Semiconductor device and semiconductor module

Abstract

A semiconductor device and a semiconductor module capable of stabilizing characteristics are provided. According to an embodiment, a semiconductor device includes first to third electrodes, a first wiring member, a semiconductor member, and an insulating member. The semiconductor member is provided between the first electrode and the second electrode and between the first electrode and a first extension portion of the first wiring member in a first direction. The semiconductor member includes first to sixth semiconductor regions. The sixth semiconductor region is electrically connected to the second electrode and is of a first conductivity type. At least a portion of the sixth semiconductor region is positioned between a portion of the second semiconductor region and the first extension portion. The insulating member includes a first insulating region. The first insulating region is provided between the third electrode and the semiconductor member.

Description

[0001] This application is based on Japanese Patent Application 2021-109805 (filed July 1, 2021), from which it enjoys priority. This application incorporates the entire contents of that application by reference. Technical Field

[0002] Embodiments of the present invention relate to semiconductor devices and semiconductor modules. Background Technology

[0003] For example, in semiconductor devices such as transistors, stable characteristics are desired. Summary of the Invention

[0004] The present invention provides a semiconductor device and semiconductor module that can stabilize characteristics.

[0005] According to an embodiment of the present invention, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first wiring component, a semiconductor component, and an insulating component. The direction from the first electrode to the second electrode is along a first direction. The first wiring component includes a first extension. The first extension extends along a second direction intersecting the first direction. A third direction from the first extension to the second electrode intersects a first plane including both the first and second directions. The third electrode extends along the third direction. A portion of the third electrode is located between the first electrode and the first extension. Another portion of the third electrode is located between the first electrode and the second electrode. The third electrode is electrically connected to the first extension. The semiconductor component is disposed in the first direction between the first electrode and the second electrode, and between the first electrode and the first extension. The semiconductor component includes a first semiconductor region to a sixth semiconductor region. The first semiconductor region is of a first conductivity type. The first semiconductor region includes a first partial region and a second partial region. The first partial region is located in the first direction between the first electrode and the third electrode. The direction from the third electrode to the second partial region is along the second direction. The second semiconductor region is electrically connected to the second electrode and is of a second conductivity type. The direction from the third electrode to the second semiconductor region is along the second direction. The third semiconductor region is electrically connected to the second electrode and is of the first conductivity type. A portion of the second semiconductor region is located between the second portion region and the third semiconductor region in the first direction. The direction from the third electrode to at least a portion of the third semiconductor region is along the second direction. The fourth semiconductor region is disposed between the first electrode and the first semiconductor region and is of the second conductivity type. The fifth semiconductor region is disposed between the first electrode and the first semiconductor region and is of the first conductivity type. The direction from the fourth semiconductor region to the fifth semiconductor region intersects the first direction. The sixth semiconductor region is electrically connected to the second electrode and is of the first conductivity type. At least a portion of the sixth semiconductor region is located between another portion of the second semiconductor region and the first extension. The insulating component includes a first insulating region. The first insulating region is disposed between the third electrode and the semiconductor component.

[0006] The semiconductor device based on the above structure can provide a semiconductor device and semiconductor module that can stabilize characteristics. Attached Figure Description

[0007] Figure 1 This is a schematic diagram illustrating a semiconductor device according to the first embodiment.

[0008] Figure 2(a) and Figure 2 (b) is a schematic diagram illustrating a semiconductor device according to the first embodiment.

[0009] Figure 3 This is a schematic diagram illustrating a semiconductor device according to the first embodiment.

[0010] Figure 4 This is a schematic diagram illustrating a semiconductor device according to the first embodiment.

[0011] Figure 5 This is a schematic diagram illustrating a semiconductor device according to the first embodiment.

[0012] Figure 6 This is a schematic diagram illustrating a semiconductor device according to the first embodiment.

[0013] Figure 7 This is a schematic diagram illustrating a semiconductor device according to the first embodiment.

[0014] Figure 8 This is a schematic diagram illustrating a semiconductor device according to the first embodiment.

[0015] Figure 9 This is a schematic diagram illustrating a semiconductor device according to the first embodiment.

[0016] Figure 10 This is a schematic diagram illustrating a semiconductor device according to the first embodiment.

[0017] Figure 11 (a) and Figure 11 (b) is a circuit diagram showing an example of the use of the semiconductor device of the first embodiment.

[0018] Figure 12 (a) and Figure 12 (b) is a schematic diagram illustrating an example of the use of the semiconductor device according to the first embodiment.

[0019] Figure 13 This is a schematic diagram illustrating a semiconductor device according to the first embodiment.

[0020] Figure 14 This is a schematic diagram illustrating a semiconductor device according to the first embodiment.

[0021] Figure 15 This is a schematic diagram illustrating a semiconductor device according to the first embodiment.

[0022] Figure 16 This is a schematic diagram illustrating a semiconductor device according to the first embodiment.

[0023] Figure 17 This is a schematic diagram illustrating a semiconductor device according to the first embodiment.

[0024] Figure 18 This is a schematic diagram illustrating a semiconductor device according to the first embodiment.

[0025] Figure 19 This is a schematic diagram illustrating a semiconductor device according to the first embodiment.

[0026] Figure 20 This is a schematic diagram illustrating a semiconductor device according to the second embodiment.

[0027] Figure 21 (a) and Figure 21 (b) is a schematic diagram illustrating a semiconductor device according to the second embodiment.

[0028] Figure 22 This is a schematic diagram illustrating a semiconductor device according to the second embodiment.

[0029] Figure 23 This is a schematic diagram illustrating a semiconductor device according to the second embodiment.

[0030] Figure 24 This is a schematic diagram illustrating a semiconductor device according to the second embodiment.

[0031] Figure 25 This is a schematic diagram illustrating a semiconductor device according to the second embodiment.

[0032] Figure 26 This is a schematic diagram illustrating a semiconductor device according to the second embodiment.

[0033] Figure 27 This is a schematic diagram illustrating a semiconductor device according to the second embodiment.

[0034] Figure 28 This is a schematic diagram illustrating a semiconductor device according to a second embodiment.

[0035] Figure 29 This is a schematic diagram illustrating a semiconductor device according to the second embodiment.

[0036] Figure 30 This is a schematic diagram illustrating a semiconductor device according to the second embodiment.

[0037] Explanation of reference numerals in the attached figures

[0038] 10C…carriers, 10M…semiconductor components, 10T…trench, 11~17…first~seventh semiconductor regions, 11a~11d…first~fourth partial regions, 12a, 12b…regions, 13A…third semiconductor region, 16A…sixth semiconductor region, 40M…insulating components, 41~45…first~fifth insulating regions, 51~54…first~fourth electrodes, 52C…second electrode connection, 52F…second electrode planar portion, 58…first conductive component, 58C…first conductive component connection, 61, 62…first and second extensions, 61C, 62C…first and second wiring connection, 61M, 62M…first and second wiring components, 61P, 62P…pad portions, 70…control circuit, 75… Control unit, 78…power supply, 110, 111, 115, 120…semiconductor device, 210…semiconductor module, C1, C2…first and second collectors, D1~D3…first to third direction, DM…diode mode, E1, E2…first and second emitters, G1, G2…first and second gates, IM…IGBT mode, L13…length of the third semiconductor region, L16…length of the sixth semiconductor region, L53…length, LE…load, Lx61, Ly61…length, OFF…off state, OP1, OP2…first and second operation, P1~P3…parts, Q1, Q2…first and second elements, VG1, VG2…voltage, Vdd, Vss…voltage, b1, b2…boundary, tm…time Detailed Implementation

[0039] Hereinafter, various embodiments of the present invention will be described with reference to the accompanying drawings.

