Electronic load device and electronic load apparatus

Abstract

The application discloses an electronic load device and an electronic load equipment, wherein a substrate is provided with a conductive circuit; a field effect transistor is fixed to one side of the substrate and electrically connected with the conductive circuit; a metal piece is fixed to the side of the field effect transistor away from the substrate; a plurality of functional devices are fixed to one side of the substrate and electrically connected with the conductive circuit through wire bonding; and a plastic encapsulation layer is arranged on one side of the substrate and wraps the field effect transistor, the functional devices and at least part of the metal piece. In this way, the volume of the electronic load device can be reduced.

Description

Technical Field

[0001] This invention applies to the technical field of electronic loads, particularly electronic load devices and electronic load equipment. Background Technology

[0002] With the continuous advancement of semiconductor technology, chips and components in various electronic devices are becoming more functional, faster, and smaller. Therefore, simplified design and the development of digital, modular, and miniaturized electronic devices are inevitable trends.

[0003] Electronic loads can simulate loads (electrical appliances) in a real environment. Manufacturers with strict product requirements generally use electronic loads to test the quality of their products.

[0004] Traditional electronic load solutions employ board-level design, resulting in large size and long development cycles. Summary of the Invention

[0005] This invention provides an electronic load device and an electronic load equipment to solve the problems of large size and long development cycle of electronic loads.

[0006] To address the aforementioned technical problems, the present invention provides an electronic load device, comprising: a substrate on which conductive lines are formed; a field-effect transistor (FET) fixed to one side of the substrate and electrically connected to the conductive lines; a metal component fixed to the side of the FET away from the substrate; multiple functional devices fixed to one side of the substrate and electrically connected to the conductive lines via wire bonding; and a molding compound layer bonded to one side of the substrate and encapsulating the FET, the functional devices, and at least a portion of the metal component.

[0007] The field-effect transistor is welded and fixed to the conductive lines on one side of the substrate.

[0008] The plastic encapsulation layer encapsulates the field-effect transistor, various functional devices, and metal components.

[0009] The molding compound encapsulates the sides of the field-effect transistor, various functional devices, and metal components. The side of the metal components furthest from the field-effect transistor is flush with the side of the molding compound furthest from the substrate, thus exposing them to the outside of the substrate.

[0010] The metal component is electrically connected to the field-effect transistor.

[0011] The molding compound encapsulates the field-effect transistor, various functional devices, and some metal components. One end of the metal component is fixed and electrically connected to the side of the field-effect transistor away from the substrate, while the other end of the metal component is exposed outside the molding compound and extends along the surface of the molding compound to the substrate.

[0012] In this configuration, the gate and source of the field-effect transistor are electrically connected to the conductive circuit; the drain of the field-effect transistor is electrically connected to the metal component.

[0013] The various functional devices include: a controller, a first digital-to-analog converter, a comparator, a sampler, an amplifier, and a second digital-to-analog converter; a field-effect transistor is electrically connected to the sampler, the sampler is electrically connected to the amplifier, the amplifier is electrically connected to the first digital-to-analog converter and the comparator respectively; the comparator is electrically connected to the field-effect transistor; the first digital-to-analog converter is electrically connected to the controller, the controller is electrically connected to the second digital-to-analog converter, and the second digital-to-analog converter is electrically connected to the comparator.

[0014] In this configuration, the drain of the field-effect transistor is electrically connected to the target object, the gate of the field-effect transistor is electrically connected to the comparator, and the source of the field-effect transistor is electrically connected to the sampler, which is used to electrically connect to the target object through the sampler.

[0015] To solve the above-mentioned technical problems, the present invention also provides an electronic load device, which includes multiple electronic load devices, wherein the electronic load devices include any of the above-mentioned electronic load devices; the multiple electronic load devices are connected in parallel.

