Joining method and joining device

Abstract

The present application relates to a bonding method and a bonding apparatus. A technique for reducing warping of a first substrate including a glass substrate and a resin layer and improving bonding accuracy between the first substrate and a second substrate before bonding the first substrate and the second substrate is provided. The bonding method has steps (A) to (C). (A) The first substrate including the glass substrate and the resin layer is adsorptively held by a first holding portion. (B) The second substrate is adsorptively held by a second holding portion. (C) The first holding portion and the second holding portion are relatively moved, so that the first substrate and the second substrate are brought into contact with each other with an adhesive interposed therebetween and are pressed. The bonding method has steps (D) to (E). (D) The first substrate is heated by a heating portion. (E) The first substrate is transported by a transporting portion that transports the first substrate from the heating portion to the first holding portion. The first substrate is heated by the heating portion before the first substrate is adsorptively held by the first holding portion, so that warping of the first substrate is reduced.

Description

Technical Field

[0001] This disclosure relates to a joining method and a joining device. Background Technology

[0002] Patent Document 1 discloses a bonding method in which a substrate to be processed and a support substrate are held in a first holding part and a second holding part arranged opposite to each other. While each substrate is heated by a heating mechanism of each holding part, the second holding part is pressed against the first holding part to bond the substrate to be processed and the support substrate.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2013-65677 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] One technical solution disclosed herein provides a technique for reducing the warpage of a first substrate and improving the bonding accuracy between the first substrate and the second substrate before bonding the first substrate and the second substrate, wherein the first substrate comprises a glass substrate and a resin layer.

[0008] Solution for solving the problem

[0009] The bonding method of this disclosure includes the following steps (A) to (C): (A) A first substrate comprising a glass substrate and a resin layer is held by adsorption using a first holding part. (B) A second substrate is held by adsorption using a second holding part. (C) The first holding part and the second holding part are moved relative to each other, thereby bringing the first substrate and the second substrate into contact through an adhesive and applying pressure. The bonding method includes the following steps (D) to (E): (D) The first substrate is heated using a heating part. (E) The first substrate is transported using a transport part that transports the first substrate from the heating part to the first holding part. Before holding the first substrate by adsorption using the first holding part, the first substrate is heated using the heating part, thereby reducing the warpage of the first substrate.

[0010] The effects of the invention

[0011] According to a technical solution disclosed herein, the warpage of the first substrate can be reduced before the first substrate and the second substrate are bonded, thereby improving the bonding accuracy between the first substrate and the second substrate. The first substrate includes a glass substrate and a resin layer. Attached Figure Description

[0012] Figure 1This is a top view showing a connection system according to one embodiment.

[0013] Figure 2 yes Figure 1 Side view of the joining system.

[0014] Figure 3 This is a side view showing an example of the first substrate and the second substrate.

[0015] Figure 4 This is a top view showing an example of a connecting device.

[0016] Figure 5 This is a front view showing an example of a junction and a flipped section.

[0017] Figure 6 This is a side view showing an example of a flipped section.

[0018] Figure 7 This is a side view showing an example of a conveyor section.

[0019] Figure 8 This is a top view showing an example of the first conveyor arm of the conveyor section.

[0020] Figure 9 This is a top view showing an example of the second conveyor arm of the conveyor section.

[0021] Figure 10 This is a cross-sectional view showing an example of a heating element.

[0022] Figure 11 This is a cross-sectional view showing an example of a joint.

[0023] Figure 12 This is a cross-sectional view showing an example of the movement of the joint.

[0024] Figure 13 This is a flowchart illustrating a joining method according to one embodiment.

[0025] Figure 14 This is a side view showing an example of the second heating section.

[0026] Figure 15 This is a side view showing an example of a warp measuring section. Detailed Implementation

[0027] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. Furthermore, in the drawings, the same or corresponding structures are labeled with the same reference numerals, and sometimes descriptions are omitted. Additionally, the X-axis, Y-axis, and Z-axis are mutually perpendicular directions; the X-axis and Y-axis are horizontal directions; and the Z-axis is a vertical direction.

[0028] First, refer to Figure 1 and Figure 2 The connection system 1 of this embodiment will be described. For example... Figure 3 As shown, the bonding system 1 uses adhesive G to bond the substrate to be processed W and the support substrate S, thereby forming an overlapping substrate T. The substrate to be processed W is the first substrate, and the support substrate S is the second substrate.

[0029] The substrate W to be processed includes, for example, a glass substrate Wa and a resin layer Wb formed on the glass substrate Wa. Multiple electronic circuits may be pre-formed on the surface of the glass substrate Wa where the resin layer Wb is formed. The surface of the substrate W to be processed that faces the support substrate S is designated as the "bonding surface Wj," and the surface opposite to the bonding surface Wj is designated as the "non-bonding surface Wn." The bonding surface Wj is the surface of the resin layer Wb, and the non-bonding surface Wn is the surface of the glass substrate Wa. After the substrate W to be processed is bonded to the support substrate S, the glass substrate Wa is thinned using a polishing process.

[0030] As described above, the substrate W to be processed includes a glass substrate Wa and a resin layer Wb formed on the glass substrate Wa. The resin layer Wb is formed, for example, by coating a resin composition onto the glass substrate Wa and heating the coated resin composition. The resin layer Wb is then cooled to room temperature.

