Sensing device and electronic device

Abstract

The present disclosure provides a sensing device, including a driving substrate and a sensing module. The driving substrate includes a first substrate and a plurality of driving circuits disposed on the first substrate. Each of the plurality of driving circuits includes a plurality of thin film transistors. The sensing module is bonded to the driving substrate. The sensing module includes a second substrate and a plurality of sensing components disposed on the second substrate. Each of the plurality of driving circuits is electrically connected to at least one of the plurality of sensing components. A bonding pad is provided. The sensing module is bonded to the driving substrate through the bonding pad. The present disclosure also provides an electronic device including the aforementioned sensing device.

Description

Technical Field

[0001] This disclosure relates to electronic devices, and in particular to electronic devices that include sensing functions. Background Technology

[0002] Optical sensing devices are widely used in consumer electronics products such as smartphones and wearable devices, and have become an indispensable necessity in modern society. With the booming development of these consumer electronics products, consumers have high expectations for the quality, functionality, and price of these products.

[0003] In optical sensing devices, the sensing components convert received light into electrical signals. These signals are then transmitted to the driving components and logic circuits within the device for processing and analysis. However, the size of the sensing chip increases with the resolution of the device, significantly increasing manufacturing costs and hindering the widespread adoption of related applications.

[0004] Therefore, developing structural designs that can further reduce the manufacturing cost of optical sensing devices while maintaining sensing sensitivity remains one of the topics that the industry is currently focusing on researching. Summary of the Invention

[0005] According to some embodiments of the present disclosure, a sensing device is provided, including a driving substrate and a sensing module. The driving substrate includes a first substrate and a plurality of driving circuits disposed on the first substrate. Each of the plurality of driving circuits includes a plurality of thin-film transistors. The sensing module is bonded to the driving substrate. The sensing module includes a second substrate and a plurality of sensing components disposed on the second substrate. The sensing module is bonded to the driving substrate through bonding pads. Furthermore, each of the plurality of driving circuits is electrically connected to at least one of the plurality of sensing components.

[0006] According to some embodiments of this disclosure, an electronic device is provided, including a display panel and a sensing device. The display panel has a display side, and the sensing device is attached to one side of the display panel opposite to the display side. The sensing device includes a driving substrate and a sensing module. The driving substrate includes a first substrate and a plurality of driving circuits disposed on the first substrate. Each of the plurality of driving circuits includes a plurality of thin-film transistors. The sensing module is bonded to the driving substrate. The sensing module includes a second substrate and a plurality of sensing components disposed on the second substrate. The sensing module is bonded to the driving substrate through bonding pads, and each of the plurality of driving circuits is electrically connected to at least one of the plurality of sensing components.

[0007] To make the features or advantages of this disclosure more apparent and understandable, some embodiments are described below in conjunction with the accompanying drawings. Attached Figure Description

[0008] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings, wherein:

[0009] Figure 1 This diagram shows a cross-sectional structural schematic of a sensing device according to some embodiments of the present disclosure;

[0010] Figure 2 This diagram shows a partial cross-sectional structural schematic of a sensing device according to some embodiments of the present disclosure;

[0011] Figure 3 This shows an equivalent circuit diagram of a sensing device according to some embodiments of the present disclosure;

[0012] Figure 4 This diagram shows a partial cross-sectional structural schematic of a sensing device according to some embodiments of the present disclosure;

[0013] Figure 5 This shows an equivalent circuit diagram of a sensing device according to some embodiments of the present disclosure;

[0014] Figure 6 This diagram shows a cross-sectional structural schematic of an electronic device according to some embodiments of the present disclosure;

[0015] Figure 7 This diagram shows a schematic representation of the sensing device according to some embodiments of the present disclosure;

[0016] Figure 8 The diagram shows a schematic representation of the structure of a sensing device according to some embodiments of the present disclosure.

[0017] Explanation of reference numerals in the attached figures

[0018] 1: Electronic devices

[0019] 10, 10A, 10B: Sensing devices

[0020] 40: Display panel

[0021] 100, 100': Driving substrate

[0022] 100A: Structural layer

[0023] 100C, 100C': Drive circuit

[0024] 102: First substrate

[0025] 104a, 104b: Passivation layers

[0026] 106a, 106b: Conductive layers

[0027] 106V, 108V: Through-hole

[0028] 108: Flattening layer

[0029] 120: First electrode

[0030] 200: Sensing Module

[0031] 202: Second substrate

[0032] 204: First film layer

[0033] 206: Second film layer

[0034] 208: Doped region

[0035] 210: Passivation layer

[0036] 220: Second electrode

[0037] 300: Joint pad

[0038] 302: Spacer material

[0039] 402: Cover plate

[0040] 404: Display layer

[0041] 406: Adhesive layer

[0042] 410: Light source

[0043] D1: Spacing

[0044] DS: Display side

[0045] FP: Finger

[0046] L: Light

[0047] RL: Reflected light

[0048] PD: Sensing Component

[0049] RST: Control signal

[0050] SEL: Scan line signal

[0051] TR1, TR2, TR3: First thin-film transistors

[0052] TRX1, TRX2, TRX3, TRX4: Second thin-film transistors

[0053] VCC0, VCC1, VCC2: System voltage lines

[0054] VOUT: Readout signal line Detailed Implementation

[0055] The sensing device and electronic device according to embodiments of this disclosure are described in detail below. It should be understood that the following description provides many different embodiments for implementing various forms of some embodiments of this disclosure. The specific components and arrangements described below are merely for simple and clear description of some embodiments of this disclosure. Of course, these are merely examples and not limitations of this disclosure. Furthermore, similar and / or corresponding reference numerals may be used in different embodiments to identify similar and / or corresponding components for clear description of this disclosure. However, the use of these similar and / or corresponding reference numerals is only for simple and clear description of some embodiments of this disclosure and does not represent any association between the different embodiments and / or structures discussed.

[0056] It should be understood that relative terms, such as "lower," "bottom," "higher," or "top," may be used in the embodiments to describe the relative relationship of one component of the figures to another. It is understood that if the apparatus in the figures is flipped upside down, the component described as being on the "lower" side will become the component on the "higher" side. Embodiments of this disclosure can be used in conjunction with the accompanying drawings. Figure 1 It should be understood that the accompanying drawings of this disclosure are also considered part of the disclosure. It should be understood that the drawings of this disclosure are not drawn to scale, and in fact, the dimensions of components may be arbitrarily enlarged or reduced to clearly show the features of this disclosure.

