Display panel and manufacturing method thereof, and display device

Abstract

The present disclosure provides a display panel and a manufacturing method thereof, and a display device, which belong to the field of display technology. The display panel includes a base substrate, a driving circuit layer, which is arranged on one side of the base substrate and includes a plurality of pixel circuits; a first light-emitting layer, which is arranged on a side of the driving circuit layer away from the base substrate, the first light-emitting layer includes a plurality of first light-emitting devices, and the plurality of pixel circuits are used to drive each first light-emitting device to emit light in a one-to-one correspondence; a second light-emitting layer, which is arranged on a side of the driving circuit layer away from the base substrate, the second light-emitting layer includes a plurality of second light-emitting devices, and the second light-emitting devices are organic light-emitting transistors; wherein the orthographic projection of the second light-emitting device on the base substrate does not overlap with the orthographic projection of the first light-emitting device on the base substrate. The present disclosure helps to improve the color gamut and resolution of the display panel and improve the display effect of the display panel.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a display panel and a manufacturing method thereof, and a display device. Background Art

[0002] With the development of OLED (Organic Light-Emitting Diode) display technology, consumers have put forward higher requirements for OLED display products. At present, the color gamut and resolution of OLED display panels need to be further improved.

[0003] The above information disclosed in the Background section is only for enhancement of understanding of the background of the present disclosure and therefore it may include information that does not constitute the prior art that is already known to one of ordinary skill in the art. Summary of the invention

[0004] The purpose of the present disclosure is to provide a display panel and a manufacturing method thereof, and a display device, which are helpful to improve the color gamut and resolution of the display panel and improve the display effect of the display panel. To achieve the above-mentioned invention purpose, the present disclosure adopts the following technical solutions:

[0005] According to a first aspect of the present disclosure, there is provided a display panel, comprising:

[0006] Substrate substrate,

[0007] A driving circuit layer, disposed on one side of the base substrate, comprising a plurality of pixel circuits;

[0008] A first light-emitting layer is provided on a side of the driving circuit layer away from the base substrate, the first light-emitting layer comprises a plurality of first light-emitting devices, and the plurality of pixel circuits are used to drive each of the first light-emitting devices to emit light in a one-to-one correspondence;

[0009] A second light-emitting layer is provided on a side of the driving circuit layer away from the base substrate, the second light-emitting layer comprises a plurality of second light-emitting devices, and the second light-emitting devices are organic light-emitting transistors;

[0010] The orthographic projection of the second light emitting device on the base substrate does not overlap with the orthographic projection of the first light emitting device on the base substrate.

[0011] In an exemplary embodiment of the present disclosure, the first light-emitting layer includes:

[0012] A first electrode layer, disposed on a side of the driving circuit layer away from the base substrate, the first electrode layer comprising a plurality of first electrodes of the first light-emitting devices distributed at intervals;

[0013] A pixel definition layer is provided on a side of the first electrode layer away from the base substrate, the pixel definition layer is provided with a plurality of openings, and the plurality of openings expose the first electrodes of the first light-emitting devices in a one-to-one correspondence;

[0014] A first light-emitting functional layer is provided on a side of the first electrode layer away from the base substrate, the first light-emitting functional layer comprises a plurality of first light-emitting portions, and the plurality of first light-emitting portions are located in the openings one by one;

[0015] A second electrode layer is provided on a side of the first light-emitting functional layer away from the first light-emitting functional layer, and the second electrode layer includes a plurality of second electrodes of the first light-emitting devices;

[0016] The orthographic projection of the second light emitting device on the base substrate at least partially overlaps with the orthographic projection of the pixel definition layer on the base substrate.

[0017] In an exemplary embodiment of the present disclosure, the second light-emitting layer includes:

[0018] A second gate layer is provided on a side of the driving circuit layer away from the base substrate, the second gate layer comprising a plurality of gates of the second light emitting devices distributed at intervals;

[0019] A gate dielectric layer, disposed on a side of the second gate layer away from the base substrate, the gate dielectric layer covering the second gate layer;

[0020] A third electrode layer is provided on a side of the gate dielectric layer away from the base substrate, and the third electrode layer includes a plurality of first electrodes of the second light-emitting devices distributed at intervals;

[0021] A second light-emitting functional layer is provided on a side of the third electrode layer away from the base substrate;

[0022] The fourth electrode layer is arranged on a side of the second light-emitting functional layer away from the base substrate, and the fourth electrode layer includes a plurality of second electrodes of the second light-emitting devices.

[0023] In an exemplary embodiment of the present disclosure, the second gate layer is disposed on the same layer as the first electrode layer, and the orthographic projection of the second gate layer on the base substrate does not overlap with the orthographic projection of the first electrode layer on the base substrate;

[0024] The gate dielectric layer is reused as the pixel definition layer.

[0025] In an exemplary embodiment of the present disclosure, the second light-emitting layer includes:

[0026] A third electrode layer is provided on a side of the pixel definition layer away from the substrate, the third electrode layer comprising a plurality of first electrodes of the second light emitting devices distributed at intervals;

[0027] A second light-emitting functional layer is provided on a side of the third electrode layer away from the base substrate;

[0028] a fourth electrode layer, disposed on a side of the second light-emitting functional layer away from the base substrate, the fourth electrode layer comprising a plurality of second electrodes of the second light-emitting devices;

[0029] A gate dielectric layer, disposed on a side of the fourth electrode layer away from the base substrate, the gate dielectric layer covering the fourth electrode layer;

[0030] The second gate layer is arranged on a surface of the second gate layer away from the base substrate, and the second gate layer includes a plurality of gates of the second light-emitting devices that are distributed at intervals.

[0031] In an exemplary embodiment of the present disclosure, the thickness of the third electrode layer is 100-500 nm, and the material of the third electrode layer includes an opaque material.

[0032] In an exemplary embodiment of the present disclosure, the fourth electrode layer is disposed in the same layer as the second electrode layer.

[0033] In an exemplary embodiment of the present disclosure, the thickness of the pixel definition layer is 1-1.5 μm, the slope angle of the pixel definition layer between two adjacent openings is 20-40°, and along the arrangement direction of the first light-emitting device and the second light-emitting device, the width of the pixel definition layer between two adjacent openings is 10-15 μm, and the width of the opening is 70-90 μm.

[0034] In an exemplary embodiment of the present disclosure, the display panel further includes:

[0035] An encapsulation layer, provided on a side of the first light-emitting layer and the second light-emitting layer away from the base substrate;

[0036] The color filter layer is arranged on a side of the packaging layer away from the base substrate. The color filter layer includes a shading portion and a plurality of filter portions separated by the shading portion. The filter portions are arranged one-to-one with the first light-emitting device or the second light-emitting device in a direction perpendicular to the base substrate.

[0037] In an exemplary embodiment of the present disclosure, the display panel further includes:

[0038] A quantum dot conversion layer is arranged between the encapsulation layer and the color film layer, the quantum dot conversion layer includes an isolation part and a plurality of light conversion parts separated by the isolation part, the light conversion parts are arranged one-to-one with the first light-emitting device or the second light-emitting device in a direction perpendicular to the substrate, and the light conversion parts and the filter parts are arranged one-to-one with each other in a direction perpendicular to the substrate, and at least some of the multiple light conversion parts contain quantum dot materials.

[0039] In an exemplary embodiment of the present disclosure, the plurality of light conversion parts include:

[0040] A plurality of first light conversion parts, used for converting light emitted by the first light emitting device or the second light emitting device into a first color;

[0041] A plurality of second light conversion parts are used to convert the light emitted by the first light emitting device or the second light emitting device into a second color.

