Temperature control system of vapor deposition apparatus, temperature control method, and storage medium
Patent Information
- Application Number
- CN202211287310.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-10-20
- Publication Date
- 2026-10-23
- Estimated Expiration
- 2042-10-20
AI Technical Summary
然而,TC的球形测温端与气相沉积设备的弧形侧壁为点接触,存在热阻大的缺陷,容易造成TC测温响应慢及测温结果误差大的问题
[0005]为了克服现有技术存在的上述缺陷,本发明提供了一种气相沉积设备的温控系统以及一种气相沉积设备的温控方法,能够根据感温材料的荧光衰减时间常数来确定气相沉积设备的弧形外壁的温度,从而快速、准确、高精度地测量并控制气相沉积设备的弧形外壁的温度,并且避免射频干扰耦合到测温探头上,从而进一步提高测温的准确性。
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Figure CN115542972B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor processing technology, and in particular to a temperature control system for a vapor deposition apparatus, a temperature control method for a vapor deposition apparatus, and a computer-readable storage medium. Background Technology
[0002] In semiconductor processing, temperature monitoring and regulation of the curved outer wall of a vapor deposition (VDC) apparatus are typically required. Current practice involves using metal-clad thermocouples (TCs) for temperature measurement and control. However, the spherical end of the TC makes point contact with the curved sidewall of the VDC apparatus, resulting in high thermal resistance and potentially causing slow temperature response and large measurement errors. Furthermore, the curved outer wall of the VDC apparatus is generally exposed to radio frequency (RF) interference, which can couple to the TC's thermocouple wires, affecting the accuracy of the temperature measurements.
[0003] In order to overcome the above-mentioned defects in the existing technology, there is an urgent need in the field for a temperature control system for a vapor deposition equipment to avoid the problems of slow temperature measurement response, large temperature measurement error, and radio frequency interference coupled to the temperature measurement probe, so as to quickly, accurately and with high precision measure and control the temperature of the arc-shaped outer wall of the vapor deposition equipment. Summary of the Invention
[0004] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.
[0005] To overcome the aforementioned deficiencies in the existing technology, this invention provides a temperature control system for a vapor deposition apparatus and a temperature control method for a vapor deposition apparatus. The system can determine the temperature of the arc-shaped outer wall of the vapor deposition apparatus based on the fluorescence decay time constant of the temperature-sensing material, thereby quickly, accurately, and with high precision measuring and controlling the temperature of the arc-shaped outer wall of the vapor deposition apparatus. Furthermore, it avoids radio frequency interference coupling to the temperature probe, thereby further improving the accuracy of temperature measurement.
[0006] Specifically, the temperature control system of the vapor deposition apparatus according to the first aspect of the present invention includes: at least one optical fiber probe having a temperature-sensing material at its end and contacting at least one detection point on the outer wall of the vapor deposition apparatus, wherein the temperature-sensing material emits fluorescence with a corresponding decay time constant according to its temperature under the action of a light source; an optical fiber having a first end connected to the optical fiber probe and a second end connected to a processor; and the processor being configured to: provide a light source to the optical fiber probe via the optical fiber; acquire the returned fluorescence from the optical fiber probe via the optical fiber; and determine the temperature of the corresponding detection point according to the decay time constant of the fluorescence.
[0007] Furthermore, in some embodiments of the present invention, the vapor deposition apparatus includes an HDP-CVD apparatus, and the temperature control system includes at least four fiber optic probes, wherein each fiber optic probe contacts at least four temperature zones on the arcuate outer wall of the vapor deposition apparatus, and the processor is further configured to: determine the temperature of each temperature zone on the arcuate outer wall; determine the temperature difference between each temperature zone based on the temperature of each temperature zone; and adjust the current temperature control strategy in response to a temperature difference between any two temperature zones exceeding a preset temperature difference threshold, so that the temperature difference falls back to the range of the temperature difference threshold.
