Plasma processing apparatus

Abstract

A plasma processing apparatus is provided. In the plasma processing apparatus, an edge ring is arranged to surround a substrate on a substrate support in a plasma processing chamber. A ring electrode is arranged to surround the edge ring. A first bias RF power source is configured to supply a first bias RF power to the bias electrode. The first bias RF power has a first frequency and a first power level. A second bias RF power source is configured to supply a second bias RF power to the ring electrode. The second bias RF power has the first frequency and a second power level, and is synchronized with the first bias RF power. According to the present invention, variation in radial expansion of plasma within a period of the biasing energy supplied to the bias electrode of the substrate support of the plasma processing apparatus can be suppressed.

Description

Technical Field

[0001] The embodiments illustrated in this invention relate to plasma processing apparatus and plasma processing method. Background Technology

[0002] A plasma processing apparatus is used to perform plasma processing on a substrate. The apparatus includes a chamber, an electrostatic chuck, and a lower electrode. The electrostatic chuck and lower electrode are disposed within the chamber. The electrostatic chuck is mounted on the lower electrode. The electrostatic chuck supports an edge ring disposed thereon. The edge ring is sometimes referred to as a focusing ring. The electrostatic chuck supports the substrate within the area surrounded by the edge ring. During plasma processing in the apparatus, gas is supplied into the chamber. Additionally, high-frequency electrical power is supplied to the lower electrode. Plasma is formed from the gas within the chamber. The substrate is treated with chemical species such as ions and free radicals from the plasma.

[0003] When plasma processing is performed, the edge ring is consumed, and the thickness of the edge ring decreases. If the thickness of the edge ring decreases, the position of the upper end of the plasma sheath layer (hereinafter referred to as "sheath layer") above the edge ring becomes lower. The position of the upper end of the sheath layer above the edge ring in the vertical direction should be equal to the position of the upper end of the sheath layer above the substrate in the vertical direction. Japanese Patent Application Publication No. 2008-227063 (hereinafter referred to as "Patent Document 1") discloses a plasma processing apparatus capable of adjusting the position of the upper end of the sheath layer above the edge ring in the vertical direction. The plasma processing apparatus described in Patent Document 1 is configured to apply a DC voltage to the edge ring. In addition, the plasma processing apparatus described in Patent Document 1 is configured to adjust the power level of the high-frequency electrical power supplied to the lower electrode when a DC voltage is applied to the edge ring.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent document 1: Japanese Patent Application Publication No. 2008-227063. Summary of the Invention

[0007] The problem the invention aims to solve

[0008] The present invention provides a technique for suppressing the radial expansion variation of plasma during the period of the electrical bias energy supplied to the bias electrode of the substrate support of a plasma processing apparatus.

[0009] Technical solutions for solving the problem

[0010] In one exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a plasma processing chamber, a substrate support, an RF power supply, an edge ring, a ring electrode, a first bias power supply, and a second bias power supply. The substrate support is disposed within the plasma processing chamber and includes a bias electrode. The RF power supply is configured to generate RF power for generating plasma within the plasma processing chamber. The edge ring is arranged to surround a substrate on the substrate support. The ring electrode is arranged to surround the edge ring. The first bias RF power supply is configured to supply first bias RF power to the bias electrode. The first bias RF power supply has a first frequency and a first power level. The second bias RF power supply is configured to supply second bias RF power to the ring electrode. The second bias RF power supply has a first frequency and a second power level. The second bias RF power supply is synchronized with the first bias RF power supply.

[0011] Invention Effects

[0012] According to one exemplary embodiment, it is possible to suppress the variation in the radial expansion of the plasma during the period of the electrical bias energy supplied to the bias electrode of the substrate support of the plasma processing apparatus. Attached Figure Description

[0013] Figure 1 This is a diagram that schematically illustrates a plasma processing apparatus of an exemplary embodiment.

[0014] Figure 2 This is a diagram illustrating a substrate support and multiple power sources in a plasma processing apparatus according to an exemplary embodiment.

[0015] Figure 3 (a) and Figure 3 Figures (b) represent examples of electrical bias energy supplied to the bias electrode and electrical bias energy supplied to the ring electrode, respectively.

[0016] Figure 4 This is a diagram illustrating a substrate support and multiple power supplies in another exemplary embodiment.

[0017] Figure 5 This is a diagram illustrating a substrate support and multiple power supplies in another exemplary embodiment.

[0018] Figure 6 This is a diagram illustrating a substrate support and multiple power supplies in another exemplary embodiment.

[0019] Figure 7 This is a diagram illustrating a substrate support and multiple power supplies in another exemplary embodiment.

[0020] Figure 8This is a diagram illustrating a substrate support and multiple power supplies in another exemplary embodiment.

[0021] Figure 9 This is a diagram illustrating a substrate support and multiple power supplies in another exemplary embodiment.

[0022] Figure 10 This is a diagram illustrating a substrate support and multiple power supplies in another exemplary embodiment.

[0023] Figure 11 This is a diagram illustrating a substrate support and multiple power supplies in another exemplary embodiment.

[0024] Figure 12 This is a diagram illustrating a substrate support and multiple power supplies in another exemplary embodiment.

[0025] Figure 13 This is a diagram illustrating a substrate support and multiple power supplies in another exemplary embodiment.

[0026] Figure 14 This is a flowchart illustrating an exemplary embodiment of a plasma processing method.

[0027] Explanation of reference numerals in the attached figures

[0028] 1…Plasma processing device, 10…Cavity, 16…Substrate support, 18…Base, 20…Electrostatic chuck, 61, 63…High-frequency power supply, 62, 64…Bias power supply, W…Substrate, ER…Edge ring, DR…Annular electrode. Detailed Implementation

[0029] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. Furthermore, in each drawing, the same or equivalent parts are labeled with the same reference numerals.

[0030] Figure 1 This is a diagram that schematically illustrates a plasma processing apparatus of an exemplary embodiment. Figure 2 This is a diagram showing a substrate support and multiple power sources of a plasma processing apparatus according to an exemplary embodiment. Figure 1 The plasma processing apparatus 1 shown is a capacitively coupled plasma processing apparatus. The plasma processing apparatus 1 includes a chamber 10 (plasma processing chamber). An internal space 10s is formed within the chamber 10. The central axis of the internal space 10s is an axis AX extending in the vertical direction.

[0031] In one embodiment, the chamber 10 may also include a chamber body 12. The chamber body 12 has a generally cylindrical shape. An internal space 10s is formed within the chamber body 12. The chamber body 12 is made of, for example, aluminum. The chamber body 12 is electrically grounded. A plasma-resistant membrane is formed on the inner wall surface of the chamber body 12, i.e., the wall surface dividing the internal space 10s. This membrane may be a ceramic membrane such as a membrane formed by anodizing or a membrane formed of yttrium oxide.

[0032] The sidewall of the chamber body 12 provides a passage 12p. The substrate W passes through the passage 12p when transported between the internal space 10s and the outside of the chamber 10. To open and close the passage 12p, a gate valve 12g is provided along the sidewall of the chamber body 12.

[0033] like Figure 1 and Figure 2 As shown, the plasma processing apparatus 1 also includes a substrate support 16. The substrate support 16 is surrounded by a dielectric portion 17. The dielectric portion 17 extends radially outward from the substrate support 16 relative to the axis AX. The dielectric portion 17 is formed of a dielectric such as quartz. The dielectric portion 17 can also support the substrate support 16.

