Plasma processing method and plasma processing apparatus

Abstract

The present disclosure relates to a plasma processing method and a plasma processing apparatus. The plasma processing method is performed by a plasma processing apparatus including a base, a substrate support portion having a substrate support surface that supports a substrate, a heater that adjusts a temperature of the substrate support surface, a temperature sensor that measures the temperature of the substrate support surface, a power adjustment portion that adjusts power supplied to the heater, and a control portion. The plasma processing method includes setting a set temperature of the substrate support surface to a first temperature, measuring a first power supplied by the power adjustment portion to the heater before plasma generation, measuring a second power supplied by the power adjustment portion to the heater after plasma generation, calculating a heat input amount from the plasma based on the first power and the second power, and correcting the first temperature to a second temperature based on the calculated heat input amount and a thermal resistance between the substrate support portion and the temperature sensor.

Description

Technical Field

[0001] This disclosure relates to a plasma processing method and a plasma processing apparatus. Background Technology

[0002] Patent Document 1 discloses a mounting platform having a support member and a base. The support member has a mounting area with a heater and an outer peripheral area surrounding the mounting area. Patent Document 1 also discloses that multiple heaters are arranged in the mounting area, and each heater is supplied with independently adjusted power to independently adjust the temperature of multiple portions of the mounting area.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2016-001688 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This disclosure provides an improvement technique for enhancing the temperature control of a substrate held in a substrate support.

[0008] Solution for solving the problem

[0009] According to one aspect of this disclosure, a plasma processing method is provided, the method being performed by a plasma processing apparatus, the plasma processing apparatus comprising: a base; a substrate support disposed on the base, the substrate support having a substrate support surface for supporting a substrate; a heater disposed inside the substrate support, the heater being capable of adjusting the temperature of the substrate support surface; a temperature sensor for measuring the temperature of the substrate support surface; and a power adjustment unit for adjusting the power supplied to the heater, the plasma processing method comprising the steps of: setting a set temperature of the substrate support surface to a first temperature; and adjusting the power supplied to the heater from the power adjustment unit. The heater is supplied with power; before the plasma is generated, when the temperature of the substrate support surface measured by the temperature sensor stabilizes at the first temperature, the first power supplied by the power adjustment unit to the heater is measured; after the plasma is generated, when the temperature of the substrate support surface measured by the temperature sensor stabilizes at the first temperature, the second power supplied by the power adjustment unit to the heater is measured; the heat input from the plasma is calculated based on the first power and the second power; and the first temperature is corrected to the second temperature based on the calculated heat input and the thermal resistance between the substrate support and the temperature sensor.

[0010] The effects of the invention

[0011] This disclosure provides an improvement technique for enhancing the temperature control of a substrate held in a substrate support. Attached Figure Description

[0012] Figure 1 This is a diagram illustrating a structural example of the plasma processing apparatus according to this embodiment.

[0013] Figure 2 This diagram illustrates the processing of the plasma processing apparatus according to this embodiment.

[0014] Figure 3 This diagram illustrates the flow of heat in a state where no plasma is generated, with respect to the plasma processing apparatus according to this embodiment.

[0015] Figure 4 This is a diagram illustrating the flow of heat in the state of plasma generation in relation to the plasma processing apparatus according to this embodiment.

[0016] Figure 5 This is a flowchart illustrating the plasma processing method of the plasma processing apparatus according to this embodiment. Detailed Implementation

[0017] The following description, with reference to the accompanying drawings, illustrates the methods used to implement this disclosure. Furthermore, in this specification and the drawings, substantially identical structures are labeled with the same reference numerals, thereby omitting redundant descriptions. Additionally, for ease of understanding, the scales of various parts in the drawings may sometimes differ from the actual scales.

[0018] For directions such as parallel, right angle, orthogonal, horizontal, vertical, up and down, left and right, deviations to a certain extent are allowed without impairing the effect of the implementation. The shape of the corner is not limited to a right angle, but may also be arc-shaped. Parallel, right angle, orthogonal, horizontal, and vertical may also include approximately parallel, approximately right angle, approximately orthogonal, approximately horizontal, and approximately vertical.

[0019] The following uses Figure 1 The structure of the plasma processing device will be explained using an example.

