Apparatus and method for processing a solid structure

Abstract

The present invention relates to a solid structure processing device and a processing method for performing a processing procedure on a solid structure. The solid structure processing device of the present invention provides energy to the solid structure by using a plurality of electromagnetic radiation sources, so as to cause the solid structure to generate a quality change or a defect, i.e. to form a modified layer. The stress and / or hardness of the modified layer are different from those of other non-processing regions.

Description

Technical Field

[0001] This invention relates to a processing apparatus and a processing method, and more particularly to a processing apparatus and a processing method for solid structures. Background Technology

[0002] In recent years, the rapid development of semiconductor technology has enabled significant advancements in technological products. In semiconductor manufacturing processes, processing elements are frequently used to cut, grind, or polish materials such as wafers. Semiconductor materials, such as silicon carbide (SiC), possess advantages such as a wide bandgap, high hardness, high thermal conductivity, and chemical inertness, making them ideal materials for fabricating high-temperature electronic components and high-frequency, high-power devices. However, the high hardness of semiconductor materials makes them difficult to cut, grind, or polish, and can also cause wear on processing tools. Therefore, improving the processing efficiency and quality of semiconductor materials through modification is currently a crucial research topic. Summary of the Invention

[0003] In view of this, one or more objectives of the present invention are to provide a processing apparatus and method for solid structures to solve the problems of the prior art.

[0004] To achieve one or more of the aforementioned objectives, the present invention provides a solid structure processing apparatus, comprising at least: a laser source for providing laser energy to a processing target area of ​​the solid structure in a modification step of the processing procedure; and a microwave or radio frequency source for providing microwave or radio frequency energy to the solid structure in the modification step of the processing procedure, wherein the processing target area of ​​the solid structure undergoes a qualitative change or defect in the modification step of the processing procedure by means of the laser energy and the microwave or radio frequency energy, thereby forming a modified layer.

[0005] It also includes a heat source for heating the solid structure during the modification step of the processing procedure.

[0006] The heat source is the laser source, the microwave or radio frequency source, a heated liquid tank, another laser source, another microwave or radio frequency source, and / or an infrared light source.

[0007] The solid structure is immersed in a liquid.

[0008] It further includes a detection and control unit for detecting the formation state of the modified layer of the solid structure in a detection and control step of the processing procedure, and then feeding back control of the laser energy provided by the laser source and / or feeding back control of the microwave or radio frequency energy provided by the microwave or radio frequency source.

[0009] The laser source adjusts the laser energy accordingly based on the microwave or radio frequency energy provided by the microwave or radio frequency source.

[0010] The microwave or radio frequency source adjusts the microwave or radio frequency energy supplied according to the laser energy provided by the laser source.

[0011] The laser source provides laser energy by generating a pulse of light, while the microwave or radio frequency source provides microwave or radio frequency energy by continuously or intermittently generating an electromagnetic wave.

[0012] The laser source and the microwave or radio frequency source sequentially or simultaneously provide laser energy and microwave or radio frequency energy respectively, so as to form the modified layer in the processing target area of ​​the solid structure.

[0013] In this process, the laser source adjusts the focal point of a pulse of light generated by the laser source to irradiate a depth of the solid structure according to the shape of the solid structure.

[0014] The laser source uses one or more pulses of light to form multiple focal points to irradiate the processing target area of ​​the solid structure.

[0015] The laser source irradiates the processing target area of ​​the solid structure with multiple pulses of light of different wavelengths.

[0016] The direction in which the microwave or radio frequency source provides microwave or radio frequency energy to the solid structure is the same as the direction in which the laser source provides laser energy to the solid structure.

[0017] The direction in which the microwave or radio frequency source provides microwave or radio frequency energy to the solid structure is different from the direction in which the laser source provides laser energy to the solid structure.

[0018] To achieve one or more of the aforementioned objectives, the present invention provides a method for processing a solid structure, which includes a processing procedure comprising the following steps: performing a modification step, wherein the modification step comprises: providing laser energy to a processing target area of ​​the solid structure using a laser source; and providing microwave or radio frequency energy to the solid structure using a microwave or radio frequency source, wherein the processing target area of ​​the solid structure undergoes a qualitative change or defect through the laser energy and the microwave or radio frequency energy, thereby forming a modified layer.

[0019] The modification step may include a heating step, which uses a heat source to heat the solid structure.

[0020] During the processing procedure, the hardness or stress of the modified layer of the solid structure differs from that of other areas of the solid structure.

[0021] The modification step includes a subsequent step on the solid structure, which is selected from the group consisting of segmentation, thinning, polishing, coating, vapor deposition, photolithography, lithography, etching and diffusion.

[0022] The processing target area is located at one depth or on one surface of the solid structure.

[0023] The processing target area is located in a portion of the solid structure.

[0024] The laser source adjusts the laser energy provided to the processing target area according to the microwave or radio frequency energy provided by the microwave or radio frequency source, or the microwave or radio frequency source adjusts the microwave or radio frequency energy provided to the processing target area according to the laser energy provided by the laser source.

[0025] As described above, the solid structure processing apparatus and processing method of the present invention may have one or more of the following advantages:

[0026] (1) In the modification step, the present invention uses a variety of electromagnetic radiation sources to cause qualitative changes or defects in the processing target area of ​​the solid structure, thereby creating stress differences between it and other areas.

