Integrated Sensors

Abstract

This invention discloses an integrated sensor based on dynamic voltage control, comprising: a magnetic sensor formed as a magnetic multilayer film structure with magnetic anisotropy; an actuator providing magnetization direction conversion conditions for the magnetic sensor; a detector detecting the magnetic sensor's magnetic field conversion direction state and converting it into an electrical signal; and a feedback control unit, which records statistical information on the magnetic sensor's magnetic field conversion direction state, modifies the magnetization direction conversion conditions based on this statistical information, and sends a command to the actuator to change the magnetization direction conversion conditions. The unit converts the recorded magnetic sensor magnetic field conversion direction state statistics and magnetization direction conversion conditions into an output electrical signal. This invention leverages dynamic voltage to improve sensor accuracy and provides a high dynamic range and a large, reliable signal. This invention can be combined with other mechanisms to realize multi-parameter sensors.

Description

Technical Field

[0001] This invention relates to the field of storage, and in particular to an integrated sensor based on dynamic voltage control. Background Technology

[0002] Magnetic multilayer films are metallic magnetic multilayer films composed of alternating ferromagnetic and non-ferromagnetic layers. They typically exhibit giant magnetoresistance (GMR) effects, with each layer having a thickness on the nanometer scale. Spin valve (SV) or magnetic tunnel junction (MTJ) structures have been widely used in magnetic random access memory (MRAM) and magnetic sensors.

[0003] Integrated temperature sensors are crucial for the reliability of semiconductor devices. Traditional transistor-based temperature sensors are circuits that are proportional to or inversely proportional to the absolute temperature (PTAT and CTAT). These designs detect changes in transistor characteristics (e.g., threshold voltage) at different temperatures to extract the absolute temperature. However, these designs typically involve non-CMOS transistor processes (e.g., BJTs), resulting in limited sensitivity, and the variation problem remains a challenge. Reference: Wikipedia: https: / / wiki.analog.com / university / courses / electronics / text / chapter-14.

[0004] In recent years, integrated magnetic devices have been proposed as temperature sensors. Many of these designs are based on magnetic tunnel junctions (MTJs). A magnetic tunnel junction (MTJ) is a multilayer film consisting of a magnetic layer, an insulating barrier, and another magnetic layer. One magnetic layer can freely change its magnetization according to the applied bias voltage (free layer), while the other has a relatively fixed magnetization (fixed layer). MTJ[ Figure 1a The resistance of two layers varies depending on their relative orientation; for example, the resistance is higher (AP) when the two layers are antiparallel and lower (P) when the two layers are parallel. This ratio is called the tunneling magnetoresistance ratio (TMR). Figure 1b Resistors can be used to electrically characterize the magnetic state of a device.

[0005] In the prior art, there are two main design types of MTJ-based temperature sensors. Dynamic sensors detect changes in dynamic switching statistics, such as probability and switching time (a function of temperature). Static sensors detect changes in static characteristics, such as tunneling magnetoresistance ratio, saturation magnetization, or resistance as a function of temperature.

[0006] The most widely used dynamic MRAM temperature sensors utilize the thermal stability of the device for detection. Hold time (e.g., the device's average transition time) is exponentially related to thermal stability, which is inversely proportional to temperature. For example:

[0007] Retention_time=a*e^(thermal_stability)

[0008] Thermal_stability=energy_barrier / KbT

[0009] Retention time = a * e^(thermal stability)

[0010] Thermal stability = energy barrier / KbT.

[0011] The hold time varies with temperature, so the temperature can be extracted from the average time between switching events. Figure 2a . Figure 2c This is illustrated in the diagram. Due to the exponential relationship, this design exhibits high sensitivity. The drawback of this approach is that the exponential relationship results in a small dynamic range and slow speed, as minute temperature changes cause the retention time to vary exponentially. A design to address this issue utilizes spin-transfer torque (STT) biasing and spin-orbit torque (SOT) biasing, detecting the switching probability under bias. This biasing of the switching probability is disclosed in [Magnetic Tunnel Junction as a Chip Temperature Sensor, Scientific Reports, 2017].

