一种抗辐照存储单元

By designing radiation-resistant memory cells and using PMOS transistors to surround redundant nodes, combined with the principle of polarity hardening, the problem of insufficient resistance to single-event upsets in existing technologies has been solved, achieving high radiation resistance and data stability.

CN115359822BActive Publication Date: 2026-07-17ANHUI UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
ANHUI UNIV
Filing Date
2022-08-24
Publication Date
2026-07-17

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Abstract

本发明公开了一种抗辐照存储单元，其由10个一类MOS晶体管、8个二类MOS晶体管和4个存储节点构成，10个一类MOS晶体管依次定义为P1～P10，8个二类MOS晶体管依次定义为N1～N8，4个存储节点依次为第一存储节点Q、第二存储节点QB、第一冗余节点S0及第二冗余节点S1。本发明的抗辐照存储单元的第一冗余节点S0和第二冗余节点S1均只由PMOS晶体管包围，在不同存储状态下，总有1个节点处于极性加固状态，可以有效避免发生数据翻转；同时节点数据的稳定保证了剩余节点可以在发生翻转后通过电路反馈恢复至初始状态，从而使得电路抗SEU的能力得到了提高。
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