Electrostatic chuck apparatus

Abstract

An electrostatic chuck device includes an electrostatic chuck plate having a dielectric substrate with a wafer placement surface and a suction electrode inside the dielectric substrate, a metal base supporting the electrostatic chuck plate from a back surface side opposite the placement surface, and a focus ring disposed at an outer peripheral portion of the electrostatic chuck plate and surrounding the placement surface. The electrostatic chuck plate has a ring suction region that is suctioned by the focus ring on a surface on the same side as the placement surface, and has a base suction region that is suctioned by the metal base on a back surface on the opposite side from the placement surface.

Description

Technical Field

[0001] This invention relates to an electrostatic chuck device.

[0002] This application claims priority under Japanese Patent Application No. 2020-111804, filed in Japan on June 29, 2020, the contents of which are incorporated herein by reference. Background Technology

[0003] As an electrostatic chuck device for supporting semiconductor wafers, for example as described in Patent Document 1, there is a known structure in which an electrostatic chuck capable of adsorbing a focusing ring is provided on a metal wafer susceptor. A power supply device for plasma generation is connected to the wafer susceptor.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2012-134375 Summary of the Invention

[0007] The technical problem to be solved by the invention

[0008] As wafer processing temperatures in semiconductor manufacturing equipment increase, there is a growing demand for electrostatic chuck devices capable of handling high-temperature processes. Specifically, electrostatic chuck devices used in high-temperature wafer processing must be able to withstand the thermal stress caused by differences in the thermal expansion rates of various parts. However, in conventional electrostatic chuck devices, problems exist such as the bonding parts peeling off due to thermal stress.

[0009] The purpose of this invention is to provide a wafer support device with excellent reliability when used at high temperatures.

[0010] means for solving technical problems

[0011] According to a first aspect of the present invention, an electrostatic chuck device is provided, comprising: an electrostatic chuck plate having a dielectric substrate and an adsorption electrode located inside the dielectric substrate, the dielectric substrate having a mounting surface for mounting a wafer; a metal base supporting the electrostatic chuck plate from a back side opposite to the mounting surface; and a focusing ring disposed on the outer periphery of the electrostatic chuck plate and surrounding the mounting surface. The electrostatic chuck plate has a ring adsorption region for adsorption with the focusing ring on a side of the same side as the mounting surface, and a base adsorption region for adsorption with the metal base on a back side opposite to the mounting surface.

[0012] The electrostatic chuck device of the first aspect of the present invention preferably includes the features described below. It is also preferable to combine two or more of the following features as needed.

[0013] The structure can be configured as follows: either or both of the adsorption area of ​​the base plate of the electrostatic chuck and the surface of the metal base opposite to the adsorption area of ​​the base plate have multiple protrusions distributed along the plane direction of the electrostatic chuck.

[0014] The structure can be configured as follows: the distribution density of the plurality of protrusions is different in the regions of the abutment adsorption region that overlap with the mounting surface when viewed from above and in the regions that overlap with the annular adsorption region when viewed from above.

[0015] The structure can be configured as follows: the adsorption electrode has: a first electrode portion, a surface portion located on the mounting surface side of the dielectric substrate; a second electrode portion, a surface portion located on the metal base side of the dielectric substrate; and a connecting pin, which connects the first electrode portion and the second electrode portion inside the dielectric substrate.

[0016] The structure can be configured as follows: the adsorption electrode has a third electrode portion, which is located on the outer periphery of the first electrode portion and is located on the surface of the annular adsorption region.

[0017] The structure can be configured as follows: the electrostatic chuck plate has a height difference between the mounting surface and the ring adsorption area, and the surface of the ring adsorption area that faces the focusing ring is located closer to the metal base than the mounting surface.

[0018] The structure can be configured as follows: the electrostatic chuck plate has a base fixing part fixed to the metal base in the center of the back side when viewed from above, and the base adsorption area is arranged to surround the base fixing part.

[0019] Invention Effects

[0020] According to one aspect of the present invention, an electrostatic chuck device with excellent reliability for use at high temperatures is provided. Attached Figure Description

[0021] Figure 1 This is a schematic cross-sectional view showing a preferred example of a plasma processing apparatus equipped with an electrostatic chuck device according to an embodiment.

[0022] Figure 2 This is a rough top view of the electrostatic chuck plate.

[0023] Figure 3A This is a partial schematic cross-sectional view of the outer periphery of the modified electrostatic chuck plate 10.

[0024] Figure 3B This is a partial schematic cross-sectional view showing the state of loss of the focusing ring 5 in the electrostatic chuck plate 10 of the first embodiment.

[0025] Figure 4 This is a schematic cross-sectional view showing a preferred example of a plasma processing apparatus equipped with the electrostatic chuck device 201 of the second embodiment.

[0026] Figure 5 This is a schematic cross-sectional view showing a preferred example of a plasma processing apparatus equipped with the electrostatic chuck device 301 of the third embodiment. Detailed Implementation

[0027] Hereinafter, preferred embodiments of the electrostatic chuck device of the present invention will be described with reference to the accompanying drawings. Furthermore, in all the following drawings, the dimensions or ratios of the constituent elements are sometimes shown differently to facilitate clear reading. Without departing from the spirit of the present invention, omissions, additions, changes, substitutions, replacements, or other modifications may be made to the quantity, position, size, or components.

[0028] (First Embodiment)

[0029] Figure 1 This is a schematic cross-sectional view of a plasma processing apparatus equipped with the electrostatic chuck device of this embodiment. Figure 2 This is a top view of the electrostatic chuck plate.

[0030] The plasma processing apparatus 100 includes a vacuum container 101 and an electrostatic chuck device 1 fixed inside the vacuum container 101. The vacuum container 101 has a bottom wall 102, a cylindrical side wall 103 extending upward from the outer peripheral end of the bottom wall 102, and a top wall 104 fixed to the upper end of the side wall 103 and opposed to the bottom wall 102 in the vertical direction.

[0031] An electrostatic chuck device 1 is fixed to the bottom of the internal space of the vacuum container 101. The electrostatic chuck device 1 is fixed to the inner side of the bottom wall 102 (the upper surface shown in the figure). In this embodiment, the electrostatic chuck device 1 is arranged inside the vacuum container 101 with the mounting surface 2a of the wafer W facing upwards. The arrangement of the electrostatic chuck device 1 is an example, but other arrangements are also possible.