[0012] Static MTJ temperature sensors typically detect changes in magnetic properties, such as in US Patent 20160104544A1 or US Patent 7511990B2; Magnetic tunnel junctions as embedded nanostructure temperature sensors, as described in the Journal of Applied Physics, 2018, as a variation with temperature. Scanning can be performed under different bias voltages to improve accuracy, and a combination of static and dynamic methods can further enhance accuracy. A challenge faced by existing feature-based MRAM sensors is their small signal size; for example, resistance changes by less than 0.5% per degree Kelvin.

[0013] Work on temperature sensing using voltage-controlled (VC-) MTJs is rare. A voltage-controlled MTJ is one whose magnetization can be adjusted by voltage, typically increasing or decreasing the magnetization. A previous work proposed sensing temperature by detecting changes in static AP state resistance and dynamic thermal stability, and discussed the effects of different detection voltage scans; this was presented at [PMTJ Temperature Sensors Utilizing VC at the IEEE International Symposium on Circuits and Systems, 2019].

[0014] As mentioned earlier, dynamic MTJ sensors have high sensitivity but low speed and small dynamic range. Static MTJ sensors have small signals and slow speed. Currently, no system possesses the capabilities of large signal, high speed, and large dynamic range. To achieve the desired goals, it is necessary to establish a feedback system. Summary of the Invention

[0015] The summary of this invention introduces a series of simplified concepts, all of which are simplifications of existing technologies in the field, and will be further explained in detail in the detailed description section. This summary is not intended to limit the key features and essential technical features of the claimed technical solution, nor is it intended to determine the scope of protection of the claimed technical solution.

[0016] To address the shortcomings of existing technologies, this invention provides an integrated sensor based on dynamic voltage control, comprising:

[0017] A magnetic sensor is formed as a magnetic multilayer film structure with magnetic anisotropy;

[0018] A driver, which provides the magnetization direction conversion conditions for a magnetic sensor;

[0019] A detector that detects the conversion of the magnetic field direction state of a magnetic sensor into an electrical signal;

[0020] The feedback control unit records the statistical information of the magnetic field conversion direction of the magnetic sensor. It modifies the magnetization direction conversion condition based on the statistical information and sends a command to the driver to change the magnetization direction conversion condition. It converts the recorded statistical information of the magnetic field conversion direction of the magnetic sensor and the magnetization direction conversion condition into an electrical signal for the output result.

[0021] Alternatively, the integrated sensor can be implemented based on the VCMA effect or a combination of VCMA (voltage-controlled magnetic anisotropy), STT (spin-torque conversion), SOT (hybrid spin-orbit torque) and other magnetic principles.

[0022] Alternatively, the integrated sensor may be configured as an MTJ or Hallbar structure.

[0023] Optionally, the integrated sensor, wherein the magnetic sensor is an MTJ, and the magnetic field conversion direction state of the magnetic sensor is characterized by resistance;

[0024] The magnetic sensor is a Hallbar, and the magnetic field switching state of the magnetic sensor represents the current or voltage.

[0025] Alternatively, the integrated sensor may have magnetization direction conversion conditions including at least one of voltage (V), current (I), time (T), or magnetic field (H).

[0026] Optionally, the integrated sensor, wherein the magnetic field conversion direction state statistics of the magnetic sensor are based on time series, frequency and probability distribution statistical description.

[0027] For example, when the magnetization direction switching condition is voltage, the magnetic field switching direction status statistics of the magnetic sensor is the number of magnetization direction switching times per second, which can be used to detect temperature.

[0028] And / or, when the magnetization direction switching condition is a bias field, the magnetic field switching direction state statistics of the magnetic sensor are the percentage of 0 and 1 states in the magnetization direction switching, which can be used to detect the magnetic field;

[0029] Therefore, the integrated sensor provided by the present invention can be used to detect temperature, detect magnetic field, or detect both temperature and magnetic field.