[0042] In an exemplary embodiment of the present disclosure, the plurality of light conversion parts further include:

[0043] a plurality of third light conversion parts, used for converting the light emitted by the first light emitting device or the second light emitting device into a third color;

[0044] or a plurality of light-transmitting portions, for allowing light emitted by the first light-emitting device or the second light-emitting device to pass through.

[0045] In an exemplary embodiment of the present disclosure, the driving circuit layer further includes:

[0046] A first scanning line, used for providing a first gate driving signal to the pixel circuit;

[0047] A second scan line, used for providing a second gate driving signal to the gate of the second light emitting device;

[0048] A first data line, used for providing a first data signal to the pixel circuit;

[0049] a second data line, used for providing a second data signal to the first electrode of the second light emitting device;

[0050] a first power supply voltage line, used for providing a first voltage to the second electrode of the first light emitting device;

[0051] The second power supply voltage line is used to provide a second voltage to the second electrode of the second light emitting device.

[0052] According to a second aspect of the present disclosure, a method for manufacturing a display panel is provided, comprising:

[0053] providing a substrate substrate,

[0054] forming a driving circuit layer on one side of the base substrate, wherein the driving circuit layer includes a plurality of pixel circuits;

[0055] A first light-emitting layer and a second light-emitting layer are formed on a side of the driving circuit layer away from the base substrate, wherein the first light-emitting layer includes a plurality of first light-emitting devices, and the plurality of pixel circuits are used to drive the first light-emitting devices to emit light in a one-to-one correspondence, and the second light-emitting layer includes a plurality of second light-emitting devices, and the second light-emitting devices are organic light-emitting transistors;

[0056] The orthographic projection of the second light emitting device on the base substrate does not overlap with the orthographic projection of the first light emitting device on the base substrate.

[0057] According to a third aspect of the present disclosure, a display device is provided, comprising the display panel as described in the first aspect.

[0058] The display panel provided by the present disclosure includes a first light-emitting layer and a second light-emitting layer, wherein the first light-emitting layer includes a first light-emitting device, the second light-emitting layer includes a second light-emitting device, the second light-emitting device is an organic light-emitting transistor, and the orthographic projections of the first light-emitting device and the second light-emitting device on the substrate do not overlap. The present disclosure combines the first light-emitting device driven by the pixel circuit with the second light-emitting device having a switching function, which helps to improve the color gamut and resolution of the display panel and improve the display effect of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0059] The above and other features and advantages of the present disclosure will become more apparent by describing in detail example embodiments thereof with reference to the attached drawings.

[0060] Figure 1 is a schematic diagram of a substrate structure in an exemplary embodiment of the present disclosure;

[0061] Figure 2 is a schematic diagram of a display panel structure in an exemplary embodiment of the present disclosure;

[0062] Figure 3 is a schematic diagram of a display panel structure in another exemplary embodiment of the present disclosure;

[0063] Figure 4 is a schematic diagram of a display panel structure in another exemplary embodiment of the present disclosure;

[0064] Figure 5 A schematic diagram of a display panel structure in another exemplary embodiment of the present disclosure;

[0065] Figure 6 is a schematic diagram of a signal line connection structure of a second light emitting device in an exemplary embodiment of the present disclosure;

[0066] Figure 7 is a schematic diagram of a pixel arrangement structure of a display panel in an exemplary embodiment of the present disclosure;

[0067] Figure 8 It is a schematic diagram of the pixel arrangement structure of a display panel in an exemplary embodiment of the present disclosure.

[0068] The main components in the figure are described as follows:

[0069] 1-substrate; 01-display area; 02-peripheral area; 2-driving circuit layer; 21-light shielding layer; 22-buffer layer; 231-active layer; 232-gate insulating layer; 233-first gate layer; 234-interlayer dielectric layer; 235-source and drain layer; 24-passivation layer; 25-planarization layer; 26-insulating layer; 27-second data line; 28-second power supply voltage line; 29-second scanning line; 3-first light-emitting layer; 30-first light-emitting device; 301-first electrode layer; 302-first light-emitting function layer; Energy layer; 303-second electrode layer; 31-pixel definition layer; 4-second light-emitting layer; 40-second light-emitting device; 401-second gate layer; 402-gate dielectric layer; 403-third electrode layer; 404-second light-emitting functional layer; 405-fourth electrode layer; 5-encapsulation layer; 6-quantum dot conversion layer; 61-isolation part; 62-light conversion part; 621-first light conversion part; 622-second light conversion part; 623-light-transmitting part; 7-color film layer; 71-shading part; 72-filtering part; 8-cover plate. DETAILED DESCRIPTION

[0070] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that the disclosure will be more comprehensive and complete and the concepts of the example embodiments are fully conveyed to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, many specific details are provided to provide a full understanding of the embodiments of the present disclosure.

[0071] In the drawings, the thickness of regions and layers may be exaggerated for clarity. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed description will be omitted.

[0072] The described features, structures or characteristics may be combined in one or more embodiments in any suitable manner. In the following description, many specific details are provided to provide a full understanding of the embodiments of the present disclosure. However, those skilled in the art will appreciate that the technical solutions of the present disclosure may be practiced without one or more of the specific details, or other methods, components, materials, etc. may be adopted. In other cases, known structures, materials or operations are not shown or described in detail to avoid blurring the main technical ideas of the present disclosure.

[0073] When a structure is “on” another structure, it may mean that the structure is integrally formed on the other structure, or that the structure is “directly” disposed on the other structure, or that the structure is “indirectly” disposed on the other structure via another structure.

[0074] The terms "a", "an", "the" are used to indicate the presence of one or more elements / components / etc.; the terms "including" and "having" are used to indicate an open-ended inclusive meaning and mean that there may be additional elements / components / etc. in addition to the listed elements / components / etc. The terms "first" and "second" etc. are used only as labels and are not intended to limit the quantity of their objects.

[0075] In the related technology, the color gamut and resolution of OLED display panels need to be further improved. For example, for QD-OLED (quantum dot-Organic Light-Emitting Diode) display panels, the light emitted by the blue organic light-emitting diode is usually converted into red and green light through a quantum dot conversion layer. However, due to the low efficiency of B-OLED (blue organic light-emitting diode) devices and low quantum dot conversion efficiency, the device has high power consumption, low color gamut, and low resolution.

[0076] like Figures 1 to 5 As shown, a display panel is provided in an embodiment of the present disclosure, including a base substrate 1, a driving circuit layer 2, a first light-emitting layer 3 and a second light-emitting layer 4, wherein the driving circuit layer 2 is arranged on one side of the base substrate 1, and includes a plurality of pixel circuits; the first light-emitting layer 3 is arranged on a side of the driving circuit layer 2 away from the base substrate 1, and the first light-emitting layer 3 includes a plurality of first light-emitting devices 30, and the plurality of pixel circuits are used to drive each first light-emitting device 30 to emit light in a one-to-one correspondence; the second light-emitting layer 4 is arranged on a side of the driving circuit layer 2 away from the base substrate 1, and the second light-emitting layer 4 includes a plurality of second light-emitting devices 40, and the second light-emitting devices 40 are organic light-emitting transistors; wherein the orthographic projection of the second light-emitting device 40 on the base substrate 1 does not overlap with the orthographic projection of the first light-emitting device 30 on the base substrate 1.

[0077] The display panel provided by the present disclosure includes a first light-emitting layer 3 and a second light-emitting layer 4, wherein the first light-emitting layer 3 includes a first light-emitting device 30, the second light-emitting layer 4 includes a second light-emitting device 40, the second light-emitting device 40 is an organic light-emitting transistor, and the orthographic projections of the first light-emitting device 30 and the second light-emitting device 40 on the base substrate 1 do not overlap. The present disclosure combines the first light-emitting device 30 driven by the pixel circuit with the second light-emitting device 40 having a switching function, which helps to improve the color gamut and resolution of the display panel and improve the display effect of the display panel.

