Fuse structure and method of manufacturing the same

Abstract

The application relates to a fuse structure and a manufacturing method thereof, wherein the fuse structure comprises a substrate, an active region above the substrate, a fuse gate structure surrounding a circumferential outer surface of the active region and electrically connected with a first power supply, and a control gate structure surrounding a circumferential outer surface of the fuse gate structure and electrically connected with a second power supply; the voltage of the first power supply is greater than that of the second power supply. In the fuse structure, the fuse gate structure surrounds the circumferential outer surface of the active region, and the control gate structure surrounds the circumferential outer surface of the fuse gate structure, so that a conductive channel can be formed in the circumferential outer surface of the active region, thereby effectively saving the area. Meanwhile, the control gate structure and the fuse gate structure are arranged in layers in a surrounding mode, thereby being combined into one gate structure, so that the application can greatly save the area and greatly improve the integration of the fuse circuit.

Description

Technical Field

[0001] This application relates to the field of integrated circuit technology, and in particular to a fuse structure and its fabrication method. Background Technology

[0002] Fuse memory cells are widely used in integrated circuits for repair work, and their classic structure is a separate structure for the control gate and the fuse gate. However, due to design constraints between the two gate structures, this fuse structure suffers from excessive area. As the density of integrated circuits continues to increase, the disadvantage of excessive area will gradually become apparent. Summary of the Invention

[0003] Therefore, it is necessary to provide a fuse structure and its manufacturing method to address the problem of excessively large fuse structure area in existing technologies.

[0004] A fuse structure, comprising:

[0005] Substrate;

[0006] The active region is located above the substrate;

[0007] A fuse gate structure surrounds the circumferential outer surface of the active region and is electrically connected to a first power supply;

[0008] A control gate structure surrounds the circumferential outer surface of the fuse gate structure and is electrically connected to a second power supply;

[0009] The voltage of the first power source is greater than the voltage of the second power source.

[0010] In one embodiment, the active region extends perpendicularly to the substrate surface, and the active region is connected to the substrate.

[0011] In one embodiment, the active region extends parallel to the substrate surface, and the active region is spaced apart from the substrate.

[0012] In one embodiment,

[0013] The fuse gate structure includes a first gate dielectric layer and a fuse gate layer. The first gate dielectric layer surrounds the circumferential outer surface of the active region, and the fuse gate layer surrounds the circumferential outer surface of the first gate dielectric layer and is electrically connected to the first power supply.

[0014] The control gate structure includes a second gate dielectric layer and a control gate layer. The second gate dielectric layer surrounds the circumferential outer surface of the fuse gate layer, and the fuse gate layer surrounds the circumferential outer surface of the second gate dielectric layer and is electrically connected to the second power supply.

[0015] In one embodiment, the thickness of the first gate dielectric layer is less than the thickness of the second gate dielectric layer.

[0016] In one embodiment,

[0017] The fuse structure further includes a fuse connection end and a control connection end. The fuse connection end is connected to the fuse gate layer and is used to electrically connect to a first power supply. The control connection end is connected to the control gate layer and is used to electrically connect to a second power supply.

[0018] The fuse connection terminal and the control connection terminal are located on opposite sides of the active region, respectively.

[0019] In one embodiment, the extension direction of the fuse connection terminal and the control connection terminal is perpendicular to the extension direction of the active region.

[0020] In one embodiment, the fuse structure further includes a source region and a drain region, wherein the source region and the drain region are respectively connected to both sides of the active region in the extending direction of the active region.

[0021] A method for fabricating a fuse structure includes:

[0022] Provide substrate;

[0023] An active region is formed above the substrate;

[0024] A fuse gate structure is formed on the circumferential outer surface of the active region, and the fuse gate structure is electrically connected to a first power supply.

[0025] A control gate structure is formed on the circumferential outer surface of the fuse gate structure, and the control gate structure is electrically connected to a second power supply.

[0026] The voltage of the first power source is greater than the voltage of the second power source.

[0027] In one embodiment, the active region extends perpendicularly to the substrate surface, and the active region is connected to the substrate.

[0028] In one embodiment, the active region extends parallel to the substrate surface, and the active region is spaced apart from the substrate.

