一种隧穿型忆阻器及其制备方法和应用
By introducing an active metal-doped silicon oxide percolation layer into a tunneling memristor, the problems of cyclic fluctuations in conductive filament memristors and slow migration speed and depolarization in tunneling memristors are solved, achieving memristor performance with high stability, fast switching and long data retention, suitable for information storage and neuromorphic computing.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- GUANGZHOU UNIVERSITY
- Filing Date
- 2022-09-14
- Publication Date
- 2026-07-17
AI Technical Summary
Existing conductive filament memristors suffer from large cyclic variability due to random growth and fracture in the resistive switching layer. They have fast switching speeds but poor stability. Meanwhile, tunneling memristors suffer from slow oxygen vacancy migration and depolarization issues, resulting in slow switching speeds and short data retention times. It is difficult to achieve low cyclic variability, high switching speed, long data retention time, and continuous conductance adjustment simultaneously on a single memristor.
The tunneling memristor employs a top-down structure, comprising a top electrode, a percolation layer, and a bottom electrode. The percolation layer is an active metal-doped silicon oxide layer with a thickness of 70-150 nm, while the tunneling layer is SiOx or TiOx with a thickness of 3.5-4.5 nm. It is fabricated using a combination of reactive co-sputtering and thermal evaporation processes. The active metal-doped silicon oxide layer provides active metal clusters with low activation energy and fast migration speed to regulate the potential barrier of the tunneling layer.
It achieves high cyclic stability, fast switching speed and long data retention time, while also having continuous conductivity regulation capability, making it suitable for information storage devices and neuromorphic computing hardware.
Smart Images
Figure CN115589772B_ABST