[0016] To address the aforementioned technical problems, the electronic load device of the present invention places a field-effect transistor, a metal component, and various functional devices on the same side of a substrate. This allows for the realization of the required electrical connections using conductive lines on the substrate. Furthermore, the devices are encapsulated using a molding compound, thereby reducing the size of the electronic load device and achieving miniaturization and portability. In this embodiment, a metal component is also placed on the side of the field-effect transistor away from the substrate. This metal component provides heat dissipation for the field-effect transistor and the electronic load device, thereby improving the lifespan and reliability of the electronic load device. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of an embodiment of the electronic load device provided by the present invention;

[0018] Figure 2 This is a schematic diagram of another embodiment of the electronic load device provided by the present invention;

[0019] Figure 3 This is a schematic diagram of another embodiment of the electronic load device provided by the present invention;

[0020] Figure 4 This is a schematic diagram of the circuit structure of an embodiment of the electronic load device provided by the present invention;

[0021] Figure 5 This is a schematic diagram of the bottom structure of an embodiment of the electronic load device provided by the present invention;

[0022] Figure 6 This is a schematic diagram of an embodiment of the electronic load device provided by the present invention. Detailed Implementation

[0023] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0024] It should be noted that if the embodiments of the present invention involve directional indicators (such as up, down, left, right, front, back, etc.), the directional indicators are only used to explain the relative positional relationship and movement of the components in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indicators will also change accordingly.

[0025] Furthermore, if the embodiments of this invention involve descriptions such as "first" or "second," these descriptions are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. If the combination of technical solutions is contradictory or impossible to implement, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed by this invention.

[0026] Please see Figure 1 , Figure 1 This is a schematic diagram of an embodiment of the electronic load device provided by the present invention.

[0027] The electronic load device 100 of this embodiment includes a substrate 110, a field-effect transistor 120, a metal part 140, a multifunctional device 150, and a molding compound 130.

[0028] Conductive lines (not shown) are formed on substrate 110. In one specific application, substrate 110 may include a printed circuit board on which conductive lines are formed. In another specific application, substrate 110 may also include a dielectric substrate on which conductive lines are formed. No limitation is made here. The conductive lines may include one or more conductive materials such as copper, iron, silver, aluminum, tungsten, and alloys.

[0029] The field-effect transistor 120 is fixed to one side of the substrate 110 and electrically connected to the conductive lines on the substrate 110. The field-effect transistor 120 in this embodiment may include a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) or a junction FET (JFET), etc., and is not limited thereto.

[0030] A metal component 140 is fixed to the side of the field-effect transistor 120 away from the substrate 110. The metal component 140 may include one or more heat dissipation materials such as copper, iron, silver, aluminum, tungsten, and alloys. By mounting the metal component 140 on the side of the field-effect transistor 120 away from the substrate 110, heat dissipation can be achieved for both the field-effect transistor 120 and the electronic load device 100, thereby improving the lifespan and reliability of the electronic load device 100.

[0031] Each functional device 150 is fixed to one side of the substrate 110, that is, disposed on the same side of the substrate 110 as the field-effect transistor 120, and electrically connected to the conductive lines on the substrate 110 by wire bonding. This achieves electrical connection with the field-effect transistor 120. The field-effect transistor 120 and the various functional devices 150 are spaced apart to avoid short circuits.

[0032] Each functional device 150 may include electronic devices such as controllers, digital-to-analog converters, comparators, samplers, amplifiers, resistors, and capacitors, and the specific configuration can be based on load requirements.

[0033] The molding compound 130 is bonded to one side of the substrate 110 and encapsulates the field-effect transistor 120, various functional devices 150, and at least a portion of the metal components 140. In one specific application scenario, the molding compound 130 may encapsulate all of the metal components 140. In another specific application scenario, the molding compound 130 may expose one side or part of the structure of the metal components 140. The specific configuration can be determined based on actual requirements.

[0034] The molding layer 130 may specifically include one or more of the following dielectric layers: epoxy resin, polyimide, bismaleimide triazine (BT), ceramic matrix, etc.

[0035] In this embodiment, the devices used to realize the electronic load function include a field-effect transistor 120, a metal part 140, and various functional devices 150. By mounting the above devices on the substrate 110 and encapsulating the above devices with a plastic encapsulation layer, the volume of the electronic load device 100 can be reduced.

[0036] With the above structure, the electronic load device of this embodiment places the field-effect transistor, metal component, and various functional devices on the same side of the substrate to achieve the required electrical connections using conductive lines on the substrate. Furthermore, by encapsulating these devices with a molding compound, the size of the electronic load device can be reduced, achieving miniaturization and portability. In addition, this embodiment also places a metal component on the side of the field-effect transistor away from the substrate to dissipate heat from the field-effect transistor and the electronic load device, thereby improving the lifespan and reliability of the electronic load device.

