompanying drawings.

[0023] Please refer to Figure 1 The present invention provides a method for manufacturing an LED chip, comprising the steps of:

[0024] Transferring the photolithography pattern of the side corrosion blocking layer to the edge position of the electrode in the LED chip stacking structure;

[0025] A side corrosion blocking layer is grown on the side corrosion blocking layer photolithography pattern to obtain an LED chip stacking structure with a side corrosion blocking layer.

[0026] From the above description, it can be seen that the beneficial effects of the present invention are: transferring the side corrosion barrier layer photolithography pattern to the edge position of the electrode in the LED chip stacking structure, growing the side corrosion barrier layer on the side corrosion barrier layer photolithography pattern, and obtaining an LED chip stacking structure with a side corrosion barrier layer. By covering the edge of the electrode with a layer of side corrosion barrier layer, in the subsequent etching process, only the transparent insulating layer on the electrode hole is removed, which can effectively protect the edge of the electrode, thereby preventing the corrosive liquid from corroding the metal aluminum on the electrode, and only forming at the edge position of the electrode, without blocking the light-emitting layer, and without affecting the light-emitting efficiency improved by the original transparent insulating layer, thereby ensuring the working performance of the LED chip.

[0027] Furthermore, before transferring the photoresist pattern of the side corrosion barrier layer to the edge position of the electrode in the LED chip stacking structure, the method includes:

[0028] A first semiconductor layer, a quantum well layer, and a second semiconductor layer are sequentially grown on a sapphire substrate by using a metal organic chemical vapor deposition method;

[0029] Mesa step etching is performed on the first semiconductor layer by using a reactive coupled plasma method to obtain a first semiconductor layer with a rough surface;

[0030] Using a sputtering method to perform evaporation on a side of the second semiconductor layer away from the quantum well layer to form a transparent conductive layer;

[0031] Performing evaporation on a side of the transparent conductive layer away from the second semiconductor layer to obtain a second electrode;

[0032] Performing evaporation on a side of the first semiconductor layer close to the quantum well layer to obtain a first electrode;

[0033] An LED chip stacking structure is formed based on the sapphire substrate, the first semiconductor layer, the first electrode, the quantum well layer, the second semiconductor layer, the transparent conductive layer and the second electrode.

[0034] From the above description, it can be seen that the LED chip stacking structure is formed based on the sapphire substrate, the first semiconductor layer, the first electrode, the quantum well layer, the second semiconductor layer, the transparent conductive layer and the second electrode, which ensures the basic working performance of the LED chip.

[0035] Furthermore, the step of transferring the photoresist pattern of the side corrosion barrier layer to the edge position of the electrode in the LED chip stacking structure includes:

[0036] Generate an annular side corrosion barrier layer photoresist pattern, wherein the difference between the inner diameter of the annular side corrosion barrier layer photoresist pattern and the diameter of the electrode is within a first preset range, and the difference between the outer diameter of the annular side corrosion barrier layer photoresist pattern and the diameter of the electrode is within a second preset range;

[0037] Coating a photoresist on the surface of the LED chip stacking structure to obtain a coated LED chip stacking structure;

[0038] The annular side corrosion barrier layer photoresist pattern is transferred to the edge position of the electrode in the coated LED chip stacking structure by using a photolithography process.

[0039] From the above description, it can be seen that a ring-shaped side corrosion barrier layer photoresist pattern is generated, and the ring-shaped side corrosion barrier layer photoresist pattern is transferred to the edge position of the electrode in the coated LED chip stacking structure using a photolithography process, which is convenient for positioning the side corrosion barrier layer and is beneficial to the subsequent growth of the side corrosion barrier layer.

[0040] Furthermore, the side corrosion barrier layer is grown on the side corrosion barrier layer photolithography pattern to obtain an LED chip stacking structure with the side corrosion barrier layer, comprising:

[0041] A side corrosion barrier layer of a preset thickness is grown on the side corrosion barrier layer photolithography pattern by a low-power sputtering method, wherein the DC power of the low-power sputtering method is 70 to 90 W, and the RF power of the low-power sputtering method is 220 to 280 W;

[0042] The photoresist is removed by adopting a stripping process to obtain an LED chip stacking structure with a side corrosion barrier layer.

