Topological structure optimization method, device and equipment of complex phase material and storage medium
Patent Information
- Application Number
- CN202211160510.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-09-22
- Publication Date
- 2026-08-28
- Estimated Expiration
- 2042-09-22
AI Technical Summary
[0005]本申请提供一种复相材料的拓扑结构优化方法、装置、电子设备及存储介质,以解决 相关技术中复相材料的界面通常是水平集函数没有确定的界面特性,导致复相材料的拓扑 优化在工程应用中通常具有一定的局限性等问题
[0024](1)本申请实施例基于界面材料特性实现相材料的拓扑结构优化,通过考虑界面性能 使复相材料的拓扑优化,达到优化复相材料的拓扑结构的目的,避免工程应用中的局限性, 有效提升拓扑优化的适用性和实用性。
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Abstract
Description
Technical Field
[0001] This application relates to the field of multiphase material design technology, and in particular to a method, apparatus, device and storage medium for optimizing the topology of multiphase materials. Background Technology
[0002] Multiphase materials are composed of two or more materials. Compared with single-phase materials, they usually have superior properties such as high strength, high wear resistance and lightweight. Therefore, multiphase materials have wide applicability in aerospace, vehicle machinery, aircraft and advanced weaponry.
[0003] In engineering applications, commonly used structural design methods include size optimization, shape optimization, and topology optimization. Among them, topology optimization is a structural optimization design method with the highest degree of design freedom. It aims to rationally allocate materials with different properties in a specified spatial domain to achieve optimal performance.
[0004] However, in topology optimization using the level set method in related technologies, the interface of complex materials usually lacks definite interface characteristics in the level set function, which leads to certain limitations in the engineering application of topology optimization for complex materials. Summary of the Invention
[0005] This application provides a method, apparatus, electronic device, and storage medium for optimizing the topology of complex materials, in order to solve the problem that the interface of complex materials is usually characterized by the lack of definite interface properties of the level set function, which leads to certain limitations in the engineering application of topology optimization of complex materials.
[0006] The first aspect of this application provides a method for optimizing the topology of a multiphase material, comprising the following steps: identifying the actual material domain in which the target multiphase material is located; dividing the target multiphase material into multiple grid cells based on the actual material domain in which the target multiphase material is located and the actual material domain in which the interface material is located, and calculating the stress-strain field of each grid cell; calculating the design sensitivity of each grid cell based on the stress-strain field, and replacing the solid material of each grid cell based on the design sensitivity until the flexibility and volume change values of the corresponding solid region of each grid cell before and after replacement reach a preset threshold; and optimizing the topology of the target multiphase material based on the design sensitivity that makes the flexibility and volume change values reach the preset threshold.
[0007] Based on the above-mentioned technical means, the embodiments of this application realize the topology optimization of phase materials based on the characteristics of interface materials. By considering the interface performance, the topology of the complex phase material is optimized, thereby achieving the purpose of optimizing the topology of the complex phase material, avoiding the limitations in engineering applications, and effectively improving the applicability and practicality of topology optimization.
[0008] Further, identifying the actual material domain of the interface material of the target multiphase material includes: obtaining the level set function of the target multiphase material, wherein the equipotential surface of the level set function divides the material domain into material domains with different properties; identifying the zero equipotential surface of the level set function, determining the actual interface characteristics of the zero equipotential surface based on the level set function, and matching the actual material domain of the interface material based on the actual interface characteristics.
[0009] Based on the above technical means, the embodiments of this application divide the material domain into material domains with different properties by using the equipotential surface of the level set function, and use the distance function to determine the actual interface characteristics such as the boundary thickness of the zero equipotential surface of the level set function, so as to ensure that the interface properties of the optimal structure are taken into account.
[0010] Further, the step of calculating the design sensitivity of each grid cell based on the stress-strain field includes: calculating the actual material ratio of the target multiphase material and the interface material; assigning the material properties of the target multiphase material and the interface material to each grid cell through an elastic matrix according to the actual material ratio; and calculating the design sensitivity of each grid cell based on the elastic matrix of each grid cell and the stress-strain field.
[0011] Based on the above technical means, the embodiments of this application calculate the actual material ratio of the multiphase material and the interface material, and then assign material properties such as the elastic modulus and Poisson's ratio to the grid cells in the form of an elastic matrix according to the material distribution. The design sensitivity of each grid cell is calculated based on the elastic matrix and stress-strain field of each grid cell to evaluate the mechanical properties of the multiphase material structure.