[0037] In other embodiments, the field-effect transistor 120 is welded and fixed to the conductive lines on one side of the substrate 110, thereby achieving both the fixed installation between the field-effect transistor 120 and the substrate 110 and the electrical connection between the field-effect transistor 120 and the conductive lines on one side of the substrate 110.

[0038] In a specific application scenario, the conductive lines on the substrate 110 may include pads and lines, and the field-effect transistor 120 may be soldered to the pads for fixed connection.

[0039] In other embodiments, the molding compound 130 encapsulates the field-effect transistor 120, the various functional devices 150, and the metal component 140. That is, the molding compound 130 can completely encapsulate the above-mentioned devices, thereby providing all-round protection for the devices and improving the structural stability and reliability of the electronic load device 100.

[0040] In other embodiments, the thickness of the substrate 110 can be 0.5-1.0 mm, specifically 0.5 mm, 0.6 mm, 0.8 mm, 0.9 mm or 1.0 mm, etc., and is not limited here.

[0041] In other embodiments, the molding compound may encapsulate the sides of the field-effect transistor, the functional devices, and the metal components.

[0042] Please see Figure 2 , Figure 2 This is a schematic diagram of another embodiment of the electronic load device provided by the present invention.

[0043] The positional and structural relationships between the substrate 210, the field-effect transistor 220, and the various functional devices 250 in this embodiment are the same as those in the previous embodiment. Please refer to the previous text for further details.

[0044] In this embodiment, the molding compound 230 encapsulates the sides of the field-effect transistor 220, each functional device 250, and the metal component 240. The side of the metal component 240 away from the field-effect transistor 220 is flush with the side of the molding compound 230 away from the substrate 210, while the side of the metal component 240 away from the field-effect transistor 220 is exposed outside the molding compound 230. This increases the heat dissipation area of ​​the exposed metal component 240, thereby improving its heat dissipation capacity and efficiency, and further enhancing the lifespan and reliability of the field-effect transistor 220 and the electronic load device 200.

[0045] In other embodiments, the metal component 240 is electrically connected to the field-effect transistor 220. The metal component 240 not only dissipates heat from the field-effect transistor 220 but also allows the signal from the field-effect transistor 220 to be output, thus enabling its electrical function.

[0046] In other embodiments, the gate and source of the field-effect transistor 220 can be electrically connected to the conductive lines on the substrate 210 by soldering, and the drain of the field-effect transistor 220 is electrically connected to the metal part 240, thereby realizing the function of the field-effect transistor 220.

[0047] The connection between the field-effect transistor 220 and the metal part 240 can be fixed by means of welding, conductive adhesive bonding, etc., and there is no limitation here.

[0048] In other embodiments, each functional device 250 and field-effect transistor 220 is fixedly connected to the substrate 210 in a wafer manner, thereby further reducing the size of the electronic load device 200 by using bare devices.

[0049] In other embodiments, the molding compound may encapsulate the field-effect transistor, various functional devices, and some metal components.

[0050] Please see Figure 3 , Figure 3 This is a schematic diagram of another embodiment of the electronic load device provided by the present invention.

[0051] The positional and structural relationships between the substrate 310, the field-effect transistor 320, and the various functional devices 350 in this embodiment are the same as those in the previous embodiment. Please refer to the previous text for further details.

[0052] In this embodiment, the molding layer 330 can encapsulate the field-effect transistor 320, various functional devices 350, and some metal parts 340.

[0053] One end of the metal part 340 is fixed and electrically connected to the side of the field-effect transistor 320 away from the substrate 310, and the other end of the metal part 340 is exposed outside the molding layer 330 and extends along the surface of the molding layer 330 to the substrate 310.

[0054] In a specific application scenario, the other end of the metal part 340 can extend along the surface of the molding layer 330 to the substrate 310 and be welded and fixed to the conductive lines on the substrate 310, thereby leading the signal of the field effect transistor 320 away from the substrate 310 to the substrate 310.