[0040] The accompanying drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the size between parts, etc., may not be the same as in reality. Even when showing the same parts, there may be cases where the dimensions and ratios of each other are represented differently according to the accompanying drawings.

[0041] In this application specification and figures, the same reference numerals are used for elements that are described above with respect to previously presented figures, and detailed descriptions are omitted where appropriate.

[0042] (First Implementation)

[0043] Figure 1 , Figure 2 of (a) Figure 2 of (b) Figures 3 to 10 This is a schematic diagram illustrating a semiconductor device according to the first embodiment.

[0044] Figure 1 This is an example Figure 10 The three-dimensional view of part P1 shown. Figure 2(a) is with Figure 10 The top view shown is related to part P2. Figure 2 (b) is with Figure 10 The perspective top view related to part P2. Figures 3-9 They are Figure 2 (b) Sectional view at lines A1-A2, B1-B2, C1-C2, D1-D2, E1-E2, F1-F2 and G1-G2. Figure 1 The A1-A2 line, B1-B2 line, C1-C2 line and D1-D2 line and Figure 2 A portion of each of lines A1-A2, B1-B2, C1-C2, and D1-D2 in (b) corresponds to a part of each line. Figure 10 It is a top view.

[0045] like Figure 3 As shown, the semiconductor device 110 of the embodiment includes a first electrode 51. As... Figure 4 and Figure 10 As shown, the semiconductor device 110 includes a second electrode 52 and a first wiring component 61M. For example... Figure 1 and Figure 3 As shown, the semiconductor device 110 includes a third electrode 53, a semiconductor component 10M, and an insulating component 40M. Figure 1 In order to make the diagram easier to observe, the second electrode 52 and the insulating component 40M are omitted.

[0046] like Figure 3 As shown, the direction from the first electrode 51 to the second electrode 52 is along the first direction D1. This first direction is defined as the Z-axis direction. A direction perpendicular to the Z-axis direction is defined as the Y-axis direction. A direction perpendicular to both the Z-axis and Y-axis directions is defined as the X-axis direction.

[0047] like Figure 1 and Figure 2 As shown in (b), the first wiring component 61M includes a first extension 61. The first extension 61 extends along a second direction D2. The second direction D2 intersects the first direction D1. The second direction D2 is, for example, the Y-axis direction. The length of the first extension 61 (the length along the Y-axis direction) is longer than the length of the first extension 61 along the X-axis direction.

[0048] like Figure 2 of (b) Figure 7 and Figure 10 As shown, a third direction D3 from the first extension 61 to the second electrode 52 intersects a first plane that includes the first direction D1 and the second direction D2. The first plane is, for example, the ZY plane. The third direction D3 can be, for example, the X-axis direction.

[0049] In this example, a plurality of second electrodes 52 and a plurality of first extensions 61 are provided. A "second electrode 52" is one of a plurality of second electrodes 52. A "first extension 61" is one of a plurality of first extensions 61.

[0050] Figure 2 Example (a) illustrates semiconductor component 10M and third electrode 53. For example... Figure 2 As shown in (a), the third electrode 53 extends along the third direction D3. The length of the third electrode 53 along the third direction D3 is longer than the length L53 of the third electrode 53 along the second direction D2. In this example, multiple third electrodes 53 are provided. "Third electrode 53" is one of multiple third electrodes 53.

[0051] like Figure 7 As shown, a portion of the third electrode 53 is located between the first electrode 51 and the first extension 61. A portion of the third electrode 53 is located between the first portion region 11a of the first semiconductor region 11 and the first extension 61.

[0052] like Figure 7 As shown, another portion of the third electrode 53 is located between the first electrode 51 and the second electrode 52. The other portion of the third electrode 53 is located between the first portion region 11a of the first semiconductor region 11 and the second electrode 52. The third electrode 53 is electrically connected to the first extension 61. In this example, the first wiring component 61M includes a first wiring connection portion 61C. The first wiring connection portion 61C is disposed between the third electrode 53 and the first extension 61. The first wiring connection portion 61C electrically connects the third electrode 53 and the first extension 61. The boundary between the first extension 61 and the first wiring connection portion 61C may be defined or indefined. The first extension 61 and the first wiring connection portion 61C may also be seamlessly continuous.

[0053] like Figure 7 As shown, the semiconductor component 10M is disposed in the first direction D1 between the first electrode 51 and the second electrode 52, and between the first electrode 51 and the first extension 61. Figure 1 As shown, semiconductor component 10M includes first to sixth semiconductor regions 11 to 16.

[0054] The first semiconductor region 11 is of the first conductivity type. For example... Figure 1 and Figure 3 As shown, the first semiconductor region 11 includes a first partial region 11a and a second partial region 11b. The first partial region 11a is located between the first electrode 51 and the third electrode 53 in a first direction D1. The direction from the third electrode 53 to the second partial region 11b is along a second direction D2.

[0055] The second semiconductor region 12 is of the second conductivity type. The first conductivity type is either n-type or p-type. The second conductivity type is either n-type or p-type. Hereinafter, the first conductivity type is n-type and the second conductivity type is p-type.

[0056] The second semiconductor region 12 is electrically connected to the second electrode 52. For example... Figure 8 As shown, in this example, the second electrode 52 includes a second electrode planar portion 52F and a second electrode connecting portion 52C. The second electrode planar portion 52F extends along the XY plane. Figure 2 As shown in (b), the second electrode connection portion 52C extends along the third direction D3. Figure 8 As shown, a portion of the second electrode connection portion 52C is located between the second semiconductor region 12 and the second electrode planar portion 52F in the first direction D1. The second electrode connection portion 52C electrically connects the second semiconductor region 12 and the second electrode planar portion 52F.

[0057] like Figure 8 As shown, the second semiconductor region 12 may also include regions 12a and 12b. A portion of region 12a is disposed between the first semiconductor region 11 and region 12b. Another portion of region 12a is disposed between the first semiconductor region 11 and the third semiconductor region 13. Region 12b is disposed between region 12a and the second electrode 52. The impurity concentration of the second conductivity type in region 12b is higher than the impurity concentration of the second conductivity type in region 12a. Region 12a is, for example, a p-region. Region 12b is a p-region. + Region 12b. By setting region 12b, for example, a lower contact resistance is obtained between the second semiconductor region 12 and the second electrode 52.

[0058] like Figure 1 and Figure 3 As shown, the direction from the third electrode 53 toward the second semiconductor region 12 is along the second direction D2.

[0059] like Figure 3 As shown, the third semiconductor region 13 is electrically connected to the second electrode 52. For example, the third semiconductor region 13 is in contact with the second electrode 52. Figure 3 As shown, a portion of the second semiconductor region 12 lies between the second partial region 11b and the third semiconductor region 13 in the first direction D1. The direction from the third electrode 53 to at least a portion of the third semiconductor region 13 is along the second direction D2. For example, the boundary b2 between the second semiconductor region 12 and the third semiconductor region 13 is opposite to the third electrode 53 in the second direction D2. For example, the boundary b1 between the first semiconductor region 11 (second partial region 11b) and the second semiconductor region 12 is opposite to the third electrode 53 in the second direction D2.

[0060] like Figure 1 and Figure 3 As shown, the fourth semiconductor region 14 is disposed between the first electrode 51 and the first semiconductor region 11. The fourth semiconductor region 14 is of the second conductivity type.

