一种LED芯片及制备方法
By employing an interdigitated conductive layer and an inclined sidewall design in the LED chip, the problems of uneven heat dissipation and current concentration caused by the concentration of N-type vias are solved, achieving more efficient heat dissipation and light emission, and extending the chip's lifespan.
CN115566123BActive Publication Date: 2026-07-17FOSHAN NATIONSTAR SEMICONDUCTOR CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- FOSHAN NATIONSTAR SEMICONDUCTOR CO LTD
- Filing Date
- 2022-10-25
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
In high-power flip-chip LEDs, the concentration of N-type vias in the middle of the chip leads to uneven heat dissipation, concentrated current and severe heat generation, which affects light output efficiency.
Method used
The design employs an interdigitated conductive layer and sloping sidewalls to electrically connect the N-type conductive layer to the edge region of the N-type gallium nitride layer, uniformly distributing N-type vias and reducing voltage.
Benefits of technology
This improves the heat dissipation and light emission efficiency of the chip, and extends the lifespan of the LED chip.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN115566123B_ABST
Abstract
本发明公开了一种LED芯片及制备方法，LED芯片包括衬底、发光结构层、P型导电层和N型导电层，P型导电层与N型导电层互不接触；P型导电层与N型导电层相向延伸形成相互配合的叉指结构；发光结构层包括N型氮化镓层，N型氮化镓层的部分裸露在发光结构的四周；N型导电层沿发光结构层的倾斜侧壁与N型氮化镓层连接；发光结构层设置有若干个N型通孔，N型导电层基于N型通孔与N型氮化镓层电性连接。LED芯片通过设置叉指状结构的导电层，使得N型通孔均匀分布，有效提高芯片散热效率，通过设置倾斜侧壁结构，改善N型氮化镓层四周电流分布，降低N型导电层和N型氮化镓层之间连接位置的电流电压，提高LED的出光效率。
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