Friction nanogenerator and application thereof

Abstract

The application relates to the technical field of energy collection, in particular to a friction nanogenerator and application thereof, to solve the problem that the existing friction nanogenerator cannot directly output direct current. The friction nanogenerator comprises a working electrode layer, a friction layer, a first current guide part and a second current guide part. The working electrode layer comprises a first surface and a second surface arranged oppositely. The first current guide part and the second current guide part are arranged on the first surface and are arranged at intervals. The friction layer is arranged on one side of the second surface and can generate relative motion with the second surface to generate induced charges on the working electrode layer. The potential of one of the first current guide part and the second current guide part is higher than the potential of the working electrode layer, and the potential of the other is lower than the potential of the working electrode layer, so that the electrons between the first current guide part, the working electrode layer and the second current guide part move directionally. The first current guide part and the second current guide part are used for outputting current.

Description

Technical Field

[0001] This application relates to the field of energy harvesting technology, and in particular to a triboelectric nanogenerator and its applications. Background Technology

[0002] With the rapid development of mobile internet and artificial intelligence technologies, trillions of miniaturized and highly integrated electronic products have received widespread attention in the field of human-computer interaction. Examples include in-situ monitoring and recording of human health or behavioral habits, and implantable medical diagnostics, which greatly promotes the connection between humans and the material world. These portable, distributed electronic products, which achieve the Internet of Things by acquiring massive amounts of data, not only rely on continuous external power supplies but also require power sources with characteristics such as portability, small size, and flexibility. Currently, triboelectric nanogenerators, as a novel distributed energy harvesting technology, can provide power to micro-electronic devices, while also offering advantages such as light weight, safety, a wide range of material choices, and simple manufacturing. However, based on the synergistic effect of triboelectric charging and electrostatic induction, most traditional triboelectric nanogenerators inherently possess the characteristic of pulsed AC output. This necessitates the use of external rectifier components to convert AC to DC in practical applications before they can continuously power most DC electronic devices. Integrating such rectifier components, which have a certain size and rigidity, into the circuit not only limits the future development of miniaturized and flexible electronic products but also consumes some of the energy of the triboelectric nanogenerator itself. Summary of the Invention

[0003] This application discloses a triboelectric nanogenerator and its application, in order to solve the problem that existing triboelectric nanogenerators cannot directly output direct current.

[0004] To achieve the above objectives, this application provides the following technical solution:

[0005] In a first aspect, this application provides a triboelectric nanogenerator, which includes a working electrode layer, a friction layer, a first current-conducting portion, and a second current-conducting portion. The working electrode layer includes a first surface and a second surface disposed opposite to each other. The first current-conducting portion and the second current-conducting portion are both disposed on the first surface and are spaced apart. The friction layer is disposed on one side of the second surface and is capable of relative movement with the second surface to generate induced charges in the working electrode layer. The potential of one of the first current-conducting portion and the second current-conducting portion is higher than the potential of the working electrode layer, and the potential of the other is lower than the potential of the working electrode layer, so as to cause directional movement of electrons between the first current-conducting portion, the working electrode layer, and the second current-conducting portion. The first current-conducting portion and the second current-conducting portion are used for current output.

[0006] Furthermore, the first current-conducting part is a P-type semiconductor layer or an N-type semiconductor layer, and the second current-conducting part is a P-type semiconductor layer or an N-type semiconductor layer, and the first current-conducting part and the second current-conducting part are different.

[0007] Furthermore, the first current-conducting section includes M layers of alternating and stacked P-type semiconductor layers and N-type semiconductor layers, with the P-type semiconductor layers connected to the first surface; the second current-conducting section includes L layers of alternating and stacked P-type semiconductor layers and N-type semiconductor layers, with the N-type semiconductor layers connected to the first surface; M and L are both integers greater than or equal to 2.

[0008] Furthermore, the first current-conducting portion includes an M-layer alternating and stacked first semiconductor layer and a metal layer, and the first semiconductor layer is connected to the first surface; the second current-conducting portion includes an L-layer alternating and stacked metal layer and a second semiconductor layer, and the metal layer is in contact with the first surface; the first semiconductor layer and the second semiconductor layer are both P-type semiconductor layers or N-type semiconductor layers; M and L are both integers greater than or equal to 2.

