High voltage converter arrangement

Abstract

The high-voltage converter device (1) includes a plurality of switching units (10a, ..., 10x) and at least one damping unit (50) configured to dampen electromagnetic noise caused by switching operations within the switching units (10a, ..., 10x). The switching units (10a, ..., 10x) are interconnected in series via current connectors (20). At least one damping unit (50) is arranged between the unit potential of a first switching unit (10a, 10j) and the unit potential of a second switching unit (10l, 10v) in the switching units, and at least one other switching unit in the switching units (10a, ..., 10x) is arranged between the first switching unit (10a, 10j) and the second switching unit (10l, 10v).

Description

Technical Field

[0001] This disclosure relates to a high-voltage converter device based on a voltage source converter including a series-connected switching unit. Background Technology

[0002] Today, HVDC (High Voltage Direct Current) converters are typically based on voltage source converters (VSCs) that include many series-connected switching units. Figure 1 A simplified diagram of a high-voltage converter device 1, including switching units 10a, ..., 10x, is shown. These switching units 10a, ..., 10x are connected in series with current connectors 20 (e.g., busbars) and stacked in a so-called valve structure. The switching units are arranged in a first layer 100 and a second layer 200, which are stacked within the valve structure. Figure 1 The similar device shown can be installed in an HVDC commutated converter (LCC) or a flexible AC transmission system (FACTS) converter.

[0003] refer to Figure 1 The parasitic inductance 30 is provided by the current connectors 20 between the switching units of each layer. Furthermore, parasitic capacitance 40 is formed between the switching units of different layers 100 and 200. These parasitic elements determine the high-frequency characteristics of the valve structure.

[0004] Switching units 10a, ..., 10x include power semiconductor switches that can be turned on by controllable action. The switching events of the power semiconductors within the switching units 10a, ..., 10x generate high-frequency currents, resulting in considerable broadband electromagnetic noise. This noise is partly radiated from the converter station. Furthermore, the electromagnetic noise can interfere with secondary electronic systems near the converter station, potentially causing electromagnetic compatibility (EMC) problems. For these reasons, HVDC converters must comply with certain EMC requirements, such as CigréTB 391.

[0005] Electromagnetic noise generated by switching events is typically filtered at the system level by introducing filter circuits in the AC or DC field of the converter substation, or by introducing high-frequency damping devices in the current path of the main converter.

[0006] Such electromagnetic interference (EMI) filtering components are typically large, bulky, expensive, and usually require additional space. The components used in such filters must be specially designed to meet given requirements; these components are not readily available. Consequently, the costs of materials and engineering can be high.

[0007] The damping devices in the main current path must be designed to provide high-frequency filtering while carrying low-frequency current. Therefore, the use of magnetic materials requires very careful design, and typically requires large magnetic cores to avoid saturation under full current load.

[0008] The design challenge of a suitable damping device for a high-voltage converter stems from the fact that the damping device is exposed to a voltage drop that may exceed 10 kV, and simultaneously, the damping device must be effective at frequencies above 1 MHz. Furthermore, the damping device should have a long service life of over 30 years with trouble-free operation. Another requirement is that the damping device should be able to operate in both indoor and outdoor environments. Summary of the Invention

[0009] Therefore, there is a need for a high-voltage converter device that significantly reduces high-frequency noise by using at least one damping device designed to save space and prevent costly EMI design adjustments.

[0010] Claim 1 specifies a high-voltage converter device that effectively reduces high-frequency noise.

[0011] According to an embodiment of the high-voltage converter device, the high-voltage converter device includes a plurality of switching units. The high-voltage converter device includes at least one damping unit configured to dampen electromagnetic noise caused by switching operations within the switching units. The switching units are interconnected in series via current connectors. At least one damping unit is arranged between the unit potential of a first switching unit and the unit potential of a second switching unit in the switching units. At least one other switching unit is arranged between the first and second switching units.

[0012] According to a possible embodiment, multiple switching units are arranged in a first layer and a second layer of the valve structure. The first and second layers of switching units are spatially separated from each other within the valve structure.