[0029] In one embodiment,

[0030] The formation of a fuse gate structure on the circumferential outer surface of the active region includes:

[0031] A first gate dielectric layer is formed on the circumferential outer surface of the active region;

[0032] A fuse gate layer is formed on the circumferential outer surface of the first gate dielectric layer, and the fuse gate layer and the first gate dielectric layer constitute the fuse gate structure.

[0033] A control gate structure is formed on the circumferential outer surface of the fuse gate structure, comprising:

[0034] A second gate dielectric layer is formed on the circumferential outer surface of the fuse gate layer;

[0035] A control gate layer is formed on the circumferential outer surface of the second gate dielectric layer, and the control gate layer and the second gate dielectric layer constitute the control gate structure.

[0036] In one embodiment, the thickness of the first gate dielectric layer is less than the thickness of the second gate dielectric layer.

[0037] In one embodiment, after forming the control gate layer on the circumferential outer surface of the second gate dielectric layer, the method further includes:

[0038] A fuse connection terminal is formed to connect the fuse gate layer, and the fuse connection terminal is used to electrically connect to a first power supply;

[0039] A control connection terminal is formed to connect the control gate layer, and the control connection terminal is used to electrically connect to a second power supply.

[0040] The fuse connection terminal and the control connection terminal are located on opposite sides of the active region, respectively.

[0041] In one embodiment, the extension direction of the fuse connection terminal and the control connection terminal is perpendicular to the extension direction of the active region.

[0042] In practical applications, the aforementioned fuse structure can be used to read different logic states "0" and "1" by controlling the opening and closing of the first power supply. Furthermore, a suitable second power supply can be configured so that when the second power supply is turned on to read various logic states of the fuse structure, conductive communication is formed in the active region 200. Then, by observing the difference in source and leakage currents, "0" and "1" can be read, thereby achieving the distinction between "0" and "1".

[0043] Meanwhile, since the fuse gate structure surrounds the circumferential outer surface of the active region, and the control gate structure surrounds the circumferential outer surface of the fuse gate structure, conductive channels can be formed within the circumferential outer surface of the active region, thereby effectively saving area. Furthermore, the control gate structure and the fuse gate structure are stacked around each other, thus merging into a single gate structure. Therefore, this application can significantly save area and greatly improve the integration density of the fuse circuit. Attached Figure Description

[0044] To more clearly illustrate the technical solutions in the embodiments of this application or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0045] Figure 1 This is a three-dimensional schematic diagram of the fuse structure provided in one embodiment;

[0046] Figure 2 for Figure 1 A cross-sectional schematic diagram of the fuse structure along the AA' direction provided in the diagram;

[0047] Figure 3 This is a three-dimensional schematic diagram of the fuse structure provided in another embodiment;

[0048] Figure 4 for Figure 3 A cross-sectional schematic diagram of the fuse structure along the BB' direction provided in the diagram;

[0049] Figure 5 This is a flowchart of a method for fabricating a fuse structure provided in one embodiment.

[0050] Explanation of reference numerals in the attached figures:

[0051] 100 - Substrate; 200 - Active region; 300 - Fuse gate structure; 310 - First gate dielectric layer; 320 - Fuse gate layer; 400 - Control gate structure; 410 - Second gate dielectric layer; 420 - Control gate layer; 500 - Source region; 600 - Drain region; 700 - Fuse connection terminal; 800 - Control connection terminal; 910 - Source connection terminal; 920 - Drain connection terminal. Detailed Implementation

[0052] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate preferred embodiments of the application. However, this application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.

[0053] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0054] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, regions, layers, doping types, and / or portions, these elements, components, regions, layers, doping types, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, doping type, or portion from another element, component, region, layer, doping type, or portion. Therefore, without departing from the teachings of this invention, the first element, component, region, layer, doping type, or portion discussed below may be referred to as a second element, component, region, layer, or portion.

[0055] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, the element or feature described as “below,” “under,” or “below” will be oriented “above” the other element or feature. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. Furthermore, the device may also include other orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptive terms used herein will be interpreted accordingly.