[0009] Furthermore, the P-type semiconductor layer is doped with metal particles or N-type semiconductor particles to form a heterojunction including multiple D / A interfaces; and / or, the N-type semiconductor layer is doped with metal particles or P-type semiconductor particles to form a heterojunction including multiple D / A interfaces.

[0010] Furthermore, the friction layer is made of polymer material.

[0011] Furthermore, the polymer material is selected from at least one of polytetrafluoroethylene, fluororubber, polyvinylidene fluoride, polyimide, polyethylene, silicone rubber, polystyrene, polyurethane rubber, cellulose, polypropylene, natural rubber, copy paper, nylon, acrylic, polyvinylidene fluoride, or perfluoroethylene-propylene copolymer.

[0012] Furthermore, the working electrode layer comprises an alloy consisting of one or at least two of the following: gold, silver, copper, aluminum, platinum, palladium, iridium, or iron.

[0013] Furthermore, both the first and second guide sections are obtained through planar printing.

[0014] Secondly, the application of a triboelectric nanogenerator of the first aspect in the fields of flexible sensors, flexible electronic skin, or human-computer interaction.

[0015] The beneficial effects of adopting the technical solution of this application are as follows:

[0016] The triboelectric nanogenerator provided in this application generates induced charges between its triboelectric layer and working electrode layer through friction when they move relative to each other. The potential of one of the first and second guiding parts is higher than that of the working electrode layer, and the potential of the other is lower than that of the working electrode layer. This causes electrons to move directionally between the first guiding part, the working electrode layer, and the second guiding part, i.e., from the high potential to the low potential. The first and second guiding parts can form a unidirectional electronic circuit when connected by a wire, thereby directly outputting DC power to external devices. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the structure of a triboelectric nanogenerator according to an embodiment of this application;

[0018] Figure 2 This is a schematic diagram of the structure of a triboelectric nanogenerator according to another embodiment of this application;

[0019] Figure 3 This is a schematic diagram of the structure of a triboelectric nanogenerator including a Schottky junction according to an embodiment of this application;

[0020] Figure 4 This is a schematic diagram of the structure of a triboelectric nanogenerator including a heterojunction according to an embodiment of this application;

[0021] Figure 5 This is a schematic diagram of a triboelectric nanogenerator including a heterojunction according to another embodiment of this application;

[0022] Figure 6 This is a DC signal diagram of the triboelectric nanogenerator in Embodiment 1 of this application.

[0023] Reference numerals: 100 - Friction layer; 200 - Working electrode layer; 300 - First guide section; 400 - Second guide section; 500 - External equipment;

[0024] 01-P-type semiconductor layer; 02-N-type semiconductor layer; 03-metal layer; 04-metal particle; 05-P-type semiconductor particle; 06-N-type semiconductor particle; 07-first semiconductor layer; 08-second semiconductor layer. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0026] The application scenarios described in this application are for the purpose of more clearly illustrating the technical solutions of this application, and do not constitute a limitation on the technical solutions provided in this application. Those skilled in the art will understand that with the emergence of new application scenarios, the technical solutions provided in this application are also applicable to similar technical problems. In the description of this application, unless otherwise stated, "multiple" means two or more.

[0027] Existing triboelectric nanogenerators typically require external rectifier electronic components to convert alternating current into direct current in order to power DC electronic devices, and cannot directly supply DC power to external devices.