[0008] Furthermore, in some embodiments of the present invention, the vapor deposition apparatus includes an HDP-CVD apparatus, and the temperature control system includes at least four fiber optic probes, wherein each fiber optic probe contacts at least four temperature zones on the arcuate outer wall of the vapor deposition apparatus, and the processor is further configured to: determine the temperature of each temperature zone on the arcuate outer wall; determine the heating rate of each temperature zone based on the temperature of each temperature zone; and adjust the current temperature control strategy in response to any temperature zone heating rate exceeding a preset heating rate threshold, so that the heating rate falls back to the range of the heating rate threshold.
[0009] Furthermore, in some embodiments of the present invention, the temperature control system includes a shielding cover, wherein the shielding cover surrounds the arcuate outer wall of the vapor deposition apparatus, and the processor is disposed outside the shielding cover to prevent radio frequency interference inside the vapor deposition apparatus.
[0010] Furthermore, in some embodiments of the present invention, the temperature control system includes: a probe guide seat, wherein the probe guide seat is fixed to the vapor deposition equipment near the outer wall, and the first end of the optical fiber passes through the probe guide seat so that the at least one optical fiber probe stably contacts at least one detection point on the outer wall of the vapor deposition equipment.
[0011] Furthermore, in some embodiments of the present invention, a locking screw, a pre-tightening spring, a limiting ring, and a probe mounting base are included. The locking screw, the pre-tightening spring, and the limiting ring are sequentially fitted around the outer periphery of the optical fiber. The limiting ring is clamped and fixed to a preset installation position on the optical fiber. The first end of the optical fiber passes sequentially through the probe mounting base and the probe guide seat. After the optical fiber probe contacts the outer wall of the vapor deposition equipment, the locking screw is tightened and fixed to the probe mounting base, compressing the pre-tightening spring to generate elastic force. The pre-tightening spring, via the limiting ring, transmits the elastic force to the first end of the optical fiber, so that the optical fiber probe stably contacts the detection point on the outer wall of the vapor deposition equipment.
[0012] Furthermore, in some embodiments of the present invention, the processor includes a temperature transmitter and a host computer, wherein the temperature transmitter is connected to the second end of the optical fiber and is configured to: provide a light source to the optical fiber probe via the optical fiber; acquire the returned fluorescence from the optical fiber probe via the optical fiber; and output a corresponding analog signal according to the decay time constant of the fluorescence; the host computer is connected to the output end of the temperature transmitter and is configured to: acquire the analog signal from the temperature transmitter; and determine the corresponding temperature data according to the analog signal.
[0013] Furthermore, in some embodiments of the present invention, the processor further includes a filter, wherein the filter is disposed between the temperature transmitter and the host computer, for filtering the analog signal output by the temperature transmitter, and transmitting the filtered analog signal to the host computer.
[0014] Furthermore, the temperature control method for a vapor deposition apparatus according to a second aspect of the present invention includes the following steps: providing a light source to an optical fiber probe via an optical fiber, wherein the end of the optical fiber probe is provided with a temperature-sensitive material and contacts a detection point on the outer wall of the vapor deposition apparatus, the temperature-sensitive material emitting fluorescence with a corresponding decay time constant according to the temperature under the action of the light source; acquiring the returned fluorescence from the optical fiber probe via the optical fiber; determining the temperature of the detection point according to the decay time constant of the fluorescence; and controlling the temperature of the vapor deposition apparatus according to the temperature of the detection point.
[0015] Furthermore, the computer-readable storage medium provided according to the third aspect of the present invention stores computer instructions thereon. When the computer instructions are executed by a processor, the temperature control method of the vapor deposition apparatus provided according to the second aspect of the present invention is implemented. Attached Figure Description
[0016] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.
[0017] Figure 1 A side cross-sectional schematic diagram of the temperature control system of a vapor deposition apparatus provided according to some embodiments of the present invention is shown.
[0018] Figure 2 A top cross-sectional schematic diagram of the temperature control system of a vapor deposition apparatus provided according to some embodiments of the present invention is shown.
