Diffraction columns, charged particle tools, and methods for diffraction of charged particles onto samples.

Abstract

A charged particle device for projecting a multi-beam of charged particles onto a sample, the device comprising: a primary column configured to generate a primary beam toward the sample, and a diffusion column for diffuser beams of charged particles toward the sample. The diffusion column comprises: a charged particle source (301) configured to emit a charged particle beam along a beam path; a source lens (310) disposed downstream of the charged particle source; a focusing lens (320) disposed downstream of the source lens; and an aperture body (350) disposed downstream of the focusing lens, wherein the aperture body allows a portion of the charged particle beam to pass through; and wherein the source lens is controllable to variably set the beam angle of the charged particle beam downstream of the source lens.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to EP application 20165312.8, filed on March 24, 2020, and EP application 21159851.1, filed on March 1, 2021, which are each incorporated herein by reference in their entirety. Technical Field

[0003] The present invention relates to a diffusion column, a charged particle device including the diffusion column, and a method for diffusion of charged particles onto a sample. Background Technology

[0004] When manufacturing semiconductor integrated circuit (IC) chips, undesirable pattern defects inevitably occur on the substrate (i.e., wafer) or mask during the manufacturing process, as a result of optical effects and incident particles, thereby reducing yield. Therefore, monitoring the extent of undesirable pattern defects is a critical process in IC chip manufacturing. More generally, the inspection and / or measurement of the surface of the substrate or other objects / materials is an important process during and / or after its manufacturing.

[0005] Pattern inspection tools with charged particle beams have been used to inspect objects, for example, to detect pattern defects. These tools typically employ electron microscopy techniques, such as scanning electron microscopy (SEM). In SEM, a primary electron beam of electrons at relatively high energies targets a final deceleration step so that it falls onto the sample with a relatively low landing energy. The electron beam is focused onto the sample as a probe spot. The interaction between the material structure at the probe spot and the landing electrons from the electron beam causes electrons to be emitted from the surface, such as secondary electrons, backscattered electrons, or Auger electrons. The generated secondary electrons can be emitted from the material structure of the sample. By scanning the primary electron beam, which serves as the probe spot, across the sample surface, secondary electrons can be emitted across the sample surface. By collecting these emitted secondary electrons from the sample surface, the pattern inspection tool can obtain an image representing the characteristics of the material structure of the sample surface.

[0006] Dedicated diffusion columns can be used in conjunction with SEM to utilize charged particles to diffuse large areas of a substrate or other sample surface, for example, to guide a large current (such as a high-density current) onto the sample in a relatively short time. Therefore, diffusion columns are a useful tool for pre-charging wafer surfaces and setting charging conditions for subsequent SEM inspection. Dedicated diffusion columns can enhance voltage-contrast defect signals, thereby increasing the defect detection sensitivity and / or throughput of SEM. During charged particle diffusion, the diffusion column is used to provide a relatively large number of charged particles, such as current, to rapidly charge a predefined area. The primary electron source of an electron beam inspection system is then applied to scan the area within the pre-charged region to achieve imaging of that area. Summary of the Invention

[0007] Embodiments of the present invention relate to a diffuse column and a charged particle device including the diffuse column.

[0008] According to the present invention, a diffuser column for diffuser emission of charged particles from a sample is provided, the diffuser column comprising: a charged particle source configured to emit a charged particle beam along a beam path; a source lens disposed downstream of the charged particle source; a focusing lens disposed downstream of the source lens; and an aperture body disposed downstream of the focusing lens, wherein the aperture body is used to allow a portion of the charged particle beam to pass through; and wherein the source lens is controllable to variably set the beam angle of the charged particle beam downstream of the source lens.

[0009] According to the present invention, a diffusion column for diffuser emission of charged particles from a sample is provided, the diffusion column comprising: a charged particle source configured to emit a beam of charged particles along a beam path; a source lens disposed downstream of the charged particle source; a focusing lens disposed downstream of the source lens; and an aperture body disposed downstream of the source lens and optionally the focusing lens, wherein the aperture body is used to allow a portion of the charged particle beam to pass through; and a controller configured to selectively operate the diffusion column in a high-density mode for diffuser emission of charged particles over a relatively small area of ​​the sample, and in a low-density mode for diffuser emission of charged particles over a relatively large area of ​​the sample.

[0010] According to the present invention, a diffuser column for diffuser emission of charged particles from a sample is provided, the diffuser column comprising: a charged particle source configured to emit a beam of charged particles along a beam path; a focusing lens disposed downstream of the charged particle source; and an aperture body disposed downstream of the focusing lens, wherein the aperture body is used to allow a portion of the charged particle beam to pass through; and an objective lens disposed downstream of the aperture body; wherein the objective lens is controllable to adjust the focus of the charged particle beam to an intersection point upstream of the sample, such that the lateral extent of the charged particle beam at the sample is greater than the lateral extent of the charged particle beam at the objective lens.

[0011] According to the present invention, a charged particle tool is provided for projecting a multi-beam of charged particles onto a sample, the charged particle tool comprising a diffuse column in the diffuse column provided by the present invention.

[0012] According to the present invention, a method for scattering charged particles onto a sample using a scattering column is provided. The method includes: emitting a charged particle beam along a beam path using a charged particle source; variably setting the beam angle of the emitted charged particle beam using a source lens disposed downstream of the charged particle source; adjusting the beam angle of the charged particle beam using a focusing lens disposed downstream of the source lens; and using an aperture body disposed downstream of the focusing lens to allow a portion of the charged particle beam to pass through.

[0013] According to the present invention, a method for scattering charged particles onto a sample using a scattering column is provided. The method includes: emitting a charged particle beam along a beam path using a charged particle source; adjusting the beam angle of the charged particle beam using a focusing lens disposed downstream of the charged particle source; allowing a portion of the charged particle beam to pass through using an aperture body disposed downstream of the focusing lens; and selectively operating the scattering column in a high-density mode and a low-density mode, the high-density mode being used for scattering charged particles onto a relatively small area of ​​the sample, and the low-density mode being used for scattering charged particles onto a relatively large area of ​​the sample.

[0014] According to the present invention, a method for scattering charged particles onto a sample using a scattering column is provided. The method includes: emitting a charged particle beam along a beam path using a charged particle source; adjusting the beam angle of the charged particle beam using a focusing lens disposed downstream of the charged particle source; allowing a portion of the charged particle beam to pass through using an aperture body disposed downstream of the focusing lens; and focusing the charged particle beam at an intersection point upstream of the sample using an objective lens, such that the lateral extent of the charged particle beam at the sample is greater than the lateral extent of the charged particle beam at the objective lens.

[0015] The advantages of the invention will become apparent from the following description taken in conjunction with the accompanying drawings, in which certain embodiments of the invention are illustrated by way of description and example. Attached Figure Description

[0016] The above and other aspects of this disclosure will become more apparent from the description of exemplary embodiments in conjunction with the accompanying drawings, in which:

[0017] Figure 1 A charged particle beam inspection device is schematically depicted.

[0018] Figure 2 A schematic depiction of a charged particle tool that can form Figure 1 Part of the charged particle beam inspection equipment;

[0019] Figure 3a An embodiment of the reflective column in, for example, a high-density operating mode is schematically depicted; and

[0020] Figure 3b An embodiment of the reflective column in, for example, a low-density operating mode is schematically depicted. Detailed Implementation

[0021] Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. The following description refers to the accompanying drawings, wherein the same numbers in different drawings denote the same or similar elements unless otherwise stated. The implementations set forth in the following description of the exemplary embodiments do not represent all implementations consistent with the present invention. Rather, they are merely examples of devices and methods consistent with aspects related to the present invention.

[0022] Enhanced computing power (reduced physical size of the device) in electronic devices can be achieved by significantly increasing the packaging density of circuit components (such as transistors, capacitors, diodes, etc.) on an IC chip. This has been achieved through increased resolution, which enables the fabrication of smaller structures. For example, the IC chip in a smartphone can include more than 2 billion transistors, each smaller than 1 / 1000th the size of a human hair; the IC chip was the size of a thumbnail and was available in 2019 or earlier. Therefore, it is not surprising that semiconductor IC manufacturing is a complex and time-consuming process with hundreds of individual steps. Even an error in one step can significantly affect the functionality of the final product. A single “fatal defect” can cause a device failure. The goal of a manufacturing process is to improve the overall process yield. For example, for a 50-step process (where one step can indicate the number of layers formed on the wafer), to achieve a 75% yield, each individual step must have a yield greater than 99.4%. If individual steps have a yield of 95%, the overall process yield will be as low as 7%.

[0023] While high process yields are required in IC chip manufacturing facilities, maintaining high substrate (i.e., wafer) throughput (defined as the number of substrates processed per hour) is also important. The presence of defects can impact both high process yields and high substrate throughput. This is especially true in situations where operator intervention is required to inspect for defects. Therefore, high-throughput detection and identification of micron- and nanometer-scale defects using inspection tools such as scanning electron microscopy (“SEM”) is crucial for maintaining high yields and low costs.

[0024] A Sequencing Analyzer (SEM) comprises a scanning apparatus and a detector device. The scanning apparatus includes an illumination system and a projection system. The illumination system includes an electron source for generating primary electrons, and the projection system is used to scan a sample, such as a substrate, using one or more focused beams of primary electrons. The primary electrons interact with the sample and generate secondary electrons. As the sample is scanned, the detection system captures the secondary electrons from the sample, allowing the SEM to create an image of the scanned area of ​​the sample. For high-throughput inspection, some inspection devices use multiple focused beams, i.e., multiple beams of primary electrons. The component beams in a multi-beam system can be referred to as sub-beams or split beams. Multiple beams can scan different portions of the sample simultaneously. Therefore, multi-beam inspection devices are able to inspect samples at much higher speeds than single-beam inspection devices.

[0025] The accompanying drawings are schematic. Therefore, for clarity, the relative dimensions of the components in the drawings are enlarged. In the following description of the drawings, the same or similar reference numerals refer to the same or similar components or entities, and only differences with respect to various embodiments are described. Although the description and drawings are directed to electro-optical devices, it should be understood that these embodiments are not intended to limit this disclosure to specific charged particles. Therefore, references to electrons in this document can be more generally considered as references to charged particles, where charged particles are not necessarily electrons.

[0026] Now for reference Figure 1 , Figure 1 This is a schematic diagram of a charged particle beam inspection device 100. Figure 1 The charged particle beam inspection device 100 includes a main chamber 10, a loading and locking chamber 20, an electron beam tool 40, an equipment front-end module (EFEM) 30, and a controller 50. The electron beam tool 40 is located within the main chamber 10. The charged particle tool 40 can be an electron beam tool. The charged particle tool 40 can be a single-beam tool or a multi-beam tool.

[0027] EFEM 30 includes a first loading port 30a and a second loading port 30b. EFEM 30 may include additional loading ports(s). For example, the first loading port 30a and the second loading port 30b may receive a front-opening integration chamber (FOUP) containing a substrate (e.g., a semiconductor substrate or a substrate made of other materials(s)) or a sample to be inspected (substrate, wafer, and sample are collectively referred to below as “sample”). One or more robotic arms (not shown) in EFEM 30 transport the sample to loading locking chamber 20.