[0043] From the above description, it can be seen that due to the high-power sputtering method, the sputtering rate is fast and the film grows fast, but the corrosion resistance of the film is poor, so a rapid annealing process at 500-550°C is required to improve the corrosion resistance. However, the rapid annealing process is carried out after the metal electrode is grown on the chip. The high temperature of 500-550°C will affect the electrode, causing the metal aluminum atoms to diffuse and migrate to accumulate and eventually precipitate, causing failure. Therefore, a low-power sputtering method is used to grow a side corrosion barrier layer of a preset thickness on the side corrosion barrier layer photolithography pattern. The sputtering rate is slow and the grain size is small, making the film layer denser, which can effectively improve the corrosion resistance of the side corrosion barrier layer.

[0044] Furthermore, the step of growing a side corrosion barrier layer on the side corrosion barrier layer photolithography pattern to obtain an LED chip stacking structure with a side corrosion barrier layer comprises:

[0045] Growing a transparent insulating layer on the surface of the LED chip stacked structure with the side corrosion barrier layer;

[0046] The transparent insulating layer corresponding to the electrode in the LED chip stacking structure with the side corrosion barrier layer is corroded by a BOE corrosion process until the electrode hole of the electrode is exposed to obtain an LED chip.

[0047] From the above description, it can be seen that the transparent insulating layer corresponding to the electrode in the LED chip stacking structure with a side corrosion barrier layer is corroded using the BOE corrosion process until the electrode hole of the exposed electrode is obtained, and the side corrosion barrier layer prevents corrosion of the electrode edge and ensures the luminous efficiency of the LED chip.

[0048] Please refer to Figure 2 , another embodiment of the present invention provides an LED chip, including an LED chip stacking structure, a side corrosion groove and a side corrosion barrier layer;

[0049] The LED chip stacking structure includes an electrode, and the side corrosion groove is located at the edge of the electrode;

[0050] The side corrosion barrier layer fills the side corrosion groove and covers a portion of the surface of the electrode.

[0051] From the above description, it can be seen that the beneficial effects of the present invention are: using a side corrosion barrier layer to fill the side corrosion groove and cover part of the surface of the electrode. By covering the edge of the electrode with a layer of side corrosion barrier layer, in the subsequent corrosion process, only the transparent insulating layer on the electrode hole is removed, which can effectively protect the edge of the electrode, thereby preventing the corrosive liquid from corroding the metal aluminum on the electrode, and only forming at the edge of the electrode, without blocking the light-emitting layer, and does not affect the light-emitting efficiency improved by the original transparent insulating layer, thereby ensuring the working performance of the LED chip.

[0052] Furthermore, the side corrosion groove and the side corrosion barrier layer are both annular structures;

[0053] The difference between the inner diameter of the side corrosion barrier layer and the diameter of the electrode is within a first preset range, and the difference between the outer diameter of the side corrosion barrier layer and the diameter of the electrode is within a second preset range.

[0054] From the above description, it can be seen that the difference between the inner diameter of the side corrosion barrier layer and the diameter of the electrode is within the first preset range, and the difference between the outer diameter of the side corrosion barrier layer and the diameter of the electrode is within the second preset range, which can better cover the edge position of the electrode and prevent the corrosive liquid from corroding the edge of the electrode.

[0055] Furthermore, the first preset range is 2-3 μm.

[0056] From the above description, it can be seen that the first preset range is 2-3 μm, which can prevent the corrosive liquid from corroding the metal aluminum on the electrode and does not affect the luminous efficiency of the LED chip.

[0057] Further, the electrode comprises a first electrode and a second electrode;

[0058] The LED chip stacking structure comprises the first electrode, the second electrode, and a sapphire substrate, a first semiconductor layer, a quantum well layer, a second semiconductor layer and a transparent conductive layer stacked in sequence;

[0059] The lengths of the quantum well layer, the second semiconductor layer and the transparent conductive layer are all shorter than the first semiconductor layer;

[0060] The first electrode is disposed on a side of the first semiconductor layer close to the quantum well layer;

[0061] The second electrode is disposed on a side of the transparent conductive layer away from the second semiconductor layer.

[0062] It can be seen from the above description that the LED chip stacking structure is arranged in this way to ensure the basic working performance of the LED chip.

[0063] Further, it also includes a transparent insulating layer;

[0064] The transparent insulating layer is coated on the surface of the LED chip stacking structure and avoids the side corrosion barrier layer and the electrode.