[0027] (2) In the modification step, this invention utilizes pulsed light from a laser source to create hot spots in the processing target area of ​​the solid structure, causing qualitative changes or defects such as weakening of atomic bonds, structural weakening, or transformation from a single crystal state to a polycrystalline or amorphous state in the processing target area of ​​the solid structure. Simultaneously, this invention utilizes a microwave or radio frequency source to provide microwave or radio frequency energy to the solid structure during the modification step. The processing target area of ​​the solid structure generates free electrons due to the laser energy. These free electrons can absorb more microwave energy compared to other areas (non-processing target areas), thus increasing the temperature of the processing target area. The increased temperature further helps the processing target area absorb more laser energy to generate more free electrons, thereby absorbing more electromagnetic energy provided by the microwave or radio frequency radiation source, thus forming a positive cycle.

[0028] (3) In the modification step, the present invention heats the solid structure with a heat source, which can increase the temperature of the solid structure and increase the absorption rate of radiation source energy by increasing the temperature.

[0029] (4) In the detection and control step, the present invention detects the formation state of the modified layer of the solid structure, and then feeds back the laser energy provided by the laser source and / or feeds back the microwave or radio frequency energy provided by the microwave or radio frequency source, such as controlling the magnitude, frequency or processing feed speed of the microwave or radio frequency energy provided by the microwave or radio frequency source.

[0030] To enable you to have a better understanding of the technical features and effects of this invention, preferred embodiments and detailed descriptions are provided below. Attached Figure Description

[0031] Figure 1 This is a schematic diagram of the processing procedure executed by the solid structure processing method of the present invention.

[0032] Figure 2 This is a schematic diagram of the first embodiment of the modification step in the processing apparatus for the solid structure of the present invention.

[0033] Figure 3 This is a schematic diagram of a second embodiment of the modification step in the processing apparatus for the solid structure of the present invention.

[0034] Figure 4 This is a schematic diagram of the third embodiment of the modification step in the processing apparatus for the solid structure of the present invention.

[0035] Figure 5 This is a schematic diagram of the output frequencies of laser energy and microwave (or radio frequency) energy in this invention.

[0036] Figure 6 This is a schematic diagram illustrating the detection of the formation state of the modified layer using a detection and control unit in this invention.

[0037] Figure 7 This is a schematic diagram of the solid structure processing apparatus of the present invention performing a heating step in a heated liquid tank.

[0038] Figure 8 For the reason Figure 4 A schematic diagram obtained from another perspective.

[0039] Figure 9a and Figure 9b The images show a top view and a cross-sectional side view of the solid structure of the present invention, where a single processing target area is located in a portion of the region. Figure 9c and Figure 9d The images are a top view and a cross-sectional side view of the solid structure of the present invention, showing that multiple processing target areas are located in a portion of the area.

[0040] Explanation of reference numerals in the attached figures:

[0041] S10: Modification Steps

[0042] S40: Detection and Control Procedures

[0043] S50: Heating Step

[0044] S60: Next Steps

[0045] 20: Laser source

[0046] 22: Laser Generator

[0047] 23: Pulsed light

[0048] 24: Lens Group

[0049] 30: Microwave or radio frequency source

[0050] 32: Microwave generator

[0051] 33: Microwave

[0052] 34: Coaxial resonant cavity

[0053] 35: Opening

[0054] 36: Isolator

[0055] 38: Matcher

[0056] 38a: Coaxial tube

[0057] 38b: Metal plate

[0058] 38c: Metal rod

[0059] 40: Absorption element

[0060] 70: Heat source

[0061] 80: Heated liquid tank

[0062] 82: Oil

[0063] 90: Detection and Control Unit

[0064] 92: Temperature sensor

[0065] 100: Solid structure

[0066] 110: Processing target area

[0067] 120: Modified layer

[0068] 150: Platform

[0069] X: Depth

[0070] L1: Horizontal double arrow

[0071] L2: Vertical double arrow

[0072] C1: Horizontal double arrow

[0073] C2: Vertical double arrow

[0074] I-I', II-II': Section lines Detailed Implementation

[0075] To facilitate understanding of the technical features, content, advantages, and effects of this invention, the invention is described in detail below with reference to accompanying drawings and embodiments. The drawings used are for illustrative purposes only and do not necessarily represent the actual scale and precise configuration of the invention in practice. Therefore, the scale and configuration of the accompanying drawings should not be used to interpret or limit the scope of the invention in actual implementation. Furthermore, for ease of understanding, the same elements in the following embodiments are indicated by the same symbols.

[0076] Furthermore, unless otherwise specified, the terms used throughout this specification and claims generally have their ordinary meaning in the context of this art, the disclosure herein, and the specific content. Certain terms used to describe the invention will be discussed below or elsewhere in this specification to provide additional guidance to those skilled in the art in describing the invention.

[0077] The use of terms such as "first," "second," and "third" in this document does not specifically refer to any order or sequence, nor is it intended to limit the invention. Rather, it is merely used to distinguish components or operations described using the same technical terms.

[0078] Secondly, when this article uses terms such as "contains", "includes", "has", or "contains", these are all open-ended terms, meaning that they include but are not limited to.