[0031] After the resin layer Wb is formed, during the cooling process of the resin layer Wb, the substrate W being processed may warp due to the difference in thermal expansion between the resin layer Wb and the glass substrate Wa. When using the glass substrate Wa as the substrate for the resin layer Wb, the difference in thermal expansion between the resin layer Wb and the substrate is larger compared to using a silicon substrate or the like instead of the glass substrate Wa, resulting in greater warping.

[0032] In this embodiment, a heating section 130 for heating the substrate W before bonding the substrate W and the support substrate S is provided inside the bonding apparatus 80, as will be described in detail later. Therefore, warping that occurs during the cooling of the resin layer Wb after its formation can be reduced just before bonding. As a result, the horizontal alignment accuracy of the substrate W and the support substrate S just before bonding can be improved, thus enhancing bonding accuracy.

[0033] The support substrate S is a substrate with a diameter approximately the same as that of the substrate W to be processed, and is used to support the substrate W. For example, a glass substrate can be used as the support substrate S. The surface of the support substrate S opposite to the substrate W to be processed is designated as the "joining surface Sj", and the surface opposite to the joining surface Sj is designated as the "non-joining surface Sn".

[0034] Adhesive G is, for example, a thermosetting resin adhesive. Thermosetting refers to the property that it is not easily deformed at room temperature (e.g., around 20°C), but becomes easily molded by heating, and polymerizes and cures upon further heating without returning to its original state. For example, adhesive G may have a softening temperature of around 120°C to 140°C and a curing temperature of around 180°C. Adhesive G can also have multiple structures.

[0035] like Figure 1 As shown, the joining system 1 includes an infeed / outfeed station 2 and a processing station 3. The infeed / outfeed station 2 and the processing station 3 are connected in sequence as one unit in the negative Y-axis direction.

[0036] The infeed / outfeed station 2 includes a cassette placement stage 10 and a first transport area 11. The cassette placement stage 10 is a place for placing cassettes Cw, Cs, and Ct that house multiple (e.g., 25) substrates in a horizontal position. The infeed / outfeed station 2 has, for example, four placement sections 12 arranged in a row. Each placement section 12, for example, holds a cassette Cw that houses the substrate W to be processed, a cassette Cs that houses the supporting substrate S, and a cassette Ct that houses the overlapping substrate T.

[0037] The first conveying area 11 is provided with a conveying path 13 extending along the X-axis and a first conveying device 14 that can move along the conveying path 13. The first conveying device 14 can also move in the Y-axis direction and rotate about the Z-axis. The first conveying device 14 conveys the substrate W to be processed, the support substrate S and the overlapping substrate T between the boxes Cw, Cs and Ct placed in the mounting section 12 and the conveying device 30 of the processing station 3 (described later).

[0038] Processing station 3 includes a second conveying area 20, a conveying device 30, a coating device 40, a heat treatment device 50, and a bonding device 80. The conveying device 30, the coating device 40, the heat treatment device 50, and the bonding device 80 are arranged around the second conveying area 20. The arrangement and number of these devices can be set arbitrarily.

[0039] A second conveying device 21 is provided in the second conveying area 20. The second conveying device 21 is movable in the X-axis direction, Y-axis direction and Z-axis direction, and can rotate about the Z-axis. The second conveying device 21 conveys the substrate W to be processed, the support substrate S and the overlapping substrate T between the conveying device 30, the coating device 40, the heat treatment device 50 and the bonding device 80.

[0040] A conveying device 30 is disposed between the first conveying area 11 and the second conveying area 20. The first conveying device 14 and the second conveying device 21 exchange the substrate W to be processed, the support substrate S, and the overlapping substrate T via the conveying device 30. A coating device 40 applies an adhesive G to the bonding surface Sj of the support substrate S. A heat treatment device 50 heats the support substrate S coated with adhesive G to a predetermined temperature and vaporizes the organic solvent contained in the adhesive G. A bonding device 80 bonds the substrate W to be processed and the support substrate S using the adhesive G.

[0041] The bonding system 1 includes a control device 90. The control device 90 is, for example, a computer, including a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory. The storage medium 92 stores programs that control various processes executed in the bonding system 1. The control device 90 causes the CPU 91 to execute the program stored in the storage medium 92, thereby controlling the operation of the bonding system 1.

[0042] Next, refer to Figure 1 and Figure 2 Here is a brief explanation of the operation of the bonding system 1. In the bonding system 1, firstly, a box Cw containing multiple substrates W to be processed, a box Cs containing multiple support substrates S, and an empty box Ct are respectively placed in the loading section 12 of the feed-in / feed-out station 2.

[0043] Then, the first conveying device 14 removes the support substrate S from the box Cs and conveys it to the conveying device 30 of the processing station 3. At this time, the support substrate S is conveyed with the mating surface Sj facing upward. After the support substrate S is removed from the conveying device 30 by the second conveying device 21, it is conveyed to the coating device 40.

[0044] Next, the coating apparatus 40 applies adhesive G to the bonding surface Sj of the support substrate S. Afterward, the support substrate S is removed from the coating apparatus 40 by the second conveying device 21 and then conveyed to the heat treatment apparatus 50.