[0032] The bottom wall 102 of the vacuum container 101 has an opening 102a extending through the bottom wall 102 along its thickness direction and an exhaust port 102b. An electrostatic chuck device 1 closes the opening 102a from the inside (top side of the diagram) of the vacuum container 101. The exhaust port 102b is located to the side of the electrostatic chuck device 1. A vacuum pump (not shown) is connected to the exhaust port 102b.

[0033] The electrostatic chuck device 1 includes an electrostatic chuck plate 10 for adsorbing and supporting a wafer W and a metal base 11 for supporting the electrostatic chuck plate 10. A focusing ring 5 is arranged on the outer periphery of the upper surface of the electrostatic chuck plate 10, which surrounds the mounting surface 2a (wafer W) when viewed from above.

[0034] The electrostatic chuck plate 10 has a dielectric substrate 2 with a mounting surface 2a for mounting a wafer W and an adsorption electrode 6 located inside the dielectric substrate 2.

[0035] The dielectric substrate 2 is circular when viewed from above. The dielectric substrate 2 is composed of a composite sintered body that possesses mechanical strength and durability against corrosive gases and their plasmas. As the dielectric material constituting the dielectric substrate 2, ceramics that possess both mechanical strength and durability against corrosive gases and their plasmas are preferably used. For example, alumina (Al2O3) sintered bodies, aluminum nitride (AlN) sintered bodies, and alumina (Al2O3)-silicon carbide (SiC) composite sintered bodies are preferably used.

[0036] The upper surface of the dielectric substrate 2 is a mounting surface 2a on which the wafer W is mounted. A plurality of protrusions 21 are formed on the mounting surface 2a at predetermined intervals. Each of the protrusions 21 has a diameter smaller than the thickness of the wafer W. The plurality of protrusions 21 on the mounting surface 2a support the wafer W. The shape of the protrusions can be arbitrarily chosen; for example, a cylindrical shape can be used.

[0037] The electrostatic chuck plate 10 has a ring-shaped adsorption region 2d radially outside the mounting surface 2a of the dielectric substrate 2. In this embodiment, the upper surface of the ring-shaped adsorption region 2d is located lower than the mounting surface 2a in the vertical direction shown in the figure. A focusing ring 5 is disposed on the ring-shaped adsorption region 2d. Figure 1 As shown, the outer periphery of the focusing ring 5 disposed in the ring adsorption region 2d protrudes further radially outward than the dielectric substrate 2. The outer periphery of the focusing ring 5, protruding outward from the dielectric substrate 2, is disposed within the notch 4b of the side cover 4, which will be described later. The height position (vertical position) of the upper surface of the focusing ring 5 is approximately the same as the height position of the upper surface of the wafer W placed on the mounting surface 2a.

[0038] The focusing ring 5 is formed of a material having the same conductivity as the wafer W placed on the mounting surface 2a. Specifically, silicon, silicon carbide, quartz, alumina, etc., can be used as the constituent materials of the focusing ring 5. By configuring the focusing ring 5, the electrical environment for plasma at the periphery of the wafer W can be made approximately the same as that of the wafer W. As a result, differences or inhomogeneities in plasma processing are less likely to occur between the center and the periphery of the wafer W.

[0039] The adsorption electrode 6 is located inside the dielectric substrate 2. The adsorption electrode 6 has two first electrode portions 61 located on the surface portion of the dielectric substrate 2 on the mounting surface 2a side, two second electrode portions 62 located on the surface portion of the dielectric substrate 2 on the metal base 11 side, and a plurality of connecting pins 63 inside the dielectric substrate 2 connecting the first electrode portions 61 and the second electrode portions 62. Furthermore, the surface portion may refer to a location close to the surface, or it may not be exposed on the surface.

[0040] like Figure 2 As shown, the two first electrode portions 61 are semi-circular when viewed from above. The two first electrode portions 61 are arranged in the planar direction of the dielectric substrate 2. The two first electrode portions 61 are arranged with their straight edges facing each other, forming a bipolar electrode with an overall circular shape. The two first electrode portions 61 are disposed in the area that overlaps with the mounting surface 2a when viewed from above.

[0041] The two second electrode portions 62 are semi-circular when viewed from above. The two second electrode portions 62 are arranged in the planar direction of the dielectric substrate 2. The two second electrode portions 62 are arranged with their straight edges facing each other, forming a bipolar electrode with an overall circular shape. The planar area of ​​the second electrode portion 62 is larger than the planar area of ​​the first electrode portion 61. When viewed from above, the second electrode portion 62 extends radially outward from the first electrode portion 61. The two second electrode portions 62 are disposed in the region that overlaps with the mounting surface 2a and the annular adsorption region 2d when viewed from above.

[0042] A connecting pin 63 is located between a first electrode portion 61 and a second electrode portion 62 that are opposed to each other in the vertical direction. The upper end of the connecting pin 63 is connected to the lower surface of the first electrode portion 61. The lower end of the connecting pin 63 is connected to the upper surface of the second electrode portion 62. Figure 2 As shown, the electrostatic chuck plate 10 has 18 connecting pins 63. The number of connecting pins 63 is not particularly limited and can be appropriately configured according to the planar area of ​​the adsorption electrode 6. When high-frequency power is input to the adsorption electrode 6, the high-frequency current easily flows along the outer periphery of the electrode, so multiple connecting pins 63 can be configured only on the outer periphery of the adsorption electrode 6.

[0043] The electrostatic chuck plate 10 has vents 2e that penetrate the dielectric substrate 2 in the vertical direction. The first electrode portion 61 and the second electrode portion 62 have through holes at positions corresponding to the vents 2e, and neither the first electrode portion 61 nor the second electrode portion 62 is exposed on the inner wall surface of the vents 2e. The vents 2e can be provided in two or more locations.

[0044] The back surface 2b of the dielectric substrate 2 is vertically opposed to the upper surface of the metal base 11. In this embodiment, the electrostatic chuck 10 can be adsorbed onto the metal base 11 by applying current to the adsorption electrode 6. In this embodiment, the back surface 2b of the dielectric substrate 2 is substantially the entire base adsorption region 2f adsorbed onto the metal base 11. A plurality of protrusions 22 are formed on the back surface 2b of the dielectric substrate 2 at predetermined intervals. Each of the plurality of protrusions 22 has a diameter smaller than the thickness of the wafer W. The plurality of protrusions 22 on the back surface 2b form a narrow space between the metal base 11 and the dielectric substrate 2. The shape of the protrusions can be arbitrarily chosen, for example, it can be cylindrical, a polygonal prism including a triangular prism, a cuboid, a cube, etc.