[0079] This invention provides a processing apparatus and method for solid structures. This apparatus and method are used to process a solid structure (i.e., a workpiece) and are applicable to many semiconductor processes, such as, but not limited to, SOI (Semiconductor on Insulator) processes, slicing processes, wafer thinning processes, or packaging processes. The solid structure described above is, for example, but not limited to, a solid object containing semiconductor materials in the aforementioned semiconductor processes, such as a wafer or ingot, or other crystal structure. The semiconductor material described above is, for example, but not limited to, substrate materials such as Si, SiC, SiGe, Ge, GaAs, GaN, or InP, and the crystal structure is, for example, but not limited to, a single crystal, polycrystalline, or amorphous structure. The processing procedure of the processing method of this invention includes at least a modification step to form a modification layer on a processing target area of ​​the aforementioned solid structure.

[0080] Please see Figure 1As shown, in the modification step S10 of the processing procedure of the present invention, the solid structure processing apparatus of the present invention provides various electromagnetic energies to the processing target area of ​​the solid structure using multiple electromagnetic radiation sources. These electromagnetic energies serve as modification energy, thereby causing a qualitative change or defect in the processing target area of ​​the solid structure, i.e., forming a modified layer. For example, the present invention can use two electromagnetic radiation sources to provide two different electromagnetic energies to the processing target area of ​​the solid structure, thereby causing a qualitative change or defect in the processing target area of ​​the solid structure and thus forming a modified layer.

[0081] Please see Figures 2 to 4 As shown, taking a solid structure 100 as an example of a wafer, the wafer is defined with a processing target area 110 located at a radial section or axial section of the wafer, and this radial or axial section may, for example, be located at any depth or on the surface of the wafer. The solid structure 100 is, for example, supported on a stage 150, which is, for example, but not limited to, a movable stage. Furthermore, the processing procedure for the solid structure 100 is not limited to a heated liquid bath 80 (such as...). Figure 7 (as shown) in chambers or not in heated liquid tanks (such as...) Figure 6 The process is carried out in a chamber. The first electromagnetic radiation source of the two types of electromagnetic radiation sources provides a first type of electromagnetic energy to the processing target area 110 of the solid structure 100, thereby causing a qualitative change or defect in the solid structure 100 of the processing target area 110, such as weakening of atomic bonds, structural weakening, or transformation from a single crystal state to a polycrystalline or amorphous state, that is, forming a modified layer 120. The thickness of the solid structure 100 is, for example, but not limited to, between about 50 μm and about 1,800 μm. The processing target area 110 is, for example, located at a depth X or on a surface of the solid structure 100. The area, thickness, distribution direction, and distribution pattern of the modified layer 120 formed by the present invention are not particularly limited in the solid structure 100; for example, they can be determined according to actual process requirements. If the solid structure 100 is a crystal ingot, its thickness range is, for example, but not limited to, greater than 800 μm.

[0082] The first electromagnetic radiation source used in this invention is, for example, a laser source 20, which generates pulsed light with laser energy in the modification step S10 of the above-mentioned processing procedure to irradiate the processing target area 110 of the solid structure 100. Taking the thickness of the solid structure 100 as 1,800 μm as an example, the depth X of the processing target area 110 can be between about 0 μm and about 1,800 μm. The laser source 20 generates a pulsed light 23 by means of a laser generator 22, and this pulsed light 23 is transmitted to the solid structure 100 through a lens group 24. Because the pulsed light 23 from laser source 20 creates a nonlinear absorption effect and generates a thermal effect at the focal point, forming a hot spot, the solid structure 100 at the focal point will be ionized, generating free electrons. The energy of these free electrons will also be transferred to the solid structure 100 at the focal point, increasing its temperature and thus increasing the absorption coefficient. This allows the solid structure to absorb more laser energy from laser source 20, thereby enhancing the modification effect. Therefore, when the focal point of the pulsed light 23 generated by laser source 20 is focused on the processing target area 110 of solid structure 100, laser energy is provided to this area, causing changes such as weakening of atomic bonds, structural weakening, or transformation from a single crystal state to a polycrystalline or amorphous state, or defects.

[0083] The second electromagnetic radiation source among the two electromagnetic radiation sources mentioned above provides a second type of electromagnetic energy to the processing target area 110 of the solid structure 100. The first electromagnetic energy provided by the first electromagnetic radiation source can generate free electrons in the processing target area 110 of the solid structure 100. The generation of free electrons helps to absorb the second electromagnetic energy provided by the second electromagnetic radiation source to increase the temperature of the processing target area 110. The increase in temperature helps the processing target area 110 absorb more of the first electromagnetic energy to generate more free electrons, thus absorbing more of the second electromagnetic energy provided by the second electromagnetic radiation source, thereby forming a positive cycle.