[0030] Optionally, the integrated sensor and feedback control unit employ the following control mechanism to modify the magnetization direction conversion conditions;

[0031] S1, perform initial adjustment to make the magnetization direction switching frequency and thermal stability compatible;

[0032] S2, provide a first magnetization direction conversion condition, obtain the first conversion rate corresponding to the first magnetization direction conversion condition, determine whether the first conversion rate is equal to the first target conversion rate, if not equal, adjust the first magnetization direction conversion condition until the first conversion rate is equal to the first target conversion rate;

[0033] S3, convert the first conversion rate and its corresponding first magnetization direction conversion condition to obtain the output result electrical signal;

[0034] Wherein, the first magnetization direction conversion condition is voltage, and the first conversion rate is the number of magnetization direction conversions per second;

[0035] Alternatively, when the first magnetization direction conversion condition is a bias field, the first conversion rate is the percentage of states transitioning to 0 and 1 during the magnetization direction conversion.

[0036] Optionally, the integrated sensor and feedback control unit employ the following control mechanism to modify the magnetization direction conversion conditions;

[0037] S1′ is used for initial adjustment to make the magnetization direction switching frequency and thermal stability compatible;

[0038] S2′ provides a first magnetization direction conversion condition, obtains a first conversion rate corresponding to the first magnetization direction conversion condition, determines whether the first conversion rate is equal to the first target conversion rate, and if not equal, adjusts the first magnetization direction conversion condition until the first conversion rate is equal to the first target conversion rate;

[0039] S3′ provides a second magnetization direction conversion condition, obtains the second conversion rate corresponding to the second magnetization direction conversion condition, determines whether the second conversion rate is equal to the second target conversion rate, and if not equal, adjusts the second magnetization direction conversion condition until the second conversion rate is equal to the second target conversion rate;

[0040] S4′, convert the first slew rate and its corresponding first magnetization direction conversion condition, and the second slew rate and its corresponding second magnetization direction conversion condition to obtain the output electrical signal respectively;

[0041] The first magnetization direction switching condition is voltage, the first conversion rate is the number of magnetization direction switching times per second, the second magnetization direction switching condition is bias field, and the second conversion rate is the percentage of switching to 0 and 1 states during magnetization direction switching.

[0042] It should be further explained that numerous factors influence the characteristics of a device; therefore, the sensor can only obtain accurate measurement results when other factors are kept constant. Most characteristics change relatively little, while magnetic fields can have a significant impact. For example, when a very strong magnetic field is applied, the device will be pinned to the direction of the magnetic field, and its orientation cannot be changed regardless of temperature or applied voltage. Therefore, by combining the measurements of both voltage and applied bias field, temperature and magnetic field can be characterized more accurately.

[0043] It should be further noted that a combination of VCMA and SOT can also be used in this invention. Figure 3 The VC-SOT device is shown. In this design, the SOT current Ibias\U SOT can be used in-situ or in conjunction with the bias condition Hbias to detect temperature and / or magnetic fields. Other spin mechanisms, such as VC Skrymion, VC domain walls, etc., can also be employed. Multiple magnetic devices with different characteristics (e.g., MTJs of different sizes; different VC strengths, etc.) can be used together to improve speed and accuracy.

[0044] This invention leverages dynamic voltage (VC) to improve sensor accuracy, providing a high dynamic range and a large, reliable signal. It can be combined with other mechanisms (such as VC-SOT, VC-Skyrmion, etc.) to realize multi-parameter sensors. This invention achieves at least the following technical effects:

[0045] (1) It has the ability to adjust thermal stability based on the VC effect;

[0046] (2) Dynamic switching can detect large signals generated by the device;

[0047] (3) Lock the system and lock it to the feedback system of the target value;

[0048] (4) Implementation based on multiple devices with different characteristics (thermal stability, VCMA coefficient, etc.). Multi-parameter sensing can be achieved by having multiple different control signals and spin mechanisms. A dynamic balance is achieved between the detection signal, sensitivity, and dynamic detection range. Attached Figure Description