[0012] Furthermore, optimizing the topology of the target multiphase material based on the design sensitivity corresponding to the compromise and volume change values reaching a preset threshold includes: updating the level set function of the target multiphase material based on the design sensitivity; obtaining the material distribution of the target multiphase material based on the updated level set function; and optimizing the topology of the target multiphase material based on the material distribution.
[0013] Based on the above technical means, the embodiments of this application optimize the topology of the complex material by designing the sensitivity update level set function of the complex material and obtaining the new material distribution in the region.
[0014] Furthermore, the formula for calculating the stress-strain field is as follows:
[0015]
[0016] Where u is the stress-strain field, v is the test function, and Γt is the boundary of the load acting on the target multiphase material.
[0017] A second aspect of this application provides a topology optimization device for a multiphase material, comprising: an identification module for identifying the actual material domain in which the target multiphase material is located; a calculation module for dividing the target multiphase material into multiple grid cells based on the actual material domain in which the target multiphase material is located and the actual material domain in which the interface material is located, and calculating the stress-strain field of each grid cell; and a replacement module for calculating the design sensitivity of each grid cell based on the stress-strain field, and replacing the solid material of each grid cell based on the design sensitivity until the flexibility and volume change values of the corresponding solid region of each grid cell before and after replacement reach a preset threshold, and optimizing the topology of the target multiphase material based on the design sensitivity that makes the flexibility and volume change values reach the preset threshold.
[0018] Furthermore, the identification module is used to: obtain the level set function of the target multiphase material, wherein the equipotential surface of the level set function divides the material domain into material domains with different properties; identify the zero equipotential surface of the level set function, determine the actual interface characteristics of the zero equipotential surface according to the level set function, and match the actual material domain in which the interface material is located according to the actual interface characteristics.
[0019] Furthermore, the calculation module is used to: calculate the actual material ratio of the target multiphase material and the interface material; assign the material properties of the target multiphase material and the interface material to each grid cell through an elastic matrix according to the actual material ratio; and calculate the design sensitivity of each grid cell based on the elastic matrix of each grid cell and the stress-strain field.
[0020] Furthermore, the replacement module is used to: update the level set function of the target multiphase material according to the design sensitivity; obtain the material distribution of the target multiphase material according to the updated level set function; and optimize the topology of the target multiphase material based on the material distribution.
[0021] A third aspect of this application provides an electronic device, including: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the program to implement the topology optimization method for multiphase materials as described in the above embodiments.
[0022] A fourth aspect of this application provides a computer-readable storage medium having a computer program stored thereon, which is executed by a processor to implement the method for optimizing the topology of multiphase materials as described in the above embodiments.
[0023] Therefore, this application has at least the following beneficial effects:
[0024] (1) The embodiments of this application realize the topology optimization of phase materials based on the properties of interface materials. By considering the interface performance, the topology of the complex phase material is optimized, thereby achieving the purpose of optimizing the topology of the complex phase material, avoiding the limitations in engineering applications, and effectively improving the applicability and practicality of topology optimization.
[0025] (2) In this embodiment, the material domain is divided into different property material domains by the equipotential surface of the level set function, and the actual interface characteristics of the zero equipotential surface of the level set function are determined by the level set function, so as to ensure that the interface properties of the optimal structure are considered.
[0026] (3) In this embodiment, the actual material ratio of the multiphase material and the interface material is calculated, and then the material properties such as the elastic modulus and Poisson's ratio are assigned to the grid unit in the form of an elastic matrix according to the material distribution. The design sensitivity of each grid unit is calculated based on the elastic matrix and stress-strain field of each grid unit to evaluate the mechanical properties of the multiphase material structure.
[0027] (4) In this embodiment of the application, the level set function of the composite material is updated by designing sensitivity, and a new material distribution in the region is obtained to optimize the topology of the composite material.
[0028] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description
[0029] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein:
[0030] Figure 1 This is a flowchart of a method for optimizing the topology of multiphase materials according to an embodiment of this application;
[0031] Figure 2 This is a flowchart illustrating the topology optimization method for multiphase materials according to an embodiment of this application.
