控制存储器中的氢供应的设备和方法
By setting a combined structure of hydrogen supply membrane and hydrogen barrier membrane on the memory cell, the problem of uneven hydrogen distribution caused by high-temperature annealing is solved, thereby reducing leakage current and improving data reliability.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- MICRON TECHNOLOGY INC
- Filing Date
- 2022-07-01
- Publication Date
- 2026-07-17
AI Technical Summary
In semiconductor memories, the hydrogen supply caused by the high-temperature annealing process affects the transistor characteristics in the FEOL and the leakage current of the compensation capacitor in the BEOL, leading to errors and failures in memory cells. Furthermore, existing hydrogen supply methods are difficult to effectively control the distribution of hydrogen.
A combined structure of a hydrogen supply membrane and a hydrogen barrier membrane is set above the memory cell. The hydrogen supply membrane releases hydrogen or hydrogen ions at low temperature, and the hydrogen barrier membrane blocks the migration of hydrogen or hydrogen ions, forming a barrier layer to control the distribution of hydrogen.
It effectively reduces leakage current in memory cells, improves data reliability and refresh rate, and avoids the impact of high-temperature annealing on transistor characteristics.
Smart Images
Figure CN115568214B_ABST