[0078] The components of the display panel provided in the embodiment of the present disclosure are described in detail below with reference to the accompanying drawings:

[0079] like Figures 2 to 5 As shown, the embodiment of the present disclosure provides a display panel, which can be an OLED (Organic Light-Emitting Diode) display panel or a QD-OLED (quantumdot-Organic Light-Emitting Diode) display panel. The display panel includes a substrate 1, a driving circuit layer 2, a first light-emitting layer 3 and a second light-emitting layer 4. The driving circuit layer 2 is arranged on one side of the substrate 1, and includes a plurality of pixel circuits; the first light-emitting layer 3 is arranged on the side of the driving circuit layer 2 away from the substrate 1, and the first light-emitting layer 3 includes a plurality of first light-emitting devices 30, and the plurality of pixel circuits are used to drive each first light-emitting device 30 to emit light in a one-to-one correspondence; the second light-emitting layer 4 is arranged on the side of the driving circuit layer 2 away from the substrate 1, and the second light-emitting layer 4 includes a plurality of second light-emitting devices 40, and the second light-emitting devices 40 are organic light-emitting transistors.

[0080] The substrate substrate 1 may be a substrate substrate 1 of an inorganic material, or a substrate substrate 1 of an organic material. For example, in one embodiment of the present disclosure, the material of the substrate substrate 1 may be a glass material such as soda-lime glass, quartz glass, sapphire glass, or may be a metal material such as stainless steel, aluminum, nickel, etc. The substrate substrate 1 may also be a flexible substrate substrate 1. For example, in one embodiment of the present disclosure, the material of the substrate substrate 1 may be polyimide (PI). The substrate substrate 1 may also be a composite of multiple layers of materials. For example, in one embodiment of the present disclosure, the substrate substrate 1 may include a bottom film layer (Bottom Film), a pressure-sensitive adhesive layer, a first polyimide layer, and a second polyimide layer stacked in sequence.

[0081] like Figure 1As shown, the substrate 1 may include a display area 01 and a peripheral area 02 located outside the display area 01. The display area 01 may be provided with pixel circuits, light-emitting devices and other structures to display images. The peripheral area 02 may be provided with peripheral circuits and the like to drive the pixel circuits located in the display area 01.

[0082] like Figures 2 to 5 As shown, the driving circuit layer 2 is arranged on one side of the base substrate 1, and the driving circuit layer 2 includes a driving circuit for driving each first light-emitting device 30 to emit light. The driving circuit may include a pixel circuit and a peripheral circuit. The pixel circuit is arranged in the display area 01, and it can be a pixel circuit such as 7T1C, 7T2C, 6T1C or 6T2C. As long as it can drive the first light-emitting device 30 to emit light, its structure is not particularly limited here. The number of pixel circuits is the same as the number of first light-emitting devices 30, and they are connected to each first light-emitting device 30 in a one-to-one correspondence, so as to control each first light-emitting device 30 to emit light respectively. Among them, nTmC means that a pixel circuit includes n transistors (represented by the letter "T") and m capacitors (represented by the letter "C").

[0083] The peripheral circuit is located in the peripheral area 02 and is connected to the pixel circuit for inputting a driving signal to the pixel circuit so as to control the first light emitting device 30 to emit light. The peripheral circuit may include a gate driving circuit and a light emitting control circuit, and of course, may also include other circuits, and the specific structure of the peripheral circuit is not particularly limited here.

[0084] The driving circuit layer 2 may include multiple film layers. Taking the transistor in the driving circuit as a top-gate thin film transistor as an example, the driving circuit layer 2 may include an active layer 231, a gate insulating layer 232, a first gate layer 233, an interlayer dielectric layer 234 and a source-drain layer 235. Among them, the active layer 231 is arranged on one side of the substrate 1. The material of the active layer 231 may be polysilicon or IGZO (indium gallium zinc oxide), which may change the conductive properties at different positions through processes such as doping. The active layer 231 may include the active region of each transistor in the driving circuit. The gate insulating layer 232 is arranged on the side of the active layer 231 away from the substrate 1, and the gate insulating layer 232 covers the active layer 231. The gate insulating layer 232 may be a single film layer such as silicon nitride, silicon oxide, aluminum oxide, or a multi-film layer formed by a combination thereof. The gate insulating layer 232 may be formed by a deposition method, for example, a silicon oxide layer may be formed by a vapor phase chemical deposition method as a gate insulating material layer, and the gate insulating layer 232 may be formed after the gate insulating material layer is patterned. The first gate layer 233 is arranged on the side of the gate insulating layer 232 away from the substrate 1, and the first gate layer 233 may include the gate of each transistor in the pixel circuit. The first gate layer 233 may include a metal material or an alloy material to ensure its good electrical conductivity. Of course, the first gate layer 233 may also be made of a transparent conductive material, such as ITO (indium tin oxide), IZO (indium zinc oxide), etc. The interlayer dielectric layer 234 is arranged on the side of the first gate layer 233 away from the substrate 1, and the interlayer dielectric layer 234 covers the gate layer. The source and drain layer 235 is arranged on the side of the interlayer dielectric layer 234 away from the substrate 1, and the source and drain layer 235 may include the source and drain of each transistor, and the source and drain of each transistor are connected to their respective active areas. The source and drain layer 235 may include a metal material or an alloy material to ensure its good electrical conductivity. Of course, the source and drain layer 235 may also be made of a transparent conductive material, such as ITO (indium tin oxide), IZO (indium zinc oxide), etc.

[0085] In some embodiments, the driving circuit layer 2 further includes a light shielding layer 21 and a buffer layer 22, wherein the light shielding layer 21 is disposed between the base substrate 1 and the active layer 231, and the light shielding layer 21 is used to shield the active layer 231 from light, and the material of the light shielding layer 21 may be an opaque metal material or a metal alloy material. The orthographic projection of the active layer 231 on the base substrate 1 is located within the orthographic projection of the light shielding layer 21 on the base substrate 1, and further, the orthographic projection of the gate of each transistor in the pixel circuit on the base substrate 1 is located within the orthographic projection of the light shielding layer 21 on the base substrate 1. The light shielding layer 21 may be connected to the active layer 231, and further connected to the power supply voltage through the source or drain of each transistor in the pixel circuit, thereby reducing the impedance of the power supply line. The buffer layer 22 is disposed between the light shielding layer 21 and the active layer 231, and the buffer layer 22 covers the light shielding layer 21.

[0086] Furthermore, the driving circuit layer 2 further includes a planarization layer 25 , which is disposed on a side of the source and drain electrode layer 235 away from the base substrate 1 .

[0087] The first light-emitting layer 3 includes a plurality of first light-emitting devices 30, and the first light-emitting devices 30 may be organic light-emitting diodes. The first light-emitting device 30 may include a first electrode, a second electrode, and a light-emitting functional layer located between the first electrode and the second electrode. The first electrode is an anode, and the second electrode may be a cathode. The plurality of first light-emitting devices 30 are arranged in an array in the display area 01.

[0088] The first light-emitting layer 3 includes a first electrode layer 301, a pixel definition layer 31, a first light-emitting functional layer 302 and a second electrode layer 303. The first electrode layer 301 is arranged on the side of the driving circuit layer 2 away from the base substrate 1, and the first electrode layer 301 includes a plurality of first electrodes of the first light-emitting devices 30 arranged at intervals. The material of the first electrode layer 301 can be a metal material or an alloy material to ensure its good electrical conductivity. Of course, transparent conductive materials such as ITO (indium tin oxide), IZO (indium zinc oxide), etc. can also be used. The first electrode layer 301 can be a single-layer film structure or a multi-layer film layer stacked structure. For example, the first electrode layer 301 can be a multi-layer stacked structure formed by ITO / Ag / ITO, or Ti / Al / Ti.