[0045] The metal base 11 is a circular plate-shaped metal component when viewed from above. The metal base 11 is made of, for example, aluminum alloy. The metal base 11 supports the electrostatic chuck plate 10 from the back side 2b. The metal base 11 is supported from below on a cylindrical support member 3 extending downward from the outer periphery of the back side of the metal base 11. Cylindrical side covers 4 are arranged radially outside the electrostatic chuck plate 10, the metal base 11, and the support member 3, surrounding them.

[0046] The metal base 11 has heating elements 9 distributed throughout its interior. The heating elements 9 and the metal base 11 are insulated from each other. A heater (not shown) is connected to the heating elements 9 by a power supply. The heating elements 9 can be located outside the metal base 11. The heating elements 9 can also be located inside the electrostatic chuck plate 10. The heating elements 9 can also be located between the electrostatic chuck plate 10 and the metal base 11.

[0047] The metal base 11 has two power supply terminals 13a and 13b. For example... Figure 1 As shown, power supply terminal 13a is disposed within terminal mounting hole 11a of metal base 11. Power supply terminal 13b is disposed within terminal mounting hole 11b. Terminal mounting holes 11a and 11b are through holes that penetrate metal base 11 in the vertical direction.

[0048] Power supply terminal 13a has a cylindrical insulating tube 14 fixed to the upper end of the inner wall of terminal mounting hole 11a, a plunger 15 disposed inside the insulating tube 14 and capable of moving up and down, a helical spring 16 that applies an upward elastic force to the plunger 15, and a receiving plate 17 that closes the opening on the lower side of the insulating tube 14 and supports the helical spring 16 from the lower side. Power supply terminal 13b has the same structure as power supply terminal 13a.

[0049] The insulating tube 14 has a length approximately the same as the thickness of the metal base 11. The insulating tube 14 insulates the conductive parts of the power supply terminals 13a and 13b from the metal base 11. The insulating tube 14 is made of, for example, aluminum oxide.

[0050] The plunger 15 is a rod-shaped conductive terminal extending in the vertical direction. The plunger 15 is made of, for example, tungsten, stainless steel, nickel, etc. The plunger 15 has a circular flange extending in the horizontal direction.

[0051] The helical spring 16 has a metal spring body. The helical spring 16 may be made of, for example, stainless steel or an Inconel heat-resistant alloy. The plunger 15 is inserted into the upper end of the helical spring 16. The upper end of the helical spring 16 contacts the lower surface of the flange of the plunger 15.

[0052] The receiving plate 17 is a circular metal plate. The receiving plate 17 may be made of, for example, Kovar iron-nickel-cobalt alloy, tungsten, etc. The receiving plate 17 is fixed to the insulating tube 14. The helical spring 16 is clamped in the vertical direction by the flange of the plunger 15 and the receiving plate 17.

[0053] The upper ends of the plungers 15 of power supply terminals 13a and 13b protrude upwards from the upper surface of the metal base 11. If the electrostatic chuck plate 10 is placed on the upper surface of the metal base 11, the upper ends of the plungers 15 are pressed downwards by the back surface 2b of the electrostatic chuck plate 10. The contact state between the plungers 15 and the electrostatic chuck plate 10 is maintained by the upward pressing of the plungers 15 by the coil spring 16.

[0054] The electrostatic chuck plate 10 has electrode terminals 64 at the contact positions with the two plungers 15. The electrode terminals 64 extend downward from the lower surface of the two second electrode portions 62 and protrude from the back surface 2b of the dielectric substrate 2. Through the contact between the plungers 15 and the electrode terminals 64, the power supply terminal 13a is electrically connected to one of the second electrode portions 62, and the power supply terminal 13b is electrically connected to the other second electrode portion 62.

[0055] Power supply terminals 13a and 13b are connected to the power supply device 110 on the receiving plate 17. Therefore, the power supply device 110 and the second electrode part 62 (adsorption electrode 6) are electrically connected via power supply terminals 13a and 13b.

[0056] like Figure 1 As shown, the power supply device 110 includes a high-frequency power supply 111 for plasma excitation, a matching device 112, a DC power supply 113 for electrostatic adsorption, and multiple resistors 114 to 118.

[0057] A high-frequency power supply 111 for plasma excitation is electrically connected via a matching adapter 112 to a main power supply rod 8 extending downward from the lower surface of the metal base 11. The main power supply rod 8 is, for example, a metal rod-shaped component made of aluminum, copper, stainless steel, etc. The upper end of the main power supply rod 8 is fixed to the lower surface of the metal base 11. High-frequency power output from the high-frequency power supply 111 is supplied to the metal base 11 via the main power supply rod 8.

[0058] A DC power supply 113 for electrostatic adsorption is connected to a receiving plate 17 at power supply terminal 13a via a resistor 114. The DC power supply 113 is also connected to the receiving plate 17 at power supply terminal 13b via a resistor 115. The voltage of the DC power supply 113 is applied to the two second electrode portions 62 via power supply terminals 13a and 13b. The voltage of the DC power supply 113 is also applied to the first electrode portion 61, which is connected to the second electrode portion 62 via a connecting pin 63.

[0059] In this embodiment, the negative terminal of the DC power supply 113 is connected to the output terminal of the matching device 112 via resistor 116. Furthermore, the positive terminal of the DC power supply 113 is connected to the output terminal of the matching device 112 via resistor 117. Additionally, the output terminal of the matching device 112 is grounded via resistor 118. With this structure, positive and negative electrodes can be formed for the bipolar adsorption electrode 6 with a ground reference.

[0060] The metal base 11 has a through hole 11c extending vertically through the metal base 11. A gas supply pipe 18 is connected to an opening on the lower side of the through hole 11c. The end of the gas supply pipe 18 opposite to the through hole 11c is connected to a gas supply source (not shown). The gas supply pipe 18 is, for example, a pipe made of an insulating material such as alumina.

[0061] The upper opening of the through-hole 11c opens into the space between the dielectric substrate 2 and the metal substrate 11. In this embodiment, the through-hole 11c is positioned to overlap with the vent 2e of the dielectric substrate 2 when viewed from above. When viewed from above, the positions of the through-hole 11c and the vent 2e can be offset from each other. The space inside the through-hole 11c is connected to the space between the dielectric substrate 2 and the metal substrate 11, and further connected to the space between the mounting surface 2a and the wafer W via the vent 2e. Cooling gas supplied from the gas supply source through the gas supply pipe 18 is supplied to the spaces between the upper and lower surfaces of the dielectric substrate 2 through the through-hole 11c and the vent 2e.

