等离子体刻蚀装置及其运行工艺
By designing an adjustable shielding cover within the process chamber, the problems of uneven etching and equipment stability during plasma etching are solved, achieving efficient etching and cleaning effects, and making it suitable for various process applications.
CN115602512BActive Publication Date: 2026-07-17JIANGSU LEUVEN INSTR CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- JIANGSU LEUVEN INSTR CO LTD
- Filing Date
- 2021-07-12
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
During plasma etching, polymers and byproducts deposit on the wafer surface and below the coupling window, leading to etching inhomogeneity and equipment stability issues.
Method used
Two shielding covers are designed inside the process chamber and opened and closed by a cylinder. During the etching stage, the cover is open and does not block the wafer. During the cleaning stage, a funnel-shaped shielding cover is formed on the wafer surface, and plasma is gathered using a specific angle and shape for cleaning.
Benefits of technology
It improves etching uniformity and cleaning efficiency, reduces machine failure rate, is suitable for various process applications, and enhances equipment stability and process efficiency.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN115602512B_ABST
Abstract
本发明涉及一种等离子体刻蚀装置及其运行工艺，在工艺腔室的内部设计两个遮挡盖，两个遮挡盖合并后形成一个中部完全封闭、上部和底部敞口的漏斗形；遮挡盖连接至气缸，随着气缸同步运动，实现两个遮挡盖之间的开启与关闭。在刻蚀阶段，气缸收缩，带着遮挡盖呈分离状态，不会遮挡晶圆，不会影响晶圆的刻蚀工艺；在清洗阶段：气缸伸长，两个遮挡盖合成一个完整漏斗形，遮挡住晶圆免受刻蚀，不会影响晶圆表面的材料和图形，提高刻蚀均匀性。而且本发明减少了顶针和机械手的来回运动，提高了整体工艺效率，降低了机台故障率，提高设备稳定性，同时根据不同的工艺调节遮挡部的位置，可以灵活的应用于多种工艺场合。
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