Optoelectronic devices, selector switches, deep ultraviolet detectors, thin film transistors and applications
CN115483271BActive Publication Date: 2025-12-12SONGSHAN LAKE MATERIALS LAB
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Patent Information
- Application Number
- CN202110600050.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2021-05-31
- Publication Date
- 2025-12-12
- Estimated Expiration
- 2041-05-31
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Figure CN115483271B_ABST
Abstract
The application relates to a photoelectric device, a selection switch, a deep ultraviolet detector, a thin film transistor and application, and belongs to the field of semiconductor devices. The thin film transistor comprises a gate insulating layer and an amorphous gallium oxide layer as a thick channel. Moreover, the thin film transistor further comprises an interface layer as a thin channel, which is located between the gate insulating layer and the amorphous gallium oxide layer. The resistivity of the amorphous gallium oxide layer is higher than that of the interface layer. The photoelectric device has good ultraviolet detection performance.
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Citation Information
Patent Citations
Deep-ultraviolet photoelectric detector of amorphous gallium oxide-based thin film transistor
CN109742180A
Thin film field effect transistor and display
US20080237598A1