薄膜腔体声波谐振器的制备方法、薄膜腔体声波谐振器
By using diphenylene oxide materials and PECVD to fabricate thin-film cavity acoustic resonators, the mutual constraint between Q value and electromechanical coupling coefficient in FBAR filters was solved, thereby improving signal conversion efficiency and frequency control capability.
CN115333497BActive Publication Date: 2026-07-17GUANGZHOU AIFO LIGHT COMM TECH CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- GUANGZHOU AIFO LIGHT COMM TECH CO LTD
- Filing Date
- 2022-06-28
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
When the Q value of an existing FBAR filter is increased, the electromechanical coupling coefficient kt2 decreases, which prevents the transmission characteristics of the resonator from being improved.
Method used
A thin-film cavity acoustic resonator was fabricated by using diphenylene oxide as the bottom electrode layer and depositing a loose SiO2 layer by PECVD to form a cavity structure, thereby improving the Q value and electromechanical coupling coefficient.
Benefits of technology
By reducing the electrode layer thickness and optimizing material selection, signal conversion efficiency and power capacity were improved, and the frequency control capability of the resonator was enhanced.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN115333497B_ABST
Abstract
本发明公开一种薄膜腔体声波谐振器的制备方法、薄膜腔体声波谐振器。包含从下往上依序设置的硅衬底、底电极层、压电层以及顶电极层，所述硅衬底的顶面设有向下凹陷的空腔，所述底电极层为连二亚苯基底电极层；所述制备方法包括步骤S1：通过RCA清洗工艺对硅衬底进行处理，再烘干，再通过干法刻蚀在硅衬底表面刻蚀一个凹槽，并在凹槽处沉积牺牲层；步骤S2：在所述硅衬底沉积连二亚苯基底电极层材料；步骤S3：键合压电层材料；步骤S4：沉积顶电极层材料，并对其刻蚀获得图案；步骤S5：在空腔周围通过干法刻蚀获得释放窗口，将腐蚀溶液从所述释放窗口注入，把疏松的牺牲层去除，形成空气腔。本发明可以同时提升谐振器的Q值和机电耦合系数。
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