[0084] In this invention, the second electromagnetic radiation source is, for example, a microwave or radio frequency source 30, which continuously or intermittently generates an electromagnetic wave during the modification step S10 of the above-mentioned processing procedure to provide microwave or radio frequency energy to the solid structure 100. Taking the second electromagnetic radiation source as a microwave source as an example, the microwave or radio frequency source 30 generates microwaves 33 by means of a microwave generator 32 (such as a magnetron) and transmits them to the solid structure 100 via a coaxial resonator 34. Preferably, an isolator 36 is provided between the microwave generator 32 and the coaxial resonator 34, which can provide the effect of unidirectional microwave transmission. Preferably, a matching device 38 is also provided on the microwave transmission path (such as the coaxial resonator 34), which can reduce the amount of microwave reflection, so that the microwave can effectively enter the coaxial resonator 34 and be transmitted to the solid structure 100. The matching unit 38 is, for example, composed of a coaxial tube 38a, a metal plate 38b, and a metal rod 38c. However, the above-described microwave or radio frequency source 30 structure is merely a preferred example and is not intended to limit the invention. Compared to ultraviolet or infrared light, the microwaves provided by the microwave source used in this invention can penetrate solid structures 100 such as wafers / ingots. Furthermore, the microwaves can cause vibrations in the bonds between atoms (e.g., silicon atoms) of the wafer / ingot. The reciprocating motion of these bonds generates internal frictional heat, simultaneously heating the material inside and outside the wafer / ingot, thus generating more free electrons. The wavelength of the microwaves is in the range of approximately 1 mm to approximately 1 m, and the frequency is in the range of approximately 300 GHz to approximately 0.3 GHz. The microwave output mode can be a continuous microwave source or an intermittent microwave source with a pulse width in the range of approximately 1 μs to approximately 1 ms. The laser energy provided by the laser source 20 and the microwave or radio frequency energy provided by the microwave or radio frequency source 30 can cause the solid structure 100 to undergo qualitative changes or defects in the processing target area 110, thereby forming a modified layer 120.

[0085] Furthermore, because the processing target area 110 of the solid structure 100 (i.e., the location of the modified layer 120) has more free electrons at the focal point of the pulsed light from the laser source 20 compared to other areas (non-processing target areas) of the solid structure 100, the generation of these free electrons allows for the absorption of more microwave energy compared to other areas (non-processing target areas), which can raise the temperature of the processing target area 110. This increased temperature, in turn, helps the processing target area 110 absorb more of the first type of electromagnetic energy to generate more free electrons, thus absorbing more of the second type of electromagnetic energy provided by the second electromagnetic radiation source, thereby forming a positive cycle. This results in a greater thermal difference compared to other non-processing target areas, corresponding to greater differences in properties such as stress and / or hardness, effectively modifying the processing target area 110 of the solid structure 100. The aforementioned temperature can be detected, for example, by a temperature sensor 92 (such as an infrared temperature sensor). During the modification step S10, the processing target area 110 of the solid structure 100 can absorb laser energy and microwave energy to generate a thermal effect, so the hardness of the processing target area 110 of the solid structure 100 can be lower than that of other non-processed target areas.

[0086] Furthermore, the direction in which the microwave or radio frequency source 30 of the present invention provides microwave or radio frequency electromagnetic waves with microwave or radio frequency energy is not particularly limited, and it can be from sources different from (e.g.) Figure 2 (as shown on the opposite side) the same as (e.g.) Figure 3 (as shown on the same side) or perpendicular to ... Figure 4 , Figure 8 (As shown) Laser source 20 provides laser energy to solid structure 100 in a direction that provides microwave or radio frequency electromagnetic waves. In this invention, dual microwave or radio frequency sources can also be used to provide microwave or radio frequency energy, such as... Figure 4 and Figure 8 As shown, two sets of microwave or radio frequency sources 30 share the same coaxial resonant cavity 34, which is respectively disposed on the left and right sides of the solid structure 100, providing microwave or radio frequency energy perpendicular to the direction in which the laser source 20 provides laser energy. Figure 4 and Figure 8The coaxial resonant cavity 34 shown may selectively have an opening 35, allowing the stage 150 to deliver the area to be processed on the solid structure 100 into the coaxial resonant cavity 34 via this opening 35. The coaxial resonant cavity 34 may be made of, for example, a transparent or opaque material. Furthermore, in addition to the aforementioned opposite side direction, same side direction, and perpendicular direction, the direction in which the microwave or radio frequency source 30 provides microwave or radio frequency energy and the direction in which the laser source provides laser energy may also form an angle, and this angle is in the range of approximately 0 degrees to approximately 180 degrees. Additionally, the direction in which the microwave or radio frequency source 30 provides microwave or radio frequency energy may be adjustable, for example, by adjusting the direction in which the microwave or radio frequency source 30 provides microwave or radio frequency energy and the direction in which the laser source provides laser energy, and / or the aforementioned angle, according to the surface morphology or composition of the solid structure 100.

[0087] Furthermore, the pulsed light provided by the laser source 20 can scan along, for example, the radial section or axial section to provide energy to the solid structure 100, and the direction of the qualitative change or defect formation of the solid structure 100 is parallel to the direction of the radial section or axial section. The scanning path of the pulsed light when scanning along the radial section or axial section is not particularly limited, as long as it can provide laser energy to the processing target area 110 of the solid structure 100, it can be applied to the present invention. Since microwave or radio frequency electromagnetic waves can penetrate the solid structure 100 such as wafer / ingot, the microwave or radio frequency source 30 can provide microwave or radio frequency electromagnetic waves from the direction parallel to the radial section or axial section, the direction perpendicular to the radial section or axial section, or other directions. For the solid structure 100, the processing target area 110 of the solid structure 100 that has undergone qualitative change or defect due to the energy provided by the laser source 20 will absorb more microwave or radio frequency energy than the non-processing target area 110. Regardless of the direction from which the microwave or radio frequency source 30 provides microwave or radio frequency electromagnetic waves, an absorption element 40 can be placed on the opposite side to avoid unnecessary scattering and improve the uniformity of absorption (e.g., Figure 2 (As shown). Since the arrangement and operating principle of the laser source 20 and the microwave or radio frequency source 30 are well known to those skilled in the art, they will not be described in detail here.