[0062] The support member 3 is a cylindrical component extending from the outer periphery of the lower surface of the metal base 11 toward the bottom wall 102. The support member 3 is made of an insulating material such as alumina. The lower end of the support member 3 is fixed to the upper surface of the bottom wall 102. The support member 3 is positioned along the periphery of the opening 102a of the bottom wall 102. The support member 3 and the bottom wall 102 are hermetically sealed, for example, by an O-ring or similar material.

[0063] The space inside the support member 3 is connected to the space outside the vacuum container 101 via the opening 102a of the bottom wall 102. The back surface 2b of the dielectric substrate 2 is exposed in the space inside the support member 3. Operators can access the back surface 2b of the dielectric substrate 2 through the opening 102a of the bottom wall 102.

[0064] The side cover 4 is a cylindrical component extending vertically. The side cover 4 covers the outer side of the support member 3. In this embodiment, the side cover 4 is radially opposed to the side end face 2c of the dielectric substrate 2 and the outer peripheral surface 3b of the support member 3. The side cover 4 protects the side end face 2c of the dielectric substrate 2 and the outer peripheral surface 3b of the support member 3 from the effects of plasma. The side cover 4 is made of, for example, alumina or quartz. The material of the side cover 4 is not particularly limited as long as it is a material with the required plasma resistance. The electrostatic chuck device 1 may also be configured without the side cover 4.

[0065] The upper end portion 4a of the side cover 4 is located to the side of the dielectric substrate 2. The side cover 4 has a notch 4b extending along the inner periphery at the corner of the inner peripheral side of the upper end portion 4a. The outer periphery of the focusing ring 5 is disposed inside the notch 4b. The height position (vertical position shown in the figure) of the upper end face 4c of the side cover 4 is approximately the same as the height position of the upper surface of the focusing ring 5 and the height position of the upper surface of the wafer W.

[0066] The electrostatic chuck device 1, equipped with the above structure, generates electrostatic force between the wafer W, the focusing ring 5, the metal substrate 11, and the adsorption electrode 6 by applying a DC voltage from the DC power supply 113 of the power supply device 110 to the bipolar adsorption electrode 6. As a result, the wafer W is adsorbed onto the mounting surface 2a of the electrostatic chuck plate 10, and the focusing ring 5 is adsorbed into the ring adsorption region 2d. Furthermore, the back surface 2b of the electrostatic chuck plate 10 is adsorbed onto the upper surface of the metal substrate 11.

[0067] That is, the electrostatic chuck plate 10 of this embodiment is a double-sided electrostatic chuck plate that adsorbs onto both the wafer W and the metal substrate 11. Moreover, the electrostatic chuck plate 10 has a ring adsorption region 2d on the side same as the mounting surface 2a for adsorbing onto the focusing ring 5, and a substrate adsorption region 2f on the back side 2b opposite to the mounting surface 2a for adsorbing onto the metal substrate 11.

[0068] According to this structure, by setting it to a state where no voltage is applied to the adsorption electrode 6, the electrostatic chuck plate 10 can be maintained in a state where it can move relative to the metal substrate 11. Therefore, in this embodiment, during plasma processing of the wafer W, the electrostatic chuck plate 10 can be kept in a state where it is not adsorbed onto the metal substrate 11 until the wafer W reaches the processing temperature, and after the wafer W reaches the processing temperature, the electrostatic chuck plate 10 can be put into an adsorbed state to perform plasma processing.

[0069] According to the plasma processing method described above, even if the electrostatic chuck plate 10 and the metal base 11 expand as the temperature rises, stress will not be applied to the contact portion between the electrostatic chuck plate 10 and the metal base 11 because the electrostatic chuck plate 10 can move on the metal base 11. Therefore, according to this embodiment, excellent reliability can be obtained in the high-temperature processing of the wafer W.

[0070] Furthermore, in this embodiment, since the focusing ring 5 is mounted on the electrostatic chuck plate 10, in the non-adsorption state, the focusing ring 5 moves together with the electrostatic chuck plate 10 relative to the metal substrate 11. Therefore, even if the electrostatic chuck plate 10 moves relative to the metal substrate 11, the positional relationship between the focusing ring 5 and the wafer W changes minimally. By positioning the wafer W and the focusing ring 5 appropriately, plasma inhomogeneity at the outer periphery of the wafer W can be suppressed.

[0071] In this embodiment, the electrostatic chuck plate 10 has a height difference between the mounting surface 2a and the ring adsorption region 2d. The surface of the ring adsorption region 2d that faces the focusing ring 5 is located closer to the metal substrate 11 than the mounting surface 2a. According to this structure, when a focusing ring 5 thicker than the wafer W is used, the height difference between the upper surface of the wafer W and the upper surface of the focusing ring 5 is easily eliminated, and plasma inhomogeneity at the outer periphery of the wafer W can be suppressed. Furthermore, due to the aforementioned height difference, the focusing ring 5 is difficult to move in the planar direction. Even when the electrostatic chuck plate 10 moves relative to the metal substrate 11, it is easy to maintain an appropriate positional relationship between the focusing ring 5 and the wafer W. In addition, since the focusing ring 5 can be held using the height difference of the electrostatic chuck plate 10, the electrostatic chuck plate 10 can also be configured to not have an adsorption electrode 6 in the ring adsorption region 2d.

[0072] In this embodiment, the adsorption electrode 6 has a first electrode portion 61 located on the surface portion of the dielectric substrate 2 on the mounting surface 2a side, a second electrode portion 62 located on the surface portion of the dielectric substrate 2 on the metal base 11 side, and a connecting pin 63 inside the dielectric substrate 2 connecting the first electrode portion 61 and the second electrode portion 62.

[0073] According to this structure, the first electrode portion 61 can be disposed near the mounting surface 2a and the second electrode portion 62 can be disposed near the back surface 2b, thereby improving the adhesion to the wafer W and the metal substrate 11.

