A gallium nitride broadband active input matching network

Abstract

The application discloses a gallium nitride broadband active input matching network, which comprises a Darlington circuit composed of a transistor Q1 and a transistor Q2, and further comprises an LC matching network, phase shift networks N1, N2, N3, a feedback control network and an active phase shift network; the LC matching network is connected between the transistor Q1 and a radio frequency input port RFin; the output end of the transistor Q1 is connected to point A through the phase shift network N2 and the output end of the transistor Q2; the reverse transmission signal of the transistor Q2 enters a gallium nitride device through the active phase shift network, the feedback control network and the phase shift network N3 in sequence; and the reverse transmission signal of the gallium nitride device enters the input end of the transistor Q1 through the phase shift network N3, the feedback control network and the phase shift network N1 in sequence. The application can consider the input matching of the ultra wide band and the function of the gallium nitride driving stage circuit, and simultaneously improve the flatness of the small signal gain and the large signal gain of the gallium nitride device in the ultra wide band working frequency band.

Description

Technical Field

[0001] This invention relates to the field of broadband power amplifiers, and particularly to a gallium nitride broadband active input matching network. Background Technology

[0002] Wideband power amplifiers are generally defined by their relative bandwidth; a relative bandwidth exceeding 15% qualifies them as wideband amplifiers. Gallium nitride (GaN), a third-generation semiconductor device, offers numerous advantages in wideband power amplifiers, but also presents design challenges such as high impedance transformation ratios due to low transistor input impedance, low gain requiring driver circuitry, and other issues. Considering factors like cost and circuit design complexity, traditional matching methods such as multi-stage LC matching and feedback struggle to achieve ultra-wideband matching, and distributed matching structures significantly increase chip area.

[0003] The parasitic parameters of active devices are functions of frequency, such as junction capacitance and parasitic inductance of bonding wires. Furthermore, active devices all exhibit reverse propagation characteristics. Therefore, in broadband applications with a large frequency span, the different manifestations of parasitic parameters at various frequency points prevent the output signals of each stage of the circuit from being superimposed in phase at the output, thus deteriorating various indicators such as circuit efficiency, output power, and gain flatness. In summary, the essence of broadband matching lies in how to solve the problem of in-phase superposition of amplitude-frequency characteristics. Summary of the Invention

[0004] Darlington composite transistors are characterized by high current gain, high input impedance, and large bandwidth, and are commonly used in the design of broadband amplifiers. This invention proposes a broadband active input matching network for gallium nitride (GaN) power devices based on the Darlington circuit structure. This network can simultaneously achieve ultra-wideband input matching and the functionality of GaN driver circuits, while also improving the flatness of small-signal and large-signal gain of GaN devices in the ultra-wideband operating frequency band.

[0005] The technical solution of this invention is: A gallium nitride broadband active input matching network includes a Darlington circuit composed of transistors Q1 and Q2, and further includes an LC matching network, phase shifting networks N1, N2, and N3, a feedback control network, and an active phase shifting network, wherein: An LC matching network is connected between transistor Q1 and the RF input port RFin; the output of transistor Q1 is connected to point A via phase-shifting network N2 and the output of transistor Q2; point A is connected to the signal input of the gallium nitride device via phase-shifting network N3; the reverse transmission signal of transistor Q2 passes through the active phase-shifting network, the feedback control network, and the phase-shifting network N3 in sequence before entering the gallium nitride device; the reverse transmission signal of the gallium nitride device passes through the phase-shifting network N3, the feedback control network, and the phase-shifting network N1 in sequence before entering the input of transistor Q1.

[0006] Preferably, the output signal of transistor Q1 is positively superimposed at point A by the phase-shifting network N2 and the input signal of transistor Q2.

[0007] Preferably, the phase-shifting network N1 is superimposed with a feedback control network to achieve static adjustment of the amplitude-frequency characteristics; the active phase-shifting network is superimposed with a feedback control network to achieve dynamic adjustment of the amplitude-frequency characteristics.