[0045] Next, the heat treatment apparatus 50 heats the support substrate S to a predetermined temperature. As a result, the organic solvent contained in the adhesive G applied to the support substrate S vaporizes. The vaporized adhesive G hardens to the point that it will not flow even when the support substrate S is tilted. Afterwards, the support substrate S is removed from the heat treatment apparatus 50 using the second conveying device 21 and conveyed to the bonding device 80.

[0046] During the aforementioned processing, the substrate W to be processed is removed from the cassette Cw by the first conveying device 14 and conveyed to the conveying device 30 of the processing station 3. At this time, the substrate W to be processed is conveyed with the mating surface Wj facing upward. After being removed from the conveying device 30 by the second conveying device 21, the substrate W to be processed is conveyed to the mating device 80.

[0047] When the substrate to be processed W and the support substrate S are fed into the bonding device 80, the bonding device 80 bonds the substrate to be processed W and the support substrate S to form an overlapping substrate T. After the overlapping substrate T is removed from the bonding device 80 by the second conveying device 21, it is transferred to the first conveying device 14 by the conveying device 30 and then housed in the box Ct by the first conveying device 14. Thus, the series of bonding processes are completed.

[0048] Next, refer to Figure 4 An example of the engaging device 80 will be described below. Figure 4 As shown, the joining device 80 includes a processing container 100 capable of sealing its interior. An inlet / outlet 101 is formed on the side of the processing container 100 near the second transport region 20, through which the substrate to be processed W, the support substrate S, and the overlapping substrate T pass. An opening / closing gate (not shown) is provided at the inlet / outlet 101.

[0049] The processing container 100 may also have an inner wall 102 that divides the area inside the processing container 100 into a pre-processing area D1 and a bonding area D2. The inner wall 102 has an inlet and outlet 103 through which the substrate W to be processed, the support substrate S and the overlapping substrate T pass, and the inlet and outlet 103 is provided with an opening and closing gate (not shown).

[0050] The pre-processing area D1 is provided with a junction section 110 for exchanging the substrate W to be processed, the support substrate S, and the overlapping substrate T between the junction area D1 and the outside of the bonding device 80. The junction section 110 is disposed adjacent to the feed inlet / outlet 101.

[0051] The junction 110 includes a junction arm 111 and a support pin 112. The junction arm 111 is located in the second conveying device 21 (see reference 21). Figure 1 The substrate W to be processed, the support substrate S, and the overlapping substrate T are connected between the support pin 112 and the support pin 112. The support pin 112 is provided in multiple places, for example three places, for supporting the substrate W to be processed, the support substrate S, and the overlapping substrate T.

[0052] As described below, the junction 110 is arranged in multiple layers, such as two layers, in the vertical direction, enabling simultaneous junction of any two of the substrate to be processed W, the support substrate S, and the overlapping substrate T. For example, one junction 110 may be used to junction the substrate to be processed W or the support substrate S before bonding, and another junction 110 may be used to junction the overlapping substrate T after bonding. Alternatively, one junction 110 may be used to junction the substrate to be processed W before bonding, and another junction 110 may be used to junction the support substrate S before bonding.

[0053] Above the junction 110, for example, a flipping section 120 is provided to flip the support substrate S vertically. The flipping section 120 includes a holding arm 121 that holds the substrate W being processed or the support substrate S in a clamping manner. The holding arm 121 is along the horizontal direction ( Figure 4 It extends along the Y-axis, rotates freely around the horizontal axis, and can move in both the horizontal (X-axis and Y-axis) and vertical (Z-axis) directions.

[0054] Furthermore, the flipping unit 120 includes an adjustment mechanism for adjusting the orientation of the substrate W to be processed or the support substrate S in the horizontal direction. The adjustment mechanism includes a detection unit 122 for detecting the position of a notch in the support substrate S or the substrate W to be processed. Thus, in the flipping unit 120, while moving the support substrate S or the substrate W to be processed held in the holding arm 121 in the horizontal direction, the detection unit 122 detects the position of the notch in the support substrate S or the substrate W to be processed, thereby adjusting the position of the notch and adjusting the orientation of the support substrate S or the substrate W to be processed in the horizontal direction.

[0055] A heating section 130 is provided on the positive Y-axis side of the bonding region D2 to heat the substrate W to be processed. The heating section 130 heats the substrate W to reduce the warpage of the substrate W.

[0056] A conveying section 140 is provided on the negative X-axis side of the bonding region D2. The conveying section 140 conveys the substrate W to be processed, the support substrate S, and the overlapping substrate T relative to the transfer section 110, the flipping section 120, the heating section 130, and the bonding section 150 (described later). The conveying section 140 is arranged adjacent to the feed inlet and feed outlet 103.

[0057] The conveying unit 140 includes, for example, a first conveying arm 141 and a second conveying arm 142. The first conveying arm 141 and the second conveying arm 142 are arranged in two layers from bottom to top in the vertical direction, and can be moved in the horizontal and vertical directions by means of a drive unit (not shown).

[0058] The first transport arm 141 transports the substrate W being processed, for example, by holding the lower surface (non-joining surface Wn) of the substrate W or the lower surface (non-joining surface Sn) of the support substrate S. On the other hand, the second transport arm 142 transports the substrate S by holding the outer periphery of the lower surface (joining surface Sj) of the support substrate S after it has been flipped up and down by the flipping part 120.