[0049] The accompanying drawings are intended to illustrate the general characteristics of the methods, structures, and / or materials used in specific exemplary embodiments of the invention, supplementing the description in the specification. However, the drawings are schematic diagrams not drawn to scale and may not accurately reflect the precise structural or performance characteristics of any of the given embodiments. The drawings should not be construed as limiting or restricting the range of numerical values ​​or properties covered by exemplary embodiments of the invention. The invention will now be described in further detail with reference to the accompanying drawings and specific embodiments:

[0050] Figure 1a This is a schematic diagram of a magnetic tunnel junction (MTJ), which consists of two magnetic layers separated by an insulating barrier. When the two layers are magnetized and aligned, the device exhibits low resistance; conversely, the resistance is high.

[0051] Figure 1b This is a schematic diagram of a magnetic tunneling junction (MTJ). When the two layers are antiparallel, the resistance is higher (AP), and when the two layers are parallel, the resistance is lower (P). This ratio is called the tunneling magnetoresistance ratio (TMR), which can be used to electrically characterize the magnetic state of the device.

[0052] Figure 2a This is a schematic diagram of the operation mechanism of the dynamic MTJ sensor, showing the relationship between thermal stability and retention time, as well as the relationship between PMA and applied voltage.

[0053] Figure 2b This is the second schematic diagram of the operating mechanism of the dynamic MTJ sensor. The simulation results show the combined relationship between thermal stability, retention time, and voltage.

[0054] Figure 2c This is a schematic diagram of the operating mechanism of a dynamic MTJ sensor. Figure 3 The state fluctuation of its display device under thermal noise, and the average time of the fluctuation is the retention time.

[0055] Figure 3 This is a schematic diagram of the overall structure of the present invention.

[0056] Figure 4a This is a schematic diagram of the control mechanism of the feedback control unit of the present invention.

[0057] Figure 4b This is a schematic diagram of the control mechanism of the feedback control unit of the present invention. Detailed Implementation

[0058] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can fully understand other advantages and technical effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through different specific embodiments, and various details in this specification can also be applied based on different viewpoints, with various modifications or changes made without departing from the overall design concept of the invention. It should be noted that, in the absence of conflict, the following embodiments and features in the embodiments can be combined with each other. The following exemplary embodiments of the present invention can be implemented in many different forms and should not be construed as being limited to the specific embodiments set forth herein. It should be understood that these embodiments are provided so that the disclosure of the present invention is thorough and complete, and that the technical solutions of these exemplary embodiments are fully conveyed to those skilled in the art. It should be understood that when an element is referred to as "connected" or "combined" to another element, the element can be directly connected or combined to the other element, or there may be intermediate elements. The difference is that when an element is referred to as "directly connected" or "directly combined" to another element, there are no intermediate elements. Throughout the drawings, the same reference numerals always denote the same elements. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0059] First embodiment;

[0060] refer to Figure 3 As shown, the present invention provides an integrated sensor based on dynamic voltage control, comprising:

[0061] A magnetic sensor is formed as a magnetic multilayer film structure with magnetic anisotropy, which can be implemented based on VCMA, STT or SOT, and can be formed as an MTJ or Hallbar structure, for example.

[0062] A driver, which provides the magnetization direction conversion conditions for a magnetic sensor;

[0063] A detector that detects the conversion of the magnetic field direction state of a magnetic sensor into an electrical signal;

[0064] The feedback control unit records the statistical information of the magnetic field conversion direction of the magnetic sensor, modifies the magnetization direction conversion condition based on the statistical information of the magnetic field conversion direction of the magnetic sensor, and sends a command to the driver to change the magnetization direction conversion condition. It converts the recorded statistical information of the magnetic field conversion direction of the magnetic sensor and the magnetization direction conversion condition into an electrical signal of the output result.

[0065] Optionally, when the magnetic sensor is an MTJ, its magnetic field conversion direction state is characterized by resistance;

[0066] Optionally, when the magnetic sensor is a Hallbar, the magnetic field conversion direction state of the magnetic sensor represents the current or voltage.