[0008] Preferably, transistors Q1 and Q2 are one of the following active devices: BJT, HBT, FET, or HEMT.

[0009] Preferably, the feedback control network is composed of circuit elements with attenuation properties, used to control the strength of the feedback signal.

[0010] Preferably, the phase-shifting network N1, phase-shifting network N2, and phase-shifting network N3 are composed of one or more circuit elements with phase-shifting properties. The circuit elements with phase-shifting properties include capacitors, inductors, resistors, and transmission lines, and the combination forms include series and parallel connections.

[0011] Preferably, the active phase-shifting network includes: an active device, an attenuation network, and a combination of one or more circuit elements with phase-shifting properties; the circuit elements with phase-shifting properties include capacitors, inductors, resistors, and transmission lines, and the combination forms include series and parallel connections.

[0012] Preferably, the gallium nitride broadband active input matching network is composed of discrete components, or part of the network is composed of discrete components, part of the network is integrated circuits on the chip, or all of the network is integrated circuits on the chip.

[0013] Preferably, the gallium nitride broadband active input matching network adopts the first two modes, which are packaged into a module based on the same substrate, or implemented based on a PCB substrate.

[0014] The advantages of this invention are: Based on the Darlington circuit structure, this invention proposes a broadband active input matching network for gallium nitride power devices, which can take into account both ultra-wideband input matching and the function of gallium nitride driver circuits, while improving the flatness of small-signal gain and large-signal gain of gallium nitride devices in the ultra-wideband operating frequency band. Attached Figure Description

[0015] The present invention will be further described below with reference to the accompanying drawings and embodiments: Figure 1 This is a block diagram of the gallium nitride broadband active input matching network of the present invention; Figure 2 This is an implementation scheme for a gallium nitride broadband active input matching network. Detailed Implementation

[0016] Based on the Darlington circuit structure, this invention proposes a broadband active input matching network for gallium nitride power devices, which can take into account both ultra-wideband input matching and the function of gallium nitride driver circuits, while improving the flatness of small-signal gain and large-signal gain of gallium nitride devices in the ultra-wideband operating frequency band.

[0017] like Figure 1 As shown, the gallium nitride broadband active input matching network of the present invention includes a Darlington circuit composed of transistors Q1 and Q2, and also includes an LC matching network, phase shifting networks N1, N2, and N3, a feedback control network, and an active phase shifting network, wherein: The basic architecture of a Darlington circuit consists of transistors Q1 and Q2, which can be various active devices such as BJT / HBT, FET / HEMT; The LC matching network is connected between transistor Q1 and the RF input port RFin, and can adjust the circuit's operating frequency band, S11 and other performance characteristics. The output of transistor Q1 is connected to the output of transistor Q2 at point A via phase-shifting network N2; the output signals of transistor Q1 and Q2 are positively superimposed at point A, as shown below. Figure 1 As shown in loop 1; Point A is connected to the signal input terminal of the gallium nitride device via phase-shifting network N3; the reverse transmission signal of transistor Q2 passes sequentially through the active phase-shifting network, the feedback control network, and phase-shifting network N3 before entering the gallium nitride device. like Figure 1 As shown in loop 3, the active phase-shifting network superimposed with the feedback control network realizes the dynamic adjustment of the amplitude-frequency characteristics; The reverse transmission signal of the gallium nitride device passes sequentially through phase-shifting network N3, feedback control network, and phase-shifting network N1 before entering the input terminal of transistor Q1, as follows: Figure 1 As shown in loop 2, the phase-shifting network N1 superimposed with the feedback control network realizes the static adjustment of the amplitude-frequency characteristics.

[0018] exist Figure 1 In the block diagram of the gallium nitride broadband active input matching network shown, the feedback control network is generally composed of circuit elements with attenuation properties, which are used to control the strength of the feedback signal.

[0019] Phase-shifting networks N1, N2, and N3 are generally composed of one or more circuit elements with phase-shifting properties. Circuit elements with phase-shifting properties include, but are not limited to, capacitors, inductors, resistors, and transmission lines. The combination forms include, but are not limited to, series and parallel connections.