[0089] The pixel definition layer 31 is disposed on a side of the first electrode layer 301 away from the base substrate 1, such as, on a side of the planarization layer 25 away from the base substrate 1. The pixel definition layer 31 can be used to divide the first light-emitting devices 30. The pixel definition layer 31 is provided with a plurality of openings, and the plurality of openings expose the first electrodes of the first light-emitting devices 30 one by one. Each opening is not larger than the first electrode of the first light-emitting device 30 exposed by it, that is, the range of any opening is located within the boundary of the first electrode of the corresponding first light-emitting device 30. The range defined by each opening is the range of a first light-emitting device 30. The shape of the opening, that is, the shape of the outline of the orthographic projection of the opening on the base substrate 1 can be a polygon, a smooth closed curve or other shapes, which are not specifically limited here. The thickness of the pixel definition layer 31 is 1-1.5 μm, the slope angle of the pixel definition layer between two adjacent openings is 20-40°, such as 30°, and along the arrangement direction of the first light-emitting device and the second light-emitting device, the width of the pixel definition layer between two adjacent openings is 10-15 μm, such as 12 μm, and the width of the opening is 70-90 μm, such as 84 μm. It should be noted that the slope angle here refers to the angle between the side surface of the pixel definition layer 31 close to the substrate 1 and the side wall of the pixel definition layer 31 between two adjacent openings.

[0090] The first light-emitting functional layer 302 is arranged on the side of the first electrode layer 301 away from the base substrate 1. The first light-emitting functional layer 302 includes a plurality of first light-emitting parts, and the plurality of first light-emitting parts are located in each opening one by one. The first light-emitting functional layer 302 may include a hole injection layer, a hole transport layer, a first light-emitting material layer, an electron transport layer and an electron injection layer stacked in sequence in a direction away from the driving backplane. The holes and electrons may be compounded into excitons in the light-emitting material layer, and the excitons may radiate photons, thereby generating visible light. The specific light-emitting principle is not described in detail here. The light-emitting color of the first light-emitting device 30 may be determined by the first light-emitting material layer, and different first light-emitting material layers may emit light of different colors. For example, the first light-emitting device 30 may emit red light, green light and blue light. Of course, the first light-emitting device 30 may also emit white light, which is not limited by the present disclosure.

[0091] The second electrode layer 303 is disposed on a side of the first light-emitting functional layer 302 away from the first light-emitting functional layer 302. The second electrode layer 303 includes a plurality of second electrodes of the first light-emitting devices 30 that are spaced apart. The orthographic projection of the second electrode on the base substrate 1 covers the orthographic projection of the opening on the base substrate 1. In some embodiments of the present disclosure, the first electrode and the second electrode of each first light-emitting device 30 are independent structures, that is, the first electrode layer 301 and the second electrode layer 303 corresponding to each first light-emitting device 30 are not connected to each other, but are independent structures spaced apart.

[0092] In some embodiments of the present disclosure, the orthographic projection of the second light emitting device 40 on the base substrate 1 at least partially overlaps with the orthographic projection of the pixel definition layer 31 on the base substrate 1. In this way, the area of ​​the pixel definition layer 31 can be utilized, which helps to improve the resolution and aperture ratio of the display panel. In addition, according to the display effect of the first light emitting device 30, the light color of the second light emitting device 40 can be adjusted to improve the color gamut of the display panel and enhance the display effect.

[0093] The second light emitting device 40 is an organic light emitting transistor (OLET) having a switching performance. The second light emitting device 40 includes a gate, a gate dielectric layer, a first electrode, a second electrode, and a light emitting functional layer located between the first electrode and the second electrode. The first electrode can be a source electrode or a drain electrode, and correspondingly, the second electrode can be a drain electrode or a source electrode.

[0094] The second light emitting device 40 may be a top-gate structure or a bottom-gate structure.

[0095] like Figure 2 and Figure 4As shown, in some embodiments, the second light emitting device 40 is a bottom gate structure. The second light emitting layer 4 includes a second gate layer 401 , a gate dielectric layer 402 , a third electrode layer 403 , a second light emitting functional layer 404 and a fourth electrode layer 405 .

[0096] The second gate layer 401 is arranged on the side of the driving circuit layer 2 away from the base substrate 1, and the second gate layer 401 includes a plurality of gates of the second light-emitting devices 40 distributed at intervals. The orthographic projection of the second gate layer 401 on the base substrate 1 does not overlap with the orthographic projection of the first electrode layer 301 on the base substrate 1. The material of the second gate layer 401 may include a metal material or an alloy material to ensure its good electrical conductivity. Of course, it may also include a transparent conductive material, such as ITO (indium tin oxide), IZO (indium zinc oxide), etc. The second gate layer 401 may be a single-layer film structure or a multi-layer film layer stacked structure, such as the second gate layer 401 may be a multi-layer stacked structure formed by ITO / Ag / ITO, or Ti / Al / Ti.

[0097] In one embodiment of the present disclosure, the second gate layer 401 is disposed in the same layer as the first electrode layer 301. In the present disclosure, the same layer means that they are made of the same material and the same process. Specifically, a conductive material layer can be formed on the side of the planarization layer 25 away from the base substrate 1, and then the conductive material layer is patterned to form the second gate layer 401 and the first electrode layer 301, and the second gate layer 401 and the first electrode layer 301 are not connected, so as to independently control the first light-emitting device 30 and the second light-emitting device 40.

[0098] The gate dielectric layer 402 is disposed on a side of the second gate layer 401 away from the base substrate 1, and the gate dielectric layer 402 covers the second gate layer 401. The material of the gate dielectric layer 402 may include a material with a high dielectric constant, such as AL2O3, TiO2, SiNx, SiO2, SiON, PMMA (polymethyl methacrylate), PEO (polyethylene oxide), etc. In some embodiments, the gate dielectric layer 402 is reused as the pixel definition layer 31. That is, the gate dielectric layer 402 and the pixel definition layer 31 are the same film layer, which plays the role of isolating the second gate layer 401 and the third electrode layer 403, and also plays the role of defining the range of the first light-emitting device 30. When the gate dielectric layer 402 is reused as the pixel definition layer 31, the shape and size of the gate dielectric layer 402 must meet the requirements of the display panel for the pixel definition layer 31. In this embodiment, the gate dielectric layer 402 and the pixel definition layer 31 share the same film layer, which helps to reduce the thickness of the display panel.

[0099] The third electrode layer 403 is arranged on the side of the gate dielectric layer 402 away from the substrate 1, and the third electrode layer 403 includes a plurality of first electrodes of the second light-emitting devices 40 distributed at intervals. In this embodiment, the first electrode of the second light-emitting device 40 can be a source electrode. The orthographic projection of the third electrode layer 403 on the substrate 1 overlaps at least partially with the orthographic projection of the pixel definition layer 31 on the substrate 1, such as being located within the orthographic projection of the pixel definition layer 31 on the substrate 1. The material of the third electrode layer 403 can be the same as or different from the material of the first electrode layer 301, and a metal material or an alloy material can be selected to ensure its good electrical conductivity. The third electrode layer 403 can be a single-layer film structure or a multi-layer film layer stacking structure, such as the third electrode layer 403 can be a multi-layer stacking structure formed by ITO / Ag / ITO, or Ti / Al / Ti. In addition, the material of the third electrode layer 403 can include an opaque conductive material, such as a low state density material such as carbon nanotubes, graphene, silver nanowires, etc., which helps to reduce the probability of side light leakage and reduce crosstalk between different pixels. The thickness of the third electrode layer 403 can be 100-500 nm, which will not shield the charge regulation function of the gate of the second light-emitting device 40 and can reduce the transmittance. It can be used as a pixel definition layer 31 together with the gate dielectric layer 402 to reduce the probability of crosstalk problems between adjacent pixels.