[0061] like Figure 1 and Figure 3 As shown, the fifth semiconductor region 15 is disposed between the first electrode 51 and the first semiconductor region 11. The fifth semiconductor region 15 is of the first conductivity type. The direction from the fourth semiconductor region 14 to the fifth semiconductor region 15 intersects the first direction D1. The direction from the fourth semiconductor region 14 to the fifth semiconductor region 15 is along the XY plane.

[0062] In one example, a fourth semiconductor region 14 and multiple island-shaped fifth semiconductor regions 15 may be provided. The fourth semiconductor region 14 is arranged around the multiple island-shaped fifth semiconductor regions 15. In another example, a fifth semiconductor region 15 and multiple island-shaped fourth semiconductor regions 14 may be provided. The fifth semiconductor regions 15 are arranged around the multiple island-shaped fourth semiconductor regions 14. In yet another example, multiple fourth semiconductor regions 14 and multiple fifth semiconductor regions 15 may be provided.

[0063] like Figure 6 and Figure 8 As shown, the sixth semiconductor region 16 is electrically connected to the second electrode 52. The sixth semiconductor region 16 is of the first conductivity type. Figure 8 As shown, and as already explained, in this example, the second electrode 52 includes a second electrode planar portion 52F and a second electrode connecting portion 52C. The second electrode connecting portion 52C extends along a third direction D3 (see Figure 1). Figure 2 (b)). For example Figure 8 As shown, a portion of the second electrode connection portion 52C is located between the third semiconductor region 13 and the second electrode planar portion 52F in the first direction D1. Another portion of the second electrode connection portion 52C is located between the sixth semiconductor region 16 and the second electrode planar portion 52F in the first direction D1. The second electrode connection portion 52C electrically connects the third semiconductor region 13 to the second electrode planar portion 52F, and electrically connects the sixth semiconductor region 16 to the second electrode planar portion 52F.

[0064] like Figure 1 , Figure 4 and Figure 6 As shown, at least a portion of the sixth semiconductor region 16 is located between another portion of the second semiconductor region 12 and the first extension 61.

[0065] like Figure 3As shown, the insulating component 40M includes a first insulating region 41. The first insulating region 41 is disposed between the third electrode 53 and the semiconductor component 10M. The first insulating region 41 electrically insulates the third electrode 53 and the semiconductor component 10M from each other.

[0066] like Figure 3 As shown, the insulating component 40M may also include a second insulating region 42. The second insulating region 42 is disposed between the third electrode 53 and the second electrode 52 in the first direction D1. The second insulating region 42 electrically connects the third electrode 53 and the second electrode 52 to each other.

[0067] In the semiconductor device 110, for example, a first operation can be performed. In the first operation, the current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 is, for example, a potential referenced to the potential of the second electrode 52. In the first operation, the current flows from the first electrode 51 to the second electrode 52. In the semiconductor device 110, a second operation can also be performed. In the second operation, the current flows from the second electrode 52 to the first electrode 51.

[0068] Semiconductor device 110 is, for example, an RC-IGBT (Reverse-Conducting Insulated Gate Bipolar Transistor). A first operation corresponds, for example, to IGBT operation (IGBT mode). A second operation corresponds, for example, to diode operation (diode mode). A first electrode 51 is, for example, a collector electrode. A second electrode 52 is, for example, an emitter electrode. A third electrode 53 is, for example, a gate electrode. The first and second operations can be performed repeatedly.

[0069] For example, the second semiconductor region 12 corresponds to a p-type substrate region. The third semiconductor region 13, for example, corresponds to an n-type emitter region.

[0070] like Figure 10 As shown, the first wiring component 61M includes a pad portion 61P. The pad portion 61P is electrically connected to the first extension portion 61. By controlling the potential of the pad portion 61P, the potential of the third electrode 53, which is electrically connected to the first extension portion 61, can be controlled. This enables a switching operation. The region where the third semiconductor region 13 is located is, for example, an operating region (e.g., a cell region).

[0071] like Figure 1As shown, for example, during recovery in diode operation (reverse operation) (e.g., Desat control), charge carriers 10C (e.g., electrons) can move from the first semiconductor region 11, through the second semiconductor region 12 and the third semiconductor region 13, toward the second electrode 52. For example, charge carriers 10C are discharged (pulled out).

[0072] In this embodiment, a sixth semiconductor region 16 is provided in the portion overlapping with the first extension 61. Thus, for example, during recovery in diode operation (reverse operation), charge carriers 10C (e.g., electrons) can move from the first semiconductor region 11, through the second semiconductor region 12 and the sixth semiconductor region 16, toward the second electrode 52 (see reference). Figure 1 Therefore, in the region where the first extension 61 is provided, for example, carrier 10C is also discharged. In this embodiment, carriers can be discharged efficiently.

[0073] Therefore, for example, the reverse recovery current (Irr) can be reduced. For example, a higher breakdown withstand capability can be obtained. For example, stable characteristics can be obtained. For example, high reliability can be obtained. According to the embodiments, a semiconductor device capable of stabilizing characteristics can be provided.

[0074] like Figure 2 As shown in (a), the length of the sixth semiconductor region 16 along the third direction D3 is defined as the length L16 of the sixth semiconductor region. The length of the third semiconductor region 13 along the third direction D3 is defined as the length L13 of the third semiconductor region. In this embodiment, it is preferable that the length L16 of the sixth semiconductor region is longer than the length L13 of the third semiconductor region. This allows for more efficient removal of charge carriers 10C, for example.

[0075] For example, the length L16 of the sixth semiconductor region is preferably more than 10 times the length L13 of the third semiconductor region. This allows for more efficient removal of charge carriers 10C. The length L16 of the sixth semiconductor region is preferably less than 500 times the length L13 of the third semiconductor region. This facilitates the miniaturization of the semiconductor device.

[0076] The length of the sixth semiconductor region, L16, is greater than 10 μm and less than 200 μm. The length of the third semiconductor region, L13, is greater than 0.3 μm and less than 10 μm.

[0077] In the embodiment, the length L16 of the sixth semiconductor region is greater than the length L53 of the third electrode 53 along the second direction D2 (see reference). Figure 2 (a) Length. In one example, the length L53 is, for example, greater than 0.3 μm and less than 1.5 μm.

[0078] like Figure 2As shown in (b), the length of the first wiring connection 61C along the third direction D3 is set to length Lx61. The length of the first wiring connection 61C along the second direction D2 is set to length Ly61. Preferably, length Lx61 is longer than length Ly61. Thus, the first wiring connection 61C is electrically connected to the narrower third electrode 53 with a larger area. For example, it is easy to obtain an electrical connection based on low resistance. More stable operation can be obtained.

[0079] like Figure 2 As shown in (a), the semiconductor component 10M may include a plurality of third semiconductor regions 13 and a plurality of sixth semiconductor regions 16. A portion of the third electrode 53 is located in the second direction D2 between one of the plurality of third semiconductor regions 13 and another of the plurality of third semiconductor regions 13. Another portion of the third electrode 53 is located in the second direction D2 between one of the plurality of sixth semiconductor regions 16 and another of the plurality of sixth semiconductor regions 16.

[0080] like Figure 2 As shown in (a), the plurality of third semiconductor regions 13 may also be arranged along a third direction D3. For example, the direction from one of the plurality of third semiconductor regions 13 to another of the plurality of third semiconductor regions 13 is along the third direction D3. At least a portion of the second semiconductor regions 12 are located in the third direction D3 between one of the plurality of third semiconductor regions 13 and another of the plurality of third semiconductor regions 13.

