半导体装置
By setting multiple low-concentration hydrogen peaks and high-concentration hydrogen peaks within the buffer zone of the semiconductor substrate to form a flat region, the doping concentration distribution is optimized, solving the problem of doping concentration control within the buffer zone and improving the performance and reliability of the semiconductor device.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- FUJI ELECTRIC CO LTD
- Filing Date
- 2021-11-15
- Publication Date
- 2026-07-17
AI Technical Summary
In semiconductor devices, it is difficult to effectively control the distribution shape of doping concentration within the buffer zone, which affects device performance.
A buffer zone is set on the lower surface of the semiconductor substrate, and multiple low-concentration hydrogen peaks and high-concentration hydrogen peaks are set inside it. By adjusting the doping concentration distribution, a flat region is formed to ensure that the doping concentration changes smoothly and is controlled within a certain range. The doping concentration gradient is optimized by combining the distribution of chemical concentration.
This achieves a uniform distribution of doping concentration within the buffer zone, improves the performance and reliability of semiconductor devices, reduces electric field concentration, and enhances the effect of the field cutoff layer.
Smart Images
Figure CN115443541B_ABST