SiC衬底处理方法及结构、晶圆加工方法
By setting a compensation film on the SiC substrate and performing cleaning and reduction, the problems of low yield and unstable processing caused by SiC substrate defects are solved, thereby improving the utilization rate of SiC substrate and the yield of wafer products.
CN115513041BActive Publication Date: 2026-07-17GTA SEMICON CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- GTA SEMICON CO LTD
- Filing Date
- 2022-09-23
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Defects in SiC substrates, such as micropipes, scratches, and polysilicon residue, can lead to low yields, affect subsequent processes, and even cause wafer scrap.
Method used
A compensation film is set on a SiC substrate to protect the defective SiC substrate during wafer front-side processing. The target wafer product is obtained by cleaning and cutting the compensation film.
Benefits of technology
It improves the utilization rate of defective SiC substrates and the yield of wafer products, prevents the deepening of bulges or depressions in small areas, and enables the processing of some or all wafer products.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN115513041B_ABST
Abstract
本申请提供一种SiC衬底处理方法及结构、晶圆加工方法，其中，SiC衬底处理方法包括：在缺陷SiC衬底上设置补偿膜得到第一SiC衬底；补偿膜用于保护缺陷SiC衬底进行晶圆正面各加工工艺，得到缺陷SIC衬底对应的晶圆产品；在第一SiC衬底上进行晶圆产品加工工艺，得到缺陷衬底对应的初始晶圆产品；在初始晶圆产品上清洗补偿膜得到第二晶圆产品，并对第二晶圆产品的缺陷处SiC衬底进行削减得到缺陷SIC衬底对应的目标晶圆产品。通过在缺陷SiC衬底上设置补偿膜，实现该缺陷SiC衬底进行晶圆正面各加工工艺，在晶圆加工工艺中得到部分晶圆中间产品或者全部晶圆产品。不仅提升缺陷SiC衬底的利用率，而且提升晶圆产品的良率。
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