[0055] In another specific application scenario, multiple through holes (not shown in the figure) can be formed on the substrate 310. The other end of the metal part 340 can extend along the surface of the molding layer 330 to the substrate 310 and pass through the corresponding through holes to reach the other side of the substrate 310, thereby leading the signal of the field effect transistor 320 away from the substrate 310 to the substrate 310.

[0056] By setting the metal component 340 as described above, the heat dissipation area of ​​the exposed metal component 240 can be further increased, thereby further improving the heat dissipation capacity and efficiency of the metal component 340, and further improving the service life and reliability of the field-effect transistor 320 and the electronic load device 300.

[0057] In other embodiments, the gate and source of the field-effect transistor 320 can be electrically connected to conductive lines on the substrate 310 by soldering, and the drain of the field-effect transistor 320 can be electrically connected to the metal part 340, thereby realizing the function of the field-effect transistor 320.

[0058] With the above structure, the electronic load device 300 of this embodiment can be set up in the form of an encapsulation, which improves modular design, reduces the design cycle of the electronic load device 300 and facilitates the maintenance of the electronic load device 300.

[0059] Please see Figure 4 , Figure 4 This is a schematic diagram of the circuit structure of an embodiment of the electronic load device provided by the present invention. The circuit structure of this embodiment can be applied to the electronic load device of any of the above embodiments.

[0060] The circuit structure of this embodiment includes a field-effect transistor 450 and various functional devices (not labeled in the figure). These functional devices include: a controller 410, a first digital-to-analog converter 430, a comparator 440, a sampler 470, an amplifier 460, and a second digital-to-analog converter 420. The first digital-to-analog converter 430 is an ADC (analog signal to digital signal converter), and the second digital-to-analog converter 420 is a DAC (digital signal to analog signal converter). The field-effect transistor 450 includes a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).

[0061] The field-effect transistor 450 is electrically connected to the sampler 470, the sampler 470 is electrically connected to the amplifier 460, the amplifier 460 is electrically connected to the first digital-to-analog converter 430 and the comparator 440 respectively; the comparator 440 is electrically connected to the field-effect transistor 450.

[0062] The first digital-to-analog converter 430 is also electrically connected to the controller 410, the controller 410 is electrically connected to the second digital-to-analog converter 420, and the second digital-to-analog converter 420 is electrically connected to the comparator 440.

[0063] Through the above connection method, the electronic load device 400 of this embodiment can realize its load function.

[0064] In other embodiments, the drain of the field-effect transistor 450 is electrically connected to the target object, the gate of the field-effect transistor 450 is electrically connected to the comparator 440, and the source of the field-effect transistor 450 is electrically connected to the sampler 470, for connecting to the target object via the sampler 470. The target object in this embodiment can be various power supply products or other test objects, and is not limited thereto.

[0065] When the target object is connected to the electronic load device, power is consumed by the field-effect transistor 450. Simultaneously, the power consumption path passes through the sampler 470, creating a voltage difference across it. This difference is amplified by the amplifier 460, forming a multi-path feedback circuit. The first path goes directly to the negative terminal of the comparator 440, comparing it with a pre-set comparison value from the controller 410 via the output of the second digital-to-analog converter 420. When the value from the amplifier 460 is less than the output value from the second digital-to-analog converter 420, the comparator 440 outputs a high level, and the field-effect transistor 450 remains in a power-consuming state. Different constant current values ​​can be set by adjusting the value of the second digital-to-analog converter 420. When the value from the amplifier 460 is greater than the set value from the second digital-to-analog converter 420, the output is low, turning off the field-effect transistor 450. The second path converts the current value into a digital signal through the first digital-to-analog converter 430, which is then sent to the controller 410 to read the current value for feedback. The third path can also be extended to provide overcurrent protection, ensuring no damage to the electronic load device or the target object.

[0066] Please see Figure 5 , Figure 5 This is a schematic diagram of the bottom structure of an embodiment of the electronic load device provided by the present invention. The bottom structure of this embodiment can be applied to the electronic load device of any of the above embodiments.

[0067] The bottom structure of this embodiment can be formed on the other side of the substrate of the electronic load device of any of the above embodiments.

[0068] The bottom structure includes a ground pin (GND), a power supply pin (VCC), a load pin (LOAD+), a reference voltage (Ref+, Ref-), and ADC_I and ADC_AGJ_I.

