Segmentation method

Abstract

The present disclosure provides a method including forming an interconnect assembly including a dielectric layer including an organic dielectric material and a redistribution line extending into the dielectric layer. The method also includes bonding a first package assembly and a second package assembly to the interconnect assembly, encapsulating the first package assembly and the second package assembly in a sealant, and pre-dicing the interconnect assembly using a blade to form a trench. The trench penetrates the interconnect assembly and extends partially into the sealant. The method also includes performing a singulation process to separate the first package assembly and the second package assembly into a first package and a second package, respectively.

Description

Technical Field

[0001] This disclosure relates to segmentation methods, and more particularly to segmentation methods for encapsulation. Background Technology

[0002] In integrated circuit packaging, multiple device dies can be bonded to a redistribution structure. These dies are then molded in a molding compound to form a reconstructed wafer. To separate the resulting packages from each other within the reconstructed wafer, a pre-dicing process can be performed using laser pre-dicing. A sizing process is then performed to form discrete packages. Summary of the Invention

[0003] Some embodiments of this disclosure provide a partitioning method comprising: forming an interconnect assembly including: a plurality of dielectric layers, wherein the dielectric layers include an organic dielectric material; and a plurality of redistribution lines extending into the dielectric layers; bonding a first encapsulation assembly and a second encapsulation assembly to the interconnect assembly; encapsulating the first encapsulation assembly and the second encapsulation assembly in a sealant; pre-cutting the interconnect assembly using a blade to form a trench, wherein the trench penetrates the interconnect assembly and extends partially into the sealant; and performing a partitioning process to separate the first encapsulation assembly and the second encapsulation assembly into a first package and a second package, respectively.

[0004] Other embodiments of this disclosure provide a segmentation method, including: forming a plurality of organic layers on a carrier; forming a plurality of redistribution lines in the organic layers; attaching a top bare crystal to the redistribution lines; distributing a bottom filler into a gap between the redistribution lines and the top bare crystal; applying a molding compound to the bottom filler and the organic layers; separating the carrier from the organic layers; and pre-cutting the organic layers and the molding compound with a blade.

[0005] Further embodiments of this disclosure provide a segmentation method comprising: molding a first device die and a second device die in a molding compound, wherein the molding compound includes a first substrate material and a plurality of first filler particles mixed in the first substrate material; performing a pre-cutting process using a blade, wherein the blade penetrates a plurality of polymer layers bonded to the molding compound and extends into the molding compound, and the blade cuts some of the first filler particles to form a plurality of partial particles; after the pre-cutting process, sawing through the molding compound to separate the first device die and the second device die into a first package and a second package; bonding the first package to a package assembly; and applying an underfill to a gap between the first package and the package assembly, wherein the underfill includes a second substrate material and a plurality of second filler particles mixed in the second substrate material, and wherein the underfill is in physical contact with the molding compound. Attached Figure Description

[0006] When with attachment Figure 1 When reading this document, the best understanding of all aspects of this disclosure can be obtained from the following detailed description. It is worth noting that, in accordance with industry standard practice, the various features are not drawn to scale. In fact, for clarity of discussion, the dimensions of the various features can be arbitrarily increased or decreased.

[0007] Figures 1 to 11 A cross-sectional view is shown at an intermediate stage in the packaging formation according to some embodiments.

[0008] Figures 12 to 14 A cross-sectional view is shown at an intermediate stage in the packaging formation according to some embodiments.

[0009] Figures 15 to 17 A cross-sectional view is shown at an intermediate stage in the packaging formation according to some embodiments.

[0010] Figure 18 An enlarged view of a portion of the package according to some embodiments is shown.

[0011] Figure 19 A pre-cutting process according to some embodiments is shown, wherein two pre-cuts are performed in the same scribe line.

[0012] Figure 20 A process flow for forming a package is shown according to some embodiments.

[0013] Explanation of reference numerals in the attached figures:

[0014] 20 carriers

[0015] 22 Release film

[0016] 24 Dielectric layers

[0017] 24-1 First Dielectric Layer

[0018] 24-2 Dielectric Layer

[0019] 24-3 Dielectric layer

[0020] 24-4 Dielectric layer

[0021] 26 Redistribution Line

[0022] 26-1 Redistribution Line

[0023] 26-2 Redistribution Line

[0024] 26-3 Redistribution Line

[0025] 32 Conductive Connector

[0026] 34 Redistribution Structure

[0027] 36. Encapsulated Components

[0028] 38. Encapsulated Components

[0029] 39 Conductive Connectors

[0030] 40 Bottom Filler

[0031] 42 Sealant

[0032] 42A Substrate Material

[0033] 42B filler particles

[0034] 44 Reconstructing the Wafer

[0035] 44′ Discrete Package

[0036] 45 carriers

[0037] 46 Release film

[0038] 54. Trench

[0039] 54BS flat bottom

[0040] 54SW sidewall

[0041] 56 blades

[0042] 60 recast layers

[0043] 60A Part

[0044] Part 60B

[0045] 61. Underlined

[0046] 64 Conductive Connectors

[0047] 66 Welding Area

[0048] 68 blades

[0049] 70 Packaged Components

[0050] 72 Bottom Filler

[0051] 72A Substrate Material

[0052] 72B filler particles

[0053] 74 package

[0054] 76 parts

[0055] 200 Process Flow

[0056] 202 process

[0057] 204 process

[0058] 206 process

[0059] 208 process

[0060] 210 process

[0061] 212 process

[0062] 214 Process

[0063] 216 process

[0064] 218 process

[0065] 220 process

[0066] 222 process

[0067] 224 process

[0068] 226 process Detailed Implementation

[0069] The following disclosure provides numerous different embodiments or examples for implementing various features of this disclosure. Specific examples of components and arrangements are described below to simplify this disclosure. Of course, these are merely examples and are not intended to be limiting. For example, in the following description, forming a first feature on or over a second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where additional features may be formed between the first and second features, such that the first and second features do not need to be in direct contact. Furthermore, reference numerals and / or letters may be repeated in various examples. Such repetition is for simplicity and clarity and does not in itself define the relationship between the various embodiments and / or configurations discussed.

[0070] Furthermore, for ease of description, spatially related terms such as “under,” “below,” “lower,” “overlapping,” and “above” are used here to describe the relationship between one element or feature and another element or feature as shown in the figure. In addition to the directions depicted in the figure, spatially relative terms are intended to cover different orientations of the device during use or operation. This device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein can be interpreted accordingly.

[0071] A method for pre-dicing a package and the resulting package are provided. According to some embodiments of this disclosure, a packaging process includes forming a redistribution structure that may include an organic material, bonding a device die to the redistribution structure, packaging the device die to form a reconstructed wafer, and pre-dicing the reconstructed wafer using a blade. A sawing process is then performed to separate the reconstructed wafer into a plurality of packages, each package including one of the device dies. By using a blade (instead of a laser) for the pre-dicing process, a recast layer formed due to the melting of the organic material is avoided. Since a recast layer can cause delamination in subsequent processes, delamination can be avoided by preventing the formation of the recast layer. The embodiments discussed herein provide examples for implementing or using the subject matter of this disclosure, and modifications that can be made while remaining within the contemplated scope of the different embodiments will be readily understood by those skilled in the art. In the various views and illustrative embodiments, the same reference numerals are used to denote the same elements. Although method embodiments may be discussed as being performed in a particular order, other method embodiments may be performed in any logical order.

[0072] Figures 1 to 11 A cross-sectional view is shown of an intermediate stage in package formation according to some embodiments of the present disclosure. The corresponding process is also schematically reflected in... Figure 20 The process flow shown is as follows.

[0073] Figure 1A carrier 20 and a release film 22 formed on the carrier 20 are shown. The carrier 20 may be a glass carrier, a silicon wafer, an organic carrier, etc. According to some embodiments, the carrier 20 may have a circular top-view shape. The release film 22 may be formed of a polymer-based material and / or an epoxy-based thermal-release material (e.g., a light-to-heat-conversion (LTHC) material) that is decomposable under radiation (e.g., a laser beam), allowing the carrier 20 to be debonded from an overlay structure to be formed in a subsequent process. According to some embodiments of this disclosure, the release film 22 is coated onto the carrier 20.

[0074] like Figures 1 to 3 As shown, a redistribution structure comprising multiple dielectric layers 24 and multiple redistribution lines (RDLs) 26 is formed above the release film 22. (Reference) Figure 1 The first dielectric layer 24-1, which is one of the dielectric layers 24, is formed on the release film 22. The corresponding process is as follows: Figure 20 The process flow 200 shown is referred to as process 202. According to some embodiments of this disclosure, the dielectric layer 24-1 is formed of or comprises an organic material, which may be a polymer. The organic material may also be a photosensitive material. For example, the dielectric layer 24-1 may comprise or be formed of polyimide, polybenzoxazole (PBO), benzocyclobutene (BCB), etc.

[0075] Redistribution line (RDL) 26 (designated 26-1) is formed on dielectric layer 24-1. The corresponding process is described in... Figure 20 The process flow 200 shown is referred to as process 204. The formation of the redistribution line 26-1 may include forming a metal seed layer (not shown) over the dielectric layer 24-1, forming a patterned mask (not shown) (e.g., photoresist on the metal seed layer), and then performing a metal electroplating process on the exposed metal seed layer. The patterned mask and the portion of the metal seed layer covered by the patterned mask are then removed, leaving... Figure 1The redistribution line 26-1 is shown. According to some embodiments of this disclosure, the metal seed layer comprises a titanium layer and a copper layer on the titanium layer. The metal seed layer can be formed using, for example, physical vapor deposition (PVD) or a similar process. Electroplating can be performed using, for example, a chemical electroplating process.