[0032] Figure 3 This is a diagram of the design area to be optimized according to the topology optimization method for multiphase materials based on embodiments of this application;
[0033] Figure 4 This is a topology optimization result diagram of the topology optimization method for multiphase materials according to an embodiment of this application;
[0034] Figure 5 This is a topology optimization iteration history diagram of the topology optimization method for multiphase materials according to embodiments of this application;
[0035] Figure 6This is an example diagram of a topology optimization apparatus for multiphase materials according to an embodiment of this application;
[0036] Figure 7 This is a schematic diagram of the structure of an electronic device according to an embodiment of this application. Detailed Implementation
[0037] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this application, and should not be construed as limiting this application.
[0038] Multiphase materials are composed of two or more materials. Compared with single-phase materials, they usually have superior properties such as high strength, high wear resistance and lightweight. Therefore, multiphase materials have wide applicability in aerospace, vehicle machinery, aircraft and advanced weaponry. In recent years, with the emergence of 3D printing technology, the structure of multiphase materials has attracted much attention in engineering applications.
[0039] In engineering applications, commonly used structural design methods include size optimization, shape optimization, and topology optimization. Among them, topology optimization is a structural optimization design method with the highest degree of design freedom. It aims to rationally allocate materials with different properties in a specified spatial domain to achieve optimal performance. In the topology optimization of multiphase materials, multiple level set functions are used to represent different materials and the boundaries between them. By updating multiple level set functions, the optimized topological shape can be obtained.
[0040] In typical topology optimization using the level set method, the interface of a multiphase material is usually an equipotential surface with no thickness, determined by the level set function. However, in engineering applications, the interface thickness of multiphase materials varies depending on the bonding method. Therefore, ignoring the material interface thickness and its corresponding properties will limit the topology optimization of multiphase materials in engineering applications.
[0041] The following description, with reference to the accompanying drawings, outlines a method, apparatus, electronic device, and storage medium for optimizing the topology of multiphase materials according to embodiments of this application. Specifically, Figure 1 This is a flowchart illustrating a method for optimizing the topology of a multiphase material, as provided in an embodiment of this application.
[0042] like Figure 1 As shown, the method for optimizing the topology of this multiphase material includes the following steps:
[0043] In step S101, the actual material domain in which the target multiphase material is located is identified.
[0044] In the field of practical materials, this can be either new energy materials or nanomaterials, depending on the specific circumstances.
[0045] It is understood that the embodiments of this application identify the actual material domain of the target multiphase material and its interface material, and determine the properties and interface characteristics of the multiphase material in order to facilitate its reasonable division and allocation in the future.
[0046] In this embodiment of the application, identifying the actual material domain of the interface material of the target multiphase material includes: obtaining the level set function of the target multiphase material, wherein the equipotential surface of the level set function divides the material domain into material domains with different properties; identifying the zero equipotential surface of the level set function, determining the actual interface characteristics of the zero equipotential surface based on the level set function, and matching the actual material domain of the interface material based on the actual interface characteristics.
[0047] Among them, a zero equipotential surface can be an equipotential surface in which every point in a certain region of space is equipotentially zero.
[0048] The actual interface characteristics can be the actual characteristics at the interface between two or more materials in a multiphase material.
[0049] It is understood that, in the embodiments of this application, the multiphase material is divided into material domains with different properties by using a level set function, and the actual interface characteristics are matched with the actual material domains based on the distance function, so as to determine the actual material domain in which the multiphase material is located.
[0050] Specifically, the determination of the material domain and interface domain based on the level set function is as follows:
[0051]
[0052]
[0053]
[0054] In the formula, φ(x) is the level set function, and D is the design domain. This represents the material boundary.
[0055] In step S102, the mesh is divided based on the actual material domain of the target multiphase material and the actual material domain of the interface material to obtain multiple mesh elements, and the stress-strain field of each mesh element is calculated.
[0056] It is understood that, in the embodiments of this application, the actual material domain in which the multiphase material and the interface material are located is divided into grids, and the stress-strain field of each grid cell is calculated to evaluate the mechanical properties of the multiphase material structure.
[0057] Specifically, the formula for calculating the stress-strain field can be:
[0058]
[0059] Where u is the stress-strain field, v is the test function, and Γt is the boundary of the load acting on the target multiphase material.
[0060] In step S103, the design sensitivity of each grid cell is calculated based on the stress-strain field, and the solid material of each grid cell is replaced according to the design sensitivity until the flexibility and volume change values of the corresponding solid region of each grid cell before and after replacement reach a preset threshold. Then, the topology of the target multiphase material is optimized according to the design sensitivity that makes the flexibility and volume change values reach the preset threshold.
