Substrate processing apparatus and substrate processing method

Abstract

An apparatus for processing an overlapping substrate formed by bonding a first substrate and a second substrate includes: a holding member that holds the overlapping substrate; a removing member that, by being inserted between the first substrate and the second substrate, peels at least a peripheral portion of the first substrate from the second substrate; a lifting mechanism that adjusts the relative height position of the removing member relative to the holding member; and a control unit that controls the operation of the lifting mechanism, wherein the control unit controls the operation of the lifting mechanism to adjust the relative height position of the removing member relative to a target insertion position of the removing member over the entire circumference of the overlapping substrate.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus and a substrate processing method. Background Technology

[0002] Patent Document 1 discloses a substrate processing system for processing a substrate. The substrate processing system includes a modified layer forming apparatus and a peripheral removal apparatus. The modified layer forming apparatus forms a modified layer inside the substrate along the boundary between the central portion of the substrate and the peripheral portion that is to be removed. The peripheral removal apparatus removes the peripheral portion with the modified layer as a base point.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: International Publication No. 2019 / 176589 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] The technology disclosed herein appropriately adjusts the insertion position of the removal member relative to the overlapping substrate formed by the bonding of the first substrate and the second substrate.

[0008] Solution for solving the problem

[0009] One aspect of this disclosure is an apparatus for processing an overlapping substrate formed by bonding a first substrate and a second substrate, the apparatus comprising: a holding member for holding the overlapping substrate; a removing member for peeling at least a peripheral portion of the first substrate from the second substrate by inserting it between the first substrate and the second substrate; a lifting mechanism for adjusting the relative height position of the removing member relative to the holding member; and a control unit for controlling the operation of the lifting mechanism to adjust the relative height position of the removing member relative to a target insertion position of the removing member over the entire circumference of the overlapping substrate.

[0010] The effects of the invention

[0011] According to this disclosure, the insertion position of the removal member relative to the overlapping substrate formed by joining the first substrate and the second substrate can be appropriately adjusted. Attached Figure Description

[0012] Figure 1 This is a side view showing an example of overlapping wafers being processed in a wafer processing system.

[0013] Figure 2 It is a top view schematically showing the outline of the structure of a wafer processing system.

[0014] Figure 3 This is a side view showing an outline of the structure of the perimeter removal device according to this embodiment.

[0015] Figure 4 This is an explanatory diagram showing a structural example of the lifting mechanism involved in this embodiment.

[0016] Figure 5 This is an explanatory diagram schematically illustrating the main wafer processing steps involved in this embodiment.

[0017] Figure 6 This is a flowchart schematically illustrating the main wafer processing steps involved in this embodiment.

[0018] Figure 7 This is an explanatory diagram showing an example of forming a modified layer for a first wafer.

[0019] Figure 8 This is a flowchart schematically illustrating the main steps of perimeter removal involved in this embodiment.

[0020] Figure 9 This is an explanatory diagram schematically illustrating the perimeter removal involved in this embodiment.

[0021] Figure 10 This is an explanatory diagram schematically illustrating the perimeter removal involved in this embodiment.

[0022] Figure 11 This is a side view showing an outline of other structures of the perimeter removal device according to this embodiment.

[0023] Figure 12 This is a side view showing an outline of other structures of the perimeter removal device according to this embodiment.

[0024] Figure 13 This is a side view showing an outline of other structures of the perimeter removal device according to this embodiment.

[0025] Figure 14 These are illustrative diagrams showing other application examples of the technology involved in this disclosure.

[0026] Figure 15 These are illustrative diagrams showing other application examples of the technology involved in this disclosure. Detailed Implementation

[0027] In recent years, in the manufacturing process of semiconductor devices, in the overlapping wafer formed by bonding together semiconductor substrates (hereinafter referred to as "wafers") on the surface of which multiple electronic circuits and other devices are formed, a process is performed to thin the first wafer forming the overlapping wafer and transfer the devices formed on the first wafer to the second wafer forming the overlapping wafer.

[0028] The wafer processing system described in Patent Document 1 is an example of a system for removing the peripheral portion of a first wafer before thinning, i.e., edge trimming, as a method to suppress the formation of a blade shape on the first wafer (the wafer being processed) due to the thinning process. Specifically, in an overlapping wafer formed by bonding a first wafer and a second wafer (support wafer), a modification layer is formed inside the first wafer as a base point for removing the peripheral portion, and then the peripheral portion is peeled off from the first wafer using this modification layer as a base point.

[0029] The inventors of this invention have developed a method in which, during edge trimming of a first wafer, the peripheral portion of the first wafer is peeled off from the second wafer by inserting an insertion member (e.g., a wedge roller, a blade) into the interface between the first and second wafers forming overlapping wafers. However, when the insertion member is inserted into the interface in this way, the height position of the interface into which the insertion member is inserted is unstable due to wafer warpage and variations in the in-plane thickness of the wafer and device layers, which may prevent the proper removal of the peripheral portion of the first wafer. Therefore, there is room for improvement in conventional edge trimming methods.

[0030] According to the technology disclosed herein, the insertion position of the removal member relative to the overlapping substrate formed by bonding the first substrate and the second substrate is appropriately adjusted. Hereinafter, a wafer processing system having a peripheral removal device as a substrate processing apparatus according to this embodiment, and a wafer processing method as a substrate processing method, will be described with reference to the accompanying drawings. Furthermore, in this specification and the accompanying drawings, elements having substantially the same functional structure are labeled with the same reference numerals, thereby omitting repeated descriptions.

[0031] like Figure 1As shown, in the wafer processing system 1 described later in this embodiment, a superimposed wafer T, which is formed by bonding a first wafer W1 (which is a first substrate) with a second wafer W2 (which is a second substrate), is processed as a superimposed substrate. Furthermore, in the wafer processing system 1, the peripheral portion We of the first wafer W1 is removed. Hereinafter, the side of the first wafer W1 that is bonded to the second wafer W2 is called surface W1a, and the side opposite to surface W1a is called back surface W1b. Similarly, the side of the second wafer W2 that is bonded to the first wafer W1 is called surface W2a, and the side opposite to surface W2a is called back surface W2b. Additionally, the region in the first wafer W1 that is radially inward from the peripheral portion We (which is the object of edge trimming) is called the central portion Wc.

[0032] The first wafer W1 is, for example, a semiconductor wafer such as a silicon substrate, and a device layer D1 including multiple devices is formed on its surface W1a. Additionally, a surface film F1 for bonding with the second wafer W2 is formed on the device layer D1, and the second wafer W2 is bonded via this surface film F1. Examples of surface films F1 include oxide films (SiO2 films, TEOS films), SiC films, SiCN films, or adhesives. Furthermore, the peripheral portion We of the first wafer W1 is chamfered, and the thickness of the peripheral portion We decreases towards its leading edge. The peripheral portion We is the portion removed during edge trimming (described later), and for example, it is a radially extending range of 0.5 mm to 3 mm from the outer end of the first wafer W1. Furthermore, a laser absorption layer (not shown) can be formed at the interface between the first wafer W1 and the device layer D1 to absorb laser light irradiated into the interior of the overlapping wafer T during the removal of the peripheral portion We. Alternatively, the surface film F1 formed on the device layer D1 can also be used as a laser absorption layer.

[0033] The second wafer W2 also has, for example, the same structure as the first wafer W1, with a device layer D2 and a surface film F2 formed on surface W2a, and its periphery chamfered. Furthermore, the second wafer W2 does not need to be a device wafer with the device layer D2 formed; for example, it can be a support wafer supporting the first wafer W1. In this case, the second wafer W2 functions as a protective element for the device layer D1 of the first wafer W1.

[0034] like Figure 2 As shown, the wafer processing system 1 has a structure that connects the infeed / outfeed block G1, the conveyor block G2, and the processing block G3 into one unit. The infeed / outfeed block G1, the conveyor block G2, and the processing block G3 are arranged in the order described, starting from the negative X-axis direction.

[0035] For example, a cassette C capable of accommodating multiple overlapping wafers T is moved in and out between the in / out block G1 and the outside. A cassette mounting stage 10 is provided on the in / out block G1. In the illustrated example, multiple cassettes C, for example, three, are freely arranged in a row along the Y-axis on the cassette mounting stage 10. Furthermore, the number of cassettes C mounted on the cassette mounting stage 10 is not limited to this embodiment and can be arbitrarily determined.