[0034] The substrate support 16 is configured in the chamber 10 to support the substrate W placed thereon. The substrate W has a generally disk-shaped form. The substrate W is placed on the substrate support 16 with its center aligned with the axis AX. The substrate support 16 is also configured to support an edge ring ER. The edge ring ER has an annular shape. The edge ring ER is formed of a material selected according to the plasma processing performed in the plasma processing apparatus 1. The edge ring ER is formed, for example, of silicon or silicon carbide. The edge ring ER is placed on the substrate support 16 with its central axis aligned with the axis AX. The substrate W is disposed in the region on the substrate support 16 surrounded by the edge ring ER. That is, the edge ring ER is arranged to surround the substrate W. In addition, the outer edge portion of the edge ring ER may also be placed on the dielectric portion 17.

[0035] The substrate support 16 may also include a base 18 and an electrostatic chuck 20. The base 18 and the electrostatic chuck 20 are disposed in the chamber 10. The base 18 is formed of a conductive material such as aluminum and has a generally disc-shaped form. The central axis of the base 18 is axis AX.

[0036] A flow path 18f is formed in the base 18. Flow path 18f is for the heat exchange medium. The heat exchange medium is, for example, a refrigerant. Flow path 18f is connected to a heat exchange medium supply device 22. The supply device 22 is located outside the chamber 10. Flow path 18f receives the heat exchange medium supplied from the supply device 22. The heat exchange medium supplied to flow path 18f returns to the supply device 22.

[0037] An electrostatic chuck 20 is disposed on a base 18. The electrostatic chuck 20 may also be fixed to the base 18 via a bonding component 19 such as an adhesive. The electrostatic chuck 20 includes a first region 20R1 and a second region 20R2. The first region 20R1 is the region that holds the substrate W placed thereon and has a generally disc-shaped form. The central axis of the first region 20R1 is approximately aligned with the axis AX. The second region 20R2 is the region that holds the edge ring ER placed thereon. The second region 20R2 has a generally annular shape when viewed from above and extends circumferentially outward relative to the first region 20R1. Furthermore, the upper surface of the first region 20R1 extends at a position higher in the height direction than the upper surface of the second region 20R2.

[0038] The electrostatic chuck 20 has a body 20m and a chuck electrode 20a. The body 20m is formed of a dielectric such as aluminum oxide or aluminum nitride. The body 20m has a generally disc-shaped form. The central axis of the electrostatic chuck 20 and the body 20m is axis AX. The chuck electrode 20a is disposed in the body 20m in a first region 20R1. The chuck electrode 20a is a film formed of a conductive material. The chuck electrode 20a can have a generally circular planar shape. The center of the chuck electrode 20a can also be located on axis AX. The chuck electrode 20a is electrically connected to a DC power supply 50p via a switch 50s. When a voltage from the DC power supply 50p is applied to the chuck electrode 20a, an electrostatic attraction is generated between the electrostatic chuck 20 and the substrate W. By the generated electrostatic attraction, the substrate W is attracted by the electrostatic chuck 20 and held by the electrostatic chuck 20.

[0039] The electrostatic chuck 20 may also include chuck electrodes 20b and 20c. Chuck electrodes 20b and 20c are disposed within the body 20m in the second region 20R2. Chuck electrodes 20b and 20c are films formed of conductive material. Chuck electrodes 20b and 20c extend circumferentially around the axis AX. Chuck electrode 20c extends radially outward relative to chuck electrode 20b. Chuck electrodes 20b and 20c may each have an annular shape. Chuck electrode 20b is electrically connected to a DC power supply 51p via a switch 51s. Chuck electrode 20c is electrically connected to a DC power supply 52p via a switch 52s. When voltages from DC power supply 51p and DC power supply 52p are applied to chuck electrodes 20b and 20c respectively, electrostatic attraction is generated between the electrostatic chuck 20 and the edge ring ER. Through this generated electrostatic attraction, the edge ring ER is attracted by the electrostatic chuck 20 and held by it.

[0040] The plasma processing apparatus 1 also includes a ring electrode DR. The ring electrode DR extends radially outward relative to the edge ring ER. The ring electrode DR may have a generally ring-shaped configuration when viewed from above. Figure 2In this embodiment, the annular electrode DR extends to surround the edge ring ER. The annular electrode DR can be disposed on the dielectric portion 17. Figure 2 In this embodiment, the ring electrode DR is formed of a conductive material such as silicon, silicon carbide, nickel, or Hastelloy.

[0041] like Figure 1 As shown, the plasma processing apparatus 1 may also form a gas supply line 24. The gas supply line 24 supplies heat transfer gas, such as He gas, from the gas supply mechanism to the gap between the upper surface of the electrostatic chuck 20 and the back (lower surface) of the substrate W.

[0042] The plasma processing apparatus 1 also includes an upper electrode 30. The upper electrode 30 is disposed above the substrate support 16. The upper electrode 30, together with component 32, seals the upper opening of the chamber body 12. Component 32 is insulating. The upper electrode 30 is supported on the upper part of the chamber body 12 via component 32.

[0043] The upper electrode 30 may also include a top plate 34 and a support 36. The lower surface of the top plate 34 defines an internal space 10s. The top plate 34 provides a plurality of pores 34a. The plurality of pores 34a penetrate the top plate 34 in its thickness direction (vertical direction). The top plate 34 is formed, for example, of silicon. Alternatively, the top plate 34 may have a structure in which a plasma-resistant film is formed on the surface of an aluminum component. This film may be a ceramic film such as a film formed by anodizing or a film formed of yttrium oxide.

[0044] The support body 36 supports the top plate 34 in a freely detachable manner. The support body 36 is formed of a conductive material, such as aluminum alloy. A gas diffusion chamber 36a is formed within the support body 36. The support body 36 also forms a plurality of vents 36b. The plurality of vents 36b extend downward from the gas diffusion chamber 36a and communicate with the plurality of vents 34a respectively. The support body 36 also forms a gas inlet 36c. The gas inlet 36c is connected to the gas diffusion chamber 36a. The gas inlet 36c is connected to a gas supply pipe 38.

[0045] Gas supply pipe 38 is connected to gas source group 40 via valve group 41, flow controller group 42, and valve group 43. Gas source group 40, valve group 41, flow controller group 42, and valve group 43 constitute a gas supply unit. Gas source group 40 includes multiple gas sources. Valve group 41 and valve group 43 each include multiple valves (e.g., on / off valves). Flow controller group 42 includes multiple flow controllers. The multiple flow controllers in flow controller group 42 are either mass flow controllers or pressure-controlled flow controllers. The multiple gas sources in gas source group 40 are connected to gas supply pipe 38 via corresponding valves in valve group 41, corresponding flow controllers in flow controller group 42, and corresponding valves in valve group 43. The plasma processing device 1 can supply gas from one or more of the multiple gas sources in gas source group 40 to the internal space for 10 seconds at individually regulated flow rates.

[0046] The plasma processing apparatus 1 may also include a baffle member 48. The baffle member 48 extends between the dielectric section 17 and the sidewall of the chamber body 12. The baffle member 48 can be constructed, for example, by coating an aluminum component with a ceramic such as yttrium oxide. The baffle member 48 forms a plurality of through holes. The space above and below the baffle member 48 is connected via the plurality of through holes in the baffle member 48.

[0047] The plasma processing apparatus 1 may also include an exhaust device 50. The exhaust device 50 is connected to the bottom of the chamber body 12 via an exhaust pipe 52 below the baffle member 48. The exhaust device 50 has a pressure controller such as an automatic pressure control valve and a vacuum pump such as a turbomolecular pump, which can reduce the pressure in the internal space by 10 seconds.

[0048] like Figure 1 and Figure 2 As shown, the plasma processing apparatus 1 also includes a high-frequency power supply 61 (RF power supply). The high-frequency power supply 61 generates high-frequency electrical power RF (RF power) to be supplied to the high-frequency electrode for generating plasma above the substrate support 16. The high-frequency electrical power RF has a frequency in the range of 27 to 100 MHz, for example, 40 MHz or 60 MHz. In one embodiment, the high-frequency electrode is a base 18. That is, in one embodiment, the base 18 forms the lower electrode as the high-frequency electrode.