[0020] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. Additionally, the plasma processing apparatus 1 includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a spray head 13. The substrate support 11 is disposed within the plasma processing chamber 10. The spray head 13 is disposed above the substrate support 11. In one embodiment, the spray head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the spray head 13, the sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s, and at least one gas outlet for discharging gas from the plasma processing space. The sidewall 10a is grounded. The spray head 13 and the substrate support 11 are electrically insulated from the shell of the plasma processing chamber 10.

[0021] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region (substrate support surface) 111a for supporting a substrate (wafer) W and an annular region (ring support surface) 111b for supporting the ring assembly 112. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 when viewed from above. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 in such a way that it surrounds the substrate W on the central region 111a of the main body 111. In one embodiment, the main body 111 includes a base 115 and a substrate support 116. The substrate support 116 is, for example, an electrostatic chuck including a dielectric body and electrodes disposed within the body. Alternatively, the substrate support 116 may also serve as a ring support for holding the ring assembly 112. The substrate support portion 116 is fixed to the base 115 by means of an adhesive layer 117. The base 115 includes a conductive member. The conductive member of the base 115 functions as a lower electrode. The substrate support portion 116 is disposed on the base 115. The upper surface of the substrate support portion 116 has a substrate support surface 111a. The substrate support portion 116 includes a heater 118 (see reference) inside, which is capable of adjusting the temperature of the substrate support surface 111a. Figure 2The ring assembly 112 includes one or more annular members. At least one of the annular members is an edge ring. Additionally, although not shown in the figures, the substrate support 11 may also include a temperature control module configured to adjust at least one of the substrate support 116, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path. Furthermore, the substrate support 11 may also include a heat transfer gas supply section configured to supply heat transfer gas between the back surface of the substrate W and the substrate support surface 111a. The substrate support 11 has a temperature sensor 150 for measuring the temperature of the substrate support surface 111a at a position on the substrate support 116 closer to the base 115 than the heater 118. In addition, the substrate support portion 116 can be configured such that the substrate support surface 111a and the ring support surface 111b are integrated, but the substrate support portion 116 can also be configured such that the substrate support portion having the substrate support surface 111a and the ring support portion having the ring support surface 111b are separated.

[0022] The spray head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The spray head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlets 13c. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s through the gas diffusion chamber 13b and the plurality of gas inlets 13c. Additionally, the spray head 13 includes a conductive member. The conductive member of the spray head 13 functions as an upper electrode. Furthermore, in addition to the spray head 13, the gas inlet may also include one or more side gas injectors (SGIs) mounted on one or more openings formed in the sidewall 10a.

[0023] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one type of process gas from its respective gas source 21 to the spray head 13 via its respective flow controller 22. Each flow controller 22 may, for example, include a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may also include one or more flow modulation devices for modulating or pulsedizing the flow rate of the at least one type of process gas.

[0024] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to the conductive members of the substrate support 11 and / or the conductive members of the spray head 13. Plasma is thus formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least part of a plasma generation unit configured to generate plasma from one or more processing gases in the plasma processing chamber 10. Furthermore, supplying a bias RF signal to the conductive members of the substrate support 11 generates a bias potential on the substrate W, thereby attracting ionic components from the formed plasma to the substrate W.

[0025] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to a conductive member of the substrate support 11 and / or a conductive member of the spray head 13 via at least one impedance matching circuit, configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 13MHz to 150MHz. In one embodiment, the first RF generation unit 31a may also be configured to generate multiple source RF signals with different frequencies. The generated one or more source RF signals are supplied to the conductive member of the substrate support 11 and / or the conductive member of the spray head 13. The second RF generation unit 31b is coupled to a conductive member of the substrate support 11 via at least one impedance matching circuit, configured to generate a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 400kHz to 13.56MHz. In one embodiment, the second RF generation unit 31b may also be configured to generate multiple bias RF signals with different frequencies. The generated one or more bias RF signals are supplied to the conductive members of the substrate support 11. Additionally, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0026] Alternatively, the power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is connected to a conductive member of the substrate support 11 to generate a first DC signal. The generated first bias DC signal is applied to the conductive member of the substrate support 11. In one embodiment, the first DC signal may also be applied to other electrodes, such as electrodes within the substrate support 116. In one embodiment, the second DC generating unit 32b is connected to a conductive member of the spray head 13 to generate a second DC signal. The generated second DC signal is applied to the conductive member of the spray head 13. In various embodiments, at least one of the first DC signal and the second DC signal may be pulsed. Furthermore, in addition to the RF power supply 31, the first DC generating unit 32a and the second DC generating unit 32b may be provided, or the first DC generating unit 32a may replace the second RF generating unit 31b.