[0036] On the positive X-axis side of the transfer block G2 and the cassette stage 10, a wafer transfer device 20 is disposed adjacent to the cassette stage 10. The wafer transfer device 20 is configured to move freely on a transfer path 21 extending along the Y-axis direction. Furthermore, the wafer transfer device 20 has, for example, two transfer arms 22, 22 for holding and transferring overlapping wafers T. Each transfer arm 22 is configured to move freely in the horizontal and vertical directions, and about the horizontal and vertical axes. Moreover, the structure of the transfer arms 22 is not limited to this embodiment, and any structure can be adopted. Furthermore, the wafer transfer device 20 is configured to transfer overlapping wafers T relative to the cassette C of the cassette stage 10 and the transfer device 30 described later.

[0037] On the positive X-axis direction side of the transfer block G2 and the wafer transfer device 20, a transfer device 30 for transferring overlapping wafers T is provided adjacent to the wafer transfer device 20.

[0038] The processing block G3 includes a wafer transport device 40, a peripheral removal device 50, a cleaning device 60, a backside inspection device 70, an internal modification device 80, and an interface modification device 90.

[0039] The wafer transport device 40 is configured to move freely along a transport path 41 extending in the X-axis direction. Furthermore, the wafer transport device 40 has, for example, two transport arms 42, 42 that hold and transport overlapping wafers T. Each transport arm 42 is configured to move freely in the horizontal and vertical directions, and about the horizontal and vertical axes. Moreover, the structure of the transport arms 42 is not limited to this embodiment, and any structure can be adopted. Furthermore, the wafer transport device 40 is configured to transport overlapping wafers T relative to the transport device 30, the peripheral removal device 50, the cleaning device 60, the backside inspection device 70, the internal modification device 80, and the interface modification device 90.

[0040] Peripheral removal apparatus 50 removes the peripheral portion We of the first wafer W1, i.e., edge trimming. The detailed structure of peripheral removal apparatus 50 will be described later. Cleaning apparatus 60 cleans the overlapping wafer T. Backside inspection apparatus 70 is provided, for example, stacked with cleaning apparatus 60, for inspecting the backside of the overlapping wafer T after edge trimming. Internal modification apparatus 80 irradiates the interior of the first wafer W1 with a laser (internal laser, such as a YAG laser) to form a peripheral modification layer M1 serving as the base point for the removal of the peripheral portion We and a segmentation modification layer M2 serving as the base point for the miniaturization of the peripheral portion We. Interface modification apparatus 90 irradiates the interface between the first wafer W1 and the second wafer W2, which serves as the base point for the removal of the peripheral portion We, with a laser (interface laser, such as a CO2 laser) to form the unbonded region Ae, described later.

[0041] The wafer processing system 1 described above is equipped with a control device 100, which serves as a control unit. The control device 100 is, for example, a computer, and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the overlapping wafers T in the wafer processing system 1. Additionally, the program storage unit also stores a program for controlling the operation of the various processing devices, conveying devices, and other drive systems described above to implement the wafer processing described later in the wafer processing system 1. Furthermore, the above-mentioned programs can be recorded in a computer-readable storage medium H and installed from that storage medium H into the control device 100.

[0042] The wafer processing system 1 according to this embodiment is configured as described above. Next, the peripheral removal device 50, which is the substrate processing apparatus described above, will be described.

[0043] like Figure 3 As shown, the peripheral removal device 50 has a chuck 51 as a holding member that holds the overlapping wafer T via its upper surface. The chuck 51 holds the back surface W2b of the second wafer W2 with the first wafer W1 positioned on the upper side and the second wafer W2 positioned on the lower side. Furthermore, the chuck 51 is configured to be rotatable about a vertical axis via a rotation mechanism 52, and is configured to adjust the relative circumferential position of the insertion member 53 (described later) with respect to the overlapping wafer T held on the chuck 51.

[0044] An insertion member 53, serving as a removal member, is provided on the side of the chuck 51. The peripheral portion We of the first wafer W1 is removed by inserting this insertion member 53 into the interface between the first wafer W1 and the second wafer W2. Figure 3 As shown, the insertion member 53 has a sharp front end shape when viewed from the side (e.g., a wedge roller, blade, etc.), and is configured to rotate freely about a vertical axis via a rotating mechanism (not shown). Furthermore, the insertion member 53 is configured to move relative to the overlapping wafer T held in the chuck 51 in the forward / backward direction via a horizontal moving mechanism 54, and as... Figure 4 As shown in (a), it is configured such that the relative height position between the wafer T held in the chuck 51 and the lifting mechanism 55 can be adjusted.

[0045] Furthermore, in the peripheral removal apparatus 50, the insertion member 53 is moved horizontally by the horizontal moving mechanism 54, and the insertion member 53 is inserted at the target position between the surface W1a of the first wafer W1 and the surface W2a of the second wafer W2. This causes the peripheral portion We to be pushed up from the second wafer W2. Then, with the insertion member 53 inserted into the interface, the chuck 51 is rotated, thereby peeling the peripheral portion We from the first wafer W1 (overlapping wafer T) and removing it (hereafter, the actual height at which the peripheral portion We is peeled from the second wafer W2 is sometimes referred to as the "peeling interface").

[0046] Additionally, a cup body 56 is provided on the side of the chuck 51, surrounding the chuck 51. A retrieval mechanism (not shown) for the peripheral portion We is connected to the lower part of the cup body 56, which is used to catch the peripheral portion We of the first wafer W1 that is removed from the first wafer W1 by the insertion of the insertion member 53 and discharge it to the retrieval mechanism.

[0047] A height detection mechanism 57 is provided above the chuck 51. This height detection mechanism 57 detects the height positions of the overlapping wafer T and the insertion member 53 held in the chuck 51. For example, a non-contact laser displacement meter can be used as the height detection mechanism 57. Furthermore, the height detection mechanism 57 detects the height position of the overlapping wafer T held in the chuck 51 by irradiating the peripheral portion We from the back side W1b of the first wafer W1 with a laser. The detected height position of the overlapping wafer T is output to the control device 100. Moreover, in the peripheral removal device 50, the relative height position of the insertion member 53 with respect to the overlapping wafer T is adjusted based on the detected height position of the overlapping wafer T and the pre-obtained height position of the insertion member 53. In other words, based on the detected height position of the overlapping wafer T, the height position of the insertion member 53 is adjusted by the lifting mechanism 55 to a position between the first wafer W1 and the second wafer W2, which is the target position. Furthermore, for example, the height position of the insertion member 53 can be detected by moving the insertion member 53 below the height detection mechanism 57 using the horizontal moving mechanism 54. Alternatively, for example, the height detection mechanism 57 can be moved above the insertion member 53 using a moving mechanism (not shown).

[0048] Furthermore, the height detection mechanism 57 can detect whether the peripheral portion We has been properly removed from the first wafer W1 by irradiating the edge-trimmed overlapping wafer T with a laser. Specifically, it detects the height position at the location corresponding to the peripheral portion We of the edge-trimmed first wafer W1, and compares the detected height position with the height position of the peripheral portion We of the first wafer W1 before edge trimming, thereby detecting whether the edge portion We has been trimmed. That is, the height detection mechanism 57 can operate as a "stripping inspection mechanism" according to the technology disclosed herein.

[0049] Furthermore, the presence or absence of the edge-trimmed periphery We can be checked using a stripping inspection mechanism (not shown) for checking the presence or absence of the edge-trimmed periphery We instead of the height detection mechanism 57. The stripping inspection mechanism can, for example, check the presence or absence of the periphery We by detecting the height position of the overlapping wafer T, similar to the height detection mechanism 57, or it can be checked by using, for example, an imaging unit (e.g., a CCD camera) to photograph the edge-trimmed first wafer W1.

[0050] The peripheral removal device 50 involved in this embodiment is configured as described above, but the structure of the peripheral removal device 50 is not limited to this.

[0051] For example, in the above embodiment, the relative circumferential position of the chuck 51 and the insertion member 53 is adjusted by rotating the chuck 51 using the rotating mechanism 52. However, it can also be configured to allow the insertion member 53 to move circumferentially along the overlapping wafer T in place of the rotating mechanism 52 or based on the rotating mechanism 52.

[0052] For example, a component inspection mechanism (not shown) may be provided in the peripheral removal device 50. This component inspection mechanism is used to inspect the condition of the blade tip of the inserted component 53, specifically, to check whether the inserted component 53 is damaged and the location of the damage. As a component inspection mechanism, for example, a CCD camera or a CMOS camera can be used.