[0057] Furthermore, when a component or membrane is referred to as being "on" or "connected" to another component or membrane, it can be directly on or directly connected to that other component or membrane, or there may be an interposed component or membrane between them (indirect cases). Conversely, when a component is referred to as being "directly" on or "directly connected" to another component or membrane, there may be no interposed component or membrane between them.

[0058] Furthermore, it should be understood that the ordinal numbers used in the specification and claims, such as "first," "second," etc., to modify components, do not in themselves imply or represent any prior ordinal number for that (or the plurality of) components, nor do they represent the order of one component with another, or the order of manufacturing methods. The use of these ordinal numbers is solely to clearly distinguish one component with a certain name from another component with the same name. The claims and specification may not use the same terminology; for example, the first component in the specification may be the second component in the claims.

[0059] In some embodiments of this disclosure, terms such as "connection" and "coupled," unless specifically defined, may refer to two structures being in direct contact, or to two structures not being in direct contact, wherein another structure is disposed between the two structures. Furthermore, these terms regarding engagement and connection may also include cases where both structures are movable or both structures are fixed. In addition, the terms "electrical connection" or "electrical coupling" include any direct and indirect electrical connection means.

[0060] In this text, the terms "approximately" and "substantially" typically indicate that a given value or range is within 10%, 5%, 3%, 2%, 1%, or 0.5%. The given quantities are approximate; that is, even without specific mention of "approximately" or "substantially," their meaning is implied. The phrase "a range greater than or equal to a first value and less than or equal to a second value" indicates that the range includes the first value, the second value, and other values ​​in between.

[0061] The electronic devices disclosed herein may include, but are not limited to, display devices, antenna devices, sensing devices, touch displays, curved displays, or free-shape displays. The electronic devices may be bendable or flexible. The electronic devices may include, for example, light-emitting diodes (LEDs), liquid crystals, fluorescent, phosphorescent, quantum dot (QD) displays, other suitable display media, or combinations thereof, but are not limited to these. Light-emitting diodes may include, for example, organic light-emitting diodes (OLEDs), inorganic light-emitting diodes (LEDs), mini LEDs, micro LEDs, or quantum dot LEDs (e.g., QLEDs, QDLEDs), or other suitable materials or any arrangement or combination thereof, but are not limited to these. Display devices may include, for example, video wall displays, but are not limited to these. Antenna devices may be, for example, liquid crystal antennas, but are not limited to these. Antenna devices may include, for example, antenna splicing devices, but are not limited to these. It should be noted that the electronic device can be any of the aforementioned arrangements and combinations, but is not limited thereto. Furthermore, the electronic device can be rectangular, circular, polygonal, have curved edges, or other suitable shapes. The electronic device may have peripheral systems such as a drive system, control system, light source system, shelving system, etc., to support display devices, antenna devices, or splicing devices. The following description will use display devices as an example, but this disclosure is not limited thereto.

[0062] It should be understood that the features described below can be replaced, combined, or reorganized in several different embodiments to complete other embodiments without departing from the spirit of this disclosure. Features between embodiments can be arbitrarily reorganized and combined as long as they do not violate the spirit of the invention or conflict with it.

[0063] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It is understood that such terms, for example, as defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the relevant art and the background or context of this disclosure, and should not be interpreted in an idealized or overly formal manner, unless specifically defined in embodiments of this disclosure.

[0064] Please refer to Figure 1 , Figure 1The figures show cross-sectional structural schematics of sensing device 10 according to some embodiments of the present disclosure. It should be understood that, for clarity, some components of sensing device 10 are omitted from the figures, and only some components are schematically shown. According to some embodiments, additional features may be added to sensing device 10 as described below. According to other embodiments, some features of sensing device 10 as described below may be replaced or omitted. According to other embodiments, sensing device 10 as described below can sense optical signals or thermal signals, but is not limited thereto. Embodiments of this disclosure will be described with the sensing device 10 capable of sensing optical signals.

[0065] like Figure 1 As shown, the sensing device 10 may include a driving substrate 100, a sensing module 200, and a bonding pad 300. The sensing module 200 can be bonded to and electrically connected to the driving substrate 100 through the bonding pad 300. The sensing module 200 can receive light and convert it into an electrical signal. The generated electrical signal can be transmitted to the driving substrate 100 for subsequent processing and analysis. First, the sensing module 200 will be described. The detailed structure of the driving substrate 100 will be discussed later. Figure 2 The details will be explained below, and the coupling pad 300 will also be explained in a later paragraph.

[0066] According to some embodiments, the sensing module 200 may include a second substrate 202 and a plurality of sensing components PDs disposed on the second substrate 202. The sensing components PDs may be photodiodes, which can convert light signals into electrical signals. More specifically, according to some embodiments, the sensing module 200 may include a first film layer 204, a second film layer 206, and a doped region 208 disposed on the second substrate 202, wherein the doped region 208 may be disposed in the second film layer 206. According to some embodiments, the sensing components PDs may include portions of the first film layer 204, the second film layer 206, and the doped region 208.

[0067] According to some embodiments, the second substrate 202, the first film layer 204, the second film layer 206, and the doped region 208 may be formed of a semiconductor material. The sensing component PD may include a semiconductor material, which may include indium phosphide (InP), indium antimonide (InSb), indium gallium arsenide (InGaAs), lead sulfide (PbS), lead selenide (PbSe), mercury cadmium telluride (HgCdTe), other suitable semiconductor materials, or combinations thereof, but is not limited thereto. According to some embodiments, the second substrate 202 may be an epitaxial substrate.

[0068] According to some embodiments, the aforementioned semiconductor material may contain group III or group V elements, thereby having p-type or n-type conductivity. For example, according to some embodiments, the second substrate 202, the first film layer 204, and the second film layer 206 may have the same conductivity type, while the doped region 208 may have different conductivity types, thereby forming the PN junction of the sensing component PD. For example, according to some embodiments, the second substrate 202, the first film layer 204, and the second film layer 206 have p-type conductivity, while the doped region 208 has n-type conductivity. According to other embodiments, the second substrate 202, the first film layer 204, and the second film layer 206 have n-type conductivity, while the doped region 208 has p-type conductivity. More specifically, according to some embodiments, the second substrate 202 may be N-type InP, the first film layer 204 may be N-type InGaAs, the second film layer 206 may be N-type InP, and group III elements may be implanted in the second film layer 206 to form a P-type doped region 208, but is not limited thereto.