[0027] The exhaust system 40 can be connected to a gas outlet 10e, for example, located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0028] The plasma processing apparatus 1 includes a control unit 2. The control unit 2 processes computer-executable commands for causing the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 can be configured to control various elements of the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 may, for example, include a computer 2a. The computer 2a may, for example, include a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 can be configured to perform various control actions based on programs stored in the storage unit 2a2. The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or combinations thereof. The communication interface 2a3 can communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0029] <Plasma processing method involved in this embodiment>

[0030] The plasma processing method involved in this embodiment will be described. Figure 2 This diagram illustrates the processing described in the plasma processing apparatus 1 according to this embodiment. Specifically, Figure 2 A partial cross-section of the substrate support 11 of the plasma processing apparatus 1 is shown.

[0031] The substrate support 11 includes a base 115 and a substrate support portion 116. The substrate support portion 116 is mounted on the base 115 by means of an adhesive layer 117.

[0032] The base 115 includes a base body 115a made of metal and a flow path 115c disposed inside the base body 115a. A refrigerant such as brine, which is adjusted to a set temperature, flows through the flow path 115c.

[0033] The base 115 is adjusted to a set temperature by heat exchange with the refrigerant flowing in the flow path 115c. Furthermore, the substrate support 116 mounted on the base 115 is cooled by the base 115.

[0034] The substrate support portion 116 has a heater 118 inside. The heater 118 is used to heat the substrate placed on the substrate support surface 111a.

[0035] The substrate support 11 includes a temperature sensor 150. The temperature sensor 150 can be positioned closer to the base 115 than the heater 118. The temperature sensor 150 measures the temperature of the substrate support surface 111a.

[0036] The heater 118 and temperature sensor 150 are connected to the power adjustment unit 200. The power adjustment unit 200 adjusts the power supplied to the heater 118 so that the temperature detected by the temperature sensor 150 becomes the set temperature Tset set by the control unit 2. The power adjustment unit 200 controls the power supplied to the heater 118, for example, through PID (Proportional-Integral-Differential) control so that the temperature detected by the temperature sensor 150 becomes the set temperature Tset.

[0037] Here, the flow of heat is explained in the case where no plasma is generated in the plasma processing device 1 and in the case where plasma is generated.

[0038] Figure 3 This diagram illustrates the flow of heat in a state where no plasma is generated, with respect to the plasma processing apparatus 1 according to this embodiment. Figure 4 This diagram illustrates the flow of heat in the plasma-generating state of the plasma processing apparatus 1 according to this embodiment.

[0039] Figure 3 and Figure 4 This diagram is obtained by modeling the thermal flow from the surface Se (substrate support surface 111a) of the substrate support portion 116 to the surface Sc of the flow path 115c.

[0040] It is assumed that there exist thermal resistances Rsh between surface Se and heater 118, Rht between heater 118 and temperature sensor 150, and Rtc between temperature sensor 150 and flow path 115c, from surface Se of substrate support portion 116 to surface Sc of flow path 115c. Furthermore, the temperature of surface Se is defined as temperature Ts, the temperature of heater 118 as temperature Th, the temperature of temperature sensor 150 as temperature Tt, and the temperature of flow path 115c, i.e., the temperature of the refrigerant flowing in flow path 115c, is defined as temperature Tc.

[0041] In addition, the thermal resistances Rsh, Rht, and Rtc are known based on design or measured values.

[0042] It is assumed that the heat capacity of the refrigerant in flow path 115c is large enough, so even if heat is absorbed from heater 118, the temperature Tc can be considered to be constant.

[0043] exist Figure 3 In the state where no plasma is generated, when thermal equilibrium is reached, the temperature Ts of surface Se is equal to the temperature Th of heater 118. At this time, the power adjustment unit 200 adjusts the power supplied to heater 118 so that the temperature Tt of temperature sensor 150 becomes the set temperature.

[0044] The heat Qhtr1 supplied from heater 118 flows out from surface Sc to the refrigerant through thermal resistances Rht and Rtc.