[0049] The high-frequency power supply 61 is connected to the base 18 via a matching adapter 61m. The matching adapter 61m has a matching circuit for matching the impedance of the load side (base 18 side) of the high-frequency power supply 61 with the output impedance of the high-frequency power supply 61. In one embodiment, the high-frequency power supply 61 may also be connected to the base 18 via the matching adapter 61m and a filter 61f. The filter 61f is a filter with frequency characteristics that selectively allow high-frequency electrical power RF to pass through, and has the characteristic of blocking or reducing the electrical bias energy described later. Alternatively, the high-frequency power supply 61 may not be connected to the high-frequency electrode of the substrate support 16, but may be electrically connected to the upper electrode 30. That is, in another embodiment, the high-frequency electrode may also be the upper electrode 30.

[0050] The plasma processing apparatus 1 also includes a bias power supply 62 (first bias power supply). The bias power supply 62 is electrically coupled to the bias electrodes of the substrate support 16, configured to generate an electrical bias energy BE applied to the bias electrodes of the substrate support 16. Figure 2 In this embodiment, the bias electrode of the substrate support 16 is the base 18. The electrical bias energy BE is used to introduce ions into the substrate W. The electrical bias energy BE has a bias frequency. The bias frequency can be different from or the same as the frequency of the high-frequency electrical power RF. The bias frequency can also be lower than the frequency of the high-frequency electrical power RF. In one embodiment, the bias frequency is a frequency in the range of 50 kHz to 27 MHz, for example, 400 kHz.

[0051] The following, with Figure 1 and Figure 2 Refer to together Figure 3 (a) and Figure 3 (b) Figure 3 (a) and Figure 3 Figures (b) represent examples of electrical bias energy supplied to the bias electrode and electrical bias energy supplied to the ring electrode, respectively.

[0052] In one embodiment, the bias power supply 62 (first bias power supply or first bias RF power supply) is as follows: Figure 3 As shown in (a), the electrical bias energy BE can generate high-frequency electrical power, namely high-frequency bias electrical power (first bias RF power). The high-frequency bias electrical power (and its voltage waveform) of the electrical bias energy BE is a sine wave with a bias frequency. The reciprocal of the bias frequency is the length of the period CP (repetition period).

[0053] The bias power supply 62 (first bias power supply or first bias RF power supply) supplies high-frequency bias power to the bias electrode via a matching converter 62m and a filter 62f. Figure 2In the embodiment, the base 18) is connected. The matching unit 62m has a matching circuit configured to match the impedance on the load side of the bias power supply 62 with the output impedance of the bias power supply 62. The filter 62f has a frequency characteristic that selectively allows electrical bias energy BE to pass through, and has the characteristic of blocking or reducing high-frequency electrical power RF.

[0054] In another embodiment, such as Figure 3 As shown in (b), the bias power supply 62 (first bias power supply or first voltage pulse power supply) can also be configured to periodically apply voltage pulses, which are electrical bias energy BE, to the bias electrode (in Figure 2 In the embodiment, this is base 18). That is, the electrical bias energy BE can be a first DC pulse signal or a sequence of DC voltage pulses. The voltage pulses are applied to the bias electrode at time intervals (i.e., period CP) that are the reciprocal of the bias frequency. Figure 2 In the embodiment, this is base 18). The voltage pulse can be a negative voltage pulse or a negative DC voltage pulse. The voltage pulse can also have any waveform such as a triangular wave or a rectangular wave.

[0055] The plasma processing apparatus 1 may further include a high-frequency power supply 63 (RF power supply). The high-frequency power supply 63 generates high-frequency electrical power RF2 (RF power) to generate plasma above the substrate support 16. The high-frequency electrical power RF2 can have the same frequency as the high-frequency electrical power RF. The high-frequency power supply 63 is electrically connected to the ring electrode DR via a matching unit 63m and a filter 63f. The matching unit 63m has a matching circuit configured to match the impedance on the load side of the high-frequency power supply 63 with the output impedance of the high-frequency power supply 63. The filter 63f has the characteristic of selectively allowing the high-frequency electrical power RF2 to pass through, and has the characteristic of blocking or reducing the electrical bias energy BE2 (described later).

[0056] The plasma processing apparatus 1 also includes a bias power supply 64 (a second bias power supply). The bias power supply 64 is electrically coupled to the ring electrode DR and is configured to generate an electrical bias energy BE2 applied to the ring electrode DR. The electrical bias energy BE2 has the same bias frequency as the bias frequency of the electrical bias energy BE.

[0057] like Figure 3As shown in (a), the electrical bias energy BE2, like the electrical bias energy BE, can also be a high-frequency bias power (second bias RF power). In this case, the bias power supply 64 (second bias power supply or second bias RF power supply) is connected to the ring electrode DR via a matching circuit 64m and a filter 64f. The matching circuit 64m has a matching circuit configured to match the impedance on the load side of the bias power supply 64 with the output impedance of the bias power supply 64. The filter 64f has a frequency characteristic that selectively allows the electrical bias energy BE2 to pass through, and has the characteristic of blocking or reducing the high-frequency power RF2.

[0058] like Figure 3 As shown in (b), the electrical bias energy BE2 can also be a sequence of voltage pulses, similar to the electrical bias energy BE. That is, the electrical bias energy BE2 generated by the bias power supply 64 (the second bias power supply or the second voltage pulse power supply) can be a second DC pulse signal or a sequence of DC voltage pulses. The voltage pulses of the electrical bias energy BE2 are periodically applied to the ring electrode DR at time intervals (i.e., period CP) that are the reciprocal of the bias frequency. The voltage pulses can be negative voltage pulses or negative DC voltage pulses. The voltage pulses can also have arbitrary waveforms such as triangular waves, rectangular waves, etc.

[0059] like Figure 3 (a) and Figure 3 As shown in (b), one cycle (cycle CP or repetition cycle) of the electrical bias energy BE consists of a positive phase period PP (second period) and a negative phase period PN (first period). Furthermore, one cycle (cycle CP or repetition cycle) of the electrical bias energy BE2 consists of a positive phase period PP (fourth period) and a negative phase period PN (third period). During the negative phase period PN, the electrical bias energies BE and BE2 each have a voltage lower than their average voltage (average voltage of the electrical bias energy) within one cycle (cycle CP). During the positive phase period PP, the electrical bias energies BE and BE2 each have a voltage higher than their average voltage within one cycle (cycle CP).

[0060] The negative phase period PN of the electrical bias energy BE2 generated by bias power supply 64 at least partially overlaps with the negative phase period PN of the electrical bias energy BE generated by bias power supply 62. For example... Figure 3 (a) and Figure 3 As shown in (b), the negative phase period PN of the electrical bias energy BE2 can also be consistent with the negative phase period PN of the electrical bias energy BE. That is, the phase of the electrical bias energy BE2 can also be synchronized with the phase of the electrical bias energy BE.

[0061] Furthermore, when the electrical bias energies BE and BE2 are the first and second bias RF powers, respectively, the first and second power levels of the first and second bias RF powers can be the same or different from each other. The second power level can be larger or smaller than the first power level.

[0062] When the electrical bias energy BE is a first voltage pulse signal, the first voltage pulse signal has a first level in a first period and a second level in a second period. The absolute value of the first level is greater than the absolute value of the second level. Furthermore, when the electrical bias energy BE2 is a second voltage pulse signal, the second voltage pulse signal has a third level in a third period and a fourth level in a fourth period. The absolute value of the third level is greater than the absolute value of the fourth level. The first and third levels can be negative. The third level can be the same as the first level, and the fourth level can be the same as the second level. Alternatively, the third level can also be different from the first level.

