A testing system and testing method for a semiconductor laser

Abstract

The application relates to the field of semiconductor laser chips, and discloses a testing system and a testing method for a semiconductor laser. The testing system comprises a semiconductor laser chip, a first integrating sphere, a polarization beam splitter and a second integrating sphere. A first light beam generated by the semiconductor laser chip is used to test the optical power of the light beam in the first integrating sphere. A second light beam passes through the through hole of the first integrating sphere, reaches the second integrating sphere through the polarization beam splitter, and is used to test the polarization degree of the second light beam in the second integrating sphere. The testing system can simultaneously test the optical power and the polarization degree of the semiconductor laser chip, shortens the testing time, improves the testing efficiency, and enhances the user experience.

Description

Technical Field

[0001] This application relates to the field of semiconductor laser chips, and in particular to a test system and test method for semiconductor lasers. Background Technology

[0002] With the widespread application of semiconductor lasers in fields such as pump lasers, plastic welding, medical applications, marking, night vision, and guidance, the requirements for beam quality, power density, and brightness of semiconductor lasers are becoming increasingly stringent. Currently, to improve the power of fiber-coupled modules for semiconductor lasers, the industry is simultaneously increasing the power of individual COS (Coalescing System) units and employing more advanced packaging technologies to integrate more COS units into a single tube with minimal increase in tube size. One mainstream packaging technology is polarization beam combining, which combines multiple single-tube lasers to achieve higher power and brightness output. This requires screening individual lasers based on their power, wavelength, and polarization degree, selecting COS units with high power and polarization degree for use. However, currently, there is no way to simultaneously test the two crucial indicators of semiconductor laser power and polarization degree, resulting in low testing efficiency and long testing times. Summary of the Invention

[0003] This application provides a testing system for semiconductor lasers to solve the problem in existing technologies that cannot simultaneously measure both optical power and polarization degree of semiconductor lasers. The testing system of this application includes:

[0004] A first integrating sphere, the center of which is located on the optical axis of the first beam generated by the semiconductor laser chip, the first integrating sphere having a first accommodating cavity for receiving the first beam and detecting the optical power of the first beam, and a through hole provided on the side of the first integrating sphere away from the semiconductor laser chip;

[0005] A polarization beam splitter is disposed on the side of the first integrating sphere away from the semiconductor laser chip, and the first integrating sphere transmits a portion of the first beam to the polarization beam splitter through the through-hole;

[0006] The second integrating sphere is disposed on the side of the polarization beam splitter away from the first integrating sphere. The second integrating sphere has a second accommodating cavity for receiving the second beam emitted through the through hole and the third beam emitted by the polarization beam splitter, thereby testing the degree of polarization of the second beam.

[0007] The polarization beam splitter moves along the optical axis of the second beam transmitted through the through-hole.

[0008] The second integrating sphere acquires the first relative power of the third beam passing through the polarization beam splitter before the polarization beam splitter moves; the second integrating sphere acquires the second relative power of the second beam transmitted directly from the through-hole after the polarization beam splitter moves.

[0009] The testing system includes a controller connected to the second integrating sphere, used to obtain the polarization degree of the second beam based on the first relative power and the second relative power.

[0010] The testing system includes a guide rail and a driving assembly. The guide rail extends along a direction perpendicular to the optical axis of the second beam. The polarization beam splitter is disposed on the guide rail. The driving assembly drives the guide rail to move the polarization beam splitter along the extension direction of the guide rail.

[0011] The first integrating sphere is equipped with an optical fiber output interface.

[0012] The testing system includes an optical fiber and a spectrometer. The spectrometer is connected to the optical fiber output interface through the optical fiber and is used to perform spectral testing on the first beam.

[0013] The testing system further includes a heat dissipation component, on which the semiconductor laser chip is disposed, and the heat dissipation component is used to dissipate heat from the semiconductor laser chip.

[0014] The heat dissipation component includes a heat sink, a cooling chip, and a water-cooling module stacked in sequence, with the semiconductor laser chip disposed on the heat sink.

[0015] The first integrating sphere is a large integrating sphere, the second integrating sphere is a small integrating sphere, and the testing system includes a first photodetector and a second photodetector. The first photodetector is disposed in the first accommodating cavity, and the second photodetector is disposed in the second accommodating cavity.

[0016] To address the aforementioned problems, this application also provides a testing method for semiconductor lasers, applied to the testing system described above, comprising:

[0017] The first beam from the semiconductor laser chip is received through the first integrating sphere, and the optical power of the first beam is detected.

[0018] The second beam is received by the polarization beam splitter, so that the polarization beam splitter emits the third beam.