[0028] In view of this, this application provides a triboelectric nanogenerator. Figure 1 This is a schematic diagram of the structure of a triboelectric nanogenerator according to an embodiment of this application, with reference to... Figure 1 The triboelectric nanogenerator includes a first flow guide 300, a second flow guide 400, a friction layer 100, and a working electrode layer 200 disposed on one side surface of the friction layer 100. The first flow guide 300 and the second flow guide 400 are respectively connected to the side surface of the working electrode layer 200 facing away from the friction layer 100, and the first flow guide 300 and the second flow guide 400 are spaced apart. The surface of the working electrode layer 200 connecting the first flow guide 300 and the second flow guide 400 is designated as the first surface, and the surface of the working electrode layer 200 facing away from the first surface is designated as the second surface. When the friction layer 100 and the second surface move relative to each other, the working electrode layer 200 generates induced charges. One of the first guiding portion 300 and the second guiding portion 400 has a higher potential than the working electrode layer 200, and the other has a lower potential, causing electrons to move directionally between the first guiding portion 300, the working electrode layer 200, and the second guiding portion 400. The first guiding portion 300 and the second guiding portion 400 are connected to an external device 500 via a wire, allowing direct current to be output to the external device 500. The relative movement between the friction layer 100 and the working electrode layer 200 includes contact separation or relative sliding.

[0029] Continue to refer to Figure 1The first current guiding section 300 includes M layers of alternating and stacked P-type semiconductor layer 01 and N-type semiconductor layer 02, and the P-type semiconductor layer 01 is connected to the first surface; the second current guiding section 400 includes L layers of alternating and stacked P-type semiconductor layer 01 and N-type semiconductor layer 02, and the N-type semiconductor layer 02 is connected to the first surface; M and L are both integers greater than or equal to 2. A PN junction is formed between the stacked P-type semiconductor layer 01 and N-type semiconductor layer 02. Since the P-type semiconductor layer 01 is in contact with the first surface in the first current-conducting section 300 and the N-type semiconductor layer 02 is in contact with the first surface in the second current-conducting section 400, the first current-conducting section 300 and the second current-conducting section 400 can form PN junctions with opposite directions. Under the action of the two PN junctions with opposite directions, when the working electrode layer 200 generates induced charge, its potential is between the potentials of the two PN junctions of the first current-conducting section 300 and the second current-conducting section 400. At this time, electrons in the working electrode layer 200 can form a unidirectional electron circuit under the action of the potential difference between the first current-conducting section 300 and the second current-conducting section 400.

[0030] Where M and L are both integers greater than or equal to 2, examples of M are 2, 3, 4, 5, 6, 7, 8, etc., and examples of L are 2, 3, 4, 5, 6, 7, 8, etc. M and L can be the same or different. In an optional embodiment, refer to... Figure 1 Both M and L are 2, meaning the first current-guiding section 300 includes two alternately arranged P-type semiconductor layers 01 and N-type semiconductor layers 02, with the P-type semiconductor layer 01 connected to the first surface; the second current-guiding section 400 includes two alternately arranged P-type semiconductor layers 01 and N-type semiconductor layers 02, with the N-type semiconductor layer 02 connected to the first surface. In another embodiment of this application, Figure 2 This is a schematic diagram of the structure of a triboelectric nanogenerator according to another embodiment of this application, with reference to... Figure 2 Both M and L are 4, meaning the first current-guiding section 300 includes four alternating P-type semiconductor layers 01 and N-type semiconductor layers 02, with the P-type semiconductor layer 01 connected to the first surface. In the direction from the second surface to the first surface, the first current-guiding section 300 includes P-type semiconductor layers 01, N-type semiconductor layers 02, P-type semiconductor layers 01, and N-type semiconductor layers 02. The second current-guiding section 400 also includes four alternating P-type semiconductor layers 01 and N-type semiconductor layers 02, with the N-type semiconductor layer 02 connected to the first surface. In the direction from the second surface to the first surface, the second current-guiding section 400 includes N-type semiconductor layers 02, P-type semiconductor layers 01, N-type semiconductor layers 02, and P-type semiconductor layers 01. When M or L is greater than 2, the first and second current-guiding sections of the triboelectric nanogenerator can form a multilayer PN junction, thereby amplifying the DC signal.