[0059] A joining portion 150 is provided on the positive X-axis side of the joining region D2 to join the substrate W to be processed to the support substrate S. The joining portion 150 joins the substrate W to be processed to the support substrate S to form an overlapping substrate T. After the overlapping substrate T is transported from the joining portion 150 to the transfer portion 110 by the first transport arm 141 of the transport portion 140, it is transferred to the transfer arm 111 by means of the support pin 112, and then transferred from the transfer arm 111 to the second transport device 21.

[0060] Next, refer to Figure 5 An example of the transfer section 110 will be described. As described above, the transfer section 110 includes a transfer arm 111 and a support pin 112. The transfer arm 111 transfers the substrate W to be processed, the support substrate S, or the overlapping substrate T between the second conveying device 21 and the support pin 112. The support pin 112 is provided at multiple, for example, three, locations for supporting the substrate W to be processed, the support substrate S, or the overlapping substrate T.

[0061] The transfer section 110 includes an arm drive section 113. The arm drive section 113 includes a motor, etc., for moving the transfer arm 111 in the X-axis direction. The arm drive section 113 moves along the guide rail 114 (see reference). Figure 4 The transfer arm 111 can move in the Y-axis direction. It is also capable of moving horizontally (in both the X and Y axes). Furthermore, the arm drive unit 113 can also move the transfer arm 111 in the Z-axis direction.

[0062] like Figure 5 As shown, the transfer arm 111 has multiple, for example four, support pins 115 for supporting the lower surface of the substrate W to be processed, the support substrate S, or the overlapping substrate T. Additionally, the transfer arm 111 has guide members 116 for positioning the substrate W to be processed, the support substrate S, or the overlapping substrate T supported by the support pins 115. The guide members 116 are provided in multiple, for example four, locations to guide the sides of the substrate W to be processed, the support substrate S, or the overlapping substrate T.

[0063] The junction 110 is arranged in two layers in the vertical direction, and a flipping portion 120 is arranged above these junctions 110. The junction arm 111 of the junction 110 moves horizontally below the holding arm 121 of the flipping portion 120 and the adjusting mechanism 126. In addition, the support pin 112 of the junction 110 is arranged below the holding arm 121 of the flipping portion 120.

[0064] Next, refer to Figure 5 and Figure 6 An example of the flipping section 120 will be described below. As described above, the flipping section 120 includes a holding arm 121 and a detection section 122. Additionally, the flipping section 120 includes a first drive section 123. The first drive section 123 includes a motor or the like, for rotating the holding arm 121 about a horizontal axis and moving the holding arm 121 in the horizontal direction (X-axis and Y-axis directions). Furthermore, the first drive section 123 can also move the holding arm 121 in the horizontal direction by rotating it about a vertical axis.

[0065] Below the first drive unit 123, a second drive unit 124, including a motor, is provided. The second drive unit 124 causes the first drive unit 123 to move vertically along the support column 125. Using the first drive unit 123 and the second drive unit 124, the holding arm 121 can rotate about a horizontal axis and can move in both the vertical and horizontal directions.

[0066] An adjustment mechanism 126 is supported on the support column 125 by means of a support plate 127. The adjustment mechanism 126 is disposed adjacent to the holding arm 121. The adjustment mechanism 126 adjusts the orientation of the support substrate S or the substrate W to be processed held in the holding arm 121 in the horizontal direction.

[0067] The adjustment mechanism 126 has a base 128 and a detection unit 122. While moving the support substrate S or the substrate W to be processed held in the holding arm 121 in the horizontal direction, the adjustment mechanism 126 uses the detection unit 122 to detect the position of the notch on the support substrate S or the substrate W to be processed, thereby adjusting the position of the notch and adjusting the orientation of the support substrate S or the substrate W to be processed in the horizontal direction.

[0068] Next, refer to Figures 7-9 An example of the conveyor section 140 will be described below. Figure 7 As shown and described above, the conveying unit 140 includes a first conveying arm 141 and a second conveying arm 142. The first conveying arm 141 and the second conveying arm 142 are arranged in two layers from bottom to top in the vertical direction. The first conveying arm 141 and the second conveying arm 142 may also have different shapes, as will be described later.

[0069] At the base of the first conveying arm 141 and the second conveying arm 142, an arm drive unit 143, including a motor or the like, is provided. The arm drive unit 143 enables the first conveying arm 141 and the second conveying arm 142 to move independently in the horizontal direction. The first conveying arm 141, the second conveying arm 142, and the arm drive unit 143 are supported on a base 144. The base 144 can move in the vertical direction using a drive unit (not shown) including a motor or the like.

[0070] like Figure 8 As shown, the first conveying arm 141 conveys the substrate W to be processed, the supporting substrate S, or the overlapping substrate T by holding the lower surface (non-joining surfaces Wn and Sn of the substrate W to be processed and the supporting substrate S) in the conveying process. The first conveying arm 141 has a fork shape with its front end branching into two strands.

[0071] On the first transport arm 141, there are multiple, for example four, resin O-rings 145. The O-rings 145 contact the lower surface of the substrate W to be processed, the support substrate S, or the overlapping substrate T, and hold their lower surfaces by friction. The first transport arm 141 holds the substrate W to be processed, the support substrate S, or the overlapping substrate T horizontally on the O-rings 145.

