An LED device and a method of manufacturing the same
By employing eutectic bonding between the LED chip and the phosphor, the use of silicone is reduced. By utilizing the thermal conductivity of the eutectic layer, the problems of phosphor waste and high thermal resistance of the silicone adhesive layer in the prior art are solved, thus realizing LED devices with high power density and reliability.
CN115440875BActive Publication Date: 2025-11-11NINGBO SUNPU OPTO SEMICON
Patent Information
- Application Number
- CN202211164374.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-09-23
- Publication Date
- 2025-11-11
- Estimated Expiration
- 2042-09-23
Smart Images
Figure CN115440875B_ABST
Abstract
This invention discloses an LED device and its fabrication method, applicable to the field of LED technology. The device includes: a substrate; an LED chip located on one surface of the substrate; an LED chip electrically connected to the substrate; a phosphor located on the surface of the LED chip facing away from the substrate; and the phosphor and LED chip eutecticly connected via a first eutectic layer. By electrically connecting the LED chip to the substrate and fixing the phosphor to the surface of the LED chip via the first eutectic layer, the use of silicone organic materials in the LED device can be reduced. Simultaneously, the eutectic layer has good thermal conductivity, thereby enabling the LED device to have higher power density and reliability.
Need to check novelty before this filing date? Find Prior Art
Citation Information
Patent Citations
Separate cover plate inverted LED white-light luminous apparatus
CN106298755A
Super-power white light LED light source module and packaging method
CN114530440A
LED device and LED equipment
CN218385264U