[0053] For example, in the above embodiments, such as Figure 4 As shown in (a), the insertion member 53 is raised or lowered by the lifting mechanism 55, thereby adjusting the relative height position of the insertion member 53 with respect to the target position. However, the method for adjusting the height position of the insertion member 53 is not limited to this. For example, it can also be done as follows: Figure 4 As shown in (b), the chuck 51 can be raised and lowered via a lifting mechanism, for example, as shown in (b). Figure 4 The horizontal moving mechanism 54 is configured to be able to move up and down as shown in (c), and the insertion member 53 is configured to move up and down integrally with the horizontal moving mechanism 54.

[0054] For example, in the above embodiment, the height position of the overlapping wafer T is detected by irradiating the peripheral portion We from the back side W1b using the height detection mechanism 57. However, the height position of the overlapping wafer T can also be detected by irradiating the periphery We near the central portion Wc of the first wafer W1. Alternatively, the height detection mechanism 57 can irradiate the laser from the back side W2b of the second wafer W2. That is, the height position of the insertion member 53 can be adjusted by the lifting mechanism 55 with the back side W2b of the second wafer W2 as a reference.

[0055] For example, in the above embodiment, a non-contact laser displacement meter is used as the height detection mechanism 57, but a camera unit (e.g., a CCD camera, a CMOS camera, etc.) can also be used as the height detection mechanism 57, similar to the stripping inspection mechanism described above. That is, it is also possible to photograph the overlapping wafer T held in the chuck 51 and adjust the height position of the insertion member 53 based on the photographed image.

[0056] Next, the wafer processing performed using the wafer processing system 1 and the peripheral removal device 50 configured as described above will be explained. Furthermore, in this embodiment, the first wafer W1 and the second wafer W2 are bonded in a bonding device (not shown) provided outside the wafer processing system 1 to pre-form an overlapping wafer T.

[0057] First, after placing a cassette C containing multiple overlapping wafers T onto the cassette stage 10 of the transfer block G1, the overlapping wafers T are removed from cassette C by the wafer transfer device 20. The overlapping wafers T removed from cassette C are then transferred to the wafer transfer device 40 via the transfer device 30, and subsequently to the interface modification device 90. In the interface modification device 90, as... Figure 5 As shown in (a), while rotating the overlapping wafer T (first wafer W1), a laser (e.g., a CO2 laser with a wavelength of 8.9 μm to 11 μm) is irradiated onto the interface between the first wafer W1 and the device layer D1 (more specifically, the aforementioned laser absorption layer formed at the interface) to form an unbonded region Ae. Figure 6 Step S1).

[0058] In the unbonded region Ae, the interface between the first wafer W1 and the device layer D1 is modified or peeled off, and the bonding strength between the first wafer W1 and the second wafer W2 decreases or is eliminated. Thus, an annular unbonded region Ae is formed at the interface between the first wafer W1 and the device layer D1, and a bonding region Ac, where the first wafer W1 and the second wafer W2 are bonded, is formed radially inside this unbonded region Ae. In the edge trimming described later, the peripheral portion We of the first wafer W1, which is the target of removal, is removed. Because the unbonded region Ae exists in this way, the peripheral portion We can be appropriately removed.

[0059] Next, the overlapping wafer T with the unbonded region Ae formed is transported to the internal modification device 80 using the wafer transfer device 40. In the internal modification device 80, as... Figure 5 (b) and Figure 7 As shown, a perimeter modification layer M1 and a segmentation modification layer M2 are formed inside the first wafer W1. Figure 6 Step S2). The peripheral modification layer M1 becomes the base point when removing the peripheral portion We in the edge trimming described later. The segmentation modification layer M2 becomes the base point for miniaturizing the removed peripheral portion We. Furthermore, in the accompanying drawings used in the following description, illustrations of the segmentation modification layer M2 are sometimes omitted to avoid complicating the illustrations.

[0060] Here, the formation position of the peripheral modification layer M1 is determined to be slightly radially inward than the inner end of the unbonded region Ae formed in step S1. Ideally, the peripheral modification layer M1 should be formed at a position overlapping the boundary (hereinafter referred to as the "boundary") between the bonded region Ac and the unbonded region Ae. However, sometimes the peripheral modification layer M1 is formed radially offset, for example, due to processing errors. Moreover, when the peripheral modification layer M1 is formed at a position radially outward from the boundary, i.e., the unbonded region Ae, it sometimes results in the first wafer W1 floating relative to the second wafer W2 after edge trimming. In this regard, by controlling the formation of the peripheral modification layer M1 to be radially inward than the boundary, even if the formation position of the peripheral modification layer M1 is offset, it is possible to form it at a position overlapping the boundary, or at a position radially outward but close to the boundary, thereby suppressing the formation of the peripheral modification layer M1 at a position radially outward from the boundary.

[0061] In addition, such as Figure 5 As shown in (b), crack C1 extends along the thickness direction from the peripheral modification layer M1 inside the first wafer W1. Similarly, crack C2 extends along the thickness direction from the segmentation modification layer M2 inside the first wafer W1 (not shown).

[0062] The overlapping wafer T, in which a peripheral modification layer M1 and a partition modification layer M2 have been formed inside the first wafer W1, is transported to the peripheral removal device 50 via the wafer transport device 40. In the peripheral removal device 50, as... Figure 5 As shown in (c), the peripheral portion We of the first wafer W1 is removed, i.e., edge trimming is performed. Figure 6 Step S3). At this time, the peripheral portion We is peeled off from the central portion Wc of the first wafer W1 using the peripheral modification layer M1 and the crack C1 as reference points, and is peeled off from the device layer D1 (second wafer W2) using the unbonded region Ae as reference points. In addition, at this time, the removed peripheral portion We is miniaturized using the dividing modification layer M2 and the crack C2 as reference points.

[0063] The edge trimming performed in the peripheral removal device 50 will be described in detail.

[0064] During the edge trimming of the periphery We of the first wafer W1, before the overlapping wafer T is moved into the periphery removal device 50, the height position of the insertion member 53 inside the periphery removal device 50 is obtained. Figure 8 Step S3-0). Specifically, the insertion member 53 is moved below the height detection mechanism 57 by the horizontal moving mechanism 54, and a laser is irradiated onto the insertion member 53 to detect its height position. Furthermore, the height position of the insertion member 53 can be detected and obtained by the height detection mechanism 57 for each process performed on the overlapping wafer T by the peripheral removal device 50, or it can be obtained by referring to the height position of the insertion member 53 pre-stored in the control device 100.

[0065] Regarding the overlapping wafer T being moved into the peripheral removal device 50, first adjust the horizontal orientation of the overlapping wafer T (notch alignment) ( Figure 8 Step S3-1). During notch alignment, while rotating the overlapping wafer T held in the chuck 51 by means of the rotation mechanism 52, the position of the notch (not shown) formed on the periphery We of the first wafer W1 is detected and the position of the notch is adjusted.

[0066] Next, the height position of the insertion member 53 to be inserted into the interface of the overlapping wafer T is adjusted (height alignment). Figure 8 Step S3-2). When performing height alignment, such as Figure 9 As shown in (a), a height detection mechanism 57 is used to detect the height position of the upper surface (back surface W1b of the first wafer W1) of the overlapping wafer T held in the chuck 51. Furthermore, based on the detected height position of the upper surface of the overlapping wafer T and the height position of the insertion member 53 obtained in step S3-0, the height position of the insertion member 53 is adjusted by a lifting mechanism 55. At this time, the height position of the insertion member 53 is determined to be a predetermined position between the first wafer W1 and the second wafer W2, which is the target position for insertion of the insertion member 53.

[0067] Here, if the overlapping wafer T warps as described above, or if there is a deviation in the in-plane thickness of the overlapping wafer and the device layer, the target position for inserting the insertion member 53 when removing the peripheral portion We may be unstable in the circumferential direction of the overlapping wafer T. Moreover, if the target position is unstable, when the overlapping wafer T is rotated while inserting the insertion member 53 as described later, the target position may shift relative to the insertion height of the insertion member 53, and the peripheral portion We may not be properly peeled off.