[0013] According to a possible embodiment, the first switching unit and the second switching unit are arranged in one of the first and second layers. This means that at least one damping unit is arranged between the unit potential of a corresponding switching unit in the same layer of the first and second layers and the unit potential of a corresponding other switching unit. Since at least one other switching unit is arranged between the first and second switching units, the first and second switching units are arranged in the same layer of the valve structure along the current connection without being adjacent to each other, i.e., without being side by side.

[0014] According to another embodiment, the first switching unit and the second switching unit are arranged in different layers of the first and second layers. This means that at least one damping unit is arranged between the unit potential of one switching unit in the first layer and the unit potential of another switching unit in the second layer.

[0015] According to another possible embodiment, at least one damping unit may be implemented between the potential of one switching unit of a first part / module of series-connected switching units in the same layer and the potential of another switching unit of a second part / module of series-connected switching units. This means that at least one damping unit is located between the corresponding potentials of the switching units, wherein one of these switching units is arranged in a corresponding first part / module of the first and second layers, and the other of these switching units is arranged in a corresponding second part / module of the first and second layers.

[0016] Therefore, at least one damping unit can be arranged between different potentials within the same layer or between the potential of a switching unit in one layer of the valve structure and another switching unit in an adjacent layer.

[0017] According to a possible embodiment of the high-voltage converter device, at least one damping unit is configured as an RC damper, which includes at least one capacitor and at least one resistor connected in series via a current / conductivity connector (e.g., a metal connector). All components of the damping unit should be of low inductance to ensure that the self-resonance of the damper is well above the frequency range of interest, such as the frequency range between 1 MHz and 30 MHz.

[0018] At least one capacitor may be configured as a single-layer ceramic high-voltage capacitor, and at least one resistor may be configured as a high-energy disc resistor that allows for very low parasitic inductance.

[0019] The arrangement and design within the proposed valve structure, including at least one damping unit, allows for effective suppression of electromagnetic radiation noise in the high-voltage converter device. Furthermore, the high-voltage converter device is configured as a low-inductance component (<500nH) effective up to several MHz. At least one damping unit can withstand a potential difference exceeding 30kV.

[0020] According to another possible embodiment of the high-voltage converter device, at least one damping unit includes a high-voltage fuse element that provides short-circuit fault mode protection for the high-voltage capacitor.

[0021] According to another possible embodiment, at least one damping unit can be enclosed in an insulating housing. The insulating housing can be configured as a hollow insulator. Furthermore, the insulating housing can comprise ceramic material, outdoor-grade epoxy resin, or indoor-grade epoxy resin coated with an outdoor-grade silicone rubber coating. The proposed insulating housing for encapsulating at least one damping unit allows the high-voltage converter device to be used in outdoor environments.

[0022] To meet the specific requirements of climate control, according to another possible embodiment, at least one damping unit may be coupled to the climate control system or the ventilation system. Attached Figure Description

[0023] The accompanying drawings provide further insight. In the drawings, elements with the same structure and / or function may be represented by the same reference numerals. It should be understood that the embodiments shown in the figures are illustrative and not necessarily drawn to scale.

[0024] Figure 1 A simplified diagram of a high-voltage converter device based on a voltage source converter with parasitic elements is shown;

[0025] Figure 2A A first embodiment of a high-voltage converter device is shown, which includes a damping unit arranged in parallel with a switching unit at a different layer from the valve structure of the converter device;

[0026] Figure 2B A second embodiment of a high-voltage converter device is shown, which includes a damping unit arranged in parallel with a switching unit at a different layer from the valve structure of the converter device;

[0027] Figure 2C A third embodiment of a high-voltage converter device is shown, which includes a damping unit arranged in parallel with a switching unit of a different layer from the valve structure of the converter device;

[0028] Figure 2D A fourth embodiment of a high-voltage converter device is shown, which includes a damping unit arranged in parallel with a switching unit on the same layer as the valve structure of the converter device;

[0029] Figure 3 The equivalent circuit of the valve structure of a high-voltage converter device including a damping unit is shown for two layers.