[0076] Figure 2 The formation of additional dielectric layers 24 (e.g., including 24-2, 24-3, and 24-4) and additional redistribution lines 26 (e.g., including 26-2 and 26-3) is shown. The corresponding processes are as follows: Figure 20 The process flow 200 shown is designated as process 206. According to some embodiments, a dielectric layer 24-2 is first formed on the redistribution line 26-1. The bottom surface of the dielectric layer 24-2 contacts the redistribution line 26-1 and the top surface of the dielectric layer 24-1. The dielectric layer 24-2 may be formed of or comprise an organic dielectric material, which may be a polymer. For example, the dielectric layer 24-2 may comprise a photosensitive material such as polybenzoxazole (PBO), polyimide, benzocyclobutene (BCB), etc. The dielectric layer 24-2 is then patterned to form via openings therein (occupied by the via portions of the redistribution line 26-2). Thus, some portions of the redistribution line 26-1 are exposed through the openings in the dielectric layer 24-2.

[0077] Next, a redistribution line 26-2 is formed on dielectric layer 24-2 to connect to redistribution line 26-1. Redistribution line 26-2 includes via portions extending into openings in dielectric layer 24-2, and trace portions (metal line portions) above dielectric layer 24-2. According to some embodiments, the formation of redistribution line 26-2 may include depositing a blanket metal seed layer extending into the via opening, and forming and patterning an electroplating mask (e.g., photoresist), wherein openings are formed in the electroplating mask and directly on the via opening. An electroplating process is then performed to electroplat a metal material that completely fills the via opening and has portions above the top surface of dielectric layer 24-2. The electroplating mask is then removed, followed by an etching process to remove exposed portions of the metal seed layer previously covered by the electroplating mask. The remaining portions of the metal seed layer and the electroplated metal material constitute redistribution line 26-2. The redistribution line 26-2 includes a redistribution line (also called a trace or trace portion) and a via portion (also called a via). The trace portion is above dielectric layer 24-2, while the via portion is within dielectric layer 24-2. Each via may have a tapered profile, where the upper portion is wider than the corresponding lower portion.

[0078] The seed metal layer and the plating material can be formed from the same material or different materials. For example, the seed metal layer may include a titanium layer and a copper layer above the titanium layer. The electroplated metal material in redistribution line 26-2 may include metals or metal alloys, including copper, aluminum, tungsten, etc., or alloys thereof.

[0079] After forming redistribution line 26-2, more dielectric layers and corresponding redistribution lines can be formed, wherein the upper redistribution line is above and falls on the corresponding lower redistribution line. For example, Figure 2 Dielectric layers 24-3 and 24-4, and redistribution line 26-3 are shown as an example. It will be understood that more dielectric layers and redistribution lines can be formed. The materials for dielectric layers 24-3 and 24-4 can be selected from the same (or different) group of candidate materials as dielectric layers 24-1 and 24-2. For example, dielectric layers 24-3 and 24-4 can be formed from organic materials, such as polymers of polyimide, polybenzoxazole (PBO), etc. Redistribution line 26-3 can also be formed from a similar material to redistribution lines 26-1 and 26-2 using a similar formation process.

[0080] refer to Figure 3 After forming a top dielectric layer such as dielectric layer 24-2, a conductive connector 32 is formed. The corresponding process is as follows: Figure 20The process flow 200 shown is referred to as process 208. The conductive connector 32 may include or be formed from metal pads, metal pillars, under-bump-metallurgies (UBM), micro-bumps, solder regions, and / or the like. The formation of the conductive connector 32 may also be similar to the formation of the redistribution line 26-2, including patterning a top dielectric layer to expose the underlying redistribution line, forming a metal seed layer, forming a patterned plating mask, performing one or more plating processes, removing the plating mask, and etching the metal seed layer. When the conductive connector 32 includes solder regions, the solder regions may be plated after the plating process used to form the metal pillars, plated on the metal pillars, and then reflowed.

[0081] Throughout this description, the dielectric layers including 24-1 to 24-4 are collectively referred to as dielectric layer 24, and the redistribution lines including redistribution lines 26-1, 26-2, and 26-3 are collectively referred to as redistribution lines 26. Dielectric layer 24, redistribution lines 26, and conductive connector 32 together form redistribution structure 34, which may alternatively be referred to as interconnect component 34 or organic interposer 34.

[0082] Figure 4 The bonding between package components 36 and interconnect components 34 is shown. The corresponding process is illustrated as follows. Figure 20 Process 210 in the illustrated process flow 200. According to some embodiments, a conductive connector 39, which is a surface feature of the interconnect component 34, can be bonded to a conductive connector 32 via solder regions 38. The conductive connector 39 can be under-bump metal, a metal post, a bonding pad, etc. According to an alternative embodiment, the conductive connector 39 is a metal post, and the conductive connector 39 is bonded to the conductive connector 32 via direct metal-to-metal bonding, without solder regions between them.

[0083] According to some embodiments, encapsulation component 36 includes multiple groups of encapsulation components, which are identical to each other. Each group can be a single-component group or a multi-component group. For example, Figure 4An example is shown where each group includes two package components 36. According to some embodiments, package components 36 include logic dies, which may be central processing unit (CPU) dies, graphics processing unit (GPU) dies, mobile application dies, microcontroller unit (MCU) dies, input-output (I / O) dies, baseband (BB) dies, application processor (AP) dies, etc. Package components 36 may also include memory dies, such as dynamic random access memory (DRAM) dies, static random access memory (SRAM) dies, etc. Memory dies may be discrete memory dies or may be in the form of a stack of dies comprising multiple stacks of memory dies. Package components 36 may also include system-on-chip (SOC) dies.

