Laser Etching of Perovskite Detector Array with Metal Electrode Protective Layer and Fabrication Method
CN115483232BActive Publication Date: 2026-04-03XIDIAN UNIV
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-08-30
- Publication Date
- 2026-04-03
AI Technical Summary
Technical Problem
In existing technologies, semiconductor etching processes damage perovskite materials, affecting device performance, and there are limitations in etching thickness.
Method used
A protective layer is set on the metal electrodes and metal traces, and the metal electrodes and metal traces are protected by a laser etching process to prepare a laser-etched perovskite detector array with a metal electrode protective layer.
Benefits of technology
It effectively avoids damage to metal electrodes and metal traces during the etching process, prevents signal crosstalk, broadens the etching process window, and improves the accuracy and reliability of the photodetector array.
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Figure CN115483232B_ABST
Abstract
This invention discloses a laser-etched perovskite detector array with a metal electrode protective layer and its fabrication method, relating to the field of semiconductor device technology. The array includes: a substrate; metal electrodes located on one side of the substrate and arranged in an array; metal traces located on one side of the substrate, in the same layer as the metal electrodes, and electrically connected to the metal electrodes via the metal traces; a protective layer located on the side of the metal electrodes and metal traces facing away from the substrate; the protective layer protects the metal electrodes and metal traces during laser etching; and a light-absorbing layer located on the side of the protective layer facing away from the substrate. This application enables protection of the metal electrodes and metal traces during laser etching, broadens the process window of the laser etching array, and improves the detection accuracy of the photodetector array.
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