[0028] Loading lock chamber 20 is used to remove gas surrounding the sample. This creates a vacuum where the local gas pressure is lower than the pressure in the surrounding environment. Loading lock chamber 20 can be connected to a loading lock vacuum pump system (not shown), which removes gas particles from loading lock chamber 20. Operation of the loading lock vacuum pump system enables loading lock chamber to reach a first pressure below atmospheric pressure. After reaching the first pressure, one or more robotic arms (not shown) transport the sample from loading lock chamber 20 to main chamber 10. Main chamber 10 is connected to a main chamber vacuum pump system (not shown). The main chamber vacuum pump system removes gas particles from main chamber 10, causing the pressure around the sample to reach a second pressure below the first pressure. After reaching the second pressure, the sample is transported to an electron beam tool, through which the sample can be subjected to charged particle irradiation and / or inspection.

[0029] The controller 50 is electrically connected to the electron beam tool 40. The controller 50 may be a processor (such as a computer) configured to control the charged particle beam inspection device 100. The controller 50 may also include a processing circuitry system configured to perform various signal and image processing functions. Although the controller 50 is... Figure 1 The controller 50 is shown outside the structure comprising the main chamber 10, the loading and locking chamber 20, and the EFEM 30; however, it should be understood that the controller 50 may be part of this structure. The controller 50 may be located in one of the components of the charged particle beam inspection device 100, or it may be distributed across at least two of the components.

[0030] Now for reference Figure 2 , Figure 2 This is a schematic diagram illustrating an exemplary charged particle tool 40. The charged particle tool 40 can be formed... Figure 1 This is part of the charged particle beam inspection device 100. The charged particle tool 40 may include the charged particle inspection tool 200. For example... Figure 1 As shown, the charged particle inspection tool 200 can be a multi-beam inspection tool 200. Alternatively, the charged particle inspection tool 200 can be a single-beam inspection tool. The charged particle inspection tool 200 includes an electron source 201, an aperture plate 271, a focusing lens 210, an optional source conversion unit 220, a primary projection system 230, a motorized stage 209, and a sample holder 207. The electron source 201, aperture plate 271, focusing lens 210, and optional source conversion unit 220 are components of the irradiation system included in the charged particle inspection tool 200. The sample holder 207 is supported by the motorized stage 209 to hold and optionally position a sample 208 (e.g., a substrate or mask), for example, for inspection or for charged particle irradiation. The charged particle inspection tool 200 may also include a secondary projection system 250 and an associated electronic detection device 240 (together they can form a detection column or detection system). The electronic detection device 240 may include multiple detection elements 241, 242, and 243. The primary projection system 230 may include an objective lens 231 and an optional source conversion unit 220 (if it is not part of the illumination system). The primary projection system and the illumination system together may be referred to as a primary column or a primary electron optical system. The beam splitter 233 and the deflection scanning unit 232 may be located inside the primary projection system 230.

[0031] The components used to generate the primary beam (e.g., the primary column) can be aligned with the primary electron optical axis of the charged particle inspection tool 200. These components may include: an electron source 201, a gun aperture plate 271, a focusing lens 210, a source conversion unit 220, a beam splitter 233, a deflection scanning unit 232, and a primary projection device 230. The primary column assembly (or actually the primary column) generates a primary beam (which may be multiple beams) directed toward the sample for sample inspection. The secondary projection system 250 and its associated electron detection device 240 can be aligned with the secondary electron optical axis 251 of the charged particle inspection tool 200.

[0032] The primary electron optical axis 204 is constituted by the electron optical axis of the charged particle inspection tool 200, which is part of the irradiation system. The secondary electron optical axis 251 is the electron optical axis of the charged particle inspection tool 200, which is part of the detection system (or detection column). The primary electron optical axis 204 may also be referred to herein as the primary optical axis (for ease of reference) or the charged particle optical axis. The secondary electron optical axis 251 may also be referred to herein as the secondary optical axis or the secondary charged particle optical axis.

[0033] The electron source 201 may include a cathode (not shown) and an extractor or anode (not shown). During operation, the electron source 201 is configured to emit electrons from the cathode as primary electrons. The primary electrons are extracted or accelerated by the extractor and / or the anode to form a primary electron beam 202, which forms a primary beam cross (virtual or real) 203. The primary electron beam 202 can be visualized as being emitted from the primary beam cross 203. In one arrangement, the electron source 201 operates at a high voltage (e.g., greater than 20 keV, preferably greater than 30 keV, 40 keV, or 50 keV). Electrons from the electron source have, for example, a high falling energy relative to a sample 208 on a sample holder 207.

[0034] In this arrangement, the primary electron beam is multi-beamed upon its arrival at the sample (and preferably before its arrival at the projection system). This multi-beaming can be generated from the primary electron beam in a variety of different ways. For example, the multi-beams can be generated by a multi-beam array located before the crossover, a multi-beam array located within source conversion unit 220, or a multi-beam array located at any point between these locations. The multi-beam array may include multiple electron beam manipulation elements arranged in an array across the beam path. Each manipulation element can influence the primary electron beam to generate a sub-beam. Thus, the multi-beam array interacts with the incident primary beam path to generate a multi-beam path downstream of the multi-beam array.

[0035] In operation, the aperture plate 271 is configured to block peripheral electrons in the primary electron beam 202 to reduce the Coulomb effect. The Coulomb effect can amplify the size of each probe spot in the probe spots 221, 222, and 223 of the primary sub-beams 211, 212, and 213, thus reducing the inspection resolution. The aperture plate 271 may also be referred to as a Coulomb aperture array.

[0036] The focusing lens 210 is configured to focus the primary electron beam 202. The focusing lens 210 can be designed to focus the primary electron beam 202 into a parallel beam and incident perpendicularly onto the source conversion unit 220. The focusing lens 210 can be a movable focusing lens, configured such that the position of its first principal plane is movable. The movable focusing lens can be configured to be magnetic. The focusing lens 210 can be an anti-rotation focusing lens and / or it can be movable.

[0037] Source conversion unit 220 may include an image forming element array, an aberration compensator array, a beam confinement aperture array, and a pre-bending micro-deflector array. The pre-bending micro-deflector array can deflect multiple primary sub-beams 211, 212, 213 of the primary electron beam 202 to enter the beam confinement aperture array, image forming element array, and aberration compensator array perpendicularly. In this arrangement, the image forming element array can function as a multi-beam array to generate multiple sub-beams, i.e., primary sub-beams 211, 212, 213, in a multi-beam path. The image forming array may include multiple electron beam manipulators, such as micro-deflectors or microlenses (or a combination of both), to influence the multiple primary sub-beams 211, 212, 213 of the primary electron beam 202 and form multiple parallel images (virtual or real) of the primary beam cross 203, each primary sub-beam of 211, 212, and 213 corresponding to one image. The aberration compensator array may include a field curvature compensator array (not shown) and an astigmatism compensator array (not shown). The field curvature compensator array may include multiple microlenses to compensate for field curvature aberrations in primary sub-bundles 211, 212, and 213. The astigmatism compensator array may include multiple micro-astigmatism reducers or multi-electrodes to compensate for astigmatic aberrations in primary sub-bundles 211, 212, and 213. The beam-limiting aperture array may be configured to limit the diameters of the individual primary sub-bundles 211, 212, and 213. Figure 2 Three primary sub-bundles 211, 212, and 213 are shown as examples, and it should be understood that the source conversion unit 220 can be configured to form any number of primary sub-bundles. The controller 50 can be connected to... Figure 1The charged particle beam inspection equipment 100 includes various components such as the source conversion unit 220, the electronic detection device 240, the primary projection device 230, or the motorized worktable 209. As explained in further detail below, the controller 50 can perform various image and signal processing functions. The controller 50 can also generate various control signals to manage the operation of the charged particle beam inspection equipment (including charged particle multi-beam equipment).

[0038] The focusing lens 210 can also be configured to adjust the current of the primary sub-bundles 211, 212, 213 downstream of the source conversion unit 220 by changing the focusing capability of the focusing lens 210. Alternatively, or additionally, the current of the primary sub-bundles 211, 212, 213 can be changed by altering the radial dimension of the beam-limiting aperture within the beam-limiting aperture array corresponding to each primary sub-bundle. The current can be changed by altering the radial dimension of the beam-limiting aperture and the focusing capability of the focusing lens 210. If the focusing lens is movable and magnetic, the off-axis sub-bundles 212 and 213 can cause the source conversion unit 220 to be illuminated at a rotational angle. The rotational angle changes with the focusing capability of the movable focusing lens or the position of the first principal plane. The focusing lens 210, acting as an anti-rotation focusing lens, can be configured to maintain a constant rotational angle when the focusing capability of the focusing lens 210 changes. When the focusing capability of the focusing lens 210 and the position of its first principal plane change, this movable focusing lens 210 can maintain the rotation angle.

[0039] Objective 231 can be configured to focus sub-beams 211, 212 and 213 onto sample 208 for inspection, and can form three probe spots 221, 222 and 223 on the surface of sample 208.

[0040] Beam splitter 233 may be, for example, a Wien filter including an electrostatic deflector that generates an electrostatic dipole field and a magnetic dipole field. Figure 2 (Not shown in the diagram). In operation, the beam splitter 233 can be configured to apply electrostatic forces to the individual electrons of the primary sub-bundles 211, 212, and 213 via an electrostatic dipole field. The electrostatic forces are equal in magnitude but opposite in direction to the magnetic forces applied to the individual electrons by the magnetic dipole field of the beam splitter 233. Therefore, the primary sub-bundles 211, 212, and 213 can pass through the beam splitter 233 at least substantially straight with at least substantially zero deflection angle.

[0041] In operation, the deflection scanning unit 232 is configured to deflect primary sub-beams 211, 212, and 213 to scan probe spots 221, 222, and 223 across various scanning regions in the surface portion of sample 208. In response to the incidence of primary sub-beams 211, 212, and 213 or probe spots 221, 222, and 223 on sample 208, electrons comprising secondary electrons and backscattered electrons are generated from sample 208. The secondary electrons propagate in three secondary electron beams 261, 262, and 263. Secondary electron beams 261, 262, and 263 typically contain secondary electrons (with electron energies ≤50 eV) and may also contain at least some of backscattered electrons (with electron energies between 50 eV and the landing energies of primary sub-beams 211, 212, and 213). Beam splitter 233 is arranged to deflect the paths of secondary electron beams 261, 262, and 263 toward secondary projection system 250. Secondary projection system 250 then focuses the paths of secondary electron beams 261, 262, and 263 onto multiple detection regions 241, 242, and 243 of electron detection device 240. Detection regions may be separate detection elements 241, 242, and 243 configured to detect corresponding secondary electron beams 261, 262, and 263. Detection regions generate corresponding signals, which are sent to controller 50 or signal processing system (not shown), for example, to construct an image of the corresponding scanned region of sample 208.

[0042] Detection elements 241, 242, and 243 can detect corresponding secondary electron beams 261, 262, and 263. When the secondary electron beams are incident on detection elements 241, 242, and 243, these elements can generate corresponding intensity signal outputs (not shown). The outputs can be directed to an image processing system (e.g., controller 50). Each detection element 241, 242, and 243 can include one or more pixels. The intensity signal output of the detection element can be the sum of signals generated by all pixels within the detection element.

[0043] The controller 50 may include an image processing system comprising an image acquirer (not shown) and a storage device (not shown). For example, the controller may include a processor, computer, server, mainframe, terminal, personal computer, any type of mobile computing device, or combinations thereof. The image acquirer may include at least a portion of the controller's processing capabilities. Therefore, the image acquirer may include at least one or more processors. The image acquirer may be communicatively coupled to an electronic detection device 240 of a device 40 that allows signal communication, such as an electrical conductor, fiber optic cable, portable storage medium, IR, Bluetooth, the Internet, wireless network, radio, or combinations thereof. The image acquirer may receive signals from the electronic detection device 240, process data included in the signals, and construct an image based thereon. Thus, the image acquirer may acquire an image of sample 208. The image acquirer may also perform various post-processing functions, such as generating contours, overlaying indicators on the acquired image, etc. The image acquirer may be configured to perform adjustments to the brightness and contrast of the acquired image, etc. The storage device may be a storage medium such as a hard disk, flash drive, cloud storage, random access memory (RAM), other types of computer-readable storage, etc. The storage device can be coupled to the image acquirer and can be used to save the scanned raw image data as an initial image and to save a post-processed image.