[0068] Therefore, in the height alignment described in this embodiment, while rotating the overlapping wafer T held in the chuck 51 via the rotation mechanism 52, a laser is irradiated onto the peripheral portion We, thereby detecting the height position of the overlapping wafer T over its entire circumference. Furthermore, when the overlapping wafer T is rotated to remove the peripheral portion We as described later, the height position of the insertion member 53 is adjusted based on the height position of the overlapping wafer T detected in this way and the relative circumferential position of the insertion member 53 relative to the overlapping wafer T.

[0069] When aligning the height of the insertion member 53, then, as Figure 9 As shown in (b), the insertion member 53 is inserted into the target position using the horizontal movement mechanism 54. Figure 8 Step S3-3). Specifically, the insertion member 53 is inserted into the insertion height position determined in step S3-2, that is, the predetermined position between the first wafer W1 and the second wafer W2. When the insertion member 53 is inserted between the first wafer W1 and the second wafer W2, as... Figure 9 As shown in (b), stress N acts in the direction of peeling the peripheral portion We of the first wafer W1 from the second wafer W2, and then, as Figure 9 As shown in (c), the peripheral portion We is peeled off based on the peripheral modification layer M1 and the crack C1. At this time, the insertion member 53 has, for example, a wedge shape, so as long as the front end of the insertion member 53 is inserted between the first wafer W1 and the second wafer W2, stress N can be appropriately applied to the peripheral portion We through the insertion member 53. Furthermore, at this time, an unbonded region Ae is formed at the interface between the first wafer W1 and the device layer D1, thereby reducing or eliminating the bonding strength between the first wafer W1 and the second wafer W2. Therefore, when stress N is applied through the insertion of the insertion member 53, the peripheral portion We peels off from the second wafer W2 based on the unbonded region Ae where the bonding strength has decreased.

[0070] Like this, as long as it can be like Figure 9As shown in (b), by inserting the insert member 53 between the first wafer W1 and the second wafer W2 and applying stress N to the peripheral portion We, the peripheral portion We can be peeled off from the second wafer W2 with the unbonded region Ae as the reference point. In other words, when removing the peripheral portion We, even if the insertion height of the insert member 53 relative to the overlapping wafer T is not necessarily consistent with the formation height of the unbonded region Ae, which becomes the peeling interface, the peripheral portion We can still be appropriately removed from the second wafer W2. Moreover, when the insertion height of the insert member 53 is different from the height position of the peeling interface of the peripheral portion We, collision between the insert member 53 and the overlapping wafer T can be suppressed, thereby enabling safe removal of the peripheral portion We. Furthermore, more preferably, the insertion height of the insert member 53 relative to the overlapping wafer T is the interface between the bonding surface of the first wafer W1 and the second wafer W2, i.e., the interface between the surface film F1 and the surface film F2. This is because, as shown in Figure 9 As shown in (b), when a small space is formed at the interface between the first wafer W1 and the second wafer W2, i.e., the interface between surface film F1 and surface film F2, which serves as a non-interface, the insertion member 53 can be easily inserted into this space. Therefore, the stress N applied to the peeling interface can be efficiently applied.

[0071] Furthermore, it is preferable to avoid Figure 7 The region between one segmented modified layer M2 and other adjacent segmented modified layers M2 (hereinafter, sometimes referred to as the "segmentation region R"), i.e., the formation position of the segmented modified layer M2, determines the circumferential insertion position of the insert member 53 relative to the superimposed wafer T. Furthermore, it is more preferable that the insertion position of the insert member 53 is as follows: Figure 10 As shown in (a), the upstream side of the segmentation region R that rotates with the superimposed wafer T (near the aforementioned segmentation modification layer M2). By inserting the insertion member 53 into the upstream side of the segmentation region R in this way, a segmentation modification layer M2 is broken by the tensile force caused by the peeling of the peripheral portion We.

[0072] After the insertion member 53 is inserted into the superimposed wafer T, the superimposed wafer T, held in the chuck 51, is rotated by the rotation mechanism 52, thereby causing the peeling of the peripheral portion We to extend circumferentially (in the rotation direction of the superimposed wafer T). Figure 8 Steps S3-4). At this time, the insertion member 53 rotates about the vertical axis in accordance with the rotation of the overlapping wafer T. Then, when... Figure 10 As shown in (b), when the inserted member 53 reaches the other end of the segmented region R (near the aforementioned other segmented modified layer M2), the other segmented modified layer M2 breaks due to the tensile force caused by the peeling of the peripheral portion We, thereby reducing the peripheral portion We to a smaller size. Furthermore, when the peripheral portion We is peeled and reduced to a smaller size along the entire length of the segmented region R in this way, as... Figure 9 (d) and Figure 10 As shown in (c), the peripheral portion We in the segmented region R is removed from the first wafer W1 (overlapping wafer T). Figure 8 (Steps S3-5). In addition, the removed peripheral portion We falls into the interior of the cup body 56 due to its own weight, and is then recycled to a recycling mechanism (not shown).

[0073] After the peripheral portion We in one segmented region R is removed, the removal of the peripheral portion We in the next adjacent segmented region R is then performed. At this time, if the superimposed wafer T continues to rotate after the peripheral portion We in one segmented region R has been removed, the insertion member 53 may collide with one end of the peripheral portion We in the next segmented region R, thereby applying a reaction force in the opposite direction of the rotation of the superimposed wafer T, which may prevent the peripheral portion We from being removed properly.

[0074] Therefore, preferably, when removing the peripheral portion We in the next segmented region R, before starting to peel off the peripheral portion We, the insertion member 53 is retracted by the horizontal moving mechanism 54, and the insertion member 53 is inserted again upstream of the segmented region R that avoids the segmentation modification layer M2. This allows for more appropriate fragmentation and removal of the peripheral portion We.

[0075] Furthermore, as described above, when the height position between the first wafer W1 and the second wafer W2, which serve as the target location, is unstable in the circumferential direction of the overlapping wafer T, the insertion height position of the insertion member 53 may shift from the target position as the overlapping wafer T rotates, potentially preventing the proper removal of the peripheral portion We. Regarding this point, in this embodiment, the height position of the insertion member 53 is adjusted based on the circumferential position of the overlapping wafer T, detected in step S3-2. In other words, the insertion height of the insertion member 53 on the entire circumference of the overlapping wafer T is calculated based on the detected height position, and the height of the insertion member 53 is adjusted by the lifting mechanism 55 to follow the calculated insertion height. This allows for the proper removal of the peripheral portion We along the entire circumference of the overlapping wafer T.

[0076] After the peripheral portion We is removed on the entire periphery of the overlapping wafer T, a process verification check is then performed to confirm the removal status of the peripheral portion We. Figure 6Step S4). Specifically, the height detection mechanism 57 is used to detect the height position at the location corresponding to the edge portion We after edge trimming, and the detected height position information is compared with the height position information of the edge portion We before edge trimming, thereby confirming whether the edge portion We has been properly removed. Alternatively, as described above, the camera unit, which is the height detection mechanism 57, can be used to capture an image at the location corresponding to the edge portion We after edge trimming, thereby performing a process confirmation check.

[0077] In addition, the aforementioned component inspection mechanism (not shown) can be used in parallel with process verification checks to check whether the inserted component 53 is damaged, the location of any damage, etc. Alternatively, the component inspection mechanism can also be used to perform the aforementioned process verification checks.

[0078] When it is determined during process validation that edge trimming was not performed properly, the location of the improperly trimmed edge, i.e., the circumferential position of the residual peripheral portion We on the overlapping wafer T and the size of the residual peripheral portion We, are detected. Furthermore, after the insertion member 53 is moved relative to the circumferential position of the residual peripheral portion We on the overlapping wafer T, the residual peripheral portion We is removed again by inserting the insertion member 53. Figure 6 Step S3), and a process validation check is performed after this re-removal process. Figure 6 Step S4).

[0079] Furthermore, in the process of removing the peripheral portion We again after the process verification check, the insertion height of the insertion member 53 relative to the superimposed wafer T can be determined either based on the height position detected during the process verification check in step S4, or based on the height position detected during height alignment in step S3-2.

[0080] Next, the overlapping wafer T, which has been deemed to have undergone appropriate edge trimming during process validation, is transferred to the cleaning unit 60 via the wafer transfer device 40. In the cleaning unit 60, the overlapping wafer T, after the peripheral portion We has been removed, is cleaned. Figure 6 Step S5).