[0069] According to some embodiments, the aforementioned second substrate 202, first film layer 204, and second film layer 206 can be formed using metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), liquid phase epitaxy (LPE), or other suitable processes, but this disclosure is not limited thereto. Furthermore, according to some embodiments, the aforementioned doped region 208 can be formed using ion implantation, diffusion, or other suitable processes, but this disclosure is not limited thereto.

[0070] According to some embodiments, the sensing component PD is used to absorb light of a specific wavelength band. The specific wavelength band of light referred to in this disclosure can be, for example, a visible light source or an invisible light source. A visible light source can be, for example, a laser light source, and an invisible light source can be, for example, an infrared light (IR) light source, but is not limited thereto. Specifically, according to some embodiments, the wavelength range of the aforementioned infrared light band is greater than or equal to about 750 nanometers (nm) and less than or equal to about 1500 nanometers (i.e., 750nm ≤ wavelength ≤ 1500nm). It is worth noting that the sensing component PD that absorbs light of a specific wavelength band can reduce noise generated by the absorption of ambient light by the sensing component PD, thereby improving the sensing sensitivity of the sensing module 200.

[0071] like Figure 1As shown, according to some embodiments, the sensing device 10 may include a plurality of bonding pads 300, and the sensing module 200 may be bonded to the driving substrate 100 via the plurality of bonding pads 300, and connected to the driving circuit 100C disposed on the driving substrate 100 (to be used in conjunction with the driving circuit 100C disposed on the driving substrate 100). Figure 3 (For explanation) Electrical connection. Specifically, according to some embodiments, the sensing device 10 may include a plurality of first electrodes 120 and a plurality of second electrodes 220. The first electrodes 120 are disposed on the driving substrate 100, and the second electrodes 220 are disposed on the sensing module 200. A bonding pad 300 may be disposed between the first electrodes 120 and the second electrodes 220, and the bonding pad 300 may be bonded to the first electrodes 120 and the second electrodes 200, thereby electrically connecting the first electrodes 120 and the second electrodes 200. That is, the sensing module 200 includes a plurality of sensing components PD disposed on the second substrate 202. When the sensing components PD convert optical signals into electrical signals, the electrical signals can be transmitted to the driving substrate 100 through the plurality of bonding pads 300, the first electrodes 120, and the second electrodes 200.

[0072] like Figure 1 As shown, according to some embodiments, the bonding pad 300 has a first width W1 in a first direction, the first electrode 120 has a second width W2, and the second electrode 200 has a third width W3. The first width W1, second width W2, and third width W3 can be, for example, the maximum widths, but are not limited thereto. Specifically, the first width W1 can be greater than or equal to the second width W2, the first width W2 can be greater than or equal to the third width, and the second width W2 can be approximately equal to the third width W3, but are not limited thereto. This configuration improves the bonding between the sensing module 200 and the driving substrate 100, further enhancing the electrical connection. The first direction (X direction) and the second direction (Y direction) are perpendicular to the third direction (Z direction), which can be, for example, the normal direction of the substrate.

[0073] Furthermore, according to some embodiments, the pitch D1 between sensing components PDs can be greater than or equal to about 10 μm and less than or equal to about 30 μm (i.e., 10 μm ≤ pitch D1 ≤ 30 μm), or greater than or equal to about 15 μm and less than or equal to about 20 μm. Specifically, the pitch D1 between sensing components PDs refers to the distance between two adjacent first electrodes 120 that are electrically connected to two adjacent sensing components PDs, respectively. For example, pitch D1 refers to the distance between a first electrode 120 and another adjacent first electrode 120', or pitch D1 refers to the distance between a first electrode 120 and the closest other first electrode 120', which can be the distance between the center point of the first electrode 120 and the center point of the other adjacent first electrode 120'. In detail, for example, in a cross-sectional view, the center point of the first electrode 120 is the intersection of the two diagonals of the first electrode 120, and the center point of the other first electrode 120' is the intersection of the two diagonals of the other first electrode 120'. Alternatively, according to some embodiments, the distance between the aforementioned first electrode 120 and another adjacent first electrode 120' can be the distance between the side of the first electrode 120 and the side of the adjacent first electrode 120'. Specifically, the first electrode 120 has a first side 1201, and the other first electrode 120' has a second side 1202 and a third side 1203, wherein the third side 1203 is farther from the first side 1201 in an X direction than the second side 1202. That is, the distance can be the distance between the first side 1201 of the first electrode 120 and the third side 1203 of the adjacent first electrode 120'. The other first electrode side 1202 can be measured using a suitable method depending on the product requirements to obtain the spacing between the sensing components PD, but is not limited thereto.

[0074] According to some embodiments (not shown), the first electrode 120 or the second electrode 200 may be omitted. The spacing D1 between the sensing components PD refers to the distance between two adjacent bonding pads 300 electrically connected to two adjacent sensing components PD. Specifically, spacing D1 refers to the distance between a first bonding pad 300 and another adjacent first bonding pad 300'. This distance can be the distance between the side of the first bonding pad 300 and the side of the adjacent first bonding pad 300', but is not limited to this. A suitable measurement method can be selected to obtain the spacing D1 according to requirements. By setting the spacing D1 as described above, insufficient number of sensing components PD can be avoided, which affects sensing sensitivity, or excessive number of sensing components PD can be avoided, which increases costs.

[0075] Furthermore, it should be understood that, according to embodiments of this disclosure, the spacing or distance between components, or the width, thickness, height, or area of ​​each component, can be measured using an optical microscopy (OM), a scanning electron microscope (SEM), an alpha-step thickness gauge, an ellipsometry, or other suitable methods. Specifically, according to some embodiments, a scanning electron microscope can be used to obtain a cross-sectional image containing the components to be measured, and the spacing or distance between components, or the width, thickness, height, or area of ​​each component, can be measured.