[0044] The image acquirer can acquire one or more images of a sample based on imaging signals received from the electronic detection device 240. The imaging signals may correspond to a scanning operation used for imaging charged particles. The acquired image may be a single image comprising multiple imaging regions. The single image may be stored in a storage device. The single image may be an initial image that can be divided into multiple regions. Each of these regions may include an imaging region containing features of the sample 208. The acquired images may include multiple images of a single imaging region of the sample 208 sampled multiple times over a period of time. Multiple images may be stored in a storage device. The controller 50 may be configured to perform image processing steps using multiple images of the same location on the sample 208.

[0045] The controller 50 may include a measurement circuitry (e.g., an analog-to-digital converter) to obtain the distribution of detected secondary electrons. The electron distribution data collected during the detection time window can be combined with corresponding scan path data of each of the primary sub-beams 211, 212, and 213 incident on the sample surface to reconstruct an image of the sample structure under inspection. The reconstructed image can be used to reveal various features of the internal or external structure of the sample 208. Thus, the reconstructed image can be used to reveal any defects that may be present in the sample.

[0046] The controller 50 can control the motorized stage 209 to move the sample 208 during inspection. At least during sample inspection, the controller 50 can cause the motorized stage 209 to move the sample 208 in a certain direction, for example, at a constant speed, preferably continuously. The controller 50 can control the movement of the motorized stage 209 such that it changes the speed of the sample 208 according to various parameters. For example, the controller can control the stage speed (including its direction) based on the characteristics of the inspection steps in the scanning process.

[0047] although Figure 2 The charged particle inspection tool 200 is shown using three primary electron sub-beams; however, it should be understood that the charged particle inspection tool 200 may use two or more primary electron sub-beams. This disclosure does not limit the number of primary electron beams used in the charged particle inspection tool 200. The charged particle inspection tool 200 may also be a single-beam inspection tool 200, which uses a single charged particle beam.

[0048] like Figure 2 As shown, the charged particle beam tool 40 may also include a diffusion column 300 or a diffusion gun. The diffusion column 300 can be used to precharge the surface of the sample 208 and set the charging conditions. For example, the diffusion column can precharge the surface of the sample 208 before inspection by the charged particle inspection device 200. This can enhance the voltage contrast defect signal, thereby increasing the defect detection sensitivity and / or throughput of the charged particle inspection device 200. The diffusion column 300 can be used to provide a relatively large number of charged particles to charge a predefined area. Subsequently, the charged particle inspection device 200 can scan the precharged area of ​​the sample 208 to achieve imaging of that area. The motorized stage 209 can move the sample 208 from a position for diffusion of charged particles by the diffusion column 300 to a position for inspection by the charged particle inspection device 200. In other words, the motorized stage 209 can be used to move the sample 208 to a position for diffusion of charged particles, and then the diffusion column 300 can diffuse the sample 208 with charged particles. The motorized worktable 209 can then move the sample 208 to a position for inspection. The charged particle inspection device 200 can then be used to inspect the sample 208. Alternatively, the position for charged particle scattering of the scattering column 300 can coincide with the position for inspection by the charged particle inspection device 200, such that the sample 208 and the motorized worktable 209 remain substantially in place after charged particle scattering and before inspection.

[0049] The diffuser column 300 may include a charged particle source 301 (which may be in a generator system), a focusing lens 320, a blanking electrode 330, an objective lens 340, and an aperture body 350. In one arrangement, the diffuser column includes at least the charged particle source 301, the focusing lens 320, the blanking electrode 330, the objective lens 340, and the aperture body 350. The diffuser column 300 may also include additional components for manipulating the charged particle beam 302, such as a scanning element (not shown) and a field lens (not shown). The components of the diffuser column 300 may be arranged substantially along an axis 304. The axis 304 may be the electro-optic axis of the diffuser column 300. The components of the diffuser column 300 may be controlled by a controller 50. Alternatively, a dedicated controller may be used to control the components of the diffuser column 300, or multiple corresponding controllers may be used to control the components of the diffuser column 300. The diffuser column 300 may be mechanically coupled to the charged particle inspection apparatus 200. Specifically, the diffuse column is coupled to the primary column of the charged particle inspection device 200. Ideally, the diffuse column is coupled to the primary column at the interface 350 between the diffuse column 300 and the primary column.

[0050] The charged particle source 301 may be an electron source. The charged particle source 301 may include a charged particle emitting electrode (e.g., a cathode) and an accelerating electrode (e.g., an anode). Charged particles are extracted from or accelerated by the accelerating electrode from the charged particle emitting electrode to form a charged particle beam 302. The charged particle beam 302 may propagate along a beam path 302. For example, the beam path 302 may include an axis 304, provided that the charged particle beam 302 does not deviate from the axis 304. In one arrangement, the electron source 301 operates at a high voltage (e.g., greater than 20 keV, preferably greater than 30 keV, 40 keV, or 50 keV). Electrons from the electron source 301 have, for example, high falling energy relative to the sample 208 on the sample holder 207. Preferably, the electron source 301 of the diffuse column operates at the same or at least substantially the same operating voltage as the electron source 201 of the primary column. The electrons from the electron source 301 of the diffuse column 300 ideally have the same or at least substantially similar landing energy as the electrons emitted by the electron source 201 of the inspection tool 200.

[0051] It is desirable that the sources 201, 301 of the scattering column and the primary column are at substantially the same operating voltage. This is because of the sample 2208, and therefore preferably, the substrate support and the desired movable stage 209 are set at the same operating voltage for inspection and / or measurement and scattering. That is, they can be biased to the source of the primary column during inspection and to the source of the scattering column during scattering. The relative potential between the primary source and the stage is high. The scattering column (such as those commercially available) has an operating voltage that is substantially lower than the high voltage of the inspection tool 200. During scattering, such a stage cannot be maintained at a high voltage because the stage is biased relative to the operating source (whether the scattering column or the primary column). Therefore, the bias of the stage should be changed to suit the source of the next operation. For commercially available scattering columns, the source can be set to a potential close to ground.

[0052] The stage can move between a diffuse position and an inspection / measurement position (e.g., an evaluation position). Moving the movable stage 209 between the diffuse position when the sample is in the beam path of the diffuse column and the inspection position when the sample is in the beam path of the primary column takes time. However, for typical commercial diffuse columns and high-voltage inspection tools, the time spent adjusting the stage potential between inspection and diffuse settings may be longer than the time spent moving between diffuse and inspection positions. Voltage changes can take several minutes. Therefore, there is a significant throughput improvement with diffuse columns having at least a similar operating voltage to the primary column; this is even true for inspection or measurement tools with a separate diffuse column having its own diffuse position in addition to the inspection position. Another or alternative benefit is that while reducing the time between diffuse and inspection and / or measurement, the diffuse effect still exists, and the risk that it disappears before inspection / measurement is reduced if it is not prevented.

[0053] The focusing lens 320 is located downstream of the charged particle source 301, meaning it is positioned downstream of the charged particle source 301. The focusing lens 320 can focus or defocus the charged particle beam 302. For example... Figure 2 As shown, the focusing lens 320 can be used to collimate the charged particle beam 302. However, the focusing lens 320 can also be used to control the charged particle beam 302 to generate a diverging or converging beam.

[0054] Aperture body 350 may be located downstream of focusing lens 320. Aperture body 350 may pass through part, or only part but not all, of the charged particle beam propagating along axis 304. Aperture body 350 may limit the lateral extent of charged particle beam 302, such as... Figure 2As shown. Aperture body 350 can also be used to selectively blank the charged particle beam 302 to prevent any portion of the charged particle beam 302 from passing through. Aperture body 350 can define an opening. If the lateral extent (or diameter) of the charged particle beam 302 is larger than the lateral extent (or diameter) of the opening, only a portion of the charged particle beam 302 will pass through the opening. Therefore, aperture body 350 can limit the lateral extent of the charged particle beam 302 to serve as a beam-limiting aperture. The cross-section of the beam downstream of aperture body 350 can be geometrically similar (in the case of diverging or converging beams) or geometrically identical (in the case of collimated beams) to the cross-section of the opening in aperture body 350. The opening can be substantially circular. The opening can have a lateral extent (or diameter) in the range of 100 μm to 10 mm (preferably from 200 μm to 5 mm, more preferably from 500 μm to 2 mm).

[0055] The blanking electrode 330 can be located downstream of the focusing lens 320 and upstream of the aperture body 350. The blanking electrode 330 can selectively deflect the charged particle beam 302, for example, deflecting it away from the axis 304. The blanking electrode 330 can also deflect the charged particle beam 302 away from the opening in the aperture body 350, for example, deflecting it to a portion of the aperture body 350 excluding the opening, so as to prevent any portion of the charged particle beam 302 from passing through the opening defined by the aperture body 350. The blanking electrode 330 can blank the beam so that the beam does not pass through the opening of the aperture body 350. However, the combination of the blanking electrode 330 and the aperture body 350 can also be used to selectively blank the charged particle beam 302, i.e., selectively prevent at least a portion of the charged particle beam 302 from passing through the opening in the aperture body 350. That is, the combination of the blanking electrode 330 and the aperture body 350 can selectively control the proportion of the charged particle beam 302 passing through the opening.

[0056] Objective lens 340 is located downstream of aperture body 350. Objective lens 340 can focus or defocus the charged particle beam 302. For example... Figure 2 As shown, objective lens 320 can be used to control the charged particle beam 302 to generate a diverging beam, thereby increasing the spot size on sample 208 and increasing the surface area on sample 208 where charged particles are diffused. However, in some cases, objective lens 340 can be used to control the charged particles 302 to generate a converging beam, thereby focusing the charged particle beam 302 onto sample 208. Field lens ( Figure 2 (Not shown) (e.g., located downstream of the objective lens) can be used to set the electric field strength between the field lens and the sample 208. This electric field affects the charged particles as they travel toward the sample 208, thereby affecting the charging rate and charging level of the sample 208 during charged particle scattering (i.e., the maximum voltage of the sample 208 relative to electrical ground after charged particle scattering).

[0057] Figure 3a and Figure 3b An embodiment of the radiating column 300 is schematically depicted, such as... Figure 2 The diffuser column 300 may include a charged particle source 301, a focusing lens 320, a blanking electrode 330, an aperture body 350, an objective lens 340, and a field lens 370. The charged particle source 301 includes a charged particle emitting electrode 301a (e.g., a cathode) and an accelerating electrode 301b (e.g., an anode). The diffuser column may also include a source lens 310. Optionally, the diffuser column 300 may include a scanning electrode 360.

[0058] The diffuse column 300 can be selectively operated in different operating modes, such as a high-density mode (e.g., Figure 3a (illustrative depiction) and in low-density mode (such as) Figure 3b (The operation is illustrated in the schematic diagram.) The diffuse column 300 can switch between a high-density operating mode and a low-density operating mode. Alternatively, the diffuse column 300 can operate in only one operating mode, such as either a high-density mode or a low-density mode. The controller 50 can control the operating mode of the diffuse column 300 to selectively operate the diffuse column 300 in a high-density mode and a low-density mode. The user can instruct the diffuse column 300 or the controller 50 to selectively operate in one of the operating modes. Alternatively, the controller 50 can automatically control the operating mode of the diffuse column 300, for example, based on a preset program or operating sequence.