[0019] Figure 3 A schematic diagram of the component fixing structure of an optical fiber probe provided according to some embodiments of the present invention is shown.
[0020] Figure 4 A flowchart of a temperature control method for a vapor deposition apparatus provided according to some embodiments of the present invention is shown.
[0021] Figure 5A A schematic diagram illustrating the correspondence between attenuation sampling values and attenuation time provided according to some embodiments of the present invention is shown.
[0022] Figure 5B A schematic diagram illustrating the relationship between decay time constant and temperature according to some embodiments of the present invention is shown. Detailed Implementation
[0023] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.
[0024] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.
[0025] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.
[0026] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.
[0027] As mentioned above, in the semiconductor processing field, it is typically necessary to monitor and regulate the temperature of the curved outer wall of a vapor deposition (VDC) apparatus. However, current practices in this field involve using a metal-clad thermocouple (TC) for temperature measurement and control. The spherical temperature sensing end of the TC makes point contact with the curved sidewall of the VDC apparatus, resulting in high thermal resistance, slow temperature response, and large measurement errors. Furthermore, the curved outer wall of the VDC apparatus is exposed to radio frequency (RF) interference, which couples to the thermocouple wire of the TC, affecting the accuracy of the temperature measurement results.
[0028] To overcome the aforementioned deficiencies in the existing technology, this invention provides a temperature control system for a vapor deposition apparatus. This system can determine the temperature of the arc-shaped outer wall of the vapor deposition apparatus based on the fluorescence decay time constant of the temperature-sensing material, thereby quickly, accurately, and with high precision measuring and controlling the temperature of the arc-shaped outer wall of the vapor deposition apparatus. Furthermore, it avoids radio frequency interference coupling to the temperature probe, thereby further improving the accuracy of temperature measurement.
[0029] In some non-limiting embodiments, the temperature control method for the vapor deposition apparatus provided in the second aspect of the present invention can be implemented via the temperature control system for the vapor deposition apparatus provided in the first aspect of the present invention. Further, the temperature control system for the vapor deposition apparatus may be configured with a memory and a processor. The memory includes, but is not limited to, the computer-readable storage medium provided in the third aspect of the present invention, on which computer instructions are stored. The processor is connected to the memory and configured to execute the computer instructions stored in the memory to implement the temperature control method for the vapor deposition apparatus provided in the second aspect of the present invention.
[0030] First, please refer to the reference. Figure 1 and Figure 2 , Figure 1 A side cross-sectional schematic diagram of the temperature control system of a vapor deposition apparatus provided according to some embodiments of the present invention is shown. Figure 2 A top cross-sectional schematic diagram of the temperature control system of a vapor deposition apparatus provided according to some embodiments of the present invention is shown.
[0031] like Figure 1 As shown, in some embodiments of the present invention, the temperature control system of the vapor deposition apparatus provided in the first aspect of the present invention includes at least one fiber optic probe 11, a corresponding number of fiber optics 12, and processors 26-28. Here, the end of the fiber optic probe 11 may be provided with a rare-earth temperature-sensitive material and contact a detection point 13 on the outer wall of the vapor deposition apparatus. The first end of the fiber optic 12 is connected to the fiber optic probe 11, and its second end is connected to the processors 26-28. The processors 26-28 are configured to implement the temperature control method of the vapor deposition apparatus provided in the second aspect of the present invention to detect and control the temperature of each detection point 13 on the outer wall of the vapor deposition apparatus.
[0032] Furthermore, in some embodiments of the present invention, the aforementioned vapor deposition equipment may include a high-density plasma chemical vapor deposition (HDP-CVD) device. The aforementioned temperature control system may include four fiber optic probes. Each fiber optic probe contacts one of the four temperature zones of the arcuate outer wall 14 of the vapor deposition equipment to measure the temperature difference between each zone and the heating rate of each zone. Thus, processors 26-28 can control the temperature of the HDP-CVD equipment based on the measured temperature difference between each zone and the heating rate of each zone, thereby preventing the arcuate outer wall of the HDP-CVD equipment from cracking due to excessive temperature difference or heating rate, and further preventing external contaminants from entering the process chamber through cracks to contaminate the chamber environment and wafers, or damage the molecular pump.