[0072] Furthermore, on the first transport arm 141, on the outer side of the substrate W to be processed, the support substrate S, or the overlapping substrate T held in place by the O-ring 145, a first guide 146 and a second guide 147 are provided, for example. The first guide 146 is provided at the front end of the first transport arm 141 where it branches into two strands. The second guide 147 is formed in an arc shape on the side opposite to the first guide 146, with respect to the substrate W to be processed, the support substrate S, or the overlapping substrate T. The first guide 146 and the second guide 147 prevent the substrate W to be processed, the support substrate S, or the overlapping substrate T from falling off the first transport arm 141. In addition, when the substrate W to be processed, the support substrate S, or the overlapping substrate T is held in the appropriate position by the O-ring 145, the substrate W to be processed, the support substrate S, or the overlapping substrate T does not come into contact with the first guide 146 and the second guide 147.

[0073] like Figure 9 As shown, the second conveying arm 142 conveys the support substrate S while holding the outer periphery of the lower surface (joint surface Sj). That is, the second conveying arm 142 conveys the support substrate S after it has been flipped up and down by the flipping part 120 while holding the outer periphery of the joint surface Sj. The second conveying arm 142 has a fork shape with its front end branching into two strands.

[0074] The second conveying arm 142 is provided with multiple, for example, four, holding portions 148. Each holding portion 148 has a horizontal surface that holds the outer periphery of the mating surface Sj of the support substrate S, and a conical surface that slopes radially outward from the horizontal surface. The conical surface positions the support substrate S in the horizontal direction. The second conveying arm 142 holds the support substrate S horizontally on the holding portions 148. The second conveying arm 142 holds the outer periphery of the mating surface Sj of the support substrate S. This, for example, can suppress contamination of the mating surface Sj by particles or other contaminants adhering to the second conveying arm 142.

[0075] Next, refer to Figure 10An example of a heating section 130 will be described. The heating section 130 includes, for example, a hot plate 131, an annular retainer 132 that houses the hot plate 131 and holds the outer periphery of the hot plate 131, and a generally cylindrical support ring 133 that surrounds the outer periphery of the retainer 132.

[0076] On the hot plate 131, there are multiple, for example, three, support pins 134. The support pins 134 support the substrate W to be processed and form a gap between the substrate W to be processed and the hot plate 131. The size of this gap H1 is, for example, 0.4 mm or more.

[0077] The hot plate 131 has a generally disc-shaped shape and heats the substrate W to be processed via a support pin 134. A heating mechanism 135 is, for example, built into the hot plate 131. The heating mechanism 135 includes, for example, a heater. The heating temperature of the hot plate 131 is controlled, for example, by a control device 90, to heat the substrate W placed on the hot plate 131 to a predetermined temperature.

[0078] Three lifting pins 136 are provided below the hot plate 131 for supporting the substrate W to be processed from below and raising and lowering it. The lifting pins 136 can move up and down by means of the lifting drive unit 137. Three through holes 138 are formed near the center of the hot plate 131, extending through the hot plate 131 in the thickness direction. Thus, the lifting pins 136 can pass through the through holes 138 and protrude from the upper surface of the hot plate 131.

[0079] Next, refer to Figure 11 and Figure 12 The joining portion 150 will be described below. The joining portion 150 includes a first retaining portion 151 and a second retaining portion 152 disposed above the first retaining portion 151 and opposite to the first retaining portion 151.

[0080] The first holding portion 151 and the second holding portion 152 are, for example, electrostatic chucks, which hold the substrate W to be processed and the support substrate S by electrostatic adsorption. The first holding portion 151 holds the substrate W to be processed from below, and the second holding portion 152 holds the support substrate S from above. The substrate W to be processed and the support substrate S are held in the first holding portion 151 and the second holding portion 152 with their mating surfaces Wj and Sj facing each other.

[0081] Furthermore, the first holding portion 151 and the second holding portion 152 may also include a vacuum adsorption portion for vacuum adsorption of the support substrate S and the substrate W to be processed, in addition to the electrostatic adsorption portion for electrostatic adsorption of the support substrate S and the substrate W to be processed, or may include a vacuum adsorption portion instead of the electrostatic adsorption portion.

[0082] The joining portion 150 includes a first heating mechanism 153 and a second heating mechanism 154. The first heating mechanism 153 is built into the first holding portion 151, and by heating the first holding portion 151, the substrate W to be processed held in the first holding portion 151 is heated to a predetermined temperature. The second heating mechanism 154 is built into the second holding portion 152, and by heating the second holding portion 152, the support substrate S held in the second holding portion 152 is heated to a predetermined temperature.

[0083] The joint 150 includes a pressurizing part 155. The pressurizing part 155 moves the second holding part 152 vertically downward, thereby bringing the support substrate S into contact with the substrate W to be processed and applying pressure. Furthermore, the pressurizing part 155 can move the first holding part 151 and the second holding part 152 relative to each other, or it can move the first holding part 151. The pressurizing part 155 includes a base member 156, a pressure vessel 157, a gas supply pipe 158, and a gas supply source 159. The base member 156 is mounted on the top surface inside the second chamber 162, described later.

[0084] The pressure vessel 157 is, for example, constructed from a bellows made of stainless steel that is flexible in the vertical direction. The lower end of the pressure vessel 157 is fixed to the upper surface of the second retaining part 152, and the upper end of the pressure vessel 157 is fixed to the lower surface of the base member 156. One end of the gas supply pipe 158 is connected to the pressure vessel 157 via the base member 156 and the second chamber part 162 (described later), and the other end is connected to the gas supply source 159.