[0081] Next, the overlapping wafer T is transported to the backside inspection device 70 via the wafer transport device 40. In the backside inspection device 70, the adhesion of microparticles on the backside of the overlapping wafer T after the peripheral portion We has been removed, i.e., the backside W2b of the second wafer W2, is inspected. Figure 6 (Step S6). In addition, in the backside inspection device 70, the backside W1b of the first wafer W1 can also be inspected together with the backside W2b of the second wafer W2.

[0082] Subsequently, the overlapping wafer T, which has undergone all wafer processing, is transferred via wafer transfer device 20 to the cassette C of cassette stage 10 via transfer device 30. In this way, a series of wafer processing steps in wafer processing system 1 are completed.

[0083] According to the above embodiments, since the insertion member 53 is configured to move freely up and down via the lifting mechanism 55, the insertion height of the insertion member 53 can be appropriately adjusted even when the target position for insertion of the insertion member 53 is unstable. Furthermore, in the above embodiments, the target position for insertion of the insertion member 53, i.e., the height position between the first wafer W1 and the second wafer W2, is detected along the entire circumference of the overlapping wafer T, thus allowing the insertion member 53 to move up and down in response to changes in this target position. That is, according to this embodiment, the peripheral portion We can be appropriately removed from the first wafer W1.

[0084] Furthermore, in the height alignment of the above embodiments, height position detection is performed on the entire circumference of the overlapping wafer T, and then the insertion member 53 is inserted. The height position of the insertion member 53 is adjusted during the rotation of the overlapping wafer T to remove the peripheral portion We. However, the edge trimming of the peripheral portion We ( Figure 6 The timing of the detection of the height position of the overlapping wafer T and the calculation of the insertion height of the insertion member 53 in step S3) (hereinafter referred to as "height position detection, etc.") is not limited to this. For example, the height position of the overlapping wafer T can be detected by the height detection mechanism 57 at a position upstream of the insertion position of the insertion member 53 in the rotation direction of the overlapping wafer T, and the insertion of the insertion member 53 and the adjustment of its height position can be performed downstream of the height detection mechanism 57 based on the detected height position information. In other words, the detection of the height position of the overlapping wafer T and the insertion of the insertion member 53 and the adjustment of its height position can be performed simultaneously.

[0085] Furthermore, in the above embodiments, after detecting the height position of the overlapping wafer T around its entire circumference during height alignment, the height position of the insertion member 53 is adjusted and the peripheral portion We is removed based on the detected height position information. However, this height alignment and removal of the peripheral portion We can also be performed for each segmented region. That is, for example, in the edge trimming in step S3, the detection of the height position of the overlapping wafer T in one segmented region and the removal of the peripheral portion We in one segmented region can be repeated over the entire circumference of the overlapping wafer T. Alternatively, the detection of the height position of the overlapping wafer T in the next segmented region can be performed in parallel while removing the peripheral portion We in one segmented region.

[0086] Furthermore, in the above embodiments, after detecting the height position of the overlapping wafer T, for example downstream of the height detection mechanism 57 in the rotation direction of the overlapping wafer T, or in a step after the height position detection, the height position of the insertion member 53 inserted into the overlapping wafer T can be adjusted. However, height position detection and height position adjustment can also be performed simultaneously and in parallel. That is, the height position of the insertion member 53 can be made to follow the height position information obtained by height position detection in real time.

[0087] Furthermore, in cases where the height position of the insertion member 53 is followed in real time to remove the peripheral portion We, the method for adjusting the height position of the overlapping wafer T is not limited to the method based on the height position detected by the laser displacement meter, but can also involve physical contact between the guide member and the wafer.

[0088] Specifically, such as Figure 11 As shown, the peripheral removal apparatus 150 according to the second embodiment has a guide member 151 instead of a height detection mechanism 57. The guide member 151 includes a contact member 152 (e.g., a roller) that travels in contact with the upper surface of the overlapping wafer T, i.e., the back surface W1b of the first wafer W1, and an arm member 153 that integrally connects the contact member 152 to the insertion member 53. Furthermore, the relative height position relationship between the contact member 152 and the insertion member 53 is set to a pre-obtained distance from the back surface W1b of the first wafer W1 to the target position for insertion of the insertion member 53. Moreover, in this embodiment, as the contact member 152 rises and falls, the insertion member 53 rises and falls integrally via the arm member 153. In addition, the insertion member 53 is configured to move freely in the horizontal direction independently of the contact member 152 and the arm member 153 via a horizontal movement mechanism 54.

[0089] During edge trimming in the peripheral removal apparatus 150, the contact member 152 contacts the upper surface of the overlapping wafer T held in the chuck 51, i.e., the back surface W1b of the first wafer W1. When the overlapping wafer T held in the chuck 51 is rotated in this state, the contact member 152 moves up and down in response to changes in the height position of the upper surface of the overlapping wafer T. Here, the insertion member 53 is integrally connected to the contact member 152 via the arm member 153, therefore, the insertion member 53 moves up and down in response to changes in the height position of the contact member 152, i.e., changes in the height position of the upper surface of the overlapping wafer T. In addition, as described above, since the relative height position of the contact member 152 and the insertion member 53 is set such that the height position of the insertion member 53 coincides with the target position, the insertion member 53 moves up and down in response to changes in the target position.

[0090] Therefore, by inserting the insertion member 53 into the overlapping wafer T while the contact member 152 is in contact with the upper surface of the overlapping wafer T, even if the height position between the first wafer W1 and the second wafer W2, which is the target position, is unstable, the insertion height position of the insertion member 53 can be appropriately followed.

[0091] Furthermore, in the edge trimming of the above embodiments, the height position of the insertion member 53 follows the target position calculated based on the height position of the overlapping wafer T, but the height position of the insertion member 53 inserted into the overlapping wafer T can also be fixed. That is, for example, if the target position calculated by height alignment is stable over the entire circumference, or even if it is unstable but its deviation converges within an acceptable threshold, the peripheral portion We can be appropriately removed even when the height position of the insertion member 53 is fixed. In addition, for example, the deviation of the target position from the threshold can be calculated based on the average, center, maximum, minimum, etc., of the detected height position information over the entire circumference. Moreover, by fixing the height position of the insertion member 53 in this way during edge trimming, control during edge trimming becomes easier, and the burden on the mechanism can be reduced.

[0092] Alternatively, the insertion height position of the insertion member 53 relative to the superimposed wafer T can be determined for each segmented region R of the peripheral portion We. Furthermore, for each segmented region R of the peripheral portion We, the deviation of the target position from a threshold value based on the average, central, maximum, and minimum values ​​of the height position information can be calculated, and a determination can be made for each segmented region R whether to fix the height position of the insertion member 53 or to make the insertion member 53 follow the target position.

[0093] Ideally, the insertion height position of the insertion member 53 relative to the overlapping wafer T should follow the target position over the entire circumference of the periphery We. However, in this case, control during edge trimming becomes complex, and the burden on the mechanism may increase. Therefore, in segmented regions R where the deviation of the target position from the threshold is large, the insertion height position of the insertion member 53 should follow the target position, while in segmented regions R where the deviation of the target position is small, the insertion height position of the insertion member 53 should be fixed. This reduces the movement of the insertion member 53 relative to the height direction compared to following the target position over the entire circumference, thereby simplifying control during edge trimming and reducing the burden on the mechanism.

[0094] On the other hand, compared to fixing the insertion height position over the entire circumference, the fixed height position of the insertion member 53 can be calculated based on the average, central, maximum, and minimum values ​​of the height position information within a narrower range (nearest range). Therefore, compared to referring to height position information over the entire circumference, deviations between the insertion height position of the insertion member 53 and the target position can be suppressed, thereby enabling stable edge trimming.

[0095] Furthermore, in the above embodiments, based on the height position of the overlapping wafer T detected by the height detection mechanism 57 and the pre-obtained height position of the insertion member 53, the relative height position of the insertion member 53 relative to the overlapping wafer T during edge trimming is adjusted by the lifting mechanism 55. However, the position adjustment of the insertion member 53 is not limited to the height direction; it can also be adjusted in the horizontal direction (the insertion depth direction of the insertion member 53 relative to the overlapping wafer T) by the horizontal moving mechanism 54 during edge trimming.