[0100] The second light-emitting functional layer 404 is arranged on the side of the third electrode layer 403 away from the base substrate 1. The second light-emitting functional layer 404 may include a hole injection layer, a hole transport layer, a second light-emitting material layer, an electron transport layer and an electron injection layer stacked in sequence in the direction away from the driving backplane. The holes and electrons can be recombined into excitons in the light-emitting material layer, and the excitons radiate photons to generate visible light. The specific light-emitting principle is not described in detail here. The light-emitting color of the second light-emitting device 40 can be determined by the second light-emitting material layer, and different second light-emitting material layers can emit light of different colors. For example, the second light-emitting device 40 can emit red light, green light and blue light. Of course, the first light-emitting device 30 can also emit white light, which is not limited by the present disclosure.

[0101] The fourth electrode layer 405 is disposed on a side of the second light-emitting functional layer 404 away from the base substrate 1, and the fourth electrode layer 405 includes the second electrodes of the plurality of second light-emitting devices 40. In some embodiments of the present disclosure, the first electrode and the second electrode of each second light-emitting device 40 are independent structures, that is, the third electrode layer 403 and the fourth electrode layer 405 corresponding to each second light-emitting device 40 are not connected to each other, but are independent structures arranged at intervals. The fourth electrode layer 405 can be disposed in the same layer as the second electrode layer 303, that is, the fourth electrode layer 405 and the second electrode layer 303 are made of the same material and the same process.

[0102] like Figure 3 and Figure 5As shown, in some other embodiments of the present disclosure, the second light-emitting device 40 is a top gate structure, and the second light-emitting layer 4 includes a third electrode layer 403, a second light-emitting functional layer 404, a fourth electrode layer 405, a gate dielectric layer 402 and a second gate layer 401 in sequence along the direction away from the base substrate 1.

[0103] The third electrode layer 403 is arranged on the side of the pixel definition layer 31 away from the substrate 1, and the third electrode layer 403 includes a plurality of first electrodes of the second light-emitting devices 40 distributed at intervals. The first electrode of the second light-emitting device 40 can be a source electrode or a drain electrode. For example, here, the first electrode can be a drain electrode. The orthographic projection of the third electrode layer 403 on the substrate substrate 1 overlaps at least partially with the orthographic projection of the pixel definition layer 31 on the substrate substrate 1, such as being located within the orthographic projection of the pixel definition layer 31 on the substrate substrate 1 or just completely overlapping. The thickness of the third electrode layer 403 can be 100 to 500 nm, which can reduce the transmittance, and can define the range of the first light-emitting device 30 together with the pixel definition layer 31, thereby reducing the probability of crosstalk problems between adjacent pixels. In this embodiment, the material of the third electrode layer 403 can refer to the selection of the material of the third electrode layer 403 in the above embodiment, and will not be described in detail here.

[0104] The second light-emitting functional layer 404 is arranged on the side of the third electrode layer 403 away from the base substrate 1. The fourth electrode layer 405 is arranged on the side of the second light-emitting functional layer 404 away from the base substrate 1, and the fourth electrode layer 405 includes a plurality of second electrodes of the second light-emitting devices 40. The second electrode of the second light-emitting device 40 can be a drain or a source. For example, here, the second electrode can be a source. In this embodiment, the film structure and material selection of the second light-emitting functional layer 404 and the fourth electrode layer 405 can refer to the above embodiment, and will not be described in detail here. In this embodiment, the fourth electrode layer 405 can also be arranged in the same layer as the second electrode layer 303.

[0105] The gate dielectric layer 402 is disposed on a side of the fourth electrode layer 405 away from the base substrate 1, and the gate dielectric layer 402 covers the fourth electrode layer 405. In this embodiment, the size design of the gate dielectric layer 402 may be different from that in the above embodiment, and is not reused as the pixel definition layer 31, and the thickness may be set to be thinner than that in the above embodiment. In this embodiment, the material of the gate dielectric layer 402 may refer to the above embodiment, and will not be described in detail here.

[0106] The second gate layer 401 is disposed on a side surface of the second gate layer 401 away from the base substrate 1, and the second gate layer 401 includes a plurality of gates of the second light-emitting devices 40 that are spaced apart. In this embodiment, the material of the second gate layer 401 may include a metal material or an alloy material to ensure its good electrical conductivity. Of course, it may also include a transparent conductive material, such as ITO (indium tin oxide), IZO (indium zinc oxide), etc.

[0107] In this embodiment, the first electrode layer 301 further includes a shielding electrode 407 , and the orthographic projection of the second light emitting device 40 on the base substrate 1 at least partially overlaps with the orthographic projection of the shielding electrode 407 on the base substrate to reduce the influence of the underlying pixel circuit on the light emitting signal of the second light emitting device 40 .

[0108] like Figures 2 to 5 As shown, in some embodiments of the present disclosure, the display panel also includes an encapsulation layer 5, which covers the surface of the first light-emitting layer 3 and the second light-emitting layer 4 away from the base substrate 1. The encapsulation layer 5 can be used to protect the first light-emitting layer 3 and the second light-emitting layer 4 and prevent external water and oxygen from corroding the first light-emitting device 30 and the second light-emitting device 40.

[0109] In some embodiments of the present disclosure, encapsulation can be achieved by thin-film encapsulation (TFE). Specifically, the encapsulation layer 5 may include a first inorganic layer, an organic layer, and a second inorganic layer, wherein the first inorganic layer covers the surface of the first light-emitting layer 3 and the second light-emitting layer 4 away from the base substrate 1, the organic layer may be arranged on the surface of the first inorganic layer away from the base substrate 1, and the boundary of the organic layer is limited to the inner side of the boundary of the first inorganic layer, the second inorganic layer covers the organic layer and the first inorganic layer not covered by the organic layer, and the intrusion of water and oxygen can be blocked by the second inorganic layer, and planarization is achieved by the flexible organic layer.

[0110] In the present disclosure, the light emitting colors of the first light emitting device 30 and the second light emitting device 40 can be set according to the display requirements of the display panel. For example, different first light emitting devices 30 among the plurality of first light emitting devices 30 can emit light of different colors, such as red light, green light and blue light. The second light emitting device 40 can be an auxiliary light emitting device to make up for the shortcomings of the first light emitting device 30, such as the second light emitting device 40 can emit blue light. Of course, the light emitting colors of the first light emitting device 30 and the second light emitting device 40 are not limited thereto.

[0111] like Figure 7 and Figure 8 As shown, in some embodiments, the first light-emitting device 30 and the second light-emitting device 40 can form different pixel arrangements according to their own arrangement order. For example, the first light-emitting device 30 and the second light-emitting device 40 can be used as independent sub-pixels, and each of the first light-emitting device 30 and the second light-emitting device 40 can emit light of different colors to form sub-pixels of different colors, such as red sub-pixels (R), green sub-pixels (G) and blue sub-pixels (B). The first light-emitting device 30 located in the opening of the pixel definition layer 31 and the second light-emitting device 40 located on the pixel definition layer 31 can be arranged to form pixels such as RGB BRGBGR BGRB RBGB. For example, Figure 8 As shown, the first light emitting device 30 located in the opening of the pixel definition layer 31 and the second light emitting device 40 located on the pixel definition layer 31 are arranged to form an RGB pixel. Figure 7 As shown, the first light emitting device 30 located in the opening of the pixel definition layer 31 and the second light emitting device 40 located on the pixel definition layer 31 are arranged to form a RBGB pixel.