[0084] refer to Figure 5 The bottom filler 40 is dispensed into the gaps between the package component 36 and the interconnect component 34. The corresponding process is illustrated as follows. Figure 20Process 212 in the illustrated process flow 200. Underfill 40 may also be dispensed between adjacent package assemblies 36 belonging to the same group of package assemblies. According to some embodiments, underfill 40 comprises a base material and filler particles mixed in the base material. The base material may be a resin, epoxy resin, and / or polymer. Some example base materials include epoxy-amine, epoxy anhydride, epoxy phenol, etc., or combinations thereof. The filler particles may be formed of a dielectric material and may include silica, alumina, boron nitride, etc., and may be in the form of spherical particles. Underfill 40 is dispensed in a flowable form and then cured. According to an alternative embodiment, underfill 40 is formed of a non-conductive film, which is first dispensed onto the interconnect assembly 34, and the package assembly 36 is pressed against the interconnect assembly 34 such that the conductive connector in the package assembly 36 penetrates the non-conductive film to contact the conductive connector 32.

[0085] Next, as Figure 6 As shown, the encapsulation component 36 is encapsulated in an encapsulant 42. The corresponding process is described in... Figure 20 The process flow 200 shown is referred to as process 214. Sealant 42 may include molding compound, molding underfill, epoxy resin, and / or resin. The molding compound may include a base material ( Figure 18 The substrate 42A (which can be a polymer, resin, epoxy resin, etc.) and filler particles 42B in the substrate 42A. The filler particles 42B can be dielectric particles such as SiO2, Al2O3, and silicon dioxide, and can have a spherical shape. Furthermore, the spherical filler particles can have the same or different diameters. A distinguishable interface may exist between the bottom filler 40 and the sealant 42.

[0086] In subsequent processes, planarization processes such as Chemical Mechanical Polishing (CMP) or Mechanical Grinding are performed to grind the sealant 42. The package assembly 36 may be exposed due to the planarization process. For example, when the package assembly 36 includes a semiconductor substrate, the semiconductor substrate may be exposed. Throughout the description, the structure on the release film 22 (including the redistribution assembly 34, the package assembly 36, the underfill 40, and the sealant 42) is referred to as the reconstructed wafer 44.

[0087] Figure 7 This illustrates the carrier switch process. The corresponding process is as follows: Figure 20 The process flow 200 is shown as process 216. First, a second carrier 45 is attached to the side of the reconstructed wafer 44 opposite to the carrier 20. A release film 46 (which may also include a thermal release film such as photothermal conversion (LTHC)) is used to attach the carrier 45 to the reconstructed wafer 44. The reconstructed wafer 44 is then peeled off from the carrier 20, for example, by projecting an ultraviolet light or laser beam that penetrates the carrier 20 onto the release film 22. The release film 22 decomposes under the heat of the ultraviolet light or laser beam. The reconstructed wafer 44 can then be removed from the carrier 20.

[0088] Figure 8 The formation of the conductive connector 64 and the soldering area 66 is shown. The corresponding process is as follows: Figure 20 The process flow 200 shown is illustrated as process 218. According to some embodiments, the forming process includes patterning a top dielectric layer (e.g., dielectric layer 24-1) in the interconnect assembly 34 to expose a portion of the lower layer of the redistribution lines (e.g., redistribution lines 26-1), depositing a metal seed layer, forming a patterned plating mask (e.g., photoresist), and plating the conductive connector 64. The solder region 66 may also be plating when it is to be formed. The patterned plating mask is then removed, followed by an etching process to remove the exposed portions of the metal seed layer. A reflow process may be performed to reflow the solder region 66.

[0089] Figure 9 The diagram shows some pre-cut sections on the top of the interconnect assembly 34 and sealant 42. The corresponding process is illustrated as follows. Figure 20Process 220 in the process flow 200 shown. Therefore, trenches 54 are formed by a pre-dicing process. Trenches 54 penetrate the dielectric layer 24 in the interconnect assembly 34 and extend to the top of the sealant 42. Trenches 54 are formed within corresponding scribe lines 61 of the reconstructed wafer 44. When viewed from a top view of the reconstructed wafer 44, a plurality of trenches 54 are formed, a first plurality of trenches 54 parallel to a first direction, and a second plurality of trenches 54 parallel to a second direction perpendicular to the first direction.

[0090] According to some embodiments, a pre-cut is performed using a blade 56, which has a cutting surface designed according to the desired shape of the groove 54. For example, in... Figure 9 In the example shown, each trench 54 has a shallow U-shape, including opposing sidewalls and a curved bottom surface connected to the opposing straight sidewalls. The sidewalls can be straight and can be vertical or sloping. The sidewalls can also be continuously and smoothly curved. When the sidewalls are vertical and straight, the vertical and straight sidewalls form the upper portion of the sidewalls of dielectric layer 24, while the lower portion of the sidewalls of dielectric layer 24 is curved. According to some embodiments, the top portion of the sidewalls of dielectric layer 24 facing the trench 54 is vertical and straight. The curved bottom surface can be circular and can fit a portion of a circle. According to some embodiments, the curved bottom surface begins to curve in dielectric layer 24 and the curve extends into sealant 42. According to an alternative embodiment, when the sidewalls are straight, the straight sidewalls extend into sealant 42. Smooth and continuous sidewalls and bottom surfaces prevent stress concentration at the interface between interconnect assembly 34 and sealant 42. This, in turn, reduces the likelihood of peeling, which will be discussed in subsequent paragraphs.