[0081] like Figure 2 As shown in (a), a portion of the second semiconductor region 12 may also be located between the sixth semiconductor region 16 and the third semiconductor region 13.

[0082] In this embodiment, the impurity concentration of the first conductivity type in the sixth semiconductor region 16 can be substantially the same as that in the third semiconductor region 13. For example, the impurity concentration of the first conductivity type in the sixth semiconductor region 16 is preferably 0.5 times or more and 2 times or less than that in the third semiconductor region 13. The discharge of charge carriers 10C is performed more stably. The manufacture of the semiconductor device becomes easier.

[0083] like Figure 1 and Figure 3As shown, the semiconductor component 10M may also further include a seventh semiconductor region 17 of a first conductivity type. The seventh semiconductor region 17 is disposed between the fourth semiconductor region 14 and the first semiconductor region 11, and between the fifth semiconductor region 15 and the first semiconductor region 11. The seventh semiconductor region 17 is, for example, a buffer layer. For example, the impurity concentration of the first conductivity type in the seventh semiconductor region 17 is higher than the impurity concentration of the first conductivity type in the first semiconductor region 11. For example, the carrier concentration of the first conductivity type in the seventh semiconductor region 17 is higher than the carrier concentration of the first conductivity type in the first semiconductor region 11. The first semiconductor region 11 is, for example, an n-region or an n-region. - Region. The seventh semiconductor region 17 is, for example, n. + area.

[0084] like Figure 3 As shown, in this embodiment, for example, at least a portion of the third semiconductor region 13, a portion of the sixth semiconductor region 16, and the second semiconductor region 12 are in contact with the second electrode 52, resulting in a stable electrical connection.

[0085] like Figure 2 As shown in (a), the semiconductor device 110 may also include a first conductive member 58. The first conductive member 58 extends along a third direction D3. Figure 9 As shown, a portion of the first conductive member 58 is located between a portion of the first semiconductor region 11 and the second electrode 52. Another portion of the first conductive member 58 is located between another portion of the first semiconductor region 11 and the first extension 61. The first conductive member 58 is electrically insulated from the first extension 61. Figure 9 As shown, a portion of an insulating member 40M exists between the first conductive member 58 and the first extension 61. The first conductive member 58 is electrically connected to the second electrode 52. Figure 3 As shown, a third insulating region 43 of the insulating component 40M is provided between the first conductive component 58 and the semiconductor component 10M.

[0086] like Figure 2 (b) and Figure 3 As shown, the third semiconductor region 13 and the second semiconductor region 12 are located between the third electrode 53 and the first conductive component 58 in the second direction D2.

[0087] like Figure 3 As shown, in this example, the second electrode 52 includes a first conductive component connection portion 58C. (As illustrated...) Figure 2 As shown in (b), the first conductive component connection portion 58C extends along the third direction D3. Figure 3As shown, the first conductive component connecting portion 58C is located between the first conductive component 58 and the second electrode surface portion 52F in the first direction D1. The first conductive component connecting portion 58C electrically connects the first conductive component 58 and the second electrode surface portion 52F.

[0088] The first conductive component 58 is, for example, a "virtual gate electrode". Multiple first conductive components 58 may also be provided.

[0089] For example, a trench 10T is formed on the semiconductor layer that becomes the semiconductor component 10M (see reference). Figure 3 The trench 10T extends through the third semiconductor region 13 and the second semiconductor region 12, reaching the first semiconductor region 11. An insulating film, forming the first insulating region 41, is formed on the inner side of the trench 10T. Conductive material is filled into the remaining space of the trench 10T. Thus, the third electrode 53 and the first conductive component 58 are formed.

[0090] Figure 11 (a) and Figure 11 (b) is a circuit diagram showing an example of the use of the semiconductor device of the first embodiment.

[0091] like Figure 11 (a) and Figure 11 As shown in (b), the semiconductor device 115 of the embodiment includes multiple elements (a first element Q1 and a second element Q2, etc.). The first element Q1 and the second element Q2 are respectively capable of being used in the semiconductor device 110 described above.

[0092] The first element Q1 includes a first collector C1, a first emitter E1, and a first gate G1. The second element Q2 includes a second collector C2, a second emitter E2, and a second gate G2. The collector corresponds, for example, to the first electrode 51. The emitter corresponds, for example, to the second electrode 52. The gate corresponds, for example, to the third electrode 53.

[0093] For example, the first emitter E1 is electrically connected to the second collector C2. The first emitter E1 is electrically connected to one end of the load LE. A voltage Vdd is applied between the first collector C1 and the other end of the load LE. A voltage Vss is applied between the other end of the load LE and the second emitter E2. Voltages Vdd and Vss are supplied, for example, by a power supply 78.

[0094] The control circuit 70 includes a control unit 75 that controls the first gate G1 and the second gate G2. Figure 11 In the state (operation) shown in (a), the control unit 75 turns the first gate G1 on / off. Figure 11 In the state (operation) shown in (b), the control unit 75 turns the second gate G2 on / off.

[0095] The semiconductor module 210 in this embodiment includes multiple semiconductor devices (such as a first element Q1 and a second element Q2). The semiconductor module 210 may also include a control circuit 70 (control unit 75) and a power supply 78.

[0096] Figure 12 (a) and Figure 12 (b) is a schematic diagram illustrating an example of the use of the semiconductor device according to the first embodiment.

[0097] Figure 12 (a) and Figure 12 The horizontal axis of (b) is time tm. Figure 12 (a) The vertical axis is the voltage VG1 of the first gate G1. Figure 12 The vertical axis of (b) is the voltage VG2 of the second gate G2.

[0098] For example, in the first element Q1 and the second element Q2, the first action OP1 and the second action OP2 are performed. In the first action OP1, the first element Q1 is in IGBT mode IM. In the second action OP2, the first element Q1 is in the OFF state. In the first action OP1, the second element Q2 is in the OFF state. In the second action OP2, the second element Q2 is in diode mode DM.

[0099] In this implementation, prior to recovery in diode mode DM, charge carriers 10C (e.g., electrons) can be efficiently discharged via the third semiconductor region 13 and the sixth semiconductor region 16. This, for example, reduces the reverse recovery current (Irr).

[0100] Figures 13-19 This is a schematic diagram illustrating a semiconductor device according to the first embodiment.

[0101] Figure 13 It is a top view. Figure 14 Is with Figure 13 The diagram shows a perspective top view related to part P3. Figures 15-19 They are Figure 14 Sectional views at lines A3-A4, B3-B4, B5-B6, H1-H2, and I1-I2.

[0102] like Figure 13 As shown, the semiconductor device 111 in this embodiment includes a second wiring component 62M. As... Figure 14 As shown, semiconductor device 111 includes a fourth electrode 54. Apart from these, the structure of semiconductor device 111 may be the same as that of semiconductor device 110.

[0103] like Figure 13As shown, the second wiring component 62M includes a second extension 62. The second extension 62 extends along a second direction D2. The direction from the second extension 62 towards the first extension 61 is along a third direction D3. In this example, a plurality of second extensions 62 are provided. One of the plurality of second extensions 62 is located in the third direction D3 between one of the plurality of first extensions 61 and another of the plurality of first extensions 61. One of the plurality of first extensions 61 is located in the third direction D3 between one of the plurality of second extensions 62 and another of the plurality of second extensions 62. The second wiring component 62M includes a pad portion 62P. The pad portion 62P is electrically connected to the second extension 62.