[0056] When used herein, the singular forms of “a,” “an,” and “the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that when the terms “comprise” and / or “comprising” are used in this specification, the presence of the stated feature, integer, step, operation, element, and / or part is established, but the presence or addition of one or more other features, integers, steps, operations, elements, parts, and / or groups is not excluded. Meanwhile, when used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0057] Embodiments of the invention are described herein with reference to cross-sectional views that serve as schematic diagrams of ideal embodiments (and intermediate structures), thus allowing for the anticipation of variations in the illustrated shapes due to, for example, manufacturing techniques and / or tolerances. Therefore, embodiments of the invention should not be limited to the specific shapes of the regions shown herein, but rather include shape deviations due to, for example, manufacturing techniques. Consequently, the regions shown in the figures are substantially schematic, and their shapes do not represent the actual shapes of regions of the device, nor do they limit the scope of the invention.

[0058] Please see Figure 1 as well as Figure 2 (or please see) Figure 3 as well as Figure 4 The present invention provides a fuse structure, including a substrate 100, an active region 200, a fuse gate structure 300 and a control gate structure 400.

[0059] The substrate 100 includes, but is not limited to, a silicon substrate. The active region 200 is located above the substrate 100, and its material may be the same as or different from that of the substrate 100; this application does not limit this. Specifically, the material of the active region 200 may be silicon, silicon germanium, or silicon carbide, etc.

[0060] For example, please refer to Figure 1 as well as Figure 2 The active region 200 can extend perpendicularly to the surface of the substrate 100. Furthermore, the active region 200 can be connected to the substrate 100.

[0061] At this point, a source region 500 (or a drain region 600) can be formed first within the substrate 100, and then an active region 200 can be formed upward from the source region 500 (or drain region 600). Then, a drain region 600 (or source region 500) can be formed on top of the active region 200.

[0062] Alternatively, as another example, see Figure 3 as well as Figure 4 The active region 200 can extend in a direction parallel to the surface of the substrate 100. Furthermore, the active region 200 can be spaced apart from the substrate 100.

[0063] At this point, a fin-shaped region can be formed in the substrate 100. Shallow trench isolation structures (STIs) can be provided on both sides of the fin-shaped region, and the material of the STI can be silicon dioxide or the like. The active region 200 can be located above the fin-shaped region.

[0064] Furthermore, at this time, epitaxial growth can be carried out on both sides of the active region 200 to form the source region 500 and the drain region 600.

[0065] Of course, the active region 200 can be arranged in many other ways above the substrate 100 (for example, the extension direction of the active region 200 can also be at a certain angle to the surface of the substrate 100), and this application does not impose too many restrictions on this. Furthermore, the source region 500 and the drain region 600 can also be formed in various ways. For example, the fuse gate structure 300 and the control gate structure 400 can both cover the active region 200, and the ends of the uncovered active region 200 can also be formed by doping to create the source region 500 and the drain region 600.

[0066] A fuse gate structure 300 surrounds the circumferential outer surface of the active region 200, and a control gate structure 400 surrounds the circumferential outer surface of the fuse gate structure 300. It can be understood that both the fuse gate structure 300 and the control gate structure 400 are insulated from the source region 500 and the drain region 600 on either side. Specifically, both the fuse gate structure 300 and the control gate structure 400 may have an insulating layer between them and the source region 500 and the drain region 600 on either side.

[0067] Furthermore, the fuse gate structure 300 surrounds the circumferential outer surface of the active region 200, and the control gate structure 400 surrounds the circumferential outer surface of the fuse gate structure 300. Therefore, the fuse gate structure 300 and the control gate structure 400 jointly control the formation of a conductive channel within the active region 200. Specifically, the conductive channel may be located near the circumferential outer surface of the active region 500.

[0068] Meanwhile, the fuse gate structure 300 is electrically connected to the first power supply, and the control gate structure 400 is electrically connected to the second power supply, with the voltage of the first power supply being greater than the voltage of the second power supply.

[0069] When the first power supply fuse gate structure 300 receives a voltage from the first power supply, the voltage is relatively large, which can break down the fuse gate structure 300. The conductivity of the broken-down fuse gate structure 300 changes, which in turn changes the size of the conductive channel formed in the active region 200, thereby changing the magnitude of the source and drain current flowing through the conductive channel.

[0070] Therefore, the distinction between "0" and "1" can be achieved by controlling the opening and closing of the first power supply.

[0071] Specifically, in the application of the fuse structure, the different logic states "0" and "1" of the fuse structure can be read by controlling the opening and closing of the first power supply.

