Magnetic element, method of manufacturing the same, and carrier plate

Abstract

The application provides a magnetic element, a manufacturing method thereof and a carrier plate. The magnetic element comprises: a first wiring area comprising a first conductive layer and a second conductive layer, both arranged along a first direction; a second wiring area comprising a third conductive layer and a fourth conductive layer, both arranged along a second direction perpendicular to the first direction, and the third conductive layer and the fourth conductive layer are respectively located on opposite sides of the second wiring area; a receiving space located between the third conductive layer and the fourth conductive layer, the first conductive layer is arranged close to the receiving space, and the second conductive layer is located on a side of the first conductive layer away from the receiving space; and a magnetic column arranged in the receiving space; wherein the third conductive layer has a first wiring part, one end of the first wiring part of the third conductive layer is directly connected to the first conductive layer to form part of a winding of the magnetic element. The application can reduce the width size of the magnetic element, effectively improve the power density of the power module, and improve the conversion efficiency of the power module.

Description

Technical Field

[0001] This invention relates to a magnetic element, its manufacturing method, and a carrier plate. Background Technology

[0002] As people's demands for smart living increase, society's need for data processing is growing rapidly. Global energy consumption for data processing averages hundreds of billions or even trillions of kilowatt-hours annually; and a single large data center can occupy tens of thousands of square meters. Therefore, high efficiency and high power density are key indicators for the healthy development of this industry.

[0003] The key unit in a data center is the server, whose motherboard typically consists of a Central Processing Unit (CPU), chipsets, memory, and other data processing chips, along with their power supplies and necessary peripheral components. The increased processing power per unit volume of a server means an increase in the number and integration of these chips, leading to a significant increase in space usage and power consumption. Therefore, the power supply that powers these chips (also called the motherboard power supply because it shares the same motherboard with the data processing chips) is expected to have higher efficiency, higher power density, and a smaller size to support the energy-saving and footprint reduction requirements of the entire server and even the entire data center. To meet the demand for high power density, the switching frequency of power supplies is also increasing; the switching frequency of low-voltage, high-current power supplies in the industry is generally above 1 megahertz (MHz).

[0004] For transformers used in low-voltage, high-current applications, achieving higher power density and higher conversion efficiency remains a challenge.

[0005] Figure 1A This is a cross-sectional view of a magnetic element along its thickness direction in the prior art. Figure 1B It is along Figure 1A A top view along the midsection line A1-A1'. The magnetic element 100' includes a magnetic core 200', a first winding 101', a second winding 102', and a third winding 103'. A first insulating layer 104', a second insulating layer 105', and a third insulating layer 106' are sequentially disposed between the magnetic core 200' and the first winding 101', and between these windings. These windings 101' to 103' and these insulating layers 104' to 106' of the magnetic element 200' are integrally formed by a carrier plate 300'.

[0006] Combination Figure 1A and Figure 1BIt can be seen that the vertical connection portions 101-1' and 102-1' of the first winding 101' and the second winding 102' located on the left and right sides of the magnetic core 200' are achieved through connection holes 101-2' and 102-2' (e.g., through holes), respectively. The vertical connection portion 103-1' of the third winding 103' is achieved through sidewall copper. The widths of the connection holes 101-2' and 102-2' corresponding to the first winding 101' and the second winding 102' are D1 and D2, respectively. For this hole structure, only the copper portion actually serves as the current-carrying element; the copper portion is hollow, and its internal dimensions are not utilized efficiently. (Continue to refer to...) Figure 1B A certain distance needs to be maintained between the connecting holes 101-2' and 102-2' to meet the requirements of mechanical drilling. Therefore, the connecting hole structure further restricts the flow capacity.

[0007] Continue to refer to Figure 1A The carrier board 300' can be fabricated using PCB technology. The width of the first insulating layer 104' is G1, the width of the second insulating layer 105' is G2, and the width of the third insulating layer 106' is G3. During the board fabrication process, the three winding layers 101' to 103' are processed sequentially. This requires maintaining a certain distance when fabricating the connection hole structure of the vertical portion of each winding layer to meet process and reliability requirements. Industry standards generally require this distance to be at least 0.4mm. With a fixed core width, the above process increases the size of the magnetic components. Given the increasingly higher power density requirements of systems, this structure inevitably leads to wasted space. Therefore, further optimization of the winding structure is needed to achieve a smaller footprint, thereby increasing the power density of the module and meeting the urgent market demands. Summary of the Invention

[0008] The purpose of this invention is to provide a magnetic element, its manufacturing method, and a carrier plate, which can solve one or more defects of the prior art.

[0009] To achieve the above objectives, according to an embodiment of the present invention, a magnetic element is provided, comprising: a first wiring region including a first conductive layer and a second conductive layer, both disposed along a first direction; a second wiring region including a third conductive layer and a fourth conductive layer, both disposed along a second direction perpendicular to the first direction, the third conductive layer and the fourth conductive layer being located on opposite sides of the second wiring region; an accommodating space located between the third conductive layer and the fourth conductive layer, the first conductive layer and the third conductive layer being disposed close to the accommodating space, and the second conductive layer being located on the side of the first conductive layer away from the accommodating space; and a magnetic post disposed within the accommodating space; wherein the third conductive layer has a first trace portion, one end of the first trace portion of the third conductive layer being directly connected to the first conductive layer to form a partial winding of the magnetic element.

[0010] In one embodiment of the present invention, the third conductive layer further has a second trace portion located at one end of the first trace portion of the third conductive layer and spaced apart from the first trace portion of the third conductive layer; wherein the second trace portion of the third conductive layer is directly connected to the second conductive layer to form a portion of the winding of the magnetic element.

[0011] In one embodiment of the present invention, the fourth conductive layer has a first trace portion, one end of which is directly connected to the first conductive layer to form a portion of the winding of the magnetic element.

[0012] In one embodiment of the present invention, the fourth conductive layer further has a second trace portion located at one end of the first trace portion of the fourth conductive layer and spaced apart from the first trace portion of the fourth conductive layer; wherein the second trace portion of the fourth conductive layer is directly connected to the second conductive layer to form a portion of the winding of the magnetic element.

[0013] In one embodiment of the present invention, the second wiring region further includes at least one fifth conductive layer located on the side of the fourth conductive layer away from the third conductive layer, and one of the at least one fifth conductive layer is connected to the fourth conductive layer through a blind via to form a portion of the winding of the magnetic element.

[0014] In one embodiment of the present invention, the fourth conductive layer has a first trace portion, one end of which is connected to the first conductive layer through a blind via to form a portion of the winding of the magnetic element.

[0015] In one embodiment of the present invention, the fourth conductive layer further has a second trace portion located at one end of the first trace portion of the fourth conductive layer and spaced apart from the first trace portion of the fourth conductive layer; wherein the second trace portion of the fourth conductive layer is connected to the second conductive layer through a blind via to form a portion of the winding of the magnetic element.

[0016] In one embodiment of the present invention, the second wiring region further includes at least one sixth conductive layer located on the side of the third conductive layer away from the fourth conductive layer, and one of the at least one sixth conductive layer is connected to the second conductive layer through a blind via to form a portion of the winding of the magnetic element.

[0017] In one embodiment of the present invention, the at least one fifth conductive layer includes an inner fifth conductive layer and at least one outer fifth conductive layer, wherein the at least one outer fifth conductive layer is located on the side of the inner fifth conductive layer away from the fourth conductive layer; wherein the inner fifth conductive layer is connected to the fourth conductive layer through a blind via to form a portion of the winding of the magnetic element.

[0018] In one embodiment of the present invention, one of the at least one outer fifth conductive layer is connected to the second conductive layer through a blind via to form a portion of the winding of the magnetic element.

[0019] In one embodiment of the present invention, the second wiring region further includes at least one fifth conductive layer located on the side of the fourth conductive layer away from the third conductive layer, and one of the at least one fifth conductive layer is connected to the second conductive layer through a blind via to form a portion of the winding of the magnetic element.

[0020] In one embodiment of the present invention, the magnetic element includes two first wiring regions, and each end of the first trace portion of the third conductive layer is directly connected to a layer of the first conductive layer to form a partial winding of the magnetic element.

[0021] In one embodiment of the present invention, the third conductive layer further has two second trace portions, which are respectively located at both ends of the first trace portion of the third conductive layer and are spaced apart from the first trace portion of the third conductive layer; and each of the second trace portions of the third conductive layer is directly connected to a second conductive layer to form a partial winding of the magnetic element.

[0022] In one embodiment of the present invention, an inner wall conductive layer is laid on the inner wall of the accommodating space near the first conductive layer and the third conductive layer to form a portion of the winding of the magnetic element.

[0023] In one embodiment of the present invention, the second wiring region further includes a seventh conductive layer and an eighth conductive layer, both of which are located between the fourth conductive layer and the magnetic post. The eighth conductive layer is located on the side of the seventh conductive layer away from the magnetic post. The seventh conductive layer is connected to the eighth conductive layer through a blind via and is directly connected to the inner wall conductive layer to form a portion of the winding of the magnetic element.

[0024] In one embodiment of the present invention, the magnetic element includes two first wiring regions, one second wiring region, two spaced-apart accommodating spaces, two magnetic pillars, and a third wiring region. The two accommodating spaces are located between the two first wiring regions, and the third wiring region is located between the two accommodating spaces. Each accommodating space contains one magnetic pillar. The third wiring region includes two ninth conductive layers, both disposed along the first direction and located on opposite sides of the third wiring region. Each third conductive layer has two first trace portions, each disposed near one of the accommodating spaces. The first conductive layers and the ninth conductive layers disposed opposite each other on both sides of each magnetic pillar directly contact the first and second ends of the first trace portions of the third conductive layer near the magnetic pillar, respectively, to form a partial winding of the magnetic element.

[0025] In one embodiment of the present invention, the third wiring region further includes a through hole located between the two ninth conductive layers; the winding of the magnetic element includes multiple sub-windings, which are wound sequentially from the inside to the outside along the circumference of each magnetic post, wherein the two outermost sub-windings are located at the outermost edges away from the two magnetic posts; the sidewall of the through hole is used to form a common winding portion of the two outermost sub-windings.

[0026] In one embodiment of the present invention, the third wiring area further includes two tenth conductive layers and one eleventh conductive layer disposed at intervals, both disposed along a first direction, wherein the two tenth conductive layers are located between the two ninth conductive layers, and the eleventh conductive layer is located between the two tenth conductive layers.

[0027] In one embodiment of the present invention, the third conductive layer further has two second trace portions, which are respectively spaced apart from the first ends of each of the first trace portions of the third conductive layer, and each of the second trace portions of the third conductive layer is directly connected to a second conductive layer to form a partial winding of the magnetic element.

[0028] In one embodiment of the present invention, the third conductive layer further has two third trace portions, which are respectively spaced apart from the second end of each of the first trace portions of the third conductive layer, and each of the third trace portions of the third conductive layer is directly connected to a tenth conductive layer to form a partial winding of the magnetic element.

[0029] In one embodiment of the present invention, the third conductive layer further has a fourth trace portion located between the two third trace portions of the third conductive layer and spaced apart from the third trace portions of the third conductive layer. The fourth trace portion of the third conductive layer is directly connected to the eleventh conductive layer to form a portion of the winding of the magnetic element.

[0030] In one embodiment of the present invention, the winding of the magnetic element includes multiple sub-windings, which are wound sequentially from the inside to the outside along the circumference of each magnetic post, wherein the two outermost sub-windings are located at the outermost edges away from the two magnetic posts; the eleventh conductive layer is used to form a common winding portion of the two outermost sub-windings.

[0031] In one embodiment of the present invention, the winding of the magnetic element located on the outermost part of the magnetic element is prepared by a plate-edge metallization process.

[0032] In one embodiment of the present invention, the winding of the magnetic element includes multiple sub-windings, with at least three layers of the sub-windings wound sequentially from the inside to the outside along the circumference of each magnetic post, wherein one of the two sub-windings closest to each magnetic post is used to form the primary side sub-winding of the magnetic element.

[0033] In one embodiment of the present invention, the magnetic element further includes a first subcarrier plate, the first subcarrier plate being used to form the first wiring area.

[0034] In one embodiment of the present invention, the magnetic element further includes a second subcarrier plate, the second subcarrier plate being used to form the third wiring region.

[0035] To achieve the above objectives, the present invention further provides a method for manufacturing a magnetic element, the magnetic element comprising a first component, a first subcarrier plate, and a magnetic post, the method comprising the following steps:

[0036] Step S1: A first receiving groove is formed on the first component. The first receiving groove is used to accommodate the first subcarrier board to form a first wiring area. The first wiring area includes a first conductive layer and a second conductive layer.