[0067] Second embodiment;

[0068] Continue to refer to Figure 3 As shown, the present invention provides an integrated sensor based on dynamic voltage control, comprising:

[0069] A magnetic sensor is formed as a magnetic multilayer film structure with magnetic anisotropy, which can be implemented based on VCMA, STT or SOT, and can be formed as an MTJ or Hallbar structure, for example.

[0070] A driver, which provides the magnetization direction conversion conditions for a magnetic sensor;

[0071] A detector that detects the conversion of the magnetic field direction state of a magnetic sensor into an electrical signal;

[0072] The feedback control unit records the statistical information of the magnetic field conversion direction of the magnetic sensor, modifies the magnetization direction conversion condition based on the statistical information of the magnetic field conversion direction of the magnetic sensor, and sends a command to the driver to change the magnetization direction conversion condition. It converts the recorded statistical information of the magnetic field conversion direction of the magnetic sensor and the magnetization direction conversion condition into an electrical signal of the output result.

[0073] Optionally, when the magnetic sensor is an MTJ, its magnetic field conversion direction state is characterized by resistance;

[0074] Optionally, when the magnetic sensor is a Hallbar, the magnetic field conversion direction state of the magnetic sensor represents the current or voltage.

[0075] The magnetization direction conversion conditions include at least one of the following: voltage (V), current (I), time (T), or magnetic field (H), and there may also be a combination of two or more.

[0076] It should be further explained that when the magnetization direction conversion condition is voltage, the statistical information of the magnetic field conversion direction status of the magnetic sensor is the number of magnetization direction conversions per second;

[0077] And / or, when the magnetization direction conversion condition is a bias field, the magnetic field conversion direction state statistics of the magnetic sensor are the percentage of 0 and 1 states during the magnetization direction conversion.

[0078] Furthermore, it should be understood that although the terms "first," "second," etc., may be used herein to describe different elements, parameters, components, regions, layers, and / or portions, these elements, parameters, components, regions, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, parameter, component, region, layer, or portion from another element, parameter, component, region, layer, or portion. Therefore, without departing from the teachings of exemplary embodiments according to the present invention, the first element, parameter, component, region, layer, or portion discussed below may also be referred to as the second element, parameter, component, region, layer, or portion.

[0079] Third embodiment;

[0080] refer to Figure 4a As shown, the present invention provides a mechanism for modifying the magnetization direction conversion condition by a feedback control unit, which can be used in the structure described in the first embodiment or the second embodiment above;

[0081] S1, perform initial adjustment to make the magnetization direction switching frequency and thermal stability compatible; for example, for a magnetization direction switching frequency on the order of nanoseconds, the thermal stability is reduced to between 0 and 10.

[0082] S2, provide a first magnetization direction conversion condition, obtain the first conversion rate corresponding to the first magnetization direction conversion condition, determine whether the first conversion rate is equal to the first target conversion rate, if not equal, adjust the first magnetization direction conversion condition until the first conversion rate is equal to the first target conversion rate;

[0083] If the first conversion rate is detected to be lower than the first target conversion rate, the magnetization direction conversion condition parameter is increased; if the first conversion rate is detected to be higher than the first target conversion rate, the magnetization direction conversion condition parameter is decreased.

[0084] S3, an electrical signal that converts the first conversion rate and its corresponding first magnetization direction conversion condition to obtain the output result: used to characterize temperature or magnetic field;

[0085] Wherein, the first magnetization direction conversion condition is voltage, and the first conversion rate is the number of magnetization direction conversions per second, used to characterize the detected temperature;

[0086] Alternatively, when the first magnetization direction conversion condition is a bias field, the first conversion rate is the percentage of the magnetization direction conversion from 0 to 1 states, used to characterize the detected magnetic field.

[0087] Based on the feedback control unit control mechanism of the third embodiment above, the statistical information of the magnetic field conversion direction state of the magnetic sensor is based on time series, frequency and probability distribution statistical description. The following example of adjusting voltage is provided (the principle of applying a bias field to detect the magnetic field is the same and will not be repeated) for further explanation.