[0063] When the electrical bias energies BE and BE2 are the first and second voltage pulse signals, respectively, the first period can have the same length as the second period. Alternatively, the first period can have a different length than the second period. The length of the first period can be longer or shorter than the length of the second period.

[0064] In one embodiment, the plasma processing apparatus 1 may further include a control unit MC. The control unit MC is a computer including a processor, storage device, input device, display device, etc., and controls various parts of the plasma processing apparatus 1. Specifically, the control unit MC executes a control program stored in the storage device and controls various parts of the plasma processing apparatus 1 based on scheme data stored in the storage device. Through the control of the control unit MC, the processing specified by the scheme data is performed in the plasma processing apparatus 1.

[0065] During the positive phase period PP, the sheath layer on the substrate W is thinner, resulting in lower impedance between the substrate W and the plasma. Consequently, more high-frequency electrical power RF couples with the plasma above the substrate W. Conversely, during the negative phase period PN, the sheath layer on the substrate W is thicker, leading to higher impedance between the substrate W and the plasma. In the plasma processing apparatus 1, during the negative phase period PN, to increase the thickness of the sheath layer on the radially outer side of the edge of the substrate W and thus improve the impedance between the annular electrode DR and the plasma, an electrical bias energy BE2 is supplied to the annular electrode DR. Therefore, the high-frequency electrical power RF coupling with the plasma above the annular electrode DR during the negative phase period PN can be suppressed. As a result, variations in the radial expansion of the plasma within the period CP of the electrical bias energy BE supplied to the bias electrode can be suppressed. Furthermore, anomalies in the shape formed at and near the edge of the substrate W can be suppressed by etching.

[0066] The following is for reference Figure 4 . Figure 4 This is a diagram illustrating a substrate support and multiple power supplies in another exemplary embodiment. Hereinafter, [the following will describe...] Figure 4 The implementation method is relative to Figure 2 The differences in the implementation methods will be explained.

[0067] Figure 4 The substrate support 16B of the embodiment can be used as a substrate support for the plasma processing apparatus 1. Figure 4 In this embodiment, the annular electrode DRB extends radially outward relative to the edge ring ER. The annular electrode DRB can have a generally annular shape when viewed from above. The annular electrode DRB extends in a manner surrounding the edge ring ER and is disposed on the dielectric portion 17. The annular electrode DRB is formed of a conductive material such as silicon or silicon carbide.

[0068] In the substrate support 16B, the auxiliary electrode 71 is disposed in the dielectric portion 17 below the annular electrode DRB. The auxiliary electrode 71 may also have an annular shape, extending circumferentially around the axis AX. Other structures of the substrate support 16B are similar to... Figure 2 The corresponding structure of the substrate support 16 shown is the same. Figure 4 In this embodiment, the high-frequency power supply 63 and the bias power supply 64 are electrically connected to the auxiliary electrode 71 and electrically coupled to the ring electrode DRB via the auxiliary electrode 71.

[0069] The following is for reference Figure 5 . Figure 5 This is a diagram illustrating another exemplary embodiment of the substrate support and multiple power supplies. The following will describe... Figure 4 The implementation method is relative to Figure 3 The differences in the implementation methods will be explained.

[0070] Figure 5 The substrate support 16C of the embodiment can be used as a substrate support for the plasma processing apparatus 1. Figure 5 In this embodiment, the annular member 72 extends radially outward relative to the edge ring ER. The annular member 72 can have a generally annular shape when viewed from above. The annular member 72 extends in a manner surrounding the edge ring ER and is disposed on the dielectric portion 17. The annular member 72 is formed of a dielectric such as quartz or alumina.

[0071] In substrate support 16C, an annular electrode DRC is disposed within an annular component 72. The annular electrode DRC has an annular shape and may extend circumferentially around the axis AX. Other structural features of substrate support 16C are the same as the corresponding structure of substrate support 16B. Figure 5In this embodiment, the high-frequency power supply 63 and the bias power supply 64 are electrically connected to the ring electrode DRC. Alternatively, the ring electrode DRC may also be located in a region away from the ring component 72, such as in the dielectric section 17.

[0072] The following is for reference Figure 6 . Figure 6 This is a diagram illustrating another exemplary embodiment of the substrate support and multiple power supplies. The following will describe... Figure 6 The implementation method is relative to Figure 2 The differences in the implementation methods will be explained.

[0073] exist Figure 6 In this embodiment, the plasma processing apparatus 1 further includes a bias power supply 66. The bias power supply 66 is electrically coupled to the edge ring ER and is configured to generate an electrical bias energy BE3 to be supplied to the edge ring ER. The electrical bias energy BE3 may also have the same bias frequency as the bias frequency of the electrical bias energy BE.

[0074] The electrical bias energy BE3 can also be a high-frequency bias power (third bias RF power), similar to the electrical bias energy BE. In this case, the bias power supply 66 is connected to the edge ring ER via a matching circuit 66m and a filter 66f. The matching circuit 66m has a matching circuit configured to match the impedance on the load side of the bias power supply 66 with the output impedance of the bias power supply 66 (third bias RF power supply). The filter 66f has a frequency characteristic that selectively allows the electrical bias energy BE3 to pass through, and has the characteristic of blocking or reducing the high-frequency power RF.

[0075] Alternatively, the electrical bias energy BE3 can also be a sequence of voltage pulses or a third voltage pulse signal, similar to the electrical bias energy BE. The voltage pulses of the electrical bias energy BE3 are applied periodically to the ring electrode DR at time intervals (i.e., the period CP) that are the reciprocal of the bias frequency.

[0076] according to Figure 6 In this implementation, the electrical bias energy supplied to the edge ring ER can be controlled independently, as can the thickness of the sheath layer on the edge ring ER. Additionally, in each of the substrate support 16B and substrate support 16C, the bias power supply 66 can also be electrically coupled to the edge ring ER.

[0077] The following is for reference Figure 7 . Figure 7 This is a diagram illustrating another exemplary embodiment of the substrate support and multiple power supplies. The following will describe... Figure 7 The implementation method is relative to Figure 6 The differences in the implementation methods will be explained.

[0078] Figure 7The substrate support 16D shown can be used as a substrate support for the plasma processing apparatus 1. The electrostatic chuck 20D of the substrate support 16D also includes an electrode 20e. Other structural features of the substrate support 16D are similar to those of the previous model. Figure 6 The corresponding structure of the substrate support 16 shown is the same. The electrode 20e is a film formed of a conductive material and is disposed within the body 20m in the second region 20R2. The electrode 20e can have an annular shape or extend circumferentially around the axis AX. Figure 7 In this embodiment, the bias power supply 66 is electrically connected to the electrode 20e and coupled to the edge ring ER capacitor via the electrode 20e.

[0079] Additionally, in each of substrate support 16B and substrate support 16C, the bias power supply 66 can also be electrically coupled to the edge ring ER via electrode 20e. Furthermore, the bias power supply 66 can also be electrically connected to chuck electrodes 20b and chuck electrodes 20c. In this case, the substrate support may not include electrode 20e.

[0080] The following is for reference Figure 8 . Figure 8 This is a diagram illustrating another exemplary embodiment of the substrate support and multiple power supplies. The following will describe... Figure 8 The implementation method is relative to Figure 7 The differences in the implementation methods will be explained.