[0059] The high-density mode is used for the diffusion of charged particles over a relatively small area of ​​sample 208. In the high-density mode, the lateral extent (or diameter) of the charged particle beam 302 incident on sample 208, also referred to herein as the lateral extent (or diameter) of the beam spot, is relatively small. The lateral extent (or diameter) of the beam spot in the high-density mode is relatively small, especially compared to the lateral extent (or diameter) of the beam spot in the low-density mode. Thus, the charge density of the beam spot in the high-density mode is relatively high, especially compared to the charge density of the beam spot in the low-density mode. In the high-density mode, the lateral extent (or diameter) of the beam spot can be in the range of 0 to 1000 μm, preferably between 5 μm and 500 μm. However, the spot size depends on the application. Typical applications require a range of 25 μm to 500 μm, which is the preferred operating range of the embodiments. The beam spot can then be selected from the operating range during operation according to the application. The upper limit of the operating range is chosen because it is difficult to achieve the required current density above 500 μm. For available optical devices, the lower limit of this range can be higher than 5 μm, for example, 10 μm, 25 μm or 50 μm.

[0060] The low-density mode is used for the diffusion of charged particles over a relatively large area of ​​sample 208. In the low-density mode, the lateral extent (or diameter) of the beam spot is relatively large, particularly compared to the lateral extent (or diameter) of the beam spot in the high-density mode. Thus, the charge density of the beam spot in the low-density mode is relatively low, particularly compared to the charge density of the beam spot in the high-density mode. In the low-density mode, the lateral extent (or diameter) of the beam spot can be greater than 500 μm, preferably greater than 1 mm, more preferably greater than 3 mm, and particularly preferably greater than 5 mm, for example, about 8 mm. The lateral extent (or diameter) of the beam spot in the low-density mode can range from 500 μm to 50 mm (preferably from 1 mm to 20 mm, more preferably from 3 mm to 15 mm, and particularly preferably from 5 mm to 12 mm).

[0061] like Figure 3a and Figure 3b As shown, the diffuser column 300 may include a source lens 310. The source lens 310 is arranged or positioned downstream of the charged particle source 301, for example, directly downstream, particularly downstream of the accelerating electrode (e.g., anode) of the charged particle source 301. The source lens 310 is arranged or positioned upstream of the focusing lens 320, for example, directly upstream of the focusing lens 320. The source lens 310 can manipulate the charged particle beam 302, particularly by adjusting the focal point or beam angle α of the charged particle beam 302 downstream of the source lens 310 and upstream of the focusing lens 320. (Note that all references to beam angle in this specification refer to the maximum angular displacement across the beam cross section. An alternative definition of beam angle could be the maximum angular displacement of the beam relative to the electron optical axis, such as...) Figure 3a and Figure 3b As shown by the dashed line in the diagram. An alternative definition of the beam angle relative to the axis would be half of the beam angle provided herein. The source lens 310 preferably manipulates the charged particle beam 302 to generate a diverging charged particle beam 302 upstream of the focusing lens 320. Figure 3a and Figure 3b As shown, source lens 310 can focus a charged particle beam onto a crosspoint C1 located upstream of convergent lens 320, thereby generating a diverging charged particle beam 302 upstream of convergent lens 320 (and downstream of crosspoint C1). In some arrangements, this can allow for greater beam divergence (i.e., a larger beam angle α) compared to defocusing charged particle beam 320. Alternatively, source lens 310 can defocus charged particle beam 302, thereby generating a diverging charged particle beam 302 upstream of convergent lens 320 (not shown). By defocusing, the source lens diverges the beam path relative to a virtual crosspoint upstream of source lens 310. The beam angle α of the diverging beam is thus determined relative to the virtual crosspoint. In the following, reference to beam angle α should be understood to refer to both embodiments with a cross and a virtual cross upstream of source lens 310.

[0062] like Figure 3a As shown, for example in high-density mode, source lens 310 can be controllable to variably set the beam angle α (or focus / defocus) of the charged particle beam 302, thereby setting the degree of divergence of the charged particle beam 302 downstream of source lens 310 (for virtual crossover) or upstream of crossover point C1. When source lens 310 focuses the charged particle beam 302 onto crossover point C1, source lens 310 can be controllable to variably set the position of crossover point C1 along axis 304. Therefore, source lens 310 can be used to change the beam angle α of the charged particle beam 302. Source lens 310 can be used to set the beam angle α to a plurality of (predetermined) values ​​within a range. Alternatively, source lens 310 can be used to change the beam angle α within a predetermined continuous range. Source lens 310 can, for example, change the beam angle α in a range of at least 0° to 5° (preferably at least 0° to 10°). This can adjust the charged particle beam 302 (e.g., Figure 3a The collimated charged particle beams 302 and 302' shown are laterally distributed downstream of the focusing lens 320 and upstream of the aperture body 350. Adjusting the lateral range of the charged particle beam 302 can variably set the proportion of the charged particle beam 302 passing through the aperture body 350. The source lens 310 can, for example, vary the proportion of the charged particle beam 302 passing through the aperture body within a range of at least 100% to 50% (preferably at least 100% to 25%, more preferably at least 100% to 10%, particularly preferably at least 100% to 5%).

[0063] For example, Figure 3a The source lens 310 is shown to selectively set the beam angle to α or α', thereby generating crosspoints C1 and C1', respectively. For example... Figure 3a As shown, this alters the lateral extent of the charged particle beams 302, 302' upstream of the aperture body 350, and is independent of the beam angle of the charged particle beam 302 upstream of the aperture body 350 (which can be set by the focusing lens 320, for example, to zero degrees 0° relative to the electron optical axis, to produce a collimated charged particle beam 302). The beam angles α, α' can be variably set using the source lens 310, thereby effectively and variably setting the proportion of the charged particle beams 302, 302' passing through the aperture body 350. Reference Figure 3a When the source lens 310 is set with a relatively large beam angle α, the lateral range of the charged particle beam 302 upstream of the aperture 350 is relatively large, resulting in a relatively small proportion of the charged particle beam 302 passing through the aperture body 350. Conversely, when the source lens 310 is set with a relatively small beam angle α', the lateral range of the charged particle beam 302' upstream of the aperture 350 is relatively small, resulting in a relatively large proportion of the charged particle beam 302' passing through the aperture body 350.

[0064] Alternatively or otherwise, for example in low-density mode, the source lens 310 may also be controllable to set or fix the beam angle α (or focusing / defocusing amount) of the charged particle beam 302 downstream of the source lens 310. This is, for example, in Figure 3b As shown in the diagram. When the source lens 310 focuses the charged particle beam 302 onto the crosspoint C1, the source lens 310 can be controllable to set or fix the position of the crosspoint C1 (which may be dummy and upstream of the source lens 310) along the axis 304. This can fix the proportion of the charged particle beam 302 passing through the aperture body 350. For example, the source lens 310 can set the beam angle α to the maximum beam angle used in high-density mode. The source lens 310 can set the beam angle α to maximize the lateral range of the charged particle beam at the focusing lens 320. This can produce the maximum diverging beam downstream of the aperture body 350, which can ultimately achieve the maximum spot size at the sample 208. For example, the source lens 310 can achieve a magnification of the charged particle beam 302 (from the source lens 310 to the focusing lens 320) in the range of 1 to 20 (preferably from 2 to 15, more preferably from 5 to 10).

[0065] like Figure 3a As shown, for example, in high-density mode, the focusing lens 320 can be controllable to collimate or substantially collimate the charged particle beam 302. The focusing lens 320 can be controllable to set the beam angle of the charged particle beam 302 downstream of the focusing lens 320 and upstream of the aperture body 350 to 0°, or substantially 0°, for example, to a value in the range of 0° to 5° relative to the axis 304. The focusing lens 320 can be controllable to fix the beam angle of the charged particle beam 302 upstream of the aperture body 350. Therefore, the focusing lens 320 can counteract any influence that the source lens 310 may have on the beam angle of the charged particle beam 302 upstream (positive) of the aperture body 350.

[0066] Alternative or additional land, such as Figure 3b As shown, for example in low-density mode, the focusing lens 350 can be controllable to generate a diverging beam of charged particles 302 upstream of the aperture body 305. For example, the focusing lens 320 can be controllable to focus the charged particle beam 302 at the intersection C2 downstream of the focusing lens 320 and upstream of the aperture body 350, such that the charged particle beam 302 diverges upstream and downstream of the aperture body. This can increase the lateral range of the charged particle beam 302 at the objective lens 340 compared to the case where the charged particle beam 302 downstream of the aperture body 350 is collimated. See, for example, [link to example]. Figure 3b and Figure 3aThe increased lateral range of the charged particle beam 302 at objective lens 340 allows the objective lens to further increase or maximize the beam spot at sample 208. Objective lens 340 can focus the charged particle beam 302. The focusing effect of objective lens 340 on charged particles in the charged particle beam 302 that are closer to axis 304 is greater than that on charged particles that are further away from axis 304 (and thus closer to the electrodes of objective lens 340). Therefore, the focusing effect of objective lens 340 achieves a greater displacement of charged particles that are further away from axis 304. Converging lens 320 can be positioned such that a certain proportion of the charged particle beam 302 passes through aperture body 350, for example less than 60%, preferably less than 50%, and further optionally less than 40%. For some applications, the proportion passing through the aperture can be as low as 20% or even 10%. The distribution of charged particles in the charged particle bundle 302 upstream of the aperture body 350 can be more non-uniform at the edges of the charged particle bundle 302 than at its center. The distribution of charged particles in the charged particle bundle 302 upstream of the aperture body 350 can, for example, be a Gaussian distribution. Allowing such a charged particle bundle 302 to pass through the aperture body 350 can limit the lateral extent of the charged particle bundle 302, thereby eliminating its edges. Thus, only the center of the charged particle bundle 302 can pass through the aperture body 350. This can lead to an improvement in the uniformity of the charged particle bundle 302 downstream of the aperture body 350 compared to the charged particle bundle 302 upstream of the aperture body 350. Allowing only a smaller proportion of the charged particle bundle 302 to pass through the aperture body 350 can also limit the current reaching the sample 208, which is advantageous in some applications.

[0067] Aperture body 350 is preferably disposed downstream of convergent lens 320. In some embodiments, aperture body 350 may be disposed upstream of convergent lens and downstream of source lens 310. Having aperture body 350 downstream of convergent lens is preferred because greater control over the beam and its beam spot can be achieved in this arrangement. Aperture body 350 is used to allow at least a portion of charged particle beam 302 to pass through. Aperture body 350 can limit the lateral extent of charged particle beam 302 (e.g., in…). Figure 3a high-density patterns and Figure 3b In low-density modes). In some cases, aperture 350 may not restrict the lateral range of charged particle beam 302, and all charged particle beams 302 can pass through aperture 302. When charged particle beam 302 is diverging upstream of aperture 350, aperture 350 can affect the beam angle of charged particle beam 302 because the beam angle β upstream of aperture 350 is greater than the beam angle β' downstream of aperture 350, as from Figure 3b It is obvious from the text.

[0068] Optionally, the blanking electrode 330 is disposed upstream of the aperture body 350. The blanking electrode 330 may also be disposed downstream of the focusing lens 330. The blanking electrode 300 may deflect the charged particle beam 302 away from the axis 304 to prevent any portion of the charged particle beam 302 from passing through the aperture body 350, for example, toward the sample 208.