[0112] like Figure 2 and Figure 3 As shown, of course, the first light emitting device 30 and the second light emitting device 40 can also emit white light. In this case, the display panel can also include a color filter layer 7, which is arranged on the side of the encapsulation layer 5 away from the base substrate 1. The color filter layer 7 includes a light shielding portion 71 and a plurality of filter portions 72 separated by the light shielding portion 71. The filter portions 72 are arranged one-to-one with the first light emitting device 30 or the second light emitting device 40 in a direction perpendicular to the base substrate 1. The light shielding portion 71 can be made of a light shielding material. For example, the material of the light shielding portion 71 can include a black resin. The light shielding portion 71 can be provided with through holes corresponding to the first light emitting device 30 or the second light emitting device 40 to define the range of the filter portion 72. The filter portion 72 can be made of a filter material. Each filter portion 72 only allows light of one color to pass through. At the same time, each filter portion 72 is arranged one-to-one in the through hole provided by each light shielding portion 71, so as to be separated by the light shielding portion 71. The light emitted by the first light emitting device 30 and the second light emitting device 40 can be emitted through the corresponding filter portion 72. Each first light emitting device 30 and the second light emitting device 40 and the corresponding filter 72 can form a light emitting unit, which can emit monochromatic light, such as red, blue or green. Of course, the light emitting unit can also emit white light, in which case the filter 72 can be made of a transparent material. Each light emitting unit forms a sub-pixel. As in the above embodiment, multiple light emitting units can be arranged to form pixels such as RGB BRG BGR BGRB RBGB.

[0113] like Figure 4 and Figure 5As shown, in some embodiments, the display panel further includes a quantum dot conversion layer 6, which is disposed between the encapsulation layer 5 and the color filter layer 7, and includes an isolation portion 61 and a plurality of light conversion portions 62 separated by the isolation portion 61. The isolation portion 61 may be made of a plastic material, and the isolation portion 61 may be provided with through holes corresponding to the first light emitting device 30 or the second light emitting device 40 one by one to define the range of the light conversion portion 62. The plurality of light conversion portions 62 are arranged one by one corresponding to the first light emitting device 30 or the second light emitting device 40 in a direction perpendicular to the substrate 1, and at least some of the plurality of light conversion portions 62 contain quantum dot materials. Quantum dots are nano-scale semiconductors. By applying a certain electric field or light pressure to the nano-semiconductor material, they will emit light of a specific frequency, and the frequency of the emitted light will change with the change of the size of the semiconductor, so the color of the light emitted by the semiconductor can be controlled by adjusting the size of the nano-semiconductor.

[0114] In some embodiments of the present disclosure, the plurality of light conversion parts 62 include a plurality of first light conversion parts 621 and a plurality of second light conversion parts 622, wherein the first light conversion part 621 is used to convert the light emitted by the first light emitting device 30 or the second light emitting device 40 into a first color. The second light conversion part 622 is used to convert the light emitted by the first light emitting device 30 or the second light emitting device 40 into a second color. The specific color selection of the first color and the second color can be set according to actual conditions, such as the first color can be green and the second color can be red, but is not limited thereto. For example, the first light emitting device 30 and the second light emitting device 40 can emit blue light, the first light conversion part 621 can convert the blue light into green light, and the second light conversion part 622 can convert the blue light into red light.

[0115] In one embodiment, the plurality of light conversion parts 62 further include a plurality of third light conversion parts for converting the light emitted by the first light emitting device 30 or the second light emitting device 40 into a third color. The third color may be blue.

[0116] In another embodiment, the plurality of light conversion parts 62 further include a plurality of light-transmitting parts 623 for transmitting light emitted by the first light-emitting device 30 or the second light-emitting device 40. The light-transmitting parts 623 may contain scattering particles. For example, the first light-emitting device 30 or the second light-emitting device 40 may emit blue light, and the light-transmitting parts 623 may transmit the blue light.

[0117] In the present disclosure, the color of the light converted by the light conversion unit 62 is the same as the color of the light that can be transmitted by its corresponding filter unit 72. For example, if the color of the light converted by the first light conversion unit 621 is the first color, such as green, then its corresponding filter unit 72 can transmit the light of the first color, such as green light. In this embodiment, each first light-emitting device 30 or second light-emitting device 40, together with the corresponding light conversion unit 62 and filter unit 72, forms a light-emitting unit, which can emit monochromatic light, such as red, blue or green. Each light-emitting unit forms a sub-pixel. As in the above embodiment, multiple light-emitting units can be arranged to form pixels such as RGB BRG BGR BGRB RBGB.

[0118] like Figures 2 to 5 As shown, in some embodiments of the present disclosure, the display panel further includes a cover plate 8, which is disposed on a side of the color filter layer 7 away from the base substrate 1. The cover plate 8 can be made of a transparent material.

[0119] In the present disclosure, the driving circuit layer 2 further includes a first scan line, a second scan line 29, a first data line, a second data line 27, a first power supply voltage line, and a second power supply voltage line 28, wherein the first scan line is used to provide a first gate drive signal to the pixel circuit, specifically, it can be used to provide a gate drive signal to the gate of the driving transistor in the pixel circuit. The second scan line 29 is used to provide a second gate drive signal to the gate of the second light-emitting device 40. The first data line is used to provide a first data signal to the pixel circuit to control the light-emitting brightness of the first light-emitting device 30, and the second data line 27 is used to provide a data signal to the first electrode of the second light-emitting device 40, such as providing a data signal to the source of the second light-emitting device 40 to control the light-emitting brightness of the second light-emitting device 40. The first power supply voltage line is used to provide a first voltage to the second electrode of the first light-emitting device 30. The second power supply voltage line 28 is used to provide a second voltage to the second electrode of the second light-emitting device 40. The first voltage and the second voltage can be Vss signals, and the sizes of the two can be the same or different.

[0120] In this embodiment, the first scan line can be distributed in the first gate layer 233, the first data line can be distributed in the source and drain layer 235, and the first power supply voltage line can also be distributed in the source and drain layer 235. Of course, the first scan line, the first data line and the first power supply voltage line can also be distributed in other conductive layers of the driving circuit layer 2 as long as they have good conductive properties.

[0121] like Figure 6As shown, the driving circuit layer 2 may further include at least one signal line layer, which is disposed between the source and drain electrode layer 235 and the planarization layer 25, and an insulating layer is disposed between the source and drain electrode layer 235 and the signal line layer, and between two adjacent signal line layers. The second scanning line 29, the second data line 27, and the second power supply voltage line 28 may be distributed in at least one signal line layer, and the disclosure does not specifically limit which signal line layer they are distributed in.

[0122] Further, the driving circuit layer 2 further includes a third power supply voltage line and a fourth power supply voltage line, wherein the third power supply voltage line is used to provide a third voltage to the pixel circuit, and the fourth power supply voltage line is used to provide a fourth voltage to the first electrode of the second light-emitting device 40, and the third voltage and the fourth voltage can be Vdd signals, and the two can be the same or different in size. The third power supply voltage line can be distributed in the source and drain layer 235, and the fourth power supply voltage line can be distributed in the signal line layer, but is not limited thereto.

[0123] like Figures 2 to 5 As shown, the present disclosure also provides a method for manufacturing a display panel, comprising:

[0124] Step S100, providing a substrate 1,

[0125] Step S200, forming a driving circuit layer 2 on one side of the base substrate 1, wherein the driving circuit layer 2 includes a plurality of pixel circuits;

[0126] Step S300, forming a first light-emitting layer 3 and a second light-emitting layer 4 on a side of the driving circuit layer 2 away from the base substrate 1, wherein the first light-emitting layer 3 includes a plurality of first light-emitting devices 30, and a plurality of pixel circuits are used to drive each first light-emitting device 30 to emit light in a one-to-one correspondence, and the second light-emitting layer 4 includes a plurality of second light-emitting devices 40, and the second light-emitting devices 40 are organic light-emitting transistors;

[0127] The orthographic projection of the second light emitting device 40 on the base substrate 1 does not overlap with the orthographic projection of the first light emitting device 30 on the base substrate 1 .