[0031] Figure 3This is a schematic diagram of a triboelectric nanogenerator including a Schottky junction according to an embodiment of this application, with reference to... Figure 3 The first current-guiding section 300 includes M alternating and stacked first semiconductor layer 07 and metal layer 03, with the first semiconductor layer 07 connected to the first surface; the second current-guiding section 400 includes L alternating and stacked metal layer 03 and second semiconductor layer 08, with the metal layer 03 in contact with the first surface; M and L are both integers greater than or equal to 2. In the first current-guiding section 300, a Schottky junction can be formed between the stacked first semiconductor layer 07 and metal layer 03; in the second current-guiding section 400, another Schottky junction can be formed between the stacked metal layer 03 and second semiconductor layer 08. The two Schottky junctions in the first current-guiding section 300 and the second current-guiding section 400 are oriented in opposite directions. When the working electrode layer 200 generates induced charge, its potential is between the potentials of the two Schottky junctions of the first current-conducting section 300 and the second current-conducting section 400. At this time, electrons in the working electrode layer 200 can form a unidirectional electron circuit between the first current-conducting section 300 and the second current-conducting section 400 under the action of the reverse Schottky junction.

[0032] In this context, M and L are both integers greater than or equal to 2. Examples of M include 2, 3, 4, 5, 6, 7, 8, etc., and examples of L include 2, 3, 4, 5, 6, 7, 8, etc. M and L can be the same or different. When M or L is greater than 2, the first and second current-carrying parts of the triboelectric nanogenerator can form a multilayer Schottky junction, thereby amplifying the DC signal.

[0033] The first semiconductor layer can be a P-type semiconductor layer or an N-type semiconductor layer, and the second semiconductor layer is a semiconductor material with the opposite polarity to the first semiconductor layer. That is, the first semiconductor layer is a P-type semiconductor layer and the second semiconductor layer is an N-type semiconductor layer; or the first semiconductor layer is an N-type semiconductor layer and the second semiconductor layer is a P-type semiconductor layer.

[0034] Figure 4 This is a schematic diagram of a triboelectric nanogenerator including a heterojunction according to an embodiment of this application. Figure 5 This is a schematic diagram of a triboelectric nanogenerator including a heterojunction according to another embodiment of this application, with reference to... Figure 4 and Figure 5 The first current-guiding part 300 is a P-type semiconductor layer 01 or an N-type semiconductor layer 02, and the second current-guiding part 400 is a P-type semiconductor layer 01 or an N-type semiconductor layer 02. The first current-guiding part 300 and the second current-guiding part 400 are different, that is, the first current-guiding part 300 is a P-type semiconductor layer 01 and the second current-guiding part 400 is an N-type semiconductor layer 02, or the first current-guiding part 300 is an N-type semiconductor layer 02 and the second current-guiding part 400 is a P-type semiconductor layer 01.

[0035] Continue to refer to Figure 4 and Figure 5 The P-type semiconductor layer 01 in the first current-conducting section 300 may be doped with metal particles 04 or N-type semiconductor particles 06 to form a heterojunction including multiple D / A (donor, abbreviated as D; acceptor, abbreviated as A) interfaces; and / or, the N-type semiconductor layer 02 in the second current-conducting section 400 may be doped with metal particles 04 or P-type semiconductor particles 05 to form a heterojunction including multiple D / A interfaces. The multiple D / A interfaces can amplify the DC signal of the external circuit.

[0036] In one embodiment of this application, the N-type semiconductor layer 02 in the first current-conducting portion 300 may be doped with metal particles 04 or P-type semiconductor particles 05 to form a heterojunction including multiple D / A interfaces; and / or, the P-type semiconductor layer 01 in the second current-conducting portion 400 may be doped with metal particles 04 or N-type semiconductor particles 06 to form a heterojunction including multiple D / A interfaces.

[0037] It is understood that any heterojunction in the first semiconductor layer and the second semiconductor layer that includes multiple D / A interfaces, or both of which include multiple D / A interfaces, are within the scope of protection of this application.

[0038] The above describes the specific structure of the triboelectric nanogenerator. The following section provides a detailed explanation of the constituent materials of each part of the triboelectric nanogenerator.

[0039] In one embodiment of this application, the friction layer is a polymer material. Preferably, the polymer material is an electret material that readily gains electrons. The electret material is a highly insulating dielectric material with a dipole orientation and a long-term polarized state, possessing excellent charge storage capabilities. Polymer materials include, but are not limited to, polytetrafluoroethylene, fluororubber, polyvinylidene fluoride, polyimide, polyethylene, silicone rubber, polystyrene, polyurethane rubber, cellulose, polypropylene, natural rubber, copy paper, nylon, acrylic, polyvinylidene fluoride, or perfluoroethylene-propylene copolymer.