[0037] Step S2: A first dielectric layer is formed on the upper surface of the first component, and a second dielectric layer is formed on the lower surface of the first component. The first dielectric layer, the second dielectric layer, and the first component form a second component.

[0038] Step S3: Expose the lower end faces of the first conductive layer and the second conductive layer;

[0039] Step S4: A third conductive layer is formed on the lower surface of the second component. One end of the first trace portion of the third conductive layer is directly connected to the first conductive layer to form a partial winding of the magnetic element.

[0040] In another embodiment of the present invention, in step S3, the lower surface of the second component is brushed to expose the lower end faces of the first conductive layer and the second conductive layer.

[0041] In another embodiment of the present invention, step S4 further includes:

[0042] A first blind via is formed on the second component, and the first blind via is connected to the first conductive layer;

[0043] A fourth conductive layer is formed on the upper surface of the second component, and one end of the first trace portion of the fourth conductive layer is connected to the first conductive layer through the first blind hole to form a portion of the winding of the magnetic element.

[0044] In another embodiment of the present invention, step S4 further includes: disconnecting the third conductive layer to form a second trace portion of the third conductive layer, wherein the second trace portion of the third conductive layer is directly connected to the second conductive layer to form a partial winding of the magnetic element.

[0045] In another embodiment of the present invention, step S3 further includes:

[0046] Exposing the upper surface of the first conductive layer and the upper surface of the second conductive layer; and

[0047] Step S4 also includes:

[0048] A fourth conductive layer is formed on the upper surface of the second component, and the fourth conductive layer is disconnected to form a first trace portion and a second trace portion of the fourth conductive layer;

[0049] Wherein, one end of the first trace portion of the fourth conductive layer is directly connected to the first conductive layer; and

[0050] The second trace portion of the fourth conductive layer is directly connected to the second conductive layer to form a portion of the winding of the magnetic element.

[0051] In another embodiment of the present invention, after step S4, the method for manufacturing the magnetic element further includes the following steps:

[0052] Step S5: A third dielectric layer is formed on the lower surface of the third conductive layer, and a fourth dielectric layer is formed on the upper surface of the fourth conductive layer. The third dielectric layer, the fourth dielectric layer, and the second component are integrated and defined as the third component.

[0053] Step S6: Form second blind vias in the third dielectric layer and the fourth dielectric layer respectively. The second blind via in the third dielectric layer is connected to the second trace portion of the third conductive layer, and the second blind via in the fourth dielectric layer is connected to the second trace portion of the fourth conductive layer.

[0054] Step S7: An inner fifth conductive layer is formed on the upper surface of the third component and an inner sixth conductive layer is formed on the lower surface of the third component. The inner fifth conductive layer is connected to the second trace portion of the fourth conductive layer through the second blind via in the fourth dielectric layer. The inner sixth conductive layer is connected to the second trace portion of the third conductive layer through the second blind via in the third dielectric layer.

[0055] Step S8: Form the portion of the winding of the magnetic element located outside the magnetic element.

[0056] In another embodiment of the present invention, before step S1, the method for manufacturing the magnetic element further includes the following steps:

[0057] Step S01: Provide a core board, form a second receiving groove on the core board, and install the magnetic column in the second receiving groove;

[0058] Step S02: An upper dielectric layer is formed on the upper surface of the core board, and a lower dielectric layer is formed on the lower surface of the core board. The upper dielectric layer and the lower dielectric layer together with the core board form the first component.

[0059] In another embodiment of the present invention, in step S01, the outer surface of the magnetic post has a coating.

[0060] In another embodiment of the present invention, before step S1, the method for manufacturing the magnetic element further includes the following steps:

[0061] Step S01: Provide a core board, form a second receiving groove on the core board, and install a gasket in the second receiving groove;

[0062] Step S02: An upper dielectric layer is formed on the upper surface of the core board, and a lower dielectric layer is formed on the lower surface of the core board, wherein the upper dielectric layer and the lower dielectric layer together with the core board form the first assembly; and

[0063] After step S8, the method for manufacturing the magnetic element further includes the following steps:

[0064] Step S9: Remove the gasket from the second receiving groove to form a receiving space;

[0065] Step S10: Install the magnetic column within the accommodating space.

[0066] In another embodiment of the present invention, the first component is a core board;

[0067] Two first receiving slots are formed on both sides of the first component, and two first subcarrier boards are respectively disposed in the two first receiving slots to form two first wiring areas.

[0068] Wherein, both ends of the first trace portion of the third conductive layer are directly connected to the first conductive layer.

[0069] The third conductive layer also has two second trace portions, which are spaced apart at both ends of the first trace portion of the third conductive layer, and each second trace portion of the third conductive layer is directly connected to a second conductive layer.

[0070] Both ends of the first trace portion of the fourth conductive layer are directly connected to a first conductive layer; and

[0071] The fourth conductive layer also has two second trace portions, which are spaced apart at both ends of the first trace portion of the fourth conductive layer. Each second trace portion of the fourth conductive layer is directly connected to a second conductive layer to form a partial winding of the magnetic element.

[0072] In another embodiment of the present invention, after step S4, the method for manufacturing the magnetic element further includes the following steps:

[0073] Step S5: Form a second receiving groove in the middle of the second component;

[0074] Step S6: Provide a cover plate and place it above the second component. The lower surface of the cover plate and the second receiving groove form a receiving space.

[0075] Step S7: Form two first blind holes and two second blind holes on the cover plate. Each first blind hole on the cover plate is connected to a first trace portion of the fourth conductive layer, and each second blind hole on the cover plate is connected to a second trace portion of the fourth conductive layer.

[0076] Step S8: Form an inner fifth conductive layer on the upper surface of the cover plate, and disconnect the inner fifth conductive layer so that the inner fifth conductive layer has a first trace portion and two second trace portions;

[0077] Wherein, each end of the first trace portion of the inner fifth conductive layer is connected to a first trace portion of the fourth conductive layer through a first blind via; and

[0078] Each of the second trace portions of the inner fifth conductive layer is connected to a second trace portion of the fourth conductive layer through a second blind via, in order to form a partial winding of the magnetic element.

[0079] In another embodiment of the present invention, after step S8, the method for manufacturing the magnetic element further includes the following steps:

[0080] Step S9: A third dielectric layer is formed on the lower surface of the third conductive layer, and a fourth dielectric layer is formed on the upper surface of the inner fifth conductive layer. The third dielectric layer, the fourth dielectric layer, the cover plate, and the second component are integrated and defined as the third component.

[0081] Step S10: Form two third blind vias on the third dielectric layer and two fourth blind vias on the fourth dielectric layer. Each third blind via is connected to a second trace portion of the third conductive layer, and each fourth blind via is connected to a second trace portion of the inner fifth conductive layer.

[0082] Step S11: An inner sixth conductive layer is formed on the lower surface of the third dielectric layer and an outer fifth conductive layer is formed on the upper surface of the fourth dielectric layer;

[0083] Wherein, each end of the inner sixth conductive layer is connected to a second trace portion of the third conductive layer through a third blind hole, and each end of the outer fifth conductive layer is connected to a second trace portion of the inner fifth conductive layer through a fourth blind hole;

[0084] Step S12: Form the portion of the winding of the magnetic element located on the outside of the magnetic element;

[0085] Step S13: Install the magnetic column within the accommodating space.

[0086] In another embodiment of the invention, the portion of the magnetic element other than the first subcarrier plate forms a second wiring region.

[0087] In another embodiment of the present invention, the magnetic element further includes a second subcarrier plate, and the number of the first subcarrier plates is two, the number of the first receiving slots is two, the number of the first wiring areas is two, the number of the magnetic pillars is two, the two magnetic pillars that are spaced apart are both located between the two first wiring areas, and the second subcarrier plate is located between the two magnetic pillars.

[0088] Step S1 also includes the following steps:

[0089] A third receiving groove is formed on the first component, the third receiving groove being used to receive the second sub-carrier board to form a third wiring area, wherein the third wiring area includes two ninth conductive layers located on both sides of the third wiring area, and each magnetic pillar is located between one of the ninth conductive layers and one of the first conductive layers;

[0090] Step S3 also includes the following steps:

[0091] Exposing the lower end face of the ninth conductive layer; and

[0092] Step S4 also includes the following steps:

[0093] The third conductive layer is disconnected to form two first trace portions of the third conductive layer. One end of each first trace portion of the third conductive layer is directly connected to a first conductive layer, and the other end is directly connected to a ninth conductive layer.

[0094] To achieve the above objectives, the present invention provides a carrier board, the carrier board comprising: a first wiring region including a first conductive layer and a second conductive layer, both disposed along a first direction; and a second wiring region including a third conductive layer and a fourth conductive layer, both disposed along a second direction perpendicular to the first direction, wherein the third conductive layer and the fourth conductive layer are respectively located on opposite sides of the second wiring region; wherein the third conductive layer has a first trace portion, one end of the first trace portion of the third conductive layer being directly connected to the first conductive layer.

[0095] This invention, by employing a metal wiring layer structure, enables more efficient space utilization, further enhances the current-carrying capacity of magnetic components, and significantly reduces the width of the magnetic components. For example, this invention can achieve a current carrying capacity of 2 oz by setting the first conductive layer of the first wiring region to a relatively small width (approximately 0.07 mm), while existing technologies require setting the diameter of the connecting hole to 0.4 mm to electroplate a copper thickness of 2 oz within the connecting hole to achieve a current carrying capacity of 2 oz. This reduction in the size of the magnetic component allows for an increase in power density. By maintaining the width of the magnetic component and assigning the reduced size to the magnetic post, the cross-sectional area of ​​the magnetic core can be effectively increased, thereby reducing magnetic losses.

[0096] This invention can effectively improve the power density of the power module, thus achieving a smaller footprint, and improve the conversion efficiency of the power module, thus achieving lower power loss.

[0097] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention. Attached Figure Description

[0098] The above and other features and advantages of the present invention will become more apparent from a detailed description of exemplary embodiments thereof with reference to the accompanying drawings.

[0099] Figure 1A This is a cross-sectional view of a magnetic element along its thickness direction in the prior art;

[0100] Figure 1B It is along Figure 1A Top view along the middle section line A1-A1';

[0101] Figure 2A This is a cross-sectional view of the magnetic element along the thickness direction according to the first preferred embodiment of the present invention;

[0102] Figure 2B It is along Figure 2A Top view along the B1-B1' section line;

[0103] Figure 2C It shows Figure 1A The width dimension of the first winding located on the left side of the magnetic core;

[0104] Figure 2D It shows Figure 2A The width dimension of the first winding located on the left side of the magnetic post;

[0105] Figure 3 In response to Figure 2A A schematic diagram of the manufacturing process of the magnetic component shown.

[0106] Figure 4 This is a schematic diagram of a preferred embodiment of the magnetic core of the magnetic element of the present invention;

[0107] Figures 5A to 5F It shows Figure 3 A schematic diagram of each stage of the process flow shown;

[0108] Figure 6A for Figure 2A A modified structure of the magnetic element shown is provided, wherein the first wiring region includes a plurality of first conductive layers, and the second wiring region includes a plurality of third conductive layers and a plurality of fourth conductive layers.

[0109] Figure 6B It shows Figure 6A The diagram shown illustrates the structure of the magnetic element when applied to a carrier plate structure, where the third and fourth conductive layers are connected via through-holes.

[0110] Figure 6C It shows Figure 6A The diagram shows the structure of the magnetic element when applied to a carrier plate structure, through which the third and fourth conductive layers are connected via the first sub-carrier plate.

[0111] Figure 7 This is a cross-sectional view of the magnetic element along the thickness direction of the second preferred embodiment of the present invention, wherein a gap is formed between the accommodating space and the magnetic column;

[0112] Figure 8 In response to Figure 7 A schematic diagram of the manufacturing process of the magnetic component shown.

[0113] Figures 9A to 9D It shows Figure 8 A schematic diagram of each stage of the process flow shown;

[0114] Figure 10 This is a cross-sectional view of the magnetic element along the thickness direction according to the third preferred embodiment of the present invention, wherein the first trace portion of the fourth conductive layer is connected to the first conductive layer through a blind via;

[0115] Figure 11 In response to Figure 10 A schematic diagram of the manufacturing process of the magnetic component shown.

[0116] Figures 12A to 12H It shows Figure 11 A schematic diagram of each stage of the process flow shown;

[0117] Figure 13 for Figure 10A modified structure of the magnetic element shown is provided, wherein the first trace portion of the fourth conductive layer of the magnetic element is directly connected to the first conductive layer through a mechanical blind hole, and the second trace portion of the fourth conductive layer is directly connected to the second conductive layer through a mechanical blind hole.

