半导体器件
By introducing a barrier layer structure into the semiconductor device, Cu, Ni and Sn materials are used to suppress the chemical reaction between the solder and the electrode, solving the problem of solder joint interface cracking caused by thermal expansion difference, and improving the reliability and stability of the device.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ROHM CO LTD
- Filing Date
- 2021-03-18
- Publication Date
- 2026-07-17
AI Technical Summary
During temperature changes, the thermal stress caused by the difference in thermal expansion between the solder and the electrode in semiconductor devices may cause cracks at the joint between the solder and the electrode, affecting the normal operation of the device.
The structure includes a semiconductor element, a conductive component, a conductive bonding component, a resin part, and a barrier layer. The barrier layer is disposed between the electrode and the conductive bonding component to suppress chemical reactions. Specific materials include Cu, Ni, and Sn. The chemical reactions are reduced through the multi-layer barrier layer structure.
It effectively suppresses cracking at the solder-electrode interface, improving the reliability and stability of semiconductor devices.
Smart Images
Figure CN115398608B_ABST