[0088] In the unstarted stage, the magnetization direction conversion condition V_bias=0, and the first conversion rate f_sw=0.2Hz is detected;

[0089] Initial adjustments were made to ensure that the magnetization direction switching frequency and thermal stability were compatible.

[0090] Increase V_bias = 0.1 and detect the first conversion rate f_sw = 2Hz;

[0091] Continue increasing V_bias = 0.2, and check the first conversion rate f_sw = 20Hz;

[0092] Continue increasing V_bias = 0.3, and check the first conversion rate f_sw = 200Hz;

[0093] ...

[0094] Continue to increase V_bias = 0.9 and detect the first conversion rate f_sw = 200Hz; if the first conversion rate remains unchanged after changing the magnetization direction conversion condition V_bias at least three times, then it is determined that the magnetization direction conversion frequency and thermal stability are compatible.

[0095] The magnetization direction conversion condition is provided: V_bias = 0.89. A first slew rate of f_sw = 170MHz is detected, which is less than the first target slew rate of f_target = 100MHz. It should be further noted that f_target is mainly determined based on the application scenario. The 100MHz used in the example is based on the core frequency of currently advanced MCUs. If the core frequency is higher, f_target can be increased; if the application scenario does not require high performance, f_target can be decreased.

[0096] The magnetization direction conversion condition is reduced to V_bias = 0.88. The first slew rate f_sw = 130MHz is detected, which is greater than the first target slew rate f_target = 100MHz.

[0097] Decrease the magnetization direction conversion condition, V_bias = 0.87, and detect the first slew rate f_sw = 100MHz, which is equal to the first target slew rate f_target = 100MHz;

[0098] A V_bias of 0.87 corresponds to a temperature of 35 degrees Celsius. It should be further noted that the temperature corresponding to V_bias will vary depending on the device parameters. For devices with high thermal stability, V_bias = 0.87 will correspond to a higher temperature; for devices with low thermal stability, V_bias = 0.87 will correspond to a lower temperature.

[0099] When the first magnetization direction conversion condition is a bias field, the first conversion rate is the percentage of the magnetization direction conversion from 0 to 1 state. It can be used to detect magnetic fields. The adjustment process is similar and will not be described in detail here.

[0100] Fourth embodiment;

[0101] refer to Figure 4b As shown, the present invention provides a mechanism for modifying the magnetization direction conversion condition by a feedback control unit, which can be used in the structure described in the first embodiment or the second embodiment above;

[0102] S1′ is used for initial adjustment to make the magnetization direction switching frequency and thermal stability compatible;

[0103] S2′ provides a first magnetization direction conversion condition, obtains a first conversion rate corresponding to the first magnetization direction conversion condition, determines whether the first conversion rate is equal to the first target conversion rate, and if not equal, adjusts the first magnetization direction conversion condition until the first conversion rate is equal to the first target conversion rate;

[0104] If the first conversion rate is detected to be lower than the first target conversion rate, the first magnetization direction conversion condition parameter is increased; if the first conversion rate is detected to be higher than the first target conversion rate, the first magnetization direction conversion condition parameter is decreased.

[0105] S3′ provides a second magnetization direction conversion condition, obtains the second conversion rate corresponding to the second magnetization direction conversion condition, determines whether the second conversion rate is equal to the second target conversion rate, and if not equal, adjusts the second magnetization direction conversion condition until the second conversion rate is equal to the second target conversion rate;

[0106] For example, if the second conversion rate is detected to be higher than the second target conversion rate, the second magnetization direction conversion condition is increased; if the second conversion rate is detected to be lower than the second target conversion rate, the second magnetization direction conversion condition is decreased.

[0107] The purpose of providing the above exemplary adjustment method is to explain that the system will adjust the magnetic field according to the conversion frequency. Since the magnetic field may be increased or decreased when it is higher or lower than the target conversion rate, it is possible to achieve this in practice. With a reasonable selection of the target conversion rate, the measured conversion rate can be made equal to the target conversion rate by adjusting the magnetization direction conversion conditions a finite number of times.