[0091] Because pre-cutting is performed using blade 56 instead of a laser, no recast layer is formed. For example, Figure 9 The diagram illustrates the recast layer 60 (shown in dashed lines) that would form if pre-cut using a laser. If a laser were used, some edge portions of the dielectric layer 24 of the interconnect assembly 34, being formed of an inorganic material, might melt due to the heat from the laser. The molten portion would flow downwards to cover portions of the sealant 42. Due to the significant difference between the organic materials of the dielectric layer 24 and the sealant 42, the recast layer would likely peel off from the sealant 42. Therefore, by using a blade instead of a laser, a recast layer is not formed, and delamination is avoided.

[0092] Due to the physical cutting action using a blade, some filler particles in sealant 42 may also be partially removed. For example, Figure 18A portion of the sealant 42 is shown. At the surface of the sealant 42 produced by the pre-cutting process (e.g., the curved surface shown in the illustration), some portions of filler particles 42B, which may be spherical, are removed, and the remaining filler particles 42B may be partial particles. The exposed surfaces of the cut filler particles 42B are flat, substantially flat, or slightly curved to fit the shape of the blade 56.

[0093] Return to reference Figure 9 According to some embodiments, a single precutting process is performed between two adjacent package components to be separated. Therefore, a single trench 54 exists in each scribe line 61. According to an alternative embodiment, two trenches 54 are formed in each scribe line 61, wherein each trench 54 is formed by a single precutting process. For example, Figure 19 Two trenches 54 are shown that are adjacent to each other and formed in the same scribe line 61. The two trenches 54 are separated from each other, and a portion of the dielectric layer 24 remains therebetween.

[0094] According to some embodiments, a two-step precutting process can be performed. For example... Figure 9 As shown, laser pre-cutting can be performed to cut the dielectric layer 24 before pre-cutting with blade 56, during which a recast layer 60 is created. A pre-cutting process using blade 56 (hereinafter referred to as blade pre-cutting) can then be performed to remove the recast layer and deepen, widen, and / or reshape the trench 54 so that the trench 54 can have a desired shape. Because the properties of the recast layer 60 are the same as or similar to those of the dielectric layer 24, the recast layer 60 has good adhesion to the dielectric layer 24 and is unlikely to peel off from the dielectric layer 24. Therefore, according to some embodiments, blade pre-cutting can remove a portion 60A of the recast layer 60 in contact with the sealant 42, but leave some portions of the recast layer 60 on the sidewalls of the dielectric layer 24 intact. Part 60B remains intact. The entire surface of the sealant 42, covered by the recast layer 60, is thus re-exposed. Some portions of the sidewalls of the dielectric layer 24 can also be re-exposed after blade pre-cutting. According to an alternative embodiment, blade pre-cutting can remove the entire recast layer 60, leaving no recast layer 60 after the blade pre-cutting. The two-step pre-cutting process reduces the likelihood of delamination between the interconnect assembly 34 and the sealant 42 (caused by the recast layer). On the other hand, laser pre-cutting reduces stress on the dielectric layer 24 and the sealant 42, and further reduces the likelihood of delamination between the dielectric layer 24 and the sealant 42.

[0095] Figure 10This illustrates the partitioning of the reconstructed wafer 44, resulting in multiple discrete packages 44'. The corresponding process is described in... Figure 20 The process flow 200 shown is designated as process 222. The dicing process can be performed using a blade 68. The kerf passes through the sealant 42 and is spaced apart from the dielectric layer 24. Therefore, the blade 68 does not apply force to the dielectric layer 24, and the dicing process does not cause the dielectric layer 24 to delaminate from the sealant 42. According to an alternative embodiment, a laser beam can be used to perform the dicing process. Figure 19 In the embodiment shown, the segmentation process also removes a portion of the dielectric layer 24 between two adjacent trenches 54.

[0096] According to some embodiments in which both the pre-cutting and slitting processes are performed using blades, both the pre-cutting and slitting processes can be performed using a single tool.

[0097] Figure 11 This illustrates bonding package 44' to another package assembly 70 to form package 74. The corresponding process is shown as follows. Figure 20 Process 224 in the illustrated process flow 200. The package assembly 70 may include a package substrate, a printed circuit board, a package, an interposer, etc. According to some embodiments, bonding includes solder bonding, wherein a soldering region 66 is used. According to alternative embodiments, direct metal-to-metal bonding may be employed.