[0085] For the pressure vessel 157, gas is supplied to the interior of the pressure vessel 157 from the gas supply source 159 via the gas supply pipe 158, thereby causing the pressure vessel 157 to extend and the second holding portion 152 to descend. As a result, the support substrate S comes into contact with and is pressurized against the substrate W to be processed. By adjusting the pressure of the gas supplied to the pressure vessel 157, the pressure between the substrate W to be processed and the support substrate S is adjusted.

[0086] The joint 150 includes a chamber 160, a moving mechanism 170, a pressure reducing part 180, a first imaging part 191, and a second imaging part 192.

[0087] Chamber 160 is a processing container capable of sealing its interior, including a first chamber portion 161 and a second chamber portion 162. The first chamber portion 161 is a bottom-mounted cylindrical container that is open at the top, and houses a first holding portion 151 and the like inside. The second chamber portion 162 is a bottom-mounted cylindrical container that is open at the bottom, and houses a second holding portion 152, a pressure vessel 157, and the like inside.

[0088] The second chamber 162 is configured to be vertically raised and lowered using a lifting mechanism (not shown) such as a cylinder. The lifting mechanism lowers the second chamber 162 to abut against the first chamber 161, thereby forming a sealed space inside the chamber 160. Furthermore, a sealing member 163 is provided on the contact surface of the second chamber 162 that abuts against the first chamber 161 to ensure the airtightness of the chamber 160. For example, an O-ring is used as the sealing member 163.

[0089] A moving mechanism 170 is provided on the outer periphery of the second chamber portion 162, and the second holding portion 152 is moved horizontally by means of the second chamber portion 162. A plurality of moving mechanisms 170 (e.g., five) are provided relative to the outer periphery of the second chamber portion 162, four of the five moving mechanisms 170 are used for the horizontal movement of the second holding portion 152, and the remaining one is used for the rotation of the second holding portion 152 about the vertical axis.

[0090] The moving mechanism 170 includes a cam 171 that abuts against the outer periphery of the second chamber portion 162 and moves the second holding portion 152, and a rotary drive portion 173 that rotates the cam 171 via a shaft 172. The cam 171 is eccentrically positioned relative to the central axis of the shaft 172. Thus, by rotating the cam 171 using the rotary drive portion 173, the cam 171 moves relative to the central position of the second holding portion 152, thereby enabling the second holding portion 152 to move in the horizontal direction.

[0091] The pressure reduction unit 180 is provided, for example, at the lower part of the first chamber 161, to reduce the pressure inside the chamber 160. The pressure reduction unit 180 includes a suction pipe 181 for evacuating the atmosphere inside the chamber 160 and a suction device 182 such as a vacuum pump connected to the suction pipe 181.

[0092] The first imaging unit 191 is disposed below the second holding unit 152 and captures images of the lower surface (joint surface Sj) of the support substrate S held in the second holding unit 152. The second imaging unit 192 is disposed above the first holding unit 151 and captures images of the upper surface (joint surface Wj) of the substrate W to be processed held in the first holding unit 151.

[0093] The first imaging unit 191 and the second imaging unit 192 are configured to move horizontally using a moving mechanism (not shown). Before the second chamber 162 is lowered, the first imaging unit 191 and the second imaging unit 192 enter the chamber 160 and photograph the substrate W to be processed and the support substrate S. The photographing data from the first imaging unit 191 and the second imaging unit 192 are transmitted to the control device 90. Furthermore, the first imaging unit 191 and the second imaging unit 192 are, for example, wide-angle CCD cameras.

[0094] Next, refer to Figure 13 An example of the operation of the coupling device 80 will be described. When using the second conveying device 21 (see reference...) Figure 1 When the substrate W to be processed is handed over to the handover arm 111 of the handover section 110, the handover arm 111 hands over the substrate W to the support pin 112. After that, the substrate W to be processed is conveyed from the support pin 112 to the flipping section 120 by the first conveying arm 141 of the conveying section 140.

[0095] The substrate W to be processed is conveyed to the flipping section 120. The position of the notch is detected by the detection section 122 of the flipping section 120 and the orientation in the horizontal direction is adjusted (step S101). Then, the substrate W to be processed is conveyed from the flipping section 120 to the heating section 130 by the first conveying arm 141 of the conveying section 140.

[0096] The substrate W to be processed, conveyed to the heating section 130, is heated to a predetermined temperature by the hot plate 131 of the heating section 130 (step S102). This reduces the warpage of the substrate W. Afterward, the substrate W is conveyed from the heating section 130 to the first holding section 151 of the joining section 150 via the first conveying arm 141 of the conveying section 140, and is held by the first holding section 151 (step S103). The first holding section 151 is preheated to a desired temperature by the first heating mechanism 153.

[0097] On the other hand, when using the second conveying device 21 (see reference) Figure 1 When the support substrate S is handed over to the handover arm 111 of the handover section 110, the handover arm 111 hands over the support substrate S to the support pin 112. After that, the support substrate S is conveyed from the support pin 112 to the flipping section 120 by the first conveying arm 141 of the conveying section 140.

[0098] The support substrate S, which is conveyed to the flipping unit 120, has its notch position detected by the detection unit 122 of the flipping unit 120, and its orientation in the horizontal direction is adjusted (step S104). After that, the support substrate S is flipped up and down by the flipping unit 120 (step S105). As a result, the mating surface Sj of the support substrate S faces downward.