[0128] like Figure 2 and Figure 4 As shown, in some embodiments of the present disclosure, step S200, forming the first light-emitting layer 3 and the second light-emitting layer 4 on the side of the driving circuit layer 2 away from the base substrate 1 includes:

[0129] Step S210, forming a first conductive material layer on a side of the driving circuit layer 2 away from the base substrate 1, patterning the first conductive material layer to form a first electrode layer 301 and a second gate layer 401, wherein the first electrode layer 301 includes a plurality of first electrodes of the first light-emitting devices 30 distributed at intervals, and the second gate layer 401 includes a plurality of gates of the second light-emitting devices 40 distributed at intervals;

[0130] In step S220, a high dielectric constant material layer is formed on the side of the first electrode layer 301 and the third electrode layer 403 away from the base substrate 1, and the high dielectric constant material layer is patterned to form a gate dielectric layer 402. The gate dielectric layer 402 is reused as a pixel definition layer 31. The pixel definition layer 31 includes a plurality of openings, each opening correspondingly exposes the first electrode of each first light-emitting device 30, and the orthographic projection of the gate dielectric layer 402 on the base substrate 1 can cover the orthographic projection of the second gate layer 401 on the base substrate 1.

[0131] In step S230, a second conductive material layer is formed on a side of the gate dielectric layer 402 away from the base substrate 1, and the second conductive material layer is patterned to form a third electrode layer 403, wherein the third electrode layer 403 includes a plurality of first electrodes of the second light-emitting devices 40 that are spaced apart from each other, and an orthographic projection of the third electrode layer 403 on the base substrate 1 at least partially overlaps with an orthographic projection of the gate dielectric layer 402 on the base substrate 1.

[0132] Step S240, forming a light-emitting functional layer on the side of the first electrode layer 301 and the third electrode layer 403 away from the base substrate 1, and patterning the light-emitting functional layer to form a first light-emitting functional layer 302 and a second light-emitting functional layer 404. The first light-emitting functional layer 302 is located in each opening of the pixel definition layer 31, and the orthographic projection of the second light-emitting functional layer 404 on the base substrate 1 at least partially overlaps with the orthographic projection of the third electrode layer 403 on the base substrate 1.

[0133] In step S250, a third conductive material layer is formed on the side of the first light-emitting functional layer 302 and the second light-emitting functional layer 404 away from the base substrate 1, and the third conductive material layer is patterned to form a second electrode layer 303 and a fourth electrode layer 405, wherein the second electrode layer 303 includes a plurality of second electrodes of the first light-emitting devices 30 distributed at intervals, and the fourth electrode layer 405 includes a plurality of second electrodes of the second light-emitting devices 40 distributed at intervals.

[0134] In this embodiment, the specific structural relationship of each film layer can be referred to Figure 2 and Figure 4 The illustrated embodiments are not described in detail here.

[0135] like Figure 3 and Figure 5 As shown, in some other embodiments of the present disclosure, step S200, forming the first light-emitting layer 3 and the second light-emitting layer 4 on the side of the driving circuit layer 2 away from the base substrate 1, includes:

[0136] Step S210, forming a first conductive material layer on a side of the driving circuit layer 2 away from the base substrate 1, patterning the first conductive material layer to form a first electrode layer 301, wherein the first electrode layer 301 includes a plurality of first electrodes of the first light emitting devices 30 distributed at intervals;

[0137] In step S220 , a pixel definition material layer is formed on a side of the first electrode layer 301 away from the base substrate 1 , and the pixel definition material layer is patterned to form a pixel definition layer 31 . The pixel definition layer 31 includes a plurality of openings, and each opening exposes the first electrode of each first light emitting device 30 in a one-to-one correspondence.

[0138] In step S230, a second conductive material layer is formed on a side of the pixel definition layer 31 away from the base substrate 1, and the second conductive material layer is patterned to form a third electrode layer 403, wherein the third electrode layer 403 includes a plurality of first electrodes of the second light-emitting devices 40 that are spaced apart from each other, and an orthographic projection of the third electrode layer 403 on the base substrate 1 at least partially overlaps with an orthographic projection of the pixel definition layer 31 on the base substrate 1.

[0139] Step S240, forming a light-emitting functional layer on the side of the first electrode layer 301 and the third electrode layer 403 away from the base substrate 1, and patterning the light-emitting functional layer to form a first light-emitting functional layer 302 and a second light-emitting functional layer 404. The first light-emitting functional layer 302 is located in each opening of the pixel definition layer 31, and the orthographic projection of the second light-emitting functional layer 404 on the base substrate 1 at least partially overlaps with the orthographic projection of the third electrode layer 403 on the base substrate 1.

[0140] Step S250, forming a third conductive material layer on a side of the first light-emitting functional layer 302 and the second light-emitting functional layer 404 away from the base substrate 1, patterning the third conductive material layer to form a second electrode layer 303 and a fourth electrode layer 405, wherein the second electrode layer 303 includes a plurality of second electrodes of the first light-emitting devices 30 distributed at intervals, and the fourth electrode layer 405 includes a plurality of second electrodes of the second light-emitting devices 40 distributed at intervals;

[0141] In step S260, a high dielectric constant material layer is formed on a side of the fourth electrode layer 405 away from the base substrate 1, and the high dielectric constant material layer is patterned to form a gate dielectric layer 402. The orthographic projection of the gate dielectric layer 402 on the base substrate 1 can cover the orthographic projection of the fourth electrode layer 405 on the base substrate 1.

[0142] Step S270, forming a fourth conductive material layer on the side of the gate dielectric layer 402 away from the base substrate 1, and patterning the fourth conductive material layer to form a second gate layer 401. The second gate layer 401 includes a plurality of gates of the second light emitting devices 40 distributed at intervals.

[0143] In this embodiment, the specific structural relationship of each film layer can be referred to Figure 3 and Figure 5 The embodiments shown are shown and will not be described in detail here.

[0144] The present disclosure also provides a display device, including a display panel, which can be a display panel of any of the above embodiments, and its specific structure and beneficial effects can refer to the embodiments of the display panel above, which will not be repeated here. The display device of the present disclosure can be an electronic device such as a mobile phone, a tablet computer, a television, etc., which will not be listed one by one here.

[0145] It should be noted that, although the steps of the method in the present disclosure are described in a specific order in the drawings, this does not require or imply that the steps must be performed in the specific order, or that all the steps shown must be performed to achieve the desired results. Additionally or alternatively, some steps may be omitted, multiple steps may be combined into one step, and / or one step may be decomposed into multiple steps, etc., which shall all be considered as part of the present disclosure.

[0146] It should be understood that the present disclosure does not limit its application to the detailed structure and arrangement of the components proposed in this specification. The present disclosure can have other embodiments and can be implemented and executed in a variety of ways. The aforementioned variations and modifications fall within the scope of the present disclosure. It should be understood that the present disclosure disclosed and defined in this specification extends to all alternative combinations of two or more individual features mentioned or apparent in the text and / or the drawings. All these different combinations constitute multiple alternative aspects of the present disclosure. The embodiments of this specification illustrate the best mode known for implementing the present disclosure and will enable those skilled in the art to utilize the present disclosure.