[0030] Figure 4 An embodiment of a high-voltage converter device with electromagnetic noise attenuation is shown, the high-voltage converter device including an equipotential frame located between different layers of the converter device;

[0031] Figure 5A A first embodiment of the damping unit components of a high-voltage converter device is shown;

[0032] Figure 5B A second embodiment of a damping unit component of a high-voltage converter device, including multiple capacitors and resistors, is shown;

[0033] Figure 5C A third embodiment of a damping unit assembly for a high-voltage converter device, comprising alternating capacitors and resistors, is shown;

[0034] Figure 5DA fourth embodiment of a damping unit assembly for a high-voltage converter device, including a field-shaping element for reducing local field enhancement, is shown;

[0035] Figure 5E The arrangement of the grouped capacitors / resistors in the damping unit of the high-voltage converter device is shown;

[0036] Figure 6 An embodiment of a high-voltage converter device is shown, which includes a monitoring system for indicating the status of a high-voltage fuse element;

[0037] Figure 7A A first embodiment of an insulating housing is shown, which is configured as a hollow insulator for encapsulating a damping unit of a high-voltage converter device;

[0038] Figure 7B A second embodiment is shown, comprising an insulating housing with an insulating medium, for encapsulating a damping unit of a high-voltage converter device; and

[0039] Figure 7C An embodiment of a damping unit for a high-voltage converter device is shown, which is encapsulated in an insulating housing and coupled to a climate control / ventilation system. Detailed Implementation

[0040] While this disclosure is adaptable to various modifications and alternatives, its details have been shown by way of example in the accompanying drawings and will be described in detail. However, it should be understood that this disclosure is not intended to be limited to the specific embodiments described. Rather, it is intended to cover all modifications, equivalents, and alternatives falling within the scope of this disclosure as defined by the appended claims.

[0041] Figures 2A to 2D Various embodiments of a high-voltage converter device 1 are shown, which includes a damping unit for providing electromagnetic noise attenuation. The high-voltage converter device 1 can be configured to convert DC voltage to AC voltage or vice versa. According to another embodiment, the high-voltage converter device 1 can be configured to convert DC voltage to DC voltage or AC voltage to AC voltage.

[0042] The high-voltage converter device 1 includes multiple switching units 10a, ..., 10x. The switching units 10a, ..., 10x are interconnected in series via current connectors 20 (e.g., busbars). The high-voltage converter device 1 includes at least one damping unit 50 configured to dampen electromagnetic noise caused by switching operations within the switching units 10a, ..., 10x. Figures 2A to 2D As further illustrated, at least one damping element 50 is arranged between the element potential of the first switching unit and the element potential of the second switching unit in the switching unit. Figures 2A to 2D As further illustrated, at least one other switching unit in the switching unit is arranged between the first switching unit and the second switching unit.

[0043] Switching units 10a, ..., 10x are arranged in at least a first layer 100 and at least a second layer 200 of the valve structure. The first layer 100 and the second layer 200 of the switching units 10a, ..., 10x are spatially separated from each other within the valve structure.

[0044] The first layer 100 and the second layer 200 of the switching unit are stacked on top of each other in the z-direction (vertical direction) of the valve structure and spaced apart from each other in the z-direction. In addition, the corresponding switching units 10a, ..., 10x of the first layer 100 and the second layer 200 are spaced apart from each other in the x-direction and y-direction within the first layer 100 and the second layer 200.

[0045] The first layer 100 includes first portions / modules 110 of some switching units and second portions / modules 120 of other switching units. The second layer 200 also includes first portions / modules 210 of some switching units and second portions / modules 220 of the remaining switching units. The switching units of the corresponding first portions 110, 210 of the first layer 100 and the second layer 200 are spaced apart from each other in the x-direction along the current connector 20, and the switching units of the second portions 120, 220 of the first layer 100 and the second layer 200 are spaced apart from each other in the x-direction along the current connector 20.

[0046] like Figures 2A to 2D As further illustrated, the first portion 110 and the second portion 120 of the switching unit in the first layer 100 are spaced apart from each other in the y-direction. The first portion 210 and the second portion 220 of the switching unit in the second layer 200 are also spaced apart from each other in the y-direction.