[0069] Please see Figure 6 , Figure 6 This is a schematic diagram of an embodiment of the electronic load device provided by the present invention.

[0070] The electronic load device 600 of this embodiment includes a plurality of electronic load devices 610. The electronic load devices 610 include the electronic load devices of any of the above embodiments.

[0071] Multiple electronic load devices 610 are connected in parallel to increase the load power. This allows the electronic load device 600 to be applied to power supply aging equipment, and the electronic load devices 610 can be selected for parallel connection to increase the load power according to different power requirements.

[0072] In a specific application scenario, when the target object is a power supply product with a voltage of 10V, and an electronic load device 610 can only support 2V testing, five electronic load devices 610 can be connected in parallel to achieve the testing of the power supply product.

[0073] This embodiment modularizes the electronic load device 610, thereby increasing the flexibility of the electronic load device 610 in the electronic load device 600. It can be adjusted according to the needs of the target object, improving the versatility of the electronic load device 600.

[0074] The above are merely embodiments of the present invention and do not limit the patent scope of the present invention. Any equivalent structural or procedural transformations made based on the content of the present invention's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of the present invention.

Claims

1. An electronic load device, characterized in that, The electronic load device includes: A substrate on which conductive lines are formed; A field-effect transistor, wherein the field-effect transistor is fixed to one side of the substrate and electrically connected to the conductive lines; A metal component, said metal component being fixed to the side of the field-effect transistor away from the substrate; Multiple functional devices are provided, each of which is fixed to one side of the substrate by means of a wafer and electrically connected to the conductive lines by wire bonding. A molding compound is attached to one side of the substrate and encapsulates the field-effect transistor, each of the functional devices, and a portion of the metal component. One end of the metal component is fixed and electrically connected to the side of the field-effect transistor away from the substrate, while the other end of the metal component is exposed outside the molding compound and extends along the surface of the molding compound to the substrate. A plurality of through-holes are formed on the substrate. The other end of the metal component extends along the surface of the molding compound to the substrate, passes through the corresponding through-hole, and reaches the other side of the substrate to guide the signal from the side of the field-effect transistor away from the substrate to the substrate. The multiple functional devices include: a controller, a first digital-to-analog converter (DAC), a comparator, a sampler, an amplifier, and a second DAC; the field-effect transistor (FET) is electrically connected to the sampler, the sampler is electrically connected to the amplifier, and the amplifier is electrically connected to both the first DAC and the comparator; the comparator is electrically connected to the FET; the first DAC is also electrically connected to the controller, the controller is electrically connected to the second DAC, and the second DAC is electrically connected to the comparator; The drain of the field-effect transistor is used to be electrically connected to the target object, the gate of the field-effect transistor is electrically connected to the comparator, and the source of the field-effect transistor is electrically connected to the sampler, so as to be electrically connected to the target object through the sampler. The target object is connected to the electronic load device, which consumes energy through the field-effect transistor. At the same time, the energy consumption path passes through the sampler, forming a voltage difference across the sampler. After being amplified by the amplifier, a multi-feedback working path is formed. The first working path directly connects to the negative terminal of the comparator, comparing it with a pre-set comparison value from the controller via the output of the second digital-to-analog converter. When the amplifier value is less than the output value of the second digital-to-analog converter, the comparator outputs a high level, and the field-effect transistor remains in a power-consuming state. Simultaneously, different constant current values ​​are set by adjusting the value of the second digital-to-analog converter. When the amplifier value is greater than the set value of the second digital-to-analog converter, the output is low, and the field-effect transistor is turned off. The second working path converts the current value into a digital signal through the first digital-to-analog converter and sends it to the controller to read the current value of the current state for feedback. The third working path is overcurrent protection to ensure that the electronic load device and the target object are not damaged.

2. The electronic load device according to claim 1, characterized in that, The field-effect transistor is welded and fixed to the conductive lines on one side of the substrate.

3. The electronic load device according to claim 1 or 2, characterized in that, The gate and source of the field-effect transistor are electrically connected to the conductive line; The drain of the field-effect transistor is electrically connected to the metal component.

4. An electronic load device, characterized in that, The electronic load device includes a plurality of electronic load devices, wherein the electronic load devices include the electronic load devices of any one of claims 1-3 above; The multiple electronic load devices are connected in parallel.

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