[0104] like Figure 14 As shown, the fourth electrode 54 extends along the third direction D3. The direction from the third electrode 53 to the fourth electrode 54 is along the second direction D2.

[0105] like Figure 17 and Figure 19 As shown, a portion of the fourth electrode 54 is located between the first electrode 51 and the second extension 62. Another portion of the fourth electrode 54 is located between the first electrode 51 and the second electrode 52. The fourth electrode 54 is electrically connected to the second extension 62.

[0106] like Figure 17 and Figure 19 As shown, in this example, the second wiring component 62M includes a second wiring connector 62C. The second wiring connector 62C is disposed between the fourth electrode 54 and the second extension 62. The second wiring connector 62C electrically connects the fourth electrode 54 and the second extension 62.

[0107] like Figure 14 As shown, in addition to the third semiconductor region 13 and the sixth semiconductor region 16 mentioned above, the semiconductor component 10M also includes other third semiconductor regions 13A and other sixth semiconductor regions 16A.

[0108] like Figure 15 As shown, a portion of the second semiconductor region 12 is located in the first direction D1 between the first semiconductor region 11 and the other third semiconductor region 13A. Figure 14 As shown, the direction from the fourth electrode 54 toward at least a portion of the other third semiconductor region 13A is along the second direction D2.

[0109] like Figure 17 As shown, at least a portion of the other sixth semiconductor region 16A is located between the second semiconductor region 12 and the second extension 62.

[0110] A portion of the insulating component 40M (the fourth insulating region 44) is disposed between the fourth electrode 54 and the semiconductor component 10M.

[0111] For example, the voltage applied to the pad portion 62P is applied to the fourth electrode 54 via the second wiring member 62M. The fourth electrode 54 functions as a gate electrode, different from the third electrode 53.

[0112] In the semiconductor device 111, by providing another sixth semiconductor region 16A, such as the region where the second extension 62 is provided, carrier 10C is also discharged. For example, the reverse recovery current (Irr) can be reduced. For example, a higher breakdown withstand capability can be obtained. For example, stable characteristics can be obtained.

[0113] In the semiconductor device 111, a voltage (signal) different from the voltage (signal) applied to the third electrode 53 can be applied to the fourth electrode 54. The fourth electrode 54 can be controlled to a state different from that of the third electrode 53. For example, the degree of carrier 10C ejection (pulling) can be adjusted, resulting in more stable operation.

[0114] The semiconductor module 210 of the embodiment includes the semiconductor device 111 of the embodiment and the control unit 75 (see reference). Figure 11 (a) and Figure 11 (b) The control unit 75 is capable of applying a first signal to the first wiring component 61M. The control unit 75 is also capable of applying a second signal, different from the first signal, to the second wiring component 62M.

[0115] (Second Implementation)

[0116] Figure 20 , Figure 21 of (a) Figure 21 of (b) Figures 22-30 This is a schematic diagram illustrating a semiconductor device according to the second embodiment.

[0117] Figure 20 It is a top view. Figure 21 (a) is with Figure 20 The top view shown is related to part P3. Figure 21 (b) is with Figure 20 The perspective top view related to part P3. Figures 22-30 They are Figure 21 (b) Sectional view at lines A1-A2, B1-B2, B7-B8, C1-C2, D1-D2, E1-E2, F1-F2, G1-G2 and J1-J2.

[0118] like Figure 22 As shown, the semiconductor device 120 of the embodiment includes a first electrode 51. As... Figure 22 and Figure 20 As shown, the semiconductor device 120 includes a second electrode 52, a first wiring component 61M, and a second wiring component 62M. For example... Figure 21 (b) and Figure 22 As shown, the semiconductor device 120 includes a third electrode 53, a fourth electrode 54, a semiconductor component 10M, and an insulating component 40M. In this example, the direction from the first electrode 51 to the second electrode 52 also follows the first direction D1 (see reference). Figure 22 ).

[0119] like Figure 21 As shown in (b), the first wiring component 61M includes a first extension 61. The first extension 61 extends along a second direction D2 that intersects the first direction D1. A third direction D3 from the first extension 61 toward the second electrode 52 intersects a first plane that includes the first direction D1 and the second direction D2.

[0120] The second wiring component 62M includes a second extension 62. The second extension 62 extends along a second direction D2. From the second extension 62 toward the second electrode 52, it extends along a third direction D3.

[0121] like Figure 21 As shown in (b), the third electrode 53 extends along the third direction D3. Figure 22 and Figure 27 As shown, a portion of the third electrode 53 is located between the first electrode 51 and the first extension 61. Figure 27 As shown, another portion of the third electrode 53 is located between the first electrode 51 and the second electrode 52. The third electrode 53 is electrically connected to the first extension 61. For example, as... Figure 22 and Figure 27 As shown, the third electrode 53 is electrically connected to the first extension 61 via the first wiring connection portion 61C. Figure 24 As shown, a portion of the third electrode 53 may also be disposed between the first electrode 51 and the second extension 62.

[0122] like Figure 21 As shown in (b), the fourth electrode 54 extends along the third direction D3. Figure 24 and Figure 30 As shown, a portion of the fourth electrode 54 is located between the first electrode 51 and the second extension 62. Figure 30 As shown, another portion of the fourth electrode 54 is located between the first electrode 51 and the second electrode 52. The fourth electrode 54 is electrically connected to the second extension 62. For example, as... Figure 24 and Figure 30 As shown, the fourth electrode 54 is electrically connected to the second extension 62 via the second wiring connection portion 62C. Figure 21As shown in (b), the direction from the third electrode 53 to the fourth electrode 54 is along the second direction D2. Figure 23 As shown, a portion of the fourth electrode 54 may also be disposed between the first electrode 51 and the first extension 61.

[0123] like Figures 22-24 As shown, the semiconductor component 10M is disposed in the first direction D1 between the first electrode 51 and the second electrode 52, between the first electrode 51 and the first extension 61, and between the first electrode 51 and the second extension 62.

[0124] like Figure 21 (a) and Figure 22 As shown, the semiconductor component 10M includes first to sixth semiconductor regions 11 to 16. The first semiconductor region 11 is of a first conductivity type. Figure 22 As shown, the first semiconductor region 11 includes a first partial region 11a, a second partial region 11b, a third partial region 11c, and a fourth partial region 11d. The first partial region 11a is located between the first electrode 51 and the third electrode 53 in a first direction D1. The direction from the third electrode 53 to the second partial region 11b follows a second direction D2. The third partial region 11c is located between the first electrode 51 and the fourth electrode 54 in the first direction D1. The direction from the fourth electrode 54 to the fourth partial region 11d follows the second direction D2.

[0125] like Figure 22 As shown, the second semiconductor region 12 is electrically connected to the second electrode 52. For example, the second semiconductor region 12 is electrically connected to the second electrode 52 via the second electrode connection portion 52C. The second semiconductor region 12 is of a second conductivity type. The direction from the third electrode 53 to the second semiconductor region 12 and the direction from the fourth electrode 54 to the second semiconductor region 12 are along the second direction D2.

[0126] like Figure 22 As shown, the third semiconductor region 13 is electrically connected to the second electrode 52. For example, the third semiconductor region 13 is electrically connected to the second electrode 52 via the second electrode connection portion 52C. The second semiconductor region 12 is of a first conductivity type. A portion of the second semiconductor region 12 is located between the second portion region 11b and the third semiconductor region 13 in the first direction D1. The direction from the third electrode 53 to at least a portion of the third semiconductor region 13 is along the second direction D2.