[0098] Then, underfill 72 is applied to the gap between package 44' and package assembly 70. The corresponding process is illustrated as follows. Figure 20 Process 226 in the process flow 200 shown. According to some embodiments, the bottom filler 72 includes a base material 72A ( Figure 18 The filler particles 72B are mixed with the substrate material 72A. The substrate material 72A may include resins, epoxy resins, and / or polymers. Some example substrate materials include epoxy amines, epoxy anhydrides, epoxy phenols, etc., or combinations thereof. The filler particles 72B are formed of a dielectric material and may include silica, alumina, boron nitride, etc., and may be in the form of spherical particles. The underfill 72 is dispensed in a flowable form and then cured.

[0099] Figure 18 As shown Figure 11An enlarged view of portion 76 of the package 74 shown. According to some embodiments, the sealant 42 comprises a base material 42A and filler particles 42B in physical contact with the underfill 72. The underfill 72 may also comprise a base material 72A and filler particles 72B. Some filler particles 42B at the cut surface (cut in the pre-cutting and dicing processes) may be partial particles, and the substantially flat (or slightly curved) surfaces of the partial particles 42B physically contact the substrate 72A and the circular surface. According to some embodiments, the underfill 72 contacts the entire sidewall of the dielectric layer 24. According to an alternative embodiment, laser pre-cutting is performed prior to cutting with a blade (hereinafter referred to as blade cutting), and the blade cutting removes a portion of the recast layer 60, which may remain on a portion of the surface of the dielectric layer 24 but does not extend over the sealant 42. The recast layer 60 can be distinguished from the dielectric layer 24 because it has been melted and solidified.

[0100] Figures 12 to 14 and Figures 15 to 17 This diagram shows a cross-sectional view of an intermediate stage in the packaging process according to some embodiments of the present disclosure. Unless otherwise stated, the materials and forming processes of the components in these embodiments are the same as described above. Figures 1 to 11 The same components in the illustrated embodiments are denoted by the same reference numerals and are substantially the same. Therefore, regarding Figures 12 to 14 and Figures 15 to 17 Details of the forming process and materials of the components shown can be found in the discussion of the foregoing embodiments.

[0101] Figures 12 to 14 The initial steps of the embodiment and Figures 1 to 8 The results are essentially the same. Next, refer to... Figure 12 A pre-cutting process is performed to form groove 54. According to these embodiments, groove 54 has a V-shaped profile. This can be achieved by using a blade 56 with a V-shaped cutting edge. Pre-cutting can be combined with... Figure 9 The description is essentially the same and will not be repeated here. The sidewalls 54SW of the groove 54 can be straight or slightly curved. According to some embodiments, the V-shaped groove 54 can also be... Figure 19 In the illustrated embodiment, this is employed to form two V-shaped grooves 54 within the same scribing line 61. According to an alternative embodiment, laser pre-cutting can be performed, wherein a recast layer 60 is formed, followed by a blade cutting process to enlarge and / or widen the grooves 54 and remove all or part of the recast layer 60. Thus, as... Figure 12As shown, according to some embodiments, some portions 60B of the recast layer 60 may remain on the sidewalls of the dielectric layer 24, but spaced apart from the sealant 42. Portions 60A of the recast layer 60 are removed. According to other embodiments, all of the recast layer 60 is removed.

[0102] Figure 13 The dicing process is illustrated, in which the reconstructed wafer 44 is diced into multiple discrete packages 44'. The kerf is separated from the dielectric layer 24, so the blade 56 does not apply force to the dielectric layer 24. Figure 14 This illustrates the combination of package 44' and package component 70 to form package 74. The preceding paragraphs also reflect some details of part 76 of package 74. An enlarged view of part 76 is similar to... Figure 18 As shown, except that the edges of dielectric layer 24 and sealant 42 are straight and slanted. Figure 18 The partially spherical filler portion 42B will have flat surfaces that are aligned to form part of the straight (and inclined) edge of the sealant 42, and the straight edge contacts the underfill 72. Similarly, the underfill 72 has a base material 72A and spherical particles 72B, which are in physical contact with the base material 42A and the partially spherical particles 42B of the sealant 42.

[0103] Figures 15 to 17 This illustrates some intermediate stages in the packaging formation according to yet another alternative embodiment. Figures 15 to 17 The initial steps of the embodiment and Figures 1 to 8 The results are essentially the same. Next, refer to... Figure 15 A pre-cutting process is performed to form a groove 54. According to these embodiments, the groove 54 has a deep U-shaped cross-section. The groove 54 may have vertical and straight sidewalls 54SW and a flat bottom 54BS, the flat bottom 54BS being connected to the vertical sidewalls 54SW by a curved corner. The shape of the groove 54 can be achieved by using a blade 56 with a U-shaped cutting edge. Pre-cutting can be combined with... Figure 9 The results are essentially the same and will not be repeated here. According to some embodiments, in... Figure 19 In the illustrated embodiment, a U-shaped groove 54 may be used to form two deep U-shaped grooves 54 in the same scribing line 61.

[0104] According to an alternative embodiment, a two-step pre-cutting process is performed, wherein a laser pre-cutting process may first be performed to form the recast layer 60 as shown by the dashed lines. Then, a blade pre-cutting process is performed to enlarge, widen, and / or reshape the groove 54 and remove all or some portions of the recast layer 60. For example, according to some embodiments, a portion 60A of the recast layer 60 is removed, while some portions 60B of the recast layer 60 may remain on the sidewalls of the dielectric layer 24. According to other embodiments, the entire recast layer 60 is removed.