[0088] The power of the microwave or radio frequency source 30 of the present invention is, for example, in the range of about 200 watts to about 5,000 watts, and the laser energy output by the laser source 20 of the present invention is not limited to being higher, lower, or equal to the microwave or radio frequency energy output by the microwave or radio frequency source 30. The laser source 20 of the present invention, for example, but not limited to, can adjust the laser energy provided by the modified processing target region 110 according to the microwave or radio frequency energy provided by the microwave or radio frequency source 30, and the microwave or radio frequency source 30, for example, but not limited to, can adjust the microwave or radio frequency energy provided by the processing target region 110 of the heated solid structure 100 according to the laser energy provided by the laser source 20. Anything that can form a modified layer 120 on the processing target region 110 of the solid structure 100 is applicable to the present invention. Based on the aforementioned positive feedback loop effect, for example, when the microwave or radio frequency source 30 increases the microwave or radio frequency energy supplied to the processing target area 110 of the solid-state structure 100, the laser source 20 can correspondingly reduce the laser energy supplied to the processing target area 110 of the solid-state structure 100. Alternatively, when the laser source 20 fixes the laser energy supplied to the processing target area 110 of the solid-state structure 100, the microwave or radio frequency source 30 reduces or increases the microwave or radio frequency energy supplied to the processing target area 110 of the solid-state structure 100, achieving the aforementioned positive feedback loop effect.

[0089] Furthermore, the laser source 20 of this invention provides laser energy by generating a pulsed light, while the microwave or radio frequency source 30 provides microwave or radio frequency energy by continuously or intermittently generating an electromagnetic wave. Thus, the laser source 20 and the microwave or radio frequency source 30 of this invention can sequentially or simultaneously output pulsed light and microwave or radio frequency electromagnetic waves to provide laser energy and microwave or radio frequency energy, respectively, thereby forming a modified layer 120 in the processing target area 110 of the solid structure 100. Figure 5 This is a schematic diagram illustrating the output frequencies of laser energy and microwave (or radio frequency) energy in this invention. Figure 5 As shown, laser source 20 provides laser energy using pulsed light, while microwave or radio frequency source 30 can continuously generate microwave or radio frequency electromagnetic waves to provide microwave or radio frequency energy (e.g., Figure 5 (a), (b) and (c) in the text), or microwave or radio frequency source 30 can also intermittently generate microwave or radio frequency electromagnetic waves to provide microwave or radio frequency energy (e.g. Figure 5 (d), (e), (f), (g), and (h)). Figure 5 The horizontal axis T represents time, and the vertical axis E represents pulse energy (E), which is used to represent the output frequency, not the actual energy magnitude.

[0090] Continuing, taking the intermittent generation of microwave or radio frequency electromagnetic waves by the microwave or radio frequency source 30 as an example, in terms of the turn-on time, the microwave or radio frequency source 30 can be turned on before the laser source 20 outputs pulsed light and turned off after the pulsed light is turned off. Alternatively, the microwave or radio frequency source 30 can be turned on simultaneously with the laser source 20 outputting pulsed light and turned off after the pulsed light is turned off. Or, the microwave or radio frequency source 30 can be turned on simultaneously with the laser source 20 outputting pulsed light and turned off after the pulsed light is turned off. In terms of the output frequency, the microwave or radio frequency electromagnetic waves output by the microwave or radio frequency source 30 can, for example, have the same frequency as the pulsed light output by the laser source 20 and provide the same duration. Alternatively, the microwave or radio frequency electromagnetic waves output by the microwave or radio frequency source 30 can, for example, have the same frequency as the pulsed light output by the laser source 20 and provide a duration longer than the laser pulse width, for example, n times longer, where n can, for example, be a positive integer or a decimal. In addition, taking the continuous generation of microwave or radio frequency electromagnetic waves by microwave or radio frequency source 30 as an example, in terms of output frequency, the microwave or radio frequency electromagnetic waves output by microwave or radio frequency source 30 may, for example, have a different frequency than the pulse light output by laser source 20, and the output frequency of the microwave or radio frequency electromagnetic waves may be lower or higher than the pulse light output frequency. Alternatively, the microwave or radio frequency electromagnetic waves output by microwave or radio frequency source 30 may, for example, have a different frequency than the pulse light output by laser source 20, and the output frequency of the microwave or radio frequency electromagnetic waves may be n times the pulse light output frequency of the laser, where n may, for example, be a positive integer or a decimal.