[0065] It can be seen from the above description that the transparent insulating layer insulates the LED chip from the outside world, thereby ensuring the working stability of the LED chip.

[0066] The LED chip and the manufacturing method thereof described above in the present invention are applicable to all LED chips, and are described below through specific implementation methods:

[0067] Embodiment 1

[0068] Please refer to Figure 1 , Figure 5 to Figure 7 A method for manufacturing an LED chip of this embodiment includes the following steps:

[0069] S0, using a metal organic chemical vapor deposition method to sequentially stack and grow a first semiconductor layer 13, a quantum well layer 14, and a second semiconductor layer 15 on a sapphire substrate 12;

[0070] The first semiconductor layer 13 is an N-type semiconductor layer, the second semiconductor layer 15 is a P-type semiconductor layer, in this embodiment, the N-type semiconductor layer is a gallium nitride-based N-type semiconductor layer, and the quantum well layer is a multi-quantum well layer;

[0071] S1, using a reactive coupled plasma method to perform Mesa step etching on the first semiconductor layer 13 to obtain a first semiconductor layer 13 with a rough surface;

[0072] S2, performing evaporation by sputtering on a side of the second semiconductor layer 15 away from the quantum well layer 14 to form a transparent conductive layer 16;

[0073] S3, performing evaporation deposition on a side of the transparent conductive layer 16 away from the second semiconductor layer 15 to obtain a second electrode 112;

[0074] Wherein, the second electrode 112 is a P electrode;

[0075] S4, performing evaporation deposition on a side of the first semiconductor layer 13 close to the quantum well layer 14 to obtain a first electrode 111;

[0076] Wherein, the first electrode 111 is an N electrode;

[0077] S5, forming an LED chip stacking structure 1 based on the sapphire substrate 12, the first semiconductor layer 13, the first electrode 111, the quantum well layer 14, the second semiconductor layer 15, the transparent conductive layer 16 and the second electrode 112;

[0078] S6, transferring the photoresist pattern of the side corrosion barrier layer to the edge position of the electrode 11 in the LED chip stacking structure 1, specifically comprising:

[0079] S61, generating an annular side corrosion barrier layer photoresist pattern, wherein the difference between the inner diameter of the annular side corrosion barrier layer photoresist pattern and the diameter of the electrode 11 is within a first preset range, and the difference between the outer diameter of the annular side corrosion barrier layer photoresist pattern and the diameter of the electrode 11 is within a second preset range;

[0080] The first preset range and the second preset range can be set according to the diameter of the electrode 11. In this embodiment, the first preset range is 2-3 μm, and the second preset range is 2-3 μm.

[0081] Specifically, a ring-shaped side corrosion barrier layer photoresist pattern is generated, and the inner diameter of the ring-shaped side corrosion barrier layer photoresist pattern is smaller than the first preset range of the diameter of the electrode 11, and the outer diameter of the ring-shaped side corrosion barrier layer photoresist pattern is larger than the second preset range of the diameter of the electrode 11;

[0082] In an optional embodiment, a ring-shaped side corrosion barrier layer photoresist pattern is generated, and the inner diameter of the ring-shaped side corrosion barrier layer photoresist pattern is smaller than the diameter of the electrode 11 by 2 μm, and the outer diameter of the ring-shaped side corrosion barrier layer photoresist pattern is larger than the diameter of the electrode 11 by 3 μm;

[0083] In another optional embodiment, a ring-shaped side corrosion barrier layer photoresist pattern is generated, and the inner diameter of the ring-shaped side corrosion barrier layer photoresist pattern is smaller than the diameter of the electrode 11 by 2.5 μm, and the outer diameter of the ring-shaped side corrosion barrier layer photoresist pattern is larger than the diameter of the electrode 11 by 2 μm;

[0084] In another optional embodiment, a ring-shaped side corrosion barrier layer photoresist pattern is generated, and the inner diameter of the ring-shaped side corrosion barrier layer photoresist pattern is smaller than the diameter of the electrode 11 by 3 μm, and the outer diameter of the ring-shaped side corrosion barrier layer photoresist pattern is larger than the diameter of the electrode 11 by 2.5 μm;

[0085] S62, coating a photoresist on the surface of the LED chip stacking structure 1 to obtain a coated LED chip stacking structure 1;