[0069] Objective lens 340 is positioned downstream of aperture body 350. Objective lens 340 is controllable to adjust the focus of charged particle beam 302. Objective lens 340 is used to adjust the focus of charged particle beam 302, thereby adjusting the lateral extent (or diameter) of the beam spot formed by the incident charged particle beam 302 on sample 208.

[0070] like Figure 3a As shown, for example in high-density mode, objective 340 can be controllable to adjust the focus of charged particle beam 302 such that the lateral extent (or diameter) of the beam spot is smaller than the lateral extent (or diameter) of charged particle beam 302 at objective 340.

[0071] Alternatively or additionally, for example in low-density mode, objective 340 may be controllable to manipulate charged particle beam 302 such that the lateral extent (or diameter) of the beam spot is greater than the lateral extent (or diameter) of charged particle beam 302 at objective 340. This is, for example, in Figure 3b As shown in the diagram, objective lens 340 can be controllable to focus the charged particle beam 302 at a crosspoint C3 upstream of sample 208, such that the lateral extent (or diameter) of the beam spot is greater than the lateral extent (or diameter) of the charged particle beam 302 at objective lens 340. Preferably, crosspoint C3 is located upstream of the final element of the overglaze column 300, for example, upstream of the field lens 370 of the overglaze column 300. Creating crosspoint C3 allows for an increase in the lateral extent of the beam spot at sample 208 compared to not creating crosspoint C3. This is possible because crosspoint C3 can be closer to the final element of the overglaze column 300 than the (virtual) focus of the charged particle beam 208 diverging directly downstream of objective lens 340. Therefore, beam spots larger than 1 mm (e.g., up to 20 mm, or even 50 mm) can be achieved.

[0072] The intersection point C3 can be positioned such that the ratio d' / d of i) the distance d' between the intersection point C3 and the surface of the sample 208 along the axis 304 and ii) the distance d between the center of the objective lens 340 and the intersection point C3 along the axis 304 is greater than 1, preferably greater than 1.2, more preferably greater than 1.5, and particularly preferably greater than 2. The ratio d' / d can be in the range of 1 to 10 (preferably from 1.2 to 6, more preferably from 1.5 to 4, and particularly preferably from 2 to 3). In other words, the magnification of the charged particle beam 302 by the objective lens 340 (from the objective lens 340 to the surface of the sample 208) can be in the range of 1 to 10 (preferably from 1.2 to 6, more preferably from 1.5 to 4, and particularly preferably from 2 to 3).

[0073] Optionally, the reflective column 300 may include scanning electrodes 360, such as a pair of scanning electrodes 360. The scanning electrodes 360 may be arranged or positioned downstream of the aperture body 350. Figure 3a and Figure 3b As shown, the scanning electrode 360 ​​can be arranged or positioned upstream of the objective lens 340. Alternatively, the scanning electrode 360 ​​can be arranged downstream of the objective lens 340, for example, between the objective lens 340 and the field lens 370, or downstream of the field lens 370.

[0074] The scanning electrodes 360 (preferably a pair of scanning electrodes 360) can be controllable to scan the charged particle beam 302 across the sample 208, for example, in a high-density mode. The scanning electrodes 360 can be controllable to variably cause the charged particle beam 302 to move, for example, in one dimension (in... Figure 3a The charged particle beam 302, which is angularly displaced about axis 304, can be deflected (from top to bottom). Alternatively, additional scanning electrodes can be provided to variably deflect the charged particle beam 302 across sample 208. For example, each pair can scan the charged particle beam 302 in different directions on the sample surface, preferably in two orthogonal dimensions. Using scanning electrodes to deflect the charged particle beam 302 to scan sample 208 can be faster than moving sample 208 relative to a stationary (i.e., unscanned) charged particle beam 302. The speed achieved by scanning is faster than that achieved by a motorized stage 209 and sample 208 due to the smaller inertia of the charged particles. This is especially true when the beam spot on sample 208 is relatively small (e.g., in the case of a relatively small beam spot). Figure 3a In high-density mode), it may be helpful to use scanning electrode 360 ​​to achieve faster scattering of charged particles onto sample 208 (or at least the portion of sample 208 that needs to be scattered).

[0075] Alternatively or additionally, for example in low-density mode, the scanning electrode 360 ​​can be controllable so as not to manipulate the charged particle beam 302. The scanning electrode 360 ​​can be controllable to maintain or preserve the beam path of the charged particle beam 302, thereby not deflecting the charged particle beam 302. The scanning electrode 360 ​​can be controlled in this way (e.g., in the low-density operating mode of the diffuse column 300). In cases where the beam spot on the sample 208 is relatively large (such as in…), Figure 3b In low-density mode), the use of scanning electrode 360 ​​can reduce the maximum possible range of the beam spot on sample 208. This is because deflecting the charged particle beam 302 may require a gap between the charged particle beam 208 and the final element of the diffuse column. Therefore, for example in Figure 3b In the low-density mode, the use of scanning electrode 360 ​​may be counterproductive in maximizing the lateral extent of the beam spot on sample 208.

[0076] In one embodiment, a diffuser column 300 is provided for diffuser emission of charged particles from a sample 208. The diffuser column 300 includes a charged particle source 301 configured to emit a charged particle beam 302 along a beam path. The diffuser column 300 also includes a source lens 301 disposed downstream of the charged particle source 301. The diffuser column 300 also includes a focusing lens 320 disposed downstream of the source lens 301. The diffuser column 300 further includes an aperture body 330 disposed downstream of the source lens 310, preferably downstream of the focusing lens 320. The aperture body 350 is used to allow a portion of the charged particle beam 302 to pass through. The diffuser column 300 also includes a controller 50. The controller 50 selectively operates the diffuser column 300 in a high-density mode and a low-density mode, the high-density mode being used for diffuser emission of charged particles over a relatively small area of ​​sample 208, and the low-density mode being used for diffuser emission of charged particles over a relatively large area of ​​sample 208. The source lens 301 can be controllable to focus the charged particle beam 302 onto a crossover point C1 upstream of the focusing lens 320 and the position of the crossover point C1 along the beam path can be variably set.

[0077] In one embodiment, a method is provided for scattering charged particles onto a sample 208 using a scattering column 300. The method includes: emitting a charged particle beam 302 along a beam path using a charged particle source 301. The method further includes: variably setting the beam angle α of the emitted charged particle beam 302 using a source lens 310 disposed downstream of the charged particle source 301. The method further includes: adjusting the beam angle of the charged particle beam 302 using a focusing lens 320 disposed downstream of the source lens 310. The method further includes: allowing a portion of the charged particle beam 302 to pass through using an aperture body 350 disposed downstream of the focusing lens 320.

[0078] In one embodiment, a method for scattering charged particles onto a sample 208 using a scattering column 300 is also provided. The method includes: emitting a charged particle beam 302 along a beam path using a charged particle source 301. The method further includes: adjusting the beam angle α of the charged particle beam 302 using a focusing lens 320 disposed downstream of the charged particle source 301. The method further includes: allowing a portion of the charged particle beam 302 to pass through using an aperture body 350 disposed downstream of the focusing lens 310. The method further includes: selectively operating the scattering column 300 in a high-density mode for scattering charged particles over a relatively small area of ​​the sample 208, and in a low-density mode for scattering charged particles over a relatively large area of ​​the sample 208.

[0079] In one embodiment, a method for scattering charged particles onto a sample 208 using a scattering column 300 is also provided. The method includes: emitting a charged particle beam 302 along a beam path using a charged particle source 301. The method further includes: adjusting the beam angle α of the charged particle beam 302 using a focusing lens 320 disposed downstream of the charged particle source 301. The method further includes: using an aperture body 350 disposed downstream of the focusing lens 320 to allow a portion of the charged particle beam 302 to pass through. The method further includes: using an objective lens 340 to focus the charged particle beam 302 onto an upstream intersection point C3 of the sample 208, such that the lateral extent of the charged particle beam 302 at the sample 208 is greater than the lateral extent of the charged particle beam 302 at the objective lens 240.

[0080] Evaluation tools according to embodiments of the present invention may be tools for qualitative evaluation of samples (e.g., pass / fail), tools for quantitative measurement of samples (e.g., size of features), or tools for generating images of sample maps. Examples of evaluation tools are inspection tools (e.g., for identifying defects), viewing tools (e.g., for classifying defects), and measurement tools.

[0081] While the invention has been described in conjunction with various embodiments, other embodiments of the invention will be apparent to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of the invention are indicated by the appended claims. References to examination throughout the specification are also intended to relate to measurement, i.e., measurement applications. References to a charged particle beam 302 downstream or upstream of an element include direct upstream or direct downstream of that element. References to the first element upstream and downstream of the second element may refer to direct upstream or direct downstream, but may also include embodiments in which other elements are provided between the first and second elements where appropriate.

[0082] References to the controllability of an assembly to manipulate the charged particle beam 302 in a certain way include a controller 50 controlling the assembly to manipulate it in this manner, and other controllers or devices (e.g., voltage sources) controlling the assembly to manipulate it in this manner. For example, the controller may be electrically connected to the assembly of the diffuser column, the selection of the assembly, or all electrostatic assemblies. A voltage source may be electrically connected to the assembly to provide a potential to the assembly, which may be different from adjacent assemblies in the beam path. For example, a lens may have a potential applied to it by a voltage supply. The applied potential may be applied between the surface of the lens and the beam path. The surface of the lens may generally be orthogonal to the beam path. For example, the potential applied to the lens surface may operate between the lens surface and the surface of an adjacent assembly in the beam path, the surface of which may generally be orthogonal to the beam path. Adjacent assemblies are electrically connected, and it may be connected to a voltage source that applies a potential to the adjacent assembly, such that the potential is applied to the surface of the adjacent assembly. The controller may be connected to the voltage source of the lens and the adjacent assembly to control their operation, thereby controlling the beam along the beam path. It should be noted that the components of the diffuse beam include deflectors, such as scanning deflectors. These deflectors may have electrodes that can be arranged around the beam path. Each electrode is electrically connected. The electrodes of the deflector can be controlled independently or together. The deflector electrodes can be independently connected to a voltage source or a common voltage source.

[0083] References to the crossover point include the real crossover point, which is achieved by focusing the charged particle beam 302 onto the crossover point (such as...). Figure 3a and Figure 3b This is achieved through the intersection points C1, C2, and C3 in the diagram. Where appropriate, references to intersection points may also include dummy intersection points, which are located upstream of the element that causes the charged particle beam 302 to diverge. A dummy intersection point is the point from which the charged particle beam 302 begins to diverge.

[0084] All references to beam angle in this specification refer to the maximum angular displacement across the beam cross section. Alternative definitions of beam angle may include the maximum angular displacement of the beam relative to the electron optical axis, such as... Figure 3a and Figure 3b As shown by the dashed line in the diagram. An alternative definition of the bend angle relative to the axis would be half the bend angle provided in this document.

[0085] The embodiments provide the following terms:

[0086] Clause 1: A diffuser column for diffuser emission of charged particles from a sample, the diffuser column comprising: a charged particle source configured to emit a charged particle beam along a beam path; a source lens disposed downstream of the charged particle source; a focusing lens disposed downstream of the source lens; and an aperture body disposed downstream of the focusing lens, the aperture body being used to allow a portion of the charged particle beam to pass through; and wherein the source lens is controllable to variably set the beam angle of the charged particle beam downstream of the source lens.

[0087] Clause 2: A diffuse column as described in Clause 1, wherein the focusing lens is controllable to collimate the charged particle beam, and wherein the source lens is controllable to variably set the beam angle of the charged particle beam downstream of the source lens, thereby adjusting the lateral range of the collimated charged particle beam downstream of the focusing lens and upstream of the aperture body.

