Light emitting diode with improved brightness and method of manufacturing the same
By designing a zigzag-shaped epitaxial layer sidewall in the light-emitting diode (LED), the light reflected from the sidewall is returned to the light-emitting surface, thus solving the brightness loss problem caused by side light emission and improving the brightness and light utilization efficiency of the LED.
CN115579436BActive Publication Date: 2026-06-12HC SEMITEK (SUZHOU) CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HC SEMITEK (SUZHOU) CO LTD
- Filing Date
- 2022-09-30
- Publication Date
- 2026-06-12
AI Technical Summary
⚠Technical Problem
In existing light-emitting diodes, side-emitting light results in brightness loss and low light utilization efficiency.
⚗Method used
The sidewalls of the epitaxial layer are designed as zigzag lines with a cross section perpendicular to the bearing surface. The zigzag structure is formed by etching a composite adhesive layer, and the light from the sidewalls is reflected back to the light surface by the zigzag lines.
🎯Benefits of technology
This improves the brightness of the LED, reduces side light emission, and enhances light utilization efficiency.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN115579436B_ABST
Abstract
The present disclosure provides a light emitting diode with improved brightness and a preparation method thereof, and belongs to the technical field of optoelectronic manufacturing. The light emitting diode comprises a substrate and an epitaxial layer on a bearing surface of the substrate; the cross section of the side wall of the epitaxial layer is a broken line, and the cross section is perpendicular to the bearing surface. The present disclosure can reduce the side light emission of the light emitting diode and improve the brightness.
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