[0020] An active phase-shifting network comprises: an active device, an attenuation network, and one or more circuit elements with phase-shifting properties. The active device can be various types of active devices such as BJT / HBT and FET / HEMT. Circuit elements with phase-shifting properties include, but are not limited to, capacitors, inductors, resistors, and transmission lines, and their combinations include, but are not limited to, series and parallel connections.

[0021] The aforementioned gallium nitride broadband active input matching network can be constructed from discrete components. Some parts of the network can be constructed using discrete components, while others can be integrated circuits on-chip, or all can be integrated circuits on-chip. Those using the first two methods can be packaged into modules on the same substrate or implemented on a PCB substrate.

[0022] Figure 2 This is an implementation scheme of a gallium nitride broadband active input matching network, wherein the phase shifts of phase shift networks N1, N2, and N3 are θ1, θ2, and θ3, respectively; the active phase shift network consists of a second feedback control network, a phase shift network N4, and a transistor Q3.

[0023] The above embodiments are only for illustrating the technical concept and features of the present invention, and are intended to enable those skilled in the art to understand the content of the present invention and implement it accordingly. They should not be construed as limiting the scope of protection of the present invention. All modifications made according to the spirit and essence of the main technical solution of the present invention should be covered within the scope of protection of the present invention.

Claims

1. A gallium nitride broadband active input matching network, comprising a Darlington circuit composed of transistors Q1 and Q2, characterized in that, It also includes LC matching network, phase shifting networks N1, N2, N3, feedback control network, and active phase shifting network, among which: An LC matching network is connected between transistor Q1 and the RF input port RFin; the output of transistor Q1 is connected to point A via phase-shifting network N2 and the output of transistor Q2; point A is connected to the signal input of the gallium nitride device via phase-shifting network N3; the reverse transmission signal of transistor Q2 passes through the active phase-shifting network, the feedback control network, and the phase-shifting network N3 in sequence before entering the gallium nitride device; the reverse transmission signal of the gallium nitride device passes through the phase-shifting network N3, the feedback control network, and the phase-shifting network N1 in sequence before entering the input of transistor Q1. The output signal of transistor Q1 is positively superimposed at point A by the phase-shifting network N2 and the input signal of transistor Q2; The phase-shifting network N1, superimposed with a feedback control network, achieves static adjustment of the amplitude-frequency characteristics; the active phase-shifting network, superimposed with a feedback control network, achieves dynamic adjustment of the amplitude-frequency characteristics.

2. The gallium nitride broadband active input matching network according to claim 1, characterized in that, Transistor Q1 and transistor Q2 are active devices, namely BJT, HBT, FET or HEMT.

3. The gallium nitride broadband active input matching network according to claim 1, characterized in that, The feedback control network is composed of circuit elements with attenuation properties, used to control the strength of the feedback signal.

4. The gallium nitride broadband active input matching network according to claim 1, characterized in that, The phase-shifting networks N1, N2, and N3 are composed of one or more circuit elements with phase-shifting properties. The circuit elements with phase-shifting properties include capacitors, inductors, resistors, and transmission lines, and the combination forms include series and parallel connections.

5. The gallium nitride broadband active input matching network according to claim 1, characterized in that, The active phase-shifting network includes: an active device, an attenuation network, and a combination of one or more circuit elements with phase-shifting properties; the circuit elements with phase-shifting properties include capacitors, inductors, resistors, and transmission lines, and the combination forms include series and parallel connections.

6. The gallium nitride broadband active input matching network according to claim 1, characterized in that, The gallium nitride broadband active input matching network is composed of discrete components, or some of the network is composed of discrete components and some of the network is integrated on the chip, or all of the network is integrated on the chip.

7. The gallium nitride broadband active input matching network according to claim 6, characterized in that, The gallium nitride broadband active input matching network adopts the first two modes, which are packaged into a module based on the same substrate, or implemented based on a PCB substrate.

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