[0096] Sometimes, the overlapping wafer T, which is the target of edge trimming, is held in the chuck 51 with the center of the peripheral modification layer M1, which is formed either on the overlapping wafer T itself or in a ring shape, eccentrically relative to the rotation center of the chuck 51. Furthermore, in the overlapping wafer T, which is the target of edge trimming, the case where the peripheral modification layer M1 is formed eccentrically relative to the first wafer W1 due to various conditions is also considered. In this case, even if the height position of the insertion member 53 relative to the overlapping wafer T is properly controlled, the horizontal position of the insertion member 53 relative to the formation position of the peripheral modification layer M1 may change when the chuck 51 (overlapping wafer T) rotates during edge trimming, making it impossible to properly remove the peripheral portion We. Therefore, in this embodiment, the horizontal position of the insertion member 53 is controlled by the horizontal movement mechanism 54 in a manner that follows the eccentricity of the peripheral modification layer M1.

[0097] Specifically, such as Figure 12As shown, an eccentricity detection mechanism 110 is also provided above the chuck 51. This eccentricity detection mechanism 110 detects the eccentricity of the outer periphery of the overlapping wafer T (first wafer W1) held in the chuck 51 or the peripheral modification layer M1 formed inside it. Furthermore, the eccentricity detection mechanism 110 can be configured to detect not only the eccentricity of the outer periphery of the overlapping wafer T or the peripheral modification layer M1 inside the first wafer W1, but also the horizontal position of the overlapping wafer T and the insertion member 53. That is, the eccentricity detection mechanism 110 can operate as a "horizontal detection mechanism" according to the technology disclosed herein. For example, a non-contact laser displacement meter, a CCD camera, or an IR camera can be used as the eccentricity detection mechanism 110. Furthermore, the eccentricity detection mechanism 110 detects, for example, the eccentricity of the outer periphery of the overlapping wafer T (first wafer W1) or the eccentricity of the peripheral modification layer M1 formed inside the first wafer W1 by detecting the end position of the overlapping wafer T (first wafer W1, second wafer W2) on the entire circumference and the formation position of the peripheral modification layer M1 (distance from the end position). The detected outer periphery position or eccentricity is output to the control device 100. Moreover, in the peripheral removal device 50, based on the detected outer periphery position or the eccentricity of the peripheral modification layer M1, and the pre-obtained horizontal position of the insertion member 53 capable of peeling off the peripheral portion We, the relative horizontal position (insertion depth) of the insertion member 53 relative to the overlapping wafer T is adjusted. Specifically, when there is only a concern about the outer periphery of the detected overlapping wafer T (first wafer W1), i.e., the center of the overlapping wafer T (first wafer W1) held in the chuck 51 being off-center relative to the rotation center of the chuck 51, the insertion depth of the insertion member 53 relative to the target depth can be controlled by following the outer periphery of the overlapping wafer T (first wafer W1). Furthermore, if the formation location of the peripheral modification layer M1 is off-center relative to the center of the overlapping wafer T, the insertion depth of the insertion member 53 relative to the target depth can be controlled by following the amount of off-center.

[0098] Furthermore, the aforementioned "insertion depth" refers to the distance between the outer end of the overlapping wafer T (first wafer W1) and the insertion member 53 when the insertion member 53 is inserted into the overlapping wafer T. Additionally, the aforementioned "target depth" refers to the insertion depth of the insertion member 53 that allows the peripheral portion We to be peeled off from the first wafer W.

[0099] Furthermore, for example, if the eccentricity of the peripheral modification layer M1 detected by the eccentricity detection mechanism 110 is stable over the entire circumference, or if even if it is unstable, its deviation converges within an acceptable threshold, the insertion depth of the insertion member 53 can be fixed. Moreover, the deviation of the eccentricity relative to the threshold can be calculated, for example, based on the average, central, maximum, or minimum values ​​of the distance from the outer periphery of the overlapping wafer T (first wafer W1) or the formation position of the peripheral modification layer M1 detected by the eccentricity detection mechanism 110, i.e., the distance from the end position of the overlapping wafer T. Furthermore, by fixing the insertion depth of the insertion member 53 during edge trimming in this way, control during edge trimming becomes easier, and the burden on the mechanism can be reduced.

[0100] Alternatively, the insertion depth of the insertion member 53 relative to the superimposed wafer T can be determined for each segmented region R of the peripheral portion We. Furthermore, for each segmented region R of the peripheral portion We, the deviation of the eccentricity relative to the formation position of the outer periphery or peripheral modification layer M1 based on the superimposed wafer T (first wafer W1), i.e., the average value, central value, maximum value, minimum value, etc. of the distance from the end position of the superimposed wafer T, can be calculated, and for each segmented region R, it can be determined whether to fix the insertion depth of the insertion member 53 or to make the insertion member 53 follow the target position.

[0101] By determining the insertion depth of the insertion member 53 for each segmented region R of the peripheral portion We in this way, similar to determining the insertion height position of the insertion member 53 for each segmented region R of the peripheral portion We, control during edge trimming becomes easier, and the burden on the mechanism is reduced. Furthermore, deviations between the insertion depth of the insertion member 53 and the target depth can be suppressed, thereby enabling stable edge trimming.

[0102] Furthermore, a pressing member (not shown) can be provided in the peripheral removal device to correct the warping generated on the overlapping wafer T at least during edge trimming of the first wafer W1. In the above embodiment, the deviation of the target position caused by the warping and in-plane thickness of the overlapping wafer T is calculated by detecting the height position along the entire circumference of the overlapping wafer T, and the height position of the insertion member 53 is adjusted based on this deviation. However, by eliminating the warping of the overlapping wafer T by pressing the member during edge trimming in this way, the deviation of the target position, i.e., the adjustment amount of the height position of the insertion member 53, can be reduced. That is, the peripheral portion We can be removed from the first wafer W1 more appropriately.

[0103] Furthermore, in the peripheral removal apparatus, to increase the production cycle time for removing the peripheral portion We, the process is performed while the overlapping wafer T held in the chuck 51 is continuously rotated. However, in this case, the impact on the insertion member 53 inserted into the overlapping wafer T is relatively large, which may lead to damage to the insertion member 53 or a reduction in its lifespan. For example, the impact on the insertion member 53 can be reduced by setting the tip of the insertion member 53 to an acute angle, but in this case, the insertion member 53 may be damaged due to a small impact, and its lifespan may still be reduced. On the other hand, if the tip of the insertion member 53 is set to an obtuse angle, although damage to the insertion member 53 is suppressed, the pressing load required to push the peripheral portion We up increases, and the risk of decreased edge trimming quality and damage to the overlapping wafer T may increase.

[0104] Therefore, in order to properly insert the insert member 53 into the overlapping wafer T and also suppress defects in the insert member 53, a cut portion as the starting point for peeling can be formed at a predetermined position between the first wafer W1 and the second wafer W2, which are the target positions, before inserting the insert member 53.

[0105] Specifically, such as Figure 13 As shown, the peripheral removal apparatus 250 according to the third embodiment is provided with a starting point forming member 251, which is used to form a cut portion Tc as the starting point for peeling at a target location. The structure of the starting point forming member 251 is arbitrary, for example, it has a rectangular plate-shaped cutting edge 251a at the front end. In addition, the starting point forming member 251 is configured to be movable in the forward and backward direction relative to the overlapping wafer T held in the chuck 51 by a horizontal moving mechanism 54, and is configured to be adjustable in height relative to the overlapping wafer T by a lifting mechanism 55. Furthermore, the starting point forming member 251 can be configured to move integrally with the insertion member 53, or it can be configured to move independently of the insertion member 53.

[0106] In the edge trimming process of the peripheral removal device 250, before inserting the insertion member 53 to the target position, the cutting edge 251a of the starting point forming member 251 is inserted into the target position to form a cut Tc. Furthermore, the number of cuts Tc formed in the circumferential direction of the overlapping wafer T can be arbitrarily determined; they can be formed in only one location or in multiple locations in the circumferential direction. Alternatively, for example, cuts Tc can be formed over the entire circumference of the overlapping wafer T. However, if the overlapping wafer T is rotated while the starting point forming member 251 is inserted into the target position, the cutting edge 251a may be impacted as described above, resulting in damage. Therefore, if cuts Tc are formed over the entire circumference of the overlapping wafer T, it is preferable to repeatedly insert and retract the starting point forming member 251.

[0107] Furthermore, in this embodiment, the insertion member 53 is inserted into the notch Tc formed at the target location. Since the peeling of the peripheral portion We originates from the notch Tc formed at the target location, the peeling of the peripheral portion We can be performed easily. Additionally, by forming the notch Tc in this way, the pressing load when inserting the insertion member 53 can be reduced, thereby reducing the risk of degraded edge trimming quality and damage to the overlapping wafer T. Furthermore, the risk of damage to the insertion member 53 and reduced lifespan can also be reduced.