[0108] S4′, convert the first slew rate and its corresponding first magnetization direction conversion condition, and the second slew rate and its corresponding second magnetization direction conversion condition to obtain the output electrical signal respectively;

[0109] The first magnetization direction switching condition is voltage, the first conversion rate is the number of magnetization direction switching times per second, the second magnetization direction switching condition is bias field, and the second conversion rate is the percentage of switching to 0 and 1 states during magnetization direction switching.

[0110] Based on the feedback control unit control mechanism of the fourth embodiment described above, the statistical information of the magnetic field conversion direction state of the magnetic sensor is described based on time series, frequency and probability distribution statistics. The following example (adjusting the voltage and applying a bias field) is provided to further illustrate this.

[0111] In the unstarted stage, the magnetization direction conversion condition V_bias=0, and the first conversion rate f_sw=0.2Hz is detected;

[0112] Initial adjustments were made to ensure that the magnetization direction switching frequency and thermal stability were compatible.

[0113] Increase V_bias = 0.1 and detect the first conversion rate f_sw = 2Hz;

[0114] Continue increasing V_bias = 0.2, and check the first conversion rate f_sw = 20Hz;

[0115] Continue increasing V_bias = 0.3, and check the first conversion rate f_sw = 200Hz;

[0116] Continue increasing V_bias = 0.9, and check the first conversion rate f_sw = 200Hz;

[0117] If the first conversion rate remains unchanged after at least three changes to the magnetization direction switching condition V_bias, then the magnetization direction switching frequency and thermal stability are considered compatible.

[0118] The magnetization direction conversion condition is provided: V_bias = 0.89. A first slew rate of f_sw = 170MHz is detected, which is less than the first target slew rate of f_target = 100MHz. It should be further noted that f_target is mainly determined based on the application scenario. The 100MHz used in the example is based on the core frequency of currently advanced MCUs. If the core frequency is higher, f_target can be increased; if the application scenario does not require high performance, f_target can be decreased. Reducing V_bias to 0.89, the first slew rate f_sw is detected to be 170Hz.

[0119] Reduce V_bias = 0.88, and detect the first slew rate f_sw = 130Hz;

[0120] Reduce V_bias = 0.87, and detect the first conversion rate f_sw = 100Hz;

[0121] A V_bias of 0.87 corresponds to a temperature of 35 degrees Celsius. It should be further noted that the temperature corresponding to V_bias will vary depending on the device parameters. For devices with high thermal stability, V_bias = 0.87 will correspond to a higher temperature; for devices with low thermal stability, V_bias = 0.87 will correspond to a lower temperature. Let's set V_bias = 0.87 and f_sw = 100Hz.

[0122] When a bias field is applied, Hbias = 0, p(1) = 80%, the second conversion rate is lower than the second target conversion rate;

[0123] With Hbias = 10 and p(1) = 78%, the second conversion rate is higher than the second target conversion rate.

[0124] With Hbias = 20 and p(1) = 73%, the second conversion rate is higher than the second target conversion rate.

[0125] With Hbias = 30 and p(1) = 72%, the second conversion rate is higher than the second target conversion rate.

[0126] With Hbias = 40 and p(1) = 46%, the second conversion rate is lower than the second target conversion rate.

[0127] By reducing Hbias to 39 and p(1) to 47%, the second conversion rate is lower than the second target conversion rate.

[0128] By reducing Hbias to 38 and p(1) to 48%, the second conversion rate is lower than the second target conversion rate.

[0129] Reduce Hbias = 37, p(1) = 49%, the second conversion rate is equal to the second target conversion rate of 49%;

[0130] Decrease Hbias=37 to correspond to a detection magnetic field of 37.

[0131] The parameters described above are used as examples to illustrate the process of adjusting the conditions for the second magnetization direction conversion and should not be construed as limitations on the adjustment of the conditions for the second magnetization direction conversion.