[0061] The preset threshold can be a value set by the user in advance, or it can be the average value of the change in flexibility and volume; no specific limitation is made here.
[0062] It is understood that the embodiments of this application can calculate the design sensitivity of each grid cell through the stress-strain field, and replace the solid material in the grid cell according to the design sensitivity until the compliance and volume change values after replacement reach the design sensitivity corresponding to the preset threshold, so as to output the topology of the optimal target multiphase material, making it unrestricted in engineering applications and applicable to all mechanical structures subjected to loads.
[0063] In this embodiment, the design sensitivity of each grid cell is calculated based on the stress-strain field, including: calculating the actual material ratio of the target complex phase material and the interface material; assigning the material properties of the target complex phase material and the interface material to each grid cell through an elastic matrix according to the actual material ratio; and calculating the design sensitivity of each grid cell based on the elastic matrix and the stress-strain field of each grid cell.
[0064] The actual material proportion can be the proportion of the target multiphase material and the interface material in the whole material.
[0065] It is understood that, in this embodiment of the application, the actual material ratio of the target multiphase material and the interface material is calculated, and the material properties of the target multiphase material and the interface material are assigned to each grid cell through an elastic matrix, thereby making it easier and faster to calculate the design sensitivity of each grid cell.
[0066] Specifically, the formula for calculating the design sensitivity of a grid cell is:
[0067]
[0068] In the formula, This is the normalized objective equation. In this embodiment, the objective equation F is defined as:
[0069]
[0070] Among them, the RDE equation, a reference diffusion equation, is used to replace physical materials using design sensitivity.
[0071] In this embodiment, optimizing the topology of the target multiphase material based on the design sensitivity corresponding to the set threshold of the flexibility and volume change values includes: updating the level set function of the target multiphase material based on the design sensitivity; obtaining the material distribution of the target multiphase material based on the updated level set function; and optimizing the topology of the target multiphase material based on the material distribution.
[0072] It is understood that, in the embodiments of this application, a new material distribution in the region can be obtained through the updated level set function, thereby optimizing the topology of the multiphase material.
[0073] The topology optimization method for multiphase materials proposed in this application identifies the material domains of the multiphase material and the interface material through a level set function. Based on the identified material domains, a mesh is generated, the stress-strain field is calculated, and the design sensitivity of each mesh element is calculated using the elasticity matrix of the mesh element. The solid material in each mesh element is replaced based on the design sensitivity of the material. A new material distribution in the region is obtained through the updated level set function. Finally, the compliance and volume changes of the solid region before the current material iteration are calculated, and it is determined whether the compliance and volume changes both meet preset thresholds. If so, the level set function under the current iteration is output as the optimal structure, achieving the goal of outputting the optimal topology of the multiphase material. This method is feasible and compatible in engineering applications, applicable to all mechanical structures subjected to loads. Therefore, it solves the technical problem in related technologies where the interface of multiphase materials is usually determined by the level set function without considering the interface, leading to limitations in the engineering application of topology optimization for multiphase materials.
[0074] The following will be based on Figure 2 The flowchart shown illustrates the method for optimizing the topology of multiphase materials, including the following steps:
[0075] S1 defines the actual material domain of complex phase materials and interface materials through the level set function;
[0076] S2 introduces a distance function and defines the specified thickness region next to the smooth interface of the complex phase material as the interface region of the interface material.
[0077] S3. Mesh the complex phase material according to the defined interface region, and assign the material properties to the mesh in the form of an elastic matrix according to the distribution regions of the complex phase material and the interface material. Finally, calculate and analyze the displacement field and stress-strain field of the structure according to the boundary values of the defined displacement field.
[0078] S4. Based on the stress-strain field calculated in S3, the design sensitivity of each grid cell is calculated using the elastic matrix of the grid cell. The design sensitivity of each grid cell in the solid region of the multiphase material to be optimized is used to replace the solid material in the grid cell. The iterative level set function is updated using the diffusion equation RDE. The new material distribution in the region can be obtained through the updated level set function.
[0079] S5, calculate the flexibility and volume changes of the entity region in the current iteration and before this iteration, and determine whether the flexibility and volume changes both meet the preset thresholds. If so, output the level set function under the current iteration as the optimal structure; otherwise, return to S3.