[0074] On the other hand, if the adsorption electrode 6 is configured as a double-layer structure, the dielectric substrate 2 becomes thicker and the capacity of the electrostatic chuck plate 10 becomes smaller, resulting in difficulty in generating plasma. In this embodiment, the first electrode portion 61 and the second electrode portion 62 are electrically connected by a connecting pin 63, so the portion of the dielectric substrate 2 located between the first electrode portion 61 and the second electrode portion 62 does not affect the capacity. Therefore, the electrostatic chuck plate 10 according to this embodiment can achieve the same capacity as when the adsorption electrode 6 is a single-layer structure, and plasma can be easily generated.

[0075] The electrostatic chuck device 1 of this embodiment has a plurality of protrusions 22 distributed in the planar direction of the electrostatic chuck plate 10 in the adsorption region 2f of the base of the electrostatic chuck plate 10. According to this structure, cooling gas can also flow on the back surface 2b of the electrostatic chuck plate 10, thereby improving the heat uniformity of the electrostatic chuck plate 10.

[0076] In this embodiment, the electrostatic chuck plate 10 is configured to have a protrusion 22, but it can also have a protrusion on the upper surface of the metal base 11 (the surface opposite to the base adsorption region 2f) that is the same as the protrusion 22. In this case, cooling gas can also flow between the electrostatic chuck plate 10 and the metal base 11, which can improve the heat uniformity of the electrostatic chuck plate 10 and the wafer W.

[0077] In this embodiment, the electrostatic chuck plate 10 is designed to be freely adsorbed and detached from the metal base 11, but it can also be designed so that a portion of the back surface 2b of the electrostatic chuck plate 10 is fixed to the metal base 11. For example, the electrostatic chuck plate 10 may have a base fixing portion fixed to the upper surface of the metal base 11 at the central portion of the back surface 2b when viewed from above. As a fixing method, adhesive bonding, screw clips, etc., can be used. The base fixing portion can be located at a portion of the back surface 2b other than the central portion, and can be provided at multiple portions of the back surface 2b.

[0078] Furthermore, a fitting structure can be provided between the electrostatic chuck plate 10 and the metal base 11 to prevent positional displacement. For example, it can be configured such that the electrostatic chuck plate 10 has a recessed portion extending upward from the back surface 2b, and the metal base 11 has a protrusion that fits into the recessed portion. In the fitting structure, the sides of the recessed portion and the protrusion can be respectively designed as conical surfaces. According to this structure, when the electrostatic chuck plate 10 is placed on the metal base 11, the electrostatic chuck plate 10 is easily guided to a predetermined position, and positional displacement from the metal base 11 is less likely to occur.

[0079] Furthermore, in the interlocking structure, the concave portion of the electrostatic chuck plate 10 can be bonded to the convex portion of the metal base 11 to serve as the base fixing portion.

[0080] In the fitting structure, the positions of the recess and the convex part can be interchanged. That is, it can be configured such that the upper surface of the metal base 11 has a recess that is recessed to the downward side, and the electrostatic chuck plate 10 has a convex part that fits into the recess of the metal base 11.

[0081] In the case of the structure having the aforementioned base fixing portion, the area of ​​the back surface 2b of the electrostatic chuck plate 10, excluding the fixing portion, is a base adsorption region capable of adsorbing onto the metal base 11. Even with this structure, when heating the wafer W, by making the electrostatic chuck plate 10 non-adsorbed, at least the base adsorption region of the back surface 2b can move relative to the metal base 11, thus reducing the stress acting between the electrostatic chuck plate 10 and the metal base 11. When the base fixing portion is located at the center of the back surface 2b, the base adsorption region surrounds the base fixing portion, thus easily achieving the aforementioned stress reduction effect.

[0082] Furthermore, in this embodiment, the case where the electrode of the adsorption focusing ring 5 is the second electrode portion 62 has been described, but other structures may also be used. For example, the adsorption electrode 6 may be a structure having a third electrode portion located at a position further outward than the first electrode portion 61 and located in the surface portion of the ring adsorption region 2d. The third electrode portion may also be a structure electrically connected to at least one of the first electrode portion 61 and the second electrode portion 62, or it may be a structure connected to a power supply of a different system than the first electrode portion 61 and the second electrode portion 62.

[0083] According to this structure, the third electrode portion can be positioned closer to the surface portion of the annular adsorption region 2d than the second electrode portion 62, thus improving the adsorption force on the focusing ring 5. Alternatively, the first electrode portion 61 can be extended to the annular adsorption region 2d to form the third electrode portion. In this case, the first electrode portion 61 is bent along the height difference between the mounting surface 2a and the annular adsorption region 2d.

[0084] (Modified Example)

[0085] refer to Figure 3A and Figure 3B A variation of the first embodiment will be described.

[0086] Figure 3A This is a partial cross-sectional view of the outer periphery of the modified electrostatic chuck plate 10. Figure 3B This is a partial cross-sectional view showing the state of loss of the focusing ring 5 in the electrostatic chuck plate 10 of the first embodiment.

[0087] like Figure 3BAs shown, when the focusing ring 5 is worn down and becomes thinner, its capacity increases relatively, thus increasing the electron density of the plasma P on the focusing ring 5 relative to the wafer W. Compared to the case where the focusing ring 5 is unworn, the plasma distribution becomes uneven, and uneven processing is more likely to occur at the outer periphery of the wafer W.

[0088] Therefore, when the focusing ring 5 is worn out, it can be replaced with... Figure 3A The electrostatic chuck plate 10 in the modified example shown can easily maintain the distribution of plasma.

[0089] exist Figure 3A In the case of the structure shown, in the modified electrostatic chuck plate 10, the protrusion 22A provided on the back surface 2b of the region overlapping with the ring adsorption region 2d has a larger diameter than the protrusion 22 provided in the region overlapping with the mounting surface 2a. According to this structure, the dielectric ratio in the ring adsorption region 2d of the electrostatic chuck plate 10 can be increased, thus reducing the overall capacity variation even when using a lossy focusing ring 5. This, in the case of the structure, can suppress the generation of inhomogeneities in the plasma.

[0090] The protrusion 22A in the region overlapping with the ring adsorption region 2d can also be a component of the ring adsorption region. Figure 3A The structure other than the large-diameter protrusions shown. For example, it can be configured such that the arrangement density of protrusions 22A is greater than the arrangement density of protrusions 22. More specifically, regarding the protrusions 22A in the region overlapping with the annular adsorption region 2d, it can be configured such that their diameter is the same as the diameter of the protrusions 22 in the region overlapping with the mounting surface 2a, while on the other hand, the arrangement density of protrusions 22A is greater than the arrangement density of protrusions 22.