[0086] S63, using a photolithography process to transfer the annular side corrosion barrier layer photolithography pattern to the edge position of the electrode 11 in the coated LED chip stack structure 1;

[0087] Specifically, the annular side corrosion barrier layer photoresist pattern is exposed, and a developer is applied to the coated LED chip stacking structure 1 until the annular side corrosion barrier layer photoresist pattern is transferred to the edge position of the electrode 11 in the coated LED chip stacking structure 1;

[0088] S7, growing a side corrosion barrier layer 3 on the side corrosion barrier layer photolithography pattern to obtain an LED chip stacking structure 1 with a side corrosion barrier layer 3, specifically comprising:

[0089] S71, using a low-power sputtering method to grow a side corrosion barrier layer 3 of a preset thickness on the side corrosion barrier layer photolithography pattern, wherein the DC power of the low-power sputtering method is 70-90W, and the RF power of the low-power sputtering method is 220-280W;

[0090] Specifically, argon (Ar) is introduced to grow a side corrosion barrier layer 3 of a preset thickness on the side corrosion barrier layer photolithography pattern by a low-power sputtering method, wherein the direct current (DC) power of the low-power sputtering method is 70 to 90 W, and the radio frequency (RF) power of the low-power sputtering method is 220 to 280 W;

[0091] Wherein, the side corrosion barrier layer is transparent indium tin oxide (ITO), and the preset thickness is (Angstrom, a unit of length), the argon gas flow rate is 60-80 SCCM (volume flow unit, i.e., milliliters per minute);

[0092] In an optional embodiment, argon gas with a flow rate of 70 SCCM is introduced to grow on the side corrosion barrier layer photolithography pattern using a low-power sputtering method. The side corrosion barrier layer 3, the DC power of the low-power sputtering method is 80W, the RF power of the low-power sputtering method is 250W, under this condition, the DC power is reduced by 42% compared with the original conventional power of 140W, and the RF power is reduced by 39% compared with the original conventional power of 410W. The sputtering rate is reduced by 1.2% compared with the conventional sputtering method. Down to The sputtering rate is slow and the grain size is small, so the film layer is denser, and the corrosion resistance of the side corrosion barrier layer can be improved without the rapid annealing RTA process;

[0093] In another optional embodiment, argon gas with a flow rate of 60 SCCM is introduced to grow on the side corrosion barrier layer photolithography pattern using a low-power sputtering method. The side corrosion barrier layer 3, the DC power of the low-power sputtering method is 70W, and the RF power of the low-power sputtering method is 220W;

[0094] In another optional embodiment, argon gas with a flow rate of 80 SCCM is introduced to grow on the side corrosion barrier layer photolithography pattern using a low-power sputtering method. The side corrosion barrier layer 3, the DC power of the low-power sputtering method is 90W, and the RF power of the low-power sputtering method is 280W;

[0095] S72, removing the photoresist by a stripping process to obtain an LED chip stacking structure 1 with a side corrosion barrier layer 3;

[0096] Specifically, the photoresist and the excess film layer on the surface are removed by a stripping process to obtain an LED chip stacking structure 1 with a side corrosion barrier layer 3;

[0097] S8, growing a transparent insulating layer 4 on the surface of the LED chip stacked structure 1 with the side corrosion barrier layer 3;

[0098] Wherein, the material of the transparent insulating layer 4 is SiO2;

[0099] S9, using a BOE etching process to etch the transparent insulating layer 4 corresponding to the electrode 11 in the LED chip stacked structure 1 with the side corrosion barrier layer 3 until the electrode hole of the electrode 11 is exposed, thereby obtaining an LED chip.

[0100] Embodiment 2

[0101] Please refer to Figure 2 to Figure 7The LED chip of this embodiment is manufactured using the manufacturing method of the LED chip described in the first embodiment, and comprises an LED chip stacking structure 1, a side corrosion groove 2 and a side corrosion barrier layer 3, such as Figure 5 As shown;

[0102] The LED chip stacking structure 1 includes an electrode 11, and the side corrosion groove 2 is located at the edge of the electrode 11;

[0103] The side corrosion barrier layer 3 fills the side corrosion groove 2 and covers a portion of the surface of the electrode 11;

[0104] Specifically, the side corrosion groove 2 and the side corrosion barrier layer 3 are both annular structures;