[0081] Figure 8 The substrate support 16E shown can be used as a substrate support for the plasma processing apparatus 1. The electrostatic chuck 20E of the substrate support 16E also includes an electrode 20f. The other structures of the substrate support 16E are the same as the corresponding structure of the substrate support 16D. The electrode 20f is a film formed of a conductive material and is disposed in the body 20m within the first region 20R1. The electrode 20f may also have a generally circular shape, and its center may be located on the axis AX. Figure 8 In this embodiment, the bias power supply 62 is electrically connected to the electrode 20f. That is, the electrode 20f forms a bias electrode in the substrate support 16E.

[0082] Alternatively, in each of substrate support 16B and substrate support 16C, the bias power supply 62 may also be electrically connected to electrode 20f. Alternatively, the bias power supply 62 may also be electrically connected to chuck electrode 20a. In this case, chuck electrode 20a constitutes the bias electrode. In this case, the substrate support may not include electrode 20f.

[0083] The following is for reference Figure 9 . Figure 9 This is a diagram illustrating another exemplary embodiment of the substrate support and multiple power supplies. The following will describe... Figure 9 The implementation method is relative to Figure 8 The differences in the implementation methods will be explained.

[0084] exist Figure 9 In this embodiment, the high-frequency power supply 61 and the bias power supply 62 are electrically connected to the electrode 20f. That is, the electrode 20f constitutes the high-frequency electrode and the bias electrode in the substrate support 16E.

[0085] In addition, Figure 9 In this embodiment, the plasma processing apparatus 1 further includes a high-frequency power supply 65. The high-frequency power supply 65 generates high-frequency electrical power RF3 (RF power) to generate plasma above the substrate support 16. The high-frequency electrical power RF3 can have the same frequency as the high-frequency electrical power RF. The high-frequency power supply 65 is electrically connected to the electrode 20e via a matching device 65m and a filter 65f. The matching device 65m has a matching circuit configured to match the impedance on the load side of the high-frequency power supply 65 with the output impedance of the high-frequency power supply 65. The filter 65f has the characteristic of selectively allowing the high-frequency electrical power RF3 to pass through, and has the characteristic of blocking or reducing the electrical bias energy BE3.

[0086] Additionally, in each of substrate support 16B and substrate support 16C, a high-frequency power supply 61 and a bias power supply 62 may also be electrically connected to electrode 20f. Furthermore, in each of substrate support 16B and substrate support 16C, a high-frequency power supply 65 and a bias power supply 66 may also be electrically connected to electrode 20e.

[0087] The following is for reference Figure 10 . Figure 10 This is a diagram illustrating another exemplary embodiment of the substrate support and multiple power supplies. The following will describe... Figure 10 The implementation method is relative to Figure 2 The differences in the implementation methods will be explained.

[0088] exist Figure 10 In this embodiment, the plasma processing apparatus 1 does not include a high-frequency power supply 63 and a bias power supply 64. Figure 10 In the implementation, the high-frequency power supply 61, in addition to being connected to the high-frequency electrodes of the substrate support 16 (in... Figure 10 In the embodiment, besides the base 18, it is also electrically connected to the annular electrode DR. Figure 10 In this embodiment, high-frequency electrical power RF is distributed to the high-frequency electrode and the ring electrode DR of the substrate support 16. The distribution ratio of the high-frequency electrical power RF between the high-frequency electrode and the ring electrode DR of the substrate support 16 is adjusted by an impedance regulator 61i. The impedance regulator 61i is connected between a node on the electrical path connecting the high-frequency power supply 61 to the high-frequency electrode of the substrate support 16 and the ring electrode DR. The impedance regulator 61i has a variable impedance. The impedance regulator 61i may also include, for example, a variable capacitor.

[0089] In addition, Figure 10 In the implementation, the bias power supply 62, in addition to being connected to the bias electrode of the substrate support 16 (in... Figure 10 In the embodiment, besides the base 18, it is also electrically connected to the annular electrode DR. That is, in Figure 10 In this implementation, a single bias RF power supply 62 serves as both a first bias RF power supply and a second bias RF power supply. Figure 10 In this embodiment, the electrical bias energy BE is distributed to the bias electrode and the ring electrode DR of the substrate support 16. The distribution ratio of the electrical bias energy BE between the bias electrode and the ring electrode DR of the substrate support 16 is adjusted by an impedance regulator 62i. The impedance regulator 62i is connected between a node on the electrical path connecting the bias power supply 62 to the bias electrode of the substrate support 16 and the ring electrode DR. The impedance regulator 62i has a variable impedance. The impedance regulator 62i may also include, for example, a variable capacitor.

[0090] exist Figure 10 In this embodiment, the electrical bias energy BE from a single bias power supply 62 is distributed to the bias electrode and the ring electrode DR of the substrate support 16. Therefore, the phase of the electrical bias energy applied to the bias electrode of the substrate support 16 is synchronized with the phase of the electrical bias energy applied to the ring electrode DR. Thus, the high-frequency electrical power RF coupled to the plasma above the ring electrode DR in the PN during the negative phase can be suppressed. As a result, variations in the radial expansion of the plasma during the period of the electrical bias energy BE supplied to the bias electrode of the substrate support 16 can be suppressed.

[0091] In addition, with Figure 10 Similarly, in the substrate support 16B, the high-frequency power RF from the high-frequency power supply 61 can also be distributed to the high-frequency electrodes and the ring electrode DRB of the substrate support 16. Additionally, with... Figure 10 Similarly, in the implementation of the substrate support 16B, the electrical bias energy BE from the bias power supply 62 can also be distributed to the bias electrode and the ring electrode DRB of the substrate support 16. Additionally, with... Figure 10 Similarly, in the substrate support 16C, the high-frequency power RF from the high-frequency power supply 61 can also be distributed to the high-frequency electrodes and the ring electrode DRC of the substrate support 16. Additionally, with... Figure 10 Similarly, in the substrate support 16C, the electrical bias energy BE from the bias power supply 62 can also be distributed to the bias electrode and the ring electrode DRC of the substrate support 16.

[0092] The following is for reference Figure 11 . Figure 11This is a diagram illustrating another exemplary embodiment of the substrate support and multiple power supplies. The following will describe... Figure 11 The implementation method is relative to Figure 10 The differences in the implementation methods will be explained.

[0093] exist Figure 11 In the illustrated embodiment, the plasma processing apparatus 1 includes a substrate support 16D. The substrate support 16D and... Figure 7 The substrate support 16D shown is the same. Figure 11 In the illustrated embodiment, the bias power supply 62 is also electrically connected to electrode 20e. Figure 11 In this embodiment, the electrical bias energy BE is distributed to the bias electrode, the ring electrode DR, and the electrode 20e of the substrate support 16. The distribution ratio of the electrical bias energy BE to the bias electrode, the ring electrode DR, and the electrode 20e of the substrate support 16 is adjusted by impedance regulators 62i and 62j. Impedance regulator 62j is connected between a node on the electrical path connecting the bias power supply 62 to the bias electrode of the substrate support 16 and the electrode 20e. Impedance regulator 62j has a variable impedance. Impedance regulator 62j may also include, for example, a variable capacitor.

[0094] In addition, with Figure 11 Similarly, in the substrate support 16B, the high-frequency power RF from the high-frequency power supply 61 can also be distributed to the high-frequency electrodes and the ring electrode DRB of the substrate support 16. Additionally, with... Figure 11 Similarly, in the implementation of the substrate support 16B, the electrical bias energy BE from the bias power supply 62 can also be distributed to the bias electrode, the ring electrode DRB, and the electrode 20e of the substrate support 16. Additionally, with... Figure 11 Similarly, in the substrate support 16C, the high-frequency power RF from the high-frequency power supply 61 can also be distributed to the high-frequency electrodes and the ring electrode DRC of the substrate support 16. Additionally, with... Figure 11 Similarly, in the substrate support 16C, the electrical bias energy BE from the bias power supply 62 can also be distributed to the bias electrode, the ring electrode DRC, and the electrode 20e of the substrate support 16.