[0091] Furthermore, depending on the structure of the focusing ring 5, the diameter of the protrusion 22A in the region overlapping with the ring adsorption region 2d can be smaller than the diameter of the protrusion 22 in the region overlapping with the mounting surface 2a. Alternatively, the arrangement density of the protrusions 22A in the region overlapping with the ring adsorption region 2d can be smaller than the arrangement density of the protrusions 22 in the region overlapping with the mounting surface 2a. By adopting this structure, a focusing ring 5 with a large thickness can be used.

[0092] In the modified electrostatic chuck plate 10 described above, the distribution density of the plurality of protrusions 22 differs between the region in the base adsorption region 2f that overlaps with the mounting surface 2a when viewed from above and the region in the base adsorption region 2f that overlaps with the ring adsorption region 2d when viewed from above.

[0093] According to this structure, by varying the electrostatic chuck plate 10 according to the thickness of the focusing ring 5, it is possible to suppress uneven plasma distribution on the outer periphery of the wafer W. This reduces processing unevenness on the outer periphery of the wafer W.

[0094] In addition, in a modified example, the electrostatic chuck plate 10 is designed to have protrusions 22 and 22A, but it is also possible to have the same protrusions as protrusions 22 and 22A on the upper surface of the metal base 11 (the surface opposite to the base adsorption region 2f).

[0095] (Second Implementation)

[0096] Figure 4 This is a cross-sectional view of a plasma processing apparatus equipped with the electrostatic chuck device 201 of the second embodiment. Figure 4 In the middle, it is marked with Figure 1 The components of the same symbols as those in Figure 3 are the same as those of the electrostatic chuck device 1 in the first embodiment.

[0097] The electrostatic chuck device 201 of the second embodiment includes an electrostatic chuck plate 210 having a unipolar adsorption electrode 206, a focusing ring 5 disposed on the outer periphery of the electrostatic chuck plate 210, a metal base 11 supporting the electrostatic chuck plate 210 from the lower side, a support member 3 supporting the metal base 11, and a side cover 4 located radially outward of the support member 3.

[0098] The adsorption electrode 206 has a first electrode portion 261 located on the surface portion of the dielectric substrate 2 on the mounting surface 2a side, a second electrode portion 262 located on the surface portion of the dielectric substrate 2 on the metal base 11 side, and a plurality of connecting pins 263 inside the dielectric substrate 2 that connect the first electrode portion 261 and the second electrode portion 262.

[0099] In this embodiment, both the first electrode portion 261 and the second electrode portion 262 are circular when viewed from above. The diameter of the second electrode portion 262 is larger than the diameter of the first electrode portion 261. The first electrode portion 261 is disposed in the region that overlaps with the mounting surface 2a of the dielectric substrate 2 when viewed from above. The second electrode portion 262 extends radially outward beyond the outer peripheral end of the first electrode portion 261. The outer peripheral portion of the second electrode portion 262 overlaps with the annular adsorption region 2d when viewed from above.

[0100] Connecting pins 263 are disposed at multiple locations within the area where the first electrode portion 261 and the second electrode portion 262 overlap when viewed from above. The number and arrangement of connecting pins 263 are related to... Figure 2 The connecting pin 63 shown in the first embodiment is the same. The number and arrangement of the connecting pins 263 can also be appropriately changed according to the planar area of ​​the adsorption electrode 206, the type (DC or AC) of the current flowing through the adsorption electrode 206, and its size.

[0101] The electrostatic chuck plate 210 has an electrode terminal 264 extending downward from the lower surface of the second electrode portion 262. The lower end of the electrode terminal 264 is exposed on the back surface 2b of the dielectric substrate 2. In this embodiment, the adsorption electrode 206 is unipolar, so only the power supply terminal 13a of the metal base 11 is connected to the adsorption electrode 206. The upper end of the plunger 15 of the power supply terminal 13a contacts the electrode terminal 264 of the electrostatic chuck plate 210. The DC power supply 113 for electrostatic adsorption is connected to the power supply terminal 13a via a resistor 114. In this embodiment, the adsorption electrode 206 is connected to the positive terminal of the DC power supply 113.

[0102] The electrostatic chuck plate 210 has a plurality of through holes 23 penetrating the dielectric substrate 2 in the annular adsorption region 2d and a groove 24 opening on the upper surface of the annular adsorption region 2d. The groove 24 is annular in shape extending along the annular adsorption region 2d when viewed from above. The width of the groove 24 is smaller than the width of the focusing ring 5. The opening on the upper side of the groove 24 is closed by the focusing ring 5 adsorbed in the annular adsorption region 2d.

[0103] Through-hole 23 opens on the bottom surface of groove 24 and the back surface 2b of dielectric substrate 2. Therefore, groove 24 is connected to the gap 25 between the metal substrate 11 and the back surface 2b of dielectric substrate 2 via through-hole 23. Cooling gas supplied to the gap 25 via gas supply pipe 18 and through-hole 11c of metal substrate 11 flows into groove 24 through through-hole 23. The structure with groove 24 facilitates cooling of focusing ring 5.

[0104] The power supply unit 220 is connected to the main power supply rod 8, which extends downward from the lower surface of the metal base 11. The power supply unit 220 includes a high-frequency power supply 111 for plasma excitation, a matching converter 112, a DC power supply 121 for applying bias voltage, and a resistor 122. The high-frequency power supply 111 is connected to the main power supply rod 8 via the matching converter 112. The DC power supply 121 is connected to the main power supply rod 8 via the resistor 122.

[0105] In the electrostatic chuck device 201 of the second embodiment having the above structure, by applying a voltage from the DC power supply 113 to the adsorption electrode 206, the wafer W can be adsorbed onto the mounting surface 2a of the electrostatic chuck plate 210, and the back surface 2b of the electrostatic chuck plate 210 can be adsorbed onto the upper surface of the metal base 11.

[0106] In the electrostatic chuck device 201 of the second embodiment, by providing a double-sided adsorption type electrostatic chuck plate 210, the electrostatic chuck plate 210 can be made into a non-adsorption state and moved on the metal base 11 when the wafer W is heated. Therefore, similar to the first embodiment, damage to the electrostatic chuck device 201 caused by thermal stress can be prevented. Thus, according to the electrostatic chuck device 201 of the second embodiment, high-temperature processing of the wafer W can be performed.