[0076] Furthermore, according to some embodiments, the sensing device 10 may further include a passivation layer 210 and a spacer material 302, which may be disposed between the sensing module 200 and the driving substrate 100. According to some embodiments, the passivation layer 210 may be disposed on the second film layer 206, and the passivation layer 210 has through-holes, with a portion of the second electrode 220 disposed in the through-holes to electrically connect the doped region 208 and the bonding pad 300. According to some embodiments, the spacer material 302 may fill the spaces between the bonding pads 300, which can reduce the impact of moisture or oxygen in the environment on the first electrode 120, the second electrode 220, the bonding pad 300, or the driving substrate 100, reducing the risk of corrosion or oxidation of the aforementioned components.

[0077] The first electrode 120 and the second electrode 220 may comprise conductive materials, such as metallic conductive materials, transparent conductive materials, other suitable conductive materials, or combinations thereof, but are not limited thereto. According to some embodiments, the metallic conductive material may comprise nickel (Ni), copper (Cu), silver (Ag), gold (Au), tin (Sn), aluminum (Al), molybdenum (Mo), tungsten (W), chromium (Cr), platinum (Pt), titanium (Ti), alloys of the aforementioned metals, other suitable materials, or combinations thereof, but are not limited thereto. According to some embodiments, the transparent conductive material may comprise a transparent conductive oxide (TCO), such as indium tin oxide (ITO), antimony zinc oxide (AZO), tin oxide (SnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), antimony tin oxide (ATO), other suitable transparent conductive materials, or combinations thereof, but not limited thereto.

[0078] According to some embodiments, the bonding pad 300 may contain tin (Sn), aluminum (Al), tin alloy, aluminum alloy, other suitable welding materials, or combinations thereof, but is not limited thereto.

[0079] According to some embodiments, the passivation layer 210 may be a single layer or multiple layers, and the material of the passivation layer 210 may include inorganic materials, organic materials, or combinations thereof, but is not limited thereto. For example, inorganic materials may include silicon nitride, silicon oxide, silicon oxynitride, other suitable materials, or combinations thereof, but are not limited thereto. For example, organic materials may include polyethylene terephthalate (PET), polyethylene (PE), polyethersulfone (PES), polycarbonate (PC), polymethyl methacrylate (PMMA), polyimide (PI), other suitable materials, or combinations thereof, but are not limited thereto.

[0080] According to some embodiments, the spacer material 302 may comprise organic materials, inorganic materials, other suitable protective materials, or combinations thereof, but is not limited thereto. For example, inorganic materials may comprise silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, or other suitable materials, but are not limited thereto. For example, organic materials may comprise epoxy resins, silicone resins, acrylic resins (e.g., polymethyl methacrylate (PMMA), benzocyclobutene (BCB), polyimide, polyester, polydimethylsiloxane (PDMS), polyfluoroalkoxy (PFA)), other suitable materials, or combinations thereof, but are not limited thereto.

[0081] According to some embodiments, a passivation layer 210 can be formed on the second film layer 206 first, and a portion of the passivation layer 210 can be removed by a patterning process to form a via. Then, a second electrode 220 is formed on the passivation layer 210 and fills the via. After forming the first electrode 120 on the driving substrate 100, the driving substrate 100 and the sensing module 200 can be assembled. According to some embodiments, the second electrode 220 and the first electrode 120 can be bonded using a bonding pad 300 via a eutectic bonding process. According to some embodiments, after the eutectic bonding process, a spacer material 302 can be formed between the driving substrate 100 and the sensing module 200.

[0082] According to some embodiments, the passivation layer 210 can be formed by a coating process, a chemical vapor deposition process, a physical vapor deposition process, a printing process, other suitable processes, or a combination thereof. Chemical vapor deposition processes may include, for example, low-pressure chemical vapor deposition (LPCVD), low-temperature chemical vapor deposition (LTCVD), rapid-rise chemical vapor deposition (RTCVD), plasma-assisted chemical vapor deposition (PECVD), or atomic layer deposition (ALD), but are not limited thereto. Physical vapor deposition processes may include, for example, sputtering processes, evaporation processes, pulsed laser deposition, etc., but are not limited thereto.

[0083] Furthermore, the patterning process may include photolithography and / or etching processes. According to some embodiments, the photolithography process may include photoresist coating (e.g., spin coating), soft baking, hard baking, shielding alignment, exposure, post-exposure baking, photoresist development, cleaning, and drying, but is not limited thereto. The etching process may include dry etching or wet etching, but is not limited thereto.

[0084] According to some embodiments, the first electrode 120 and the second electrode 220 may be formed by chemical vapor deposition process, physical vapor deposition process, electroplating process, electroless plating process, other suitable process, or combination thereof, but this disclosure is not limited thereto.

[0085] According to some embodiments, the temperature range of the aforementioned eutectic bonding process may be less than 260°C, for example, greater than or equal to about 25°C and less than or equal to about 200°C or greater than or equal to about 160°C and less than or equal to about 260°C, and may be carried out for about 3 minutes to about 6 minutes, but this disclosure is not limited thereto.

[0086] Furthermore, according to some embodiments, the spacer material 302 can be formed by coating process, chemical vapor deposition process, physical vapor deposition process, printing process, other suitable process, or combination thereof.

[0087] Next, please refer to Figure 2 as well as Figure 3 , Figure 2 The diagram shows a partial cross-sectional view of the sensing device 10 according to some embodiments of the present disclosure. Figure 3 This diagram shows an equivalent circuit diagram of the sensing device 10 according to some embodiments of the present disclosure. Specifically, Figure 2 The detailed structure of the driving substrate 100 is shown. Figure 3 The circuit connection relationship between the sensing component PD and the driving circuit 100C in the sensing device 10 is shown.

[0088] According to some embodiments of this disclosure, a sensing device is provided. The driving substrate 100 of the sensing device 10 may, for example, include an active array driving substrate containing thin-film transistors (TFTs), but is not limited thereto. The substrate design of the embodiments of this disclosure can reduce manufacturing costs and increase the application range of the sensing device. According to some embodiments of this disclosure, the sensing device detects light in a specific wavelength band, and the structural design of the substrate can reduce the impact of noise on the sensing module, thereby improving the signal-to-noise ratio (SNR) or enhancing the overall performance of the sensing device, but is not limited thereto. The structure of the driving substrate 100 will be described below.

