一种基于磁隧道结产生及擦除单个斯格明子的方法
By applying a specific pulsed current to the magnetic tunnel junction to induce magnetic domain walls, individual skyrmions can be generated or erased, solving the problem of the difficulty in controlling skyrmions in existing technologies. This enables fully electrical writing and reading of information, and is compatible with existing processes.
CN115527576BActive Publication Date: 2026-07-17THE CHINESE UNIV OF HONG KONG (SHENZHEN)
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- THE CHINESE UNIV OF HONG KONG (SHENZHEN)
- Filing Date
- 2022-08-30
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Existing technologies are difficult to effectively utilize current-induced generation and erasure of individual skyrmions, and are also difficult to be compatible with existing semiconductor processes.
Method used
By applying a specific pulsed current to the magnetic tunnel junction, magnetic domain walls are induced and single, stable skyrmions are generated or erased within the magnetic layer. Logical computation is then achieved by combining this with the detection of the magnetic tunnel junction.
Benefits of technology
It enables the controlled generation and erasure of individual skyrmions, supports all-electric writing and reading of information, and is compatible with existing magnetic tunnel junction technology.
✦ Generated by Eureka AI based on patent content.
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Figure CN115527576B_ABST
Abstract
本发明涉及一种基于磁隧道结产生及擦除单个斯格明子的方法，包括：将磁性薄膜接入电路，所述磁性薄膜包括依次叠加的第一衬底层、磁隧道结层、磁性层以及第二衬底层；施加第一磁场，所述磁性层内诱导出磁畴壁；撤离所述第一磁场，并施加第一方波脉冲电流，所述磁性层内产生单个且稳定的磁性斯格明子；施加第二方波脉冲电流，将所述磁性层内产生的单个且稳定的磁性斯格明子擦除，可本发明可与现有的磁隧道结工艺兼容，实现电探测磁斯格明子，并完成信息的写入和读取。
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