[0019] The second beam and the third beam are received through the second integrating sphere, and the degree of polarization of the second beam is tested.

[0020] The step of receiving the second beam and the third beam through the second integrating sphere and testing the polarization degree of the second beam includes:

[0021] Before the polarization beam splitter moves, the first relative power of the third beam is obtained through the second integrating sphere;

[0022] After the polarization beam splitter moves, the second beam transmitted directly by the first integrating sphere is received through the second integrating sphere, and the second relative power of the second beam is obtained through the second integrating sphere.

[0023] The degree of polarization of the second beam is calculated based on the first relative power and the second relative power.

[0024] The beneficial effects of this application are as follows: The testing system provided by this application includes a semiconductor laser chip, a first integrating sphere, a polarization beam splitter, and a second integrating sphere. A first beam generated by the semiconductor laser chip is tested for optical power in the first integrating sphere. A second beam passes through a through-hole in the first integrating sphere, passes through the polarization beam splitter, and reaches the second integrating sphere, where the degree of polarization of the second beam is tested. This testing system can simultaneously test the optical power and degree of polarization of the semiconductor laser chip, shortening testing time, improving testing efficiency, and enhancing the user experience. Attached Figure Description

[0025] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0026] in:

[0027] Figure 1 This is a schematic diagram of the structure of one embodiment of the testing system of this application;

[0028] Figure 2 This is a flowchart illustrating an embodiment of the testing method of this application;

[0029] Figure 3 yes Figure 2 The diagram shows a specific flow chart of an embodiment of the test method step S13.

[0030] Reference numerals: Test system 1; Semiconductor laser chip 10; First integrating sphere 20; Through hole 21; Polarization beam splitter 30; Guide rail 31; Second integrating sphere 40; Spectrometer 50; Optical fiber 51; Heat dissipation component 60; Heat sink 61; Cooler 62; Water cooling module 63; First direction X; Second direction Y. Detailed Implementation

[0031] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustrative purposes only and are not intended to limit the scope of this application. Furthermore, it should be noted that, for ease of description, only the parts relevant to this application are shown in the accompanying drawings, not the entire structure. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without inventive effort are within the scope of protection of this application.

[0032] The terms "first," "second," etc., used in this application are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or apparatuses.

[0033] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0034] Please see Figure 1 , Figure 1 This is a schematic diagram of the structure of one embodiment of the test system of this application. Figure 1 As shown, the semiconductor laser test system 1 provided in this application includes a semiconductor laser chip 10, a first integrating sphere 20, a polarization beam splitter 30, and a second integrating sphere 40.

[0035] The center of the first integrating sphere 20 is located on the optical axis of the first beam generated by the semiconductor laser chip 10; the polarization beam splitter 30 is disposed on the side of the first integrating sphere 20 away from the semiconductor laser chip 10, for example, the polarization beam splitter 30 can be disposed in parallel with the first integrating sphere 20 along the optical axis of the first beam; the second integrating sphere 40 is disposed on the side of the polarization beam splitter 30 away from the first integrating sphere 20.

[0036] Specifically, the first integrating sphere 20 has a first accommodating cavity, which is used to receive the first beam generated by the semiconductor laser chip 10 and to test the optical power of the first beam. At the same time, a through hole 21 is provided on the side of the first integrating sphere 20 away from the semiconductor laser chip 10, which can transmit a second beam. The polarization beam splitter 30 is used to receive the second beam transmitted through the through hole 21 and separate the beams with two polarization directions in the second beam, and emit a third beam with only one polarization direction. The second integrating sphere 40 has a second accommodating cavity, which is used to receive the second beam emitted from the through hole 21 and the third beam emitted from the polarization beam splitter 30, and then to test the degree of polarization of the second beam.

[0037] Based on the aforementioned test system 1, the optical power and polarization degree of the semiconductor laser chip 10 can be measured simultaneously in one test system 1, which shortens the measurement time and improves the measurement efficiency.

[0038] Optionally, the polarization beam splitter 30 moves along the optical axis of the second beam transmitted from the through-hole 21.

[0039] Specifically, the polarization beam splitter 30 can move up and down along the optical axis of the second beam transmitted from the through-hole 21, so as to split the beam entering the second integrating sphere 40 into a third beam emitted through the polarization beam splitter 30 and a second beam transmitted directly from the through-hole 21; wherein, the optical axis of the second beam transmitted from the through-hole 21 is defined as the first direction X, and the optical axis of the second beam transmitted from the through-hole 21 is defined as the second direction Y, and the second direction Y is perpendicular to the first direction X.