[0089] like Figure 2 as well as Figure 3As shown, the driving substrate 100 includes a first substrate 102 and a plurality of driving circuits 100C disposed on the first substrate 102. Each of the plurality of driving circuits 100C may include a plurality of thin-film transistors. In detail, each of the driving circuits 100C includes a plurality of first thin-film transistors (e.g., first thin-film transistor TR1, first thin-film transistor TR2 and first thin-film transistor TR3 in the figure). Furthermore, each of the driving circuits 100C is electrically connected to at least one of the plurality of sensing components PD. That is, the plurality of driving circuits 100C may be electrically connected to the plurality of sensing components PD respectively, but is not limited thereto.

[0090] The first substrate 102 may comprise a flexible substrate, a rigid substrate, or a combination thereof, but is not limited thereto. According to some embodiments, the material of the first substrate 102 may include glass, quartz, sapphire, ceramic, polyimide (PI), polycarbonate (PC), polyethylene terephthalate (PET), polypropylene (PP), other suitable materials, or combinations thereof, but is not limited thereto. Furthermore, according to some embodiments, the first substrate 102 may comprise a metal-glass fiber composite material or a metal-ceramic composite material, but is not limited thereto.

[0091] It is worth noting that the wavelength range of light that can penetrate the first substrate 102 formed of the aforementioned specific material can be greater than or equal to about 4 μm and less than or equal to about 10 μm. Therefore, through the embodiments disclosed herein, noise generated by external light or other reflected light being absorbed by the sensing component PD after penetrating the first substrate 102 can be reduced, thereby improving the signal-to-noise ratio (SNR) of the sensing device 10. Furthermore, according to some embodiments, by selecting the material of the first substrate 102 in conjunction with the aforementioned sensing component PD that absorbs light of a specific wavelength band, the SNR performance can be further improved, thereby improving the overall performance of the sensing device 10.

[0092] Furthermore, according to some embodiments, the driving substrate 100 may have a structural layer 100A, and the structural layer 100A may include conductive components and signal lines electrically connected to the first thin-film transistor, an insulating layer formed between the conductive components, and a planarization layer, etc. According to some embodiments, the signal lines may include, for example, current signal lines, voltage signal lines, high-frequency signal lines, and low-frequency signal lines, and the signal lines may transmit component operating voltage (VDD), common ground voltage (VSS), or driving component terminal voltage, and this disclosure is not limited thereto.

[0093] According to some embodiments, the first thin-film transistor may include a switching transistor, a driving transistor, a reset transistor, a transistor amplifier, or other suitable thin-film transistors. Specifically, as... Figure 2 As shown, according to some embodiments, the first thin-film transistor TR1 may be a reset transistor, the first thin-film transistor TR2 may be a transistor amplifier or a source follower, and the first thin-film transistor TR3 may be a switching transistor, but is not limited thereto.

[0094] It should be understood that the number of first thin-film transistors is not limited to those shown in the figures. Depending on the embodiment, the driving substrate 100 may have other suitable numbers or types of first thin-film transistors. Furthermore, the types of first thin-film transistors may include top-gate thin-film transistors, bottom-gate thin-film transistors, dual-gate thin-film transistors, or combinations thereof. According to some embodiments, the first thin-film transistors may be further electrically connected to a capacitor assembly, but are not limited thereto. Furthermore, the first thin-film transistor may include at least one semiconductor layer, a gate dielectric layer, and a gate electrode layer. The first thin-film transistor can exist in various forms well known to those skilled in the art, and detailed structures of the first thin-film transistors will not be described here.

[0095] Furthermore, such as Figure 2 As shown, according to some embodiments, the driving substrate 100 of the sensing device 10 may include a planarization layer 108, which may be disposed on the structural layer 100A and located between the structural layer 100A and the first electrode 120. The first electrode 120 may be disposed on the planarization layer 108 and electrically connected to the conductive layer 106a in the structural layer 100A via a conductive layer 106b, thereby being electrically connected to the first thin-film transistors TR1, TR2, and TR3.

[0096] According to some embodiments, conductive layer 106b can be electrically connected to conductive layer 106a through planarization layer 108, and conductive layer 106a can be electrically connected to the semiconductor layer of first thin-film transistor TR1, for example, through gate dielectric layer (not shown) and dielectric layer (not shown), but is not limited thereto. In detail, according to some embodiments, a portion of gate dielectric layer and dielectric layer in structural layer 100A can be removed by patterning process to form via 106v, then passivation layer 104a is formed on dielectric layer and in via 106v, then conductive layer 106a is formed on passivation layer 104a, and then passivation layer 104a and planarization layer 108 are formed above conductive layer 106a. According to some embodiments, a portion of the planarization layer 108 can be removed by a patterning process to form a via 108v. A passivation layer 104b is then formed on the planarization layer 108 and in the via 108v. A conductive layer 106b is then formed on the passivation layer 104b, followed by another passivation layer 104b above the conductive layer 106b. According to some embodiments, after forming the passivation layer 104b, a portion of the passivation layer 104b can be removed to expose a portion of the conductive layer 106b, and a first electrode 120 is formed above the exposed conductive layer 106b.

[0097] According to some embodiments, the materials of conductive layers 106a and 106b may include conductive materials, such as metallic conductive materials, transparent conductive materials, other suitable conductive materials, or combinations thereof, but are not limited thereto. According to some embodiments, conductive layers 106a and 106b may be formed by chemical vapor deposition processes, physical vapor deposition processes, electroplating processes, electroless plating processes, other suitable processes, or combinations thereof, but this disclosure is not limited thereto.

[0098] According to some embodiments, the materials of passivation layer 104a and passivation layer 104b may be the same as or similar to the material of the aforementioned passivation layer 204, and the methods for forming passivation layer 104a and passivation layer 104b may be the same as or similar to the process for forming the aforementioned passivation layer 204, which will not be repeated here.

[0099] According to some embodiments, the material of the planarization layer 108 may comprise organic materials, inorganic materials, other suitable materials, or combinations thereof, but is not limited thereto. For example, inorganic materials may comprise silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, other suitable materials, or combinations thereof, but are not limited thereto. For example, organic materials may comprise epoxy resins, silicone resins, acrylic resins (e.g., polymethyl methacrylate (PMMA), polyimide, perfluoroalkoxy alkane (PFA), other suitable materials, or combinations thereof, but are not limited thereto).