[0095] The following is for reference Figure 12 . Figure 12 This is a diagram illustrating another exemplary embodiment of the substrate support and multiple power supplies. The following will describe... Figure 12 The implementation method is relative to Figure 11 The differences in the implementation methods will be explained.

[0096] exist Figure 12In the illustrated embodiment, the plasma processing apparatus 1 includes a substrate support 16E. The substrate support 16E and... Figure 8 The substrate support 16E shown is the same. Figure 12 In the embodiment shown, the bias power supply 62 is electrically connected to the electrode 20f.

[0097] In addition, with Figure 12 Similarly, in the substrate support 16B, the high-frequency power RF from the high-frequency power supply 61 can also be distributed to the high-frequency electrodes and the ring electrode DRB of the substrate support 16. Additionally, with... Figure 12 Similarly, in the substrate support 16B, the electrical bias energy BE from the bias power supply 62 can also be distributed to electrode 20f, the ring electrode DRB, and electrode 20e. Additionally, with... Figure 12 Similarly, in the substrate support 16C, the high-frequency power RF from the high-frequency power supply 61 can also be distributed to the high-frequency electrodes and the ring electrode DRC of the substrate support 16. Additionally, with... Figure 11 Similarly, in the substrate support 16C, the electrical bias energy BE from the bias power supply 62 can also be distributed to the electrode 20f, the ring electrode DRC, and the electrode 20e.

[0098] The following is for reference Figure 13 . Figure 13 This is a diagram illustrating another exemplary embodiment of the substrate support and multiple power supplies. The following will describe... Figure 13 The implementation method is relative to Figure 12 The differences in the implementation methods will be explained.

[0099] exist Figure 13 In the illustrated embodiment, the high-frequency power supply 61 is electrically connected to electrode 20f and also electrically connected to electrode 20e. Figure 13 In this embodiment, high-frequency electrical power RF is distributed to electrode 20f, ring electrode DR, and electrode 20e. The distribution ratio of the high-frequency electrical power RF to electrode 20f, ring electrode DR, and electrode 20e is adjusted by impedance regulators 61i and 61j. Impedance regulator 61j is connected between a node on the electrical path connecting the high-frequency power supply 61 to electrode 20f and electrode 20e. Impedance regulator 61j has a variable impedance. Impedance regulator 61j may also include, for example, a variable capacitor.

[0100] In addition, with Figure 13 Similarly, in the substrate support 16B, the high-frequency electrical power RF from the high-frequency power supply 61 can also be distributed to electrode 20f, the ring electrode DRB, and electrode 20e. Additionally, with... Figure 13Similarly, in the substrate support 16B, the electrical bias energy BE from the bias power supply 62 can also be distributed to electrode 20f, the ring electrode DRB, and electrode 20e. Additionally, with... Figure 13 Similarly, in the substrate support 16C, the high-frequency electrical power RF from the high-frequency power supply 61 can also be distributed to electrode 20f, the ring electrode DRC, and electrode 20e. Additionally, with... Figure 13 Similarly, in the substrate support 16C, the electrical bias energy BE from the bias power supply 62 can also be distributed to the electrode 20f, the ring electrode DRC, and the electrode 20e.

[0101] The following is for reference Figure 14 . Figure 14 This is a flowchart illustrating an exemplary embodiment of a plasma processing method. Figure 14 The plasma processing method shown (hereinafter referred to as "method MT") can be performed using any of the various plasma processing apparatuses described above.

[0102] Method MT begins with step STa. In step STa, the substrate W is placed on the substrate support of the plasma processing apparatus 1. In step STa, the substrate W is positioned within the region surrounded by the edge ring ER. Method MT also includes steps STb to STd. Steps STb to STd are performed with the substrate W placed on the substrate support.

[0103] In step STb, high-frequency electrical power RF is supplied to generate plasma above the substrate support. Furthermore, in the plasma processing apparatus 1 including high-frequency power supply 63, high-frequency electrical power RF2 may also be supplied. Additionally, in the plasma processing apparatus 1 including high-frequency power supply 65, high-frequency electrical power RF3 may also be supplied. In method MT, steps STc and STd are performed during step STb, i.e., during the period when plasma is generated within chamber 10.

[0104] In step STc, electrical bias energy BE is supplied to the bias electrode of the substrate support (base 18, electrode 20f, or chuck electrode 20a). In step STd, electrical bias energy (BE or BE2) is supplied to the ring electrode (DR, DRB, or DRC).

[0105] In step STd of one embodiment, an electrical bias energy BE2 is supplied to the ring electrode. The negative phase period PN of the electrical bias energy BE2 at least partially overlaps with the negative phase period PN of the electrical bias energy BE supplied to the bias electrode of the substrate support. Alternatively, the negative phase period PN of the electrical bias energy BE2 may coincide with the negative phase period PN of the electrical bias energy BE supplied to the bias electrode of the substrate support. The phase of the electrical bias energy BE2 may also be synchronized with the phase of the electrical bias energy BE supplied to the bias electrode of the substrate support.

[0106] In steps STc and STd of another embodiment, the electrical bias energy BE from a single bias power supply 62 is distributed to the bias electrode and the ring electrode of the substrate support. Therefore, the negative phase period PN of the electrical bias energy supplied to the ring electrode coincides with the negative phase period PN of the electrical bias energy supplied to the bias electrode of the substrate support. That is, the phase of the electrical bias energy supplied to the ring electrode coincides with the phase of the electrical bias energy supplied to the bias electrode of the substrate support.

[0107] Hereinafter, various exemplary embodiments included in this disclosure will be described in [E1] to [E12] and [F1] to [F19].

[0108] [E1]

[0109] A plasma processing apparatus comprising:

[0110] chamber;

[0111] A substrate support, disposed within the cavity, is configured to support a substrate placed thereon and an edge ring placed thereon in a manner surrounding the substrate, and includes a bias electrode.

[0112] A high-frequency power supply, configured to generate high-frequency electrical power in order to generate plasma above the substrate support;

[0113] An annular electrode that extends radially outward relative to the edge ring;

[0114] A first bias power supply, electrically coupled to the bias electrode; and

[0115] A second bias power supply is electrically coupled to the ring electrode.

[0116] The first bias power supply and the second bias power supply are respectively configured to generate electrical bias energy with a bias frequency.

[0117] One cycle of the electrical bias energy, having a time length that is the reciprocal of the bias frequency, includes a negative phase period during which the electrical bias energy has a voltage lower than its average voltage within that one cycle.

[0118] The negative phase period of the electrical bias energy generated by the second bias power source overlaps at least partially with the negative phase period of the electrical bias energy generated by the first bias power source.

[0119] One cycle of the electrical bias energy includes the aforementioned negative phase period and positive phase period. During the positive phase period, the electrical bias energy has a voltage greater than its average voltage over one cycle. During the positive phase period, the sheath thickness on the substrate is small, and the impedance between the substrate and the plasma is small, thus a relatively large amount of high-frequency electrical power couples with the plasma above the substrate. On the other hand, during the negative phase period, the sheath thickness on the substrate is large, and the impedance between the substrate and the plasma is large. In the above embodiment, in order to increase the thickness of the sheath on the radially outer edge of the substrate during the negative phase period and increase the impedance between the annular electrode and the plasma, electrical bias energy generated by the second bias power supply is supplied to the annular electrode. Therefore, during the negative phase period, the high-frequency electrical power coupling with the plasma above the annular electrode can be suppressed. As a result, according to the above embodiment, the variation in the radial expansion of the plasma during the cycle of the electrical bias energy supplied to the bias electrode can be suppressed.