Claims

1. A display panel, characterized in that: include: Substrate substrate, A driving circuit layer, disposed on one side of the base substrate, comprising a plurality of pixel circuits; A first light-emitting layer is provided on a side of the driving circuit layer away from the base substrate, the first light-emitting layer comprises a plurality of first light-emitting devices, and the plurality of pixel circuits are used to drive each of the first light-emitting devices to emit light in a one-to-one correspondence; A second light-emitting layer is provided on a side of the driving circuit layer away from the base substrate, the second light-emitting layer comprises a plurality of second light-emitting devices, and the second light-emitting devices are organic light-emitting transistors; Wherein, the first light-emitting layer includes: a first electrode layer, a pixel definition layer, a first light-emitting functional layer and a second electrode layer; the first electrode layer is arranged on a side of the driving circuit layer away from the base substrate, and the first electrode layer includes a plurality of first electrodes of the first light-emitting devices distributed at intervals; the pixel definition layer is arranged on a side of the first electrode layer away from the base substrate, and the pixel definition layer is provided with a plurality of openings, and the plurality of openings expose the first electrodes of the first light-emitting devices one by one; the first light-emitting functional layer is arranged on a side of the first electrode layer away from the base substrate, and the first light-emitting functional layer includes a plurality of first light-emitting portions, and the plurality of first light-emitting portions are located in the openings one by one; the second electrode layer is arranged on a side of the first light-emitting functional layer away from the first light-emitting functional layer, and the second electrode layer includes a plurality of second electrodes of the first light-emitting devices; the orthographic projection of the second light-emitting device on the base substrate at least partially overlaps with the orthographic projection of the pixel definition layer on the base substrate, and the orthographic projection of the second light-emitting device on the base substrate does not overlap with the orthographic projection of the first light-emitting device on the base substrate.

2. The display panel according to claim 1, characterized in that: The second light-emitting layer comprises: A second gate layer is provided on a side of the driving circuit layer away from the base substrate, the second gate layer comprising a plurality of gates of the second light emitting devices distributed at intervals; A gate dielectric layer, disposed on a side of the second gate layer away from the base substrate, the gate dielectric layer covering the second gate layer; A third electrode layer is provided on a side of the gate dielectric layer away from the base substrate, and the third electrode layer includes a plurality of first electrodes of the second light-emitting devices distributed at intervals; A second light-emitting functional layer is provided on a side of the third electrode layer away from the base substrate; The fourth electrode layer is arranged on a side of the second light-emitting functional layer away from the base substrate, and the fourth electrode layer includes a plurality of second electrodes of the second light-emitting devices.

3. The display panel according to claim 2, characterized in that: The second gate layer is disposed in the same layer as the first electrode layer, and an orthographic projection of the second gate layer on the base substrate does not overlap with an orthographic projection of the first electrode layer on the base substrate; The gate dielectric layer is reused as the pixel definition layer.

4. The display panel according to claim 1, characterized in that: The second light-emitting layer comprises: A third electrode layer is provided on a side of the pixel definition layer away from the substrate, the third electrode layer comprising a plurality of first electrodes of the second light emitting devices distributed at intervals; A second light-emitting functional layer is provided on a side of the third electrode layer away from the base substrate; a fourth electrode layer, disposed on a side of the second light-emitting functional layer away from the base substrate, the fourth electrode layer comprising a plurality of second electrodes of the second light-emitting devices; A gate dielectric layer, disposed on a side of the fourth electrode layer away from the base substrate, the gate dielectric layer covering the fourth electrode layer; The second gate layer is arranged on a surface of the second gate layer away from the base substrate, and the second gate layer includes a plurality of gates of the second light-emitting devices that are distributed at intervals.

5. The display panel according to claim 2 or 4, characterized in that: The thickness of the third electrode layer is 100-500 nm, and the material of the third electrode layer includes an opaque material.

6. The display panel according to claim 2 or 4, characterized in that: The fourth electrode layer is disposed on the same layer as the second electrode layer.

7. The display panel according to claim 1, characterized in that: The thickness of the pixel definition layer is 1-1.5 μm, the slope angle of the pixel definition layer between two adjacent openings is 20-40°, and along the arrangement direction of the first light-emitting device and the second light-emitting device, the width of the pixel definition layer between two adjacent openings is 10-15 μm, and the width of the opening is 70-90 μm.

8. The display panel according to claim 1, characterized in that: The display panel also includes: An encapsulation layer, provided on a side of the first light-emitting layer and the second light-emitting layer away from the base substrate; The color filter layer is arranged on a side of the packaging layer away from the base substrate. The color filter layer includes a shading portion and a plurality of filter portions separated by the shading portion. The filter portions are arranged one-to-one with the first light-emitting device or the second light-emitting device in a direction perpendicular to the base substrate.

9. The display panel according to claim 8, characterized in that: The display panel also includes: A quantum dot conversion layer is arranged between the encapsulation layer and the color film layer, the quantum dot conversion layer includes an isolation part and a plurality of light conversion parts separated by the isolation part, the light conversion parts are arranged one-to-one with the first light-emitting device or the second light-emitting device in a direction perpendicular to the substrate, and the light conversion parts and the filter parts are arranged one-to-one with each other in a direction perpendicular to the substrate, and at least some of the multiple light conversion parts contain quantum dot materials.

10. The display panel according to claim 9, characterized in that: The plurality of light conversion parts include: A plurality of first light conversion parts, used for converting light emitted by the first light emitting device or the second light emitting device into a first color; A plurality of second light conversion parts are used to convert the light emitted by the first light emitting device or the second light emitting device into a second color.

11. The display panel according to claim 10, characterized in that: The plurality of light conversion parts further include: a plurality of third light conversion parts, used for converting the light emitted by the first light emitting device or the second light emitting device into a third color; or a plurality of light-transmitting portions, for allowing light emitted by the first light-emitting device or the second light-emitting device to pass through.

12. The display panel according to claim 2 or 4, characterized in that: The driving circuit layer also includes: A first scanning line, used for providing a first gate driving signal to the pixel circuit; A second scan line, used for providing a second gate driving signal to the gate of the second light emitting device; A first data line, used for providing a first data signal to the pixel circuit; a second data line, used for providing a second data signal to the first electrode of the second light emitting device; a first power supply voltage line, used for providing a first voltage to the second electrode of the first light emitting device; The second power supply voltage line is used to provide a second voltage to the second electrode of the second light emitting device.

13. A method for manufacturing a display panel, characterized in that: include: providing a substrate substrate, forming a driving circuit layer on one side of the base substrate, wherein the driving circuit layer includes a plurality of pixel circuits; A first light-emitting layer and a second light-emitting layer are formed on a side of the driving circuit layer away from the base substrate, wherein the first light-emitting layer includes a plurality of first light-emitting devices, and the plurality of pixel circuits are used to drive the first light-emitting devices to emit light in a one-to-one correspondence, and the second light-emitting layer includes a plurality of second light-emitting devices, and the second light-emitting devices are organic light-emitting transistors; Wherein, the first light-emitting layer includes: a first electrode layer, a pixel definition layer, a first light-emitting functional layer and a second electrode layer; the first electrode layer is arranged on a side of the driving circuit layer away from the base substrate, and the first electrode layer includes a plurality of first electrodes of the first light-emitting devices distributed at intervals; the pixel definition layer is arranged on a side of the first electrode layer away from the base substrate, and the pixel definition layer is provided with a plurality of openings, and the plurality of openings expose the first electrodes of the first light-emitting devices one by one; the first light-emitting functional layer is arranged on a side of the first electrode layer away from the base substrate, and the first light-emitting functional layer includes a plurality of first light-emitting portions, and the plurality of first light-emitting portions are located in the openings one by one; the second electrode layer is arranged on a side of the first light-emitting functional layer away from the first light-emitting functional layer, and the second electrode layer includes a plurality of second electrodes of the first light-emitting devices; the orthographic projection of the second light-emitting device on the base substrate at least partially overlaps with the orthographic projection of the pixel definition layer on the base substrate, and the orthographic projection of the second light-emitting device on the base substrate does not overlap with the orthographic projection of the first light-emitting device on the base substrate.

14. A display device, characterized in that: Comprising a display panel as described in any one of claims 1-12.

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