[0047] Figures 2A to 2D An embodiment of the high-voltage converter device 1 is shown, wherein the x-direction, y-direction, and z-direction are orthogonal to each other. Figure 2A The diagram illustrates a coordinate system representing the x, y, and z directions. It should be noted that other arrangements of the switching units, particularly arrangements where the x, y, and z directions are not orthogonal to each other, are also possible.

[0048] For example, refer to Figure 2AAt least one damping unit 50 is arranged between the unit potential of switching unit 10j and the unit potential of switching unit 10v. Furthermore, eleven other switching units are arranged between switching unit 10j and switching unit 10v. At least one damping unit 50 is arranged in parallel with switching units 10j and 10v, as well as the switching units arranged between switching units 10j and 10v.

[0049] according to Figures 2A to 2C In an embodiment of the high-voltage converter device shown, at least one damping unit 50 is arranged between the unit potential of one switching unit in the switching units of the first layer 100 and the unit potential of another switching unit in the adjacent second layer 200.

[0050] and Figure 2A Compared to the implementation method, Figure 2B The arrangement of multiple damping units 50 between different layers 100 and 200 of the valve structure is shown. The damping units 50 are correspondingly arranged between the unit potential of the switching unit of layer 100 and the unit potential of another switching unit of layer 200.

[0051] about Figure 2A and Figure 2B In the embodiment shown, at least one damping unit 50 is arranged between the corresponding unit potentials of the switching units 10a, ..., 10x, which are arranged opposite to each other in the z / vertical direction in layers 100 and 200 of the valve structure. This means that at least one damping unit 50 is vertically oriented in the valve structure, i.e., oriented along the z-direction.

[0052] Figure 2C The arrangement of damping units 50 in the valve structure of a high-voltage converter device is shown, wherein at least one damping unit 50 is arranged between corresponding unit potentials of switching units arranged in layers 100 and 200 without facing or opposing each other. In this case, the damping unit 50 shown connects any switching unit in two adjacent layers 100 and 200, thereby enabling... Figure 2A and Figure 2B Compared to the previous embodiment, the damping unit 50 is not vertically oriented in the valve structure.

[0053] Regarding the arrangement of the damping unit 50 between the corresponding potentials of the switching units located in adjacent layers 100 and 200, at least one damping unit should exist between each layer of the valve structure.

[0054] Figure 2DThe diagram illustrates another possible arrangement of the damping unit 50 within the valve structure of a high-voltage converter device. In this case, at least one damping unit 50 is arranged between the corresponding unit potential of one switching unit and the corresponding unit potential of another switching unit in the same layer 100 or 200. At least one damping unit is arranged between the corresponding unit potentials of switching units 10a, ..., 10x, which are arranged in the same layer along the current connector 20 without being adjacent to each other (i.e., not side-by-side).

[0055] It should be noted that, according to another embodiment, the switching units 10a, ..., 10x do not need to be arranged in different layers, such as... Figure 2D As shown, the switching units 10a, ..., 10x can be arranged in a single layer. In this case, at least one damping unit 50 is arranged between the unit potential of the first switching unit and the unit potential of the second switching unit in the single layer of switching units, and at least one other switching unit in the switching units is arranged between the first switching unit and the second switching unit.

[0056] Refer again Figure 2D In the embodiment shown, a damping unit 50 is arranged between the unit potential of one switching unit in the first part / module 110 of the switching units of layer 100 and the unit potential of another switching unit in the second part / module 120 of the switching units. Another damping unit 50 is arranged between the unit potential of the switching unit in the first part / module 210 of the switching units of the second layer 200 and the unit potential of another switching unit in the second part / module 220 of the switching units of the second layer 200.

[0057] The damping unit 50 is arranged in various ways within the same layers 100 and 200 of the valve structure or between different layers 100 and 200 (e.g. Figures 2A to 2D The combinations shown are basically all possible.