[0127] like Figure 22 As shown, the fourth semiconductor region 14 is disposed between the first electrode 51 and the first semiconductor region 11. The fourth semiconductor region 14 is of the second conductivity type.

[0128] like Figure 22As shown, the fifth semiconductor region 15 is disposed between the first electrode 51 and the first semiconductor region 11. The fifth semiconductor region 15 is of the first conductivity type. The direction from the fourth semiconductor region 14 to the fifth semiconductor region 15 intersects the first direction D1.

[0129] like Figure 26 As shown, the sixth semiconductor region 16 is electrically connected to the second electrode 52. For example, the sixth semiconductor region 16 is electrically connected to the second electrode 52 via the second electrode connection portion 52C. The sixth semiconductor region 16 is of a first conductivity type. Figure 24 As shown, at least a portion of the sixth semiconductor region 16 is located between another portion of the second semiconductor region 12 and the second extension 62.

[0130] like Figure 22 As shown, at least a portion of the insulating component 40M is disposed between the third electrode 53 and the semiconductor component 10M, and between the fourth electrode 54 and the semiconductor component 10M. For example, a first insulating region 41 is disposed between the third electrode 53 and the semiconductor component 10M. For example, a fourth insulating region 44 is disposed between the fourth electrode 54 and the semiconductor component 10M.

[0131] For example, the second insulating region 42 of the insulating component 40M is disposed between the third electrode 53 and the second electrode 52. For example, the fifth insulating region 45 of the insulating component 40M is disposed between the fourth electrode 54 and the second electrode 52.

[0132] In the semiconductor device 120, the third electrode 53 is electrically connected to the first extension 61, for example, to the pad portion 61P. The fourth electrode 54 is electrically connected to the second extension 62, for example, to the pad portion 62P.

[0133] For example, control unit 75 (refer to) Figure 11 (a) and Figure 11 (b) can apply a first signal to the first wiring component 61M. The control unit 75 can apply a second signal, different from the first signal, to the second wiring component 62M. For example, it can control and implement the gate operation of the third electrode 53 and the carrier discharge operation of the fourth electrode 54, respectively.

[0134] like Figure 21 As shown in (b), the direction from the sixth semiconductor region 16 to the third semiconductor region 13 is inclined relative to the second direction D2 and the third direction D3 in a plane perpendicular to the first direction D1 (in the XY plane). The sixth semiconductor region 16 does not overlap with the third semiconductor region 13 in the third direction D3. The sixth semiconductor region 16 does not overlap with the third semiconductor region 13 in the second direction D2.

[0135] For example, in the region where the third electrode 53 overlaps with the first extension 61, the sixth semiconductor region 16 is not provided. The third electrode 53 is provided between the two third semiconductor regions 13 in the second direction D2.

[0136] For example, a sixth semiconductor region 16 is provided in the region where the fourth electrode 54 overlaps with the second extension 62. The fourth electrode 54 is provided between the two sixth semiconductor regions 16 in the second direction D2.

[0137] In semiconductor device 120, the structure described for semiconductor device 110 can be applied.

[0138] For example, in semiconductor device 120, it is preferable that the length L16 of the sixth semiconductor region is longer than the length L13 of the third semiconductor region (see reference). Figure 21 (a) Thus, for example, the discharge of charge carrier 10C can be carried out more efficiently.

[0139] In the first and second embodiments, the semiconductor component 10M includes, for example, silicon. The semiconductor component 10M may also include, for example, a compound semiconductor. The first electrode 51 includes, for example, aluminum. The second electrode 52 includes, for example, aluminum. At least one of the third electrode 53, the fourth electrode 54, and the first conductive component 58 includes, for example, conductive silicon. The insulating component 40M includes, for example, silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide.

[0140] In this embodiment, information related to the shape of the semiconductor region is obtained, for example, by observation using an electron microscope. Information related to the impurity concentration in the semiconductor region is obtained, for example, by EDX (Energy Dispersive X-ray Spectroscopy) or SIMS (Secondary Ion Mass Spectrometry). Information related to the carrier concentration in the semiconductor region can be obtained, for example, by SCM (Scanning Capacitance Microscopy).

[0141] The implementation methods may also include the following technical solutions.

[0142] (Technical Solution 1)

[0143] A semiconductor device comprising:

[0144] First electrode;

[0145] The second electrode is located along the first direction from the first electrode toward the second electrode;

[0146] A first wiring component includes a first extension extending along a second direction intersecting the first direction, and a third direction from the first extension toward the second electrode intersecting a first plane including the first direction and the second direction.

[0147] A third electrode extends along the third direction, a portion of the third electrode is located between the first electrode and the first extension, another portion of the third electrode is located between the first electrode and the second electrode, and the third electrode is electrically connected to the first extension;

[0148] A semiconductor component is disposed in the first direction between the first electrode and the second electrode and between the first electrode and the first extension, the semiconductor component comprising:

[0149] A first semiconductor region of a first conductivity type, the first semiconductor region comprising a first partial region and a second partial region, the first partial region being located between the first electrode and the third electrode in the first direction, and the direction from the third electrode to the second partial region being along the second direction;

[0150] The second semiconductor region of the second conductivity type is electrically connected to the second electrode, and extends from the third electrode toward the second semiconductor region along the second direction;

[0151] The third semiconductor region of the first conductivity type is electrically connected to the second electrode, and a portion of the second semiconductor region is located between the second portion region and the third semiconductor region in the first direction, with the direction from the third electrode to at least a portion of the third semiconductor region along the second direction;

[0152] The fourth semiconductor region of the second conductivity type is disposed between the first electrode and the first semiconductor region;

[0153] The fifth semiconductor region of the first conductivity type is disposed between the first electrode and the first semiconductor region, and the direction from the fourth semiconductor region to the fifth semiconductor region intersects the first direction; and

[0154] A sixth semiconductor region of the first conductivity type is electrically connected to the second electrode, and at least a portion of the sixth semiconductor region is located between another portion of the second semiconductor region and the first extension; and

[0155] An insulating component includes a first insulating region disposed between the third electrode and the semiconductor component.

[0156] (Technical Solution 2)

[0157] According to the semiconductor device of technical solution 1, the length of the sixth semiconductor region along the third direction is longer than the length of the third semiconductor region along the third direction.

[0158] (Technical Solution 3)

[0159] According to the semiconductor device of technical solution 2, the length of the sixth semiconductor region is more than 10 times and less than 500 times the length of the third semiconductor region.

[0160] (Technical Solution 4)

[0161] According to the semiconductor device of technical solution 2 or 3, the length of the sixth semiconductor region is longer than the length of the third electrode along the second direction.

[0162] (Technical Solution 5)

[0163] The semiconductor device according to any one of technical solutions 1 to 4, wherein,

[0164] The first wiring component further includes a first wiring connector.

[0165] The first wiring connection portion is disposed between the third electrode and the first extension portion.

[0166] The first wiring connection portion electrically connects the third electrode to the first extension portion.

[0167] (Technical Solution 6)

[0168] According to the semiconductor device of technical solution 5, the length of the first wiring connection portion along the third direction is longer than the length of the first wiring connection portion along the second direction.

[0169] (Technical Solution 7)

[0170] The semiconductor device according to any one of technical solutions 1 to 6, wherein,

[0171] The second electrode includes a second electrode planar portion and a second electrode connecting portion.

[0172] The second electrode connection portion extends along the third direction.

[0173] A portion of the second electrode connection portion is located between the second semiconductor region and the second electrode planar portion in the first direction.

[0174] The second electrode connection portion electrically connects the second semiconductor region to the second electrode surface portion.