[0040] Optionally, the second integrating sphere 40 acquires the first relative power of the third beam passing through the polarization beam splitter 30 before the polarization beam splitter 30 moves, and acquires the second relative power of the second beam transmitted directly through the through-hole 21 after the polarization beam splitter 30 moves.

[0041] Specifically, before moving, the polarization beam splitter 30 is located in the direction of the optical axis of the second beam transmitted from the through-hole 21, meaning the second beam needs to pass through the polarization beam splitter 30 to reach the second integrating sphere 40. After receiving the second beam, the polarization beam splitter 30 generates a third beam that is emitted. At this time, the second integrating sphere 40 receives the third beam and measures the first relative power of the third beam. After moving, the polarization beam splitter 30 is located outside the direction of the optical axis of the second beam transmitted from the through-hole 21, meaning the second beam does not need to pass through the polarization beam splitter 30 to reach the second integrating sphere 40. At this time, the second integrating sphere 40 receives the second beam and measures the second relative power of the second beam.

[0042] Optionally, test system 1 includes a controller (not shown).

[0043] The controller is connected to the second integrating sphere 40 and is used to obtain the polarization degree of the beam emitted by the semiconductor laser chip 10 based on the first relative power and the second relative power.

[0044] Specifically, since the device only intercepts part of the first beam generated by the semiconductor laser chip 10 when it passes through the first integrating sphere 20, the through hole 21 and the second integrating sphere 40, without changing the information carried in the beam, the polarization degree of the second beam measured in the second integrating sphere 40 is the polarization degree of the first beam generated by the semiconductor laser chip 10 in that polarization direction.

[0045] The polarization beam splitter 30 is configured to move along the first direction X, so that the second integrating sphere 40 can obtain the first relative power and the second relative power. Then, the polarization degree of the first beam emitted by the semiconductor laser chip 10 is obtained through the controller connected to the second integrating sphere 40, making the polarization degree test of the beam more convenient and improving the user experience.

[0046] Optionally, the test system 1 includes a guide rail 31 and a drive assembly (not shown).

[0047] Among them, the guide rail 31 extends along the first direction X.

[0048] Specifically, the polarization beam splitter 30 is mounted on the guide rail 31, and the driving component is used to drive the guide rail 31 so that the polarization beam splitter 30 can move along the extension direction of the guide rail 31 to achieve the test of the polarization degree of the beam.

[0049] Optionally, the first integrating sphere 20 is equipped with a fiber optic output interface (not shown in the figure);

[0050] Optionally, the test system 1 also includes a spectrometer 50 and an optical fiber 51.

[0051] Specifically, the spectrometer 50 is connected to the fiber optic output interface via fiber optic 51, thereby receiving the first beam generated by the semiconductor laser chip transmitted via the first integrating sphere 20, and performing spectral testing on the first beam.

[0052] The first integrating sphere 20 is configured to have an optical fiber output interface, which can be connected to the spectrometer 50 in the test system 1 to realize the spectral testing of the first beam generated by the semiconductor laser chip 10, making the test system 1 more comprehensive and providing more convenience for users.

[0053] Optionally, the test system 1 also includes a heat dissipation component 60.

[0054] The semiconductor laser chip 10 is disposed on the heat dissipation component 60, which is used to dissipate heat from the semiconductor laser chip 10.

[0055] Specifically, the heat dissipation assembly 60 includes a heat sink 61, a cooling chip 62, and a water-cooling module 63 stacked sequentially. The semiconductor laser chip 10 is mounted on the heat sink 61, which dissipates heat from the chip. For example, a copper heat sink can be used to dissipate heat from the semiconductor laser chip 10. Users can change the material of the heat sink according to their actual needs; this application does not limit this. The cooling chip 62 is used for cooling or heating, and the water-cooling module 63 is placed at the bottom of the cooling chip 62 to dissipate heat from the bottom of the cooling chip 62.

[0056] The heat dissipation component 60 is disposed under the semiconductor laser chip 10 to dissipate heat from the semiconductor laser chip 10, ensuring that the semiconductor laser chip 10 is at a suitable operating temperature and extending the operating time of the semiconductor laser chip 10.

[0057] Optionally, the first integrating sphere 20 is a large integrating sphere and the second integrating sphere 40 is a small integrating sphere. Users can choose the size of the integrating sphere according to the test standard requirements and the size of the object being tested. This application does not limit this.

[0058] Optionally, the test system 1 includes a first photodetector (not shown) and a second photodetector (not shown).