[0100] According to some embodiments, the planarization layer 108 may be formed by chemical vapor deposition, physical vapor deposition, coating, printing, other suitable processes, or combinations thereof, but this disclosure is not limited thereto.

[0101] As for the foregoing, according to some embodiments, the first electrode 120 and the second electrode 220 can be joined by the bonding pad 300, thereby electrically connecting the driving circuit 100C of the driving substrate 100 to the sensing module 200. For details, please refer to... Figure 3 According to some embodiments, first thin-film transistors TR1 and TR2 can be electrically connected to one end of the sensing component PD, and first thin-film transistor TR2 can be further electrically connected to first thin-film transistor TR3. According to some embodiments, first thin-film transistor TR1 can reset the potential of the sensing component PD, giving it an initial potential, and the photocurrent generated after the sensing component PD senses can cause a change in the potential of first thin-film transistor TR2, and first thin-film transistor TR3 can convert the potential change into a current change and transmit the signal generated by the current change.

[0102] As mentioned above, the driving circuit 100C includes a first thin-film transistor TR1, a first thin-film transistor TR2, and a first thin-film transistor TR3. For details, please refer to, for example... Figure 3 As shown, the sensing component PD may have a first terminal and a second terminal. The first terminal may be coupled to the system voltage line VCC2, and the second terminal may be coupled to the second terminal of the first thin film transistor TR1 and the control terminal of the first thin film transistor TR2.

[0103] The first thin-film transistor TR1 may have a first terminal, a second terminal, and a control terminal. The first terminal is coupled to the system voltage line VCC1, the second terminal is coupled to the sensing component PD, and the control terminal may be coupled to a control signal RST. The first thin-film transistor TR1 connects or disconnects the system voltage line VCC1 according to the control signal RST. When the first thin-film transistor TR1 is connected to the system voltage line VCC1, the potential of the sensing component PD can be reset; conversely, when the first thin-film transistor TR1 is disconnected from the system voltage line VCC1, the potential of the sensing component PD is not reset.

[0104] Furthermore, the first thin-film transistor TR2 may also have a first terminal, a second terminal, and a control terminal. The first terminal is coupled to the system voltage line VCC0, the second terminal is coupled to the first terminal of the first thin-film transistor TR3, and the control terminal may be coupled to the second terminal of the first thin-film transistor TR1 and the second terminal of the sensing component PD.

[0105] Furthermore, the first thin-film transistor TR3 may also have a first terminal, a second terminal, and a control terminal. The first terminal is coupled to the second terminal of the first thin-film transistor TR2, the second terminal is coupled to the read signal line VOUT, and the control terminal is coupled to the scan line signal SEL. The first thin-film transistor TR3 can connect or disconnect the first terminal of the first thin-film transistor TR3 from the read signal line VOUT according to the scan line signal SEL. When the first terminal of the first thin-film transistor TR3 is connected to the read signal line VOUT, it can output current to the read signal line VOUT; conversely, when the first terminal of the first thin-film transistor TR3 is disconnected from the read signal line VOUT, it does not output current to the read signal line VOUT.

[0106] Next, please refer to Figure 4 as well as Figure 5 , Figure 4 This diagram shows a partial cross-sectional view of the sensing device according to other embodiments of the present disclosure. Figure 5 This shows, according to other embodiments of the present disclosure, corresponding to Figure 4 The equivalent circuit diagram of the sensing device. Specifically, Figure 4 The detailed structure of the driving substrate 100' is shown. Figure 5 The circuit connection between the sensing component PD and the driving circuit 100C' in the sensing device is shown.

[0107] Furthermore, it should be understood that components or components that are the same or similar to those mentioned above will be indicated by the same or similar designations in the following text, and their materials, manufacturing methods and functions are the same or similar to those described above. Therefore, this part will not be repeated in the following text.

[0108] like Figure 4 as well as Figure 5 As shown, according to some embodiments, in addition to the foregoing Figure 2 as well as Figure 3 In addition to the first thin-film transistors TR1, TR2, and TR3 in the illustrated embodiment, the driving substrate 100' may further include a plurality of second thin-film transistors (e.g., Figure 4 as well as Figure 5 The second thin-film transistors TRX1, TRX2, TRX3, and TRX4 are described in the text. According to some embodiments, the first thin-film transistor TR1 (or the first thin-film transistor TR2 or TR3) can be electrically connected to the sensing component PD via the second thin-film transistor TRX1. Specifically, the second thin-film transistor TRX1 can be electrically connected to the conductive layer 106a, and thus electrically connected to the first thin-film transistors TR1, TR2, and TR3. According to some embodiments, the conductive layer 106b can be electrically connected to the conductive layer 106a through the planarization layer 108, and the conductive layer 106a can be electrically connected to the semiconductor layer of the second thin-film transistor TRX1, for example, through the gate dielectric layer (not shown) and the dielectric layer (not shown), but is not limited thereto.

[0109] In addition, according to some embodiments, the first thin-film transistor TR1 (or the first thin-film transistor TR2, the first thin-film transistor TR3) can also be electrically connected to another sensing component PD via the second thin-film transistors TRX2, TRX3 and TRX4 respectively.

[0110] According to some embodiments, the second thin-film transistors TRX1, TRX2, TRX3, and TRX4 can be transfer transistors, wherein multiple second thin-film transistors TRX2 can be connected in parallel with each other, but are not limited thereto.

[0111] It is worth noting that, according to Figure 4 as well as Figure 5 In the illustrated embodiment, by using the second thin-film transistors TRX1, TRX2, TRX3, and TRX4, for example, four sensing components PD can be coupled to different pixels respectively. The four sensing components PD can share a set of first thin-film transistors (i.e., first thin-film transistors TR1, TR2, and TR3). In this way, the number of thin-film transistors per pixel can be reduced, the pixel pitch can be reduced, and the resolution of the electronic device with sensing function can be improved.

