半导体装置及功率放大器
By inserting structural adjustments to the material composition and thickness into high electron mobility transistors, the problems of contact resistance and breakdown voltage caused by the pointed region were solved, achieving a balance between high breakdown voltage and low contact resistance, thus improving device performance.
CN115498032BActive Publication Date: 2026-07-17WIN SEMICON
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- WIN SEMICON
- Filing Date
- 2022-06-17
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
In high electron mobility transistors, the formation of spike regions leads to a decrease in contact resistance and a drop in breakdown voltage, affecting device performance.
Method used
An insert structure, including first and second insert layers, is inserted between the channel layer and the barrier layer to adjust the material composition and thickness, form an ohmic contact, and reduce the impact of the spike region.
Benefits of technology
This achieves a balance between high breakdown voltage and low contact resistance, improving the operational performance and reliability of semiconductor devices.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN115498032B_ABST
Abstract
本发明公开了一种半导体装置及功率放大器，所述半导体装置包括：衬底；沟道层，设置于衬底上，其中沟道层是以氮化镓形成；阻挡层，设置于沟道层上，其中阻挡层是以氮化铝镓AlzGa1‑zN形成；以及插入结构，插入于沟道层与阻挡层之间。插入结构包括：第一插入层，设置于沟道层上，其中第一插入层是以氮化铝镓AlxGa1‑xN形成；以及第二插入层，设置于第一插入层上，其中第二插入层是以氮化铝镓AlyGa1‑yN形成，且y大于x。半导体装置还包括：栅极电极，设置于阻挡层上；源极电极和漏极电极，设置于阻挡层上，且分别于栅极电极的相对两侧；以及尖状区，形成于源极电极和漏极电极的至少一个之下。
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