[0072] Furthermore, a suitable second power supply can be set so that when the second power supply is turned on to read various logic states of the fuse structure, conductive communication is formed in the active area 200, and then the "0" and "1" can be read through the difference in source and leakage current.

[0073] It is worth noting that in this application, the fuse gate structure 300 being electrically connected to the first power supply means that the fuse gate structure 300 has the function of being electrically connected to the first power supply. However, in practical applications, it is necessary to decide whether to obtain an electrical signal connection based on requirements. Specifically, a first switch can be provided between the fuse gate structure 300 and the first power supply.

[0074] Similarly, the fact that the control gate structure 400 is electrically connected to the second power supply means that the control gate structure 400 has the function of electrically connecting to the second power supply. However, in practical applications, it is necessary to decide whether to obtain an electrical signal connection based on the requirements. Specifically, a second switch can be set between the control gate structure 4000 and the second power supply.

[0075] In this embodiment, since the fuse gate structure 300 surrounds the circumferential outer surface of the active region 200, and the control gate structure 400 surrounds the circumferential outer surface of the fuse gate structure 300, conductive channels can be formed within the circumferential outer surface of the active region 200, thereby effectively saving area. Simultaneously, the control gate structure 400 and the fuse gate structure 300 are stacked around each other, thus merging into a single gate structure. Therefore, this embodiment can significantly save area and greatly improve the integration density of the fuse circuit.

[0076] In one embodiment, see Figure 2 or Figure 4 The fuse gate structure 300 includes a first gate dielectric layer 310 and a fuse gate layer 320. The first gate dielectric layer 310 may be an insulating layer such as an oxide layer, which surrounds the circumferential outer surface of the active region 200. The fuse gate layer 320 may be a conductive layer such as polysilicon, which surrounds the circumferential outer surface of the first gate dielectric layer 310 and is electrically connected to a first power supply.

[0077] When the fuse gate layer 320 receives the voltage of the first power supply, the first gate dielectric layer 310 surrounded by it is broken down by the first gate voltage, the resistance of the first gate dielectric layer 310 decreases, thereby increasing the source-drain current.

[0078] The control gate structure 400 includes a second gate dielectric layer 410 and a control gate layer 420. The second gate dielectric layer 410 may be an insulating layer such as an oxide layer, which surrounds the circumferential outer surface of the fuse gate layer 320. The control gate layer 420 may be a conductive layer such as polysilicon, which surrounds the circumferential outer surface of the second gate dielectric layer 410 and is electrically connected to a second power supply.

[0079] When the control gate layer 420 receives a voltage from the second power supply, a conductive channel is formed in the active region 200.

[0080] It is understood that the materials of the first gate dielectric layer 310 and the second gate dielectric layer 410 may be the same or different, and this application does not impose any restrictions on this. The materials of the control gate layer 420 and the fuse gate layer 320 may be the same or different, and this application does not impose any restrictions on this.

[0081] Furthermore, the first gate dielectric layer 310, the second gate dielectric layer 410, the fuse gate layer 320, and the control gate layer 420 can all be single-layer structures or multiple-layer structures, depending on actual needs. For example, the second gate dielectric layer 410 may include a high-k dielectric layer such as hafnium oxide, and in this case, the control gate layer 420 may include multiple stacked metal layers.

[0082] Furthermore, in addition to the second gate dielectric layer 410 and the control gate layer 420, the control gate structure 400 may also include other functional film layers. In addition to the first gate dielectric layer 310 and the fuse gate layer 320, the fuse gate structure 300 may also include other functional film layers. This application does not impose any limitations in this regard.

[0083] Furthermore, in this embodiment, the thickness of the second gate dielectric layer 410 can be set to be greater than the thickness of the first gate dielectric layer 310.

[0084] Since the second gate dielectric layer 410 and the first gate dielectric layer 310 are located on opposite sides of the fuse gate layer 320, the second gate dielectric layer 410 will inevitably be affected when the fuse gate layer 320 receives the voltage signal of the first power supply and breaks down the first gate dielectric layer 310.

[0085] In this embodiment, the thickness of the second gate dielectric layer 410 is set to be greater than the thickness of the first gate dielectric layer 310, thereby effectively reducing the impact on the second gate dielectric layer 410 when the first gate dielectric layer 310 is broken down.

