一种用于铁电存储器的缺陷表征测试方法
The SSR pulse testing method solves the problems of complexity and damage in the characterization of ferroelectric memory defects, realizes a fast and stable connection between defect states and reliability issues, and provides a new means of reliability research.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI JIAOTONG UNIV
- Filing Date
- 2022-08-31
- Publication Date
- 2026-07-17
AI Technical Summary
Existing ferroelectric memory defect characterization techniques are complex to operate, cause significant damage to devices, are difficult to implement dynamic detection, and lack direct defect-related parameters, resulting in a lack of practical significance for reliability research.
The SSR pulse testing method is adopted. The polarization behavior and voltage relationship are obtained through the basic pulse testing module. Combined with the application of electrical stress to control the degradation state of the device, the number and energy level information of defects are extracted by data processing.
It achieves rapid and stable defect characterization, directly obtains the connection between defect status and reliability issues, provides a new means of reliability research, and can dynamically evaluate the reliability of devices.
Smart Images
Figure CN115424656B_ABST