[0175] (Technical Solution 8)

[0176] The semiconductor device according to any one of technical solutions 1 to 6, wherein,

[0177] The second electrode includes a second electrode planar portion and a second electrode connecting portion.

[0178] The second electrode connection portion extends along the third direction.

[0179] A portion of the second electrode connection is located in the first direction between the third semiconductor region and the second electrode planar portion.

[0180] Another portion of the second electrode connection is located between the sixth semiconductor region and the second electrode planar portion in the first direction.

[0181] The second electrode connection portion electrically connects the third semiconductor region to the second electrode surface portion, and the sixth semiconductor region to the second electrode surface portion.

[0182] (Technical Solution 9)

[0183] The semiconductor device according to any one of technical solutions 1 to 8, wherein a portion of the second semiconductor region is located between the sixth semiconductor region and the third semiconductor region.

[0184] (Technical Solution 10)

[0185] According to any one of technical solutions 1 to 9, in the semiconductor device, the impurity concentration of the first conductivity type in the sixth semiconductor region is more than 0.5 times and less than 2 times the impurity concentration of the first conductivity type in the third semiconductor region.

[0186] (Technical Solution 11)

[0187] The semiconductor device according to any one of technical solutions 1 to 10, wherein,

[0188] The semiconductor component further includes a seventh semiconductor region of the first conductivity type.

[0189] The seventh semiconductor region is disposed between the fourth semiconductor region and the first semiconductor region, and between the fifth semiconductor region and the first semiconductor region.

[0190] The impurity concentration of the first conductivity type in the seventh semiconductor region is higher than the impurity concentration of the first conductivity type in the first semiconductor region.

[0191] (Technical Solution 12)

[0192] The semiconductor device according to any one of technical solutions 1 to 11, wherein,

[0193] The semiconductor component includes a plurality of the third semiconductor regions and a plurality of the sixth semiconductor regions.

[0194] The portion of the third electrode is located in the second direction between one of the plurality of third semiconductor regions and another of the plurality of third semiconductor regions.

[0195] The other portion of the third electrode is located in the second direction between one of the plurality of sixth semiconductor regions and another of the plurality of sixth semiconductor regions.

[0196] (Technical Solution 13)

[0197] The semiconductor device according to any one of technical solutions 1 to 11, wherein,

[0198] The semiconductor component includes a plurality of the third semiconductor regions.

[0199] The direction from one of the plurality of third semiconductor regions to another of the plurality of third semiconductor regions is along the third direction.

[0200] At least a portion of the second semiconductor region is located, in the third direction, between one of the plurality of third semiconductor regions and another of the plurality of third semiconductor regions.

[0201] (Technical Solution 14)

[0202] The semiconductor device according to any one of technical solutions 1 to 13, wherein,

[0203] The insulating component further includes a second insulating region.

[0204] The second insulating region is disposed between the third electrode and the second electrode in the first direction.

[0205] (Technical Solution 15)

[0206] The semiconductor device according to any one of technical solutions 1 to 13, wherein,

[0207] It also includes a first conductive component extending along the third direction.

[0208] A portion of the first conductive component is located between a portion of the first semiconductor region and the second electrode.

[0209] Another portion of the first conductive component is located between another portion of the first semiconductor region and the first extension.

[0210] The first conductive component is electrically insulated from the first extension and electrically connected to the second electrode.

[0211] The third semiconductor region and the second semiconductor region are located between the third electrode and the first conductive component in the second direction.

[0212] (Technical Solution 16)

[0213] According to the semiconductor device of technical solution 15, wherein...

[0214] The second electrode also includes a first conductive component connection portion.

[0215] The first conductive component connection portion extends along the third direction.

[0216] The first conductive component connection portion is located between the first conductive component and the second electrode planar portion in the first direction.

[0217] The first conductive component connecting portion electrically connects the first conductive component to the second electrode surface portion.

[0218] (Technical Solution 17)

[0219] The semiconductor device according to any one of technical solutions 1 to 16, wherein at least a portion of the third semiconductor region, a portion of the sixth semiconductor region, and the second semiconductor region are in contact with the second electrode.

[0220] (Technical Solution 18)

[0221] A semiconductor device comprising:

[0222] First electrode;

[0223] The second electrode is located along the first direction from the first electrode toward the second electrode;

[0224] A first wiring component includes a first extension extending along a second direction intersecting the first direction, and a third direction from the first extension toward the second electrode intersecting a first plane including the first direction and the second direction.

[0225] The second wiring component includes a second extension extending along the second direction, and a third direction extending from the second extension toward the second electrode;

[0226] A third electrode extends along the third direction, a portion of the third electrode is located between the first electrode and the first extension, another portion of the third electrode is located between the first electrode and the second electrode, and the third electrode is electrically connected to the first extension;

[0227] A fourth electrode extends along the third direction, a portion of the fourth electrode is located between the first electrode and the second extension, another portion of the fourth electrode is located between the first electrode and the second electrode, the fourth electrode is electrically connected to the second extension, and the direction from the third electrode to the fourth electrode is along the second direction;

[0228] A semiconductor component is disposed in the first direction between the first electrode and the second electrode, between the first electrode and the first extension, and between the first electrode and the second extension, the semiconductor component comprising:

[0229] A first semiconductor region of a first conductivity type, the first semiconductor region comprising a first partial region, a second partial region, a third partial region and a fourth partial region, the first partial region being located between the first electrode and the third electrode in a first direction, the direction from the third electrode to the second partial region being along the second direction, the third partial region being located between the first electrode and the fourth electrode in the first direction, the direction from the fourth electrode to the fourth partial region being along the second direction;

[0230] The second semiconductor region of the second conductivity type is electrically connected to the second electrode, and extends along the second direction from the third electrode to the second semiconductor region and from the fourth electrode to the second semiconductor region.

[0231] The third semiconductor region of the first conductivity type is electrically connected to the second electrode, and a portion of the second semiconductor region is located between the second portion region and the third semiconductor region in the first direction, with the direction from the third electrode to at least a portion of the third semiconductor region along the second direction;

[0232] The fourth semiconductor region of the second conductivity type is disposed between the first electrode and the first semiconductor region;

[0233] The fifth semiconductor region of the first conductivity type is disposed between the first electrode and the first semiconductor region, and the direction from the fourth semiconductor region to the fifth semiconductor region intersects the first direction; and

[0234] A sixth semiconductor region of the first conductivity type is electrically connected to the second electrode, and at least a portion of the sixth semiconductor region is located between another portion of the second semiconductor region and the second extension; and

[0235] An insulating component, at least a portion of which is disposed between the third electrode and the semiconductor component, and between the fourth electrode and the semiconductor component.

[0236] (Technical Solution 19)

[0237] According to the semiconductor device of technical solution 18, the direction from the sixth semiconductor region to the third semiconductor region is inclined relative to the second direction and the third direction in a plane perpendicular to the first direction.

[0238] (Technical Solution 20)

[0239] A semiconductor module, comprising:

[0240] The semiconductor device described in technical solution 18 or 19; and

[0241] Control Department

[0242] The control unit is capable of applying a first signal to the first wiring component.

[0243] The control unit is capable of applying a second signal, different from the first signal, to the second wiring component.

[0244] According to the implementation method, a semiconductor device and semiconductor module capable of stabilizing characteristics can be provided.

[0245] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, any specific structure of the various elements included in a semiconductor device, such as electrodes, wiring components, semiconductor components, semiconductor regions, conductive components, and insulating components, is included within the scope of the present invention, provided that a person skilled in the art can appropriately select from the known scope to similarly implement the present invention and obtain the same effects.