[0118] Figure 14 This is a cross-sectional view of the magnetic element along the thickness direction of the fourth preferred embodiment of the present invention, wherein the magnetic element further includes a third wiring region, and other conductive layers are present between the two ninth conductive layers of the third wiring region;

[0119] Figure 15 This is a cross-sectional view of the magnetic element along the thickness direction of the fifth preferred embodiment of the present invention, wherein the magnetic element further includes a third wiring region, and a through hole is provided between the two ninth conductive layers of the third wiring region. Detailed Implementation

[0120] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, they are provided so that the invention will be thorough and complete, and the concept of the exemplary embodiments will be fully conveyed to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and therefore their detailed description will be omitted.

[0121] In describing the elements / components / etc. described and / or illustrated herein, the terms “a,” “an,” “the,” “the,” and “at least one” are used to indicate the presence of one or more elements / components / etc. The terms “comprising,” “including,” and “having” are used to indicate an open-ended inclusion and to mean that additional elements / components / etc. may exist in addition to those listed. Relative terms, such as “upper” or “lower,” may be used in the embodiments to describe the relative relationship of one component of the icon to another component. It is understood that if the device of the icon is flipped so that it is upside down, the component described as being on the “upper” side will become the component on the “lower” side. Furthermore, the terms “first,” “second,” etc., in the claims are used only as illustrative marks and are not intended to limit the number of objects to which they apply.

[0122] First Embodiment

[0123] like Figures 2A-2BThe diagram illustrates the structure of a magnetic element 100 according to a first preferred embodiment of the present invention. The magnetic element 100 mainly includes a first wiring region 10, a second wiring region 20, an accommodating space 30, and magnetic pillars 40. The first wiring region 10 includes at least a first conductive layer 11 and a second conductive layer 12, both disposed along a first direction F1. The second wiring region 20 includes at least a third conductive layer 21 and a fourth conductive layer 22, both disposed along a second direction F2 perpendicular to the first direction F1. The third conductive layer 21 and the fourth conductive layer 22 are located on opposite sides of the second wiring region 20; for example, the third conductive layer 21 may be located in the lower second wiring region 20-1, and the fourth conductive layer 22 may be located in the upper second wiring region 20-2. The accommodating space 30 is located between the third conductive layer 21 and the fourth conductive layer 22. The first conductive layer 11 and the third conductive layer 21 are disposed close to the accommodating space 30, and the second conductive layer 12 is located on the side of the first conductive layer 11 away from the accommodating space 30. The magnetic pillar 40 is disposed within the accommodating space 30. The third conductive layer 21 may have a first trace portion 211, one end of which is directly connected to the first conductive layer 11, i.e., connected to the first end E1 of the first conductive layer 11, to form a portion of the winding of the magnetic element 100, for example, to form a part of the first winding CS1.

[0124] Preferably, the magnetic element 100 includes two first wiring regions 10, such as a left first wiring region 10-1 located to the left of the magnetic post 40 and a right first wiring region 10-2 located to the right of the magnetic post 40. Both the left first wiring region 10-1 and the right first wiring region 10-2 include a first conductive layer 11 and a second conductive layer 12. Furthermore, both ends of the third conductive layer 21 are directly contacted and connected to the first conductive layer 11 in the left first wiring region 10-1 and the right first wiring region 10-2, respectively; that is, each end of the third conductive layer 21 is directly contacted and connected to a first conductive layer 11.

[0125] Preferably, the fourth conductive layer 22 may have a first trace portion 221, and one end of the first trace portion 221 of the fourth conductive layer 22 may be directly connected to the first conductive layer 11, that is, connected to the second end E2 of the first conductive layer 11, to form a partial winding of the magnetic element 100, for example, to form a part of the first winding CS1. In this embodiment, both ends of the fourth conductive layer 22 are directly connected to the first conductive layer 11 in the left first wiring region 10-1 and the right first wiring region 10-2, respectively. Thus, the first trace portion 211 of the third conductive layer 21, the first conductive layer 11 in the left first wiring region 10-1, the first trace portion 221 of the fourth conductive layer 22, and the first conductive layer 11 in the right first wiring region 10-2 can be connected end to end to form the first winding CS1, that is, to form a first ring of metal layer near the magnetic post 40.

[0126] Preferably, the third conductive layer 21 may further have a second trace portion 212, located at one end of the first trace portion 211 of the third conductive layer 21, and spaced apart from the first trace portion 211 of the third conductive layer 21. The second trace portion 212 of the third conductive layer 21 can directly contact and connect to the second conductive layer 12 to form a partial winding of the magnetic element 100, for example, forming a part of the second winding CS2. In this embodiment, the third conductive layer 21 has two second trace portions 212, located at both ends of the first trace portion 211 of the third conductive layer 21, and spaced apart from the first trace portion 211 of the third conductive layer 21. Each second trace portion 212 of the third conductive layer 21 directly contacts and connects to the second conductive layer 12 in the left first wiring region 10-1 and the right first wiring region 10-2, respectively, to form a partial winding of the magnetic element 100, for example, forming a part of the second winding CS2.

[0127] Preferably, the fourth conductive layer 22 may further have a second trace portion 222, located at one end of the first trace portion 221 of the fourth conductive layer 22, and spaced apart from the first trace portion 221 of the fourth conductive layer 22. The second trace portion 222 of the fourth conductive layer 22 can directly contact and connect to the second conductive layer 12 to form a partial winding of the magnetic element 100, for example, forming a part of the second winding CS2. In this embodiment, the fourth conductive layer 22 has two second trace portions 222, located at both ends of the first trace portion 221 of the fourth conductive layer 22, and spaced apart from the first trace portion 221 of the fourth conductive layer 22. Each second trace portion 222 of the fourth conductive layer 22 directly contacts and connects to the second conductive layer 12 in the left first wiring region 10-1 and the right first wiring region 10-2, respectively, to form a partial winding of the magnetic element 100, for example, forming a part of the second winding CS2.

[0128] Preferably, the second wiring region 20 may further include at least one fifth conductive layer located on the side of the fourth conductive layer 22 away from the third conductive layer 21, for example, located in the upper second wiring region 20-2. Figure 2A In the illustrated embodiment, the at least one fifth conductive layer may include, for example, an inner fifth conductive layer 24 and at least one outer fifth conductive layer 26, with the at least one outer fifth conductive layer 26 located on the side of the inner fifth conductive layer 24 away from the fourth conductive layer 22. The inner fifth conductive layer 24 can be connected to the second trace portion 222 of the fourth conductive layer 22 via a blind via 2411 to form a portion of the winding of the magnetic element 100, for example, forming a part of the second winding CS2. Figure 2A In the illustrated embodiment, the outer fifth conductive layer 26 is a single layer and serves as the outermost conductive layer, forming part of the winding of the magnetic element 100, for example, forming part of the third winding CS3. Of course, it is understood that in other embodiments, the outer fifth conductive layer 26 may also be multiple layers, which is not intended to limit the invention.

[0129] Preferably, the second wiring region 20 further includes at least one sixth conductive layer located on the side of the third conductive layer 21 away from the fourth conductive layer 22, for example, located in the lower second wiring region 20-1. Figure 2AIn the illustrated embodiment, the at least one sixth conductive layer may include, for example, an inner sixth conductive layer 23 and at least one outer sixth conductive layer 25, with the at least one outer sixth conductive layer 25 located on the side of the inner sixth conductive layer 23 away from the third conductive layer 21. The inner sixth conductive layer 23 can be connected to the second trace portion 212 of the third conductive layer 21 via a blind via 2311 to form a portion of the winding of the magnetic element 100, for example, a portion of the second winding CS2. Figure 2A In the illustrated embodiment, the outer sixth conductive layer 25 is a single layer and serves as the outermost conductive layer, forming part of the winding of the magnetic element 100, for example, forming part of the third winding CS3. Of course, it is understood that in other embodiments, the outer sixth conductive layer 25 may also be multiple layers, which is not intended to limit the invention.

[0130] exist Figure 2A In the embodiment shown, the second conductive layer 12 in the left first wiring region 10-1, the inner fifth conductive layer 24, the second conductive layer 12 in the right first wiring region 10-2, and the inner sixth conductive layer 23 are connected through the second trace portion 212 of the third conductive layer 21, the second trace portion 222 of the fourth conductive layer 22, and blind holes 2311 and 2411 to form the second winding CS2 of the magnetic element 100, that is, to form the second ring of metal layer in the middle.

[0131] exist Figure 2A In the illustrated embodiment, the outermost third winding CS3 of the magnetic element 100 can be fabricated using a plate-edge metallization process. The third winding CS3 includes an outer fifth conductive layer 26, an outer sixth conductive layer 25, a first vertical copper foil CS31, and a second vertical copper foil CS32 connected together.

[0132] exist Figure 2A In the embodiment shown, from the inside out, the magnetic post 40 may be provided with a first insulating layer IS1, a first winding CS1, a second insulating layer IS2, a second winding CS2, a third insulating layer IS3, and a third winding CS3, respectively.

[0133] Preferably, in Figure 2AIn the illustrated embodiment, the first conductive layer 11 and the second conductive layer 12 in the left first wiring region 10-1 and the right first wiring region 10-2 can both be fabricated using a single piece of double-sided copper-clad laminate. For example, the first conductive layer 11 and the second conductive layer 12 in the left first wiring region 10-1 can be formed using a double-sided copper-clad first sub-carrier board SCP1, and the first conductive layer 11 and the second conductive layer 12 in the right first wiring region 10-2 can be formed using a double-sided copper-clad first sub-carrier board SCP2. More preferably, the double-sided copper-clad first sub-carrier boards SCP1 and SCP2 can be double-sided copper-clad on an insulating board, so that the insulating board of the first sub-carrier boards SCP1 and SCP2 can form part of the second insulating layer IS2.

[0134] Will Figure 1A The structure of the prior art shown is similar to Figure 2A The structure of the present invention shown is further compared, as follows: Figure 2C and Figure 2D The enlarged view shown is a partial image. Among them, Figure 2C It shows Figure 1A The width dimension of the first winding 101' located to the left of the magnetic core 200'. Figure 2D It shows Figure 2A The width dimension of the first winding CS1 located on the left side of the magnetic column 40. Figure 2C The width dimension of the first winding 101' includes the distance a1 between the connecting hole 101-2' and the magnetic core 200', the diameter D1 of the connecting hole 101-2', and the width c1 of the copper foil covering the connecting hole 101-2'. Figure 2D The width of the first winding CS1 includes the distance a2 between the first conductive layer 11 on the first subcarrier SCP1 and the magnetic post 40, the width b2 of the first conductive layer 11 on the first subcarrier SCP1, and the width c2 of the copper foil covering the first conductive layer 11 on the first subcarrier SCP1. Based on the process capabilities of conventional carrier boards, regardless of whether through-holes or the first conductive layer on the first subcarrier is used to connect the upper and lower copper foils (or conductive layers) located above and below the magnetic post, the structural dimensions a1 = a2 and c1 = c2 can be considered. Figure 2C and Figure 2D The main structural differences are Figure 2C It is a through-hole structure, and Figure 2DIt is a metal wiring layer structure. Assuming the required copper foil thickness is 2 oz, using the metal wiring layer structure described in this invention, the first conductive layer 11 of SCP1 on the first subcarrier can be set to 2 oz (the width of the conductive layer is approximately 0.07 mm). However, to achieve a current carrying capacity of 2 oz using existing through-hole structures, the diameter of the through-hole needs to be set to 0.4 mm to electroplate a copper thickness of 2 oz within the through-hole. Therefore, the metal wiring layer structure of this invention can significantly reduce the width of the magnetic element. This reduction in the size of the magnetic element can improve power density. If the width of the magnetic element remains unchanged, the reduced size can be applied to the magnetic post, effectively increasing the cross-sectional area of ​​the magnetic core and thus reducing magnetic loss.

[0135] contrast Figure 1B and Figure 2B It is evident that in the prior art, a certain safe distance needs to be maintained between through holes, while the metal wiring layer of the present invention is a whole copper foil structure, which makes more reasonable use of space and further improves the current carrying capacity of magnetic components.

[0136] against Figure 2A The present invention provides a method for manufacturing a magnetic element, as shown in the structure of the magnetic element. The magnetic element includes a first component, a first sub-carrier plate, and a magnetic pillar. The process flow of the method for manufacturing the magnetic element is as follows: Figure 3 As shown, it mainly includes the following steps:

[0137] Step S1: A first receiving groove is formed on the first component. The first receiving groove is used to accommodate the first subcarrier board to form a first wiring area. The first wiring area includes a first conductive layer and a second conductive layer. The first receiving groove can be formed by, for example, but not limited to, milling.

