A kind of antimony selenide thin film solar cell containing composite absorption layer

Abstract

The application discloses a kind of antimony selenide thin-film solar cells containing composite absorption layer, specifically, the composite absorption layer antimony selenide solar cell containing Sb2 (S 1‑x Se x )3 / Sb2Se3 structure, the battery structure from top to bottom mainly includes: glass substrate, transparent conductive oxide front electrode layer, n-type window layer, p-type Sb2 (S 1‑x Se x )3 semiconductor layer, p-type Sb2Se3 semiconductor layer and back electrode layer are deposited in glass substrate in sequence;Solve the problem that the open-circuit voltage of current single absorption layer antimony selenide solar cell is low, which leads to the low performance of antimony selenide solar cell;The composite absorption layer of the application is set to expand the solar spectrum absorption range, and the process complexity of gradient doping is avoided.

Description

Technical Field

[0001] This invention belongs to the field of solar cell technology, specifically relating to an antimony selenide thin-film solar cell containing a composite absorption layer. Background Technology

[0002] Sb₂Se₃ is a stable binary compound with a single phase. The raw materials are inexpensive, have low toxicity, and a high light absorption coefficient (>10). 5 cm -1 With its low crystallization temperature (~130℃), single phase, and suitable bandgap width (1.1eV~1.35eV), a 400nm thick Sb₂Se₃ layer can almost completely absorb visible light. Currently, the photoelectric conversion efficiency of Sb₂Se₃ solar cells has reached 10.12% internationally.

[0003] Sb2(S 1-x Se x )3 is a semiconductor material whose bandgap can be modulated between 1.1 and 1.7 eV by adjusting the S or Se content, and it has a large light absorption coefficient (≈10). 5 cm -1 The preparation method is simple and has good stability. Currently, Sb2(S) 1-x Se x The photoelectric conversion efficiency of solar cells has reached 10.7%.

[0004] To maximize the effective use of solar energy and improve the conversion efficiency of solar cells, materials with the best matching solar spectral energy width and bandgap are typically used to make the cells. The bandgap is stacked from the outside to the inside in order of decreasing width, so that high-energy light is absorbed by the outer wide-bandgap material, while low-energy light can pass through and be absorbed by the narrower bandgap material. This makes it possible to absorb solar energy to the maximum extent. Solar cells with this composite structure are called composite absorption layer solar cells.

[0005] As is well known, photons with energy exceeding the band gap can excite electron-hole pairs in semiconductor materials. However, semiconductor materials have narrow band gaps, so when a photon with too high energy excites an electron-hole pair, the excess energy is consumed as heat, preventing the maximum utilization of solar energy. Therefore, in Sb2(S 1-x Se x In the composite absorber layer with a )3 / Sb2Se3 structure, Sb2(S) has a wider band gap. 1-x Se x The material first absorbs high-energy photons, which leads to high on-state output and reduces heat dissipation. The narrow bandgap of Sb2Se3 can extend the solar cell's response to longer wavelengths and improve short-circuit current output. Summary of the Invention

[0006] To address the aforementioned technical problems, this invention provides a thin-film solar cell containing a composite absorber layer, specifically a Sb2(S) thin-film solar cell. 1-x Se x The antimony selenide solar cell with a composite absorber layer of 3 / Sb2Se3 mainly solves the problem of low open-circuit voltage in antimony selenide solar cells with a single absorber layer, which leads to low performance of antimony selenide solar cells.

[0007] To achieve the above-mentioned technical objectives, the present invention is implemented through the following technical solution:

[0008] A type containing Sb2(S 1-x Se x A composite absorber layer antimony selenide solar cell with a Sb2Se3 / Sb2Se3 structure, including a glass substrate;

[0009] The lower surface of the glass substrate is deposited from top to bottom with the following layers: a transparent conductive oxide front electrode layer, an n-type window layer, and a p-type Sb2(Sb2) ... 1-x Se x )3 semiconductor layer, p-type Sb2Se3 semiconductor layer, back electrode layer;

[0010] Preferably, the transparent conductive oxide front electrode layer material is any one of ITO (In2O3:Sn), FTO (SnO2:F), and AZO (ZnO:Al);

[0011] Preferably, the n-type window layer is any one of CdS, CdSe, and ZnSe;

[0012] Preferably, the back electrode layer is made of one of the following metal thin films: Au, Pt, Ag, Ni, Cu, and Mo.

