Semiconductor structure and method of manufacturing the same
By setting a multi-layer heat dissipation structure around the silicon through-hole structure within the substrate, the problem of heat accumulation in the TSV structure is solved, the heat dissipation rate and reliability of the semiconductor structure are improved, and signal coupling and leakage current are avoided.
CN115424990BActive Publication Date: 2026-07-21CHANGXIN MEMORY TECH INC
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CHANGXIN MEMORY TECH INC
- Filing Date
- 2021-06-01
- Publication Date
- 2026-07-21
AI Technical Summary
Technical Problem
Heat accumulates in the TSV structure and is difficult to dissipate effectively, leading to a decline in the chip's electrical characteristics and affecting its reliability and stability.
Method used
A first heat dissipation structure with a thermal conductivity higher than that of the substrate is arranged around the silicon through-hole structure, and a second heat dissipation structure is arranged on its upper surface to form a multi-layer heat dissipation structure to improve heat dissipation efficiency.
Benefits of technology
It effectively reduces the temperature of the silicon through-hole structure, improves the heat dissipation rate of the semiconductor structure, enhances reliability and stability, and avoids signal coupling and leakage current problems.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN115424990B_ABST
Abstract
The application provides a semiconductor structure and a preparation method thereof. The semiconductor structure comprises a substrate, the substrate comprises a substrate and a first heat dissipation structure in the substrate, the thermal conductivity of the first heat dissipation structure is greater than that of the substrate, the substrate has opposite upper and lower surfaces, and the upper surface of the substrate exposes the surface of the first heat dissipation structure; a second heat dissipation structure is located at least on the upper surface of the first heat dissipation structure; a silicon through hole structure penetrates through the whole thickness of the second heat dissipation structure and extends into the substrate, the second heat dissipation structure surrounds the silicon through hole structure, and the first heat dissipation structure surrounds the silicon through hole structure. According to the application, the heat dissipation rate of the semiconductor structure can be improved.
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