[0120] [E2]

[0121] The plasma processing apparatus as described in [E1], wherein,

[0122] The phase of the electrical bias energy generated by the second bias power supply is synchronized with the phase of the electrical bias energy generated by the first bias power supply.

[0123] [E3]

[0124] The plasma processing apparatus as described in [E1] or [E2], wherein,

[0125] The electrical bias energy generated by the first bias power supply and the second bias power supply is either high-frequency electrical power having the bias frequency, or voltage pulses generated periodically at time intervals that are the reciprocal of the bias frequency.

[0126] [E4]

[0127] The plasma processing apparatus as described in any one of [E1] to [E3], wherein,

[0128] The first bias power supply, the second bias power supply, or other bias power supply that generates electrical bias energy having the bias frequency is electrically coupled to the edge ring.

[0129] [E5]

[0130] A plasma processing apparatus comprising:

[0131] chamber;

[0132] A substrate support, disposed within the cavity, is configured to support a substrate placed thereon and an edge ring placed thereon in a manner surrounding the substrate, and includes a bias electrode.

[0133] A high-frequency power supply, configured to generate high-frequency electrical power in order to generate plasma above the substrate support;

[0134] An annular electrode, which extends radially outward relative to the edge ring; and

[0135] A bias power supply that generates electrical bias energy with a bias frequency and is electrically coupled to the bias electrode and the ring electrode such that the electrical bias energy is distributed to the bias electrode and the ring electrode.

[0136] In the above embodiment, the electrical bias energy from a single bias power supply is distributed to the bias electrode and the ring electrode of the substrate support. Therefore, the phase of the electrical bias energy applied to the bias electrode of the substrate support is synchronized with the phase of the electrical bias energy applied to the ring electrode. Thus, high-frequency electrical power coupled to the plasma above the ring electrode during the negative phase can be suppressed. As a result, according to the above embodiment, variations in the radial expansion of the plasma within the period of the electrical bias energy supplied to the bias electrode can be suppressed.

[0137] [E6]

[0138] The plasma processing apparatus as described in [E5], wherein,

[0139] The electrical bias energy is either high-frequency electrical power having the bias frequency, or pulses of voltage generated periodically at time intervals that are the reciprocal of the bias frequency.

[0140] [E7]

[0141] The plasma processing apparatus as described in [E5] or [E6], wherein,

[0142] The bias power supply or other bias power supply that generates electrical bias energy with the bias frequency is electrically coupled to the edge ring.

[0143] [E8]

[0144] The plasma processing apparatus as described in any one of [E1] to [E7], wherein,

[0145] The high-frequency power supply is electrically connected to the bias electrode or other electrodes disposed in the substrate support, and supplies the high-frequency power to the bias electrode or the other electrodes.

[0146] [E9]

[0147] The plasma processing apparatus as described in any one of [E1] to [E8], wherein,

[0148] In order to generate plasma above the high-frequency power supply or the substrate support, the high-frequency power supply is configured to generate high-frequency electrical power and is electrically coupled to the annular electrode.

[0149] [E10]

[0150] The plasma processing apparatus as described in any one of [E1] to [E9], wherein,

[0151] The annular electrode extends in a manner that surrounds the edge ring.

[0152] [E11]

[0153] A plasma processing method, comprising:

[0154] (a) The step of placing a substrate on a substrate support, wherein the substrate support is disposed within a cavity of a plasma processing apparatus and includes a bias electrode, the substrate being disposed in a region surrounded by an edge ring disposed on the substrate support;

[0155] (b) The step of supplying high-frequency electrical power to generate plasma above the substrate support;

[0156] (c) the step of supplying electrical bias energy from a first bias power source to the bias electrode; and

[0157] (d) The step of supplying electrical bias energy from a second bias power source to a ring electrode that extends radially outward from the edge ring.

[0158] The electrical bias energy generated by the first bias power supply and the second bias power supply respectively has a bias frequency.

[0159] One cycle of the electrical bias energy generated by the first bias power supply and the second bias power supply respectively includes a negative phase period in which the electrical bias energy has a voltage lower than its average voltage within the one cycle, and the negative phase period has a time length that is the reciprocal of the bias frequency.

[0160] The negative phase period of the electrical bias energy generated by the second bias power source overlaps at least partially with the negative phase period of the electrical bias energy generated by the first bias power source.

[0161] [E12]

[0162] A plasma processing method, comprising:

[0163] (a) The step of placing a substrate on a substrate support, wherein the substrate support is disposed within a cavity of a plasma processing apparatus and includes a bias electrode, the substrate being disposed in a region surrounded by an edge ring disposed on the substrate support;

[0164] (b) The step of supplying high-frequency electrical power to generate plasma above the substrate support;

[0165] (c) the step of supplying electrical bias energy to the bias electrode; and

[0166] (d) The step of supplying electrical bias energy to a ring electrode that extends radially outward from the edge ring.

[0167] In (c) and (d), the electrical bias energy generated by a single bias power source is distributed to the bias electrode and the ring electrode.

[0168] [F1]

[0169] A plasma processing apparatus comprising:

[0170] Plasma processing chamber,

[0171] A substrate support, disposed within the plasma processing chamber, includes a bias electrode;

[0172] An RF power supply configured to generate RF electrical power in order to generate plasma within the plasma processing chamber;

[0173] An edge ring configured to surround the substrate on the substrate support;

[0174] A ring electrode configured to surround the edge ring;

[0175] A first bias RF power supply is configured to supply a first bias RF power to the bias electrodes, the first bias RF power having a first frequency and a first power level; and

[0176] The second bias RF power supply is configured to supply a second bias RF power to the ring electrode. The second bias RF power has the first frequency and a second power level, and the second bias RF power is synchronized with the first bias RF power.

[0177] [F2]

[0178] The plasma processing apparatus as described in [F1], wherein,

[0179] The second power stage is the same as the first power stage.

[0180] [F3]

[0181] The plasma processing apparatus as described in [F1], wherein,

[0182] The second power stage is different from the first power stage.

[0183] [F4]

[0184] The plasma processing apparatus as described in [F3], wherein,

[0185] The second power stage is larger than the first power stage.

[0186] [F5]

[0187] The plasma processing apparatus as described in [F3], wherein,

[0188] The second power stage is smaller than the first power stage.

[0189] [F6]

[0190] The plasma processing apparatus as described in any one of [F1] to [F5], wherein,

[0191] A single bias RF power supply serves as both the first bias RF power supply and the second bias RF power supply.

[0192] [F7]

[0193] A plasma processing apparatus comprising:

[0194] Plasma processing chamber;

[0195] A substrate support, disposed within the plasma processing chamber, includes a bias electrode;

[0196] An RF power supply configured to generate RF electrical power in order to generate plasma within the plasma processing chamber;

[0197] An edge ring configured to surround the substrate on the substrate support;

[0198] A ring electrode configured to surround the edge ring;

[0199] A first voltage pulse power supply is configured to apply a first voltage pulse signal to the bias electrode. The first voltage pulse signal has a first level lower than a first average voltage during a first period of repetition, and a second level higher than the first average voltage during a second period of repetition. The absolute value of the first level is greater than the absolute value of the second level.

[0200] The second voltage pulse power supply is configured to apply a second voltage pulse signal to the ring electrode. The second voltage pulse signal has a third level during the first period that is lower than the second average voltage of the second voltage pulse signal, and a fourth level during the second period that is higher than the second average voltage. The absolute value of the third level is greater than the absolute value of the fourth level.

[0201] [F8]

[0202] The plasma processing apparatus as described in [F7], wherein,

[0203] The first voltage level and the third voltage level have negative polarity.

[0204] [F9]

[0205] The plasma processing apparatus as described in [F7] or [F8], wherein,

[0206] The third level is the same as the first level, and the fourth level is the same as the second level.