[0108] Furthermore, to make it easier for the insertion member 53 to be inserted into the cut portion Tc, the formed cut portion Tc can be enlarged in the thickness direction of the overlapping wafer T. Specifically, when the cutting edge 251a is inserted into the target position, the starting point forming member 251 is swung in the vertical direction by the lifting mechanism 55, thereby enlarging the formed cut portion Tc.

[0109] Furthermore, when the starting point forming member 251 is provided in the peripheral removal device 250 as described above, the height detection mechanism 57 is preferably configured to also perform height alignment of the starting point forming member 251. In other words, it is desirable, for example, to be configured to move the starting point forming member 251 below the height detection mechanism 57 via the horizontal movement mechanism 54 and the lifting mechanism 55. Alternatively, for example, it may be configured to move the height detection mechanism 57 above the starting point forming member 251.

[0110] Alternatively, when the starting point forming member 251 is provided in the peripheral removal device 250, a member inspection mechanism (not shown) can be used in parallel with the above-mentioned process verification inspection to check whether the starting point forming member 251 has defects, the location of defects, etc.

[0111] Furthermore, in the above embodiments, the example described is the removal of the peripheral portion We of the first wafer W1 from the superimposed wafer T formed by bonding the first wafer W1 and the second wafer W2. However, the technology disclosed herein can also be applied to the case where the first wafer W1 is separated into a surface W1a side and a back side W1b side for thinning. Specifically, as Figure 14 As shown, when a peripheral modification layer M1, which serves as the starting point for peeling off the peripheral portion We of the first wafer W1, and an inner surface modification layer M3, which serves as the starting point for separation, are formed inside the first wafer W1, and the peripheral portion We of the first wafer W1 is integrally removed from the second wafer W2 (overlapping wafer T) along with the back side W1b of the first wafer W1, the height position of the insertion member 53, which is the height position between the first wafer W1 and the second wafer W2, which is the target position for insertion of the insertion member 53, can be appropriately adjusted.

[0112] Furthermore, the technology disclosed herein can also be applied to the case of removing the first wafer W1 entirely from the second wafer W2 and transferring the device layer D1 formed on the first wafer W1 to the second wafer W2, i.e., laser lift-off processing of overlapping wafers T. Specifically, such as Figure 15 As shown, when an unbonded region Ae is formed on the entire surface of the first wafer W1 and the device layer D1, and the entire surface of the first wafer W1 is peeled off from the second wafer W2 (overlapping wafer T) with the unbonded region Ae as the base point, the height position of the insertion member 53, which is the height position between the first wafer W1 and the second wafer W2, can be appropriately adjusted for the target position for insertion of the insertion member 53, i.e., the height position between the first wafer W1 and the second wafer W2.

[0113] Furthermore, in the above embodiments, an unbonded region Ae is formed in the interface modification apparatus 90 of the wafer processing system 1, but the timing of the formation of the unbonded region Ae is not limited thereto. For example, the unbonded region Ae may be formed on the overlapping wafer T after it has been formed but before it has been moved into the wafer processing system 1. Alternatively, the unbonded region Ae may be formed on the first wafer W1 outside the wafer processing system 1 before it is bonded to the second wafer W2.

[0114] Furthermore, the location of the unbonded region Ae is not limited to the interface between the first wafer W1 and the device layer D1. For example, it can be formed on the surface film F1 or at the bonding interface between the first wafer W1 and the second wafer W2.

[0115] It should be considered that the embodiments disclosed herein are illustrative in all respects and not restrictive. The above embodiments may be omitted, substituted, or modified in various ways without departing from the appended claims and their spirit.

[0116] Explanation of reference numerals in the attached figures

[0117] 50: Peripheral removal device; 51: Chuck; 53: Insertion component; 55: Lifting mechanism; 100: Control device; T: Overlapping wafer; W1: First wafer; W2: Second wafer.

Claims

1. A substrate processing apparatus for processing an overlapping substrate formed by bonding a first substrate and a second substrate, wherein, Inside the first substrate, there is a peripheral modification layer that serves as a base point for peeling off the peripheral portion of the first substrate, and a segmentation modification layer that serves as a base point for dividing the peripheral portion into multiple segmented regions. The substrate processing apparatus includes: A retaining member that holds the overlapping substrate; A removal member, which is inserted between the first substrate and the second substrate, at least peels the peripheral portion of the first substrate from the second substrate; A lifting mechanism that adjusts the relative height position of the removing member with respect to the holding member; A height detection mechanism, the detector being held at the height position of the overlapping substrate of the holding member; A horizontal detection mechanism that detects the outer periphery of the first substrate or the eccentricity of the peripheral modification layer formed inside the first substrate; A horizontal moving mechanism that moves the removal member relative to the overlapping substrate in a forward and backward direction; and The control unit controls the operation of the lifting mechanism. The control unit controls the operation of the lifting mechanism to adjust the relative height position of the removal member to the target insertion position of the removal member over the entire circumference of the overlapping substrate. When the removal component is inserted, the control unit controls the operation of the lifting mechanism to fix the height position of the removal component at a height position calculated based on the height position of each segmented region detected by the height detection mechanism. When the removal component is inserted, the control unit controls the operation of the horizontal movement mechanism to fix the horizontal position of the removal component at a depth position calculated based on the eccentricity detected by the horizontal detection mechanism.

2. A substrate processing apparatus for processing an overlapping substrate formed by bonding a first substrate and a second substrate, wherein, Inside the first substrate, there is a peripheral modification layer that serves as a base point for peeling off the peripheral portion of the first substrate, and a segmentation modification layer that serves as a base point for dividing the peripheral portion into multiple segmented regions. The substrate processing apparatus includes: A retaining member that holds the overlapping substrate; A removal member, which is inserted between the first substrate and the second substrate, at least peels the peripheral portion of the first substrate from the second substrate; A lifting mechanism that adjusts the relative height position of the removing member with respect to the holding member; A height detection mechanism, the detector being held at the height position of the overlapping substrate of the holding member; A horizontal detection mechanism that detects the outer periphery of the first substrate or the eccentricity of the peripheral modification layer formed inside the first substrate; A horizontal moving mechanism that moves the removal member relative to the overlapping substrate in a forward and backward direction; and The control unit controls the operation of the lifting mechanism. The control unit controls the operation of the lifting mechanism to adjust the relative height position of the removal member to the target insertion position of the removal member over the entire circumference of the overlapping substrate. When the removal component is inserted, the control unit controls the operation of the lifting mechanism to fix the height position of the removal component at a height position calculated based on the height position of each segmented region detected by the height detection mechanism. When the removal member is inserted, the control unit controls the operation of the horizontal movement mechanism so that the horizontal position of the removal member moves horizontally in accordance with the eccentricity detected by the horizontal detection mechanism.

3. A substrate processing apparatus for processing an overlapping substrate formed by bonding a first substrate and a second substrate, wherein, Inside the first substrate, there is a peripheral modification layer that serves as a base point for peeling off the peripheral portion of the first substrate, and a segmentation modification layer that serves as a base point for dividing the peripheral portion into multiple segmented regions. The substrate processing apparatus includes: A retaining member that holds the overlapping substrate; A removal member, which is inserted between the first substrate and the second substrate, at least peels the peripheral portion of the first substrate from the second substrate; A lifting mechanism that adjusts the relative height position of the removing member with respect to the holding member; A height detection mechanism, the detector being held at the height position of the overlapping substrate of the holding member; A horizontal detection mechanism that detects the outer periphery of the first substrate or the eccentricity of the peripheral modification layer formed inside the first substrate; A horizontal moving mechanism that moves the removal member relative to the overlapping substrate in a forward and backward direction; and The control unit controls the operation of the lifting mechanism. The control unit controls the operation of the lifting mechanism to adjust the relative height position of the removal member to the target insertion position of the removal member over the entire circumference of the overlapping substrate. When the removal component is inserted, the control unit controls the operation of the lifting mechanism so that the height position of the removal component rises and falls in accordance with the height position of each segmented area detected by the height detection mechanism. When the removal component is inserted, the control unit controls the operation of the horizontal movement mechanism to fix the horizontal position of the removal component at a depth position calculated based on the eccentricity detected by the horizontal detection mechanism.