[0080] Based on the above topology optimization flowchart, the following will combine... Figure 3 , Figure 4 and Figure 5 The optimization of the topology of multiphase materials is described in detail, with the optimization problem of maximizing the stiffness of a structure under concentrated load as an example, as follows:
[0081] like Figure 3 For the complex material shown, given a design domain of 2m × 1m, with the left side of the domain fixed and a concentrated downward load applied to the center of the right side, the volume of the material with higher mechanical strength constrained by this structural design is defined as: Vmax < 50%. Based on the horizontal set function and the distance function, the signs of the complex material domain and the interface material domain are determined as follows:
[0082]
[0083]
[0084]
[0085] like Figure 4 As shown in (a), based on the material properties used in the structure, the design domain is occupied by materials 1 and 2 in equal proportions, and a boundary material of a certain thickness is distributed between the multiphase materials, such as... Figure 4 (b) shows that the structure reflects which regions should be occupied by the first material, which regions are suitable to be occupied by the second material, and the regions between the two materials are distributed with interface material.
[0086] In this embodiment, the elastic modulus and Poisson's ratio of the first material are set to 400 GPa and 0.4, respectively; the elastic modulus and Poisson's ratio of the second material are set to 200 GPa and 0.35, respectively; it is assumed that the elastic modulus and Poisson's ratio of the interface material used to occupy the interface region are 400 GPa and 0.4, respectively; the structural performance analysis problem is performed according to the boundary value problem, and the overall displacement vector of the design domain is obtained, where t is the external force vector of the design domain.
[0087] The external force vector in the embodiments of this application is as follows: Figure 3 The diagram shows a concentrated load of 1 MPa applied vertically downwards at the midpoint of the right side of the design domain. By solving the boundary value problem, the displacement field vector of the current structure can be obtained, and the design sensitivity of each element can be calculated using the displacement field. Combining the design sensitivity, the iterative level set function is updated using the diffusion equation RDE. Therefore, the distribution of multiphase materials in the design domain is updated according to the definition. The convergence criteria are then used to determine whether the optimization results meet the convergence conditions. In this embodiment, the convergence criteria are as follows:
[0088] |∫ Γt t·u k+1 dΓ-∫ Γt t·u k dΓ|≤∫ Γt ·u k dΓ×ε
[0089] In the formula, ε = 1e-2. Based on the design requirement that the maximum usage ratio of high-strength materials is 50%, when the stiffness and volume changes meet the convergence requirements, the result of the current iteration calculation is output as the optimal result; otherwise, the steps of finite element analysis and structural update are repeated until the convergence condition is met. Figure 5 As can be seen, compared with the initial design, the objective function of the optimized design gradually increases with the number of iterations. Under the same material ratio, the stiffness of the final optimized design is improved by 103.54%.
[0090] Next, the topology optimization apparatus for multiphase materials according to the embodiments of this application is described with reference to the accompanying drawings.
[0091] Figure 6 This is a block diagram of a topology optimization device for multiphase materials according to an embodiment of this application.
[0092] like Figure 6 As shown, the topology optimization device 10 for the multiphase material includes: an identification module 100, a calculation module 200, and a replacement module 300.
[0093] The identification module 100 is used to identify the actual material domain in which the target multiphase material is located; the calculation module 200 is used to perform meshing based on the actual material domain in which the target multiphase material is located and the actual material domain in which the interface material is located, to obtain multiple mesh units, and to calculate the stress-strain field of each mesh unit; the replacement module 300 is used to calculate the design sensitivity of each mesh unit based on the stress-strain field, and to replace the solid material of each mesh unit based on the design sensitivity, until the flexibility and volume change values of the corresponding solid region of each mesh unit before and after replacement reach a preset threshold, and then optimize the topology of the target multiphase material based on the design sensitivity that makes the flexibility and volume change values reach the preset threshold.
[0094] In this embodiment of the application, the identification module 100 is used to: obtain the level set function of the target multiphase material, wherein the equipotential surface of the level set function divides the material domain into material domains with different properties; identify the zero equipotential surface of the level set function, determine the actual interface characteristics of the zero equipotential surface according to the level set function, and match the actual material domain in which the interface material is located according to the actual interface characteristics.
[0095] In this embodiment, the calculation module 200 is used to: calculate the actual material ratio of the target multiphase material and the interface material; assign the material properties of the target multiphase material and the interface material to each grid cell through an elastic matrix according to the actual material ratio; and calculate the design sensitivity of each grid cell based on the elastic matrix and stress-strain field of each grid cell.