[0112] Furthermore, it should be understood that the number of second thin-film transistors and sensing components (PDs) is not limited to those shown in the figures. Depending on the embodiment, other suitable numbers of second thin-film transistors and sensing components (PDs) may be present. Moreover, the types of second thin-film transistors may include top-gate thin-film transistors, bottom-gate thin-film transistors, dual-gate thin-film transistors, or combinations thereof. According to some embodiments, the second thin-film transistor may be further electrically connected to a capacitor component, but is not limited thereto. Furthermore, the second thin-film transistor may include at least one semiconductor layer, a gate dielectric layer, and a gate electrode layer. The second thin-film transistor can exist in various forms well known to those skilled in the art, and detailed structures of the second thin-film transistor will not be described here.

[0113] Furthermore, the equivalent circuit diagram of the driving circuit 100C' and the sensing component PD is further explained below. As mentioned above, the first thin-film transistor TR1 (or the first thin-film transistor TR2, the first thin-film transistor TR3) can be electrically connected to the sensing component PD via the second thin-film transistor TRX1, and can be electrically connected to other sensing components PD via the second thin-film transistors TRX2, TRX3 and TRX4 respectively.

[0114] In detail, each sensing component PD may have a first terminal and a second terminal. The first terminal may be coupled to the system voltage line VCC2, and the second terminal may be coupled to the first terminal of the second thin-film transistor TRX1, TRX2, TRX3, or TRX4. Furthermore, the second terminals of the second thin-film transistors TRX1, TRX2, TRX3, and TRX4 may be coupled to the second terminal of the first thin-film transistor TR1 and the control terminal of the first thin-film transistor TR2.

[0115] The first thin-film transistor TR1 may have a first terminal, a second terminal, and a control terminal. The first terminal is coupled to the system voltage line VCC1, the second terminal is coupled to the sensing component PD, and the control terminal may be coupled to a control signal RST. The first thin-film transistor TR1 connects or disconnects the system voltage line VCC1 according to the control signal RST. When the first thin-film transistor TR1 is connected to the system voltage line VCC1, the potential of the sensing component PD can be reset; conversely, when the first thin-film transistor TR1 is disconnected from the system voltage line VCC1, the potential of the sensing component PD is not reset. Furthermore, the first thin-film transistor TR1 may alternately reset the potential of the sensing component PD connected to the second thin-film transistors TRX1, TRX2, TRX3, and TRX4.

[0116] Furthermore, the first thin-film transistor TR2 may also have a first terminal, a second terminal, and a control terminal. The first terminal is coupled to the system voltage line VCC0, the second terminal is coupled to the first terminal of the first thin-film transistor TR3, and the control terminal may be coupled to the second terminal of the first thin-film transistor TR1 and the second terminal of the sensing component PD.

[0117] Furthermore, the first thin-film transistor TR3 may also have a first terminal, a second terminal, and a control terminal. The first terminal is coupled to the second terminal of the first thin-film transistor TR2, the second terminal is coupled to the read signal line VOUT, and the control terminal is coupled to the scan line signal SEL. The first thin-film transistor TR3 can connect or disconnect the first terminal of the first thin-film transistor TR3 from the read signal line VOUT according to the scan line signal SEL. When the first terminal of the first thin-film transistor TR3 is connected to the read signal line VOUT, current can be output to the read signal line VOUT; conversely, when the first terminal of the first thin-film transistor TR3 is disconnected from the read signal line VOUT, no current is output to the read signal line VOUT. In addition, the signals of the second thin-film transistors TRX1, TRX2, TRX3, and TRX4 can be output to the read signal line VOUT in turn.

[0118] Next, please refer to Figure 6 , Figure 6 The figures show a cross-sectional view of electronic device 1 according to some embodiments of the present disclosure. It should be understood that, for clarity, the figures only schematically show some components of electronic device 1. According to some embodiments, additional features may be added to electronic device 1 as described below.

[0119] According to some embodiments, the electronic device 1 may include the aforementioned sensing device 10 and a display panel 40. The display panel 40 has a display side DS, and the sensing device 10 may be attached to the side of the display panel 40 opposite to the display side DS. According to some embodiments, the electronic device 1 may have a sensing function. Specifically, the electronic device may have functions such as touch control or fingerprint recognition. For example, the electronic device 1 may be a touch display device, but is not limited thereto. For example, the light L generated by the display panel 40 is reflected by the finger FP to generate reflected light RL. The reflected light RL can be transmitted to the sensing device 10, which can sense the touch of the finger and convert it into an electronic signal for identification and analysis by the corresponding driving component or signal processing component.

[0120] In detail, according to some embodiments, the display panel 40 may include a cover plate 402, a display layer 404, and a light source 410. The cover plate 402 is disposed on the display layer 404, and the display layer 402 and the light source 410 are adjacent to the cover plate 402. The display layer 404 and the light source 410 do not overlap in the normal direction of the cover plate 402 (e.g., the Z direction in the figures). The Z direction may be, for example, the normal direction of the cover plate 402, and the X direction is perpendicular to the Z direction, and the Y direction is perpendicular to the Z direction.

[0121] According to some embodiments, cover plate 402 may provide a surface for touch and operation, protecting structures such as display layer 404 located beneath it. According to some embodiments, the material of cover plate 402 may include, but is not limited to, glass, quartz, sapphire, ceramic, other suitable materials, or combinations thereof.

[0122] According to some embodiments, the light source 410 provides light in the infrared band, and the sensing component PD absorbs the light emitted by the light source 410. That is, the light source 410 is used to provide light in a specific infrared band (e.g., light L in the figure) to the sensing component PD. According to some embodiments, the wavelength range of the aforementioned infrared band may be greater than or equal to about 750 nm and less than or equal to about 1500 nm (i.e., 750 nm ≤ wavelength ≤ 1500 nm). According to some embodiments, the wavelength range of the light provided by the light source 410 is greater than the wavelength range of the light provided by the display layer 404. It is worth noting that the sensing component PD, which absorbs light in a specific band, can reduce the noise generated by the absorption of ambient light and light generated by the display layer 404 by the sensing component PD, thereby improving the sensing sensitivity or overall performance of the electronic device 1.