[0132] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It will also be understood that, unless expressly defined herein, terms such as those defined in a general dictionary shall be interpreted as having the meaning consistent with their meaning in the relevant field context, and not as having an idealized or overly formal meaning.

[0133] The present invention has been described in detail above through specific embodiments and examples, but these are not intended to limit the invention. Many modifications and improvements can be made by those skilled in the art without departing from the principles of the invention, and these should also be considered within the scope of protection of the present invention.

Claims

1. An integrated sensor based on dynamic voltage control, characterized in that, include: A magnetic sensor is formed as a magnetic multilayer film structure with magnetic anisotropy; A driver, which provides the magnetization direction conversion conditions for a magnetic sensor; A detector that detects the conversion of the magnetic field direction state of a magnetic sensor into an electrical signal; The feedback control unit records the statistical information of the magnetic field conversion direction of the magnetic sensor, modifies the magnetization direction conversion condition based on the statistical information of the magnetic field conversion direction of the magnetic sensor, and sends a command to the driver to change the magnetization direction conversion condition. It converts the recorded statistical information of the magnetic field conversion direction of the magnetic sensor and the magnetization direction conversion condition into an electrical signal of the output result. The feedback control unit uses the following control mechanism to modify the magnetization direction conversion conditions; S1, perform initial adjustment to make the magnetization direction switching frequency and thermal stability compatible; S2, provide a first magnetization direction conversion condition, obtain the first conversion rate corresponding to the first magnetization direction conversion condition, determine whether the first conversion rate is equal to the first target conversion rate, if not equal, adjust the magnetization direction conversion condition until the first conversion rate is equal to the first target conversion rate; S3, convert the first conversion rate and its corresponding first magnetization direction conversion condition to obtain the output result electrical signal; Wherein, when the first magnetization direction conversion condition is voltage, the first conversion rate is the number of magnetization direction conversions per second; Alternatively, when the first magnetization direction conversion condition is a bias field, the first conversion rate is the percentage of states transitioning to 0 and 1 during the magnetization direction conversion.

2. The integrated sensor of claim 1, wherein: The magnetic sensor is implemented based on VCMA, STT or SOT.

3. The integrated sensor of claim 1, wherein: It is formed as an MTJ or Hallbar structure.

4. The integrated sensor as described in claim 3, characterized in that: The magnetic sensor is an MTJ, and its magnetic field conversion direction state is characterized by resistance. The magnetic sensor is a Hallbar, and the magnetic field switching state of the magnetic sensor represents the current or voltage.

5. The integrated sensor as described in claim 1, characterized in that... The magnetization direction conversion conditions include at least one of voltage (V), current (I), time (T), or magnetic field (H).

6. The integrated sensor as described in claim 1, characterized in that: The statistical information on the magnetic field conversion direction of the magnetic sensor is based on time series, frequency and probability distribution statistical description.

7. The integrated sensor as described in claim 1, characterized in that: The feedback control unit uses the following control mechanism to modify the magnetization direction switching conditions; S1′ is used for initial adjustment to make the magnetization direction switching frequency and thermal stability compatible; S2′ provides a first magnetization direction conversion condition, obtains a first conversion rate corresponding to the first magnetization direction conversion condition, determines whether the first conversion rate is equal to the first target conversion rate, and if not equal, adjusts the first magnetization direction conversion condition until the first conversion rate is equal to the first target conversion rate; S3′ provides a second magnetization direction conversion condition, obtains the second conversion rate corresponding to the second magnetization direction conversion condition, determines whether the second conversion rate is equal to the second target conversion rate, and if not equal, adjusts the second magnetization direction conversion condition until the second conversion rate is equal to the second target conversion rate; S4′, convert the first slew rate and its corresponding first magnetization direction conversion condition, and the second slew rate and its corresponding second magnetization direction conversion condition to obtain the output electrical signal respectively; The first magnetization direction switching condition is voltage, the first conversion rate is the number of magnetization direction switching times per second, the second magnetization direction switching condition is bias field, and the second conversion rate is the percentage of switching to 0 and 1 states during magnetization direction switching.

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