[0058] At least one damping unit 50 can be implemented as a separate component or can be integrated into a structural element (e.g., an insulating spacer 80 arranged between adjacent layers 100 and 200 of the valve structure). Figure 2A An embodiment of a high-voltage converter device is illustrated schematically, wherein at least one damping unit 50 is integrated into an insulating spacer 80.

[0059] Figure 3 The equivalent circuit of two adjacent layers 100 and 200 of the valve structure of a high-voltage converter device is shown. This high-voltage converter device includes at least one damping unit 50 arranged among a plurality of switching units 10a, ..., 10n. The switching units are modeled as voltage sources. Figure 3Parasitic elements, such as parasitic bus inductance 30 and parasitic stray capacitance 40, are also shown. Damping unit 50 is arranged in parallel with switching units 10a, ..., 10k.

[0060] The damping unit 50 is configured as an RC damper and includes at least one capacitor 51 and at least one resistor 52 arranged in series with each other.

[0061] Figure 4 An embodiment of a high-voltage converter device is shown, wherein the valve structure is provided with an equipotential frame 60, which is arranged in the equipotential plane between the first layer 100 and the second layer 200 of the switching units 10a, ..., 10x. The potential of the frame 60 is determined by a conductive connection 21 from the frame 60 to the potential of a certain switching unit of the first layer 100 and / or the second layer 200.

[0062] like Figure 4 As shown, at least one damping unit 50 can be arranged between the equipotential frame 60 and the unit potentials of corresponding switching units 10a, ..., 10x of one of the first layer 100 and the second layer 200. At least one damping unit 50 can be implemented between the potential of the frame 60 and the unit potential of the switching unit of the layer 100. Another damping unit 50 can be implemented between the potential of the frame 60 and the unit potential of the switching unit of the adjacent layer 200.

[0063] Figures 2A to 2D as well as Figure 4 The illustration shows a potential implementation where at least one damping unit 50 is located between switching units 10a, ..., 10x on the same layer or between switching units 10a, ..., 10x on adjacent layers 100 and 200. However, it should be noted that at least one damping unit 50 can be integrated into the valve structure in various ways.

[0064] Figure 5A An embodiment of a damping unit 50 configured as a basic RC damper including a high-voltage capacitor 51 and a resistor 52 is illustrated. These components are connected in series via conductive connectors 54. All components should be of low inductance to ensure that the self-resonance of the damping unit is well above the frequency range of interest, such as the range between 1 MHz and 30 MHz. This is ideal. Solutions with lower self-resonance frequencies may exist, but some effects from the damper still exist. Simulations show that the design of a damping unit including at least one capacitor and resistor connected in series results in a significant attenuation of electromagnetic noise above 1 MHz.

[0065] Capacitor 51 can be configured as a single-layer ceramic high-voltage capacitor, such as a disc capacitor. At least one resistor 52 can be configured as a high-energy disc resistor, such as a ceramic disc resistor. High-voltage single-layer disc capacitors and ceramic disc resistors exhibit very low parasitic inductance, for example, in the range of 1nH to 50nH. The conductive connection 54 between these components can be implemented as, for example, a low-inductance strip, rod, or cable. The capacitance of at least one capacitor 51 is typically between 0.5nF and 5nF. At least one resistor 52 can have a resistance between 10Ω and 1kΩ.

[0066] Figures 5B to 5E Several component variations of the damping unit 50 are shown. Figure 5B A variation of the component is shown, in which the damping unit 50 includes multiple capacitors 51 and multiple resistors 52 arranged in series along the conductive connector 54 to enhance redundancy and reliability. Furthermore, using multiple capacitors can reduce the maximum electric field strength within the damping unit.

[0067] Figure 5C A component variation of the damping unit 50 is shown, wherein, with Figure 5B In contrast to the non-alternating arrangement shown, the multiple capacitors 51 and multiple resistors 52 are arranged in an alternating manner.