[0086] As an example, the thickness of the first gate dielectric layer 310 can be set to 1.5nm to 2.5nm, while the thickness of the second gate dielectric layer 410 can be set to 4.5nm to 6nm. This ensures that the second gate dielectric layer 410 will not be damaged during the breakdown and melting process of the first gate dielectric layer 310, thereby guaranteeing product reliability. In this case, the voltage range of the first power supply can be further set to 5V to 6V, and the voltage range of the second power supply can be set to 2V to 3V.

[0087] Of course, in other embodiments, the second gate dielectric layer 410 can also be protected in other ways. For example, the dielectric constant of the second gate dielectric layer 410 can be set to be greater than the dielectric constant of the first gate dielectric layer 310.

[0088] In one embodiment, see Figure 1 as well as Figure 2(or please see) Figure 3 as well as Figure 4 The fuse structure also includes a fuse connection terminal 700 and a control connection terminal 800. The fuse connection terminal 700 is connected to the fuse gate layer 320 and is used for electrical connection to a first power supply. The control connection terminal 800 is connected to the control gate layer 420 and is used for electrical connection to a second power supply.

[0089] The fuse connection terminal 700 and the control connection terminal 800 are located on opposite sides of the active region 200, which can effectively prevent signal coupling interference between the fuse connection terminal 700 and the control connection terminal 800.

[0090] Furthermore, the extension direction of the fuse connection end 200 and the control connection end 800 can be set to be perpendicular to the extension direction of the active region 200.

[0091] At this time, the fuse connection terminal 200 and the control connection terminal 800 will move away from the source region 500 and the drain region 600 on both sides of the active region 200, thereby reducing interference to the signals of the source region 500 and the drain region 600.

[0092] Specifically, please refer to Figure 1 as well as Figure 2 When the extension direction of the active region 200 is perpendicular to the surface of the substrate 100 and the active region 200 is connected to the substrate 100, a fuse connection end 700 and a control connection end 800 can be provided to extend in the horizontal direction, and the two can be located on opposite sides of the active region 200 respectively.

[0093] Meanwhile, the fuse structure can also be provided with a source connection terminal 910 connecting the source region 500 and a drain connection terminal 920 connecting the drain region 600. The horizontal extension directions of the fuse connection terminal 700, control connection terminal 800, source connection terminal 910, and drain connection terminal 920 can be perpendicular to each other in pairs.

[0094] Alternatively, please see Figure 3 as well as Figure 4 When the extension direction of the active region 200 is parallel to the surface of the substrate 100, and the active region 200 is spaced apart from the substrate 100, the fuse connection end 700 and the control connection end 800 can be configured to extend in a direction perpendicular to the extension direction of the active region 200 on a horizontal plane. Alternatively, the fuse connection end 700 and the control connection end 800 can be configured to extend vertically upward (not shown), and so on.

[0095] It can be understood here that while the fuse connection terminal 700 is connected to the fuse gate layer 320, it is insulated from the control connection terminal 800. Specifically, an isolation layer 1000 can be provided between the fuse connection terminal 700 and the control connection terminal 800 (see [link to relevant documentation]). Figure 2 or Figure 4 Meanwhile, the thickness of the isolation layer 1000 can be set to be greater than a preset thickness, that is, the isolation layer 1000 is set to have a sufficiently large thickness to prevent the second gate dielectric layer 410 from being affected when the first gate dielectric layer 310 is broken down. The preset thickness can be set according to the actual situation.

[0096] In one embodiment, see Figure 5 A method for fabricating a fuse structure is provided, comprising:

[0097] Step S100: Provide substrate 100;

[0098] Step S200: An active region 200 is formed above the substrate 100;

[0099] In step S300, a fuse gate structure 300 is formed on the circumferential outer surface of the active region 200, and the fuse gate structure 300 is electrically connected to the first power supply.

[0100] In step S400, a control gate structure 400 is formed on the circumferential outer surface of the fuse gate structure 300, and the control gate structure 400 is electrically connected to the second power supply.

[0101] The voltage of the first power supply is greater than the voltage of the second power supply.

[0102] Specifically, the fuse structure formed by the method of this embodiment can be used to read different logic states "0" and "1" of the fuse structure by controlling the opening and closing of the first power supply during application.