[0033] Please continue to refer to this. Figure 2 ,exist Figure 2In the illustrated embodiment, the temperature control system may further include a shielding cover 22. This shielding cover 22 surrounds the arcuate outer wall 14 of the vapor deposition apparatus, while the processor is located outside the shielding cover 22 to prevent radio frequency interference within the vapor deposition apparatus. Thus, the shielding cover 22 can confine internal radio frequency interference within its enclosure and conduct it to the ground via grounding, thereby preventing electromagnetic interference from the radio frequency interference on the entire machine and nearby electrical equipment, thus avoiding malfunction of these devices and preventing damage to the human central nervous system from radio frequency interference.
[0034] Furthermore, in some embodiments of the present invention, such as Figure 2 As shown, the temperature control system may further include a probe guide seat 23. The probe guide seat 23 is fixed to the vapor deposition equipment near the outer wall 14. The first end of the optical fiber 25 passes through the probe guide seat 23, so that at least one optical fiber probe 12 stably contacts at least one detection point 13 on the outer wall 14 of the vapor deposition equipment.
[0035] Please refer to the reference. Figure 1 , Figure 2 and Figure 3 , Figure 3 A schematic diagram of the component fixing structure of an optical fiber probe provided according to some embodiments of the present invention is shown.
[0036] exist Figure 3 In the illustrated embodiment, the temperature control system may include a locking screw 34, a preload spring 33, a limiting ring 32, and a probe mounting base 31. Here, the locking screw 34, the preload spring 33, and the limiting ring 32 are sequentially fitted around the outer periphery of the optical fiber 11. The limiting ring 32 is clamped and fixed to a preset mounting position on the optical fiber 11. The first end of the optical fiber passes sequentially through the probe mounting base 31 and the probe guide seat 23. After the optical fiber probe 12 contacts the outer wall 14 of the vapor deposition apparatus, the locking screw 34 is tightened and fixed to the probe mounting base 31, compressing the preload spring 33 to generate elastic force. The preload spring 33 transmits this elastic force to the first end of the optical fiber 11 via the limiting ring 32, ensuring that the optical fiber probe 12 stably contacts the detection point 13 on the outer wall 14 of the vapor deposition apparatus. Thus, the present invention can maintain continuous contact between the optical fiber probe and the outer wall under the action of preload force.
[0037] The temperature control system of the above-mentioned vapor deposition equipment will be described below with reference to some examples of temperature control methods.
[0038] Please refer to the reference. Figure 1 , Figure 2 and Figure 4 . Figure 4A flowchart of a temperature control method for a vapor deposition apparatus provided according to some embodiments of the present invention is shown.
[0039] like Figure 1 , Figure 2 and Figure 4 As shown, during the operation of the temperature control system of the vapor deposition apparatus, processors 26-28 can first provide a light source to the fiber optic probe 12 via the aforementioned optical fiber 11. Here, the end of the fiber optic probe 12 is provided with a temperature-sensing material, which contacts the detection point 13 on the outer wall of the vapor deposition apparatus. Under the influence of the light source, the temperature-sensing material emits fluorescence with a corresponding decay time constant based on its temperature. Then, processors 26-28 can acquire the returned fluorescence from the fiber optic probe 12 via the optical fiber 11. After acquiring the fluorescence, processors 26-28 can also determine the temperature of the detection point 13 based on the decay time constant of the fluorescence. Furthermore, processors 26-28 can also perform temperature control of the vapor deposition apparatus based on the temperature of the detection point 13.