[0099] Subsequently, the support substrate S is conveyed from the flipping part 120 to the second holding part 152 of the joining part 150 by the second conveying arm 142 of the conveying part 140, and is held by the second holding part 152 (step S106). The second holding part 152 is preheated to the desired temperature by the second heating mechanism 154.

[0100] When the substrate W to be processed and the support substrate S are fed into the joint 150, horizontal alignment of the substrate W to be processed and the support substrate S is performed (step S107). Multiple reference points are pre-formed on the substrate W to be processed and the support substrate S. The joint 150 allows... Figure 11 The first imaging unit 191 and the second imaging unit 192 shown move horizontally to capture reference points on the substrate W being processed and the support substrate S, respectively. The engagement unit 150 uses the moving mechanism 170 to adjust the horizontal position of the support substrate S in such a way that the positions of the reference points contained in the image captured by the first imaging unit 191 are aligned with the positions of the reference points contained in the image captured by the second imaging unit 192. Specifically, the cam 171 is rotated by the rotation drive unit 173, and the second holding unit 152 is moved horizontally by the second chamber unit 162, thereby adjusting the horizontal position of the support substrate S.

[0101] Subsequently, after the first imaging section 191 and the second imaging section 192 are withdrawn from the chamber 160, the second chamber section 162 descends. As a result, the second chamber section 162 comes into contact with the first chamber section 161, forming a sealed space within the chamber 160. Then, the joint 150 uses the decompression section 180 to evacuate the atmosphere within the chamber 160, thereby depressurizing the air pressure within the chamber 160.

[0102] Next, the joining portion 150 uses the pressurizing portion 155 to lower the second holding portion 152, thereby bringing the substrate W to be processed into contact with the support substrate S (step S108). Then, the joining portion 150 supplies gas to the pressure vessel 157 and sets the pressure vessel 157 to the desired pressure, thereby pressurizing the substrate W to be processed and the support substrate S (step S109).

[0103] The adhesive G applied to the bonding surface Sj of the support substrate S is softened by heating. The support substrate S is then pressed against the substrate W to be processed at a desired pressure for a specified time, thereby bonding the substrate W to be processed and the support substrate S to form an overlapping substrate T. At this time, since the chamber 160 is under reduced pressure, the generation of air bubbles between the substrate W to be processed and the support substrate S can be suppressed.

[0104] Afterwards, the overlapping substrate T is transported from the joining part 150 to the transfer part 110 via the first transport arm 141 of the transport part 140, and then transferred to the transfer arm 111 by means of the support pin 112, and then transferred from the transfer arm 111 to the second transport device 21. The second transport device 21 sends the overlapping substrate T out of the joining device 80 (step S110).

[0105] According to this embodiment, a heating section 130 is provided inside the bonding apparatus 80. Before the bonding section 150 bonds the substrate W to be processed and the support substrate S, the heating section 130 heats the substrate W to be processed. By heating the substrate W to be processed by the heating section 130, warping of the substrate W to be processed that occurs during the cooling process is reduced. Then, if the substrate W to be processed is held in the first holding section 151, the horizontal alignment accuracy between the substrate W to be processed and the support substrate S can be improved. Therefore, the bonding accuracy can be improved.

[0106] Next, refer to Figure 14 The conveying section 140 of the first modified example will be described. The conveying section 140 may also include a second heating section 200, which heats the substrate W to be processed, which has been heated by the heating section 130. During the conveying of the substrate W to be processed, the temperature of the substrate W to be processed can be maintained by the second heating section 200, and the warping of the substrate W to be processed can be suppressed.

[0107] The second heating section 200 includes, for example, a hot plate 201 disposed at a distance from the substrate W to be processed. The hot plate 201 is horizontally disposed above the substrate W to be processed, which is held by the first transport arm 141. A gap is formed between the hot plate 201 and the substrate W to be processed, and the hot plate 201 does not contact the mating surface Wj of the substrate W to be processed. As a result, contamination of the mating surface Wj by particles or the like adhering to the hot plate 201 can be prevented.

[0108] The hot plate 201 is, for example, a disk with a diameter approximately the same as or larger than that of the substrate W to be processed. A heating mechanism 202 is, for example, built into the hot plate 201. The heating mechanism 202 includes, for example, a heater. The heating temperature of the hot plate 201 is controlled, for example, by a control device 90, to maintain the substrate W disposed below the hot plate 201 at a predetermined temperature.

[0109] Furthermore, the second heating unit 200 may also include a heating nozzle instead of the hot plate 201. The heating nozzle sprays gas preheated to a predetermined temperature toward the substrate W to be processed, thereby heating the substrate W. In this case, the substrate W can also be heated in a non-contact manner. The gas sprayed by the heating nozzle is, for example, an inactive gas such as nitrogen or argon. When the heating temperature is low, air or the like can also be used.

[0110] Next, refer to Figure 15The conveying unit 140 of the second modification will be described. The conveying unit 140 may also include a warpage measuring unit 210 for measuring the warpage of the substrate W to be processed. The warpage measuring unit 210 may include, for example, a camera, a laser interferometer, or a laser displacement meter. The warpage of the substrate W to be processed is measured while the substrate W is supported at multiple points in a sliding manner, without adhering to the substrate W. The warpage measuring unit 210 transmits the measured data to the control device 90.