[0103] Furthermore, a reasonable second power supply can be set so that when the second power supply is turned on to read various logic states of the fuse structure, conductive channels are formed in the active area 200, and then the "0" and "1" are read by the difference between the source and drain currents.

[0104] It is worth noting that in this application, the fuse gate structure 300 being electrically connected to the first power supply means that the fuse gate structure 300 has the function of being electrically connected to the first power supply. However, in practical applications, it is necessary to decide whether to obtain an electrical signal connection based on requirements. Specifically, a first switch can be provided between the fuse gate structure 300 and the first power supply.

[0105] Similarly, the fact that the control gate structure 400 is electrically connected to the second power supply means that the control gate structure 400 has the function of electrically connecting to the second power supply. However, in practical applications, it is necessary to decide whether to obtain an electrical signal connection based on the requirements. Specifically, a second switch can be set between the control gate structure 4000 and the second power supply.

[0106] In this embodiment, since the fuse gate structure 300 surrounds the circumferential outer surface of the active region 200, and the control gate structure 400 surrounds the circumferential outer surface of the fuse gate structure 300, conductive channels can be formed within the circumferential outer surface of the active region 200, thereby effectively saving area. Simultaneously, the control gate structure 400 and the fuse gate structure 300 are stacked around each other, thus merging into a single gate structure. Therefore, this embodiment can significantly save area and greatly improve the integration density of the fuse circuit.

[0107] In one embodiment, the active region 200 extends perpendicularly to the surface of the substrate 100, and the active region 200 is connected to the substrate 100.

[0108] Specifically, prior to step S200, a source region 500 (or a drain region 600) may be formed within the substrate 100 by means of ion implantation or the like. Then, in step S200, an active region 200 is formed on the source region 500 (or drain region 600). After step S200, a drain region 600 (or source region 500) may be formed on top of the active region 200.

[0109] In one embodiment, the active region 200 extends parallel to the surface of the substrate 100, and the active region 200 is spaced apart from the substrate 100.

[0110] At this point, specifically, after step S200, epitaxial growth can be performed on both sides of the active region 200 to form the source region 500 and the drain region 600.

[0111] In one embodiment, step S300 includes:

[0112] Step S310: A first gate dielectric layer 310 is formed on the circumferential outer surface of the active region 200;

[0113] In step S320, a fuse gate layer 320 is formed on the circumferential outer surface of the first gate dielectric layer 310, and the fuse gate layer 320 and the first gate dielectric layer 310 constitute a fuse gate structure 300.

[0114] At this time, step S400 includes:

[0115] Step S410: A second gate dielectric layer 410 is formed on the circumferential outer surface of the fuse gate layer 320;

[0116] In step S420, a control gate layer 420 is formed on the circumferential outer surface of the second gate dielectric layer 410, and the control gate layer 420 and the second gate dielectric layer 410 constitute a control gate structure 400.

[0117] In one embodiment, the thickness of the first gate dielectric layer 310 is less than the thickness of the second gate dielectric layer 410.

[0118] In one embodiment, after step S420, the method further includes:

[0119] In step S500, a fuse connection terminal 700 is formed to connect the fuse gate layer 320. The fuse connection terminal 700 is used to electrically connect to the first power supply.

[0120] In step S600, a control connection terminal 800 is formed to connect to the control gate layer 420. The control connection terminal 800 is used to electrically connect to the second power supply.

[0121] The fuse connection terminal 700 and the control connection terminal 800 are located on opposite sides of the active region 200.

[0122] In one embodiment, the extension direction of the fuse connection terminal 700 and the control connection terminal 800 is perpendicular to the extension direction of the active region 200.

[0123] For specific limitations on the fabrication method and technical effects of the fuse structure, please refer to the limitations on the fuse structure method mentioned above, which will not be repeated here.

[0124] It should be understood that, although Figure 5 The steps in the flowchart are shown sequentially as indicated by the arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified herein, there is no strict order in which these steps are executed, and they can be performed in other orders. Figure 5 At least some of the steps in the process may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but may be executed at different times. The execution order of these steps or stages is not necessarily sequential, but may be executed in turn or alternately with other steps or at least some of the steps or stages in other steps.

