半导体结构
By designing the junction isolation structure in the semiconductor structure to have the opposite conductivity type to the drift region, and adjusting its spacing and width, the balance problem between high breakdown voltage and low specific on-resistance in laterally diffused metal-oxide-semiconductor devices is solved, thereby improving the reliability and performance of the devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI HUAHONG GRACE SEMICON MFG CORP
- Filing Date
- 2022-10-28
- Publication Date
- 2026-07-17
AI Technical Summary
Existing laterally diffused metal-oxide-semiconductor devices have shortcomings in terms of performance improvement, especially in balancing the requirements of high voltage withstand capability and low specific on-resistance.
A semiconductor structure is designed in which the second ion in the junction isolation structure has the opposite conductivity type to the first ion in the drift region. By adjusting the spacing and width of the junction isolation structure to gradually change along the direction from the source region to the drain region, a depletion region is formed, reducing the specific on-resistance of the drift region while maintaining the circuit conduction performance.
Without changing the length of the drift region, the specific on-resistance of the drift region is reduced, which enhances the reliability and withstand voltage of the device, avoids the risk of breakdown caused by excessive current density, and improves the overall performance of the device.
Smart Images
Figure CN115548124B_ABST