[0088] Clause 3: A diffuse column as described in Clause 1 or 2, wherein the focusing lens is controllable to focus the charged particle beam at the intersection downstream of the focusing lens and upstream of the aperture body, such that the charged particle beam diverges downstream of the aperture body.

[0089] Clause 4: The diffuse column as described in any one of Clauses 1 to 3 further includes an objective lens disposed downstream of the aperture body, wherein preferably, the objective lens is controllable to adjust the focus of the charged particle beam, thereby adjusting the lateral extent of the beam spot formed by the incident charge particle beam on the sample.

[0090] Clause 5: A diffuse column as described in Clause 4, wherein the objective lens is controllable to adjust the focus of the charged particle beam such that the lateral extent of the beam spot is smaller than the lateral extent of the charged particle beam at the objective lens.

[0091] Clause 6: A diffuse column as described in Clause 4 or 5, wherein the objective lens is controllable to manipulate the charged particle beam such that the lateral extent of the beam spot is greater than the lateral extent of the charged particle beam at the objective lens.

[0092] Clause 7: A diffuse column as described in any one of Clauses 4 to 6, wherein the objective is controllable to focus the charged particle beam at a cross point upstream of the sample, such that the lateral extent of the beam spot is greater than the lateral extent of the charged particle beam at the objective.

[0093] Clause 8: The diffuse column as described in any of the preceding clauses further includes a pair of scanning electrodes arranged downstream of the aperture body.

[0094] Clause 9: A diffuse column as described in Clause 8, wherein the pair of scanning electrodes is controllable to scan a beam of charged particles across the sample.

[0095] Clause 10: A diffuse column as described in Clause 8 or 9, wherein the pair of scanning electrodes is controllable so as not to manipulate the charged particle beam.

[0096] Clause 11: The diffraction column as described in any of the preceding clauses further includes a controller configured to selectively operate the diffraction column in a high-density mode and a low-density mode, the high-density mode being used for diffraction of charged particles over a relatively small area of ​​the sample and the low-density mode being used for diffraction of charged particles over a relatively large area of ​​the sample.

[0097] Clause 12: A diffuse column as described in Clause 11, wherein in high-density mode: the source lens is controllable to variably set the beam angle of the charged particle beam downstream of the source lens, and / or the condenser lens is controllable to collimate the charged particle beam, the source lens being controllable to variably set the beam angle of the charged particle beam downstream of the source lens, thereby adjusting the lateral range of the collimated charged particle beam downstream of the condenser lens and upstream of the aperture body; and / or the objective lens is controllable to adjust the focus of the charged particle beam such that the lateral range of the beam spot is smaller than the lateral range of the charged particle beam at the objective lens; and / or the pair of scanning electrodes is controllable to scan the charged particle beam across the sample.

[0098] Clause 13: A diffuse column as described in Clause 11 or 12, wherein in low-density mode: the source lens is controllable to set the beam angle of the charged particle beam downstream of the source lens; and / or the condenser lens is controllable to focus the charged particle beam at the intersection downstream of the condenser lens and upstream of the aperture body, such that the charged particle beam diverges downstream of the aperture body; and / or the objective lens is controllable to manipulate the charged particle beam such that the lateral extent of the beam spot is greater than the lateral extent of the charged particle beam at the objective lens; and / or the pair of scanning electrodes is controllable to not manipulate the charged particle beam; and / or the source lens is controllable to cause the charged particle beam to diverge upstream of the condenser lens.

[0099] Clause 14: A diffusion column for diffusion of charged particles onto a sample, the diffusion column comprising: a charged particle source configured to emit a beam of charged particles along a beam path; a source lens disposed downstream of the charged particle source; a focusing lens disposed downstream of the source lens; and an aperture body disposed downstream of the source lens, wherein the aperture body is used to allow a portion of the charged particle beam to pass through; and a controller configured to selectively operate the diffusion column in a high-density mode for diffusion of charged particles onto a relatively small area of ​​the sample, and in a low-density mode for diffusion of charged particles onto a relatively large area of ​​the sample.

[0100] Clause 15: A diffuse column as described in Clause 14, wherein in high-density mode: the source lens is controllable to variably set the beam angle of the charged particle beam downstream of the source lens, and / or the condenser lens is controllable to collimate the charged particle beam, and the source lens is controllable to variably set the beam angle of the charged particle beam downstream of the source lens, thereby adjusting the lateral range of the collimated charged particle beam downstream of the condenser lens and upstream of the aperture body; and / or the objective lens is controllable to adjust the focus of the charged particle beam such that the lateral range of the beam spot is smaller than the lateral range of the charged particle beam at the objective lens; and / or the pair of scanning electrodes is controllable to scan the charged particle beam across the sample.

[0101] Clause 16: A diffuse column as described in Clause 14 or 15, wherein in low-density mode: the source lens is controllable to set the beam angle of the charged particle beam downstream of the source lens; and / or the condenser lens is controllable to focus the charged particle beam at the intersection downstream of the condenser lens and upstream of the aperture body, such that the charged particle beam diverges downstream of the aperture body; and / or the objective lens is controllable to manipulate the charged particle beam such that the lateral extent of the beam spot is greater than the lateral extent of the charged particle beam at the objective lens; and / or the pair of scanning electrodes is controllable to not manipulate the charged particle beam; and / or the source lens is controllable to cause the charged particle beam to diverge upstream of the condenser lens.

[0102] Clause 17: A diffuser column for diffuser emission of charged particles from a sample, the diffuser column comprising: a charged particle source configured to emit a charged particle beam along a beam path; a focusing lens disposed downstream of the charged particle source; and an aperture body disposed downstream of the focusing lens, wherein the aperture body is used to allow a portion of the charged particle beam to pass through; an objective lens disposed downstream of the aperture body; and wherein the objective lens is controllable to focus the charged particle beam at an intersection point upstream of the sample, such that the lateral extent of the charged particle beam at the sample is greater than the lateral extent of the charged particle beam at the objective lens.

[0103] Clause 18: The diffuse column as described in Clause 17 further includes a source lens arranged downstream of the charged particle source and upstream of the focusing lens, wherein the source lens is controllable to variably set the beam angle of the charged particle beam downstream of the source lens.

[0104] Clause 19: A diffuse column as described in Clause 17 or 18, wherein the focusing lens is controllable to collimate the charged particle beam, and wherein the source lens is controllable to variably set the beam angle of the charged particle beam downstream of the source lens, thereby adjusting the lateral range of the collimated charged particle beam downstream of the focusing lens and upstream of the aperture body.

[0105] Clause 20: A diffuse column as described in any one of Clauses 17 to 19, wherein the focusing lens is controllable to focus a charged particle beam at an intersection downstream of the focusing lens and upstream of the aperture body, such that the charged particle beam diverges downstream of the aperture body.

[0106] Clause 21: A diffuse column as described in any one of Clauses 17 to 20, wherein the objective is controllable to adjust the focus of the charged particle beam such that the lateral extent of the beam spot is smaller than the lateral extent of the charged particle beam at the objective.

[0107] Clause 22: The diffuse column as described in any one of Clauses 17 to 21 further includes a pair of scanning electrodes arranged downstream of the aperture body.

[0108] Clause 23: A diffuse column as described in Clause 22, wherein the pair of scanning electrodes is controllable to scan a beam of charged particles across a sample.

[0109] Clause 24: A diffuse column as described in Clause 22 or 23, wherein the pair of scanning electrodes is controllable so as not to manipulate the charged particle beam.

[0110] Clause 25: The diffraction column as described in any one of Clauses 17 to 24 further includes a controller configured to selectively operate the diffraction column in a high-density mode and a low-density mode, the high-density mode being used for diffraction of charged particles over a relatively small area of ​​the sample and the low-density mode being used for diffraction of charged particles over a relatively large area of ​​the sample.

[0111] Clause 26: A diffuse column as described in Clause 25, wherein in high-density mode: the source lens is controllable to variably set the beam angle of the charged particle beam downstream of the source lens, and / or the condenser lens is controllable to collimate the charged particle beam, and the source lens is controllable to variably set the beam angle of the charged particle beam downstream of the source lens, thereby adjusting the lateral range of the collimated charged particle beam downstream of the condenser lens and upstream of the aperture body; and / or the objective lens is controllable to adjust the focus of the charged particle beam such that the lateral range of the beam spot is smaller than the lateral range of the charged particle beam at the objective lens; and / or the pair of scanning electrodes is controllable to scan the charged particle beam across the sample.

[0112] Clause 27: A diffuse column as described in Clause 25 or 26, wherein in low-density mode: the source lens is controllable to set the beam angle of the charged particle beam downstream of the source lens; and / or the condenser lens is controllable to focus the charged particle beam at the intersection downstream of the condenser lens and upstream of the aperture body, such that the charged particle beam diverges downstream of the aperture body; and / or the objective lens is controllable to manipulate the charged particle beam such that the lateral extent of the beam spot is greater than the lateral extent of the charged particle beam at the objective lens; and / or the pair of scanning electrodes is controllable to not manipulate the charged particle beam; and / or the source lens is controllable to cause the charged particle beam to diverge upstream of the condenser lens.

[0113] Clause 28: A charged particle tool for projecting a multi-beam of charged particles onto a sample, the charged particle tool comprising any one of the preceding clauses.

[0114] Clause 29: The charged particle tool as described in Clause 28 further includes a primary column configured to generate a primary beam directed toward the sample for evaluation of the sample.

[0115] Clause 30: A charged particle tool as described in Clause 29, wherein the primary column includes a primary charged particle source configured to emit a charged particle beam having a similar landing energy to the charged particle beam of the diffuse column.

[0116] Clause 31: The charged particle tool as described in Clause 30 further includes a sample support configured to support a sample, the sample support being configured to be set at the same voltage when the sample is configured to be in the beam path of the charged particle source of the diffuse column and when it is in the path of the beam path of the primary charged particle beam.

[0117] Clause 32: The charged particle tool as described in Clause 31 further includes a movable stage configured to move a sample support between a diffuse position when the sample is in the beam path of the charged particle beam of the diffuse column and an evaluation position when the sample is in the beam path of the primary charged particle beam, preferably spaced apart from the inspection position and / or preferably spaced apart from the beam path of the primary charged particle beam of the diffuse column.

[0118] Clause 33: A method for scattering charged particles onto a sample using a scattering column, the method comprising: emitting a beam of charged particles along a beam path using a charged particle source; variably setting the beam angle of the emitted charged particle beam using a source lens disposed downstream of the charged particle source; adjusting the beam angle of the charged particle beam using a focusing lens disposed downstream of the source lens; and using an aperture body disposed downstream of the focusing lens to allow a portion of the charged particle beam to pass through.

[0119] Clause 34: The method of Clause 33, wherein adjusting the beam angle of the charged particle beam using a focusing lens comprises: collimating the charged particle beam; and wherein the beam angle of the charged particle beam downstream of the source lens is variably set, adjusting the lateral range of the collimated charged particle beam downstream of the focusing lens and upstream of the aperture body.

[0120] Clause 35: The method described in Clause 33 or 34 further comprises: focusing the charged particle beam at an intersection downstream of the focusing lens and upstream of the aperture body, such that the charged particle beam diverges downstream of the aperture body.

[0121] Clause 36: The method of any one of Clauses 33 to 35 further comprises: using an objective lens disposed downstream of the aperture body to adjust the focus of the charged particle beam, thereby adjusting the lateral extent of the beam spot formed by the incident charge particle beam on the sample.