4. A substrate processing apparatus for processing an overlapping substrate formed by bonding a first substrate and a second substrate, wherein, Inside the first substrate, there is a peripheral modification layer that serves as a base point for peeling off the peripheral portion of the first substrate, and a segmentation modification layer that serves as a base point for dividing the peripheral portion into multiple segmented regions. The substrate processing apparatus includes: A retaining member that holds the overlapping substrate; A removal member, which is inserted between the first substrate and the second substrate, at least peels the peripheral portion of the first substrate from the second substrate; A lifting mechanism that adjusts the relative height position of the removing member with respect to the holding member; A height detection mechanism, the detector being held at the height position of the overlapping substrate of the holding member; A horizontal detection mechanism that detects the outer periphery of the first substrate or the eccentricity of the peripheral modification layer formed inside the first substrate; A horizontal moving mechanism that moves the removal member relative to the overlapping substrate in a forward and backward direction; and The control unit controls the operation of the lifting mechanism. The control unit controls the operation of the lifting mechanism to adjust the relative height position of the removal member to the target insertion position of the removal member over the entire circumference of the overlapping substrate. When the removal component is inserted, the control unit controls the operation of the lifting mechanism so that the height position of the removal component rises and falls in accordance with the height position of each segmented area detected by the height detection mechanism. When the removal member is inserted, the control unit controls the operation of the horizontal movement mechanism so that the horizontal position of the removal member moves horizontally in accordance with the eccentricity detected by the horizontal detection mechanism.

5. The substrate processing apparatus according to any one of claims 1 to 4, characterized in that, The lifting mechanism adjusts the relative height of the removal component to the target insertion position by raising or lowering the removal component or the horizontal moving mechanism.

6. The substrate processing apparatus according to any one of claims 1 to 4, characterized in that, The lifting mechanism has a guide member for causing the removal member to move up and down in response to changes in the height of the overlapping substrate held by the holding member. The guiding member has a contact member that travels in contact with the upper surface of the overlapping substrate, and an arm member that connects the contact member to the removal member.

7. The substrate processing apparatus according to any one of claims 1 to 4, characterized in that, It also includes a peeling inspection mechanism that inspects the second substrate after the peripheral portion has been removed.

8. The substrate processing apparatus according to claim 5, characterized in that, It also includes a peeling inspection mechanism that inspects the second substrate after the peripheral portion has been removed.

9. A substrate processing method, which processes an overlapping substrate formed by bonding a first substrate and a second substrate, wherein... Inside the first substrate, there is a peripheral modification layer that serves as a base point for peeling off the peripheral portion of the first substrate, and a segmentation modification layer that serves as a base point for dividing the peripheral portion into multiple segmented regions. The substrate processing apparatus for processing the overlapping substrate includes: A retaining member that holds the overlapping substrate; Remove the component, which is inserted between the first substrate and the second substrate; A lifting mechanism that adjusts the relative height position of the removing member with respect to the holding member; A height detection mechanism, the detector being held at the height position of the overlapping substrate of the holding member; A horizontal detection mechanism that detects the amount of eccentricity of the peripheral modified layer formed inside the first substrate; as well as A horizontal moving mechanism that moves the removal member relative to the overlapping substrate in the forward and backward direction. The substrate processing method includes: The relative height position of the removal member to the target insertion position of the removal member is adjusted according to the circumferential position of the removal member relative to the overlapping substrate. The height position of the removal component is fixed to a height position calculated based on the height position of each segmented region detected by the height detection mechanism; The horizontal position of the removal component is fixed at a depth position calculated based on the eccentricity detected by the horizontal detection mechanism; and The removal member is inserted into the target insertion position to remove at least the peripheral portion of the first substrate.

10. A substrate processing method, which processes an overlapping substrate formed by bonding a first substrate and a second substrate, wherein... Inside the first substrate, there is a peripheral modification layer that serves as a base point for peeling off the peripheral portion of the first substrate, and a segmentation modification layer that serves as a base point for dividing the peripheral portion into multiple segmented regions. The substrate processing apparatus for processing the overlapping substrate includes: A retaining member that holds the overlapping substrate; Remove the component, which is inserted between the first substrate and the second substrate; A lifting mechanism that adjusts the relative height position of the removing member with respect to the holding member; A height detection mechanism, the detector being held at the height position of the overlapping substrate of the holding member; A horizontal detection mechanism that detects the amount of eccentricity of the peripheral modified layer formed inside the first substrate; as well as A horizontal moving mechanism that moves the removal member relative to the overlapping substrate in the forward and backward direction. The substrate processing method includes: The relative height position of the removal member to the target insertion position of the removal member is adjusted according to the circumferential position of the removal member relative to the overlapping substrate. The height position of the removal component is fixed to a height position calculated based on the height position of each segmented region detected by the height detection mechanism; The horizontal position of the removal member is moved horizontally in accordance with the eccentricity detected by the horizontal detection mechanism; and The removal member is inserted into the target insertion position to remove at least the peripheral portion of the first substrate.

11. A substrate processing method, which processes an overlapping substrate formed by bonding a first substrate and a second substrate, wherein... Inside the first substrate, there is a peripheral modification layer that serves as a base point for peeling off the peripheral portion of the first substrate, and a segmentation modification layer that serves as a base point for dividing the peripheral portion into multiple segmented regions. The substrate processing apparatus for processing the overlapping substrate includes: A retaining member that holds the overlapping substrate; Remove the component, which is inserted between the first substrate and the second substrate; A lifting mechanism that adjusts the relative height position of the removing member with respect to the holding member; A height detection mechanism, the detector being held at the height position of the overlapping substrate of the holding member; A horizontal detection mechanism that detects the amount of eccentricity of the peripheral modified layer formed inside the first substrate; as well as A horizontal moving mechanism that moves the removal member relative to the overlapping substrate in the forward and backward direction. The substrate processing method includes: The relative height position of the removal member to the target insertion position of the removal member is adjusted according to the circumferential position of the removal member relative to the overlapping substrate. The height position of the removal component is adjusted to follow the height position of each segmented region detected by the height detection mechanism. The horizontal position of the removal component is fixed at a depth position calculated based on the eccentricity detected by the horizontal detection mechanism; and The removal member is inserted into the target insertion position to remove at least the peripheral portion of the first substrate.

12. A substrate processing method, which processes an overlapping substrate formed by bonding a first substrate and a second substrate, wherein... Inside the first substrate, there is a peripheral modification layer that serves as a base point for peeling off the peripheral portion of the first substrate, and a segmentation modification layer that serves as a base point for dividing the peripheral portion into multiple segmented regions. The substrate processing apparatus for processing the overlapping substrate includes: A retaining member that holds the overlapping substrate; Remove the component, which is inserted between the first substrate and the second substrate; A lifting mechanism that adjusts the relative height position of the removing member with respect to the holding member; A height detection mechanism, the detector being held at the height position of the overlapping substrate of the holding member; A horizontal detection mechanism that detects the amount of eccentricity of the peripheral modified layer formed inside the first substrate; as well as A horizontal moving mechanism that moves the removal member relative to the overlapping substrate in the forward and backward direction. The substrate processing method includes: The relative height position of the removal member to the target insertion position of the removal member is adjusted according to the circumferential position of the removal member relative to the overlapping substrate. The height position of the removal component is adjusted to follow the height position of each segmented region detected by the height detection mechanism. The horizontal position of the removal member is moved horizontally in accordance with the eccentricity detected by the horizontal detection mechanism; and The removal member is inserted into the target insertion position to remove at least the peripheral portion of the first substrate.

13. The substrate processing method according to any one of claims 9 to 12, characterized in that, The insertion of the removal member is performed by a horizontal moving mechanism that moves the removal member relative to the overlapping substrate in the forward and backward direction. The relative height of the removal component to the target insertion position is adjusted by raising or lowering the removal component or the horizontal moving mechanism.

14. The substrate processing method according to any one of claims 9 to 12, characterized in that, It also includes: inspecting the second substrate after removing the peripheral portion. In the substrate processing method, if it is determined from the inspection results that the peripheral portion has not been properly removed, Detect the circumferential location where the peripheral portion was not properly removed, and The peripheral portion is further removed based on the detected circumferential position.

15. The substrate processing method according to claim 13, characterized in that, It also includes: inspecting the second substrate after removing the peripheral portion. In the substrate processing method, if it is determined from the inspection results that the peripheral portion has not been properly removed, Detect the circumferential location where the peripheral portion was not properly removed, and The peripheral portion is further removed based on the detected circumferential position.

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