半导体装置以及模块
By optimizing the circuit layer design of the semiconductor device and adjusting the shape and position of the electrode layer, the problem of conductor loss between the upper electrode and the substrate was solved, achieving a low-loss power line shielding effect.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- MURATA MFG CO LTD
- Filing Date
- 2021-04-28
- Publication Date
- 2026-07-17
AI Technical Summary
In existing semiconductor capacitors, there is a large area between the upper electrode and the support substrate, which leads to the problem of electric field intrusion into the support substrate and causing conductor loss.
The circuit layer of the semiconductor device is designed such that the center of gravity of the first electrode layer is positioned on the side of the second electrode layer close to the substrate end face. By adjusting the shape and positional relationship of the electrode layers, the proportion of the first electrode layer in the non-forming area of the electrode layer is ensured to be more than 80%. The size ratio of the opposing and non-opposing parts of the electrode layer is optimized to shield the electric field lines.
It effectively suppresses conductor loss, improves the power line shielding effect of semiconductor devices, and reduces power line loss between the electrode layer and the substrate.
Smart Images
Figure CN115485839B_ABST