[0059] The first photodetector is disposed in the first accommodating cavity and is used to measure the optical power of the first beam generated by the semiconductor laser chip 10; the second photodetector is disposed in the second accommodating cavity and is used to measure the first relative power of the third beam before the polarization beam splitter 30 moves and the second relative power of the second beam after the polarization beam splitter 30 moves, and calculates the degree of polarization of the beam of the semiconductor laser chip 10 by the controller.

[0060] In summary, the polarization beam splitter 30 is configured to move up and down along the first direction X, enabling the measurement of the polarization degree of the second beam within the second integrating sphere 40. This allows for the simultaneous testing of the optical power and polarization degree of the first beam emitted by the semiconductor laser chip 10 within the same system, shortening the testing time and improving testing efficiency. Simultaneously, the spectrometer 50 is connected to the first integrating sphere 20 to perform spectral testing of the first beam, enabling the testing of the optical power, polarization degree, and spectrum of the semiconductor laser chip 10 within the same testing system 1. This makes the testing system 1 more comprehensive and enhances the user experience.

[0061] To better enable the testing of the semiconductor laser chip 10, this application also provides a testing method for semiconductor lasers applied to the testing system 1. Figure 2 This is a flowchart illustrating an embodiment of the testing method of this application. Figure 2 As shown, the test method includes the following steps:

[0062] S11: Receive the first beam of the semiconductor laser through the first integrating sphere 20 and detect the optical power of the first beam.

[0063] Specifically, the first beam generated by the semiconductor laser chip 10 enters the first accommodating cavity of the first integrating sphere 20, and the first photoelectric tester in the first accommodating cavity tests the first beam to obtain the optical power of the first beam.

[0064] S12: Receive the second beam through the polarization beam splitter 30 so that the polarization beam splitter emits the third beam.

[0065] Specifically, the first integrating sphere 20 has a through hole 21 through which the second beam can be emitted. At this time, the polarization beam splitter 30 can receive the second beam and separate it according to the polarization direction to generate a third beam.

[0066] S13: Receive the second beam and the third beam through the second integrating sphere 40, and test the polarization degree of the second beam.

[0067] Specifically, Figure 3 yes Figure 2 The diagram shows a detailed flowchart of an embodiment of the test method step S13. Figure 3 As shown, step S13 includes the following steps:

[0068] S131: Before the polarization beam splitter 30 moves, the first relative power of the third beam is obtained through the second integrating sphere 40.

[0069] Specifically, before moving, the polarization beam splitter 30 is located in the direction of the optical axis of the second beam transmitted from the through-hole 21. That is, the second beam needs to pass through the polarization beam splitter 30 to reach the second integrating sphere 40. The polarization beam splitter 30 receives the second beam and generates a third beam that is emitted. The third beam enters the second accommodating cavity of the second integrating sphere 40. The second photodetector in the second accommodating cavity measures the first relative power of the third beam.

[0070] S132: After the polarization beam splitter 30 moves, the second beam transmitted directly by the first integrating sphere 20 is received through the second integrating sphere 40, and the second relative power of the second beam is obtained through the second integrating sphere 40.

[0071] Specifically, after the polarization beam splitter 30 moves, it is located outside the optical axis direction of the second beam transmitted from the through hole 21. That is, the second beam can reach the second integrating sphere 40 without passing through the polarization beam splitter 30. At this time, the second beam enters the second accommodating cavity of the second integrating sphere 40, and the second photodetector in the second accommodating cavity measures the second relative power of the second beam.

[0072] S133: Calculate the degree of polarization of the second beam based on the first relative power and the second relative power.

[0073] Specifically, the controller receives the first relative power and the second relative power transmitted by the second integrating sphere 40, and obtains the polarization degree of the second beam by the percentage of the first relative power to the second relative power. Since the device only intercepts part of the first beam when the first beam passes through the first integrating sphere 20, the through hole 21 and the second integrating sphere 40, without changing the information carried in the first beam, the polarization degree of the second beam measured in the second integrating sphere 40 is the polarization degree of one polarization direction of the first beam generated by the semiconductor laser chip 10, that is, the polarization degree of the first beam generated by the semiconductor laser chip 10 is obtained.

[0074] In summary, the semiconductor laser chip 10 generates a first beam, which enters the first cavity of the first integrating sphere 20, and the optical power of the first beam is measured therein. The beam is then emitted through the through-hole 21, passes through the polarization beam splitter 30 to generate a third beam, and enters the second integrating sphere 40 to measure the first relative power of the third beam. The polarization beam splitter 30 is then removed, allowing the second beam, which passed through the through-hole 21, to directly enter the second integrating sphere 40, and the second relative power of the second beam is measured. The controller calculates the degree of polarization of the second beam based on the first and second relative powers. This testing method allows for the simultaneous measurement of the optical power and degree of polarization of the semiconductor laser in the same testing system 1, shortening the testing time, improving testing efficiency, and enhancing the user experience.