[0013] Preferably, the p-type Sb2(S 1-x Se x )3 The semiconductor layer is a multi-bandgap composite multilayer film;

[0014] Preferably, a buffer layer is provided between the front electrode layer and the n-type window layer;

[0015] Preferably, the buffer layer is prepared from one or more of ZnO:Mg, ZnO, and TiO2 semiconductor materials;

[0016] Preferably, a back contact layer is provided between the p-type Sb2Se3 semiconductor layer and the back electrode layer;

[0017] Preferably, the back contact layer is prepared from one or more of ZnTe:Cu, Spiro-OMeTAD, and P3HT.

[0018] The beneficial effects of this invention are:

[0019] This structure is the first to propose a method based on Sb2(S 1-x Se x The composite absorption layer composed of Sb2Se3 and Sb2Se3 not only expands the absorption range of the solar spectrum, but also avoids the process complexity of gradient doping and has a simple structure. Attached Figure Description

[0020] Figure 1 The present invention provides a product containing Sb2(S) 1-x Se x A schematic diagram of a 3 / Sb2Se3 composite absorber layer antimony selenide solar cell. Detailed Implementation

[0021] The technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0022] Example 1

[0023] In this embodiment, the antimony selenide solar cell with a composite absorption layer has the following structure from top to bottom along the illumination direction: glass substrate, FTO transparent front electrode, n-type CdS window layer, and p-type Sb2(S)2. 1-x Se x )3 semiconductor layer, p-type Sb2Se3 semiconductor layer and back electrode Au.

[0024] 1) Cleaning the FTO glass substrate

[0025] Commercially available FTO glass was used as the substrate, with a visible light transmittance >77% and a sheet resistance <10Ω / sq. The FTO glass was first immersed in detergent, acetone, isopropanol and ethanol and ultrasonically cleaned in sequence for about 30 minutes each. Then it was rinsed with plenty of deionized water and finally dried with nitrogen gas for later use.

[0026] 2) Deposition of n-type CdS window layer

[0027] n-type CdS was deposited using magnetron sputtering: The cleaned FTO glass was fixed on a sample holder and placed in a vacuum chamber, where the vacuum level reached 5 × 10⁻⁶. -4 After Pa, using a CdS target with a purity of 4N, Ar was passed through the target and sputtered at a pressure of 0.1–10 Pa to obtain a CdS window layer with a thickness of 40 nm–100 nm on an FTO glass substrate.

[0028] 3) Deposition of p-type Sb2(S 1-xSe x 3 Semiconductor layer

[0029] p-type Sb2(S) was deposited using near-space sublimation technology. 1-x Se x 3. Semiconductor Layer: A mixture of Sb₂Se₃ and Sb₂S₃ powders with a purity of 5N is placed in a graphite boat. The molar ratio of Se to S in the mixture is 9:1 to 7:3. FTO / CdS is then placed on pads with a height of 3mm to 10mm at both ends of the graphite boat. A top graphite substrate is then placed on top of the FTO / CdS substrate and placed in a vacuum chamber. With a vacuum level <0.5Pa, the source temperature is controlled at 450℃ to 480℃ and the substrate temperature at 350℃ to 380℃ to deposit a p-type Sb₂(S₂) layer with a thickness of 50nm to 300nm on the FTO / CdS substrate. 1-x Se x 3 Semiconductor layer.

[0030] 4) Deposition of p-type Sb2Se3 semiconductor layer

[0031] A p-type Sb₂Se₃ semiconductor layer was deposited using a near-space sublimation technique: 5N Sb₂Se₃ powder was placed in a graphite boat, and then the aforementioned FTO / CdS / Sb₂(S)₂ was deposited. 1-x Se x )3. The semiconductor layer is placed on pads with a height of 3mm to 10mm at both ends of the graphite boat, followed by FTO / CdS / Sb2(S 1-x Se x )3. A top graphite substrate is placed on top of the semiconductor layer and placed in a vacuum chamber. After the chamber vacuum degree is <0.5Pa, the source temperature is controlled at 480℃~510℃ and the substrate temperature at 350℃~380℃, in the FTO / CdS / Sb2(S 1-x Se x A p-type Sb2Se3 semiconductor layer with a thickness of 100nm to 400nm is deposited on the semiconductor layer.