[0207] [F10]

[0208] The plasma processing apparatus as described in [F9], wherein,

[0209] A single voltage pulse power supply serves as both the first voltage pulse power supply and the second voltage pulse power supply.

[0210] [F11]

[0211] The plasma processing apparatus as described in [F7] or [F8], wherein,

[0212] The third level is different from the first level.

[0213] [F12]

[0214] The plasma processing apparatus as described in any one of [F7] to [F11], wherein,

[0215] The first period has the same length as the second period.

[0216] [F13]

[0217] The plasma processing apparatus as described in any one of [F7] to [F11], wherein,

[0218] The first period has a length different from that of the second period.

[0219] [F14]

[0220] The plasma processing apparatus as described in any one of [F7] to [F11], wherein,

[0221] The first period is longer than the second period.

[0222] [F15]

[0223] The plasma processing apparatus as described in any one of [F7] to [F11], wherein,

[0224] The first period is shorter than the second period.

[0225] [F16]

[0226] A plasma processing apparatus comprising:

[0227] chamber;

[0228] A substrate support, disposed within the cavity, includes a bias electrode;

[0229] An RF power supply configured to generate RF electrical power in order to generate plasma within the cavity;

[0230] An edge ring configured to surround the substrate on the substrate support;

[0231] A ring electrode configured to surround the edge ring;

[0232] A first bias power supply electrically connected to the bias electrode; and

[0233] The second bias power supply is electrically connected to the ring electrode.

[0234] The first bias power supply and the second bias power supply are respectively configured to generate electrical bias energy with a bias frequency.

[0235] One cycle of the electrical bias energy, having a time length that is the reciprocal of the bias frequency, includes a negative phase period during which the electrical bias energy has a voltage lower than its average voltage over that one cycle.

[0236] The negative phase period of the electrical bias energy generated by the second bias power source overlaps at least partially with the negative phase period of the electrical bias energy generated by the first bias power source.

[0237] [F17]

[0238] The plasma processing apparatus as described in [F16], wherein,

[0239] The phase of the electrical bias energy generated by the second bias power supply is synchronized with the phase of the electrical bias energy generated by the first bias power supply.

[0240] [F18]

[0241] The plasma processing apparatus as described in [F16] or [F17], wherein,

[0242] The electrical bias energy generated by the first bias power supply and the second bias power supply is either RF power having the bias frequency or a sequence of DC voltage pulses generated periodically at time intervals that are the reciprocal of the bias frequency.

[0243] [F19]

[0244] The plasma processing apparatus as described in any one of [F16] to [F18], wherein,

[0245] The first bias power supply, the second bias power supply, or other bias power supply configured to generate electrical bias energy having the bias frequency are coupled to the edge ring.

[0246] The above descriptions illustrate various illustrative embodiments, but the embodiments are not limited to those described above. Various additions, omissions, substitutions, and modifications can be made. Furthermore, elements from different embodiments can be combined to form other embodiments.

[0247] Based on the above description, various embodiments of the present invention have been described in this specification for illustrative purposes, but various modifications can be made without departing from the scope and spirit of the invention. Therefore, the various embodiments disclosed in this specification are not intended to be limiting, and the true scope and spirit are indicated by the accompanying technical solutions.

Claims

1. A plasma processing device, characterized in that, include: Plasma processing chamber; A substrate support, disposed within the plasma processing chamber, includes a bias electrode; An RF power supply configured to generate RF electrical power in order to generate plasma within the plasma processing chamber; An edge ring configured to surround the substrate on the substrate support; A ring electrode configured to surround the edge ring; A first bias RF power supply is configured to supply a first bias RF power to the bias electrode, the first bias RF power having a first frequency and a first power level; and The second bias RF power supply is configured to supply a second bias RF power to the ring electrode. The second bias RF power has the first frequency and the second power level, and the second bias RF power is synchronized with the first bias RF power.

2. The plasma processing apparatus as described in claim 1, characterized in that: The second power stage is the same as the first power stage.

3. The plasma processing apparatus as described in claim 2, characterized in that: A single bias RF power supply serves as both the first bias RF power supply and the second bias RF power supply.

4. The plasma processing apparatus as described in claim 1, characterized in that: The second power stage is different from the first power stage.

5. The plasma processing apparatus as described in claim 4, characterized in that: The second power stage is larger than the first power stage.

6. The plasma processing apparatus as described in claim 4, characterized in that: The second power stage is smaller than the first power stage.

7. A plasma processing apparatus, characterized in that, include: Plasma processing chamber; A substrate support, disposed within the plasma processing chamber, includes a bias electrode; An RF power supply configured to generate RF electrical power in order to generate plasma within the plasma processing chamber; An edge ring configured to surround the substrate on the substrate support; A ring electrode configured to surround the edge ring; The first voltage pulse power supply is configured to apply a first voltage pulse signal to the bias electrode. The first voltage pulse signal has a first level lower than the first average voltage of the first voltage pulse signal during a first period of the repetition period, and has a second level higher than the first average voltage during a second period of the repetition period. The absolute value of the first level is greater than the absolute value of the second level. and The second voltage pulse power supply is configured to apply a second voltage pulse signal to the ring electrode. The second voltage pulse signal has a third level during the first period that is lower than the second average voltage of the second voltage pulse signal, and a fourth level during the second period that is higher than the second average voltage. The absolute value of the third level is greater than the absolute value of the fourth level.

8. The plasma processing apparatus as described in claim 7, characterized in that: The first voltage level and the third voltage level have negative polarity.

9. The plasma processing apparatus as described in claim 8, characterized in that: The third level is the same as the first level, and the fourth level is the same as the second level.

10. The plasma processing apparatus as described in claim 9, characterized in that: A single voltage pulse power supply serves as both the first voltage pulse power supply and the second voltage pulse power supply.

11. The plasma processing apparatus as described in claim 7, characterized in that: The first period has the same length as the second period.

12. The plasma processing apparatus as described in claim 7, characterized in that: The first period has a length different from that of the second period.

13. The plasma processing apparatus as described in claim 7, characterized in that: The first period is longer than the second period.

14. The plasma processing apparatus as described in claim 7, characterized in that: The first period is shorter than the second period.

15. The plasma processing apparatus as described in claim 7, characterized in that: The third level is different from the first level.

16. A plasma processing apparatus, characterized in that, include: chamber; A substrate support, disposed within the cavity, includes a bias electrode; An RF power supply configured to generate RF electrical power in order to generate plasma within the cavity; An edge ring configured to surround the substrate on the substrate support; A ring electrode configured to surround the edge ring; A first bias power supply electrically connected to the bias electrode; and The second bias power supply is electrically connected to the ring electrode. The first bias power supply and the second bias power supply are respectively configured to generate electrical bias energy with a bias frequency. One cycle of the electrical bias energy, having a time length that is the reciprocal of the bias frequency, includes a negative phase period during which the electrical bias energy has a voltage lower than its average voltage over that one cycle. The negative phase period of the electrical bias energy generated by the second bias power source overlaps at least partially with the negative phase period of the electrical bias energy generated by the first bias power source.

17. The plasma processing apparatus as claimed in claim 16, characterized in that: The phase of the electrical bias energy generated by the second bias power supply is synchronized with the phase of the electrical bias energy generated by the first bias power supply.

18. The plasma processing apparatus as described in claim 16 or 17, characterized in that: The electrical bias energy generated by the first bias power supply and the second bias power supply is either RF power having the bias frequency or a sequence of DC voltage pulses generated periodically at time intervals that are the reciprocal of the bias frequency.

19. The plasma processing apparatus as described in claim 16 or 17, characterized in that: The first bias power supply, the second bias power supply, or other bias power supply configured to generate electrical bias energy having the bias frequency are coupled to the edge ring.

Images