[0075] Unlike existing technologies, this application places a first integrating sphere 20 in front of the semiconductor laser chip 10 to test the optical power of the semiconductor laser chip 10; and sets a through hole 21 on the first integrating sphere 20, and sets a polarization beam splitter 30 that can move along the first direction X behind the through hole 21, so that the first relative power and the second relative power can be measured in the second integrating sphere 40, and then the polarization degree of the semiconductor laser chip 10 is obtained by the controller. This realizes the simultaneous measurement of two important indicators of semiconductor laser, optical power and polarization degree, in the same test system, reducing costs, shortening test time, and improving test efficiency. At the same time, a spectrometer 50 can be connected to the first integrating sphere 20 to test the spectrum of the semiconductor laser chip 10, making the test system 1 more comprehensive and improving the user experience.

[0076] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A test system for a semiconductor laser, characterized by, The semiconductor laser includes a semiconductor laser chip, and the testing system includes: A first integrating sphere, the center of which is located on the optical axis of the first beam generated by the semiconductor laser chip, the first integrating sphere having a first accommodating cavity for receiving the first beam and detecting the optical power of the first beam, and a through hole provided on the side of the first integrating sphere away from the semiconductor laser chip; A polarization beam splitter is disposed on the side of the first integrating sphere away from the semiconductor laser chip, and the first integrating sphere transmits a portion of the first beam to the polarization beam splitter through the through-hole; The second integrating sphere is disposed on the side of the polarization beam splitter away from the first integrating sphere. The second integrating sphere has a second accommodating cavity for receiving the second beam emitted through the through hole and the third beam emitted through the polarization beam splitter, thereby testing the degree of polarization of the second beam. The first integrating sphere is provided with an optical fiber output interface; the test system includes an optical fiber and a spectrometer, the spectrometer being connected to the optical fiber output interface through the optical fiber for performing spectral testing on the first beam.

2. The test system of claim 1, wherein, The polarization beam splitter moves along the optical axis of the second beam transmitted from the through-hole.

3. The test system of claim 2, wherein, The second integrating sphere acquires the first relative power of the third beam passing through the polarization beam splitter before the polarization beam splitter moves; the second integrating sphere acquires the second relative power of the second beam transmitted directly from the through-hole after the polarization beam splitter moves.

4. The test system of claim 3, wherein, The testing system includes a controller connected to the second integrating sphere, used to obtain the degree of polarization of the second beam based on the first relative power and the second relative power.

5. The test system of claim 3, wherein, The testing system includes a guide rail and a driving assembly. The guide rail extends along a direction perpendicular to the optical axis of the second beam. The polarization beam splitter is disposed on the guide rail. The driving assembly is used to drive the guide rail so that the polarization beam splitter moves along the extension direction of the guide rail.

6. The test system of any of claims 1-5, wherein, The testing system also includes a heat dissipation component, on which the semiconductor laser chip is disposed, and the heat dissipation component is used to dissipate heat from the semiconductor laser chip.

7. The test system of claim 6, wherein, The heat dissipation assembly includes a heat sink, a cooling chip, and a water-cooling module stacked in sequence, with the semiconductor laser chip disposed on the heat sink.

8. The test system of any of claims 1-5, wherein, The first integrating sphere is a large integrating sphere, and the second integrating sphere is a small integrating sphere. The testing system includes a first photodetector and a second photodetector. The first photodetector is disposed in the first accommodating cavity, and the second photodetector is disposed in the second accommodating cavity.

9. A method of testing a semiconductor laser, characterized by, The test system applied to any one of claims 1-8 includes: The first beam from the semiconductor laser chip is received through the first integrating sphere, and the optical power and spectrum of the first beam are detected. The second beam is received by the polarization beam splitter, so that the polarization beam splitter emits the third beam. The second beam and the third beam are received through the second integrating sphere, and the degree of polarization of the second beam is tested.

10. The test method of claim 9, wherein, The step of receiving the second beam and the third beam through the second integrating sphere and testing the polarization degree of the second beam includes: Before the polarization beam splitter moves, the first relative power of the third beam is obtained through the second integrating sphere; After the polarization beam splitter moves, the second beam transmitted directly by the first integrating sphere is received through the second integrating sphere, and the second relative power of the second beam is obtained through the second integrating sphere. The degree of polarization of the second beam is calculated based on the first relative power and the second relative power.

Images