[0138] Step S2: A first dielectric layer is formed on the upper surface of the first component, and a second dielectric layer is formed on the lower surface of the first component. The first dielectric layer, the second dielectric layer, and the first component are combined to form a second component. The second component can be formed by, for example, but not limited to, a lamination process.

[0139] Step S3: Expose the lower end faces of the first conductive layer and the second conductive layer. This exposure can be achieved, for example, by brushing the lower surface of the second component.

[0140] Step S4: A third conductive layer is formed on the lower surface of the second component. One end of the first trace portion of the third conductive layer is directly connected to the first conductive layer to form a partial winding of the magnetic element. The third conductive layer can be formed, for example, but not limited to, a metallization process.

[0141] Preferably, before step S1, the method for manufacturing the magnetic element may further include the following steps:

[0142] Step S01: Provide a core board, form a second receiving groove on the core board, and install a magnetic post in the second receiving groove. The second receiving groove can be formed by, for example, but not limited to, milling.

[0143] Step S02: An upper dielectric layer is formed on the upper surface of the core board, and a lower dielectric layer is formed on the lower surface of the core board. The upper dielectric layer and the lower dielectric layer together with the core board form a first assembly. The first assembly can be formed by, for example, but not limited to, a lamination process.

[0144] Furthermore, step S4 may also include: forming a first blind hole on the second component by means of, but not limited to, a drilling process, wherein the first blind hole is connected to the first conductive layer; and forming a fourth conductive layer on the upper surface of the second component by means of, but not limited to, a metallization process, wherein one end of a first trace portion of the fourth conductive layer is connected to the first conductive layer through the first blind hole to form a partial winding of the magnetic element, such as forming a part of the first winding.

[0145] Furthermore, step S4 may also include: disconnecting the third conductive layer by means of, but not limited to, an etching process, to form a second trace portion of the third conductive layer, wherein the second trace portion of the third conductive layer is directly connected to the second conductive layer to form a portion of the winding of the magnetic element, such as a second winding.

[0146] Further, step S3 may include: exposing the upper surfaces of the first conductive layer and the second conductive layer by, for example, but not limited to, brushing the upper surface of the second component. Step S4 may also include: forming a fourth conductive layer on the upper surface of the second component by, for example, but not limited to, a metallization process; and disconnecting the fourth conductive layer by, for example, but not limited to, an etching process, to form a first trace portion and a second trace portion of the fourth conductive layer. Wherein, one end of the first trace portion of the fourth conductive layer is directly connected to the first conductive layer; and the second trace portion of the fourth conductive layer is directly connected to the second conductive layer to form a portion of the winding of the magnetic element, for example, a part of the second winding.

[0147] Specifically, such as Figures 5A-5F It shows Figure 3 The process flow shown includes each stage, of which:

[0148] Phase 1: Embed a magnetic core into a core board CB, such as Figure 5A As shown.

[0149] In this embodiment, the magnetic core can be a ring composed of a single magnetic column, or it can be a triangular ring, a square, a grid, or other shapes composed of multiple magnetic columns. This embodiment does not limit the specific structure of the magnetic core. Figure 4 As shown, the magnetic core 400 can be, for example, a ring-shaped structure composed of at least one segment of magnetic pillar 40 joined end to end, or a U-shaped structure composed of joined end to end, wherein the magnetic core 400 includes a square-shaped window. The magnetic core 400 can be integrally formed from these magnetic pillars 40, or it can be assembled from multiple separately manufactured magnetic pillars 40. In the manufacturing process of the magnetic core, a first method is to set a window on the magnetic core, which can be directly formed using a mold during the core forming process; a second method is to form it on a magnetic substrate. The first method is characterized by ease of processing, while the second method has the advantage of high dimensional accuracy, but the present invention is not limited thereto.

[0150] To facilitate the explanation of the manufacturing process, the following illustrations use a section of the magnetic core (e.g., magnetic column 40) as an example, but this is not intended to limit the invention.

[0151] First, a core board CB (e.g., made of insulating material) is introduced. Grooves are milled into the core board CB, for example, forming a receiving groove CG1 to accommodate the magnetic post 40. A dielectric layer L1 is formed on the upper surface of the magnetic post 40, and a dielectric layer L2 is formed on the lower surface of the magnetic post 40. Through a lamination process, the magnetic post 40, dielectric layer L1, dielectric layer L2, and core board CB are formed into a single unit, such as... Figure 5A As shown. Apart from the magnetic column 40, the remaining parts are referred to as the first component M1.

[0152] Optionally, considering that the core material is a stress-sensitive material, the thickness of the core plate CB can be slightly higher than the thickness of the core (e.g., the magnetic column 40), so that the external lamination force does not act directly on the core, thereby reducing the stress of the core.

[0153] Optionally, the magnetic core (e.g., magnetic post 40) can also be embedded in the core board CB after a transition layer is formed on its surface (not shown in the figure). The transition layer formed on the surface of the magnetic core usually has the following functions: (1) Insulation function, for example: when the magnetic material used is a material with low surface insulation resistance, such as MnZn ferrite, a transition layer can be added to reduce inter-turn leakage; for transformers that need to be isolated, the primary and secondary sides need to have high withstand voltage requirements, and a transition layer can be set on the surface of the magnetic core to meet the safety withstand voltage requirements; in addition, the transition layer materials commonly used as insulation layers include epoxy resin, silicone, acetal materials, polyester materials, polyesterimide materials, polyimide materials or parylene, etc.; (2) Bonding strength enhancement function, for example: when the bonding strength between the surface of the magnetic material and the subsequent metal wiring layer is poor, a transition layer can be added to the core. (2) Apply a bonding-enhancing coating, such as epoxy resin, to improve the bonding strength between itself and subsequent layers, or to make it easy to achieve good bonding strength through surface treatment (such as roughening, surface modification, etc.); (3) Stress relief function, for example: when the selected magnetic material is a stress-sensitive material, such as ferrite material, in order to avoid or reduce the stress generated by subsequent processes on the magnetic material, which may cause degradation of magnetic properties, such as increased loss or decreased permeability, a stress relief material, such as organosilicon, can be set; (4) Core protection (avoiding the influence of materials directly adjacent to the core on the properties of the magnetic material); (5) Surface flatness function, for example, to improve the surface flatness of the core, so as to facilitate the smooth progress of subsequent processes, etc.

[0154] In one possible implementation, the transition layer (not shown) can be formed on the surface of at least one section of the magnetic core by means of spraying, dipping, electrophoresis, electrostatic spraying, chemical vapor deposition, physical vapor deposition, sputtering, evaporation or printing.

[0155] Phase 2: Embedding the first sub-carrier plates SCP1 and SCP2 in the first component M1, such as Figure 5B and 5C As shown.

[0156] Specifically, the first subcarrier plates SCP1 and SCP2 include a first conductive layer 11 and a second conductive layer 12. First, by milling grooves into the first component M1, receiving grooves CG2 for accommodating the first subcarrier plates SCP1 and SCP2 are formed on the left and right sides of the magnetic post 40, such as... Figure 5B As shown. Next, the first subcarrier plates SCP1 and SCP2 are placed into the receiving groove CG2, and a dielectric layer L3 is formed on the upper surface of the magnetic pillar 40, and a dielectric layer L4 is formed on the lower surface of the magnetic pillar 40. Through a pressing process, the dielectric layer L3, dielectric layer L4, the first subcarrier plates SCP1 and SCP2, the magnetic pillar 40, and the first component M1 are cured at high temperature to form a single unit again, as shown. Figure 5CAs shown. Apart from the magnetic pillar 40 and the first subcarrier plates SCP1 and SCP2, the rest is referred to as the second component M2.

[0157] Stage 3: Form the first winding CS1, such as Figure 5D and 5E As shown.

[0158] Specifically, the second component M2 exposes the first end face EF1 and the second end face EF2 of the first sub-carrier boards SCP1 and SCP2 through a brushing process. The first sub-carrier boards SCP1 and SCP2 have a first conductive layer 11 and a second conductive layer 12, with the conductive layer closer to the magnetic post 40 being the first conductive layer. A horizontal copper foil of the second component M2 is formed on the exposed first end face EF1 and second end face EF2 through a metallization process. The portion below the magnetic post 40 is called the third conductive layer 21, and the portion above the magnetic post 40 is called the fourth conductive layer 22. The third conductive layer 21 includes a first trace 211 and a second trace 212, and the fourth conductive layer 22 also includes a first trace 221 and a second trace 222, as shown below. Figure 5E As shown, the two ends of the first trace portion 211 of the third conductive layer 21 are directly connected to the first end (corresponding to the first end face EF1) of the first conductive layer 11 on the first subcarrier plates SCP1 and SCP2, respectively. The two ends of the first trace portion 221 of the fourth conductive layer 22 are directly connected to the second end (corresponding to the second end face EF2) of the first conductive layer 11 on the first subcarrier plates SCP1 and SCP2, respectively, and form the first winding CS1.

[0159] Stage 4: Form the second winding CS2, such as Figure 5F As shown.

[0160] based on Figure 5E The structure shown is formed through pressing, drilling, and metallization processes. Figure 5F The second winding CS2 is shown.

[0161] More specifically, it can be found in, for example Figure 5E The lower surface of the second component M2 is formed with a dielectric layer L5, and the upper surface of the second component M2 is formed with a dielectric layer L6. Through a lamination process, the second component M2, dielectric layer L5, and dielectric layer L6 are again formed into a single unit, as shown below. Figure 5F As shown, it is defined as the third component M3.

[0162] Blind holes 2311 and 2411 are formed in dielectric layer L5 and dielectric layer L6 respectively by drilling process. Blind hole 2311 in dielectric layer L5 is connected to the second trace portion 212 of the third conductive layer 21, and blind hole 2411 in dielectric layer L6 is connected to the second trace portion 222 of the fourth conductive layer 22.

[0163] A fifth conductive layer 24 is formed on the upper surface of the third component M3 and a sixth conductive layer 23 is formed on the lower surface of the third component M3 by a metallization process. The fifth conductive layer 24 is connected to the second trace portion 222 of the fourth conductive layer 22 through a blind via 2411, and the sixth conductive layer 23 is connected to the second trace portion 212 of the third conductive layer 21 through a blind via 2311.

[0164] After forming dielectric layers on the surfaces of the fifth conductive layer 24 and the sixth conductive layer 23, the portion of the winding of the magnetic element located outside the magnetic element can be formed by methods such as, but not limited to, edge metallization processes, i.e., forming a portion as shown in the image. Figure 2A The third winding CS3 is shown in the diagram.

[0165] For example Figure 1A In the prior art winding structure shown, the corresponding process sequence is to first form the vertical connection hole 101-2' of the first winding, and then form the vertical connection hole 102-2' of the second winding. Because the vertical connection holes 101-2' and 102-2' of the first and second windings are close together, the drilling process easily pulls the fiberglass, causing microchannels to form between them. The subsequent metallization process can easily cause a short circuit between the two winding layers. In this embodiment, the vertical connection between the first winding CS1 and the second winding CS2 is achieved through the first conductive layer 11 and the second conductive layer 12 embedded in the first subcarrier boards SCP1 and SCP2. The first subcarrier boards SCP1 and SCP2 can be made by cutting a single piece of double-sided copper-clad laminate to the required size. The insulation characteristics between the double-sided copper-clad laminates are good and do not change due to embedding, thus solving the short circuit problem between the vertical connection parts (i.e., vertical connection holes) of the first and second windings in the prior art.

[0166] Correspondingly, such as Figure 2A As shown, the present invention also provides a carrier board CP, which includes a first wiring region 10 and a second wiring region 20. The first wiring region 10 includes a first conductive layer 11 and a second conductive layer 12, both disposed along a first direction F1. The second wiring region 20 includes a third conductive layer 21 and a fourth conductive layer 22, both disposed along a second direction F2 perpendicular to the first direction F1, and the third conductive layer 21 and the fourth conductive layer 22 may be located on opposite sides of the second wiring region 20. Furthermore, the third conductive layer 21 has a first trace portion 211, which can be directly connected to the first conductive layer 11.

[0167] In other embodiments, the fourth conductive layer 22 of the carrier CP may have a first trace portion 221, and the first trace portion 221 of the fourth conductive layer 22 may be directly connected to the first conductive layer 11.

[0168] In other embodiments, the second wiring region 20 of the carrier board CP may further include an inner fifth conductive layer 24 and an inner sixth conductive layer 23. The fifth conductive layer 24 can be connected to the second conductive layer 12 through a blind via 2411, and the sixth conductive layer 23 can be connected to the second conductive layer 12 through a blind via 2311.

[0169] In other embodiments, the second wiring region 20 of the carrier board CP may further include an outer fifth conductive layer 26 and an outer sixth conductive layer 25, and the first wiring region 10 may further include a first vertical copper foil CS31 and a second vertical copper foil CS32.