[0040] In one embodiment of this application, the working electrode layer comprises an alloy of one or at least two of the following: gold, silver, copper, aluminum, platinum, palladium, iridium, or iron.

[0041] In this process, the friction layer and the working electrode layer can generate induced charges during their mutual movement, thereby changing the potential of the working electrode layer. Since the potential value of the working electrode layer is between the potential of the first current guide and the potential of the second current guide, electrons can move in a directional manner between the first current guide, the working electrode layer and the second current guide, thereby directly outputting DC power to external devices.

[0042] In one embodiment of this application, the metal particles may be selected from gold, silver, copper, aluminum, platinum, palladium, iridium, or iron. In one embodiment of this application, the P-type semiconductor layer may be a P-type organic semiconductor layer or a P-type inorganic semiconductor layer. In one embodiment of this application, the N-type semiconductor layer may be an N-type organic semiconductor layer or an N-type inorganic semiconductor layer. In one embodiment of this application, the semiconductor particles may be organic semiconductor particles or inorganic semiconductor particles, and the organic semiconductor particles include P-type organic semiconductor particles or N-type organic semiconductor particles.

[0043] The materials used in the P-type organic semiconductor layer or P-type organic semiconductor particles include, but are not limited to, poly(dimethyltriarylamine), polyaniline, polymers of 3-hexylthiophene, polydioxyethylthiophene, or 2,7-dihexyldithiophene[2,3-d:2',3'-d']benzo[1,2-b:4,5-b']dithiophene. The materials used in the N-type organic semiconductor layer or N-type organic semiconductor particles include, but are not limited to, perylenetetracarboxylic acid diimide, naphthyltetramethyldiimide, or molecules based on benzobisthiadiazole. The materials used in the inorganic semiconductor layer or inorganic semiconductor particles include, but are not limited to, titanium dioxide, zinc oxide, or molybdenum disulfide.

[0044] Existing triboelectric nanogenerators typically require external rectifier electronic components to convert alternating current into direct current. The rectifier electronic components, with their certain size and rigidity, limit the development of electronic products towards miniaturization and flexibility.

[0045] In view of this, the first and second flow guiding parts of the triboelectric nanogenerator in this embodiment are both obtained by planar printing, thereby obtaining an ultrathin and flexible ion layer. The thickness of both the first and second flow guiding parts is less than or equal to 1 mm. The thickness of the first and second flow guiding parts is typically, but not limited to, 1000 μm, 800 μm, 750 μm, 700 μm, 650 μm, 600 μm, 550 μm, 500 μm, 450 μm, 300 μm, 200 μm, 100 μm, 50 μm, 30 μm, 20 μm, 15 μm, or 10 μm.

[0046] It should be noted that the triboelectric nanogenerator in this application embodiment can be partially or entirely obtained through printing technology. For example, the first and second flow guiding parts are obtained through planar printing, while the friction layer and working electrode layer can be obtained through printing technology or fabricated using existing methods. Compared to a generator obtained partially through printing technology, the triboelectric nanogenerator obtained entirely through printing technology is thinner and its overall flexibility can be further improved. In practical applications, the triboelectric nanogenerator in this application can be fabricated partially or entirely through printing technology as needed.

[0047] Based on the same inventive concept, embodiments of this application provide an application of a triboelectric nanogenerator employing various possible implementations of this application in the fields of flexible sensors, flexible electronic skin, or human-computer interaction.

[0048] The triboelectric nanogenerator of this application will be further described in detail below with reference to specific embodiments and comparative examples.