[0096] In this embodiment, the replacement module 300 is used to: update the level set function of the target multiphase material according to the design sensitivity; obtain the material distribution of the target multiphase material according to the updated level set function; and optimize the topology of the target multiphase material based on the material distribution.
[0097] It should be noted that the foregoing explanation of the topology optimization method for multiphase materials also applies to the topology optimization device for multiphase materials in this embodiment, and will not be repeated here.
[0098] The topology optimization device for multiphase materials proposed in this application identifies the material domains of multiphase materials and interface materials through a level set function. It then performs mesh generation based on the identified material domains, calculates the stress-strain field, and uses the elasticity matrix of each mesh element to calculate the design sensitivity of that element. Based on the design sensitivity of each mesh element, it replaces the solid material within the mesh element, obtains the new material distribution in the region through the updated level set function, and finally calculates the compliance and volume changes of the solid region before the current material iteration. It then determines whether the compliance and volume changes both meet preset thresholds. If so, the level set function under the current iteration is output as the optimal structure, achieving the goal of outputting the optimal topology of the multiphase material. This device is feasible and compatible in engineering applications, applicable to all mechanical structures subjected to loads. Therefore, it solves the technical problem in related technologies where the interface of multiphase materials is usually determined by a level set function and lacks interface characteristics, leading to limitations in the engineering application of topology optimization for multiphase materials.
[0099] Figure 7 A schematic diagram of the structure of an electronic device provided in an embodiment of this application. The electronic device may include:
[0100] The memory 701, the processor 702, and the computer program stored on the memory 701 and executable on the processor 702.
[0101] When the processor 702 executes the program, it implements the topology optimization method for multiphase materials provided in the above embodiments.
[0102] Furthermore, electronic devices also include:
[0103] Communication interface 703 is used for communication between memory 701 and processor 702.
[0104] The memory 701 is used to store computer programs that can run on the processor 702.
[0105] The memory 701 may include high-speed RAM (Random Access Memory) memory, and may also include non-volatile memory, such as at least one disk storage.
[0106] If the memory 701, processor 702, and communication interface 703 are implemented independently, then the communication interface 703, memory 701, and processor 702 can be interconnected via a bus to complete communication between them. The bus can be an ISA (Industry Standard Architecture) bus, a PCI (Peripheral Component Interconnect) bus, or an EISA (Extended Industry Standard Architecture) bus, etc. The bus can be divided into address bus, data bus, control bus, etc. For ease of representation, Figure 7 The bus is represented by a single thick line, but this does not mean that there is only one bus or one type of bus.
[0107] Optionally, in a specific implementation, if the memory 701, processor 702, and communication interface 703 are integrated on a single chip, then the memory 701, processor 702, and communication interface 703 can communicate with each other through an internal interface.
[0108] The processor 702 may be a CPU (Central Processing Unit), an ASIC (Application Specific Integrated Circuit), or one or more integrated circuits configured to implement the embodiments of this application.
[0109] This application also provides a computer-readable storage medium storing a computer program that, when executed by a processor, implements the above-described method for optimizing the topology of multiphase materials.
[0110] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.
[0111] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "N" means at least two, such as two, three, etc., unless otherwise explicitly specified.
[0112] Any process or method description in the flowchart or otherwise herein can be understood as representing a module, segment, or portion of code comprising one or more N executable instructions for implementing custom logic functions or processes, and the scope of the preferred embodiments of this application includes additional implementations in which functions may be performed not in the order shown or discussed, including substantially simultaneously or in reverse order according to the functions involved, as should be understood by those skilled in the art to which embodiments of this application pertain.
[0113] It should be understood that the various parts of this application can be implemented using hardware, software, firmware, or a combination thereof. In the above embodiments, the N steps or methods can be implemented using software or firmware stored in memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, it can be implemented using any one or a combination of the following techniques known in the art: discrete logic circuits having logic gates for implementing logical functions on data signals, application-specific integrated circuits (ASICs) having suitable combinational logic gates, programmable gate arrays (FPGAs), field-programmable gate arrays (FPGAs), etc.
[0114] Those skilled in the art will understand that all or part of the steps of the methods in the above embodiments can be implemented by a program instructing related hardware. The program can be stored in a computer-readable storage medium, and when executed, the program includes one or a combination of the steps of the method embodiments.