[0123] In addition, such as Figure 6 As shown, according to some embodiments, the electronic device further includes an adhesive layer 406 disposed between the display panel 40 and the sensing device 10. The sensing device 10 can be attached to the side of the display panel 40 opposite to the display side DS through the adhesive layer 406, but is not limited thereto. The adhesive layer 406 may contain an adhesive material. According to some embodiments, the adhesive layer 406 may contain a photocurable adhesive, a thermocurable adhesive, a photothermal curable adhesive, other suitable materials, or combinations thereof, but is not limited thereto. For example, according to some embodiments, the adhesive layer 406 may contain an optically clear adhesive (OCA), an optically clear resin (OCR), a pressure-sensitive adhesive (PSA), other suitable materials, or combinations thereof, but is not limited thereto.

[0124] Next, please refer to Figure 7, Figure 7 The diagram shows a schematic representation of the sensing device 10A according to some embodiments of the present disclosure. It should be understood that... Figure 7 The driving substrate 100 and sensing module 200 of the sensing device 10A are shown only schematically. The sensing module 200 can be bonded to the driving substrate 100 through the bonding pad 300, but is not limited thereto. The detailed structure of the driving substrate 100 and sensing module 200 can be referred to the description in the foregoing embodiments, and will not be repeated here.

[0125] like Figure 7 As shown, according to some embodiments, the first substrate 102 of the driving substrate 100 and the second substrate 202 of the sensing module 200 can be curved substrates, that is, both the first substrate 102 of the driving substrate 100 and the second substrate 202 of the sensing module 200 are flexible. This structural design can reduce or eliminate the optical structures required by conventional sensing devices, for example, reducing the number of lenses required, but is not limited thereto. Furthermore, the curved design provides a wider field of view (FOV).

[0126] Next, please refer to Figure 8 , Figure 8 This diagram shows a structural schematic of the sensing device 10B according to other embodiments of the present disclosure. It should be understood that... Figure 8 The driving substrate 100 and sensing module 200 of the sensing device 10B are shown only schematically.

[0127] like Figure 8 As shown, according to some embodiments, the sensing device 10B may include multiple sensing modules 200, and the multiple sensing modules 200 may be coupled to the same driving substrate 100, that is, the multiple sensing modules 200 may be coupled to the same driving substrate 100. Specifically, the multiple sensing modules 200 may be coupled to the same driving substrate 100 through multiple bonding pads 300. Furthermore, the first substrate 102 of the driving substrate 100 and the second substrate 200 of the sensing modules 200 may also be curved substrates. With this structural design, the sensing modules 200 can be individually tested before being coupled to the driving substrate 100, and if a sensing module 200 malfunctions, it can be individually replaced or repaired, improving the durability of the sensing device 10B.

[0128] In summary, according to some embodiments of this disclosure, the provided sensing device uses an active array driving substrate including thin-film transistors. The substrate design of the embodiments of this disclosure can reduce manufacturing costs and increase the application range of the sensing device. According to some embodiments of this disclosure, the sensing device detects light in a specific wavelength band, and the structural design of the substrate can reduce the impact of noise on the sensing module, thereby improving the signal-to-noise ratio or enhancing the overall performance of the sensing device.

[0129] While the embodiments and advantages of this disclosure have been disclosed above, it should be understood that any person skilled in the art can make modifications, substitutions, and refinements without departing from the spirit and scope of this disclosure. Features between embodiments of this disclosure can be freely combined and used as long as they do not violate the spirit of the invention or conflict with it. Furthermore, the scope of protection of this disclosure is not limited to the processes, machines, manufacturing, material composition, apparatus, methods, and steps described in the specific embodiments of the specification. Any person skilled in the art can understand from the disclosure of this disclosure that current or future developed processes, machines, manufacturing, material composition, apparatus, methods, and steps can be used according to this disclosure as long as they can perform substantially the same function or obtain substantially the same results in the embodiments described herein. Therefore, the scope of protection of this disclosure includes the aforementioned processes, machines, manufacturing, material composition, apparatus, methods, and steps. The scope of protection of this disclosure shall be determined by the scope of the appended claims. No embodiment or claim of this disclosure needs to achieve all the purposes, advantages, and features disclosed in this disclosure.

[0130] Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications and improvements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be defined by the claims.

Claims

1. A sensing device, characterized in that, include: A driving substrate includes a first substrate and a plurality of driving circuits disposed on the first substrate. Each of the plurality of driving circuits includes a plurality of thin film transistors, and the wavelength range of light penetrating the first substrate is greater than or equal to 4 μm and less than or equal to 10 μm. A sensing module is attached to the driving substrate, the sensing module including a second substrate and a plurality of sensing components disposed on the second substrate; as well as Multiple bonding pads are provided, and the sensing module is bonded to the driving substrate through the multiple bonding pads. Multiple first electrodes are disposed on the driving substrate; as well as A plurality of second electrodes are disposed on the sensing module, and a plurality of bonding pads are disposed between the plurality of first electrodes and the plurality of second electrodes. Each of the plurality of driving circuits is electrically connected to at least one of the plurality of sensing components. The plurality of thin-film transistors includes a first thin-film transistor and a plurality of second thin-film transistors. The plurality of sensing components share the first thin-film transistor through the plurality of second thin-film transistors, and the first thin-film transistor is electrically connected to the plurality of sensing components through the plurality of second thin-film transistors. The spacing between the plurality of sensing components is greater than or equal to 15 μm and less than or equal to 20 μm. The plurality of bonding pads have a first width, the plurality of first electrodes have a second width, and the plurality of second electrodes have a third width, wherein the first width is greater than or equal to the second width and the third width is greater than or equal to the third width.

2. The sensing device as claimed in claim 1, characterized in that, The sensing component includes a semiconductor material, which includes indium phosphide (InP), indium antimonide (InSb), indium gallium arsenide (InGaAs), lead sulfide (PbS), lead selenide (PbSe), mercury cadmium telluride (HgCdTe), or a combination thereof.

3. The sensing device as claimed in claim 1, characterized in that, The material of the first substrate includes glass or polyimide.

4. The sensing device as claimed in claim 1, characterized in that, The second substrate is an epitaxial substrate.

5. The sensing device as claimed in claim 1, characterized in that, It includes multiple sensing modules, wherein the multiple sensing modules are coupled to the driving substrate.

6. The sensing device as claimed in claim 1, characterized in that, The plurality of sensing components are used to absorb light in the infrared band.

7. The sensing device as claimed in claim 6, characterized in that, The wavelength range of the infrared light band is greater than or equal to 750 nanometers and less than or equal to 1500 nanometers.

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