[0040] In the embodiments of the HDP-CVD equipment described above, processors 26-28 can be further configured to: determine the temperature of each temperature zone of the arc-shaped outer wall 14 based on the decay time constant of the fluorescence. After confirming the temperature of each temperature zone, the temperature difference between each temperature zone is determined based on the temperature of each temperature zone. When the temperature difference between any two of the above temperature zones is greater than a preset temperature difference threshold, the current temperature control strategy is adjusted to bring the temperature difference back to the range of the temperature difference threshold. Similarly, after determining the temperature of each temperature zone of the arc-shaped outer wall 14, the present invention can determine the heating rate of each of the above temperature zones based on the temperature of each temperature zone. When the heating rate of any of the above temperature zones is greater than a preset heating rate threshold, the current temperature control strategy can be adjusted to bring the heating rate back to the range of the heating rate threshold.
[0041] Specifically, in some embodiments of the present invention, the processor may include a temperature transmitter 26 and a host computer 28. Here, the temperature transmitter 26 is connected to the second end of the optical fiber 11 and is configured to provide a light source to the optical fiber probe 12 via the optical fiber 11. When the rare-earth thermosensitive material of the optical fiber probe 11 comes into contact with the light emitted by the light source, it emits fluorescence with a corresponding decay time according to the temperature. The optical fiber 11 acquires the returned fluorescence from the optical fiber probe 12. After acquiring the fluorescence, a corresponding analog signal is output according to the decay time constant of the fluorescence. The host computer 28 is connected to the output end of the temperature transmitter and is configured to acquire the analog signal from the temperature transmitter 26. After acquiring the analog signal, the corresponding temperature data is determined based on the analog signal.
[0042] Furthermore, in some embodiments of the present invention, the processor may further include a filter 27. Here, the filter 27 is disposed between the temperature transmitter 26 and the host computer 28, for filtering the analog signal output by the temperature transmitter 26, and transmitting the filtered analog signal to the host computer 28.
[0043] Thus, the present invention can minimize the temperature difference between the above-mentioned temperature zones and ensure that the heating rate of each of the above-mentioned temperature zones does not exceed the above-mentioned rate threshold, thereby reducing the risk of the arc-shaped outer wall of the HDP-CVD equipment cracking due to excessive temperature difference or excessive heating rate, and further preventing external contaminants from entering the process chamber through cracks to contaminate the chamber environment and wafers, or damage the molecular pump.
[0044] Please refer to the reference. Figure 1 , Figure 2 , Figure 5A and Figure 5B . Figure 5A A schematic diagram illustrating the correspondence between attenuation sampling values and attenuation time provided according to some embodiments of the present invention is shown. Figure 5B A schematic diagram illustrating the relationship between decay time constant and temperature according to some embodiments of the present invention is shown.
[0045] like Figure 5A As shown, the temperature transmitter 26 can output a 4-20mA analog signal to the host computer 28 in real time based on the acquired fluorescence intensity. The host computer 28 can determine the real-time fluorescence intensity based on the amplitude of the acquired analog signal, and determine that the decay time constant has been reached when the real-time fluorescence intensity decays to a preset ratio. Afterwards, the host computer 28 can query the data based on the decay time constant. Figure 5B The decay time constant and temperature correspondence shown are used to determine the current temperature of probe point 13. Thus, this invention enables rapid and high-precision measurement and control of the temperature of the curved outer wall of a vapor deposition apparatus, while avoiding radio frequency interference coupling to probe 11, thereby achieving a temperature control accuracy of ±1.5℃ or even higher.
[0046] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.
[0047] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A temperature control system for a vapor deposition apparatus, characterized in that, include: At least four fiber optic probes are provided with temperature-sensing materials at their ends. Each fiber optic probe contacts at least four temperature zones on the arc-shaped outer wall of the vapor deposition equipment. The vapor deposition equipment includes an HDP-CVD device. Under the action of a light source, the temperature-sensing material emits fluorescence with a corresponding decay time constant according to the temperature it is in. An optical fiber, with its first end connected to the optical fiber probe and its second end connected to the processor; and The processor is configured to: provide a light source to the fiber optic probe via the fiber optic cable; acquire returned fluorescence from the fiber optic probe via the fiber optic cable; determine the temperature of each of the temperature zones of the arc-shaped outer wall based on the decay time constant of the fluorescence; determine the heating rate of each of the temperature zones based on the temperature of each of the temperature zones; and adjust the current temperature control strategy in response to any heating rate of any of the temperature zones exceeding a preset heating rate threshold, so that the heating rate falls back to the range of the heating rate threshold.