[0045] On the other hand, Figure 4 In the state of plasma generation, heat Qrf flows in from surface Se. Heat Qrf flows out from surface Sc in sequence through thermal resistances Rsh, Rht, and Rtc. In addition, the power adjustment unit 200 adjusts the power supplied to heater 118 so that the temperature Tt of temperature sensor 150 reaches the set temperature.

[0046] When the set temperature of temperature sensor 150 is set to the same temperature Tt in both the state without plasma generation and the state with plasma generation, the heat Qhtr2 is smaller than the heat Qhtr1 by an amount corresponding to the amount of heat Qrf flowing in from the plasma. That is, the heat Qhtr2 is expressed as in Equation 1.

[0047]

Number 1

[0048] Qhtr2=Qhtr1-Qrf…(Equation 1)

[0049] In the state of plasma generation, a temperature difference ΔT (Kelvin) as shown in Equation 2 is generated between the temperature Ts of the surface Se and the temperature Tt of the temperature sensor 150.

[0050]

Number 2

[0051] ΔT=Rht(Qhtr2+Qrf)+Rsh Qrf…(Formula 2)

[0052] Furthermore, in Equation 2, for example, the heat Qrf is set as Qrf (watts), the heat Qhrt2 is set as Qhrt2 (watts), the thermal resistance Rht is set as Rht (Kelvin / watts), and the thermal resistance Rsh is set as Rsh (Kelvin / watts).

[0053] Furthermore, in the absence of plasma generation, a temperature difference ΔT0 (Kelvin) as shown in Equation 3 is generated between the temperature Ts of the surface Se and the temperature Tt of the temperature sensor 150. However, since the thermal resistance Rht and the heat Qhtr1 are known, the temperature difference ΔT0 can be corrected.

[0054]

Number 3

[0055] ΔT0=Rht Qhtr1…(Equation 3)

[0056] Furthermore, in Equation 3, for example, the heat Qhrt1 is set as Qhrt1 (watts), and the thermal resistance Rht is set as Rht (Kelvin / watts).

[0057] In the plasma processing method of this embodiment, while plasma is being generated, the power supplied to the heater 118 is adjusted so that the temperature of the surface Se becomes the desired temperature.

[0058] Figure 5 This is a flowchart illustrating the plasma processing method of the plasma processing apparatus 1 according to this embodiment. Furthermore, it is assumed that the plasma is not generated during the initial processing stage.

[0059] First, the control unit 2 sets the set temperature Tset of the power adjustment unit 200, i.e., the set temperature Tset of the substrate support surface 111a, to a first temperature T1 (step S10). Next, the control unit 2 controls the power adjustment unit 200 to supply power to the heater 118 (step S20). The control unit 2 remains in standby mode after supplying power from the power adjustment unit 200 to the heater 118 until the temperature measured by the temperature sensor 150 stabilizes at the first temperature T1, which is the set temperature Tset.

[0060] Furthermore, the determination that the temperature measured by the temperature sensor 150 is the first temperature T1 is not limited to the case where the temperature measured by the temperature sensor 150 is exactly the same as the first temperature T1, but also includes the case where the temperature measured by the temperature sensor 150 is within the control range including the first temperature T1.

[0061] When the temperature measured by the temperature sensor 150 stabilizes at the first temperature T1, the control unit 2 controls the power adjustment unit 200 and measures the first power P1 supplied by the power adjustment unit 200 to the heater 118 (step S30). Furthermore, steps S10, S20, and S30 are performed in the state before plasma is generated, that is, before plasma is generated.

[0062] Next, the control unit 2 supplies processing gas from the gas supply unit 20 and RF power from the power supply 30, i.e., controls the plasma generation unit to generate plasma (step S40). Furthermore, the control unit 2 remains in standby mode after initiating plasma generation until the temperature measured by the temperature sensor 150 stabilizes at a first temperature T1. When the temperature measured by the temperature sensor 150 stabilizes at the first temperature T1, the control unit 2 controls the power adjustment unit 200 and measures the second power P2 supplied by the power adjustment unit 200 to the heater 118 (step S50). Furthermore, step S50 is performed while plasma is being generated, i.e., after plasma generation.