[0105] The difference between the inner diameter of the side corrosion barrier layer 3 and the diameter of the electrode 11 is within a first preset range, and the difference between the outer diameter of the side corrosion barrier layer 3 and the diameter of the electrode 11 is within a second preset range;

[0106] Specifically, Figure 6 and Figure 7 As shown, the inner diameter of the side corrosion barrier layer 3 is smaller than the first preset range of the diameter of the electrode 11, and the outer diameter of the side corrosion barrier layer 3 is larger than the second preset range of the diameter of the electrode 11;

[0107] Wherein, the first preset range is 2 to 3 μm, and the second preset range is 2 to 3 μm;

[0108] Specifically, Figure 5 and Figure 6 As shown, the electrode 11 includes a first electrode 111 and a second electrode 112;

[0109] The LED chip stacking structure 1 includes the first electrode 111, the second electrode 112, and a sapphire substrate 12, a first semiconductor layer 13, a quantum well layer 14, a second semiconductor layer 15 and a transparent conductive layer 16 stacked in sequence;

[0110] The lengths of the quantum well layer 14, the second semiconductor layer 15 and the transparent conductive layer 16 are all shorter than the first semiconductor layer 13;

[0111] The first electrode 111 is disposed on a side of the first semiconductor layer 13 close to the quantum well layer 14;

[0112] The second electrode 112 is disposed on a side of the transparent conductive layer 16 away from the second semiconductor layer 15;

[0113] Specifically, Figure 5 As shown, it also includes a transparent insulating layer 4;

[0114] The transparent insulating layer 4 is coated on the surface of the LED chip stacking structure 1 and avoids the side corrosion barrier layer 3 and the electrode 11;

[0115] Here’s how it works:

[0116] The existing LED chip structure is as follows Figure 2 to Figure 4 As shown, the LED chip structure of the present invention is as follows Figure 5 to Figure 7 As shown, a side corrosion barrier layer 3 is grown on the side corrosion groove 2. Since the inner diameter of the side corrosion barrier layer 3 is smaller than the first preset range of the diameter of the electrode 11, and the outer diameter of the side corrosion barrier layer 3 is larger than the second preset range of the diameter of the electrode 11, the side corrosion barrier layer 3 can effectively wrap the edge position of the electrode 11, and in the subsequent BOE corrosion process, the edge of the electrode 11 can be protected from being corroded by the corrosion liquid. Moreover, since the side corrosion barrier layer 3 only covers the edge position of the electrode 11, it does not increase the blocking of the light-emitting layer and does not affect the luminescence rate of the LED chip.

[0117] In summary, the present invention provides an LED chip and a manufacturing method thereof, wherein a side corrosion barrier layer photolithography pattern is transferred to the edge position of an electrode in an LED chip stacking structure; a side corrosion barrier layer is grown on the side corrosion barrier layer photolithography pattern to obtain an LED chip stacking structure with a side corrosion barrier layer, so that the manufactured LED chip includes an LED chip stacking structure, a side corrosion groove and a side corrosion barrier layer; the LED chip stacking structure includes an electrode, and the side corrosion groove is located at the edge position of the electrode; the side corrosion barrier layer fills the side corrosion groove and covers a portion of the surface of the electrode, and the difference between the inner diameter of the side corrosion barrier layer and the diameter of the electrode is within a first preset range, and the difference between the outer diameter of the side corrosion barrier layer and the diameter of the electrode is within a second preset range. By covering the edge of the electrode with a layer of side corrosion barrier layer, in the subsequent etching process, only the transparent insulating layer on the electrode hole is removed, which can effectively protect the edge of the electrode, thereby preventing the corrosive liquid from corroding the metal aluminum on the electrode, and only forming at the edge position of the electrode, without blocking the light-emitting layer, and without affecting the light-emitting efficiency improved by the original transparent insulating layer, thereby ensuring the working performance of the LED chip.