[0049] Example 1

[0050] This embodiment is a triboelectric nanogenerator, as shown in the reference. Figure 1 The friction layer is a polytetrafluoroethylene (PTFE) film, and the working electrode layer is gold. The first guiding section comprises two stacked and alternately arranged P-type organic semiconductor layers composed of polyaniline and N-type organic semiconductor layers composed of naphthalenetetramethyldiimide, with the P-type organic semiconductor layer in contact with the first surface of the working electrode layer. The second guiding section comprises two stacked and alternately arranged P-type organic semiconductor layers composed of polyaniline and N-type organic semiconductor layers composed of naphthalenetetramethyldiimide, with the N-type organic semiconductor layer in contact with the first surface of the working electrode layer. The separation (or sliding) distance between the PTFE film and the working electrode layer is 2 mm, and the movement frequency is 1 Hz. Figure 6 This is a DC signal diagram of the triboelectric nanogenerator in Embodiment 1 of this application, with reference to... Figure 6 This triboelectric nanogenerator can directly output direct current.

[0051] Example 2

[0052] This embodiment is a triboelectric nanogenerator, as shown in the reference. Figure 3 The triboelectric nanogenerator has a friction layer of polytetrafluoroethylene (PTFE) film and a working electrode layer of gold. The first flow guiding section comprises two stacked and alternately arranged P-type organic semiconductor layers composed of polyaniline and an aluminum layer, with the P-type organic semiconductor layer in contact with the first surface of the working electrode layer. The second flow guiding section comprises two stacked and alternately arranged P-type organic semiconductor layers composed of polyaniline and an aluminum layer, with the aluminum layer in contact with the first surface of the working electrode layer. Under conditions where the separation (or sliding) distance between the PTFE film and the working electrode layer is 2 mm and the movement frequency is 1 Hz, the triboelectric nanogenerator outputs direct current.

[0053] Example 3

[0054] This embodiment is a triboelectric nanogenerator, as shown in the reference. Figure 4The triboelectric nanogenerator has a friction layer of polytetrafluoroethylene (PTFE) film and a working electrode layer of gold. The first current-conducting section is a P-type organic semiconductor layer composed of polyaniline, in which gold particles are doped; the second current-conducting section is an N-type organic semiconductor layer composed of naphthalenetetramethyldiimide, also in which gold particles are doped. Under conditions where the separation (or sliding) distance between the PTFE film and the working electrode layer is 2 mm and the movement frequency is 1 Hz, the triboelectric nanogenerator outputs direct current.

[0055] Example 4

[0056] This embodiment is a triboelectric nanogenerator, as shown in the reference. Figure 5 The triboelectric nanogenerator has a friction layer of polytetrafluoroethylene (PTFE) film and a working electrode layer of gold. The first current-conducting section includes a P-type organic semiconductor layer composed of polyaniline, in which titanium dioxide (TiO2) particles are doped. The second current-conducting section includes an N-type organic semiconductor layer composed of tetramethylimine naphthalene, in which cobalt tetroxide (Co3O4) particles are doped. Under conditions where the separation (or sliding) distance between the PTFE film and the working electrode layer is 2 mm and the movement frequency is 1 Hz, the triboelectric nanogenerator outputs direct current.

[0057] Example 5

[0058] This embodiment is a triboelectric nanogenerator. The specific structure is the same as that in embodiment 1. The difference between embodiment 5 and embodiment 1 is that the first and second current-guiding parts in embodiment 1 are integrated with diode electronic components, while the first and second current-guiding parts in embodiment 5 are obtained by planar printing. This triboelectric nanogenerator outputs direct current.

[0059] The above are merely specific embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A triboelectric nanogenerator, characterized in that, It includes a working electrode layer, a friction layer, a first guide portion, and a second guide portion, wherein, The working electrode layer includes a first surface and a second surface disposed opposite to each other; Both the first flow guide portion and the second flow guide portion are disposed on the first surface, and the first flow guide portion and the second flow guide portion are disposed at intervals; The friction layer is disposed on one side of the second surface and is capable of relative movement with the second surface to generate induced charge in the working electrode layer; the potential of one of the first and second guiding portions is higher than the potential of the working electrode layer, and the potential of the other is lower than the potential of the working electrode layer, so as to cause directional movement of electrons between the first guiding portion, the working electrode layer and the second guiding portion. The first current guide and the second current guide are used for current output; The first flow guide includes M layers of alternating and stacked P-type semiconductor layers and N-type semiconductor layers, and the P-type semiconductor layer is connected to the first surface; The second flow guide includes alternating and stacked P-type semiconductor layers and N-type semiconductor layers, and the N-type semiconductor layer is connected to the first surface; Both M and L are integers greater than or equal to 2.