[0111] When the transport unit 140 includes the warpage measurement unit 210, the warpage of the substrate W to be processed can be confirmed during the transport process. For example, if the transport unit 140 does not include the second heating unit 200, but includes the warpage measurement unit 210, it can be confirmed whether the temperature of the substrate W to be processed decreases during the transport process, resulting in increased warpage of the substrate W. Furthermore, the transport unit 140 may include both the second heating unit 200 and the warpage measurement unit 210.

[0112] If the warpage of the substrate W to be processed, as measured by the warpage measuring unit 210, is outside the allowable range, the control device 90 can also use the transport unit 140 to return the substrate W to the heating unit 130 and reheat the substrate W using the heating unit 130. This allows the warpage of the substrate W to be controlled within the allowable range. Furthermore, if the warpage of the substrate W to be processed, as measured by the warpage measuring unit 210, is within the allowable range, the control device 90 can use the transport unit 140 to transport the substrate W to the first holding portion 151 of the bonding portion 150.

[0113] Furthermore, if the warpage of the substrate W being processed, as measured by the warpage measuring unit 210, is outside the allowable range, the control device 90 can also change the setting of the heating temperature or heating time for heating the substrate W using the heating unit 130. The changed heating temperature is set higher than the original heating temperature. Additionally, the changed heating time is set longer than the original heating time. In subsequent cycles, the warpage of the substrate W being processed can be controlled within the allowable range.

[0114] Furthermore, in this embodiment, the warpage measuring unit 210 is disposed on the conveying unit 140, but it may also be disposed on the heating unit 130. Before the conveying unit 140 receives the substrate W to be processed from the heating unit 130, it can be confirmed whether the warpage of the substrate W to be processed is within the allowable range. If the warpage of the substrate W to be processed is outside the allowable range, the control device 90 sets or changes the heating temperature or heating time of the substrate W to be processed by the heating unit 130. The warpage measuring unit 210 may also be disposed on both the heating unit 130 and the conveying unit 140.

[0115] Furthermore, when the transport unit 140 includes both the second heating unit 200 and the warpage measurement unit 210, and the warpage of the substrate W to be processed, as measured by the warpage measurement unit 210, is outside the allowable range, the control device 90 can also set or change the heating temperature or heating time of the substrate W to be processed using the second heating unit 200. In this case, the warpage of the substrate W to be processed can also be controlled within the allowable range.

[0116] The embodiments of the joining method and joining device of this disclosure have been described above, but this disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These embodiments are, of course, also within the technical scope of this disclosure.

Claims

1. A bonding method comprising the steps of: adsorbing and holding a first substrate comprising a glass substrate and a resin layer using a first holding portion; adsorbing and holding a second substrate using a second holding portion; moving the first holding portion and the second holding portion relative to each other, thereby bringing the first substrate and the second substrate into contact through an adhesive and applying pressure, wherein, The bonding method includes the following steps: heating the first substrate using a heating unit; and conveying the first substrate using a conveying unit that conveys the first substrate from the heating unit to the first holding unit. Before the first substrate is held by the first holding part, the first substrate is heated by the heating part to reduce the warpage of the first substrate. The conveying unit includes a second heating unit for heating the first substrate. The bonding method includes the following steps: heating the first substrate using the second heating part.

2. The joining method according to claim 1, wherein, The conveying unit includes a warpage measuring unit for measuring the warpage of the first substrate. The bonding method includes the following steps: measuring the warpage of the first substrate using the warpage measuring unit.

3. The joining method according to claim 2, wherein, The bonding method includes the following steps: if the warpage of the first substrate, as measured by the warpage measuring unit, is outside the allowable range, the first substrate is reheated by the heating unit.

4. The joining method according to claim 2, wherein, If the warpage of the first substrate, as measured by the warpage measurement unit, is outside the allowable range, the heating temperature or heating time of the first substrate heated by the heating unit is changed.

5. A bonding device for bonding a first substrate to a second substrate by means of an adhesive, the first substrate comprising a glass substrate and a resin layer, wherein, The engagement device includes: The first holding part adsorbs and holds the first substrate; The second holding part adsorbs and holds the second substrate; The pressure section moves the first holding section and the second holding section relative to each other, thereby bringing the first substrate and the second substrate into contact and applying pressure through the adhesive; A heating unit that heats the first substrate; A conveying unit that conveys the first substrate from the heating unit to the first holding unit; and The control unit controls the pressurizing unit, the heating unit, and the conveying unit. The control unit performs control as follows: before adsorbing and holding the first substrate using the first holding unit, the heating unit heats the first substrate, thereby reducing the warpage of the first substrate. The conveying unit includes a second heating unit for heating the first substrate.

6. The coupling device according to claim 5, wherein, The conveying unit includes a warpage measuring unit for measuring the warpage of the first substrate.

7. The coupling device according to claim 6, wherein, The control unit performs control as follows: if the warpage of the first substrate measured by the warpage measurement unit is outside the allowable range, the heating unit reheats the first substrate.

8. The coupling device according to claim 6, wherein, The control unit performs control as follows: if the warpage of the first substrate measured by the warpage measurement unit is outside the allowable range, the heating temperature or heating time of the first substrate heated by the heating unit is changed.

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