[0105] Figure 16 The diagram illustrates a dicing process in which the reconstructed wafer 44 is diced into multiple discrete packages 44'. The kerf is separated from the dielectric layer 24, so that no force is applied to the dielectric layer 24, which makes the dielectric layer 24 easy to peel off. Figure 17 The combination of package 44' and package assembly 70 to form package 74 is shown. (This has already been discussed.) Figure 18 It can also reflect some details of the 74 package and 76 package. Figure 17 Except that the edges of dielectric layer 24 and sealant 42 are curved and deeper, other details are similar. Figure 18 As shown in the diagram. Due to the pre-cutting and segmentation process, the partially spherical filler portion 42B will have a flat surface. The bottom filler 72 includes a substrate 72A and spherical particles 72B, which are in physical contact with the base material 42A and the partially spherical particles 42B of the sealant 42.

[0106] Refer again Figure 18 If a two-step cutting process (laser pre-cutting followed by blade pre-cutting) is performed, a portion of the recast layer 60 can remain in the final package to separate the underfill 72 from the dielectric layer 24. No recast layer remains between the underfill 72 and the sealant 42. According to other embodiments of this disclosure, the entire sidewall of the dielectric layer 24 is not in contact with the underfill 72, and no recast layer is left in the final package.

[0107] In the above embodiments, some processes and features for forming a three-dimensional (3D) package were discussed according to some embodiments of this disclosure. Other features and processes may also be included. For example, test structures may be included to aid in verification testing of the 3D package or 3D integrated circuit device. Test structures may include, for example, test pads formed in a redistribution layer or on a substrate, which allow testing of the 3D package or 3D integrated circuit device, using probes and / or probe cards, etc. Verification testing can be performed on intermediate and final structures. Furthermore, the structures and methods disclosed herein can be used in conjunction with test methods that incorporate intermediate verification of known good dies to improve yield and reduce costs.

[0108] The embodiments of this disclosure have several advantageous features. By using a blade instead of a laser to perform the pre-cutting process, a recast layer of organic material is not formed. Recast layers have poor adhesion to sealants such as molding compounds. Therefore, if a recast layer is formed on the molding compound, it can cause the underfill to delaminate from the molding compound. By using a blade to perform the recast layer, the underfill can be in direct contact with the molding compound, and delamination is less likely to occur.

[0109] According to some embodiments of this disclosure, a partitioning method includes: forming an interconnect assembly including: a plurality of dielectric layers, wherein the dielectric layers include an organic dielectric material; and a plurality of redistribution lines extending into the dielectric layers; bonding a first package assembly and a second package assembly to the interconnect assembly; encapsulating the first package assembly and the second package assembly in a sealant; pre-cutting the interconnect assembly using a blade to form a trench, wherein the trench penetrates the interconnect assembly and extends partially into the sealant; and performing a partitioning process to separate the first package assembly and the second package assembly into a first package and a second package, respectively.

[0110] In some embodiments, a cross-section of the trench formed by pre-cutting is U-shaped. In some embodiments, a cross-section of the trench formed by pre-cutting is V-shaped. In some embodiments, in the slitting process, corresponding kerfs space the nearest edges of the dielectric layer. In some embodiments, the slitting process is performed using an additional blade. In some embodiments, the slitting process is performed using a laser. In some embodiments, the organic dielectric material includes polyimide. In some embodiments, the slitting method further includes performing an additional pre-cutting process using a laser before pre-cutting with a blade. In some embodiments, the slitting method further includes: bonding a first package to a package substrate; and distributing an underfill between the first package and the package substrate, wherein the underfill physically contacts a surface of a sealant, wherein the surface is created by pre-cutting.

[0111] According to some embodiments of the present disclosure, a segmentation method includes: forming a plurality of organic layers on a carrier; forming a plurality of redistribution lines in the organic layers; attaching a top bare crystal to the redistribution lines; distributing a bottom filler into a gap between the redistribution lines and the top bare crystal; applying a molding compound to the bottom filler and the organic layers; separating the carrier from the organic layers; and pre-cutting the organic layers and the molding compound with a blade.

[0112] In some embodiments, a U-shaped groove is formed to extend into the organic layer and the molding compound. In some embodiments, a V-shaped groove is formed to extend into the organic layer and the molding compound. In some embodiments, the organic layer comprises polyimide. In some embodiments, the slitting method further includes slitting the molding compound after pre-cutting. In some embodiments, slitting is performed using an additional blade, and the additional blade is spaced apart from the organic layer throughout the slitting. In some embodiments, slitting is performed using a laser.