[0091] The laser source 20 used in this invention is, for example, an Nd:YAG pulsed laser, an Nd:YVO4 pulsed laser, or a Ti-Sapphire pulsed laser. The pulsed light generated by the laser source 20 scans and irradiates the processing target area 110 of the solid structure 100, thereby making the defect density range from about 100ea / mm2 to about 1,000,000ea / mm2, wherein the pulse light velocity ranges from about 10mm / sec to about 1,000mm / sec, the pulse light wavelength is greater than about 700nm, preferably from about 700nm to about 1,600nm, the pulse width is less than about 1,000ns, the repetition frequency ranges from about 5kHz to about 10MHz, the pulse energy (E) ranges from about 0.1μJ to about 1,000μJ, and the spot diameter ranges from about 1μm to about 50μm. This invention can utilize a movable platform and a horizontally movable solid structure 100 (such as...) Figure 2 or Figure 3 (as shown by the horizontal double arrow C1) or a laser source 20 horizontally moving pulsed light (such as...) Figure 2 or Figure 4(As shown by the horizontal double arrow L1), thereby enabling the pulsed light to horizontally scan and irradiate the processing target area 110 of the solid structure 100. Furthermore, the present invention can also utilize, for example, a movable stage to vertically move the solid structure 100 (i.e., the laser source is longitudinally fixed, while the stage is longitudinally movable, such as...). Figure 2 or Figure 3 (As shown by the vertical double arrow C2 on the right) or a vertically moving pulsed light source 20 (i.e., the laser source 20 is vertically movable, while the stage is vertically fixed, such as...). Figure 2 or Figure 4 As shown by the vertical double arrow L2, the pulsed light vertically scans and irradiates the processing target area 110 of the solid structure 100. In other words, the present invention can selectively adjust the depth of the focal point of the pulsed light generated by the laser source 20 irradiating the solid structure 100 according to the shape (e.g., shape) of the solid structure 100 during the processing procedure to achieve a better modification effect. In addition, if the cross-section of the solid structure 100 is warped, the present invention can adjust the focal point to form a modification layer 120 of uniform thickness on the surface or at depth X of the solid structure 100 along the warped shape. The laser source of the present invention can, for example, form a single focal point to irradiate the solid structure 100 with a single pulsed light. Moreover, the present invention can also, for example, form multiple focal points to irradiate the solid structure 100 with a single pulsed light, or for example, form multiple focal points or a single focal point to irradiate the solid structure 100 with multiple pulsed light. Among them, the multiple pulsed light can have the same wavelength or different wavelengths, so as to be applicable to different semiconductor materials. For example, a laser source can contain pulsed light with two or more wavelengths, thus allowing the selection of a suitable laser source wavelength based on the different compositions of the solid structure. Furthermore, in other embodiments, the movement of the aforementioned movable stage is not limited to vertical or horizontal movement of the solid structure 100. The movable stage can also move the solid structure 100 by rotation, tilting, or other methods; that is, as long as the position of the pulsed light's focal point illuminating the solid structure 100 can be adjusted, it is applicable to this invention. Additionally, by adjusting the position of the pulsed light's focal point illuminating the solid structure 100, the processing target area 110 of the solid structure can be made not limited to being distributed throughout the entire area of ​​the solid structure, but for example, distributed only in a portion of the radial and / or longitudinal sections. For example, a processing target area 110 (see...) Figure 9a and Figure 9b ) or multiple processing target areas 110 (see Figure 9c and Figure 9d The area to be processed can be a portion of the solid structure 100, and the cross-sectional shape of the target area 110 is not particularly limited and can be determined according to actual needs. For example, it can be like... Figures 9a to 9d The land shown is U-shaped, in which Figure 9b for Figure 9a The side view of the section obtained along section line I-I', and Figure 9d for Figure 9c The side view of the section obtained along section line II-II'.

[0092] In addition, such as Figure 7 As shown, the processing apparatus of the present invention further includes, for example, a heat source 70 for performing a heating step S50, thereby heating the solid structure 100 during the modification step S10 of the above-mentioned processing procedure. The heat source 70 may be, for example, a laser source 20, a microwave or radio frequency source 30, a heating liquid tank 80, another laser source, another microwave or radio frequency source, and / or an infrared light source. Figure 7 The heating liquid tank 80 can also serve as the aforementioned heat source, and the solid structure 100 is exemplified by a wafer. Additionally, the laser source 20, microwave, or radio frequency source 30 can also serve as the heat source 70. The heating liquid tank 80 contains a liquid to immerse the solid structure 100 in the liquid. The heating liquid tank 80 can be, for example, a hot oil tank and contains an oil 82, preferably a hot oil, and more preferably a high-temperature resistant oil, such as fluorinated oil. In all or part of the above processing steps, the solid structure 100 can be immersed in the oil 82, thereby reducing unnecessary cracks or crack expansion caused by thermal shock and increasing thermal uniformity. Furthermore, the heating liquid tank 80 is not limited to the aforementioned oil 82; any heatable liquid can be selected as the heat source as needed.

[0093] In addition, the processing apparatus of the present invention further includes, for example, a detection and control unit 90 (see...) Figure 6 or Figure 7 This is used to detect the formation state of the modified layer 120 of the solid structure 100 in the detection and control step S40 of the processing procedure. For example, by detecting the amount of free electrons, it can determine the change in photoconductivity attenuation and the defect formation state, and then feed back and control the laser energy provided by the laser source 20 and / or feed back and control the microwave or radio frequency energy provided by the microwave or radio frequency source 30. For example, it can control the magnitude, frequency, or processing feed rate of the microwave or radio frequency energy provided by the microwave or radio frequency source 30 in real time. The detection and control step S40 can be performed simultaneously with the modification step S10, for example.