2. The temperature control system as described in claim 1, characterized in that, The processor is further configured to: Based on the temperature of each of the stated temperature zones, determine the temperature difference between the stated temperature zones; and In response to a temperature difference between any two temperature zones exceeding a preset temperature difference threshold, the current temperature control strategy is adjusted to bring the temperature difference back to within the range of the temperature difference threshold.
3. The temperature control system as described in claim 1 or 2, characterized in that, Also includes: A shielding cover, wherein the shielding cover surrounds the arc-shaped outer wall of the vapor deposition apparatus, and the processor is located outside the shielding cover to prevent radio frequency interference inside the vapor deposition apparatus.
4. The temperature control system as described in claim 1, characterized in that, Also includes: A probe guide seat is fixed to the vapor deposition equipment near the outer wall, and the first end of the optical fiber passes through the probe guide seat so that at least one optical fiber probe stably contacts at least one detection point on the outer wall of the vapor deposition equipment.
5. The temperature control system as described in claim 4, characterized in that, It also includes locking screws, preload springs, limit rings, and probe mounting bases, among which, The locking screw, the preload spring, and the limiting ring are sequentially fitted around the outer periphery of the optical fiber, and the limiting ring is clamped and fixed on the optical fiber at a preset installation position. The first end of the optical fiber passes sequentially through the probe mounting base and the probe guide base. After the optical fiber probe contacts the outer wall of the vapor deposition equipment, the locking screw is tightened and fixed on the probe mounting base, compressing the preload spring to generate elastic force. The preload spring transmits the elastic force to the first end of the optical fiber via the limiting ring, so that the optical fiber probe stably contacts the detection point on the outer wall of the vapor deposition equipment.
6. The temperature control system as described in claim 1, characterized in that, The processor includes a temperature transmitter and a host computer, wherein... The temperature transmitter is connected to the second end of the optical fiber and is configured to: provide a light source to the optical fiber probe via the optical fiber; acquire the returned fluorescence from the optical fiber probe via the optical fiber; and output a corresponding analog signal based on the decay time constant of the fluorescence. The host computer is connected to the output of the temperature transmitter and is configured to: acquire the analog signal from the temperature transmitter; and determine the corresponding temperature data based on the analog signal.
7. The temperature control system as described in claim 6, characterized in that, The processor also includes a filter, wherein, The filter is located between the temperature transmitter and the host computer to filter the analog signal output by the temperature transmitter and transmit the filtered analog signal to the host computer.
8. A temperature control method for a vapor deposition apparatus, characterized in that, Includes the following steps: A light source is provided to a fiber optic probe via an optical fiber of the temperature control system of the vapor deposition equipment as described in any one of claims 1 to 7, wherein the end of the fiber optic probe is provided with a temperature-sensing material, each fiber optic probe is in contact with at least four temperature zones of the arc-shaped outer wall of the vapor deposition equipment, the vapor deposition equipment includes an HDP-CVD equipment, and the temperature-sensing material emits fluorescence with a corresponding decay time constant according to the temperature under the action of the light source. The returned fluorescence is acquired from the fiber optic probe via the fiber optic cable; The temperature of each temperature zone of the arc-shaped outer wall is determined based on the decay time constant of the fluorescence; and Based on the temperature of each temperature zone, determine the heating rate of each temperature zone; and in response to the heating rate of any temperature zone being greater than a preset heating rate threshold, adjust the current temperature control strategy so that the heating rate falls back to the range of the heating rate threshold.
9. A computer-readable storage medium storing computer instructions thereon, characterized in that, When the computer instructions are executed by the processor, the temperature control method for the vapor deposition apparatus as described in claim 8 is implemented.
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