[0118] The above descriptions are merely embodiments of the present invention and are not intended to limit the patent scope of the present invention. Any equivalent transformations made using the contents of the present invention's specification and drawings, or directly or indirectly applied in related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A method for manufacturing an LED chip, characterized in that: Includes steps: Transferring the photolithography pattern of the side corrosion blocking layer to the edge position of the electrode in the LED chip stacking structure; Growing a side corrosion barrier layer on the side corrosion barrier layer photolithography pattern to obtain an LED chip stacking structure with a side corrosion barrier layer; The step of transferring the photoresist pattern of the side corrosion barrier layer to the edge position of the electrode in the LED chip stacking structure comprises: Generate an annular side corrosion barrier layer photoresist pattern, wherein the difference between the inner diameter of the annular side corrosion barrier layer photoresist pattern and the diameter of the electrode is within a first preset range, and the difference between the outer diameter of the annular side corrosion barrier layer photoresist pattern and the diameter of the electrode is within a second preset range; Coating a photoresist on the surface of the LED chip stacking structure to obtain a coated LED chip stacking structure; Using a photolithography process to transfer the annular side corrosion barrier layer photoresist pattern to the edge position of the electrode in the coated LED chip stacking structure; The step of growing a side corrosion barrier layer on the side corrosion barrier layer photolithography pattern to obtain an LED chip stacking structure with a side corrosion barrier layer comprises: A side corrosion barrier layer of a preset thickness is grown on the side corrosion barrier layer photolithography pattern by a low-power sputtering method, wherein the DC power of the low-power sputtering method is 70-90W, and the RF power of the low-power sputtering method is 220-280W; The photoresist is removed by adopting a stripping process to obtain an LED chip stacking structure with a side corrosion barrier layer.

2. The method for manufacturing an LED chip according to claim 1, characterized in that: The method of transferring the photoresist pattern of the side corrosion barrier layer to the edge position of the electrode in the LED chip stacking structure includes: A first semiconductor layer, a quantum well layer, and a second semiconductor layer are sequentially grown on a sapphire substrate by using a metal organic chemical vapor deposition method; Mesa step etching is performed on the first semiconductor layer by using a reactive coupled plasma method to obtain a first semiconductor layer with a rough surface; Using a sputtering method to perform evaporation on a side of the second semiconductor layer away from the quantum well layer to form a transparent conductive layer; Performing evaporation on a side of the transparent conductive layer away from the second semiconductor layer to obtain a second electrode; Performing evaporation on a side of the first semiconductor layer close to the quantum well layer to obtain a first electrode; An LED chip stacking structure is formed based on the sapphire substrate, the first semiconductor layer, the first electrode, the quantum well layer, the second semiconductor layer, the transparent conductive layer and the second electrode.

3. The method for manufacturing an LED chip according to claim 1, characterized in that: After the side corrosion barrier layer is grown on the side corrosion barrier layer photolithography pattern to obtain the LED chip stacking structure with the side corrosion barrier layer, the following steps are included: Growing a transparent insulating layer on the surface of the LED chip stacked structure with the side corrosion barrier layer; The transparent insulating layer corresponding to the electrode in the LED chip stacking structure with the side corrosion barrier layer is corroded by a BOE corrosion process until the electrode hole of the electrode is exposed to obtain an LED chip.

4. An LED chip manufactured using the method for manufacturing an LED chip according to any one of claims 1 to 3, characterized in that: It includes an LED chip stacking structure, a side corrosion groove and a side corrosion barrier layer; The LED chip stacking structure includes an electrode, and the side corrosion groove is located at the edge of the electrode; The side corrosion barrier layer fills the side corrosion groove and covers a portion of the surface of the electrode.

5. The LED chip according to claim 4, characterized in that: The side corrosion groove and the side corrosion barrier layer are both annular structures; The difference between the inner diameter of the side corrosion barrier layer and the diameter of the electrode is within a first preset range, and the difference between the outer diameter of the side corrosion barrier layer and the diameter of the electrode is within a second preset range.

6. The LED chip according to claim 5, characterized in that: The first preset range is 2~3μm.

7. The LED chip according to claim 4, characterized in that: The electrodes include a first electrode and a second electrode; The LED chip stacking structure comprises the first electrode, the second electrode, and a sapphire substrate, a first semiconductor layer, a quantum well layer, a second semiconductor layer and a transparent conductive layer stacked in sequence; The lengths of the quantum well layer, the second semiconductor layer and the transparent conductive layer are all shorter than the first semiconductor layer; The first electrode is disposed on a side of the first semiconductor layer close to the quantum well layer; The second electrode is disposed on a side of the transparent conductive layer away from the second semiconductor layer.

8. The LED chip according to claim 4, characterized in that: Also included is a transparent insulating layer; The transparent insulating layer is coated on the surface of the LED chip stacking structure and avoids the side corrosion barrier layer and the electrode.

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