[0107] The electrostatic chuck plate 210 of the second embodiment has a double-layered adsorption electrode 206. Since the first electrode portion 261 and the second electrode portion 262 are respectively disposed near the adsorption target, a high adsorption force can be obtained.

[0108] In this embodiment, the first electrode portion 261 and the second electrode portion 262 are also connected via a connecting pin 263, so even when using a relatively thick dielectric substrate 2, the actual capacity of the electrostatic chuck plate 210 does not increase. Therefore, in the electrostatic chuck device 201 of this embodiment, plasma can be easily excited by power input from the high-frequency power supply 111 to the metal base 11.

[0109] Furthermore, the electrostatic chuck device 201 of the second embodiment can be appropriately combined with the structures of the first embodiment, the modified examples and the third embodiment described in this specification within a range that does not cause contradictions.

[0110] (Third Implementation)

[0111] Figure 5 This is a cross-sectional view of a plasma processing apparatus equipped with the electrostatic chuck device 301 of the third embodiment. Figure 5 In the middle, it is marked with Figures 1 to 4 The same symbols have the same constituent elements as the electrostatic chuck device 1 of the first embodiment or the electrostatic chuck device 201 of the second embodiment.

[0112] The electrostatic chuck device 301 of the third embodiment includes an electrostatic chuck plate 310 having a unipolar adsorption electrode 306, a focusing ring 5 disposed on the outer periphery of the electrostatic chuck plate 310, a metal base 11 supporting the electrostatic chuck plate 310 from the lower side, a support member 3 supporting the metal base 11, and a side cover 4 located radially outward of the support member 3.

[0113] The adsorption electrode 306 has a first electrode portion 361 located on the surface portion of the dielectric substrate 2 on the mounting surface 2a side and a second electrode portion 362 located on the surface portion of the dielectric substrate 2 on the metal base 11 side. In this embodiment, both the first electrode portion 361 and the second electrode portion 362 are circular in plan view. The diameter of the second electrode portion 362 is larger than the diameter of the first electrode portion 361. The first electrode portion 361 is disposed in the region that overlaps with the mounting surface 2a of the dielectric substrate 2 in plan view. The second electrode portion 362 extends radially outward beyond the outer peripheral end of the first electrode portion 361. The outer peripheral portion of the second electrode portion 362 overlaps with the annular adsorption region 2d in plan view.

[0114] The electrostatic chuck plate 310 has an electrode terminal 364a extending downward from the lower surface of the first electrode portion 361 and an electrode terminal 364b extending downward from the lower surface of the second electrode portion 362. The lower ends of the electrode terminals 364a and 364b are exposed on the back surface 2b of the dielectric substrate 2. The electrode terminal 364a contacts the plunger 15 of the power supply terminal 13a protruding from the upper surface of the metal base 11. The electrode terminal 364b contacts the plunger 15 of the power supply terminal 13b protruding from the upper surface of the metal base 11.

[0115] The DC power supply 123 for electrostatic adsorption is connected to the power supply terminal 13a via a resistor 124. In this embodiment, the power supply terminal 13a is electrically connected to the positive terminal of the DC power supply 123.

[0116] The DC power supply 125 for electrostatic adsorption is connected to the power supply terminal 13b via a resistor 126. In this embodiment, the power supply terminal 13b is electrically connected to the positive terminal of the DC power supply 125.

[0117] The power supply unit 320 is connected to the main power supply rod 8, which extends downward from the lower surface of the metal base 11. The power supply unit 320 includes a high-frequency power supply 111 for plasma excitation, a matching converter 112, a DC power supply 121 for applying bias voltage, and a resistor 122. The high-frequency power supply 111 is connected to the main power supply rod 8 via the matching converter 112. The DC power supply 121 is connected to the main power supply rod 8 via the resistor 122.

[0118] In the electrostatic chuck device 301 of the third embodiment having the above structure, by applying a voltage from the DC power supply 123 to the first electrode 361, the wafer W can be adsorbed onto the mounting surface 2a of the electrostatic chuck plate 310. Furthermore, by applying a voltage from the DC power supply 125 to the second electrode 362, the back surface 2b of the electrostatic chuck plate 310 can be adsorbed onto the upper surface of the metal base 11.

[0119] In the electrostatic chuck device 301 of the third embodiment, by providing a double-sided adsorption type electrostatic chuck plate 310, the electrostatic chuck plate 310 can be made into a non-adsorption state and moved on the metal base 11 when the wafer W is heated. Therefore, similar to the first embodiment, damage to the electrostatic chuck device 301 caused by thermal stress can be prevented. Thus, according to the electrostatic chuck device 301 of the third embodiment, high-temperature processing of the wafer W can be performed.

[0120] The electrostatic chuck plate 310 of the third embodiment has a double-layered adsorption electrode 306. Since the first electrode portion 361 and the second electrode portion 362 are respectively disposed near the adsorption target, a high adsorption force can be obtained.

[0121] In this embodiment, the first electrode portion 361 and the second electrode portion 362 are connected to different DC power supplies 123 and 125. With this structure, the potential of the first electrode portion 361 of the adsorption wafer W and the potential of the second electrode portion 362 of the adsorption metal substrate 11 and focusing ring 5 can be easily adjusted to appropriate potentials. Poor adsorption or heating is less likely to occur, thus improving the yield of plasma processing.

[0122] Furthermore, the electrostatic chuck device 301 of the third embodiment can be appropriately combined with the structures of the first embodiment, the modified examples and the second embodiment described in this specification within a range that does not cause contradictions.

[0123] Industrial availability

[0124] This invention provides a wafer support device or electrostatic chuck device with excellent reliability for high-temperature use. This invention also provides an electrostatic chuck plate capable of double-sided clamping.