[0094] The processing procedure of the present invention may further include one or more subsequent steps S60. These subsequent steps S60 are, for example, selected from the group consisting of segmentation (separation), thinning, polishing, coating, vapor deposition, photolithography, microlithography, etching, and diffusion, but are not limited thereto. The subsequent step S60 may be performed, for example, after the modification step S10, or it may be performed after the heating step S50 following the modification step S10.

[0095] In summary, based on the foregoing description, the solid structure processing apparatus and processing method of the present invention may have one or more of the following advantages:

[0096] (1) In the modification step, the present invention uses a variety of electromagnetic radiation sources to cause qualitative changes or defects in the processing target area of ​​the solid structure, thereby creating stress differences between it and other areas.

[0097] (2) In the modification step, this invention utilizes pulsed light from a laser source to create hot spots in the processing target area of ​​the solid structure, causing qualitative changes or defects such as weakening of atomic bonds, structural weakening, or transformation from a single crystal state to a polycrystalline or amorphous state in the processing target area of ​​the solid structure. Simultaneously, this invention utilizes a microwave or radio frequency source to provide microwave or radio frequency energy to the solid structure during the modification step. The processing target area of ​​the solid structure generates free electrons due to the laser energy. These free electrons can absorb more microwave energy compared to other areas (non-processing target areas), thus increasing the temperature of the processing target area. The increased temperature further helps the processing target area absorb more laser energy to generate more free electrons, thereby absorbing more electromagnetic energy provided by the microwave or radio frequency radiation source, thus forming a positive cycle.

[0098] (3) In the modification step, the present invention heats the solid structure with a heat source, which can increase the temperature of the solid structure and increase the absorption rate of radiation source energy by increasing the temperature.

[0099] (4) In the detection and control step, the present invention detects the formation state of the modified layer of the solid structure, and then feeds back the laser energy provided by the laser source and / or feeds back the microwave or radio frequency energy provided by the microwave or radio frequency source, such as controlling the magnitude, frequency or processing feed speed of the microwave or radio frequency energy provided by the microwave or radio frequency source.

[0100] The above description is merely illustrative and not restrictive. Any equivalent modifications or alterations made without departing from the spirit and scope of this invention should be included in the appended claims.

Claims

1. A processing apparatus for solid structures, used to perform a processing procedure, characterized in that, At least includes: A laser source for providing laser energy to a processing target area of ​​the solid structure during a modification step in the processing procedure; and A microwave or radio frequency source is provided to provide microwave or radio frequency energy to the processing target area of ​​the solid structure during the modification step of the processing procedure. The microwave or radio frequency source includes a microwave or radio frequency generator, a coaxial resonant cavity, an isolator, and a matching device. A microwave or radio frequency electromagnetic wave generated by the microwave or radio frequency generator is transmitted to the processing target area of ​​the solid structure via the coaxial resonant cavity. The isolator provides unidirectional transmission of the microwave or radio frequency electromagnetic wave, and the matching device reduces the reflection of the microwave or radio frequency energy and allows the microwave or radio frequency energy to enter the coaxial resonant cavity. A detection and control unit is used to detect the amount of free electrons in the target processing area during the modification step of the processing procedure, and to control the microwave or radio frequency source in real time based on the detected amount of free electrons, so as to adjust the magnitude of the microwave or radio frequency energy provided by the microwave or radio frequency source, the frequency of the microwave or radio frequency energy, or the processing feed speed of the processing procedure. The microwave or radio frequency source provides microwave or radio frequency energy to the processing target area while the laser source provides laser energy to the processing target area; The amount of free electrons in the processing target area of ​​the solid structure increases by the laser energy. The increase in the amount of free electrons causes the processing target area to absorb the microwave or radio frequency energy and increase the temperature. The increase in temperature helps the processing target area absorb more laser energy to further increase the amount of free electrons. The further increase in the amount of free electrons causes the processing target area to absorb more microwave or radio frequency energy, thereby forming a positive cycle of laser energy and microwave or radio frequency energy, resulting in qualitative changes or defects and thus forming a modified layer.

2. The solid structure processing apparatus as described in claim 1, characterized in that, It also includes a heat source for heating the solid structure during the modification step of the processing procedure.

3. The solid structure processing apparatus as described in claim 2, characterized in that, The heat source is the laser source, the microwave or radio frequency source, a heated liquid tank, another laser source, another microwave or radio frequency source, and / or an infrared light source.

4. The solid structure processing apparatus as described in claim 1, 2, or 3, characterized in that, The solid structure is immersed in a liquid.

5. The solid structure processing apparatus as described in claim 1, characterized in that, The detection and control unit determines the photoconductivity attenuation and defect generation status of the processing target area based on the amount of free electrons.

6. The solid structure processing apparatus as described in claim 1, characterized in that, The laser source adjusts the laser energy accordingly based on the microwave or radio frequency energy provided by the microwave or radio frequency source.