[0246] Furthermore, any technical solution that combines any two or more elements of each specific example within a technically feasible range is included within the scope of this invention, as long as it contains the spirit of this invention.

[0247] Furthermore, as embodiments of the present invention, any semiconductor device and semiconductor module that can be appropriately designed and modified based on the above-described semiconductor device and semiconductor module, as long as it contains the spirit of the present invention, also falls within the scope of the present invention.

[0248] Furthermore, within the scope of the present invention, those skilled in the art will be able to conceive of various modifications and alterations, which also fall within the scope of the present invention.

[0249] Several embodiments of the present invention have been described, but these embodiments are provided by way of example and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included within the scope or spirit of the invention, and are included within the scope of the invention as described in the claims and its equivalents.

Claims

1. A semiconductor device comprising: First electrode; The second electrode is located along the first direction from the first electrode to the second electrode. A first wiring component includes a first extension extending along a second direction intersecting the first direction, and a third direction from the first extension to the second electrode intersecting a first plane including the first direction and the second direction. A third electrode extends along the third direction, a portion of the third electrode is located between the first electrode and the first extension, another portion of the third electrode is located between the first electrode and the second electrode, and the third electrode is electrically connected to the first extension; A semiconductor component is disposed in the first direction between the first electrode and the second electrode and between the first electrode and the first extension, the semiconductor component comprising: A first semiconductor region of a first conductivity type, the first semiconductor region comprising a first partial region and a second partial region, the first partial region being located between the first electrode and the third electrode in the first direction, and the direction from the third electrode to the second partial region being along the second direction; The second semiconductor region of the second conductivity type is electrically connected to the second electrode, and the direction from the third electrode to the second semiconductor region is along the second direction; The third semiconductor region of the first conductivity type is electrically connected to the second electrode, a portion of the second semiconductor region is located between the second portion region and the third semiconductor region in the first direction, and the direction from the third electrode to at least a portion of the third semiconductor region is along the second direction; The fourth semiconductor region of the second conductivity type is disposed between the first electrode and the first semiconductor region; The fifth semiconductor region of the first conductivity type is disposed between the first electrode and the first semiconductor region, and the direction from the fourth semiconductor region to the fifth semiconductor region intersects the first direction; and The sixth semiconductor region of the first conductivity type is electrically connected to the second electrode, and at least a portion of the sixth semiconductor region is located between another portion of the second semiconductor region and the first extension. as well as An insulating component includes a first insulating region disposed between the third electrode and the semiconductor component. The length of the sixth semiconductor region along the third direction is longer than the length of the third semiconductor region along the third direction.

2. The semiconductor device according to claim 1, wherein, The first wiring component further includes a first wiring connector. The first wiring connection portion is disposed between the third electrode and the first extension portion. The first wiring connection portion electrically connects the third electrode to the first extension portion.

3. The semiconductor device according to claim 1, wherein, The second electrode includes a second electrode planar portion and a second electrode connecting portion. The second electrode connection portion extends along the third direction. A portion of the second electrode connection portion is located between the second semiconductor region and the second electrode planar portion in the first direction. The second electrode connection portion electrically connects the second semiconductor region to the second electrode surface portion.

4. The semiconductor device according to claim 1, wherein, The second electrode includes a second electrode planar portion and a second electrode connecting portion. The second electrode connection portion extends along the third direction. A portion of the second electrode connection is located in the first direction between the third semiconductor region and the second electrode planar portion. Another portion of the second electrode connection is located between the sixth semiconductor region and the second electrode planar portion in the first direction. The second electrode connection portion electrically connects the third semiconductor region to the second electrode surface portion, and the sixth semiconductor region to the second electrode surface portion.

5. The semiconductor device according to claim 1, wherein, The semiconductor component further includes a seventh semiconductor region of the first conductivity type. The seventh semiconductor region is disposed between the fourth semiconductor region and the first semiconductor region, and between the fifth semiconductor region and the first semiconductor region. The impurity concentration of the first conductivity type in the seventh semiconductor region is higher than the impurity concentration of the first conductivity type in the first semiconductor region.

6. The semiconductor device according to claim 1, wherein, The semiconductor component includes a plurality of the third semiconductor regions. The direction from one of the plurality of third semiconductor regions to another of the plurality of third semiconductor regions is along the third direction. At least a portion of the second semiconductor region is located in the third direction between one of the plurality of third semiconductor regions and another of the third semiconductor regions.

7. The semiconductor device according to claim 1, wherein, The insulating component further includes a second insulating region. The second insulating region is disposed between the third electrode and the second electrode in the first direction.

8. The semiconductor device according to claim 1, wherein, It also includes a first conductive component extending along the third direction. A portion of the first conductive component is located between a portion of the first semiconductor region and the second electrode. Another portion of the first conductive component is located between another portion of the first semiconductor region and the first extension. The first conductive component is electrically insulated from the first extension and electrically connected to the second electrode. The third semiconductor region and the second semiconductor region are located between the third electrode and the first conductive component in the second direction.

9. A semiconductor device comprising: First electrode; The second electrode is located along the first direction from the first electrode to the second electrode. A first wiring component includes a first extension extending along a second direction intersecting the first direction, and a third direction from the first extension to the second electrode intersecting a first plane including the first direction and the second direction. The second wiring component includes a second extension extending along the second direction, and the direction from the second extension to the second electrode is along the third direction; A third electrode extends along the third direction, a portion of the third electrode is located between the first electrode and the first extension, another portion of the third electrode is located between the first electrode and the second electrode, and the third electrode is electrically connected to the first extension; A fourth electrode extends along the third direction, a portion of the fourth electrode is located between the first electrode and the second extension, another portion of the fourth electrode is located between the first electrode and the second electrode, the fourth electrode is electrically connected to the second extension, and the direction from the third electrode to the fourth electrode is along the second direction; A semiconductor component is disposed in the first direction between the first electrode and the second electrode, between the first electrode and the first extension, and between the first electrode and the second extension, the semiconductor component comprising: A first semiconductor region of a first conductivity type, the first semiconductor region comprising a first partial region, a second partial region, a third partial region and a fourth partial region, the first partial region being located between the first electrode and the third electrode in a first direction, the direction from the third electrode to the second partial region being along the second direction, the third partial region being located between the first electrode and the fourth electrode in the first direction, the direction from the fourth electrode to the fourth partial region being along the second direction; The second semiconductor region of the second conductivity type is electrically connected to the second electrode, and the direction from the third electrode to the second semiconductor region and the direction from the fourth electrode to the second semiconductor region are along the second direction; The third semiconductor region of the first conductivity type is electrically connected to the second electrode, a portion of the second semiconductor region is located between the second portion region and the third semiconductor region in the first direction, and the direction from the third electrode to at least a portion of the third semiconductor region is along the second direction; The fourth semiconductor region of the second conductivity type is disposed between the first electrode and the first semiconductor region; The fifth semiconductor region of the first conductivity type is disposed between the first electrode and the first semiconductor region, and the direction from the fourth semiconductor region to the fifth semiconductor region intersects the first direction; and The sixth semiconductor region of the first conductivity type is electrically connected to the second electrode, and at least a portion of the sixth semiconductor region is located between another portion of the second semiconductor region and the second extension. as well as An insulating component, at least a portion of which is disposed between the third electrode and the semiconductor component, and between the fourth electrode and the semiconductor component. The length of the sixth semiconductor region along the third direction is longer than the length of the third semiconductor region along the third direction.

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