[0113] According to some embodiments of this disclosure, a segmentation method includes: molding a first device die and a second device die in a molding compound, wherein the molding compound includes a first substrate material and a plurality of first filler particles mixed in the first substrate material; performing a pre-cutting process using a blade, wherein the blade penetrates a plurality of polymer layers bonded to the molding compound and extends into the molding compound, and the blade cuts some of the first filler particles to form a plurality of partial particles; after the pre-cutting process, sawing through the molding compound to separate the first device die and the second device die into a first package and a second package; bonding the first package to a package assembly; and applying an underfill to a gap between the first package and the package assembly, wherein the underfill includes a second substrate material and a plurality of second filler particles mixed in the second substrate material, and wherein the underfill is in physical contact with the molding compound.

[0114] In some embodiments, the first filler particle and the second filler particle are inorganic particles. In some embodiments, the second filler particle is in physical contact with a portion of the particles. In some embodiments, the pre-cutting process results in a U-shaped or V-shaped groove extending partially into the molding compound.

[0115] The foregoing has outlined features of several embodiments to enable those skilled in the art to better understand various aspects of this disclosure. Those skilled in the art should understand that they can readily use this disclosure as a basis for designing or modifying other processes and structures for performing the same purpose and / or achieving the same advantages of the embodiments described herein. Those skilled in the art should also recognize that such equivalent structures do not depart from the spirit and scope of this disclosure, and that various alterations, substitutions, and changes can be made to this document without departing from the spirit and scope of this disclosure.

Claims

1. A segmentation method, comprising: Forming an interconnect component, including: Multiple dielectric layers, wherein the multiple dielectric layers include an organic dielectric material; and Multiple redistribution lines extend into the multiple dielectric layers; A first package component and a second package component are attached to the interconnect component; The first encapsulation component and the second encapsulation component are encapsulated in a sealant; The interconnect assembly is pre-cut to form a trench that penetrates the interconnect assembly and extends partially into the sealant, wherein the pre-cut includes: A first pre-cutting process is performed using a laser to form the groove; and A second pre-cutting process is performed using a blade, wherein the second pre-cutting process further cuts through the groove; and A splitting process is performed to separate the first package assembly and the second package assembly into a first package and a second package, respectively.

2. The method of claim 1, wherein a cross-section of the groove formed by the pre-cutting is U-shaped.

3. The method of claim 1, wherein a cross-section of the groove formed by the pre-cut is V-shaped.

4. The method of claim 1, wherein in the slitting process, the corresponding saw cuts space the nearest edges of the plurality of dielectric layers apart.

5. The method of claim 1, wherein the slitting process is performed using an additional blade.

6. The method of claim 1, wherein the segmentation process is performed using a laser.

7. The method of claim 1, wherein the organic dielectric material comprises polyimide.

8. The method of claim 1, further comprising: The first package is bonded to a package substrate; as well as An underfill is disposed between the first package and the package substrate, wherein the underfill is in physical contact with a surface of the sealant, wherein the surface is created by the pre-cutting.

9. A segmentation method, comprising: Multiple organic layers are formed on a carrier; Multiple redistribution lines are formed in these multiple organic layers; A top bare crystal is attached to these multiple redistribution lines; A bottom filler is distributed into a gap between the plurality of redistribution lines and the top bare crystal; A molding compound is applied to the bottom filler and the plurality of organic layers; The carrier was separated from the multiple organic layers; as well as Pre-cutting the plurality of organic layers and the molding compound to form a groove, wherein the groove penetrates the plurality of organic layers and extends partially into the molding compound, and wherein the pre-cutting includes: A first pre-cutting process is performed using a laser to form the groove; as well as A second pre-cutting process is performed using a blade, wherein the second pre-cutting process further cuts through the groove.

10. The method of claim 9, wherein a cross-section of the trench is U-shaped.

11. The method of claim 9, wherein a cross-section of the trench is V-shaped.

12. The method of claim 9, wherein the plurality of organic layers comprises polyimide.

13. The method of claim 9, further comprising dividing the molding compound after the pre-cutting.

14. The method of claim 13, wherein the segmentation is performed using an additional blade, and throughout the segmentation, the additional blade is spaced apart from the plurality of organic layers.

15. The method of claim 13, wherein the segmentation is performed using a laser.

16. A segmentation method, comprising: A first device die and a second device die are molded in a molding compound, wherein the molding compound includes a first base material and a plurality of first filler particles mixed in the first base material; A pre-cutting process is performed, including: A first pre-cutting process is performed using a laser to form a groove, wherein the groove penetrates multiple polymer layers bonded to the molding compound and extends into the molding compound; and A second pre-cutting process is performed using a blade, wherein the second pre-cutting process further cuts through the groove, and the blade cuts some of the plurality of first filler particles to form a plurality of partial particles; Following the pre-cutting process, sawing is performed through the molding compound to separate the first device die and the second device die into a first package and a second package; The first package is incorporated into a package component; and An underfill is applied to a gap between the first package and the package assembly, wherein the underfill comprises a second base material and a plurality of second filler particles mixed in the second base material, and wherein the underfill is in physical contact with the molding compound.

17. The method of claim 16, wherein the plurality of first filler particles and the plurality of second filler particles are inorganic particles.

18. The method of claim 16, wherein the plurality of second filler particles are in physical contact with the plurality of partial particles.

19. The method of claim 16, wherein the pre-cutting process results in a U-shaped or V-shaped groove extending partially into the molding compound.

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