[0125] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features of the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0126] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A fuse structure, characterized in that, include: Substrate; The active region is located above the substrate; A fuse gate structure surrounds the circumferential outer surface of the active region and is electrically connected to a first power supply; A control gate structure surrounds the circumferential outer surface of the fuse gate structure and is electrically connected to a second power supply; The voltage of the first power source is greater than the voltage of the second power source.

2. The fuse structure according to claim 1, characterized in that, The active region extends perpendicularly to the substrate surface, and the active region is connected to the substrate.

3. The fuse structure according to claim 1, characterized in that, The active region extends parallel to the substrate surface, and the active region is spaced apart from the substrate.

4. The fuse structure according to claim 1, characterized in that, The fuse gate structure includes a first gate dielectric layer and a fuse gate layer. The first gate dielectric layer surrounds the circumferential outer surface of the active region, and the fuse gate layer surrounds the circumferential outer surface of the first gate dielectric layer and is electrically connected to the first power supply. The control gate structure includes a second gate dielectric layer and a control gate layer. The second gate dielectric layer surrounds the circumferential outer surface of the fuse gate layer, and the fuse gate layer surrounds the circumferential outer surface of the second gate dielectric layer and is electrically connected to the second power supply.

5. The fuse structure according to claim 4, characterized in that, The thickness of the first gate dielectric layer is less than the thickness of the second gate dielectric layer.

6. The fuse structure according to claim 4, characterized in that, The fuse structure further includes a fuse connection end and a control connection end. The fuse connection end is connected to the fuse gate layer and is used to electrically connect to a first power supply. The control connection end is connected to the control gate layer and is used to electrically connect to a second power supply. The fuse connection terminal and the control connection terminal are located on opposite sides of the active region, respectively.

7. The fuse structure according to claim 6, characterized in that, The extension directions of the fuse connection terminal and the control connection terminal are perpendicular to the extension direction of the active region.

8. The fuse structure according to any one of claims 1-7, characterized in that, The fuse structure further includes a source region and a drain region, and in the extending direction of the active region, the source region and the drain region are respectively connected to both sides of the active region.

9. A method for manufacturing a fused wire structure, characterized in that, include: Provide substrate; An active region is formed above the substrate; A fuse gate structure is formed on the circumferential outer surface of the active region, and the fuse gate structure is electrically connected to a first power supply. A control gate structure is formed on the circumferential outer surface of the fuse gate structure, and the control gate structure is electrically connected to a second power supply. The voltage of the first power source is greater than the voltage of the second power source.

10. The method for manufacturing the fuse structure according to claim 9, characterized in that, The active region extends perpendicularly to the substrate surface, and the active region is connected to the substrate.

11. The method for manufacturing the fuse structure according to claim 9, characterized in that, The active region extends parallel to the substrate surface, and the active region is spaced apart from the substrate.

12. The method for manufacturing the fuse structure according to claim 9, characterized in that, The formation of a fuse gate structure on the circumferential outer surface of the active region includes: A first gate dielectric layer is formed on the circumferential outer surface of the active region; A fuse gate layer is formed on the circumferential outer surface of the first gate dielectric layer, and the fuse gate layer and the first gate dielectric layer constitute the fuse gate structure. A control gate structure is formed on the circumferential outer surface of the fuse gate structure, comprising: A second gate dielectric layer is formed on the circumferential outer surface of the fuse gate layer; A control gate layer is formed on the circumferential outer surface of the second gate dielectric layer, and the control gate layer and the second gate dielectric layer constitute the control gate structure.

13. The method for manufacturing the fuse structure according to claim 12, characterized in that, The thickness of the first gate dielectric layer is less than the thickness of the second gate dielectric layer.

14. The method for manufacturing the fuse structure according to claim 12, characterized in that, After forming the control gate layer on the circumferential outer surface of the second gate dielectric layer, the method further includes: A fuse connection terminal is formed to connect the fuse gate layer, and the fuse connection terminal is used to electrically connect to a first power supply; A control connection terminal is formed to connect the control gate layer, and the control connection terminal is used to electrically connect to a second power supply. The fuse connection terminal and the control connection terminal are located on opposite sides of the active region, respectively.

15. The method for manufacturing the fuse structure according to claim 14, characterized in that, The extension directions of the fuse connection terminal and the control connection terminal are perpendicular to the extension direction of the active region.

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