[0068] Figure 5D Another component variation of the damping unit 50 is shown, which includes at least one field shaping element 55 to reduce local electric field enhancement at at least one capacitor 51 or resistor 52 of the damping unit 50. The field shaping element 55 can essentially be arranged on the top and / or bottom sides of the capacitor 51 and / or the top and bottom sides of the resistor 52 (e.g., Figure 5D (As shown) to reduce the enhancement of the local electric field.

[0069] Multiple capacitors 51 can be connected in series or in parallel. Figure 5E An embodiment is shown in which groups G1, G2, and G3 of multiple capacitors 51 / resistors 52 can be connected in series, and the groups G1, G2, and G3 of capacitors 51 / resistors 52 connected in series can be connected in parallel.

[0070] The damping unit 50 may or may not have fuse protection. However, the main risk associated with RC dampers lies in short-circuit fault modes, as this can lead to short circuits, for example, between switching units. For this reason, a high-voltage fuse can be implemented as protection. Figures 5A to 5EA variant of the damping unit 50 is shown, comprising an optional fuse element 53 connected in series with at least one capacitor 51 and at least one resistor 52 via a conductive connector 54. The fuse element 53 can be configured as a high-voltage fuse element. The converter device may include components that allow for replacement of the fuse and the RC damper.

[0071] refer to Figure 6 According to a possible embodiment of the high-voltage converter device, a monitoring system 56 can be configured to indicate the status of the fuse element 53. The monitoring system for the fuse element 53 can be implemented as a striker 57 with an optical indicator. When the fuse element melts, the striker 57 ejects from the fuse end. The striker's movement can trigger an auxiliary contact for remote indication. Another possible implementation of the monitoring system 56 for monitoring the status of the fuse element 53 is a near-field communication (NFC) readout system.

[0072] At least one damping unit 50 may be enclosed by a suitable housing, such as an insulating housing. Figures 7A to 7C A potential embodiment of a housing 70 for enclosing a damping unit 50 configured as an RC damper is shown.

[0073] refer to Figure 7A The insulating housing 70 is configured as a hollow insulator. The insulating housing may contain ceramic or composite materials. To reduce local electric field enhancement, the field grading element 71 may be integrated into the insulating housing, or the field grading material may be used in the insulating housing.

[0074] According to possible embodiments, at least one damping unit may be embedded in a filler material. To reduce the risk of leakage and arcing, for example, due to moisture buildup, the insulating housing may be filled with a suitable dielectric. Figure 7B An insulating housing 70 filled with an insulating medium 72 is shown. The insulating medium 72 can be a gel, oil, gas, or solid material (e.g., epoxy resin). To further reduce the risk of moisture buildup, a dehumidifier, such as a desiccant, can be added to the inside of the insulating housing, especially after the fluid is filled. The desiccant can be derived from molecular sieves, zeolites, alumina, silica gel, or other suitable materials.

[0075] For outdoor use, the damping unit 50 can be installed in a suitable outdoor-compatible insulating housing to protect it from weather conditions. Failure of this protection (e.g., increased moisture within the housing) can jeopardize the integrity of the insulation system. To provide suitable outdoor-compatible qualities to the housing 70, the material of the insulating housing 70 may comprise outdoor-grade epoxy resin, or indoor-grade epoxy resin coated with an outdoor-grade silicone rubber coating, or outdoor-grade silicone rubber only, or ceramic with or without an additional outdoor-grade silicone rubber coating. According to another possible embodiment, the housing material may have hydrophobic transfer properties.

[0076] To avoid problems caused by condensation, excessively low or high temperatures, at least one damping unit 50, enclosed by the insulating housing 70, can be coupled to a ventilation system or climate control system 90, such as... Figure 7C As shown.

[0077] Figure 7C An embodiment is shown in which a ventilation system 90 is coupled to the hollow portion of the housing 70, thereby enabling air circulation within the housing 70 via airflow generated by the climate control / ventilation system 90. The airflow enters the interior of the insulating housing 70 at an inlet port and exits from the interior of the insulating housing at an outlet port.

[0078] The main benefits of the arrangement and design of at least one damping unit 50 in the valve structure of the proposed high-voltage converter device can be summarized as follows:

[0079] The proposed damping unit design and arrangement can significantly reduce high-frequency noise in the converter station.