[0170] like Figure 6A As shown, it illustrates Figure 2A This diagram illustrates a modified structure of a magnetic element. The magnetic element 200 includes a first wiring region 10 and a second wiring region 20. The first wiring region 10 is formed from a first sub-carrier board and includes multiple first conductive layers 11. A third conductive layer 21 in the second wiring region 20 includes multiple first traces 211 and multiple second traces (not shown). A fourth conductive layer 22 in the second wiring region 20 includes multiple first traces 221 and multiple second traces (not shown). The multiple first conductive layers 11 are connected one-to-one with the multiple first traces 211 on the third conductive layer 21 and the multiple first traces 221 on the fourth conductive layer 22. A magnetic pillar 40 is located between the third conductive layer 21 and the fourth conductive layer 22.

[0171] right Figure 6A The structure of the magnetic element 200 in the illustrated embodiment is further extended by applying the structural features of its metal wiring layer to the structure, such as... Figure 6B and Figure 6C As shown. Among them. Figure 6B This is a schematic diagram of a structure in which the third conductive layer 21 (i.e., the lower horizontal copper foil) and the fourth conductive layer 22 (i.e., the upper horizontal copper foil) are connected through vias V1 and V2. Figure 6C This is a schematic diagram showing the structure through which the third conductive layer 21 (i.e., the lower horizontal copper foil) and the fourth conductive layer 22 (i.e., the upper horizontal copper foil) are connected via the first subcarrier SCP4. Figure 6BIt can be clearly seen that the carrier board CP-1 includes a first trace portion 211 and a second trace portion 212 of the third conductive layer 21, and a first trace portion 221 and a second trace portion 222 of the fourth conductive layer 22. The first trace portion 211 of the third conductive layer 21 and the first trace portion 221 of the fourth conductive layer 22 are connected through a through-hole V1, and the second trace portion 212 of the third conductive layer 21 and the second trace portion 222 of the fourth conductive layer 22 are connected through a through-hole V2. From Figure 6C It is evident that the carrier CP-2 also includes a first sub-carrier SCP4. The first end of the first conductive layer 11 of the first sub-carrier SCP4 is directly connected to the first trace 211 of the third conductive layer 21 of the carrier CP-2, and the second end is directly connected to the first trace 221 of the fourth conductive layer 22 of the carrier CP-2. Similarly, the first end of the second conductive layer 12 of the first sub-carrier SCP4 is directly connected to the second trace 212 of the third conductive layer 21 of the carrier CP-2, and the second end is directly connected to the second trace 222 of the fourth conductive layer 22 of the carrier CP-2. Clearly, the width dimension W1 resulting from the vias V1 and V2 is greater than the width dimension W2 resulting from the first sub-carrier SCP4. Therefore, using the structural features of the metal wiring layer of this invention in a conventional carrier structure can still achieve the purpose of reducing the carrier size.

[0172] Second Embodiment

[0173] like Figure 7 The diagram illustrates the structure of a magnetic element 100-1 according to a second preferred embodiment of the present invention. The difference from the first embodiment is that a gap G34 is provided between the magnetic pillar 40 and its surrounding insulating layer; that is, the size of the accommodating space 30 formed on the carrier plate CP is larger than the size of the magnetic pillar 40. This arrangement is primarily based on the consideration that the magnetic core is a stress-sensitive material. If the magnetic core and the carrier plate are not in direct contact, then during thermal expansion and contraction, the carrier plate material and the magnetic core material will not exert thermal stress on the magnetic core due to their different coefficients of thermal expansion. Therefore, the structure of the magnetic element 100-1 described in this embodiment can further reduce the magnetic core stress, thereby reducing magnetic core loss.

[0174] against Figure 7 The structure of the magnetic component 100-1 shown is illustrated in the following process flow diagram. Figure 8 As shown, it includes the following steps:

[0175] Step S71: A core board is provided, a second receiving groove is formed on the core board, and a gasket is installed in the second receiving groove. An upper dielectric layer is formed on the upper surface of the core board, and a lower dielectric layer is formed on the lower surface of the core board. The upper dielectric layer and the lower dielectric layer together with the core board form a first assembly. The second receiving groove can be formed by, for example, but not limited to, milling, and the first assembly can be formed by, for example, but not limited to, a pressing process.

[0176] Step S72: Form the first winding, the second winding, and the third winding respectively.

[0177] Step S73: Remove the gasket from the second receiving groove to form a receiving space.

[0178] Step S74: Install the magnetic column in the accommodating space.

[0179] Specifically, such as Figures 9A-9D It shows Figure 8 The process flow shown includes each stage, of which:

[0180] Phase 1: Embed a 50mm gasket into a core board CB, such as... Figure 9A As shown.

[0181] First, a core board CB is introduced, and grooves are milled into the core board CB to form a receiving groove CG1 for accommodating the gasket 50. A dielectric layer L1 is formed on the upper surface of the core board CB, and a dielectric layer L2 is formed on the lower surface of the core board CB. Through a pressing process, the gasket 50, dielectric layer L1, dielectric layer L2, and core board CB are formed into a single unit, as shown below. Figure 9A As shown. This overall structure is called the first component M1.

[0182] Optionally, the embedded gasket 50 is made of polytetrafluoroethylene (PTFE), a material that is resistant to acids and alkalis, high temperatures, and various organic solvents. Therefore, the dielectric layer L1, dielectric layer L2, and core plate CB are difficult to mix with PTFE, resulting in non-adhesive properties (facilitating the subsequent removal of the gasket 50 from the third assembly).

[0183] Phase 2: Forming the first winding CS1, the second winding CS2, and the third winding CS3, as follows: Figure 9B As shown.

[0184] The formation process of these windings CS1 to CS3 can be referred to the first embodiment, such as... Figures 5B-5F As shown.

[0185] Phase 3: Forming a accommodating space of 30, such as Figure 9C As shown.

[0186] The embedded gasket 50 is removed from the third component M3, forming a receiving space 30 for accommodating the magnetic post 40. Figure 9C The structure shown is a carrier plate structure.

[0187] Stage 4: The magnetic column 40 is inserted into the receiving space 30 of the carrier plate structure to form the magnetic element 100-1 described in this embodiment, such as... Figure 9D As shown.

[0188] Furthermore, the size of the gasket 50 can be slightly larger than the size of the magnetic post 40. For example, if the cross-sectional dimensions of the magnetic post 40 are a*b, then the size of the gasket 50 can be (a+0.1mm)*(b+0.1mm). Thus, after the gasket 50 is removed in stage 3, the size of the accommodating space 30 inherits the size of the gasket 50. Since the width and height of the magnetic post 40 are both smaller than the width and height of the accommodating space 30, there is a gap G34 between the magnetic post 40 and its surrounding insulating layer (see reference). Figure 7 This ensures that during service, the magnetic column 40 will not experience increased stress due to the difference in thermal expansion coefficients with the carrier plate CP, thereby reducing core loss.

[0189] Third Embodiment

[0190] like Figure 10 As shown, it illustrates the structure of a magnetic element 100-2 according to a third preferred embodiment of the present invention. Figure 10 In the illustrated embodiment, the second wiring region 20 of the magnetic element 100-2 includes at least one fifth conductive layer (e.g., including an inner fifth conductive layer 24 and an outer fifth conductive layer 26), located on the side of the fourth conductive layer 22 of the magnetic element 100-2 away from the third conductive layer 21. The second wiring region 20 also includes at least one sixth conductive layer (e.g., including an inner sixth conductive layer 23 and an outer sixth conductive layer 27), located on the side of the third conductive layer 21 away from the fourth conductive layer 22. The difference from the previous embodiment is that the first trace portion 241 of the inner fifth conductive layer 24 is disposed at the second end E2 of the first subcarrier boards SCP1 and SCP2, and is connected to the first trace portion 221 of the fourth conductive layer 22 through a blind via 2411. The first trace portion 221 of the fourth conductive layer 22 is in direct contact with the first conductive layer 11 on the first subcarrier boards SCP1 and SCP2. The first trace 241 of the inner fifth conductive layer 24, the blind hole 2411, the first trace 221 of the fourth conductive layer 22, the first conductive layer 11 on the first subcarrier plates SCP1 and SCP2, and the first trace 211 of the third conductive layer 21 are connected to form the first winding CS1 of the magnetic element 100-2, that is, the first metal layer near the magnetic post 40.

[0191] exist Figure 10 In the illustrated embodiment, the inner fifth conductive layer 24 further has two second trace portions 242 located at both ends of the first trace portion 241 of the inner fifth conductive layer 24, and spaced apart from the first trace portion 241 of the inner fifth conductive layer 24. The first trace portion 261 of the outer fifth conductive layer 26 is connected to the second trace portion 242 of the inner fifth conductive layer 24 via a blind via 2611. The second trace portion 242 of the inner fifth conductive layer 24 is connected to the second trace portion 222 of the fourth conductive layer 22 via a blind via 2421. The second trace portion 222 of the fourth conductive layer 22 directly contacts and connects to the second conductive layer 12 on the first subcarrier boards SCP1 and SCP2, to form a partial winding of the magnetic element 100-2, for example, forming a part of the second winding CS2.

[0192] exist Figure 10 In the embodiment shown, the first trace portion 231 of the inner sixth conductive layer 23 is disposed at the first end E1 of the first subcarrier plates SCP1 and SCP2, and is connected to the second trace portion 212 of the third conductive layer 21 through a blind hole 2311. The second trace portion 212 of the third conductive layer 21 directly contacts and connects to the second conductive layer 12 on the first subcarrier plates SCP1 and SCP2 to form a partial winding of the magnetic element 100-2, for example, forming a part of the second winding CS2. The first trace 261 of the outer fifth conductive layer 26, the blind hole 2611, the second trace 242 of the inner fifth conductive layer 24, the blind hole 2421, the second trace 222 of the fourth conductive layer 22, the second conductive layer 12 on the first subcarrier plates SCP1 and SCP2, the second trace 212 of the third conductive layer 21, the blind hole 2311, and the first trace 231 of the inner sixth conductive layer 23 are connected to form the second winding CS2 of the magnetic element 100-2, that is, the second metal layer located in the middle.

[0193] exist Figure 10 In the illustrated embodiment, the outermost third winding CS3 of the magnetic element 100-2 can be fabricated using a plate-edge metallization process. The third winding CS3 includes a fifth outer conductive layer 28, a sixth outer conductive layer 27, a first vertical copper foil CS31, and a second vertical copper foil CS32 connected together.

[0194] Since the dimensions of the blind holes 2411, 2421, 2311, and 2611 in this embodiment are significantly smaller than the dimensions of the through holes in the prior art, the width of the resulting magnetic element will also be correspondingly reduced. Compared to the first embodiment, a gap G34 is provided between the magnetic post 40 and the surrounding insulating layer in this embodiment, which reduces the stress on the magnetic core and thus reduces the magnetic core loss.

[0195] For example Figure 10 The structure of the magnetic element 100-2 shown is illustrated in the following process flow diagram. Figure 11 As shown, it includes the following steps:

[0196] Step S101: Provide a core board as a first component; form a first receiving groove on the first component, the first receiving groove being used to accommodate a first sub-carrier board to form a first wiring area, the first wiring area including a first conductive layer and a second conductive layer; form a first dielectric layer on the upper surface of the first component and form a second dielectric layer on the lower surface of the first component, the first dielectric layer, the second dielectric layer, and the first component forming a second component. The first receiving groove can be formed by, for example, but not limited to, milling, and the second component can be formed by, for example, but not limited to, lamination.

[0197] Step S102: Expose the lower and upper surfaces of the first conductive layer and the second conductive layer by, for example but not limited to, brushing the lower and upper surfaces of the second component.

[0198] Step S103: A third conductive layer and a fourth conductive layer are formed on the lower surface and upper surface of the second component, respectively, by means of, but not limited to, metallization processes.

[0199] Step S104: A second receiving groove is formed on the middle portion of the second component. The second receiving groove can be formed by, for example, but not limited to, milling.

[0200] Step S105: Provide a cover plate and place it above the second component. The lower surface of the cover plate and the second receiving groove form a receiving space. The first winding is formed through processes including but not limited to drilling, metallization, and etching.

[0201] Step S106: Form the second winding.

[0202] Step S107: Form the third winding.

[0203] Step S108: Install the magnetic column in the accommodating space.

[0204] Specifically, such as Figures 12A-12H It shows Figure 11 The process flow shown includes each stage, of which:

[0205] Phase 1: Embed the first subcarriers SCP1 and SCP2 into a single-core board CB, as follows: Figure 12A As shown.