[0063] Next, the control unit 2 calculates the amount of heat input from the plasma per unit time, Qin, based on the first power P1 and the second power P2, in the state of plasma generation (step S60). When the heat generated by the heater 118 per unit time when the first power P1 is supplied to the heater 118 is defined as heat Q1, and the heat generated by the heater 118 per unit time when the second power P2 is supplied to the heater 118 is defined as heat Q2, the amount of heat input, Qin, is expressed by Equation 4.

[0064]

Number 4

[0065] Qin = Q1 - Q2... (Equation 4)

[0066] The method for calculating the power of heater 118 will be explained. For example, assume that the power adjustment unit 200 controls the power of heater 118 using PWM (Pulse Width Modulation) control. First, the case where the power adjustment unit 200 supplies DC voltage to heater 118 will be explained. When the heater resistance of heater 118 is set to Rhtr (ohms), the DC voltage supplied from the power adjustment unit 200 is set to Vsup (volts), the duty cycle during PWM control is set to p (%), and the heat output per unit time from heater 118 is set to Phtr (watts), the power output from heater 118 is expressed by Equation 5.

[0067]

Number 5

[0068]

[0069] The amount of heat generated per unit time from heater 118 is calculated using the power calculated by Equation 5.

[0070] Next, the supply of AC voltage from the power adjustment unit 200 to the heater 118 will be explained. When the heater resistance of the heater 118 is set to Rhtr (ohms), the amplitude of the AC voltage supplied from the power adjustment unit 200 is set to Vsup2 (volts), the duty cycle during PWM control is set to p (%), and the heat output per unit time from the heater 118 is set to Phtr (watts), the power output from the heater 118 is represented by Equation 6. Furthermore, cosθ represents the power factor.

[0071]

Number 6

[0072]

[0073] The amount of heat generated per unit time from heater 118 is calculated using the power calculated by Equation 6.

[0074] In addition, when the set temperature Tset before calibration is set as Tset1 (°C) and the set temperature Tset after calibration is set as Tset2 (°C), the set temperature Tset2 is represented as shown in Equation 7.

[0075]

Number 7

[0076]

[0077] Furthermore, in Equation 7, for example, the heat Q1 is set as Q1 (watts), the heat input Qin is set as Qin (watts), the thermal resistance Rht is set as Rht (Kelvin / watts), and the thermal resistance Rsh is set as Rsh (Kelvin / watts).

[0078] Furthermore, the thermal resistance Rsh between the surface Se of the substrate support portion 116 and the heater 118, and the thermal resistance Rht between the heater 118 and the temperature sensor 150 are examples of the thermal resistance between the substrate support portion 116 and the temperature sensor 150.

[0079] Furthermore, when it is desired to control the temperature of the wafer placed on the substrate support surface 111a, the set temperature Tsetw is expressed as shown in Equation 8 when the thermal resistance of the wafer is set to Rw (Kelvin / Watt), the contact thermal resistance between the wafer and the substrate support surface 111a is set to Rcon (Kelvin / Watt), and the corrected set temperature Tset is set to Tsetw (°C).

[0080]

Number 8

[0081]

[0082] Furthermore, in Equation 8, for example, the heat Q1 is set as Q1 (watts), the heat input Qin is set as Qin (watts), the thermal resistance Rht is set as Rht (Kelvin / watts), and the thermal resistance Rsh is set as Rsh (Kelvin / watts).

[0083] Furthermore, the thermal resistance Rsh between the surface Se of the substrate support portion 116 and the heater 118, the thermal resistance Rw of the wafer, the contact thermal resistance Rcon between the wafer and the substrate support surface 111a, and the thermal resistance Rht between the heater 118 and the temperature sensor 150 are examples of the thermal resistance between the substrate W and the temperature sensor 150.

[0084] Furthermore, while the substrate support surface 111a has been described above, the same process can be applied to the annular region (annular support surface) 111b of the annular member used to support the ring assembly 112 to adjust the temperature of the annular member of the ring assembly 112 to the desired temperature.

[0085] For example, it can also be configured such that the annular region 111b of the main body 111 includes a heater (second heater), a power adjustment unit (second power adjustment unit) that supplies power to the heater (second heater), and a temperature sensor (second temperature sensor) that measures the temperature of the annular support surface 111b.