[0122] Clause 37: The method described in Clause 36, wherein adjusting the focus of the charged particle beam using an objective lens comprises: adjusting the focus of the charged particle beam such that the lateral extent of the beam spot is smaller than the lateral extent of the charged particle beam at the objective lens.

[0123] Clause 38: The method described in Clause 36 or 37, wherein adjusting the focus of the charged particle beam using an objective lens comprises: manipulating the charged particle beam such that the lateral extent of the beam spot is greater than the lateral extent of the charged particle beam at the objective lens.

[0124] Clause 39: The method of any one of Clauses 36 to 38, wherein adjusting the focus of the charged particle beam using an objective lens comprises: focusing the charged particle beam at a cross point upstream of the sample such that the lateral extent of the beam spot is greater than the lateral extent of the charged particle beam at the objective lens.

[0125] Clause 40: The method of any one of Clauses 33 to 39 further comprises: scanning a beam of charged particles across the sample using a pair of scanning electrodes arranged downstream of the aperture body.

[0126] Clause 41: The method of any one of Clauses 33 to 40 further comprises: selectively operating the diffraction column in a high-density mode and a low-density mode, the high-density mode being used for diffraction of charged particles over a relatively small area of ​​the sample and the low-density mode being used for diffraction of charged particles over a relatively large area of ​​the sample.

[0127] Clause 42: The method as described in Clause 41, wherein operating the diffuse column in high-density mode comprises: using a source lens to variably set the beam angle of the emitted charged particle beam, and / or using a condenser lens to collimate the charged particle beam, using a source lens to variably set the beam angle of the emitted charged particle beam, thereby adjusting the lateral extent of the collimated charged particle beam downstream of the condenser lens and upstream of the aperture body; and / or using an objective lens to adjust the focus of the charged particle beam such that the lateral extent of the beam spot is smaller than the lateral extent of the charged particle beam at the objective lens; and / or using a scanning electrode to scan the charged particle beam across the sample.

[0128] Clause 43: The method as described in Clause 41 or 42, wherein operating the diffuse column in low-density mode comprises: using a source lens to set the beam angle of the emitted charged particle beam, preferably such that the charged particle beam diverges upstream of the focusing lens; and / or using the focusing lens to focus the charged particle beam at an intersection downstream of the focusing lens and upstream of the aperture body, such that the charged particle beam diverges downstream of the aperture body; and / or using an objective lens to manipulate the charged particle beam such that the lateral extent of the beam spot is greater than the lateral extent of the charged particle beam at the objective lens.

[0129] Clause 44: A method for scattering charged particles onto a sample using a scattering column, the method comprising: emitting a beam of charged particles along a beam path using a charged particle source; adjusting the beam angle of the charged particle beam using a focusing lens disposed downstream of the charged particle source; allowing a portion of the charged particle beam to pass through using an aperture body disposed downstream of the focusing lens; and selectively operating the scattering column in a high-density mode for scattering charged particles onto a relatively small area of ​​the sample, and in a low-density mode for scattering charged particles onto a relatively large area of ​​the sample.

[0130] Clause 45: The method as described in Clause 44, wherein operating the diffuse column in high-density mode comprises: using a source lens to variably set the beam angle of the emitted charged particle beam, and / or using a condenser lens to collimate the charged particle beam, using a source lens to variably set the beam angle of the emitted charged particle beam, thereby adjusting the lateral extent of the collimated charged particle beam downstream of the condenser lens and upstream of the aperture body; and / or using an objective lens to adjust the focus of the charged particle beam such that the lateral extent of the beam spot is smaller than the lateral extent of the charged particle beam at the objective lens; and / or using a scanning electrode to scan the charged particle beam across the sample.

[0131] Clause 46: The method as described in Clause 44 or 45, wherein operating the diffuse column in low-density mode comprises: using a source lens to set the beam angle of the emitted charged particle beam, preferably such that the charged particle beam diverges upstream of the focusing lens; and / or using the focusing lens to focus the charged particle beam at an intersection downstream of the focusing lens and upstream of the aperture body, such that the charged particle beam diverges downstream of the aperture body; and / or using an objective lens to manipulate the charged particle beam such that the lateral extent of the beam spot is greater than the lateral extent of the charged particle beam at the objective lens.

[0132] Clause 47: A method for scattering charged particles onto a sample using a scattering column, the method comprising: emitting a charged particle beam along a beam path using a charged particle source; adjusting the beam angle of the charged particle beam using a focusing lens disposed downstream of the charged particle source; allowing a portion of the charged particle beam to pass through using an aperture body disposed downstream of the focusing lens; and focusing the charged particle beam onto a crossover point upstream of the sample using an objective lens such that the lateral extent of the charged particle beam at the sample is greater than the lateral extent of the charged particle beam at the objective lens.

[0133] The above description is intended to illustrate and not limit. Therefore, it will be apparent to those skilled in the art that modifications as described can be made without departing from the scope of the claims set forth below.

Claims

1. A charged particle device for projecting multiple beams of charged particles onto a sample, the charged particle device comprising: A primary column is configured to generate a primary beam directed toward the sample for evaluation of the sample; And a diffusion column for diffusion of charged particles from a sample, the diffusion column comprising: A charged particle source is configured to emit a beam of charged particles along the beam path. A source lens is arranged downstream of the charged particle source; A focusing lens is positioned downstream of the source lens; as well as An aperture body is disposed downstream of the focusing lens, wherein the aperture body is used to allow a portion of the charged particle beam to pass through; and The source lens is configured to be controlled to variably set the beam angle of the charged particle beam downstream of the source lens. Wherein the diffuse column is separate from the primary column, and the beam path is separate from the path of the primary beam, The diffuse column further includes a controller configured to selectively operate the diffuse column in a high-density mode and a low-density mode, the high-density mode being used for diffuse emission of charged particles over a first area of ​​the sample, and the low-density mode being used for diffuse emission of charged particles over a second area of ​​the sample, the second area being larger than the first area.

2. The charged particle device of claim 1, wherein the focusing lens of the diffuse column is configured to be controlled to collimate the charged particle beam, and The source lens is configured to be controlled to variably set the beam angle of the charged particle beam downstream of the source lens, thereby adjusting the lateral range of the collimated charged particle beam downstream of the focusing lens and upstream of the aperture body.

3. The charged particle device according to claim 1 or 2, wherein the focusing lens of the diffuse column is configured to be controlled to focus the charged particle beam at the intersection of the downstream of the focusing lens and the upstream of the aperture body, such that the charged particle beam diverges downstream of the aperture body.

4. The charged particle device of claim 1, wherein the diffuse column further comprises an objective lens disposed downstream of the aperture body.

5. The charged particle device of claim 4, wherein the objective lens is configured to be controlled to adjust the focus of the charged particle beam, thereby adjusting the lateral extent of the beam spot formed by the incident charge particle beam on the sample.

6. The charged particle device of claim 5, wherein the objective lens of the diffuse column is configured to be controlled to adjust the focus of the charged particle beam such that the lateral extent of the beam spot is smaller than the lateral extent of the charged particle beam at the objective lens.

7. The charged particle device of claim 5, wherein the objective lens of the diffuse column is configured to be controlled to manipulate the charged particle beam such that the lateral extent of the beam spot is greater than the lateral extent of the charged particle beam at the objective lens.

8. The charged particle device of claim 7, wherein the objective lens of the diffuse column is configured to be controlled to focus the charged particle beam at an intersection point upstream of the sample, such that the lateral extent of the beam spot is greater than the lateral extent of the charged particle beam at the objective lens.

9. The charged particle device according to any one of claims 5 to 7, wherein the diffuse column further comprises a pair of scanning electrodes disposed downstream of the aperture body.

10. The charged particle device of claim 9, wherein the pair of scanning electrodes is configured to be controlled to scan the charged particle beam across the sample.

11. The charged particle device of claim 9, wherein the pair of scanning electrodes is configured to be controlled so as not to manipulate the charged particle beam.

12. The charged particle device according to claim 9, wherein, In the high-density mode, at least one of the following is performed: The source lens is configured to be controlled to variably set the beam angle of the charged particle beam downstream of the source lens; The focusing lens is configured to be controlled to collimate the charged particle beam, and the source lens is configured to be controlled to variably set the beam angle of the charged particle beam downstream of the source lens, thereby adjusting the lateral range of the collimated charged particle beam downstream of the focusing lens and upstream of the aperture body; and The pair of scanning electrodes are configured to be controlled to scan the charged particle beam across the sample.

13. The charged particle device according to claim 9, wherein, In the high-density mode, the objective lens is configured to be controlled to adjust the focus of the charged particle beam such that the lateral extent of the beam spot is smaller than the lateral extent of the charged particle beam at the objective lens.

14. The charged particle device according to claim 9, wherein, In the low-density mode, at least one of the following is performed: The source lens is configured to be controlled to set the beam angle of the charged particle beam downstream of the source lens; The focusing lens is configured to be controlled to focus the charged particle beam at the intersection of the downstream of the focusing lens and the upstream of the aperture body, such that the charged particle beam diverges downstream of the aperture body. The objective lens is configured to be controlled to manipulate the charged particle beam such that the lateral extent of the beam spot is greater than the lateral extent of the charged particle beam at the objective lens. The pair of scanning electrodes are configured to be controlled so as not to manipulate the charged particle beam; as well as The source lens is configured to be controlled such that the charged particle beam diverges upstream of the focusing lens.

15. A diffusion column for diffusion of charged particles onto a sample, the diffusion column comprising: The charged particle source is configured to emit a beam of charged particles along the beam path; A source lens is arranged downstream of the charged particle source; A focusing lens is positioned downstream of the source lens; as well as An aperture body is arranged downstream of the source lens, wherein the aperture body is used to allow a portion of the charged particle beam to pass through; as well as The controller is configured to selectively operate the diffusion column in a high-density mode and a low-density mode, the high-density mode being used for diffusion of charged particles over a first area of ​​the sample, and the low-density mode being used for diffusion of charged particles over a second area of ​​the sample, the second area being larger than the first area. The diffuse column is separate from the primary column, which is configured to generate a primary beam directed toward the sample for evaluation of the sample. The beam path is separate from the path of the primary beam.

16. The radiating column according to claim 15, wherein, In the high-density mode, at least one of the following is performed: The source lens is configured to be controlled to variably set the beam angle of the charged particle beam downstream of the source lens; The focusing lens is configured to be controlled to collimate the charged particle beam, and the source lens is configured to be controlled to variably set the beam angle of the charged particle beam downstream of the source lens, thereby adjusting the lateral range of the collimated charged particle beam downstream of the focusing lens and upstream of the aperture body. The objective lens of the diffuse column is configured to be controlled to adjust the focus of the charged particle beam such that the lateral extent of the beam spot formed by the incident charged particle beam on the sample is smaller than the lateral extent of the charged particle beam at the objective lens; and A pair of scanning electrodes of the diffuse column are configured to be controlled to scan the charged particle beam across the sample.

17. The radiating column according to claim 16, wherein, In the low-density mode, at least one of the following is performed: The source lens is configured to be controlled to set the beam angle of the charged particle beam downstream of the source lens; The focusing lens is configured to be controlled to focus the charged particle beam at the intersection of the downstream of the focusing lens and the upstream of the aperture body, such that the charged particle beam diverges downstream of the aperture body. The objective lens is configured to be controlled to manipulate the charged particle beam such that the lateral extent of the beam spot is greater than the lateral extent of the charged particle beam at the objective lens. The pair of scanning electrodes are configured to be controlled so as not to manipulate the charged particle beam; as well as The source lens is configured to be controlled such that the charged particle beam diverges upstream of the focusing lens.