[0206] First, a core board CB is introduced as the first component M1. Grooves are milled on the core board CB to form the first receiving groove CG2, which accommodates the first sub-carrier boards SCP1 and SCP2. A dielectric layer L1 is formed on the upper surface of the first component M1, and a dielectric layer L2 is formed on the lower surface of the first component M1. Through a lamination process, the first sub-carrier boards SCP1 and SCP2, dielectric layers L1 and L2, and the core board CB are formed into a single unit, as shown below. Figure 12A As shown. Among them, apart from the first subcarrier plates SCP1 and SCP2, the rest are referred to as the second component M2.

[0207] Phase 2: Forming a metal wiring layer on the second component M2, such as Figures 12B-12C As shown.

[0208] Specifically, the second component M2 exposes the first end face EF1 and the second end face EF2 of the first sub-carrier plates SCP1 and SCP2 through a brushing process, such as... Figure 12B As shown. Horizontal copper foil is formed on the exposed first end face EF1 and second end face EF2 through a metallization process, forming the third conductive layer 21 and the fourth conductive layer 22. Through an etching process, the horizontal copper foil corresponding to the first trace portion 211 and the second trace portion 212 on the third conductive layer 21 is disconnected, so that the two ends of the first trace portion 211 of the third conductive layer 21 are directly connected to the first conductive layer 11 on the first sub-carrier board SCP1 and the first conductive layer 11 on the first sub-carrier board SCP2, respectively; and the horizontal copper foil corresponding to the first trace portion 221 and the second trace portion 222 on the fourth conductive layer 22 is disconnected, so that the two ends of the first trace portion 221 of the fourth conductive layer 22 are directly connected to the first conductive layer 11 on the first sub-carrier board SCP1 and the first conductive layer 11 on the first sub-carrier board SCP2, respectively; and the two second trace portions 222 of the fourth conductive layer 22 are directly connected to the second conductive layer 12 on the first sub-carrier board SCP1 and the second conductive layer 12 on the first sub-carrier board SCP2, respectively. Figure 12C As shown.

[0209] Phase 3: Forming a accommodating space of 30, such as Figures 12D-12E As shown.

[0210] A milled groove (i.e., a slotted hole) is made in the middle of the second component M2 to form a second receiving groove CG1, such as... Figure 12DAs shown. A cover plate 60 is placed above the second component M2 (i.e., above the slot), as... Figure 12E As shown, the cover plate 60 and the second component M2 can be bonded together as a whole using an insulating material (not shown). The lower surface of the cover plate 60 and the second receiving groove CG1 form a receiving space 30, which is used to accommodate the magnetic post 40. Based on this, a first blind hole 61 (i.e., corresponding to) is formed on the cover plate 60 by laser drilling. Figure 10 Blind hole 2411) and second blind hole 62 (i.e., corresponding to Figure 10 Blind hole 2421); an inner fifth conductive layer 24 is formed on the upper surface of the cover plate 60 by a metallization process, and the inner fifth conductive layer 24 is broken by an etching process, so that the inner fifth conductive layer 24 has a first trace portion 241 and two second trace portions 242, as shown. Figure 12E As shown, the two ends of the first trace portion 241 of the inner fifth conductive layer 24 are connected to the first trace portion 221 of the fourth conductive layer 22 through the first blind hole 61, and the second trace portion 242 of the inner fifth conductive layer 24 is connected to the second trace portion 222 of the fourth conductive layer 22 through the second blind hole 62. The first trace portion 241 of the inner fifth conductive layer 24, the first blind hole 61, the two first trace portions 221 of the fourth conductive layer 22, the first conductive layer 11 on the first subcarrier boards SCP1 and SCP2, and the first trace portion 211 of the third conductive layer 21 are connected to form the first winding CS1 of the magnetic element 100-2.

[0211] Stage 4: Form the second winding CS2 and the third winding CS3, as follows Figures 12F-12G As shown.

[0212] A dielectric layer L3 is formed on the lower surface of the third conductive layer 21, and a dielectric layer L4 is formed on the upper surface of the inner fifth conductive layer 24. The dielectric layer L3, the dielectric layer L4, the cover plate 60, and the second component M2 are integrally formed by a pressing process and defined as the third component M3. Figure 12F As shown.

[0213] Two third blind holes L31 (corresponding to) are formed on the dielectric layer L3 by drilling. Figure 10 Blind via 2311) and two fourth blind vias L41 formed on the dielectric layer L4 (i.e., corresponding to the blind ... Figure 10 Each of the third blind holes L31 is connected to a second trace portion 212 of the third conductive layer 21, and each of the fourth blind holes L41 is connected to a second trace portion 242 of the inner fifth conductive layer 24.

[0214] An inner sixth conductive layer 23 is formed on the lower surface of the dielectric layer L3 and an outer fifth conductive layer 26 is formed on the upper surface of the dielectric layer L4 through a metallization process. Each end of the inner sixth conductive layer 23 is connected to a second trace portion 212 of the third conductive layer 21 through a third blind via L31, and each end of the outer fifth conductive layer 26 is connected to a second trace portion 242 of the inner fifth conductive layer 24 through a fourth blind via L41. The inner sixth conductive layer 23, the third blind via L31, the two second trace portions 212 of the third conductive layer 21, the second conductive layer 12 on the first subcarrier boards SCP1 and SCP2, the two second trace portions 222 of the fourth conductive layer 22, the second blind via L62, the two second trace portions 242 of the inner fifth conductive layer 24, the fourth blind via L41, and the outer fifth conductive layer 26 are connected to form the second winding CS2 of the magnetic element 100-2, as shown below. Figure 12F As shown.

[0215] After dielectric layers are formed on the upper surface of the outer fifth conductive layer 24 and the lower surface of the inner sixth conductive layer 23, the third winding CS3 of the magnetic element 100-2 is formed by a method such as, but not limited to, edge metallization. Figure 12G As shown.

[0216] Stage 5: The magnetic column 40 is inserted into the accommodating space 30 of the third component M3 to form the magnetic element 100-2 described in this embodiment, as follows. Figure 12H As shown.

[0217] Comparing the processes of the second embodiment and the third embodiment, it is clear that the third embodiment eliminates the gasket 50, which not only simplifies the process but also reduces costs.

[0218] like Figure 13 As shown, it illustrates Figure 10 A modified magnetic element 100-3, wherein the first trace 221 of the fourth conductive layer 22 of the magnetic element 100-3 is directly connected to the first conductive layer 11 on the first subcarrier plates SCP1 and SCP2 through a mechanical blind hole 2211', and the second trace 222 of the fourth conductive layer 22 is directly connected to the second conductive layer 12 on the first subcarrier plates SCP1 and SCP2 through a mechanical blind hole 2212'. Because Figure 13 The structure shown can directly connect the first trace 221 of the fourth conductive layer 22 and the first conductive layer 11 through a mechanical blind via, thus compared to Figures 12A-12H The process flow shown can be omitted for this magnetic component 100-3. Figure 12B The brushing process of the upper surface EF2 of the first subcarriers SCP1 and SCP2 and Figure 12C The metallization operation on the upper surface EF2 of the first subcarrier plates SCP1 and SCP2.

[0219] Optional, based on Figure 10 Mechanical blind hole structures can be set only at a certain corner position of the magnetic pillar 40 corresponding to the connection of the conductive layer, while laser blind hole structures are used at other positions.

[0220] Optionally, the magnetic element 100-3 may contain only one first subcarrier plate, for example... Figure 13 It may consist only of the first subcarrier plate SCP1 located on the left side of the magnetic pillar 40, and the connection on the right side of the magnetic pillar 40 may be made through a through-hole structure in the prior art, which can still achieve the purpose of reducing the size of the magnetic components.

[0221] Fourth embodiment

[0222] like Figure 14 The diagram illustrates the structure of a magnetic element 100-4 according to a fourth preferred embodiment of the present invention. The difference from the previous embodiments is that the magnetic element 100-4 includes two first wiring regions 10-1 and 10-2, a second wiring region 20, two spaced-apart accommodating spaces 30-1 and 30-2, two magnetic pillars 40-1 and 40-2, and a third wiring region 70. The two accommodating spaces 30-1 and 30-2 are both located between the two first wiring regions 10-1 and 10-2, and the third wiring region 70 is located between the two accommodating spaces 30-1 and 30-2. Each accommodating space 30-1 / 30-2 contains one magnetic pillar 40-1 / 40-2. Furthermore, the winding of the magnetic element 100-4 includes multiple sub-windings, which are wound sequentially from the inside to the outside along the circumference of each magnetic post 40-1 / 40-2. For example, the first sub-windings CS1-1 and CS1-2 are located in the innermost layer, the second sub-windings CS2-1 and CS2-2 are located in the middle layer, and the third sub-windings CS3-1 and CS3-2 are located in the outermost layer.

[0223] The third wiring region 70 includes two ninth conductive layers 71-1 and 71-2, both disposed along the first direction F1 and located on opposite sides of the third wiring region 70. The third conductive layer 21 has two first trace portions 211-1 and 211-2, respectively disposed near the accommodating spaces 30-1 and 30-2. The first conductive layer 11 disposed opposite to each magnetic post 40-1 / 40-2 and one ninth conductive layer 71-1 / 71-2 are directly connected to the first and second ends of the first trace portions 211-1 / 211-2 of the third conductive layer 21 near the magnetic post 40-1 / 40-2, respectively, to form a portion of the winding of the magnetic element 100-4, for example, forming a portion of the first sub-winding CS1-1 and a portion of CS1-2. The fourth conductive layer 22 has two first trace portions 221-1 and 221-2, respectively disposed near the accommodating spaces 30-1 and 30-2. The first conductive layer 11 and the ninth conductive layer 71-1 / 71-2, which are disposed opposite to each other on both sides of each magnetic post 40-1 / 40-2, are directly connected to the first trace portion 221-1 / 221-2 on the fourth conductive layer 22, and are connected to the first end and the second end of the first trace portion 241-1 / 241-2 disposed near the magnetic post 40-1 / 40-2 through blind holes, so as to form a part of the winding of the magnetic element 100-4, for example, forming a part of the first sub-winding CS1-1 and a part of CS1-2.

[0224] The third wiring region 70 further includes two spaced-apart tenth conductive layers 71-3 and 71-4, both disposed along the first direction F1, wherein the two tenth conductive layers 71-3 and 71-4 are located between the two ninth conductive layers 71-1 and 71-2. The third conductive layer 21 also has two second trace portions 212-1 and 212-2, which are spaced apart from the first ends of each of the first trace portions 211-1 / 211-2 of the third conductive layer 21, and each of the second trace portions 212-1 / 212-2 of the third conductive layer 21 is directly connected to a second conductive layer 12, and is connected to the first ends of the first trace portions 231-1 and 231-2 of the inner sixth conductive layer 23 disposed in the corresponding accommodating spaces 30-1 and 30-2 through blind holes, to form a partial winding of the magnetic element 100-4, for example, forming a part of the second sub-winding CS2-1 and a part of CS2-2. The third conductive layer 21 also has two third trace portions 213-1 and 213-2, which are spaced apart from the second ends of each of the first trace portions 211-1 / 211-2 of the third conductive layer 21, and each of the third trace portions 213-1 / 213-2 of the third conductive layer 21 is directly connected to a tenth conductive layer 71-3 / 71-4 to form a portion of the winding of the magnetic element 100-4, for example, forming a portion of the second sub-winding CS2-1 and a portion of CS2-2. The inner fifth conductive layer 24 also has two second trace portions 242-1 and two second trace portions 242-2, which are respectively disposed corresponding to the accommodating spaces 30-1 and 30-2. The second conductive layer 12 and the tenth conductive layer 71-3 / 71-4, which are disposed opposite to each magnetic post 40-1 / 40-2, are directly connected to the second trace portion 222-1 / 222-2 on the fourth conductive layer 22, and are connected to the second trace portion 242-1 / 242-2 disposed on the inner fifth conductive layer 24 corresponding to the magnetic post 40-1 / 40-2 through blind holes. They are further connected to the first end and the second end of the first trace portion 261-1, 261-2 disposed on the outer fifth conductive layer 26 disposed on the corresponding accommodating spaces 30-1 and 30-2 through blind holes, so as to form a part of the winding of the magnetic element 100-4, for example, forming a part of the second sub-winding CS2-1 and a part of CS2-2.