2. A triboelectric nanogenerator, characterized in that, It includes a working electrode layer, a friction layer, a first guide portion, and a second guide portion, wherein, The working electrode layer includes a first surface and a second surface disposed opposite to each other; Both the first flow guide portion and the second flow guide portion are disposed on the first surface, and the first flow guide portion and the second flow guide portion are disposed at intervals; The friction layer is disposed on one side of the second surface and is capable of relative movement with the second surface to generate induced charge in the working electrode layer; the potential of one of the first and second guiding portions is higher than the potential of the working electrode layer, and the potential of the other is lower than the potential of the working electrode layer, so as to cause directional movement of electrons between the first guiding portion, the working electrode layer and the second guiding portion. The first current guide and the second current guide are used for current output; The first flow guide includes M alternating and stacked first semiconductor layers and metal layers, and the first semiconductor layer is connected to the first surface; The second flow guide includes L layers of alternating and stacked metal layers and a second semiconductor layer, wherein the metal layers are in contact with the first surface; Both the first semiconductor layer and the second semiconductor layer are P-type semiconductor layers or N-type semiconductor layers; Both M and L are integers greater than or equal to 2.

3. The triboelectric nanogenerator according to claim 1 or 2, characterized in that, The P-type semiconductor layer is doped with metal particles or N-type semiconductor particles to form a heterojunction including multiple D / A interfaces; and / or, The N-type semiconductor layer is doped with metal particles or P-type semiconductor particles to form a heterojunction including multiple D / A interfaces.

4. A triboelectric nanogenerator, characterized in that, It includes a working electrode layer, a friction layer, a first guide portion, and a second guide portion, wherein, The working electrode layer includes a first surface and a second surface disposed opposite to each other; Both the first flow guide portion and the second flow guide portion are disposed on the first surface, and the first flow guide portion and the second flow guide portion are disposed at intervals; The friction layer is disposed on one side of the second surface and is capable of relative movement with the second surface to generate induced charge in the working electrode layer; the potential of one of the first and second guiding portions is higher than the potential of the working electrode layer, and the potential of the other is lower than the potential of the working electrode layer, so as to cause directional movement of electrons between the first guiding portion, the working electrode layer and the second guiding portion. The first current guide and the second current guide are used for current output; The first current-guiding part is a P-type semiconductor layer or an N-type semiconductor layer, and the second current-guiding part is a P-type semiconductor layer or an N-type semiconductor layer. The first current-guiding part and the second current-guiding part are different. The P-type semiconductor layer is doped with metal particles or N-type semiconductor particles to form a heterojunction including multiple D / A interfaces; and / or, The N-type semiconductor layer is doped with metal particles or P-type semiconductor particles to form a heterojunction including multiple D / A interfaces.

5. The triboelectric nanogenerator according to claim 1, 2, or 4, characterized in that, The friction layer is a polymer material.

6. The triboelectric nanogenerator according to claim 5, characterized in that, The polymer material is selected from at least one of polytetrafluoroethylene, fluororubber, polyvinylidene fluoride, polyimide, polyethylene, silicone rubber, polystyrene, polyurethane rubber, cellulose, polypropylene, natural rubber, copy paper, nylon, acrylic, polyvinylidene fluoride, or perfluoroethylene-propylene copolymer.

7. The triboelectric nanogenerator according to claim 1, 2, or 4, characterized in that, The working electrode layer comprises an alloy consisting of one or at least two of the following: gold, silver, copper, aluminum, platinum, palladium, iridium, or iron.

8. The triboelectric nanogenerator according to claim 1, 2, or 4, characterized in that, Both the first and second flow guides are obtained by planar printing.

9. An application of a triboelectric nanogenerator as described in claim 1, 2 or 4 in the fields of flexible sensors, flexible electronic skin or human-computer interaction.

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