[0086] Furthermore, the number of heaters 118 and temperature sensors 150 in the substrate support portion 116 was not mentioned in the above description, but there may be multiple heaters 118 and temperature sensors 150. That is, the substrate support portion 116 may also be configured to have multiple regions, and each of the multiple regions may have a heater 118 and a temperature sensor 150. Similarly, when a second heater is provided in the annular region 111b of the main body portion 111, the annular region 111b may also be configured to have multiple regions, and each of the multiple regions may have a second temperature sensor.

[0087] <Function / Effect>

[0088] According to the plasma processing apparatus 1 disclosed herein, the temperature control of a substrate placed on a substrate support can be improved while plasma is being generated.

[0089] It should be considered that all aspects of the plasma processing method and apparatus disclosed herein are illustrative rather than limiting. The above embodiments can be modified and improved in various ways without departing from the appended claims and their spirit. The matters described in the above embodiments can be employed in other structures and combinations without contradiction.

[0090] Explanation of reference numerals in the attached figures

[0091] 1: Capacitively coupled plasma processing device; 2: Control unit; 10: Plasma processing chamber; 11: Substrate support; 20: Gas supply unit; 30: Power supply; 111: Main body; 111a: Substrate support surface; 111a: Central region (substrate support surface); 111b: Annular region (ring support surface); 112: Ring assembly; 115: Base; 115a: Base body; 115c: Flow path; 116: Substrate support; 117: Adhesive layer; 118: Heater; 150: Temperature sensor; 200: Power adjustment unit.

Claims

1. A plasma processing method, said method being performed by a plasma processing apparatus, said plasma processing apparatus comprising: abutment; A substrate support portion is disposed on the base platform, the substrate support portion having a substrate support surface for supporting the substrate; A heater is disposed inside the substrate support portion, and the heater is capable of adjusting the temperature of the substrate support surface; A temperature sensor is used to measure the temperature of the substrate support surface; and A power adjustment unit, used to adjust the power supplied to the heater. The plasma treatment method includes the following steps: The set temperature of the substrate support surface is set to a first temperature; Power is supplied to the heater from the power adjustment unit; Before plasma generation, when the temperature of the substrate support surface measured by the temperature sensor stabilizes at the first temperature, the first power supplied by the power adjustment unit to the heater is measured. After the plasma is generated, when the temperature of the substrate support surface measured by the temperature sensor stabilizes at the first temperature, the second power supplied by the power adjustment unit to the heater is measured. The heat input from the plasma is calculated based on the first power and the second power. as well as The first temperature is corrected to the second temperature based on the calculated heat input and the thermal resistance between the substrate support or the substrate and the temperature sensor.

2. The plasma treatment method according to claim 1, characterized in that, The substrate support includes a dielectric body and electrodes disposed within the body.

3. The plasma treatment method according to claim 1 or 2, characterized in that, The temperature sensor is positioned closer to the base than the heater.

4. The plasma treatment method according to claim 1 or 2, characterized in that, The substrate support portion has multiple regions. The heater is provided in each of the plurality of regions.

5. The plasma treatment method according to claim 4, characterized in that, Each of the plurality of regions also includes the temperature sensor.

6. The plasma treatment method according to claim 1 or 2, characterized in that, The power adjustment unit adjusts the power supplied to the heater so that the temperature measured by the temperature sensor becomes the set temperature.

7. The plasma treatment method according to claim 1 or 2, characterized in that, The plasma processing device also includes: A ring support portion disposed on the base, the ring support portion having a ring support surface for supporting a ring-shaped member; A second heater is available to adjust the temperature of the annular component; A second temperature sensor is used to measure the temperature of the ring support surface; as well as The second power adjustment unit is used to adjust the power supplied to the second heater. The plasma treatment method further includes the following steps: Set the set temperature of the ring support surface to the third temperature; Power is supplied from the second power adjustment unit to the second heater; Before the plasma is generated, when the temperature of the ring support surface, as measured by the second temperature sensor, stabilizes at the third temperature, the third power supplied by the second power adjustment unit to the second heater is measured. After the plasma is generated, when the temperature of the ring support surface, as measured by the second temperature sensor, stabilizes at the third temperature, the fourth power supplied by the second power adjustment unit to the second heater is measured. The heat input from the plasma is calculated based on the third and fourth electrical powers. as well as The third temperature is corrected to a fourth temperature based on the calculated heat input and the thermal resistance between the ring support or the ring member and the second temperature sensor.