18. A diffusion column for diffusion of charged particles onto a sample, the diffusion column comprising: The charged particle source is configured to emit a beam of charged particles along the beam path; A focusing lens is positioned downstream of the charged particle source; as well as An aperture body is arranged downstream of the focusing lens, wherein the aperture body is used to allow a portion of the charged particle beam to pass through; An objective lens is disposed downstream of the aperture body; and wherein the objective lens is configured to be controlled to focus the charged particle beam at an intersection point upstream of the sample, such that the lateral extent of the charged particle beam at the sample is greater than the lateral extent of the charged particle beam at the objective lens. The diffuse column is separate from the primary column, which is configured to generate a primary beam directed toward the sample for evaluation of the sample. The beam path is separated from the path of the primary beam. The diffuse column further includes a controller configured to selectively operate the diffuse column in a high-density mode and a low-density mode, the high-density mode being used for diffuse emission of charged particles over a first area of ​​the sample, and the low-density mode being used for diffuse emission of charged particles over a second area of ​​the sample, the second area being larger than the first area.

19. The diffuser of claim 18, further comprising a source lens disposed downstream of the charged particle source and upstream of the focusing lens, wherein the source lens is configured to be controlled to variably set the beam angle of the charged particle beam downstream of the source lens.

20. The diffuser column of claim 19, wherein the focusing lens is configured to be controlled to collimate the charged particle beam, and wherein the source lens is configured to be controlled to variably set the beam angle of the charged particle beam downstream of the source lens, thereby adjusting the lateral range of the collimated charged particle beam downstream of the focusing lens and upstream of the aperture body.

21. The diffuser column of claim 18 or 19, wherein the focusing lens is configured to be controlled to focus the charged particle beam at an intersection downstream of the focusing lens and upstream of the aperture body, such that the charged particle beam diverges downstream of the aperture body.

22. The diffuse column of claim 18 or 19, wherein the objective lens is configured to be controlled to adjust the focus of the charged particle beam such that the lateral extent of the beam spot formed by the incident charge particle beam on the sample is smaller than the lateral extent of the charge particle beam at the objective lens.

23. The diffuse column of claim 19 further includes a pair of scanning electrodes disposed downstream of the aperture body.

24. The diffuse column of claim 23, wherein the pair of scanning electrodes are configured to be controlled to scan the charged particle beam across the sample.

25. The diffuse column of claim 23, wherein the pair of scanning electrodes is configured to be controlled so as not to manipulate the charged particle beam.

26. The radiating column according to claim 23, wherein, In the high-density mode, at least one of the following is performed: The source lens is configured to be controlled to variably set the beam angle of the charged particle beam downstream of the source lens; The focusing lens is configured to be controlled to collimate the charged particle beam, and the source lens is configured to be controlled to variably set the beam angle of the charged particle beam downstream of the source lens, thereby adjusting the lateral range of the collimated charged particle beam downstream of the focusing lens and upstream of the aperture body. The objective lens is configured to be controlled to adjust the focus of the charged particle beam such that the lateral extent of the beam spot formed by the incident charged particle beam on the sample is smaller than the lateral extent of the charged particle beam at the objective lens; and The pair of scanning electrodes are configured to be controlled to scan the charged particle beam across the sample.

27. The radiative column according to claim 23 or 26, wherein, In the low-density mode, at least one of the following is performed: The source lens is configured to be controlled to set the beam angle of the charged particle beam downstream of the source lens; The focusing lens is configured to be controlled to focus the charged particle beam at the intersection of the downstream of the focusing lens and the upstream of the aperture body, such that the charged particle beam diverges downstream of the aperture body. The objective lens is configured to be controlled to manipulate the charged particle beam such that the lateral extent of the beam spot formed by the incident charge particle beam on the sample is greater than the lateral extent of the charge particle beam at the objective lens. The pair of scanning electrodes are configured to be controlled so as not to manipulate the charged particle beam; as well as The source lens is configured to be controlled such that the charged particle beam diverges upstream of the focusing lens.

28. A charged particle tool for projecting a multi-beam of charged particles onto a sample, said charged particle tool comprising a diffuse column according to any one of claims 15 to 27.

29. The charged particle tool of claim 28 further includes a primary column configured to generate a primary charged particle beam directed toward the sample for examination of the sample.

30. The charged particle tool of claim 29, wherein the primary column comprises a primary charged particle source configured to emit a charged particle beam having a similar landing energy to the charged particle beam of the diffuse column.

31. The charged particle tool of claim 30, further comprising a sample support configured to support the sample, the sample support being configured to be subjected to the same voltage when the sample is configured to be in the beam path of the charged particle source of the diffuse column and when it is in the path of the beam path of the primary charged particle beam.

32. The charged particle tool of claim 31, further comprising a movable stage configured to move the sample support between a diffuse position when the sample is in the beam path of the charged particle beam of the diffuse column and an evaluation position when the sample is in the beam path of the primary charged particle beam, the diffuse position being spaced apart from the inspection position and / or the beam path of the primary charged particle beam being spaced apart from the beam path of the charged particle beam of the diffuse column.

33. A method for diffusing charged particles onto a sample, the charged particle diffusing using a diffusing column included in a charged particle device, the method comprising: Using a charged particle source, a beam of charged particles is emitted along the beam path; The beam angle of the emitted charged particle beam can be variably set using a source lens arranged downstream of the charged particle source. The beam angle of the charged particle beam is adjusted using a focusing lens positioned downstream of the source lens; and A portion of the charged particle beam is allowed to pass through using an aperture body positioned downstream of the focusing lens. The diffuse column is separate from the primary column in the charged particle device, the primary column being configured to generate a primary beam directed toward the sample for evaluation of the sample. The beam path is separated from the path of the primary beam. The method further includes selectively operating the diffraction column in a high-density mode and a low-density mode, the high-density mode being used for diffraction of charged particles over a first area of ​​the sample, and the low-density mode being used for diffraction of charged particles over a second area of ​​the sample, the second area being larger than the first area.

34. The method of claim 33, wherein adjusting the beam angle of the charged particle beam using the focusing lens comprises: The charged particle beam is collimated; and the beam angle of the charged particle beam downstream of the source lens is variably set, adjusting the lateral range of the collimated charged particle beam downstream of the focusing lens and upstream of the aperture body.

35. The method of claim 33, further comprising: The charged particle beam is focused at the intersection of the downstream of the focusing lens and the upstream of the aperture body, causing the charged particle beam to diverge downstream of the aperture body.

36. The method of claim 33, further comprising: Using an objective lens positioned downstream of the aperture body, the focus of the charged particle beam is adjusted, thereby adjusting the lateral extent of the beam spot formed by the incident charge particle beam on the sample.

37. The method of claim 36, wherein adjusting the focus of the charged particle beam using the objective lens comprises: The focal point of the charged particle beam is adjusted so that the lateral range of the beam spot is smaller than the lateral range of the charged particle beam at the objective lens.

38. The method of claim 36, wherein adjusting the focus of the charged particle beam using the objective lens comprises: The charged particle beam is manipulated such that the lateral extent of the beam spot is greater than the lateral extent of the charged particle beam at the objective lens.

39. The method of claim 36, wherein adjusting the focus of the charged particle beam using the objective lens comprises: The charged particle beam is focused at the intersection point upstream of the sample, such that the lateral range of the beam spot is greater than the lateral range of the charged particle beam at the objective lens.

40. The method of claim 36, further comprising: The charged particle beam is scanned across the sample using a pair of scanning electrodes positioned downstream of the aperture body.

41. The method of claim 40, wherein operating the diffuse column in the high-density mode comprises at least one of the following: The source lens can be used to variably set the beam angle of the emitted charged particle beam; The charged particle beam is collimated using the focusing lens, and the beam angle of the emitted charged particle beam is variably set using the source lens, thereby adjusting the lateral range of the collimated charged particle beam downstream of the focusing lens and upstream of the aperture body. The objective lens is used to adjust the focus of the charged particle beam so that the lateral range of the beam spot is smaller than the lateral range of the charged particle beam at the objective lens; and The charged particle beam is scanned across the sample using the pair of scanning electrodes.

42. The method of claim 40 or 41, wherein operating the diffuse column in the low-density mode comprises at least one of the following: The source lens is used to set the beam angle of the emitted charged particle beam, so that the charged particle beam diverges upstream of the focusing lens. The charged particle beam is focused at the intersection of the downstream of the focusing lens and the upstream of the aperture body using the focusing lens, causing the charged particle beam to diverge downstream of the aperture body; and The charged particle beam is manipulated using the objective lens such that the lateral extent of the beam spot is greater than the lateral extent of the charged particle beam at the objective lens.

43. A method for diffusing charged particles onto a sample using a diffraction column, the method comprising: Using a charged particle source, a beam of charged particles is emitted along the beam path; The beam angle of the charged particle beam is adjusted using a focusing lens positioned downstream of the charged particle source. A portion of the charged particle beam is allowed to pass through using an aperture body positioned downstream of the focusing lens; and The diffusion column is selectively operated in a high-density mode and a low-density mode. The high-density mode is used for diffusion of charged particles over a first area of ​​the sample, and the low-density mode is used for diffusion of charged particles over a second area of ​​the sample, which is larger than the first area. The diffuse column is separate from the primary column, which is configured to generate a primary beam directed toward the sample for evaluation of the sample. The beam path is separate from the path of the primary beam.

44. The method of claim 43, wherein operating the diffuse column in the high-density mode comprises at least one of the following: The beam angle of the emitted charged particle beam can be variably set using a source lens; The charged particle beam is collimated using the focusing lens, and the beam angle of the emitted charged particle beam is variably set using the source lens, thereby adjusting the lateral range of the collimated charged particle beam downstream of the focusing lens and upstream of the aperture body. The focus of the charged particle beam is adjusted using the objective lens such that the lateral extent of the beam spot formed by the incident charged particle beam on the sample is smaller than the lateral extent of the charged particle beam at the objective lens; and The charged particle beam is scanned across the sample using a scanning electrode.

45. The method of claim 44, wherein operating the diffuse column in the low-density mode comprises at least one of the following: The source lens is used to set the beam angle of the emitted charged particle beam, so that the charged particle beam diverges upstream of the focusing lens. The charged particle beam is focused at the intersection of the downstream of the focusing lens and the upstream of the aperture body using the focusing lens, causing the charged particle beam to diverge downstream of the aperture body; and The charged particle beam is manipulated using the objective lens such that the lateral extent of the beam spot is greater than the lateral extent of the charged particle beam at the objective lens.

46. ​​A method for diffusing charged particles onto a sample using a diffraction column, the method comprising: Using a charged particle source, a beam of charged particles is emitted along the beam path; The beam angle of the charged particle beam is adjusted using a focusing lens positioned downstream of the charged particle source. A portion of the charged particle beam is allowed to pass through using an aperture body positioned downstream of the focusing lens; as well as Using an objective lens, the charged particle beam is focused at the intersection point upstream of the sample, such that the lateral extent of the charged particle beam at the sample is greater than the lateral extent of the charged particle beam at the objective lens. The diffuse column is separate from the primary column, which is configured to generate a primary beam directed toward the sample for evaluation of the sample. The beam path is separated from the path of the primary beam. The method further includes selectively operating the diffraction column in a high-density mode and a low-density mode, the high-density mode being used for diffraction of charged particles over a first area of ​​the sample, and the low-density mode being used for diffraction of charged particles over a second area of ​​the sample, the second area being larger than the first area.

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