[0080] At least one damping unit is a key enabler of outdoor converter stations because it compensates for the shielded valve hall.

[0081] The design of at least one damping unit provides a certain degree of redundancy. If a single damping unit fails, the electromagnetic noise will not increase significantly.

[0082] The proposed solution could potentially prevent costly electromagnetic interference design adjustments.

[0083] Because at least one damping unit is integrated into the valve structure, electromagnetic noise is eliminated very close to the noise source.

[0084] The proposed damping unit is not mounted in series with the main current path of the converter. The components of the damping unit (i.e., at least one resistor, at least one capacitor, and optional fuse) can therefore be selected for lower rated currents, which makes it smaller and less expensive.

[0085] Compared to other solutions (such as high-frequency reactors installed in AC or DC fields), at least one damping unit requires no additional installation space. Since at least one damping unit may be cheaper than other solutions (such as high-frequency reactors), cost savings can be expected.

[0086] The proposed damping unit 50 provides additional techniques for controlling electromagnetic noise at the converter station and thus expands the combination of EMC countermeasures.

[0087] The proposed method is a differentiating circuit for EMC performance.

[0088] The use of at least one damping unit in a high-voltage converter unit can facilitate the operation of high-voltage DC converter stations in environments highly sensitive to EM (Effective Microwave Oxidation). Therefore, it may expand the market for high-voltage DC stations.

[0089] The design and arrangement of at least one damping unit 50 proposed can be an enabler for new semiconductor technologies (such as silicon carbide (SiC)) that generate significantly more noise at high frequencies.

[0090] As mentioned in Figures 1 to 7C The embodiments shown represent exemplary embodiments of a high-voltage converter device. Therefore, these exemplary embodiments do not constitute a complete list of all embodiments of a high-voltage converter device. Actual converter devices may differ from the embodiments shown in the figures.

[0091] List of reference numerals

[0092] 1. High-voltage converter device

[0093] 10a, ..., 10x Switching units

[0094] 20 Current connectors

[0095] 30 Parasitic Inductance

[0096] 40 Parasitic capacitance

[0097] 100th and 200th floors

[0098] The first part of switch units 110 and 210

[0099] The second part of the 120 and 220 switch units

[0100] 50 damping units

[0101] 51 Capacitor

[0102] 52 Resistor

[0103] 53. Fuse element

[0104] 54 Conductive connectors

[0105] 55 Field forming elements

[0106] 56 Monitoring systems for fuse elements

[0107] 57 firing pin

[0108] 60 Equipotential Frame

[0109] 70 Insulating Housing

[0110] 71 Field-Grading Components

[0111] 72 Insulating medium

[0112] 80 Insulating spacers

[0113] 90. Climate control / ventilation system.

Claims

1. A high-voltage converter device, comprising: - Multiple switching units (10a, ..., 10x). - At least one damping unit (50), said at least one damping unit being configured to dampen electromagnetic noise caused by switching operations in the switching units (10a, ..., 10x), - Wherein, the switching units (10a, ..., 10x) are interconnected in series via current connectors (20), - Wherein, the at least one damping unit (50) is arranged between the unit potential of the first switching unit (10a, 10j) in the switching unit and the unit potential of the second switching unit (10l, 10v) in the switching unit, and - Wherein, at least one of the switching units (10a, ..., 10x) is arranged between the first switching unit (10a, 10j) and the second switching unit (10l, 10v); - Wherein, the at least one damping unit (50) includes at least one capacitor (51) and at least one resistor (52), the at least one capacitor (51) being configured as a single-layer ceramic high-voltage capacitor, and the at least one resistor (52) being configured as a high-energy disk resistor. - Wherein, the conductor connection between the at least one capacitor (51) and the at least one resistor (52) is implemented as a low-inductance strip, rod, or cable, and - Wherein, the capacitance of the at least one capacitor (51) is between 0.5 nF and 5 nF, and the resistance of the at least one resistor (52) is between 10 Ω and 1 kΩ.