[0115] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application.
Claims
1. A method for optimizing the topology of a multiphase material, characterized in that, Includes the following steps: Identify the actual materials domain in which the target multiphase material exists; The mesh is divided based on the actual material domain of the target multiphase material and the actual material domain of the interface material to obtain multiple mesh elements, and the stress-strain field of each mesh element is calculated. The design sensitivity of each grid cell is calculated based on the stress-strain field, and the solid material of each grid cell is replaced based on the design sensitivity until the flexibility and volume change values of the corresponding solid region of each grid cell before and after replacement reach a preset threshold. Then, the topology of the target multiphase material is optimized based on the design sensitivity that makes the flexibility and volume change values reach the preset threshold. Identify the actual material domain of the interface material of the target multiphase material, including: Obtain the level set function of the target multiphase material, wherein the equipotential surface of the level set function divides the material domain into material domains with different properties; Identify the zero equipotential surface of the level set function, determine the actual interface characteristics of the zero equipotential surface based on the level set function, and match the actual material domain of the interface material based on the actual interface characteristics. The calculation of the design sensitivity of each mesh element based on the stress-strain field includes: Calculate the actual material ratio of the target multiphase material and the interface material; According to the actual material ratio, the material properties of the target multiphase material and the interface material are assigned to each grid cell through an elastic matrix; The design sensitivity of each grid cell is calculated based on the elasticity matrix of each grid cell and the stress-strain field; the formula for calculating the stress-strain field is: Where u is the displacement field. ε (u) represents the stress-strain field, v is the test function, and ε(v) is the virtual strain tensor of the test function v; Γt represents the boundary of the load acting on the target complex phase material; t is the external force vector acting on the design domain, dΓ is the boundary integral element; D is the design domain, and C is the elastic matrix.
2. The method according to claim 1, characterized in that, The optimization of the topology of the target multiphase material based on the design sensitivity corresponding to the achievement of a preset threshold for the flexibility and volume change values includes: Update the level set function of the target multiphase material based on the design sensitivity; The material distribution of the target complex material is obtained based on the updated level set function, and the topology of the target complex material is optimized based on the material distribution.
3. A device for optimizing the topology of multiphase materials, characterized in that, include: The identification module identifies the actual material domain in which the target multiphase material exists; The calculation module performs mesh generation based on the actual material domain of the target multiphase material and the actual material domain of the interface material, obtaining multiple mesh elements, and calculates the stress-strain field of each mesh element. The replacement module calculates the design sensitivity of each grid cell based on the stress-strain field, and replaces the solid material of each grid cell according to the design sensitivity until the compliance and volume change values of the corresponding solid region of each grid cell before and after replacement reach a preset threshold. Then, it optimizes the topology of the target multiphase material based on the design sensitivity that makes the compliance and volume change values reach the preset threshold. The identification module is used for: Obtain the level set function of the target multiphase material, wherein the equipotential surface of the level set function divides the material domain into material domains with different properties; Identify the zero equipotential surface of the level set function, determine the actual interface characteristics of the zero equipotential surface based on the level set function, and match the actual material domain of the interface material based on the actual interface characteristics. The calculation module is used for: Calculate the actual material ratio of the target multiphase material and the interface material; According to the actual material ratio, the material properties of the target multiphase material and the interface material are assigned to each grid cell through an elastic matrix; The design sensitivity of each grid cell is calculated based on the elasticity matrix of each grid cell and the stress-strain field; the formula for calculating the stress-strain field is: Where u is the displacement field. ε (u) represents the stress-strain field, v is the test function, and ε(v) is the virtual strain tensor of the test function v; Γt represents the boundary of the load acting on the target complex phase material; t represents the external force vector acting on the design domain, dΓ represents the boundary integral element; D represents the design domain, and C represents the elastic matrix.
4. An electronic device, characterized in that, include: A memory, a processor, and a computer program stored in the memory and executable on the processor, the processor executing the program to implement the method for optimizing the topology of a multiphase material as described in any one of claims 1-2.
5. A computer-readable storage medium having a computer program stored thereon, characterized in that, The program is executed by the processor to implement the topology optimization method for multiphase materials as described in any one of claims 1-2.
Citation Information
Patent Citations
Level set topological optimization method, system, equipment and medium
CN113094943A
Isogeometric stress topological optimization method and application thereof
CN114282372A