[0225] The third wiring area 70 further includes an eleventh conductive layer 71-5, which is disposed along the first direction F1, wherein the eleventh conductive layer 71-5 is located between the two tenth conductive layers 71-3 and 71-4. The third conductive layer 21 also has a fourth trace portion 214, located between the two third trace portions 213-1 and 213-2 of the third conductive layer 21, and spaced apart from the two third trace portions 213-1 and 213-2. The fourth trace portion 214 of the third conductive layer 21 is directly connected to the eleventh conductive layer 71-5. The fourth trace portion 214 of the third conductive layer 21 is also connected to the second trace portion 234 of the inner sixth conductive layer 23 through a blind hole, and further connected to the outer sixth conductive layer 25 (including the first trace portions 251-1 and 251-2 corresponding to the magnetic pillars 40-1 and 40-2 respectively) through a blind hole, for forming a portion of the winding of the magnetic element 100-4, for example, forming a portion of the third sub-winding CS3-1 and a portion of CS3-2. The inner fifth conductive layer 24 also has a third trace portion 243, located between the second trace portions 242-1 and 242-2 of the inner fifth conductive layer 24, and spaced apart from the second trace portions 242-1 and 242-2. The third trace portion 243 of the inner fifth conductive layer 24 is connected to the third trace portion 223 of the fourth conductive layer 22 through a blind hole. The third trace portion 223 of the fourth conductive layer 22 is directly connected to the eleventh conductive layer 71-5, and the third trace portion 243 of the inner fifth conductive layer 24 is further connected to the second trace portion 263 of the outer fifth conductive layer 26 through a blind hole, and further connected to the second outer fifth conductive layer 28 (including the first trace portions 281-1 and 281-2 corresponding to the magnetic pillars 40-1 and 40-2 respectively) through a blind hole, for forming a portion of the winding of the magnetic element 100-4, for example, forming a portion of the third sub-winding CS3-1 and a portion of CS3-2. The eleventh conductive layer 71-5 is a common winding portion used to form the two third sub-windings CS3-1 and CS3-2 located on the outermost layer.

[0226] Preferably, the third wiring area 70 may be formed by a second subcarrier SCP3, on which the two ninth conductive layers 71-1 and 71-2, the two tenth conductive layers 71-3 and 71-4, and the eleventh conductive layer 71-5 are disposed.

[0227] In this embodiment, the two tenth conductive layers 71-3 and 71-4 of the second subcarrier SCP3 are respectively connected to the corresponding second trace portions 222-1 and 222-2 on the fourth conductive layer 22, and are respectively connected to the corresponding metal wiring layers of the magnetic element (e.g., including the outer fifth conductive layer 26 and the inner sixth conductive layer 23) through blind vias; the eleventh conductive layer 71-5 of the second subcarrier SCP3 is respectively connected to the corresponding trace portion 223 on the fourth conductive layer 22, and is respectively connected to the corresponding metal wiring layers of the magnetic element (e.g., including the outer fifth conductive layer 26, the second outer fifth conductive layer 28, the inner sixth conductive layer 23, and the outer sixth conductive layer 25) through blind vias.

[0228] As described in the preceding embodiments, replacing the through-hole structure in the existing solution with the two ninth conductive layers 71-1 and 71-2 of the second subcarrier board effectively reduces the width of the magnetic components. The two tenth conductive layers 71-3 and 71-4 and the eleventh conductive layer 71-5 are connected by blind vias. According to the PCB manufacturing process, the width occupied by the blind vias is smaller than that occupied by the through-holes, so the width of the magnetic components can be further reduced.

[0229] In this embodiment, the two magnetic pillars 40-1 and 40-2 can be connected end to end to form a closed magnetic circuit.

[0230] Fifth Embodiment

[0231] like Figure 15 The diagram illustrates the structure of a magnetic element 100-5 according to a fifth preferred embodiment of the present invention. The difference from the previous embodiments lies in that the winding of the magnetic element 100-5 comprises multiple layers of sub-windings, sequentially wound from the inside out along the circumference of each magnetic post 40-1 / 40-2. For example, it forms the innermost third sub-windings CS3-1 and CS3-2, the middle first sub-windings CS1-1 and CS1-2, and the outermost second sub-windings CS2-1 and CS2-2. The magnetic element 100-5 shown in this embodiment... Figure 14The difference in the magnetic element 100-4 shown is that: First, inner wall conductive layers 301-1 and 301-2 are laid on the inner walls of the two accommodating spaces 30-1 and 30-2 near the two first conductive layers 11, the third conductive layer 21, and the two ninth conductive layers 72-1 and 72-2. The inner wall conductive layers 301-1 and 301-2 are directly connected to the four traces 29a1 of the seventh conductive layer 29a. The four traces 29a1 of the seventh conductive layer 29a are then connected to the two first traces 29b1-1 and 29b1-2 of the eighth conductive layer 29b through four blind holes 29b11 respectively. The first part of the winding is connected to the end to form a portion of the winding of the magnetic element 100-5, for example, to form the innermost third sub-winding CS3-1 and CS3-2. Secondly, the two ninth conductive layers 72-1 and 72-2 on the second subcarrier SCP5 located between the two magnetic pillars 40-1 and 40-2 are directly contacted and connected to one end of the first trace portion 211-1 and 211-2 of the third conductive layer 21 located below the two magnetic pillars 40-1 and 40-2, and one end of the first trace portion 221-1 and 221-2 of the fourth conductive layer 22 located above the two magnetic pillars 40-1 and 40-2. Furthermore, the third wiring area 70 also includes a through-hole V7 located between the two ninth conductive layers 72-1 and 72-2 on the second subcarrier SCP5, and the sidewall of the through-hole V7 has a sidewall conductive layer V72 for forming a common winding portion of the two outermost second sub-windings CS2-1 and CS2-2.

[0232] Compared to Figure 14 The two tenth conductive layers 71-3 and 71-4 on the second subcarrier plate SCP3 located between the two magnetic pillars 40-1 and 40-2 are connected by blind holes. Compared with the fourth embodiment, this fifth embodiment can further reduce the width of the magnetic element. At this time, the third sub-windings CS3-1 and CS3-2 can be disposed on the inner wall of the accommodating spaces 30-1 and 30-2 (i.e., have inner wall conductive layers 301-1 and 301-2), and can be connected to the corresponding first traces 29b1-1 and 29b1-2 of the corresponding eighth conductive layer 29b through blind holes.

[0233] In this embodiment, the first subcarrier SCP2 located to the right of the magnetic column 40-2 and the first subcarrier SCP1 located to the left of the magnetic column 40-1 can both be configured to have a structure similar to the second subcarrier SCP5 during continuous production. However, the final board separation process will divide the second subcarrier SCP5 to form the first subcarrier SCP1 and SCP2 described in this embodiment.

[0234] For the magnetic elements in the fourth and fifth embodiments, when manufacturing the magnetic element, the magnetic element further includes a second subcarrier plate, the number of first subcarrier plates is two, the number of first receiving slots is two, the number of first wiring areas is two, the number of magnetic pillars is two, the two magnetic pillars that are spaced apart are both located between the two first wiring areas, and the second subcarrier plate is located between the two magnetic pillars.

[0235] Furthermore, step S1 further includes: milling a groove in the first component to form a third receiving groove, the third receiving groove being used to accommodate the second sub-carrier board to form a third wiring area, wherein the third wiring area includes two ninth conductive layers, respectively located on both sides of the third wiring area, and each magnetic post is located between one layer of the ninth conductive layer and one layer of the first conductive layer.

[0236] Step S3 further includes: performing a method, such as but not limited to, brushing on the lower surface of the second component to expose the lower end face of the ninth conductive layer.

[0237] Step S4 further includes: disconnecting the third conductive layer by an etching process to form two first trace portions of the third conductive layer, wherein one end of each first trace portion of the third conductive layer is directly connected to a first conductive layer and the other end is directly connected to a ninth conductive layer.

[0238] This invention can effectively improve the power density of the power module, thus achieving a smaller footprint, and improve the conversion efficiency of the power module, thus achieving lower power loss.

[0239] Exemplary embodiments of the present invention have been specifically illustrated and described above. It should be understood that the present invention is not limited to the disclosed embodiments; rather, the present invention is intended to cover various modifications and equivalent arrangements contained within the spirit and scope of the appended claims.

Claims

1. A magnetic element, characterized in that, include: The first wiring area includes a first conductive layer and a second conductive layer, both of which are disposed along a first direction; The second wiring region includes a third conductive layer and a fourth conductive layer, both of which are disposed along a second direction perpendicular to the first direction. The third conductive layer and the fourth conductive layer are respectively located on opposite sides of the second wiring region. A first subcarrier board is used to form the first conductive layer and the second conductive layer in the first wiring region; An accommodating space is located between the third conductive layer and the fourth conductive layer, with the first conductive layer and the third conductive layer disposed close to the accommodating space, and the second conductive layer located on the side of the first conductive layer away from the accommodating space; as well as A magnetic column is disposed within the accommodating space; The third conductive layer has a first trace portion, one end of which is directly connected to the first conductive layer to form a portion of the winding of the magnetic element.

2. The magnetic element according to claim 1, characterized in that, The third conductive layer further has a second trace portion, located at one end of the first trace portion of the third conductive layer, and spaced apart from the first trace portion of the third conductive layer; The second trace portion of the third conductive layer is directly connected to the second conductive layer to form a portion of the winding of the magnetic element.

3. The magnetic element according to claim 1, characterized in that, The fourth conductive layer has a first trace portion, one end of which is directly connected to the first conductive layer to form a portion of the winding of the magnetic element.

4. The magnetic element according to claim 3, characterized in that, The fourth conductive layer also has a second trace portion, located at one end of the first trace portion of the fourth conductive layer, and spaced apart from the first trace portion of the fourth conductive layer; The second trace portion of the fourth conductive layer is directly connected to the second conductive layer to form a portion of the winding of the magnetic element.

5. The magnetic element according to claim 3, characterized in that, The second wiring area further includes at least one fifth conductive layer located on the side of the fourth conductive layer away from the third conductive layer. One of the at least one fifth conductive layer is connected to the fourth conductive layer through a blind via to form a portion of the winding of the magnetic element.

6. The magnetic element according to claim 1, characterized in that, The fourth conductive layer has a first trace portion, one end of which is connected to the first conductive layer through a blind via to form a portion of the winding of the magnetic element.

7. The magnetic element according to claim 6, characterized in that, The fourth conductive layer also has a second trace portion, located at one end of the first trace portion of the fourth conductive layer, and spaced apart from the first trace portion of the fourth conductive layer; The second trace portion of the fourth conductive layer is connected to the second conductive layer through a blind via to form a portion of the winding of the magnetic element.

8. The magnetic element according to claim 1, characterized in that, The second wiring area further includes at least one sixth conductive layer located on the side of the third conductive layer away from the fourth conductive layer, and one of the at least one sixth conductive layer is connected to the second conductive layer through a blind via to form a portion of the winding of the magnetic element.

9. The magnetic element according to claim 5, characterized in that, The at least one fifth conductive layer includes an inner fifth conductive layer and at least one outer fifth conductive layer, wherein the at least one outer fifth conductive layer is located on the side of the inner fifth conductive layer away from the fourth conductive layer; The inner fifth conductive layer is connected to the fourth conductive layer through a blind hole to form a portion of the winding of the magnetic element.

10. The magnetic element of claim 9, wherein one of the at least one outer fifth conductive layer is connected to the second conductive layer via a blind via to form a portion of the winding of the magnetic element.

11. The magnetic element according to claim 6, characterized in that, The second wiring area further includes at least one fifth conductive layer located on the side of the fourth conductive layer away from the third conductive layer, and one of the at least one fifth conductive layer is connected to the second conductive layer through a blind via to form a portion of the winding of the magnetic element.

12. The magnetic element according to claim 1, characterized in that, The magnetic element includes two first wiring regions, and each end of the first trace portion of the third conductive layer is directly connected to a layer of the first conductive layer to form a partial winding of the magnetic element.

13. The magnetic element according to claim 12, characterized in that, The third conductive layer further comprises two second trace portions, respectively located at both ends of the first trace portion of the third conductive layer, and both spaced apart from the first trace portion of the third conductive layer; and Each of the second trace portions of the third conductive layer is directly connected to a second conductive layer to form a portion of the winding of the magnetic element.

14. The magnetic element according to claim 1, characterized in that, The accommodating space is provided with an inner wall conductive layer on the inner wall near the first conductive layer and the third conductive layer, which is used to form part of the winding of the magnetic element.

15. The magnetic element according to claim 14, characterized in that, The second wiring area also has a seventh conductive layer and an eighth conductive layer, both of which are located between the fourth conductive layer and the magnetic pillar, with the eighth conductive layer located on the side of the seventh conductive layer away from the magnetic pillar; The seventh conductive layer is connected to the eighth conductive layer through a blind via, and the seventh conductive layer is directly connected to the inner wall conductive layer to form part of the winding of the magnetic element.