[0032] 5) Deposit back electrode Au

[0033] Au back electrode deposition using thermal evaporation technology: The above FTO / CdS / Sb2(S 1-x Se x The Sb2Se3 sample was fixed on the sample holder and placed in the vacuum chamber, where the vacuum reached 5 × 10⁻⁶. -4 After Pa, resistance heating of Au wire with a purity of 4N was initiated for thermal evaporation, and finally, FTO / CdS / Sb2(S) was obtained. 1-x Se xA back electrode Au with a thickness of 80 nm to 120 nm was fabricated on a )3 / Sb2Se3 sample, thereby producing a thin-film solar cell containing a composite absorption layer of antimony selenide.

[0034] Example 2

[0035] Based on the structure of Example 1, a buffer layer is provided between the front electrode layer and the n-type window layer; the buffer layer is prepared by ZnO:Mg, ZnO, TiO2 composite.

[0036] Example 3

[0037] Based on the structure of Example 1, a back contact layer is provided between the p-type Sb2Se3 semiconductor layer and the back electrode layer; the back contact layer is prepared by composite of ZnTe:Cu, Spiro-OMeTAD, and P3HT.

[0038] In the description of this specification, references to terms such as "an embodiment," "example," "specific example," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0039] The preferred embodiments of the present invention disclosed above are merely illustrative of the invention. These preferred embodiments do not exhaustively describe all details, nor do they limit the invention to the specific implementations described. Clearly, many modifications and variations can be made based on the content of this specification. This specification selects and specifically describes these embodiments to better explain the principles and practical applications of the invention, thereby enabling those skilled in the art to better understand and utilize the invention. The invention is limited only by the claims and their full scope and equivalents.

Claims

1. A substance containing Sb2(S) 1-x Se x A Sb2Se3 / Sb2Se3 composite absorber layer antimony selenide solar cell, comprising a glass substrate, is characterized in that... The lower surface of the glass substrate is deposited from top to bottom with the following layers: a transparent conductive oxide front electrode layer, an n-type window layer, and a p-type Sb2(Sb2) ... 1-x Se x )3 semiconductor layer, p-type Sb2Se3 semiconductor layer, back electrode layer; The transparent conductive oxide front electrode layer material is any one of ITO (In2O3:Sn), FTO (SnO2:F), and AZO (ZnO:Al); The n-type window layer is any one of CdS, CdSe, and ZnSe; The back electrode layer is any one of Au, Pt, Ag, Ni, Cu, and Mo metal thin films; the p-type Sb2(S 1-x Se x )3 The semiconductor layer is a multilayer film with multiple band gaps.

2. The Sb2(S)-containing compound according to claim 1 1-x Se x Antimony selenide solar cells with a composite absorber layer of Sb2Se3 / Sb2Se3 structure are characterized by, A buffer layer is provided between the front electrode layer and the n-type window layer.

3. The Sb2(S)-containing compound according to claim 2 1-x Se x Antimony selenide solar cells with a composite absorber layer of Sb2Se3 / Sb2Se3 structure are characterized by, The buffer layer is prepared from one or more of the semiconductor materials ZnO:Mg, ZnO, and TiO2.

4. The Sb2(S)-containing compound according to claim 1 1-x Se x Antimony selenide solar cells with a composite absorber layer of Sb2Se3 / Sb2Se3 structure are characterized by, A back contact layer is provided between the p-type Sb2Se3 semiconductor layer and the back electrode layer.

5. The Sb2(S)-containing compound according to claim 4 1-x Se x Antimony selenide solar cells with a composite absorber layer of Sb2Se3 / Sb2Se3 structure are characterized by, The back contact layer is prepared from one or more of ZnTe:Cu, Spiro-OMeTAD, and P3HT.

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