7. The solid structure processing apparatus as described in claim 1, characterized in that, The microwave or radio frequency source is a dual microwave or radio frequency source, which has two sets of microwave or radio frequency sources. The two sets of microwave or radio frequency sources share the coaxial resonant cavity and are respectively located on opposite sides of the solid structure. The direction in which the two sets of microwave or radio frequency sources provide microwave or radio frequency energy to the processing target area is perpendicular to the direction in which the laser source provides laser energy to the processing target area.

8. The solid structure processing apparatus as described in claim 1, characterized in that, The laser source provides laser energy by generating a pulse of light, while the microwave or radio frequency source provides microwave or radio frequency energy by continuously or intermittently generating an electromagnetic wave.

9. The solid structure processing apparatus as described in claim 8, characterized in that, The microwave or radio frequency source provides microwave or radio frequency energy by intermittently generating the electromagnetic wave, and the microwave or radio frequency source is turned on before the laser source outputs the pulse light and turned off after the pulse light is turned off, or it is turned on simultaneously when the laser source outputs the pulse light and turned off after the pulse light is turned off.

10. The solid structure processing apparatus as described in claim 1, characterized in that, The laser source adjusts the focal point of a pulse of light generated by the laser source to a depth of the solid structure according to the shape of the solid structure.

11. The solid structure processing apparatus as described in claim 1, characterized in that, The laser source uses one or more pulses of light to form multiple focal points to irradiate the processing target area of ​​the solid structure.

12. The solid structure processing apparatus as described in claim 1, characterized in that, The laser source irradiates the processing target area of ​​the solid structure with multiple pulses of light of different wavelengths.

13. The solid structure processing apparatus as described in claim 1, characterized in that, The direction in which the microwave or radio frequency source provides microwave or radio frequency energy to the solid structure is the same as the direction in which the laser source provides laser energy to the solid structure.

14. The solid structure processing apparatus as described in claim 1, characterized in that, The direction in which the microwave or radio frequency source provides microwave or radio frequency energy to the solid structure is different from the direction in which the laser source provides laser energy to the solid structure.

15. A method for processing a solid structure, comprising a processing procedure, characterized in that, The processing procedure includes the following steps: A modification step is performed, wherein the modification step includes: providing laser energy to a processing target area of ​​the solid structure using a laser source; and providing microwave or radio frequency energy to the processing target area of ​​the solid structure using a microwave or radio frequency source, wherein the microwave or radio frequency source includes a microwave or radio frequency generator, a coaxial resonant cavity, an isolator and a matching device, a microwave or radio frequency electromagnetic wave generated by the microwave or radio frequency generator is transmitted to the processing target area of ​​the solid structure via the coaxial resonant cavity, and the isolator is used to provide a unidirectional transmission effect of the microwave or radio frequency electromagnetic wave, and the matching device is used to reduce the reflection of the microwave or radio frequency energy and allow the microwave or radio frequency energy to enter the coaxial resonant cavity; During the modification step, the amount of free electrons in the target processing area is detected, and the microwave or radio frequency source is controlled in real time based on the detected amount of free electrons to adjust the magnitude of the microwave or radio frequency energy provided by the microwave or radio frequency source, the frequency of the microwave or radio frequency energy, or the processing feed speed of one of the processing procedures. The microwave or radio frequency source provides microwave or radio frequency energy to the processing target area while the laser source provides laser energy to the processing target area; The amount of free electrons in the processing target area of ​​the solid structure increases by the laser energy. The increase in the amount of free electrons causes the processing target area to absorb the microwave or radio frequency energy and increase the temperature. The increase in temperature helps the processing target area absorb more laser energy to further increase the amount of free electrons. The further increase in the amount of free electrons causes the processing target area to absorb more microwave or radio frequency energy, thereby forming a positive cycle of laser energy and microwave or radio frequency energy, resulting in qualitative changes or defects and thus forming a modified layer.

16. The method for processing a solid structure as described in claim 15, characterized in that, The modification step may include a heating step, in which the solid structure is heated by a heat source.

17. The method for processing a solid structure as described in claim 15, characterized in that, The hardness or stress of the modified layer in the solid structure differs from that of other regions of the solid structure.

18. The method for processing a solid structure as described in claim 15, characterized in that, The microwave or radio frequency source is a dual microwave or radio frequency source, which has two sets of microwave or radio frequency sources. The two sets of microwave or radio frequency sources share the coaxial resonant cavity and are respectively located on opposite sides of the solid structure. The direction in which the two sets of microwave or radio frequency sources provide microwave or radio frequency energy to the processing target area is perpendicular to the direction in which the laser source provides laser energy to the processing target area.

19. The method for processing a solid structure as described in claim 15, characterized in that, The laser source provides laser energy by generating a pulse of light, and the microwave or radio frequency source provides microwave or radio frequency energy by intermittently generating an electromagnetic wave. The microwave or radio frequency source is turned on before the laser source outputs the pulse of light and turned off after the pulse of light is turned off, or it is turned on simultaneously with the laser source outputting the pulse of light and turned off after the pulse of light is turned off.

20. The method for processing a solid structure as described in claim 15, characterized in that, During the modification step, the laser source adjusts the laser energy supplied to the processing target area according to the microwave or radio frequency energy provided by the microwave or radio frequency source, or the microwave or radio frequency source adjusts the microwave or radio frequency energy supplied to the processing target area according to the laser energy provided by the laser source.

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