2. The high-voltage converter device as described in claim 1, - wherein, The switching units (10a, ..., 10x) are arranged in a first layer and a second layer (100, 200). - Wherein, the switching units (10a, ..., 10x) of the first and second layers (100, 200) are spatially separated from each other in the valve structure. - Wherein, the first switching unit (10a) and the second switching unit (10l) are arranged in one of the first layer and the second layer (100, 200).

3. The high-voltage converter device as described in claim 1, - wherein, The switching units (10a, ..., 10x) are arranged in a first layer and a second layer (100, 200). - Wherein, the switching units (10a, ..., 10x) of the first and second layers (100, 200) are spatially separated from each other in the valve structure. - Wherein, the first switching unit (10j) and the second switching unit (10v) are arranged in different layers of the first layer and the second layer (100, 200).

4. The high-voltage converter device as described in claim 1, - wherein, The at least one damping unit (50) includes a plurality of the at least one capacitor (51) and a plurality of the at least one resistor (52). - wherein the plurality of at least one capacitor (51) and the plurality of at least one resistor (52) are arranged in an alternating manner.

5. The high-voltage converter device as described in any one of claims 1 to 4, wherein, The at least one damping unit (50) includes at least one field shaping element (55) for reducing the local electric field enhancement at at least one capacitor (51) or resistor (52) of the damping unit (50).

6. The high-voltage converter device as described in any one of claims 1 to 4, wherein The at least one damping unit (50) includes a high-voltage fuse element (53).

7. The high-voltage converter device as described in any one of claims 1 to 4, wherein, The at least one damping unit (50) is enclosed in an insulating housing (70).

8. The high-voltage converter device as described in any one of claims 1 to 4, wherein The at least one damping unit is embedded in the filler material.

9. The high-voltage converter device as described in claim 2 or 3, - wherein, The switching units (10a, ..., 10x) of the first and second layers (100, 200) are stacked on top of each other in the z-direction of the valve structure and are separated from each other in the z-direction. - Wherein, the corresponding switching units (10a, ..., 10x) of the first layer and the second layer (100, 200) are separated from each other in the x and y directions within the first layer and the second layer (100, 200), wherein the x, y and z directions are orthogonal to each other.

10. The high-voltage converter device as described in claim 9, - wherein, The first and second layers (100, 200) include corresponding first portions (110, 210) of switching units (10a, ..., 10x) and corresponding second portions (120, 220) of switching units (10a, ..., 10x). - Wherein, the switching units (10a, ..., 10x) of the corresponding first portions (110, 210) of the first and second layers (100, 200) are separated from each other along the current connector (20) in the x-direction, and the switching units (10a, ..., 10x) of the corresponding second portions (120, 220) of the first and second layers (100, 200) are separated from each other along the current connector (20) in the x-direction. - Wherein, the switching units (10a, ..., 10x) of the first and second portions (110, 120) of the first layer (100) are separated from each other in the y-direction, and the switching units (10a, ..., 10x) of the first and second portions (210, 220) of the second layer (200) are separated from each other in the y-direction. - Wherein, the first switch unit (10a) is arranged in the corresponding first part (110, 210) of the first layer and the second layer (100, 200), and the second switch unit (10l) is arranged in the corresponding second part (120, 220) of the first layer and the second layer (100, 200).

11. The high-voltage converter device as claimed in claim 2 or 3, comprising: - An equipotential frame (60) is arranged in the equipotential plane between the switching units (10a, ..., 10x) of the first and second layers (100, 200). - wherein the at least one damping unit (50) is arranged between the unit potential of the corresponding switching unit (10a, ..., 10x) in the equipotential frame (60) and one of the first and second layers (100, 200).

12. The high-voltage converter device as claimed in claim 2 or 3, comprising: - An insulating spacer (80) is arranged between the switching units (10a, ..., 10x) of the first layer and the second layer (100, 200). - wherein the at least one damping unit (50) is arranged in the insulating spacer (80).

13. The high-voltage converter device as described in any one of claims 1 to 4, wherein The at least one damping unit (50) is coupled to a climate control system or a ventilation system (90).

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