[0125] Label Explanation

[0126] 1, 201, 301 - Electrostatic chuck device

[0127] 2-Dielectric substrate

[0128] 2a-Placement surface

[0129] 2b - Back

[0130] 2c-side end face

[0131] 2d-ring adsorption region

[0132] 2e-pores

[0133] 2f-sac adsorption region

[0134] 3-Cylindrical support component

[0135] 3b-Outer Peripheral Surface

[0136] 4-Side Cover

[0137] 4a-Upper end

[0138] 4b-Notch

[0139] 4c - Upper end face

[0140] 5-Focusing Ring

[0141] 6, 206, 306 - Adsorption Electrodes

[0142] 8-Main power supply rod

[0143] 9-Heating element

[0144] 10, 210, 310 - Electrostatic chuck plates

[0145] 11-Metal abutment

[0146] 11a, 11b - Terminal mounting holes

[0147] 11c - Through Hole

[0148] 13a, 13b - Power supply terminals

[0149] 14-Insulating Tube

[0150] 15-Plug

[0151] 16-coil spring

[0152] 17-Receiver Board

[0153] 18-Gas supply pipe

[0154] 21, 22, 22A - Protrusions

[0155] 23-Through Hole

[0156] 24-slot

[0157] 25-gap

[0158] 61, 261, 361 - First Electrode Section

[0159] 62, 262, 362 - Second Electrode Section

[0160] 63, 263 - Connecting pin

[0161] 64, 264, 364, 364a, 364b - Electrode terminals

[0162] 100-Plasma Processing Device

[0163] 101-Vacuum Container

[0164] 102-Bottom wall

[0165] 102a - Opening

[0166] 102b - Exhaust Port

[0167] 103-Cylindrical sidewalls

[0168] 104-Top Wall

[0169] 110-Power Supply Unit

[0170] 111-High Frequency Power Supply

[0171] 112-Matcher

[0172] 113-DC Power Supply

[0173] 114, 115, 116, 117, 118, 122, 124, 126 - Resistors

[0174] 121, 123, 125 - DC Power Supply

[0175] 210-Electrostatic Chuck Plate

[0176] 220-Power Supply Unit

[0177] P-plasma

[0178] W-chip

Claims

1. An electrostatic chuck device, comprising: An electrostatic chuck plate has a dielectric substrate and an adsorption electrode located inside the dielectric substrate, the dielectric substrate having a mounting surface for placing a wafer; A metal base supports the electrostatic chuck plate from the back side opposite to the mounting surface; and A focusing ring is disposed on the outer periphery of the electrostatic chuck plate and surrounds the mounting surface, wherein... The electrostatic chuck plate has a ring adsorption region on the side of the same surface as the mounting surface, which is adsorbed by the focusing ring, and a base adsorption region on the back side, which is adsorbed by the metal base, on the side opposite to the mounting surface. The electrostatic chuck plate has a plurality of protrusions distributed along the plane of the electrostatic chuck plate on either or both of the adsorption area of ​​the base and the surface of the metal base opposite to the adsorption area of ​​the base. The distribution density of the plurality of protrusions differs from that of the regions in the abutment adsorption region that overlap with the mounting surface when viewed from above and the regions in the abutment adsorption region that overlap with the ring adsorption region when viewed from above.

2. The electrostatic chuck device according to claim 1, wherein, The adsorption electrode has the following characteristics: The first electrode portion is a surface portion located on the mounting surface side of the dielectric substrate; The second electrode portion is located on the surface layer of the dielectric substrate on the side of the metal base plate. and A connecting pin connects the first electrode portion and the second electrode portion inside the dielectric substrate.

3. The electrostatic chuck device according to claim 2, wherein, The adsorption electrode has a third electrode portion, which is located on the outer periphery of the first electrode portion and is located on the surface of the annular adsorption region.

4. The electrostatic chuck device according to any one of claims 1 to 3, wherein, The electrostatic chuck plate has a height difference between the mounting surface and the ring adsorption area, and the surface of the ring adsorption area opposite to the focusing ring is located closer to the metal base than the mounting surface.

5. The electrostatic chuck device according to any one of claims 1 to 3, wherein, The electrostatic chuck plate has a base fixing part fixed to the metal base at the center of its back side when viewed from above. The abutment adsorption region is configured to surround the abutment fixation portion.

6. The electrostatic chuck device according to claim 1, wherein, The electrostatic chuck plate is a double-sided adsorption type electrostatic chuck plate.

7. The electrostatic chuck device according to claim 1, wherein, The electrostatic chuck plate has multiple protrusions distributed along the plane of the electrostatic chuck plate on both the base adsorption area and the metal base opposite to the base adsorption area.

8. The electrostatic chuck device according to claim 1, wherein, The diameter of the protrusion in the region of the abutment adsorption region that overlaps with the annular adsorption region when viewed from above is larger than the diameter of the protrusion in the region that overlaps with the mounting surface when viewed from above.

9. The electrostatic chuck device according to claim 1, wherein, The density of protrusions in the region of the abutment adsorption region that overlaps with the annular adsorption region when viewed from above is greater than the density of protrusions in the region that overlaps with the mounting surface when viewed from above.

10. The electrostatic chuck device according to claim 1, wherein, The diameter of the protrusion in the region of the abutment adsorption area that overlaps with the annular adsorption area when viewed from above is smaller than the diameter of the protrusion in the region that overlaps with the mounting surface when viewed from above.

11. The electrostatic chuck device according to claim 1, wherein, The density of protrusions in the region of the abutment adsorption region that overlaps with the annular adsorption region when viewed from above is less than the density of protrusions in the region of the abutment adsorption region that overlaps with the mounting surface when viewed from above.

12. The electrostatic chuck device according to claim 2, wherein, The first electrode portion is a bipolar electrode consisting of two semi-circular pieces that appear as a top view and are circular overall. The second electrode portion is a bipolar electrode consisting of two semi-circular pieces that appear as a top view and are circular overall. The planar area of ​​the second electrode portion is larger than the planar area of ​​the first electrode portion. When viewed from above, the first electrode overlaps with the mounting surface. When viewed from above, the second electrode overlaps with the mounting surface and the annular adsorption region.

13. The electrostatic chuck device according to claim 2, wherein, The first electrode portion is a circular electrode. The second electrode portion is a circular electrode. The planar area of ​​the second electrode portion is larger than the planar area of ​​the first electrode portion. When viewed from above, the first electrode overlaps with the mounting surface. When viewed from above, the second electrode overlaps with the mounting surface and the annular adsorption region.

14. The electrostatic chuck device according to claim 2, wherein, The electrostatic chuck plate has electrode terminals extending downward from the lower surfaces of the first electrode portion and the second electrode portion, respectively. The metal base has a power supply terminal for supplying power to the first electrode portion via the electrode terminal and a power supply terminal for supplying power to the second electrode portion via the electrode terminal. The power supply terminal has a cylindrical insulating tube, a plunger that can move up and down inside the insulating tube, a helical spring that applies an upward elastic force to the plunger, and a receiving plate that closes the opening on the lower side of the insulating tube and supports the helical spring from the lower side.

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