8. The plasma treatment method according to claim 7, characterized in that, The ring support portion is disposed separately from the substrate support portion.

9. The plasma treatment method according to claim 7, characterized in that, The second temperature sensor is positioned closer to the base than the second heater.

10. The plasma processing method according to claim 7, characterized in that, The ring support portion has multiple regions. Each of the plurality of regions is provided with the second heater.

11. The plasma processing method according to claim 10, characterized in that, Each of the plurality of regions also includes a second temperature sensor.

12. A plasma processing method, said method being performed by a plasma processing apparatus, said plasma processing apparatus comprising: abutment; A ring support portion disposed on the base, the ring support portion having a ring support surface for supporting a ring-shaped member; A second heater is available to adjust the temperature of the annular component; A second temperature sensor is used to measure the temperature of the ring support surface; as well as The second power adjustment unit is used to adjust the power supplied to the second heater. The plasma treatment method includes the following steps: Set the set temperature of the ring support surface to the third temperature; Power is supplied from the second power adjustment unit to the second heater; Before plasma generation, when the temperature of the ring support surface, as measured by the second temperature sensor, stabilizes at the third temperature, the third power supplied by the second power adjustment unit to the second heater is measured. After the plasma is generated, when the temperature of the ring support surface, as measured by the second temperature sensor, stabilizes at the third temperature, the fourth power supplied by the second power adjustment unit to the second heater is measured. The heat input from the plasma is calculated based on the third and fourth electrical powers. as well as The third temperature is corrected to a fourth temperature based on the calculated heat input and the thermal resistance between the ring support or the ring member and the second temperature sensor.

13. The plasma processing method according to claim 12, characterized in that, The second temperature sensor is positioned closer to the base than the second heater.

14. The plasma treatment method according to claim 12 or 13, characterized in that, The ring support portion has multiple regions. Each of the plurality of regions is provided with the second heater.

15. The plasma processing method according to claim 14, characterized in that, Each of the plurality of regions also includes a second temperature sensor.

16. A plasma processing apparatus comprising: abutment; A substrate support portion is disposed on the base platform, the substrate support portion having a substrate support surface for supporting the substrate; A heater is disposed within the substrate support portion, and the heater is capable of adjusting the temperature of the substrate support surface; A temperature sensor for measuring the temperature of the substrate support surface; A power adjustment unit, used to adjust the power supplied to the heater; Plasma generation unit, which is used to generate plasma; as well as Control Department The control unit performs the following steps: The set temperature of the substrate support surface is set to a first temperature; The power adjustment unit supplies power to the heater; Before the plasma is generated, when the temperature of the substrate support surface measured by the temperature sensor is stable at the first temperature, the first power supplied by the power adjustment unit to the heater is measured. After the plasma is generated, when the temperature of the substrate support surface measured by the temperature sensor stabilizes at the first temperature, the second power supplied by the power adjustment unit to the heater is measured. The heat input from the plasma is calculated based on the first power and the second power; and The first temperature is corrected to the second temperature based on the calculated heat input and the thermal resistance between the substrate support or the substrate and the temperature sensor.

17. The plasma processing apparatus according to claim 16, characterized in that, The temperature sensor is positioned closer to the base than the heater.

18. A plasma processing apparatus comprising: abutment; A ring support portion disposed on the base, the ring support portion having a ring support surface for supporting a ring-shaped member; A heater that can adjust the temperature of the annular component; A temperature sensor for measuring the temperature of the ring support surface; A power adjustment unit, used to adjust the power supplied to the heater; Plasma generation unit, which is used to generate plasma; as well as Control Department The control unit performs the following steps: Set the set temperature of the ring support surface to a first temperature; Power is supplied to the heater from the power adjustment unit; Before plasma generation, when the temperature of the ring support surface, as measured by the temperature sensor, stabilizes at the first temperature, the first power supplied by the power adjustment unit to the heater is measured. After the plasma is generated, when the temperature of the ring support surface, as measured by the temperature sensor, stabilizes at the first temperature, the second power supplied by the power adjustment unit to the heater is measured. The heat input from the plasma is calculated based on the first power and the second power; and The first temperature is corrected to the second temperature based on the calculated heat input and the thermal resistance between the ring support or the ring member and the temperature sensor.

19. The plasma processing apparatus according to claim 18, characterized in that, The temperature sensor is positioned closer to the base than the heater.

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