16. The magnetic element according to claim 1, characterized in that, The magnetic element includes two first wiring regions, one second wiring region, two spaced-apart accommodating spaces, two magnetic pillars, and a third wiring region. The two accommodating spaces are located between the two first wiring regions, and the third wiring region is located between the two accommodating spaces. Each accommodating space contains one magnetic pillar. The third wiring region includes two ninth conductive layers, both arranged along the first direction and located on opposite sides of the third wiring region. The third conductive layer has two first trace portions, each disposed close to one of the accommodating spaces; The first conductive layer and the ninth conductive layer, which are disposed opposite to each of the magnetic pillars, respectively directly contact the first end and the second end of the first trace portion of the third conductive layer near the magnetic pillar, in order to form a partial winding of the magnetic element.

17. The magnetic element according to claim 16, characterized in that, The third wiring area also includes vias located between the two ninth conductive layers; The winding of the magnetic element includes multiple layers of sub-windings, which are wound sequentially from the inside to the outside along the circumference of each magnetic post, wherein the two outermost sub-windings are located at the outermost edges away from the two magnetic posts. The sidewall of the through hole is used to form a common winding section for the two outermost sub-windings.

18. The magnetic element according to claim 16, characterized in that, The third wiring area also includes two tenth conductive layers and one eleventh conductive layer spaced apart, all arranged along the first direction, wherein the two tenth conductive layers are located between the two ninth conductive layers, and the eleventh conductive layer is located between the two tenth conductive layers.

19. The magnetic element according to claim 18, characterized in that, The third conductive layer also has two second traces, which are spaced apart from the first ends of each of the first traces of the third conductive layer, and each of the second traces of the third conductive layer is directly connected to a second conductive layer to form a partial winding of the magnetic element.

20. The magnetic element according to claim 19, characterized in that, The third conductive layer also has two third traces, which are spaced apart from the second ends of each of the first traces of the third conductive layer, and each of the third traces of the third conductive layer is directly connected to a tenth conductive layer to form a partial winding of the magnetic element.

21. The magnetic element according to claim 20, characterized in that, The third conductive layer also has a fourth trace portion located between the two third trace portions of the third conductive layer and spaced apart from the third trace portions of the third conductive layer. The fourth trace portion of the third conductive layer is directly connected to the eleventh conductive layer to form a portion of the winding of the magnetic element.

22. The magnetic element according to claim 21, characterized in that, The winding of the magnetic element includes multiple layers of sub-windings, which are wound sequentially from the inside to the outside along the circumference of each magnetic post, wherein the two outermost sub-windings are located at the outermost edges away from the two magnetic posts. The eleventh conductive layer is used to form the common winding section of the two outermost sub-windings.

23. The magnetic element according to claim 1, characterized in that, The winding of the magnetic element is located on the outermost part of the magnetic element and is prepared by a plate-edge metallization process.

24. The magnetic element according to claim 1, characterized in that, The winding of the magnetic element includes multiple sub-windings, with at least three layers of the sub-windings wound sequentially from the inside to the outside along the circumference of each magnetic post, wherein one of the two sub-windings closest to each magnetic post is used to form the primary side sub-winding of the magnetic element.

25. The magnetic element according to claim 16, characterized in that, The magnetic element also includes a second subcarrier plate, which is used to form the third wiring area.

26. A method for manufacturing a magnetic element, the magnetic element comprising a first assembly, a first subcarrier plate, and a magnetic pillar, characterized in that, The method for manufacturing the magnetic element includes the following steps: Step S1: A first receiving groove is formed on the first component. The first receiving groove is used to receive the first subcarrier board to form a first wiring area. The first wiring area includes a first conductive layer and a second conductive layer formed by the first subcarrier board. Step S2: A first dielectric layer is formed on the upper surface of the first component, and a second dielectric layer is formed on the lower surface of the first component. The first dielectric layer, the second dielectric layer, and the first component form a second component. Step S3: Expose the lower end faces of the first conductive layer and the second conductive layer; Step S4: A third conductive layer is formed on the lower surface of the second component. One end of the first trace portion of the third conductive layer is directly connected to the first conductive layer to form a partial winding of the magnetic element.

27. The method for manufacturing a magnetic element according to claim 26, characterized in that, In step S3, the lower surface of the second component is brushed to expose the lower end faces of the first conductive layer and the second conductive layer.

28. The method for manufacturing a magnetic element according to claim 26, characterized in that, Step S4 also includes: A first blind via is formed on the second component, and the first blind via is connected to the first conductive layer; A fourth conductive layer is formed on the upper surface of the second component, and one end of the first trace portion of the fourth conductive layer is connected to the first conductive layer through the first blind hole to form a portion of the winding of the magnetic element.

29. The method for manufacturing a magnetic element according to claim 26, characterized in that, Step S4 also includes: The third conductive layer is disconnected to form a second trace portion of the third conductive layer, which is directly connected to the second conductive layer to form a portion of the winding of the magnetic element.

30. The method for manufacturing a magnetic element according to claim 29, characterized in that, Step S3 also includes: Exposing the upper surface of the first conductive layer and the upper surface of the second conductive layer; and Step S4 also includes: A fourth conductive layer is formed on the upper surface of the second component, and the fourth conductive layer is disconnected to form a first trace portion and a second trace portion of the fourth conductive layer; Wherein, one end of the first trace portion of the fourth conductive layer is directly connected to the first conductive layer; and The second trace portion of the fourth conductive layer is directly connected to the second conductive layer to form a portion of the winding of the magnetic element.

31. The method for manufacturing a magnetic element according to claim 30, characterized in that, After step S4, the method for manufacturing the magnetic element further includes the following steps: Step S5: A third dielectric layer is formed on the lower surface of the third conductive layer, and a fourth dielectric layer is formed on the upper surface of the fourth conductive layer. The third dielectric layer, the fourth dielectric layer, and the second component are integrated and defined as the third component. Step S6: Form second blind vias in the third dielectric layer and the fourth dielectric layer respectively. The second blind via in the third dielectric layer is connected to the second trace portion of the third conductive layer, and the second blind via in the fourth dielectric layer is connected to the second trace portion of the fourth conductive layer. Step S7: An inner fifth conductive layer is formed on the upper surface of the third component and an inner sixth conductive layer is formed on the lower surface of the third component. The inner fifth conductive layer is connected to the second trace portion of the fourth conductive layer through the second blind via in the fourth dielectric layer. The inner sixth conductive layer is connected to the second trace portion of the third conductive layer through the second blind via in the third dielectric layer. Step S8: Form the portion of the winding of the magnetic element located outside the magnetic element.

32. The method for manufacturing a magnetic element according to claim 26, characterized in that, Before step S1, the method for manufacturing the magnetic element further includes the following steps: Step S01: Provide a core board, form a second receiving groove on the core board, and install the magnetic column in the second receiving groove; Step S02: An upper dielectric layer is formed on the upper surface of the core board, and a lower dielectric layer is formed on the lower surface of the core board. The upper dielectric layer and the lower dielectric layer together with the core board form the first component.

33. The method for manufacturing a magnetic element according to claim 32, characterized in that, In step S01, the outer surface of the magnetic post has a coating.

34. The method for manufacturing a magnetic element according to claim 31, characterized in that, Before step S1, the method for manufacturing the magnetic element further includes the following steps: Step S01: Provide a core board, form a second receiving groove on the core board, and install a gasket in the second receiving groove; Step S02: An upper dielectric layer is formed on the upper surface of the core board, and a lower dielectric layer is formed on the lower surface of the core board, wherein the upper dielectric layer and the lower dielectric layer together with the core board form the first assembly; and After step S8, the method for manufacturing the magnetic element further includes the following steps: Step S9: Remove the gasket from the second receiving groove to form a receiving space; Step S10: Install the magnetic column within the accommodating space.

35. The method for manufacturing a magnetic element according to claim 30, characterized in that, The first component is a core board; Two first receiving slots are formed on both sides of the first component, and two first subcarrier boards are respectively disposed in the two first receiving slots to form two first wiring areas. Wherein, both ends of the first trace portion of the third conductive layer are directly connected to the first conductive layer. The third conductive layer also has two second trace portions, which are spaced apart at both ends of the first trace portion of the third conductive layer, and each second trace portion of the third conductive layer is directly connected to a second conductive layer. Both ends of the first trace portion of the fourth conductive layer are directly connected to a first conductive layer; and The fourth conductive layer also has two second trace portions, which are spaced apart at both ends of the first trace portion of the fourth conductive layer. Each second trace portion of the fourth conductive layer is directly connected to a second conductive layer to form a partial winding of the magnetic element.

36. The method for manufacturing a magnetic element according to claim 35, characterized in that, After step S4, the method for manufacturing the magnetic element further includes the following steps: Step S5: Form a second receiving groove in the middle of the second component; Step S6: Provide a cover plate and place it above the second component. The lower surface of the cover plate and the second receiving groove form a receiving space. Step S7: Form two first blind holes and two second blind holes on the cover plate. Each first blind hole on the cover plate is connected to a first trace portion of the fourth conductive layer, and each second blind hole on the cover plate is connected to a second trace portion of the fourth conductive layer. Step S8: Form an inner fifth conductive layer on the upper surface of the cover plate, and disconnect the inner fifth conductive layer so that the inner fifth conductive layer has a first trace portion and two second trace portions; Wherein, each end of the first trace portion of the inner fifth conductive layer is connected to a first trace portion of the fourth conductive layer through a first blind via; and Each of the second trace portions of the inner fifth conductive layer is connected to a second trace portion of the fourth conductive layer through a second blind via, in order to form a partial winding of the magnetic element.

37. The method for manufacturing a magnetic element according to claim 36, characterized in that, After step S8, the method for manufacturing the magnetic element further includes the following steps: Step S9: A third dielectric layer is formed on the lower surface of the third conductive layer, and a fourth dielectric layer is formed on the upper surface of the inner fifth conductive layer. The third dielectric layer, the fourth dielectric layer, the cover plate, and the second component are integrated and defined as the third component. Step S10: Form two third blind vias on the third dielectric layer and two fourth blind vias on the fourth dielectric layer. Each third blind via is connected to a second trace portion of the third conductive layer, and each fourth blind via is connected to a second trace portion of the inner fifth conductive layer. Step S11: An inner sixth conductive layer is formed on the lower surface of the third dielectric layer and an outer fifth conductive layer is formed on the upper surface of the fourth dielectric layer; Wherein, each end of the inner sixth conductive layer is connected to a second trace portion of the third conductive layer through a third blind hole, and each end of the outer fifth conductive layer is connected to a second trace portion of the inner fifth conductive layer through a fourth blind hole; Step S12: Form the portion of the winding of the magnetic element located on the outside of the magnetic element; Step S13: Install the magnetic column within the accommodating space.

38. The method for manufacturing a magnetic element according to claim 26, characterized in that, The portion of the magnetic element other than the first subcarrier plate forms a second wiring area.

39. The method for manufacturing a magnetic element according to claim 38, characterized in that, The magnetic element further includes a second subcarrier plate, and the number of the first subcarrier plates is two, the number of the first receiving slots is two, the number of the first wiring areas is two, the number of the magnetic pillars is two, and the two magnetic pillars that are spaced apart are both located between the two first wiring areas, and the second subcarrier plate is located between the two magnetic pillars. Step S1 also includes the following steps: A third receiving groove is formed on the first component, the third receiving groove being used to receive the second sub-carrier board to form a third wiring area, wherein the third wiring area includes two ninth conductive layers located on both sides of the third wiring area, and each magnetic pillar is located between one of the ninth conductive layers and one of the first conductive layers; Step S3 also includes the following steps: Exposing the lower end face of the ninth conductive layer; and Step S4 also includes the following steps: The third conductive layer is disconnected to form two first trace portions of the third conductive layer. One end of each first trace portion of the third conductive layer is directly connected to a first conductive layer, and the other end is directly connected to a ninth conductive layer.

40. A carrier plate, characterized in that, The carrier plate includes: The first wiring area includes a first conductive layer and a second conductive layer, both of which are disposed along a first direction; The second wiring region includes a third conductive layer and a fourth conductive layer, both disposed along a second direction perpendicular to the first direction, wherein the third conductive layer and the fourth conductive layer are located on opposite sides of the second wiring region; and A first subcarrier board is used to form the first conductive layer and the second conductive layer in the first wiring region; In this configuration, along the first direction, the first conductive layer and the second conductive layer are located between the third conductive layer and the fourth conductive layer, and there is an accommodating space between the third conductive layer and the fourth conductive layer. The first conductive layer and the third conductive layer are disposed close to the accommodating space, and the second conductive layer is located on the side of the first conductive layer away from the accommodating space. The third conductive layer has a first trace portion, and one end of the first trace portion of the third conductive layer is directly connected to the first conductive layer.

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